JPH0657455A - Liquid chemical abrasive for brass - Google Patents
Liquid chemical abrasive for brassInfo
- Publication number
- JPH0657455A JPH0657455A JP23520792A JP23520792A JPH0657455A JP H0657455 A JPH0657455 A JP H0657455A JP 23520792 A JP23520792 A JP 23520792A JP 23520792 A JP23520792 A JP 23520792A JP H0657455 A JPH0657455 A JP H0657455A
- Authority
- JP
- Japan
- Prior art keywords
- liq
- hydrogen peroxide
- brass
- abrasive
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は黄銅にめっき処理を施す
場合の前処理用として使用する化学研磨液に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical polishing liquid used for pretreatment when brass is plated.
【０００２】[0002]
【従来の技術およびその問題点】従来、黄銅のめっき前
処理用の化学研磨液としては、キリンスと呼ばれる硫
酸、硝酸、塩酸の混合液、あるいは、過酸化水素水に硫
酸のみを添加した過酸化水素系の液が使用されている。2. Description of the Related Art Conventional chemical polishing liquids for pretreatment of brass plating have been known as Kirins, a mixed liquid of sulfuric acid, nitric acid and hydrochloric acid, or peroxide containing only sulfuric acid added to hydrogen peroxide water. A hydrogen-based liquid is used.
【０００３】しかし、キリンス系の液では、硝酸を使用
するため分解による亜硝酸ガスが大量に発生して作業環
境の悪化が生じ、液の混合時に発熱を伴うために配合の
難しさを有し、さらには６−３黄銅のような二相合金の
場合には脱亜鉛現象が生じる等の問題点を有するもので
ある。また、過酸化水素系の液では、素材から溶出した
金属イオンが過酸化水素水の分解を促進し、安定的な処
理が出来にくいものである。However, since a nitric acid-based liquid uses nitric acid, a large amount of nitrous acid gas is generated due to decomposition and the working environment is deteriorated, and heat is generated when the liquids are mixed, resulting in difficulty in blending. Further, in the case of a two-phase alloy such as 6-3 brass, there is a problem that a dezincification phenomenon occurs. In addition, in a hydrogen peroxide-based liquid, metal ions eluted from the material accelerate the decomposition of hydrogen peroxide water, which makes stable treatment difficult.
【０００４】本発明は上記従来の化学研磨液の有する問
題点を解決し、キリンスのような亜硝酸ガスの発生、液
配合時の発熱、脱亜鉛現象を防止し、また、金属イオン
蓄積による過酸化水素水の分解もない黄銅のめっき前処
理用の化学研磨液を提供することを目的とするものであ
る。The present invention solves the problems of the above-mentioned conventional chemical polishing liquids, prevents the generation of nitrous acid gas such as giraffe, the heat generation during liquid mixing, and the dezincification phenomenon, and also prevents the excessive generation of metal ions. It is an object of the present invention to provide a chemical polishing liquid for pretreatment of brass plating which does not decompose hydrogen peroxide water.
【０００５】[0005]
【問題点を解決するための手段】本発明の化学研磨液
は、過酸化水素水中にオキシキノリン、錯化剤、界面活
性剤を配合したことを特徴とするものであり、これによ
り前記問題点を解決したものである。The chemical polishing liquid of the present invention is characterized by containing oxyquinoline, a complexing agent and a surfactant in hydrogen peroxide water. Is the solution.
【０００６】本発明では、上記のような組成のものに、
さらに必要に応じて、リン酸、硫酸を添加することが出
来、この添加量により研磨速度と選択的研磨により表面
状態を光沢面あるいは梨地仕上げ面のいずれかに変化さ
せることができる。In the present invention, in addition to the above composition,
Furthermore, phosphoric acid and sulfuric acid can be added as required, and the surface state can be changed to either a glossy surface or a satin finished surface by the polishing rate and selective polishing depending on the addition amount.
【０００７】本発明に係る化学研磨液の組成を示せば、 過酸化水素水 ５〜２０重量％ 安定剤（オキシキノリン） ０．１〜２０ｇ／ｌ 錯化剤（有機酸） １０〜４００ｇ／ｌ 非イオン性界面活性剤 ０．０１〜１容量％ である。The composition of the chemical polishing liquid according to the present invention is as follows: hydrogen peroxide water 5-20% by weight stabilizer (oxyquinoline) 0.1-20 g / l complexing agent (organic acid) 10-400 g / l Nonionic surfactant 0.01 to 1% by volume.
【０００８】このように、本発明では、過酸化水素水の
安定剤としてオキシキノリンを配合し、さらに錯化剤と
を配合したものであるため、溶出した金属イオンは錯化
剤に捕集され、過酸化水素の分解促進が回避できる。ま
た、界面活性剤は素材表面の濡れ性の向上と、研磨液面
での気泡発生によるミスト防止効果を有する。さらに、
酸を添加する場合には、黄銅の粒界に発生する電位差か
らの局部的な研磨速度を変え、表面状態を梨地仕上げと
する作用を促進する。As described above, according to the present invention, oxyquinoline is added as a stabilizer for hydrogen peroxide solution, and further, a complexing agent is added. Therefore, the eluted metal ions are collected by the complexing agent. The acceleration of decomposition of hydrogen peroxide can be avoided. Further, the surfactant has an effect of improving the wettability of the material surface and an effect of preventing mist due to generation of bubbles on the surface of the polishing liquid. further,
When an acid is added, the local polishing rate from the potential difference generated at the grain boundary of brass is changed to promote the action of making the surface state a satin finish.
