JPH065771B2 - Manufacturing method of photovoltaic device - Google Patents
Manufacturing method of photovoltaic deviceInfo
- Publication number
- JPH065771B2 JPH065771B2 JP62043712A JP4371287A JPH065771B2 JP H065771 B2 JPH065771 B2 JP H065771B2 JP 62043712 A JP62043712 A JP 62043712A JP 4371287 A JP4371287 A JP 4371287A JP H065771 B2 JPH065771 B2 JP H065771B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- metal
- photovoltaic device
- component ratio
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は光起電力装置の製法に関する。TECHNICAL FIELD The present invention relates to a method for manufacturing a photovoltaic device.
［従来の技術および発明が解決しようとする問題点］ 従来より、光起電力装置においては、たとえば透光性基
板上にITO、ITO／SnO2、SnO2、ZnOなどからなる金属酸
化物が形成され透明電極として用いられており、一方、
半導体上にA、Cu、Crなどの金属層が形成され裏面電
極として用いられている。[Problems to be Solved by Conventional Techniques and Inventions] Conventionally, in photovoltaic devices, for example, metal oxides such as ITO, ITO / SnO 2 , SnO 2 , and ZnO are formed on a transparent substrate. Is used as a transparent electrode, while
A metal layer of A, Cu, Cr or the like is formed on a semiconductor and used as a back electrode.
しかしながら、このようにして製造された光起電力装置
を高温で使用すると電気的接続のために設けられた金属
酸化物と金属が接続している部分の金属層が酸化され、
光起電力装置の出力特性が低下するという問題がある。
とくに酸化され易い金属を用いたばあいには、前記光起
電力装置の出力特性の低下は著しくなる。However, when the photovoltaic device manufactured in this manner is used at high temperature, the metal layer provided at the part where the metal oxide and the metal provided for electrical connection are oxidized,
There is a problem that the output characteristics of the photovoltaic device are degraded.
Particularly when a metal that is easily oxidized is used, the output characteristics of the photovoltaic device are significantly deteriorated.
本発明は、光起電力装置を高温で使用したばあいに生ず
る電気的接続部分の金属層の酸化を防ぎ、光起電力装置
の出力特性の低下を少なくするためになされたものであ
る。The present invention has been made to prevent the oxidation of the metal layer of the electrical connection portion which occurs when the photovoltaic device is used at high temperature, and to reduce the deterioration of the output characteristics of the photovoltaic device.
［問題点を解決するための手段］ 本発明の光起電力装置の製法は、透光性基板上に第１の
電極を形成し、該第１の電極の透光性基板と反対側の表
面に当該第１の金属酸化物の電極よりも金属成分比を高
くした金属酸化物を堆積し、表面層の金属成分比が第１
の電極の他の部分の金属成分比より大きくすることを特
徴としている。[Means for Solving the Problems] In the method for manufacturing a photovoltaic device of the present invention, a first electrode is formed on a transparent substrate, and the surface of the first electrode opposite to the transparent substrate is formed. A metal oxide having a higher metal component ratio than that of the first metal oxide electrode is deposited on the
It is characterized in that it is made larger than the metal component ratio of the other parts of the electrode.
このばあい、通常は表面層の金属成分比が内部の金属成
分比の1.2倍以上となるようにするのが好ましい。金属
成分比が90原子％以上のときは、150Å以下にするのが
好ましい。In this case, it is usually preferable that the metal component ratio of the surface layer is 1.2 times or more the internal metal component ratio. When the metal component ratio is 90 atomic% or more, it is preferably 150 Å or less.
本発明に用いる基板の例としては、半導体装置の製造に
用いられる一般的な透光性基板、たとえばガラス、耐熱
性高分子フィルムなどから成形された基板があげられ
る。Examples of the substrate used in the present invention include a general transparent substrate used for manufacturing a semiconductor device, for example, a substrate formed from glass, a heat-resistant polymer film, or the like.
前記基板上には電気的に分離されている第１の電極であ
る金属酸化物電極が形成される。この金属酸化物電極は
いわゆる透明電極であって、その具体例としては、IT
O、SnO2、ZnOなどがあげられる。A metal oxide electrode, which is a first electrode that is electrically isolated, is formed on the substrate. This metal oxide electrode is a so-called transparent electrode, and its specific example is IT
O, SnO 2 , ZnO and the like can be mentioned.
