JP3155514B2 - Magnetoresistive head - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive head and, more particularly, to a magnetoresistive head for performing processing such as reproducing magnetic information by changing the resistance value of a magnetoresistive element.

[0002]

2. Description of the Related Art In recent years, in a magnetic head for performing magnetic information processing such as recording and reproduction of information on a hard disk which is a magnetic recording medium of a magnetic recording device such as a computer, the magnetic head is in contact with the magnetic recording medium in a stationary state. In recent years, a floating magnetic head which levitates from a magnetic recording medium in an operating state and performs predetermined magnetic recording or reproduction has been widely used. In recent years, such a floating magnetic head has been used as a magnetoresistive effect element (MR element). Magnetoresistive head (MR)
Head) is often used.

FIGS. 13 and 14 show such a conventional magnetoresistive head. The magnetoresistive head 1 has a width substantially equal to a track width of a magnetic recording medium 2 (not shown). The magneto-resistance effect element 3 is provided so as to be perpendicular to the magnetic recording medium and positioned in the track width direction of the magnetic recording medium 2. The magnetoresistive effect element 3 has a magnetoresistive effect film 4. One surface of the magnetoresistive effect film 4 is softly connected via an intermediate layer 5 made of a nonmagnetic material such as Nb or Ta. A magnetic film (SAL film) 6 is formed. An antiferromagnetic film 7 is formed on each side of the magnetoresistive element 3 opposite to the side where the intermediate layer 5 is formed. A constant voltage is applied to the magneto-resistance effect film 4 of the magneto-resistance effect element 3 to apply a bias magnetic field to the magneto-resistance effect film 4 and the soft magnetic film 6, and a change in the resistance value of the magneto-resistance effect film 4 is taken out. Lead wires 8 are connected to each other.

Further, on both sides of the magnetoresistive element 3, the width of the magnetoresistive element 3 is larger than that of the magnetoresistive element 3 in order to increase the spatial resolution of the magnetic field detected by the magnetoresistive element 3. A pair of shields 9, 9 are arranged so as to have a predetermined interval.

In such a conventional magnetoresistive head, the magnetoresistive head 1 slides on the magnetic recording surface of a magnetic recording medium 2 such as a hard disk, for example, through the lead wires 8. 13 by applying a predetermined voltage to the magnetoresistive film 4 and applying a bias magnetic field passing through the magnetoresistive film 4 and the soft magnetic film 6 of the magnetoresistive element 3 as shown by the arrow in FIG. Magnetic recording medium 2
The magnetic field generated from each track changes the resistance value of the magnetoresistive element 3, and the magnetic field strength is detected in accordance with the change in the resistance value to reproduce predetermined magnetic information. .

In the magneto-resistive head 1, the anti-ferromagnetic film 7 formed on the magneto-resistive film 4 allows the two ends of the magneto-resistive effect film 4 to extend vertically in the direction parallel to the magnetic recording medium 2. By generating a bias, it is possible to achieve a single domain in the entire magnetoresistive effect film 4, thereby improving the reproducing characteristics and reducing Barkhausen noise.

[0007]

However, as the recording density increases further, the track width decreases, and the reproduction output decreases, it is necessary to further reduce Barkhausen noise. In the conventional magneto-resistance effect type head, the magneto-resistance effect film 4 is formed into a single domain by the anti-ferromagnetic films 7 formed on both ends of one surface of the magneto-resistance effect film 4. Depending on the antiferromagnetic film 7 formed on the film 4, the soft magnetic film 6 cannot be made into a single domain. Therefore, the bias magnetic field is changed due to the domain structure of the soft magnetic film 6 or a domain change during operation. Is affected and the bias magnetic field is disturbed,
There is a problem that Barkhausen noise is included in the output and the reproduction characteristics are deteriorated.

