JPH065743A - Liquid epoxy resin composition for sealing semiconductor - Google Patents

Liquid epoxy resin composition for sealing semiconductor

Info

Publication number
JPH065743A
JPH065743A JP4180496A JP18049692A JPH065743A JP H065743 A JPH065743 A JP H065743A JP 4180496 A JP4180496 A JP 4180496A JP 18049692 A JP18049692 A JP 18049692A JP H065743 A JPH065743 A JP H065743A
Authority
JP
Japan
Prior art keywords
epoxy resin
resin composition
less
particle size
liquid epoxy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4180496A
Other languages
Japanese (ja)
Inventor
Shigeru Koshibe
茂 越部
Yoshito Takamatsu
義人 高松
Masatoshi Sakai
正年 酒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tonen Chemical Corp
Original Assignee
Tonen Sekiyu Kagaku KK
Tonen Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tonen Sekiyu Kagaku KK, Tonen Chemical Corp filed Critical Tonen Sekiyu Kagaku KK
Priority to JP4180496A priority Critical patent/JPH065743A/en
Publication of JPH065743A publication Critical patent/JPH065743A/en
Pending legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To seal semiconductor with plastic having high filling properties and small thermal expansion coefficient. CONSTITUTION:Liquid epoxy resin composition for sealing semiconductor so contains amorphous spherical silica having 90wt.% or more of particles having 40mum or less of particle size in a particle size distribution of 1 to less than 15mum of mean particle size and 10m<2>/g or less of a specific surface area as to be 40 to less than 90wt.% of total amount of the epoxy resin, curing agent and the silica.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体封止用液状エポ
キシ樹脂組成物に関し、更に詳しくは、COB(chi
p on boad)あるいはTAB(tape au
tomated bonding)用の半導体のプラス
チック封止等に有用な半導体封止用液状エポキシ樹脂組
成物に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid epoxy resin composition for semiconductor encapsulation, more specifically, COB (chi)
p on board) or TAB (tape au)
The present invention relates to a liquid epoxy resin composition for semiconductor encapsulation which is useful for plastic encapsulation of semiconductors for tomated bonding.

【0002】[0002]

【従来の技術】近年の技術の進歩に伴い、現在では半導
体はLSI、VLSIと呼ばれる高集積化されたものに
なっている。この高集積度半導体素子はその外部環境か
ら保護すべく合成樹脂組成物で封止されている。かかる
半導体を封止するための樹脂封止材料は大きく分類する
と、移送成形用の固形封止材料と滴下成形用の液状封止
材料の二種類に分けられる。産業用には信頼性の高い固
形封止材料が主に使用されており、液状封止材料は電
卓、時計、カメラ等の民生用機器の一部に使用されてい
る。液状封止材料としては、例えばビスフェノールA型
のエポキシ樹脂、硬化剤として酸無水物、硬化触媒とし
てイミダゾール、さらに顔料、溶媒等を配合したものが
多く、かかる液状封止材料の塗布性をいかに改良するか
に焦点がおかれていた。例えば、上記の液状封止材料に
フュームドシリカ等を加えたり、沸点の異なる複数の溶
媒を入れることにより成膜性の向上を図ることがなされ
てきた。しかし、最近になって液状封止材料についても
高い半導体の信頼性が要求されるようになってきた。こ
れに対応すべく、固形封止材料用のシリカを液状封止材
料用に転用する試みがなされてきたが、この方法は本来
固形封止材料用の技術であるために、種々の問題が発生
している。例えば、COBのワイヤ部やバンプ部あるい
はTABのバンプ部やスリット部等への樹脂組成物の充
填性が低下し、その結果として、半導体の信頼性が低く
なるといったこと等が挙げられる。
2. Description of the Related Art With the advance of technology in recent years, semiconductors are now highly integrated such as LSI and VLSI. This highly integrated semiconductor device is sealed with a synthetic resin composition to protect it from the external environment. Resin encapsulating materials for encapsulating such semiconductors can be roughly classified into two types: solid encapsulating materials for transfer molding and liquid encapsulating materials for drop molding. Reliable solid encapsulating materials are mainly used for industrial applications, and liquid encapsulating materials are used for some consumer devices such as calculators, watches, and cameras. As the liquid encapsulating material, for example, there are many bisphenol A type epoxy resins, acid anhydride as a curing agent, imidazole as a curing catalyst, and a pigment, a solvent, and the like. The focus was on what to do. For example, it has been attempted to improve the film-forming property by adding fumed silica or the like to the above liquid encapsulating material or adding a plurality of solvents having different boiling points. However, recently, high reliability of the semiconductor has been required for the liquid sealing material. In order to respond to this, attempts have been made to divert silica for solid encapsulating materials to liquid encapsulating materials, but since this method is originally a technique for solid encapsulating materials, various problems occur. is doing. For example, the filling property of the resin composition into the wire portion or bump portion of the COB or the bump portion or slit portion of the TAB is lowered, and as a result, the reliability of the semiconductor is lowered.