【０００９】[0009]
【発明の効果】以上のような本発明によれば、キリンス
系の液のようなガスの発生、液配合の困難さ、脱亜鉛現
象による素材不良を防止出来、また、従来の過酸化水素
水系のような金属イオン蓄積による過酸化水素水の分解
もなく、連続作業が可能であり、研磨液の調整、選択的
研磨による梨地仕上げできる化学研磨液が得られる。以
下に本発明を実施例に基づいて説明する。As described above, according to the present invention, it is possible to prevent generation of gas such as a Kirin type liquid, difficulty in mixing the liquid, and material defects due to dezincification phenomenon. As described above, there is no decomposition of hydrogen peroxide solution due to metal ion accumulation, continuous operation is possible, and a chemical polishing liquid capable of adjusting the polishing liquid and performing a satin finish by selective polishing is obtained. The present invention will be described below based on examples.
【００１０】[0010]
【実施例】黄銅（ＪＩＳ Ｃ２７００Ｔ，63.0％Ｃｕ−
0.07％Ｐｂ−0.05％Ｆｅ−残部Ｚｎ）の化学研磨を表１
に示す研磨液を用いて、液温を室温とし、処理時間を代
えて外観観察を行なった。その結果を表２に示す。[Example] Brass (JIS C2700T, 63.0% Cu-
Chemical polishing of 0.07% Pb-0.05% Fe-balance Zn) is shown in Table 1.
Using the polishing liquid shown in (1), the liquid temperature was set to room temperature, and the external appearance was observed while changing the processing time. The results are shown in Table 2.
【００１１】[0011]
【表１】 [Table 1]
【００１２】[0012]
【表２】 [Table 2]
Claims (1)
であって、過酸化水素水中にオキシキノリン、錯化剤、
界面活性剤を配合したことを特徴とする黄銅用化学研磨
液。1. A chemical polishing liquid for brass as a pretreatment for plating, comprising oxyquinoline, a complexing agent, and hydrogen peroxide in water.
A chemical polishing liquid for brass characterized by containing a surfactant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23520792A JP3378033B2 (en) | 1992-08-11 | 1992-08-11 | Chemical polishing liquid for brass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23520792A JP3378033B2 (en) | 1992-08-11 | 1992-08-11 | Chemical polishing liquid for brass |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0657455A true JPH0657455A (en) | 1994-03-01 |
| JP3378033B2 JP3378033B2 (en) | 2003-02-17 |
Family
ID=16982670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23520792A Expired - Fee Related JP3378033B2 (en) | 1992-08-11 | 1992-08-11 | Chemical polishing liquid for brass |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3378033B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6562719B2 (en) | 2000-08-04 | 2003-05-13 | Hitachi, Ltd. | Methods of polishing, interconnect-fabrication, and producing semiconductor devices |
| JP2004068068A (en) * | 2002-08-05 | 2004-03-04 | Nippon Parkerizing Co Ltd | Combined material and method for producing the same |
| US6774041B1 (en) | 1999-12-27 | 2004-08-10 | Renesas Technology Corp. | Polishing method, metallization fabrication method, method for manufacturing semiconductor device and semiconductor device |
| US7237331B2 (en) | 2002-12-24 | 2007-07-03 | Tdk Corporation | Electronic part manufacturing method and electronic part |
| JP2009094534A (en) * | 2008-12-26 | 2009-04-30 | Dainippon Screen Mfg Co Ltd | Etching treatment method of substrate peripheral edge part, and etching treatment apparatus of substrate peripheral edge part |
| US7987590B2 (en) | 2003-02-27 | 2011-08-02 | Tdk Corporation | Method for manufacturing an electronic part |
-
1992
- 1992-08-11 JP JP23520792A patent/JP3378033B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6774041B1 (en) | 1999-12-27 | 2004-08-10 | Renesas Technology Corp. | Polishing method, metallization fabrication method, method for manufacturing semiconductor device and semiconductor device |
| US7183212B2 (en) | 1999-12-27 | 2007-02-27 | Renesas Technology Corp. | Polishing method, metallization fabrication method, method for manufacturing semiconductor device and semiconductor device |
| US6562719B2 (en) | 2000-08-04 | 2003-05-13 | Hitachi, Ltd. | Methods of polishing, interconnect-fabrication, and producing semiconductor devices |
| US6750128B2 (en) | 2000-08-04 | 2004-06-15 | Renesas Technology Corporation | Methods of polishing, interconnect-fabrication, and producing semiconductor devices |
| JP2004068068A (en) * | 2002-08-05 | 2004-03-04 | Nippon Parkerizing Co Ltd | Combined material and method for producing the same |
| US7237331B2 (en) | 2002-12-24 | 2007-07-03 | Tdk Corporation | Electronic part manufacturing method and electronic part |
| US7987590B2 (en) | 2003-02-27 | 2011-08-02 | Tdk Corporation | Method for manufacturing an electronic part |
| JP2009094534A (en) * | 2008-12-26 | 2009-04-30 | Dainippon Screen Mfg Co Ltd | Etching treatment method of substrate peripheral edge part, and etching treatment apparatus of substrate peripheral edge part |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3378033B2 (en) | 2003-02-17 |
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