In addition, since the temperature of the vicinity of the magnetoresistive film 4 rises due to the operation of the head, if the temperature of the antiferromagnetic film 7 exceeds its Neel temperature due to this rise in temperature,
Since the antiferromagnetism of the antiferromagnetic film 7 disappears, a single domain cannot be achieved by the antiferromagnetic film 7, and there is a problem that Barkhausen noise cannot be reduced. . Further, in order to stably operate the exchange bias in the magnetoresistive head for a long period of time, it is necessary to use a material having high corrosion resistance. For the conventional antiferromagnetic film 7, an Fe--Mn alloy is used. Therefore, there is a problem that there is no corrosion resistance and reliability is applied.

The present invention has been made in view of the above points, and can appropriately maintain the antiferromagnetism of an antiferromagnetic film, and achieve a single domain of a magnetoresistive film and a soft magnetic film. It is an object of the present invention to provide a magnetoresistive head capable of forming an appropriate bias magnetic field, improving magnetic properties, and having excellent corrosion resistance.

[0010]

According to a first aspect of the present invention, there is provided a magnetoresistive head according to the present invention.
At least a pair of shields are arranged at predetermined intervals on both sides of a magnetoresistive element including a magnetic film to which an exchange bias is applied in direct contact with an antiferromagnetic film. The antiferromagnetic film is made of Cr
-Rh alloy , Cr-Os alloy, Cr-Ir alloy, γ-
(Mn-Pd-Ni) alloy , γ- (Mn-Ir-Cu)
Alloy, γ-Mn-Ir alloy, Mn ₃ Pt-Mn ₃ Rh,
It is characterized by comprising at least one of MnPd-MnPt.

According to the first aspect of the present invention, since the antiferromagnetic film that is in contact with the magnetic film is made of the above-described material, the heat resistance can be significantly improved, and the temperature can be reduced by the operation of the head. Even if it rises, the antiferromagnetism of the antiferromagnetic film does not disappear, and an appropriate antiferromagnetism can always be obtained, whereby the magnetic film can be made into a single domain. As a result, the Barkhausen noise of the magnetoresistive element and the magnetoresistive head can be remarkably reduced, and by forming the antiferromagnetic film from these materials, the antiferromagnetic film, Corrosion resistance of the magnetoresistive element and the magnetoresistive head can be significantly improved.

[0012] Further, the invention described in claim 2 is at least as follows.
Exchange bias was applied in direct contact with the antiferromagnetic film
A pair of seals is provided on both sides of the magnetoresistive element containing the magnetic film.
The magnetic resistance effect of
In the fruit head, the antiferromagnetic film is made of a Cr-Al alloy.
And contains about 7.5 at% or more of Al with respect to Cr.
It is characterized in that it is made to be.

According to a third aspect of the present invention, at least an anti-strength
Magnetic film with exchange bias applied in direct contact with the magnetic film
A pair of shields on both sides of the magnetoresistive element containing
To a magnetoresistive effect type
The antiferromagnetic film is made of a Cr-Al-Fe alloy
In each case, 30 to 33 atm of Al is added to Cr.
% And Fe at 5 at% or more.
It is a sign.

[0014] The invention according to claim 4 has at least a strong strength.
Magnetic film with exchange bias applied in direct contact with the magnetic film
A pair of shields on both sides of the magnetoresistive element containing
To a magnetoresistive effect type
Wherein the antiferromagnetic film is made of a Cr-Mn-V alloy.
There, the composition of the formula _{(Cr 1-X -Mn X)} 0.98 -V
_0.02 (however, X ≧ 5at%)
Things.

According to a fifth aspect of the present invention, at least an anti-strength
Magnetic film with exchange bias applied in direct contact with the magnetic film
A pair of shields on both sides of the magnetoresistive element containing
To a magnetoresistive effect type
Wherein the antiferromagnetic film is a Cr-Mn alloy.
So that Mn is contained at 2 at% or more with respect to Cr.
It is characterized by having done.

[0016] The invention according to claim 6 has at least a strong strength.
Magnetic film with exchange bias applied in direct contact with the magnetic film
A pair of shields on both sides of the magnetoresistive element containing
To a magnetoresistive effect type
Wherein the antiferromagnetic film is a Cr-Re alloy.
And about 2 to 16 at% of Re with respect to Cr.
This is a feature of the present invention.