【0003】また、半導体の信頼性を向上させる最も良
い方法は封止材料の熱膨張率をできる限り半導体に近づ
けること、即ち封止材料の熱膨張率をできるだけ小さく
することである。現在、最も良い方法は非晶質のシリカ
を高充填することとされている。固形封止材料用のシリ
カの場合には、高充填を可能にするために、幅広い粒度
分布を持つ球状シリカ及び破砕状シリカを単独で、ある
いは混合して使用している。しかし、この固形封止材料
用のシリカを液状封止材料用に転用しても塗布性及び充
填性に劣り、従って半導体の信頼性の点で十分ではな
い。
The best way to improve the reliability of the semiconductor is to make the thermal expansion coefficient of the sealing material as close as possible to that of the semiconductor, that is, to make the thermal expansion coefficient of the sealing material as small as possible. At present, the best method is to highly fill amorphous silica. In the case of silica for a solid encapsulating material, spherical silica and crushed silica having a wide particle size distribution are used alone or in combination in order to enable high filling. However, even if this silica for a solid encapsulating material is diverted to a liquid encapsulating material, the coating property and the filling property are inferior, and therefore the semiconductor reliability is not sufficient.

【0004】[0004]

【発明が解決しようとする課題】本発明は、このような
問題点に鑑みてなされたものであって、半導体の信頼性
を高める半導体封止用液状エポキシ樹脂組成物に関す
る。
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and relates to a liquid epoxy resin composition for semiconductor encapsulation which improves the reliability of the semiconductor.

【0005】[0005]

【課題を解決するための手段】即ち、本発明は平均粒径
が1μm以上15μm未満、粒度分布において40μm
以下の粒径の粒子が90重量%以上、及び比表面積が1
0m2 /g以下の非晶質球状シリカをエポキシ樹脂、硬
化剤及び該非晶質球状シリカの合計量に対して40重量
%以上90重量%未満含むことを特徴とする半導体封止
用液状エポキシ樹脂組成物である。
That is, the present invention has an average particle size of 1 μm or more and less than 15 μm and a particle size distribution of 40 μm.
90% by weight or more of particles having the following particle diameters and a specific surface area of 1
Liquid epoxy resin for semiconductor encapsulation, containing 0 m 2 / g or less of amorphous spherical silica in an amount of 40% by weight or more and less than 90% by weight based on the total amount of the epoxy resin, the curing agent and the amorphous spherical silica. It is a composition.

【0006】本発明で使用するシリカは非晶質球状シリ
カである。破砕状シリカでは液状組成物として使用した
場合に、粘度が高く、高充填性に欠け、かつ粒子表面が
鋭利であるため半導体の配線を切断する可能性があり好
ましくない。また、結晶質シリカは非晶質シリカと比べ
て熱膨張率が大きく好ましくない。該非晶質球状シリカ
は、例えば、高純度天然石英粉末又は高純度合成シリカ
粉末を酸素−プロパン、酸素−水素等により火炎溶融す
る方法、あるいは乳化反応によるゾル‐ゲル法等により
製造することができる。このようにして製造した非晶質
球状シリカは、必ずしもその粒子形状が真球である必要
はなく多少楕円形の球状体が含まれていてもよい。
The silica used in the present invention is amorphous spherical silica. When crushed silica is used as a liquid composition, it has a high viscosity, lacks a high filling property, and has a sharp particle surface, which may cut the semiconductor wiring, which is not preferable. Further, crystalline silica has a large coefficient of thermal expansion as compared with amorphous silica, which is not preferable. The amorphous spherical silica can be produced by, for example, a method of flame-melting high-purity natural quartz powder or high-purity synthetic silica powder with oxygen-propane, oxygen-hydrogen, or the like, or a sol-gel method by an emulsification reaction, or the like. . The thus-produced amorphous spherical silica does not necessarily have to have a true spherical shape, and may have a slightly elliptical spherical body.

