JPH0653650A - Multilayer wiring structure body - Google Patents

Abstract

PURPOSE:To prevent corrosion of wiring conductor due to local battery effect generated between different kinds of metals by providing a film formed by particular elements between a metal wiring and a polyimide group insulating film. CONSTITUTION:A first metal wiring layer, a first polyimide group insulating film covering the metal wiring and a second metal wiring connected to the first metal wiring layer through an aperture formed on the polyimide insulating film formed on a substrate are provided as the minimum structuring unit. A film consisting of at least one element selcted from oxide, nitride, carbide, boride, silicide and sulfide is provided between the metal wiring and a plyimide group insulating film formed on the upper surface of the metal wiring. Thereby, corrosion of wiring conductor by local battery effect generated between different kinds of metals (copper and chromium) can be prevented and a problem of safety in the working coming from use of solution including chromium can be solved.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer wiring structure, and more particularly to a high density packaging multilayer wiring structure using a polyimide resin as an interlayer insulating film.

[0002]

2. Description of the Related Art A copper-polyimide multilayer wiring structure using copper as a metal wiring is known as a multilayer wiring structure for high-density mounting using a polyimide resin as an interlayer insulating film (for example, "Nikkei Electronics"). 145-158
P., August 27, 1984 issue). However, there has been a problem that the heat resistance of polyimide is deteriorated when a metal such as copper and nickel is used as a wiring metal (for example, Saiki et al., Proceedings of 1975 National Convention of The Institute of Electronics and Communication Engineers, 37).
8, 380 pages, Miura et al., IEICE Transactions C, vo
J. J71-C No. 11 pp. 1510-1515, November 1988). Therefore, for copper, a method of providing a thin film of chromium at the interface between the polyimide layer and copper is generally adopted. Further, a method of providing a chromate-treated coating on the interface between the polyimide layer and copper has been proposed (JP-A-4-39990).

However, since such a conventional method uses a solution containing chromium in which the wiring conductor is corroded by the cell effect locally generated between different metals (between copper and chromium),
There were some drawbacks such as safety problems in work.

[0004]

SUMMARY OF THE INVENTION It is an object of the present invention to solve such problems and provide a highly reliable multilayer wiring structure.

[0005]

The object of the present invention is as follows.
This is achieved by the following configuration.

(1) A first layer of metal wiring formed on a substrate, a first layer of polyimide-based insulating film that covers the first layer of metal wiring, and a first layer of polyimide-based insulating film. In a multi-layer wiring structure including, as a minimum structural unit, a second-layer metal wiring connected to the first-layer metal wiring through an opening, the polyimide wiring formed on the metal wiring and the upper surface of the metal wiring. A multilayer wiring structure characterized in that a film made of at least one component selected from the group consisting of oxides, nitrides, carbides, borides, silicides and sulfides is provided between the insulating film and the insulating film.

(2) The film described in the item (1) has the following general formula 1
A multilayer wiring structure comprising an oxide represented by:

General formula 1; AnOm (where A is Ti, Al, Y, La, Mg, Ta, V,
Ni, Mn, B, Fe, Zr, Co, Be, Bi, C
e, Dy, Er, Eu, Ga, Gd, Ge, Hf, M
at least one element selected from the group consisting of o, Nb, Pb, Nd, Sb, Sm, Sn, Tb, W and Si, O is oxygen, and n and m are integers of 1 or more) (3) (1) A multilayer wiring structure characterized in that the film as described comprises an oxide represented by the following general formula 2.

General formula 2; XnZmOs (where X is Co, Mg, Cu, Zn, La, Ba, M
n, Fe, Ni, Pb, Sr, Li, Bi, Ca, Cd
And at least one element selected from the group of K, Z is at least one element selected from the group of Al, Co, Fe, Nb, Ti, Ta, Sn, Ta and Zr, O is oxygen, and n, m, (s is an integer of 1 or more) (4) A multilayer wiring structure in which the film according to item (1) is made of nitride.

(5) A multilayer wiring structure characterized in that the film according to item (1) is made of a carbide.

(6) A multilayer wiring structure characterized in that the film according to item (1) is made of boride. (7) A multilayer wiring structure wherein the film according to item (1) is made of silicide. (8) A multilayer wiring structure in which the film according to item (1) is made of sulfide.