According to a seventh aspect of the present invention, at least an anti-strength
Magnetic film with exchange bias applied in direct contact with the magnetic film
A pair of shields on both sides of the magnetoresistive element containing
To a magnetoresistive effect type
Wherein the antiferromagnetic film is a Cr-Rh alloy.
About 1 to 10 at% relative to Cr.
This is a feature of the present invention.

[0018] The invention according to claim 8 has at least a high strength.
Magnetic film with exchange bias applied in direct contact with the magnetic film
A pair of shields on both sides of the magnetoresistive element containing
To a magnetoresistive effect type
Wherein the antiferromagnetic film is a Cr-Ru alloy.
About 1 to 10 at% of Ru with respect to Cr.
This is a feature of the present invention.

According to the ninth aspect of the present invention, there is provided at least
Magnetic film with exchange bias applied in direct contact with the magnetic film
A pair of shields on both sides of the magnetoresistive element containing
To a magnetoresistive effect type
Wherein the antiferromagnetic film is a Cr-Os alloy.
About 1 to 10 at% of Cr with respect to Cr.
This is a feature of the present invention.

[0020] The invention described in claim 10 is at least a countermeasure.
Exchange bias applied magnetism in direct contact with ferromagnetic film
A pair of shields on both sides of the magnetoresistive element containing the film
Type with a predetermined spacing
In the head, the antiferromagnetic film is made of a Cr-Ir alloy.
And make Cr contain 0.25 at% or more with respect to Cr.
It is characterized by doing so.

[0021] The invention described in claim 11 is at least a countermeasure.
Exchange bias applied magnetism in direct contact with ferromagnetic film
A pair of shields on both sides of the magnetoresistive element containing the film
Type with a predetermined spacing
In the head, the antiferromagnetic film has a γ- (Mn-Pd-
Ni) alloy, 5 at% of Ni and Pd with respect to Mn
It is characterized by containing
You.

The twelfth aspect of the present invention provides at least
Exchange bias applied magnetism in direct contact with ferromagnetic film
A pair of shields on both sides of the magnetoresistive element containing the film
Type with a predetermined spacing
In the head, the antiferromagnetic film has a γ- (Mn-Ir-
Cu) alloy, and about 5 to 2 Ir and Cu with respect to Mn.
It is characterized by containing 5 at%.
is there.

[0023] The invention of claim 13 at least provides
Exchange bias applied magnetism in direct contact with ferromagnetic film
A pair of shields on both sides of the magnetoresistive element containing the film
Type with a predetermined spacing
In the head, the antiferromagnetic film is a γ-Mn-Ir alloy
And containing about 5 to 20 at% of Ir with respect to Mn.
It is characterized by having made it so that.

[0024] The invention described in claim 14 is at least a countermeasure.
Exchange bias applied magnetism in direct contact with ferromagnetic film
A pair of shields on both sides of the magnetoresistive element containing the film
Type with a predetermined spacing
In the head, the antiferromagnetic film is formed of Mn ₃ Pt—Mn ₃
Rh, the composition of which is represented by the following formula (Mn ₃ Pt _{1 -X} Rh _X ) (where X = 0.6 to 1.X).
0 at%) .

The invention according to claim 15 has at least a countermeasure.
Exchange bias applied magnetism in direct contact with ferromagnetic film
A pair of shields on both sides of the magnetoresistive element containing the film
Type with a predetermined spacing
In the head, the antiferromagnetic film is formed of MnPd-MnPt.
Whose composition is represented by the following formula (MnPd _1-x Pt _x ) (where 0 <X ≦ 1.0 at
%) .

According to the second to fifteenth aspects of the invention,
If these materials are used, they will
By configuring the ferromagnetic film, the Neel temperature of the antiferromagnetic film
Degree can be 500K or more, and it is antiferromagnetic
By forming the film from these materials, corrosion resistance is improved.
It can be significantly increased.