【0007】本発明で使用する該非晶質球状シリカの平
均粒径は1μm以上15μm未満であり、好ましくは2
μm以上8μm未満である。ここで、平均粒径はレーザ
ー回折法による寸法で表示する(D50)。該非晶質球状
シリカの平均粒径が1μm未満の場合には、半導体封止
用液状エポキシ樹脂組成物の粘度が大きく高充填が困難
となり、また、15μm以上の場合には、該エポキシ樹
脂組成物内での分級が早く均一分散性が低下するため好
ましくない。
The amorphous spherical silica used in the present invention has an average particle diameter of 1 μm or more and less than 15 μm, preferably 2 μm.
It is at least μm and less than 8 μm. Here, the average particle size is expressed by the dimension by the laser diffraction method (D 50 ). When the average particle size of the amorphous spherical silica is less than 1 μm, the viscosity of the liquid epoxy resin composition for semiconductor encapsulation is large and high filling becomes difficult, and when it is 15 μm or more, the epoxy resin composition. It is not preferable because the classification in the interior is quick and the uniform dispersibility is lowered.

【0008】また、該非晶質球状シリカは、粒度分布に
おいて粒径が40μm以下の粒子が90重量%以上であ
り、好ましくは粒径が24μm以下の粒子が95重量%
以上がよい。40μm以下の粒子が90重量%未満の場
合には、COBのワイヤー部及びバンプ部、並びにTA
Bのバンプ部及びスリット部への充填性が低下するので
好ましくない。
The amorphous spherical silica has a particle size distribution of 90% by weight or more of particles having a particle size of 40 μm or less, preferably 95% by weight of particles having a particle size of 24 μm or less.
The above is good. If the amount of particles of 40 μm or less is less than 90% by weight, the wire portion and bump portion of COB, and TA
It is not preferable because the filling property of B into the bump portion and the slit portion is deteriorated.

【0009】また、該非晶質球状シリカの比表面積は1
0m2 /g以下であり、好ましくは5m2 /g以下がよ
い。比表面積が10m2 /gを越える場合には、半導体
封止用液状エポキシ樹脂組成物の粘度が高くなり好まし
くない。
The specific surface area of the amorphous spherical silica is 1
It is 0 m 2 / g or less, preferably 5 m 2 / g or less. When the specific surface area exceeds 10 m 2 / g, the viscosity of the liquid epoxy resin composition for semiconductor encapsulation becomes high, which is not preferable.

【0010】上記非晶質球状シリカの配合量は、半導体
封止用液状エポキシ樹脂組成物中のエポキシ樹脂、硬化
剤及び該非晶質球状シリカの合計量に対して40重量%
以上90重量%未満であり、好ましくは55重量%以上
80重量%未満である。該非晶質球状シリカの配合量が
40重量%未満では、硬化後の半導体封止用液状エポキ
シ樹脂組成物の線膨脹係数及び吸水率が高くなり好まし
くない。また、配合量が90重量%以上では、半導体封
止用液状エポキシ樹脂組成物の粘度が上昇し封止作業性
が悪くなる。
The content of the amorphous spherical silica is 40% by weight based on the total amount of the epoxy resin, the curing agent and the amorphous spherical silica in the liquid epoxy resin composition for semiconductor encapsulation.
It is at least 90% by weight and preferably at least 55% by weight and less than 80% by weight. If the compounding amount of the amorphous spherical silica is less than 40% by weight, the coefficient of linear expansion and water absorption of the liquid epoxy resin composition for semiconductor encapsulation after curing are unfavorably high. On the other hand, if the blending amount is 90% by weight or more, the viscosity of the liquid epoxy resin composition for semiconductor encapsulation increases and the sealing workability deteriorates.