前記透光性基板上に電気的に分離されて形成された透明
電極の上に非晶質半導体が積層される。An amorphous semiconductor is stacked on a transparent electrode that is electrically separated and formed on the transparent substrate.
本発明において非晶質半導体とは、非晶質半導体のみか
らなるものあるいは結晶質を含む非晶質半導体のことで
ある。その具体例としては、a-Si：Ｈ、a-Sic：Ｈ、a-S
iN：Ｈ、μＣ-Si：Ｈ（微結晶）などがあげられる。In the present invention, the amorphous semiconductor means an amorphous semiconductor containing only an amorphous semiconductor or a crystalline semiconductor. Specific examples thereof are a-Si: H, a-Sic: H, aS.
Examples thereof include iN: H and μC-Si: H (microcrystal).
本発明の光起電力装置の製法において、透光性基板上に
形成された電極の表面層の金属成分比を当該電極の他の
部分より大きくするには、あらかじめ金属成分比を高く
した金属酸化物を通常の酸化物上に堆積すればよい。と
ころで、金属成分比をとくに高くするときは、その層の
厚さなどを考慮して第１の電極層の透明性を著しく損う
ことのないようにする必要がある。金属成分比は通常の
分析法たとえばAESで容易に測定することができる。In the method for manufacturing the photovoltaic device of the present invention, in order to make the metal component ratio of the surface layer of the electrode formed on the translucent substrate larger than the other parts of the electrode, metal oxide having a high metal component ratio is prepared in advance. The material may be deposited on a normal oxide. By the way, when the metal component ratio is made particularly high, it is necessary to consider the thickness of the layer so as not to significantly impair the transparency of the first electrode layer. The metal component ratio can be easily measured by a usual analytical method such as AES.
前記非晶質半導体層の一部を除去する方法としては、エ
ネルギービーム法でもよいし、エッチング法でもよい
し、またリフトオフ法でもよい。As a method of removing a part of the amorphous semiconductor layer, an energy beam method, an etching method, or a lift-off method may be used.
第２の電極である裏面金属電極としては、たとえばA
、Cu、Crなどがあげられる。この裏面金属電極を分離
することで複数個直列接続された光起電力装置をうるこ
とができる。As the back surface metal electrode which is the second electrode, for example, A
, Cu, Cr, etc. By separating the back surface metal electrode, a plurality of photovoltaic devices connected in series can be obtained.
前記裏面金属電極を分離する方法としては、エッチング
法でもよいし、エネルギービーム法でもよいしリフトオ
フ法でもよい。As a method of separating the back surface metal electrode, an etching method, an energy beam method, or a lift-off method may be used.
つぎに本発明の光起電力装置の製法を実施例にもとづき
説明する。Next, a method for manufacturing the photovoltaic device of the present invention will be described based on examples.
実施例１ 厚さ1.1mmの青板ガラス上に通常の条件で厚さ4500ÅのS
nO2を堆積し、そののちSnの成分を20（原子）％多くし
たSnO2を100Åの厚さで堆積せしめた透明電極付き基板
を形成した。そののち、レーザビームにより透明電極を
分離し、その上にグロー放電分解法により、基板温度20
0℃、圧力約1.0Torrの条件でｐ型非晶質SiC:H/i型非晶
質Si：H/n型微結晶質SiH:なる構成であって各層の厚さ
がそれぞれ150Å、6000Å、300Åのシリコン系半導体層
を堆積した。そののちレーザビームを用いて半導体層の
一部を除去し透明電極を露出せしめた。Example 1 An S plate having a thickness of 4500Å on a 1.1 mm-thick blue plate glass under normal conditions.
A substrate with a transparent electrode was formed by depositing nO 2 and then depositing SnO 2 with a Sn content of 20 (atom)% increased to a thickness of 100Å. After that, the transparent electrode was separated by a laser beam, and the substrate temperature was 20
Under the conditions of 0 ° C. and a pressure of about 1.0 Torr, p-type amorphous SiC: H / i-type amorphous Si: H / n-type microcrystalline SiH: and the thickness of each layer is 150Å, 6000Å, A 300Å silicon-based semiconductor layer was deposited. After that, a part of the semiconductor layer was removed by using a laser beam to expose the transparent electrode.