According to a sixteenth aspect of the present invention, there is provided
17. The anti-ferromagnetic film according to claim 15,
Temperature is set to 500 ° K or more.
is there.

According to the sixteenth aspect of the present invention, the magnetoresistance
Neel temperature of antiferromagnetic film in contact with magnetic film in effect device
The temperature is set to 500K or more,
Even if the temperature rises, the antiferromagnetism of the antiferromagnetic film disappears.
Always obtain proper antiferromagnetism without losing
This allows the magnetic film to have a single domain.
As a result, the magnetoresistive effect element and the magnetic resistance
Barkhausen noise of anti-effect head is significantly reduced
That can be done.

[0029] The invention described in claim 17 is based on claim 1
17. The magnetic film according to claim 16, wherein the magnetic film has a magnetoresistance.
An effect film, wherein the antiferromagnetic film is provided at both ends of the magnetic film.
Formed in pairs via an intermediate layer made of non-magnetic material
It is characterized by the following.

According to the seventeenth aspect, the antiferromagnetic
Non-magnetic material is applied to both ends of the magnetic film, which is a magnetoresistive film.
By forming a pair with an intermediate layer made of
Antiferromagnetism can be obtained, and the magnetoresistive effect film
Magnetoresistive film due to longitudinal bias generated in a certain magnetic film
Into a single domain, and as a result
Lukehausen noise can be significantly reduced
It is.

[0031]

[0032]

[0033]

[0034]

[0035]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The embodiments of the present invention will be described below with reference to FIGS. 1 to 12 and the same parts as those in FIGS.

FIG. 1 shows an embodiment of a magnetoresistive head according to the present invention. The magnetoresistive head 1 is perpendicular to a magnetic recording medium (not shown) and
The magneto-resistance effect element 3 is disposed so as to be positioned in the track width direction of the magnetic recording medium. The magneto-resistance effect element 3 includes a magneto-resistance effect film 4 and one surface of the magneto-resistance effect film 4. Has a soft magnetic film 6 disposed therein. In this embodiment, antiferromagnetic films 7 are provided between the magnetoresistive film 4 and the soft magnetic film 6 and at both ends of the magnetoresistive film 4. An intermediate layer 5 made of a non-magnetic material is formed in a portion between the antiferromagnetic films 7 between the magnetoresistive film 4 and the soft magnetic film 6.

Further, lead wires 8 for applying a constant voltage to the magnetoresistive effect element 3 are connected to both ends of the other side of the magnetoresistive effect film 4. On both sides of the element 3, a pair of shields 9, 9 are arranged so as to have a predetermined interval.

In this embodiment, as the antiferromagnetic film 7, for example, a Cr-based alloy, a γ-Mn-based alloy,
It is formed of a material having a relatively high Neel temperature ( _TN ) such as a Mn-based intermetallic compound. Then, in order to prevent the antiferromagnetism of the antiferromagnetic film 7 from disappearing due to a temperature rise during the operation of the magnetic head, the Neel temperature is, for example, about 500 ° K (227 ° C.) or more. It is necessary.

As the Cr-based alloy, first, as a binary alloy, there is a Cr _1-x -Al _x alloy, which contains about 7.5 at% of Al with respect to Cr as shown in FIG. By the above addition, the Neel temperature can be set to 500 ° K or higher.

As the ternary alloy, Cr-Al-
There are Fe alloys and Cr-Mn-V alloys, and Cr-Al-
In the case of the Fe alloy, the content of Al is 30 to
By adding 33 at% and 5 at% of Fe, the Neel temperature can be increased to 500 ° K or more, and the Cr—Mn
In -V alloy, for _{example, (Cr 1-X -Mn X} ) 0.98 -V
_In the case of _0.02 , as shown in FIG. 3, if Mn is about 5 at% or more, a Neel temperature of 500 ° K or more can be secured.

Other alloys include Cr and M
n, Re, Rh, Ru, Os, and alloys with Ir.