【0011】本発明で使用されるエポキシ樹脂は、通常
使用されているものでよく、例えばビスフェノールA
型、ビスフェノールF型、ビフェノール型、多官能型等
のエポキシ樹脂等が挙げられ、また、これら二種以上を
混合したものであってもよい。該エポキシ樹脂は、イオ
ン性不純物の含有量が多いと封止後の半導体の耐湿信頼
性に悪影響を及ぼすため、ナトリウムイオンや塩素イオ
ン等のイオン性不純物の含有量の極力少ないものが好ま
しい。
The epoxy resin used in the present invention may be a commonly used epoxy resin, for example, bisphenol A.
Type, bisphenol F type, biphenol type, polyfunctional type epoxy resin and the like, and may be a mixture of two or more kinds thereof. Since the epoxy resin adversely affects the moisture resistance reliability of the semiconductor after encapsulation when the content of ionic impurities is large, it is preferable that the content of ionic impurities such as sodium ions and chlorine ions is as small as possible.

【0012】本発明で使用する硬化剤は通常使用されて
いるものでよく、多価フェノール類、芳香族系多塩基酸
類、芳香族ポリアミン類等が挙げられ、例えばフェノー
ルノボラック、ビフェノール型ノボラック、ビスフェノ
ールA型ノボラック等のノボラック、無水フタル酸、無
水ピロメリット酸、無水ベンゾフェノンテトラカルボン
酸等の酸無水物あるいはジアミノジフェニルメタン、ジ
アミノジフェニルスルホン、メタフェニレンジアミン等
のアミン等が使用される。
The hardener used in the present invention may be a commonly used one, and examples thereof include polyhydric phenols, aromatic polybasic acids, aromatic polyamines, and the like. For example, phenol novolac, biphenol type novolac and bisphenol. A novolak such as A-type novolac, an acid anhydride such as phthalic anhydride, pyromellitic dianhydride, benzophenone tetracarboxylic anhydride, or an amine such as diaminodiphenylmethane, diaminodiphenylsulfone, or metaphenylenediamine is used.

【0013】また、本発明では半導体の封止作業性を向
上させるべく、半導体封止用液状エポキシ樹脂組成物は
溶媒を含むことが好ましい。該溶媒は沸点の異なる複数
の溶媒を混合し、塗布性や成膜性の良いものを適宜使用
する。例えば、アセトン、メチルエチルケトン、メチル
イソブチルケトン等のケトン類、メタノール、エタノー
ル、イソプロパノール、ブタノール、イソブタノール等
のアルコール類、ヘキサン、ヘプタン、ベンゼン、トル
エン、キシレン等の炭化水素類、ジアセトンアルコー
ル、エチレングリコールモノメチルエーテル、エチレン
グリコールモノエチルエーテル、エチレングリコールモ
ノブチルエーテル、エチレングリコールモノメチルエー
テルアセテート、エチレングリコールモノエチルエーテ
ルアセテート、エチレングリコールモノブチルエーテル
アセテート、ジエチレングリコールモノメチルエーテ
ル、ジエチレングリコールモノエチルエーテル、ジエチ
レングリコールモノブチルエーテル等が挙げられる。該
溶媒の配合量は、半導体封止用液状エポキシ樹脂組成物
中、好ましくは60重量%未満であり、特に好ましくは
5重量%以上30重量%未満である。無溶媒では該エポ
キシ樹脂組成物の粘度が高くなり作業性が悪く、また、
60重量%以上では該エポキシ樹脂組成物中の上記非晶
質球状シリカとエポキシ樹脂、硬化剤、溶媒が分離しや
すくなり好ましくない。
In the present invention, the liquid epoxy resin composition for semiconductor encapsulation preferably contains a solvent in order to improve the workability of semiconductor encapsulation. As the solvent, a plurality of solvents having different boiling points are mixed, and those having good coatability and film forming property are appropriately used. For example, ketones such as acetone, methyl ethyl ketone and methyl isobutyl ketone, alcohols such as methanol, ethanol, isopropanol, butanol and isobutanol, hydrocarbons such as hexane, heptane, benzene, toluene and xylene, diacetone alcohol and ethylene glycol. Examples thereof include monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether. The content of the solvent in the liquid epoxy resin composition for semiconductor encapsulation is preferably less than 60% by weight, particularly preferably 5% by weight or more and less than 30% by weight. In the absence of solvent, the viscosity of the epoxy resin composition becomes high and the workability is poor, and
When it is 60% by weight or more, the above amorphous spherical silica in the epoxy resin composition is easily separated from the epoxy resin, the curing agent and the solvent, which is not preferable.