As the substrate in the present invention, silicon, aluminum, ceramics, sapphire, etc. are used, but the substrate is not limited to these.

As the metal wiring in the present invention, copper, nickel and / or a copper alloy, a nickel alloy may be used alone or in a multi-layer with an electrically conductive material such as aluminum, gold, chromium, platinum or silver. It is preferably a layer formed in a pattern or entirely so as to fulfill the function. These wirings are usually formed by vacuum vapor deposition, sputtering, plating or the like.

Examples of the oxide in the present invention include oxides represented by the following general formula 1 or general formula 2.

General formula 1; AnOm (where A is Ti, Al, Y, La, Mg, Ta, V,
Ni, Mn, B, Fe, Zr, Co, Be, Bi, C
e, Dy, Er, Eu, Ga, Gd, Ge, Hf, M
at least one element selected from the group consisting of o, Nb, Pb, Nd, Sb, Sm, Sn, Tb, W and Si, O is oxygen, and n and m are integers of 1 or more. General formula 2; XnZmOs (however, X is Co, Mg, Cu, Zn, La, Ba, M
n, Fe, Ni, Pb, Sr, Li, Bi, Ca, Cd
And at least one element selected from the group of K, Z is at least one element selected from the group of Al, Co, Fe, Nb, Ti, Ta, Sn, Ta and Zr, O is oxygen, and n, m, (s is an integer of 1 or more) Specific examples of the oxide represented by the general formula 1 in the present invention include Al
₂ O ₃ , ZrO ₂ , MgO, NiO, TiO ₂ , Ti ₂
O ₃ , MoO ₃ , B ₂ O ₃ , CoO, Y ₂ O ₃ , GeO
₂ , SiO _{2, and the} like, but are not limited to these.

Specific examples of the oxide represented by the general formula 2 in the present invention include BaTiO ₃ and MgAl.
₂ O ₄ , PbTiO ₃ , PbZrO ₃ , SrZrO _{3 and the} like can be mentioned, but the present invention is not limited thereto.

As the nitride in the present invention, a nitride represented by the following general formula 3 can be mentioned.

General formula 3; MnNm (where M is a metal element, silicon or boron, N is nitrogen, and n and m are integers of 1 or more). Specific examples of the nitride in the present invention include silicon nitride and nitride. Examples thereof include, but are not limited to, aluminum, boron nitride, tantalum nitride, titanium nitride, vanadium nitride, zirconium nitride and the like.

Examples of the carbide in the present invention include carbides represented by the following general formula 4.

General formula 4; MnCm (where M is a metal element, silicon or boron, C is carbon, and n and m are integers of 1 or more). Specific examples of the carbide in the present invention include silicon carbide and boron carbide. , Tantalum carbide, titanium carbide, zirconium carbide, niobium carbide, tungsten carbide, chromium carbide, hafnium carbide,
Examples thereof include, but are not limited to, molybdenum carbide and the like.

Examples of the boride in the present invention include boride represented by the following general formula 5.

General formula 5: MnBm (where M is a metallic element, B is boron, and n and m are 1
Specific examples of borides in the present invention include vanadium boride, lanthanum boride, tantalum boride, titanium boride, zirconium boride, tungsten boride, hafnium boride, molybdenum boride and the like. However, the present invention is not limited to these.

As the silicide in the present invention, the silicide represented by the following general formula 6 can be mentioned.

General formula 6; MnSim (where M is a metal element or boron, Si is silicon,
And n and m are integers of 1 or more. Specific examples of the silicide in the present invention include boron silicide, chromium silicide,
Examples thereof include, but are not limited to, vanadium silicide, tantalum silicide, titanium silicide, zirconium silicide, tungsten silicide, hafnium silicide, molybdenum silicide, and niobium silicide.

Examples of the sulfide used in the present invention include sulfides represented by the following general formula 7.

General formula 7: MnSm (where M is a metal element, S is sulfur, and n and m are integers of 1 or more). Specific examples of the sulfide in the present invention include tungsten sulfide, molybdenum sulfide, and niobium sulfide. ,
Examples thereof include, but are not limited to, bismuth sulfide.