As shown in FIGS. 4 to 9, these alloys have a Mn content of about 2 at% or more with respect to Cr in the case of a Cr-Mn alloy, and a Re of about 2 at% in the case of a Cr-Re alloy. 2 to 16 at%, for a Cr-Rh alloy, Rh is about 1 to 10 at%, for a Cr-Ru alloy, Ru is about 1 to 10 at%, and for a Cr-Os alloy, Os is about 1 to 1 at%. In the case of a 10 at%, Cr-Ir alloy, the Neel temperature can be maintained at 500 ° K or more by adding Ir in an amount of about 0.25 at% or more.

In the case of a γ-Mn base alloy, γ- (M
n-Pd-Ni) alloy, Mn-Pt alloy, Mn-Pd alloy or γ- (Mn-Ir-Cu) alloy, γ-Mn
-Ir alloy or the like is used.

In the case of the γ- (Mn-Pd-Ni) alloy, as shown in FIG.
By adding Pd in an amount of about 5 at% or less, the Neel temperature can be increased to 500 ° K or more. Also, although not shown, in the Mn-Pt alloy and the Mn-Pd alloy,
By adding about 50 at% of Mn to Pt or Pd, respectively, the Neel temperature becomes 500 ° K or more. Further, in the case of a γ- (Mn-Ir-Cu) alloy,
Ir and Cu may be added to Mn in an amount of about 5 to 25 at%. In the case of a γ-Mn-Ir alloy, Ir may be added in an amount of about 5 to 20 at% with respect to Mn, as shown in FIG.

Further, in the Mn group intermetallic compound,
_{Mn 3 Pt-Mn 3 Rh;} (Mn 3 Pt 1-X Rh X) and _{MnPd-MnPt; (MnPd 1-} X Pt X) may, in the case of the Mn ₃ Pt-Mn ₃ Rh, against Mn Pt and Rh may be added at x = 0.6 to 1.0. In the case of MnPd-MnPt, Pd and Rh are added to Mn.
Pt may be added at x = 0 to 1.0.

Next, the operation of the present embodiment will be described.

In this embodiment, the magneto-resistance effect type head 1 is slid on the magnetic recording surface of a predetermined magnetic recording medium while the magneto-resistance effect film 4 and the soft magnetic film 6 of the magneto-resistance effect element 3 are slid. By applying a bias magnetic field that passes through the magnetic recording medium, the magnetic field generated from each track of the magnetic recording medium changes the resistance value of the magnetoresistive element 3, and the strength of the magnetic field is detected according to the change in the resistance value. , And reproduces predetermined magnetic information.

In this case, in this embodiment, about 500 parts are provided at both ends between the magnetoresistive film 4 and the soft magnetic film 6.
Since the antiferromagnetic film 7 having a Neel temperature equal to or higher than ゜ K is formed, even if the temperature near the magnetoresistive film 4 rises due to the operation of the head, the antiferromagnetism of the antiferromagnetic film 7 increases. The anti-ferromagnetic film 7 does not disappear, and an appropriate anti-ferromagnetic property can always be obtained by the anti-ferromagnetic film 7, so that not only the magneto-resistance effect film 4 but also the soft magnetic film 6 has a longitudinal bias. The magnetoresistive film 4 and the soft magnetic film 6 can be properly brought into a single domain state.

Therefore, in the present embodiment, the antiferromagnetic film 7 having a high Neel temperature is provided between the magnetoresistive film 4 and the soft magnetic film 6, so that the antiferromagnetic film 7 has a high strength even when the temperature rises. Since the magnetism can be maintained and the magnetoresistive effect film 4 and the soft magnetic film 6 can be made into a single domain,
Generation of Barkhausen noise or the like can be appropriately prevented.

FIG. 12 shows another embodiment of the present invention. In this embodiment, the entire surface between the magneto-resistance effect film 4 and the soft magnetic film 6 of the magneto-resistance effect element 3 is provided. An antiferromagnetic film 7 having a high Neel temperature of 500 ° K or more is interposed, and no intermediate layer made of a nonmagnetic material is formed.