【0014】本発明の半導体封止用液状エポキシ樹脂組
成物に、以上述べた成分の他に、必要に応じて通常使用
される種々の添加剤、例えば第三級アミン類や有機リン
化合物等の硬化触媒、難燃材、着色剤、シランカップリ
ング剤等を配合することができる。
In the liquid epoxy resin composition for semiconductor encapsulation of the present invention, in addition to the above-mentioned components, various additives which are usually used, such as tertiary amines and organophosphorus compounds, are used as required. A curing catalyst, a flame retardant, a coloring agent, a silane coupling agent, etc. can be added.

【0015】本発明の半導体封止用液状エポキシ樹脂組
成物の調製は、以上述べた成分を、例えばニーダー、ロ
ール、ミキサー等により混練することにより行うことが
できる。
The liquid epoxy resin composition for semiconductor encapsulation of the present invention can be prepared by kneading the above-mentioned components with, for example, a kneader, roll, mixer or the like.

【0016】本発明の液状エポキシ樹脂組成物を使用し
て半導体を封止すると、高い充填性を有する均質で熱膨
張率の小さい半導体プラスチック封止が可能となる。産
業用の半導体封止用固形エポキシ樹脂組成物に優る信頼
性を挙げることができる。また、本発明の液状エポキシ
樹脂組成物により、半導体パッケージの小型化が可能と
なりパソコン、VTR等の民生用機器の小型化を促進す
ることができる。
When a semiconductor is encapsulated using the liquid epoxy resin composition of the present invention, it is possible to encapsulate a semiconductor plastic having a high filling property and a small coefficient of thermal expansion. The reliability superior to the solid epoxy resin composition for industrial semiconductor encapsulation can be mentioned. Further, the liquid epoxy resin composition of the present invention enables miniaturization of a semiconductor package, which can promote miniaturization of consumer equipment such as personal computers and VTRs.

【0017】以下、実施例、比較例により本発明を更に
詳しく説明するが、本発明はこれら実施例に限定される
ものではない。尚、以下の実施例、比較例中で部とある
のは全て重量部を示す。
Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples, but the present invention is not limited to these Examples. In the following examples and comparative examples, all parts are parts by weight.

【0018】[0018]

【実施例】【Example】

【0019】[0019]

【実施例1】エポキシ樹脂としてビスフェノールA型エ
ポキシ樹脂(RE‐410 日本化薬(株)製)及びビ
フェノール型エポキシ樹脂(YX‐4000H 油化シ
ェル(株)製)をそれぞれ7部、硬化剤としてフェノー
ルノボラック(PSM‐4261 群栄化学工業(株)
製)7部、硬化促進剤としてトリフェニルホスフィン
(TPP 北興化学(株)製)0.2部、顔料としてカ
ーボン(MA‐600三菱化成(株)製)0.3部、シ
ランカップリング剤としてγ‐グリシドキシプロピルト
リメトキシシラン(A‐187 日本ユニカー(株)
製)を0.5部及び平均粒径2μm、最大粒径15μ
m、比表面積4m2 /gの非晶質球状シリカ79部及び
溶媒としてメチルエチルケトンとトルエンの混合物(混
合比1/1)20部を加熱ニーダーで混練し液状エポキ
シ樹脂組成物を調製した。
Example 1 7 parts each of a bisphenol A type epoxy resin (RE-410 manufactured by Nippon Kayaku Co., Ltd.) and a biphenol type epoxy resin (YX-4000H manufactured by Yuka Shell Co., Ltd.) were used as epoxy resins, and as a curing agent. Phenol novolac (PSM-4261 Gunei Chemical Industry Co., Ltd.)
7 parts), 0.2 parts of triphenylphosphine (manufactured by TPP Kitako Chemical Co., Ltd.) as a curing accelerator, 0.3 parts of carbon (MA-600 manufactured by Mitsubishi Kasei Co., Ltd.) as a pigment, and a silane coupling agent. γ-glycidoxypropyltrimethoxysilane (A-187 Nippon Unicar Co., Ltd.)
0.5 part) and average particle size 2 μm, maximum particle size 15 μm
m, 79 parts of amorphous spherical silica having a specific surface area of 4 m 2 / g, and 20 parts of a mixture of methyl ethyl ketone and toluene (mixing ratio 1/1) as a solvent were kneaded with a heating kneader to prepare a liquid epoxy resin composition.