そして、A電極を5000Åの厚さになるようにスパッタ
リング法により形成し、化学エッチングによりパターン
化し同一面内に16個の太陽電池が直列に接続された太陽
電池を製造した。この太陽電池１個の有効面積は約8.75
cm2で合計の有効面積は約140cm2であった。Then, an A electrode was formed by a sputtering method so as to have a thickness of 5000 Å, patterned by chemical etching, and a solar cell in which 16 solar cells were connected in series in the same plane was manufactured. The effective area of one solar cell is about 8.75.
In cm 2 , the total effective area was about 140 cm 2 .
えられた16個の太陽電池を直列に接続した太陽電池の特
性および150℃で10時間加熱したのちの該太陽電池の第
１表に示す特性をAM-1、100mV／cm2のソーラーシュミレ
ーターを用いて測定した。その結果を第１表に示す。The characteristics of the solar cells obtained by connecting the 16 solar cells obtained in series and the characteristics shown in Table 1 of the solar cells after heating at 150 ° C for 10 hours were measured by using an AM-1, 100 mV / cm 2 solar simulator. It was measured using. The results are shown in Table 1.
比較例１ 透明電極に金属成分比を高くした金属酸化物からなる表
面層を形成しなかった以外は実施例１と同様にして太陽
電池を製造し、実施例１と同様の項目について測定を行
った。その結果を第１表に示す。Comparative Example 1 A solar cell was manufactured in the same manner as in Example 1 except that the surface layer made of a metal oxide having a high metal component ratio was not formed on the transparent electrode, and the same items as in Example 1 were measured. It was The results are shown in Table 1.
［発明の効果］ 以上説明したように、本発明においては光起電力装置の
製造するばあいに、透明電極の表面層の金属組成比を他
の部分よりも大きくしているので、光起電力装置を高温
で使用したばあいにおいても裏面電極と透明電極の接続
部における金属電極の酸化が防止され、その結果光起電
力装置の出力特性の低下を少なくすることができるとい
う効果がある。 [Effects of the Invention] As described above, in the present invention, when the photovoltaic device is manufactured, the metal composition ratio of the surface layer of the transparent electrode is set to be larger than that of the other parts. Even when the device is used at high temperature, the metal electrode is prevented from being oxidized at the connection part between the back electrode and the transparent electrode, and as a result, the output characteristics of the photovoltaic device can be prevented from deteriorating.
Claims (1)
１の電極の透光性基板と反対側の表面に当該第１の金属
酸化物の電極よりも金属成分比を高くした金属酸化物を
堆積し、表面層の金属成分比が第１の電極の他の部分の
金属成分比より大きくすることを特徴とする光起電力装
置の製法。1. A first electrode is formed on a translucent substrate, and a metal component ratio on the surface of the first electrode opposite to the translucent substrate is higher than that of the electrode of the first metal oxide. A method of manufacturing a photovoltaic device, comprising depositing a metal oxide having a heightened ratio so that a metal component ratio of a surface layer is higher than a metal component ratio of other portions of the first electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62043712A JPH065771B2 (en) | 1987-02-26 | 1987-02-26 | Manufacturing method of photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62043712A JPH065771B2 (en) | 1987-02-26 | 1987-02-26 | Manufacturing method of photovoltaic device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51A Division JPH06232430A (en) | 1993-08-11 | 1993-08-11 | Manufacture of photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63211685A JPS63211685A (en) | 1988-09-02 |
| JPH065771B2 true JPH065771B2 (en) | 1994-01-19 |
Family
ID=12671415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62043712A Expired - Lifetime JPH065771B2 (en) | 1987-02-26 | 1987-02-26 | Manufacturing method of photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH065771B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2808005B2 (en) * | 1989-01-31 | 1998-10-08 | 京セラ株式会社 | Manufacturing method of amorphous solar cell |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6154679A (en) * | 1984-08-25 | 1986-03-18 | Fuji Electric Corp Res & Dev Ltd | Solar cell |
| JPS6154680A (en) * | 1984-08-25 | 1986-03-18 | Fuji Electric Corp Res & Dev Ltd | Thin-film solar cell |
-
1987
- 1987-02-26 JP JP62043712A patent/JPH065771B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63211685A (en) | 1988-09-02 |
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