Since the other parts are the same as those of the embodiment shown in FIG. 1, the same parts are denoted by the same reference numerals and description thereof will be omitted.

In this embodiment, as in the previous embodiment, the antiferromagnetic film 7 having a high Neel temperature is formed between the magnetoresistive film 4 and the soft magnetic film 6, so that an appropriate ferromagnetic film 7 is always formed. Antiferromagnetism can be obtained, and the magnetoresistive film 4
In addition, the longitudinal bias in both the soft magnetic film 6 can make the magnetoresistive film 4 and the soft magnetic film 6 into a single domain.

Accordingly, also in the present embodiment, it is possible to appropriately prevent the occurrence of Barkhausen noise and the like.

The present invention is not limited to the above-described embodiments, but can be variously modified as needed.

[0055]

As described above, in the magnetoresistive head according to the first aspect of the present invention, the antiferromagnetic film to be in contact with the magnetic film in the magnetoresistive element is made of the predetermined material. As a result, the heat resistance can be remarkably increased, and even when the temperature rises due to the operation of the head, the antiferromagnetism of the antiferromagnetic film does not disappear, and an appropriate antiferromagnetism is always obtained. As a result, the magnetic film can be made into a single domain, and as a result, the Barkhausen noise of the magnetoresistive element and the magnetoresistive head can be significantly reduced. By forming the film from these materials, the corrosion resistance of the antiferromagnetic film, and hence the magnetoresistive element and the magnetoresistive head can be significantly improved.

According to a second aspect of the present invention, the Neel temperature of the antiferromagnetic film in contact with the magnetic film in the magnetoresistive element is set to 5
Since the temperature is set to 00 ° K or more, even when the temperature rises due to the operation of the head, the antiferromagnetism of the antiferromagnetic film does not disappear and an appropriate antiferromagnet can always be obtained. Accordingly, the magnetic film can be made into a single domain, and as a result, the Barkhausen noise of the magnetoresistive element and the magnetoresistive head can be significantly reduced.

According to a third aspect of the present invention, by forming an antiferromagnetic film from these materials, the Neel temperature of the antiferromagnetic film can be set to 500 ° K or more.
By forming an antiferromagnetic film with these materials,
Corrosion resistance can be significantly increased.

According to a fourth aspect of the present invention, the antiferromagnetic film comprises:
By forming a pair at both ends of the magnetic film, which is a magnetoresistive effect film, with an intermediate layer made of a non-magnetic material, it is possible to always obtain appropriate antiferromagnetism. The vertical bias makes it possible to form the magnetoresistive film into a single domain, and as a result, Barkhausen noise can be significantly reduced.

The invention according to claim 5 to claim 20 is as follows:
By forming the antiferromagnetic film with these materials to have these compositions, the Neel temperature of the antiferromagnetic film can be reduced by 5%.
The temperature can be set to not less than 00 ° K, and by forming the antiferromagnetic film from these materials, there are effects such as a remarkable increase in corrosion resistance.

[Brief description of the drawings]

FIG. 1 is a plan view showing an embodiment of a magnetoresistive head according to the present invention.

FIG. 2 shows Cr-A constituting an antiferromagnetic film according to the present invention.
Diagram showing the relationship of the Neel temperature to the amount of Al added to the 1 alloy

FIG. 3 shows Cr-M constituting an antiferromagnetic film according to the present invention.
Diagram showing relationship between Neel temperature and amount of Mn added to nV alloy

FIG. 4 shows Cr-M constituting an antiferromagnetic film according to the present invention.
Diagram showing the relationship between the amount of Mn added to the n alloy and the Neel temperature

FIG. 5 shows a Cr-R constituting an antiferromagnetic film according to the present invention.
Diagram showing the relationship between the Ne content and the amount of Re added to the e-alloy

FIG. 6 shows a Cr-R constituting an antiferromagnetic film according to the present invention.
Diagram showing the relationship between the Ne content and the amount of Rh added to the h alloy