【0020】得られた液状エポキシ樹脂組成物につい
て、作業性、材料特性及び信頼性を評価した。その結果
を表1に示す。
The workability, material properties and reliability of the obtained liquid epoxy resin composition were evaluated. The results are shown in Table 1.

【0021】[0021]

【実施例2〜8】非晶質球状シリカとして、表1に示す
平均粒径、最大粒径、比表面積を有するシリカをそれぞ
れ使用した以外は実施例1と同様にして液状エポキシ樹
脂組成物を調製し各種評価を実施した。その結果を表1
に示す。
Examples 2 to 8 Liquid epoxy resin compositions were prepared in the same manner as in Example 1 except that silica having the average particle size, maximum particle size and specific surface area shown in Table 1 was used as the amorphous spherical silica. It prepared and evaluated variously. The results are shown in Table 1.
Shown in.

【0022】[0022]

【実施例9】エポキシ樹脂としてビスフェノールA型エ
ポキシ樹脂(RE‐410 日本化薬(株)製)及びビ
フェノール型エポキシ樹脂(YX‐4000H 油化シ
ェル(株)製)をそれぞれ18部、硬化剤としてフェノ
ールノボラック(PSM‐4261 群栄化学工業
(株)製)18部、及び表1に示す平均粒径4μm、最
大粒径20μm、比表面積2m2 /gの非晶質球状シリ
カ46部を使用した以外は実施例1と同様にして液状エ
ポキシ樹脂組成物を調製し各種評価を実施した。その結
果を表1に示す。
Example 9 18 parts of bisphenol A type epoxy resin (RE-410 manufactured by Nippon Kayaku Co., Ltd.) and biphenol type epoxy resin (YX-4000H manufactured by Yuka Shell Co., Ltd.) were used as epoxy resins, respectively, and as a curing agent. 18 parts of phenol novolac (PSM-4261 manufactured by Gunei Chemical Industry Co., Ltd.) and 46 parts of amorphous spherical silica having an average particle size of 4 μm, a maximum particle size of 20 μm and a specific surface area of 2 m 2 / g shown in Table 1 were used. A liquid epoxy resin composition was prepared and various evaluations were performed in the same manner as in Example 1 except for the above. The results are shown in Table 1.

【0023】[0023]

【比較例1】表1に示す平均粒径4μm、最大粒径45
μm、比表面積2m2 /gの非晶質シリカであって40
μmを越える粒径の粒子を15%含むシリカを使用した
以外は実施例1と同様にして液状エポキシ樹脂組成物を
調製し各種評価を実施した。その結果を表1に示す。
Comparative Example 1 Average particle size 4 μm and maximum particle size 45 shown in Table 1
40 μm of an amorphous silica with a specific surface area of 2 m 2 / g
A liquid epoxy resin composition was prepared and various evaluations were performed in the same manner as in Example 1 except that silica containing 15% of particles having a particle size exceeding μm was used. The results are shown in Table 1.

【0024】[0024]

【比較例2〜4】非晶質球状シリカとして、表1に示す
平均粒径、最大粒径、比表面積を有するシリカをそれぞ
れ使用した以外は実施例1と同様にして液状エポキシ樹
脂組成物を調製し各種評価を実施した。その結果を表1
に示す。
Comparative Examples 2 to 4 Liquid epoxy resin compositions were prepared in the same manner as in Example 1 except that silica having average particle diameter, maximum particle diameter and specific surface area shown in Table 1 were used as the amorphous spherical silica. It prepared and evaluated variously. The results are shown in Table 1.
Shown in.

【0025】[0025]

【比較例5】エポキシ樹脂としてビスフェノールA型エ
ポキシ樹脂(RE‐410 日本化薬(株)製)及びビ
フェノール型エポキシ樹脂(YX‐4000H 油化シ
ェル(株)製)をそれぞれ23部、硬化剤としてフェノ
ールノボラック(PSM‐4261 群栄化学工業
(株)製)23部、及び表1に示す平均粒径4μm、最
大粒径20μm、比表面積2m2 /gの非晶質球状シリ
カ31部を使用した以外は実施例1と同様にして液状エ
ポキシ樹脂組成物を調製し各種評価を実施した。その結
果を表1に示す。
[Comparative Example 5] Bisphenol A type epoxy resin (RE-410 manufactured by Nippon Kayaku Co., Ltd.) and biphenol type epoxy resin (YX-4000H manufactured by Yuka Shell Co., Ltd.) were used as the epoxy resin in 23 parts each, and as a curing agent 23 parts of phenol novolac (PSM-4261 manufactured by Gunei Chemical Industry Co., Ltd.) and 31 parts of amorphous spherical silica having an average particle size of 4 μm, a maximum particle size of 20 μm and a specific surface area of 2 m 2 / g shown in Table 1 were used. A liquid epoxy resin composition was prepared and various evaluations were performed in the same manner as in Example 1 except for the above. The results are shown in Table 1.