FIG. 7 shows a Cr-R constituting an antiferromagnetic film according to the present invention.
Diagram showing relationship between Ne content and amount of Ru added to u alloy

FIG. 8 shows Cr—O constituting an antiferromagnetic film according to the present invention.
Diagram showing the relationship between the amount of Os added to the s alloy and the Neel temperature

FIG. 9 shows Cr-I constituting an antiferromagnetic film according to the present invention.
Diagram showing the relationship of the Neel temperature to the amount of Ir added to the r alloy

FIG. 10 shows γ-constituting an antiferromagnetic film according to the present invention.
Diagram showing relationship between Neel temperature and addition amount of Ni and Pd in (Mn-Ni-Pd) alloy

FIG. 11 shows Mn- constituting the antiferromagnetic film according to the present invention.
Diagram showing the relationship of the Neel temperature to the amount of Ir added to an Ir alloy

FIG. 12 is a plan view showing another embodiment of the magnetoresistive head according to the present invention.

FIG. 13 is a side view showing a conventional magnetoresistive head.

FIG. 14 is a plan view of FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Magnetoresistive head 3 Magnetoresistive element 4 Magnetoresistive film 5 Intermediate layer 6 Soft magnetic film 7 Antiferromagnetic film 8 Lead wire 9 Shield

Claims (17)

(57) [Claims] 1. A magnetic device comprising a pair of shields arranged at predetermined intervals on both sides of a magnetoresistive element including a magnetic film to which at least an exchange bias is applied in direct contact with an antiferromagnetic film. In the resistance effect type head, the antiferromagnetic film may be made of a Cr-Rh alloy , a Cr-Os alloy, a Cr-I
r alloy, γ- (Mn-Pd-Ni) alloy , γ- (Mn-
Ir—Cu) alloy, γ-Mn—Ir alloy, Mn ₃ Pt—
Mn ₃ Rh, magnetoresistive head, characterized by being configured from any one or more MnPd-MnPt. 2. The method according to claim 1, wherein at least the antiferromagnetic film is in direct contact with the antiferromagnetic film.
Magnetoresistive element including magnetic film to which exchange bias is applied
A pair of shields on both sides of the
In the magnetoresistive head having the above arrangement,
The magnetic film is a Cr-Al alloy, and Al is
It is characterized by containing 7.5 at% or more.
Magnetoresistive head. 3. The method according to claim 1, wherein at least the antiferromagnetic film is in direct contact with the antiferromagnetic film.
Magnetoresistive element including magnetic film to which exchange bias is applied
A pair of shields on both sides of the
In the magnetoresistive head having the above arrangement,
The magnetic film is a Cr-Al-Fe alloy,
On the other hand, it contains 30 to 33 at% of Al and 5 at% or more of Fe.
A magnetoresistive head comprising: 4. The method according to claim 1, wherein at least the antiferromagnetic film is in direct contact with the antiferromagnetic film.
Magnetoresistive element including magnetic film to which exchange bias is applied
A pair of shields on both sides of the
In the magnetoresistive head having the above arrangement,
The magnetic film is a Cr-Mn-V alloy, the composition of which is represented by the following formula:
(Cr _1-X -Mn _X ) _0.98 -V _0.02 (where X ≧ 5a
t%) . 5. The method according to claim 1, wherein at least the antiferromagnetic film is in direct contact with the antiferromagnetic film.
Magnetoresistive element including magnetic film to which exchange bias is applied
A pair of shields on both sides of the
In the magnetoresistive head having the above arrangement,
The magnetic film is a Cr-Mn alloy, and Mn is 2% with respect to Cr.
A magneto-resistive head comprising at least at% . 6. An anti-ferromagnetic film which is in direct contact with at least
Magnetoresistive element including magnetic film to which exchange bias is applied
A pair of shields on both sides of the
In the magnetoresistive head having the above arrangement,
The magnetic film is a Cr-Re alloy, and Re is approximately
A magnetoresistive head comprising 2 to 16 at% . 7. The method according to claim 1, wherein at least the antiferromagnetic film is in direct contact with the
Magnetoresistive element including magnetic film to which exchange bias is applied
A pair of shields on both sides of the
In the magnetoresistive head having the above arrangement,
The magnetic film is a Cr-Rh alloy, and Rh is approximately
A magneto-resistive head comprising 1 to 10 at% . 8. An anti-ferromagnetic film which contacts at least directly.
Magnetoresistive element including magnetic film to which exchange bias is applied
A pair of shields on both sides of the
In the magnetoresistive head having the above arrangement,
The magnetic film is a Cr-Ru alloy, and Ru is reduced to about Cr.
A magneto-resistive head comprising 1 to 10 at% . 9. At least a direct contact with the antiferromagnetic film
Magnetoresistive element including magnetic film to which exchange bias is applied
A pair of shields on both sides of the
In the magnetoresistive head having the above arrangement,
The magnetic film is a Cr-Os alloy, and Os is
A magneto-resistive head comprising 1 to 10 at% . 10. At least in direct contact with an antiferromagnetic film
Magnetoresistance effect including magnetic film with exchange bias applied
On both sides of the element, a pair of shields with a predetermined spacing
In the magneto-resistance effect type head arranged in
The ferromagnetic film is a Cr-Ir alloy, and Ir is
It is characterized by containing 0.25 at% or more.
Magnetoresistive head. 11. Direct contact with at least an antiferromagnetic film
Magnetoresistance effect including magnetic film with exchange bias applied
On both sides of the element, a pair of shields with a predetermined spacing
In the magneto-resistance effect type head arranged in
The ferromagnetic film is a γ- (Mn-Pd-Ni) alloy;
And Ni, so as to free chromatic less 5at% of Pd relative to
A magnetoresistive head. 12. At least in direct contact with the antiferromagnetic film
Magnetoresistance effect including magnetic film with exchange bias applied
On both sides of the element, a pair of shields with a predetermined spacing
In the magneto-resistance effect type head arranged in
The ferromagnetic film is a γ- (Mn-Ir-Cu) alloy;
About 5 to 25 at% of Ir and Cu
A magneto-resistance effect type head characterized in that: 13. At least in direct contact with the antiferromagnetic film
Magnetoresistance effect including magnetic film with exchange bias applied
On both sides of the element, a pair of shields with a predetermined spacing
In the magneto-resistance effect type head arranged in
The ferromagnetic film is a γ-Mn-Ir alloy.
r is contained in an amount of about 5 to 20 at%.
Magnetoresistive head to. 14. At least in direct contact with the antiferromagnetic film
Magnetoresistance effect including magnetic film with exchange bias applied
On both sides of the element, a pair of shields with a predetermined spacing
In the magneto-resistance effect type head arranged in
The ferromagnetic film is Mn ₃ Pt—Mn ₃ Rh, and its composition is
The following formula (Mn ₃ Pt _1-X Rh _X ) (where X = 0.6 to 1.
Magnetoresistive head and satisfies the 0 atomic%). 15. At least in direct contact with the antiferromagnetic film
Magnetoresistance effect including magnetic film with exchange bias applied
On both sides of the element, a pair of shields with a predetermined spacing
In the magneto-resistance effect type head arranged in
The ferromagnetic film is MnPd-MnPt, and its composition is represented by the following formula (MnPd _1-x Pt _x ) (where 0 <X ≦ 1.0 at.
Magnetoresistive head and satisfies the%). 16. The antiferromagnetic film having a Neel temperature of 500
2. The method according to claim 1, wherein the temperature is not less than ゜ K.
6. The magnetoresistive head according to any one of 5 . 17. The magnetic film is a magnetoresistive film,
The antiferromagnetic film is formed of a nonmagnetic material on both ends of the magnetic film.
Characterized by being formed as a pair with an intermediate layer
The magnetoresistive head according to any one of claims 1 to 16 .