【0026】[0026]

【比較例6】表1に示す平均粒径4μm、最大粒径20
μm、比表面積2m2 /gの破砕状シリカ79部を使用
した以外は実施例1と同様にして液状エポキシ樹脂組成
物を調製したが、作業性が悪く封止が不可能であった。
Comparative Example 6 Average particle size 4 μm and maximum particle size 20 shown in Table 1
A liquid epoxy resin composition was prepared in the same manner as in Example 1 except that 79 parts of crushed silica having a micrometer and a specific surface area of 2 m 2 / g was used, but the workability was poor and sealing was impossible.

【0027】[0027]

【比較例7】エポキシ樹脂としてビスフェノールA型エ
ポキシ樹脂(RE‐410 日本化薬(株)製)及びビ
フェノール型エポキシ樹脂(YX‐4000H 油化シ
ェル(株)製)をそれぞれ18部、硬化剤としてフェノ
ールノボラック(PSM‐4261 群栄化学工業
(株)製)18部、及び比較例6で用いたと同様の性状
を有する破砕状シリカ46部を使用した以外は実施例1
と同様にして液状エポキシ樹脂組成物を調製し各種評価
を実施した。その結果を表1に示す。
Comparative Example 7 18 parts of bisphenol A type epoxy resin (RE-410 manufactured by Nippon Kayaku Co., Ltd.) and biphenol type epoxy resin (YX-4000H manufactured by Yuka Shell Co., Ltd.) were used as epoxy resins, respectively, and as a curing agent. Example 1 except that 18 parts of phenol novolac (PSM-4261 manufactured by Gunei Chemical Industry Co., Ltd.) and 46 parts of crushed silica having the same properties as used in Comparative Example 6 were used
A liquid epoxy resin composition was prepared and various evaluations were performed in the same manner as in. The results are shown in Table 1.

【0028】[0028]

【表1】 表1中の評価方法は下記の通りである。[Table 1] The evaluation methods in Table 1 are as follows.

【0029】作業性 塗布性:TABにおいてデバイスホール封止した場合の
塗布状態を目視観察する。
Workability Applicability: The application state when the device hole is sealed in TAB is visually observed.

【0030】充填性:TABにおいてバンプ部への充填
状態を目視観察する。
Fillability: In TAB, the filling state of the bump portion is visually observed.

【0031】観察結果は以下のように表示する。The observation result is displayed as follows.

【0032】 ◎:非常に良好な状態 ○:良好な状態 △:不良な状態 ×:非常に不良な状態 材料特性 α1 :40〜80℃の平均熱膨脹率 吸水率:121℃、湿度100%で100時間放置後の
吸水率 信頼性 T/C:模擬ICを搭載したTAB封止品に−65℃〜
室温〜150℃の熱履歴を1000サイクル与えた後の
パッケージクラックを観察する。
◎: Very good condition ○: Good condition Δ: Poor condition ×: Very bad condition Material properties α 1 : Average thermal expansion coefficient of 40 to 80 ° C. Water absorption rate: 121 ° C., 100% humidity Water absorption rate after leaving for 100 hours Reliability T / C: -65 ° C for TAB sealed product equipped with simulated IC
Package cracks are observed after 1000 cycles of heat history from room temperature to 150 ° C.

【0033】不良数/試験総数(20個) PCT:模擬ICを搭載したCOB封止品を121℃、
湿度100%で1000時間放置後のリーク不良を観察
する。
Number of defects / total number of tests (20) PCT: 121 ° C. for a COB-sealed product equipped with a simulated IC
Observing leak failure after leaving for 1000 hours at 100% humidity.

【0034】不良数/試験総数(20個) D50 :平均粒径を示す。Number of defectives / total number of tests (20) D 50 : Indicates the average particle size.

【0035】[0035]

【発明の効果】以上のように本発明の半導体封止用液状
エポキシ樹脂組成物は、高い充填性を有する均質で熱膨
張率の小さい半導体プラスチック封止を可能にする。ま
た、半導体封止用固形エポキシ樹脂組成物に優る信頼性
により、半導体パッケージの小型化を可能とし、パソコ
ン、VTR等の民生用機器の小型化を可能にする。
INDUSTRIAL APPLICABILITY As described above, the liquid epoxy resin composition for semiconductor encapsulation of the present invention enables homogeneous encapsulation of semiconductor plastic having a high filling property and a small coefficient of thermal expansion. Further, the reliability superior to that of the solid epoxy resin composition for semiconductor encapsulation enables miniaturization of semiconductor packages and miniaturization of consumer devices such as personal computers and VTRs.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 平均粒径が1μm以上15μm未満、粒
度分布において40μm以下の粒径の粒子が90重量%
以上、及び比表面積が10m2 /g以下の非晶質球状シ
リカをエポキシ樹脂、硬化剤及び該非晶質球状シリカの
合計量に対して40重量%以上90重量%未満含むこと
を特徴とする半導体封止用液状エポキシ樹脂組成物。
1. 90% by weight of particles having an average particle size of 1 μm or more and less than 15 μm and a particle size distribution of 40 μm or less.
A semiconductor characterized by containing 40 wt% or more and less than 90 wt% of amorphous spherical silica having a specific surface area of 10 m 2 / g or less with respect to the total amount of the epoxy resin, the curing agent and the amorphous spherical silica. Liquid epoxy resin composition for encapsulation.
JP4180496A 1992-06-16 1992-06-16 Liquid epoxy resin composition for sealing semiconductor Pending JPH065743A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4180496A JPH065743A (en) 1992-06-16 1992-06-16 Liquid epoxy resin composition for sealing semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4180496A JPH065743A (en) 1992-06-16 1992-06-16 Liquid epoxy resin composition for sealing semiconductor

Publications (1)

Publication Number Publication Date
JPH065743A true JPH065743A (en) 1994-01-14

Family

ID=16084265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4180496A Pending JPH065743A (en) 1992-06-16 1992-06-16 Liquid epoxy resin composition for sealing semiconductor

Country Status (1)

Country Link
JP (1) JPH065743A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10120878A (en) * 1996-08-29 1998-05-12 Mitsubishi Electric Corp Epoxy resin composition and semiconductor device
JPH10152599A (en) * 1996-11-21 1998-06-09 Sumitomo Bakelite Co Ltd Epoxy resin composition
JP2003012895A (en) * 2001-06-27 2003-01-15 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2003012773A (en) * 2001-06-27 2003-01-15 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2003234439A (en) * 2002-02-07 2003-08-22 Sony Chem Corp Insulative resin composite
JP2005194502A (en) * 2003-12-12 2005-07-21 Shin Etsu Chem Co Ltd Liquid epoxy resin composition and semiconductor device
JP2006016431A (en) * 2004-06-30 2006-01-19 Shin Etsu Chem Co Ltd Liquid epoxy resin composition for semiconductor sealing and flip chip type semiconductor
JP2015211086A (en) * 2014-04-24 2015-11-24 味の素株式会社 Resin composition for insulator layer of printed wiring board

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10120878A (en) * 1996-08-29 1998-05-12 Mitsubishi Electric Corp Epoxy resin composition and semiconductor device
JPH10152599A (en) * 1996-11-21 1998-06-09 Sumitomo Bakelite Co Ltd Epoxy resin composition
JP2003012895A (en) * 2001-06-27 2003-01-15 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2003012773A (en) * 2001-06-27 2003-01-15 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2003234439A (en) * 2002-02-07 2003-08-22 Sony Chem Corp Insulative resin composite
JP2005194502A (en) * 2003-12-12 2005-07-21 Shin Etsu Chem Co Ltd Liquid epoxy resin composition and semiconductor device
JP4557148B2 (en) * 2003-12-12 2010-10-06 信越化学工業株式会社 Liquid epoxy resin composition and semiconductor device
JP2006016431A (en) * 2004-06-30 2006-01-19 Shin Etsu Chem Co Ltd Liquid epoxy resin composition for semiconductor sealing and flip chip type semiconductor
JP2015211086A (en) * 2014-04-24 2015-11-24 味の素株式会社 Resin composition for insulator layer of printed wiring board

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