Here, the oxide film represented by the general formula 1 or 2 does not mean a film composed only of 100% pure oxide, but mainly contains the oxide represented by the general formulas 1 and 2. Means the membrane. That is, in addition to the compound represented by the above general formula, compounds such as different oxides, nitrides, and carbides may be added. Mainly and
It means that the content is 50 mol% or more. General formula 3 to
The same applies to the nitride, silicide, boride, and sulfide films shown by 7.

As the method for forming the oxide film in the present invention, a known forming method can be used, and examples thereof include a sputtering method, a CVD method, a sol-gel method and an electron beam evaporation method, but a sputtering method and a sol-gel method are preferable. Is the law. Examples of the sol-gel method include a method of forming a thin film by spin coating or dip coating using a solution containing a metal alkoxide compound. This thin film may be heated if necessary. A commercially available SOG solution can be mentioned as an example of the metal alkoxide compound-containing solution. SO here
The G solution is a coating solution for forming a silicon dioxide-based inorganic thin film containing a silicon compound such as silicon alkoxide or silicon hydroxide. For example, OCD-TYPE2 (manufactured by Tokyo Ohka), OCD-TYPE7 (manufactured by Tokyo Ohka), "Atron" NSi-500 (manufactured by Nisso Kasei) and the like can be mentioned. The method using this SOG solution is also excellent in the flattening effect of the wiring.

As the method for forming the nitride film, the carbide film, the boride film, the silicide film and the sulfide film in the present invention, known forming methods can be used, for example, sputtering method, CVD method, electron beam evaporation. Examples of the method include, but the sputtering method is preferable.

Further, before forming the oxide film, the nitride film, the carbide film, the boride film, the silicide film and the sulfide film, the metal wiring is previously treated with an adhesion improving agent or an adhesion improving treatment, and then these films are formed. You may. Examples of the adhesion improver used for the adhesion improver treatment include aminosilane compounds such as aminopropyltriethoxysilane, aluminum chelate compounds, and metal alkoxide compounds. AP-420 as a commercially available adhesion improver
(Manufactured by Toray), VM-651 (manufactured by Du Pont), and the like. As the adhesion improving treatment, for example, a treatment for roughening the surface of the metal wiring by dry etching, wet etching or the like can be mentioned.

The thickness of the oxide film, the nitride film, the carbide film, the boride film, the silicide film, and the sulfide film in the present invention is not particularly limited, but is preferably 10 nm or more, more preferably 50 nm or more. And more preferably 10
It is 0 nm or more.

The polyimide insulating film in the present invention is a combination of tetracarboxylic dianhydride and diamine which are selectively combined with N-methyl-2-pyrrolidone, N,
After reacting in a polar solvent such as N-dimethylacetamide to form a varnish of a polyimide precursor, the varnish of the polyimide precursor is applied onto a substrate and then 200 to 400 ° C.
It can be obtained by performing heat treatment in the range of 1 to dehydration condensation, and known ones can be used. Specific examples include pyromellitic dianhydride and 4,4′-diaminodiphenyl ether, 3,3 ′, 4,4′-benzophenone tetracarboxylic dianhydride and 4,4′-diaminodiphenyl ether, 3,3. ′, 4,4′-Biphenyltetracarboxylic dianhydride and 4,4′-diaminodiphenyl ether, pyromellitic dianhydride and 3,3 ′ (or 4,4 ′)-diaminodiphenyl sulfone, pyromellitic dianhydride Anhydrous and 3,3 ′, 4,4′-benzophenone tetracarboxylic dianhydride and 3,3 ′ (or 4,4
′) -Diaminodiphenyl sulfone, 3,3 ′, 4,4
'-Benzophenonetetracarboxylic dianhydride and 3,3
′ (Or 4,4 ′)-diaminodiphenyl sulfone,
3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride and 3,3 ′ (or 4,4 ′)-diaminodiphenyl sulfone, pyromellitic dianhydride and 4,4′-diaminodiphenyl sulfide, 3,3 ', 4,4'-benzophenone tetracarboxylic dianhydride and 4,4'-diaminodiphenyl sulfide, 3,3', 4,4'-biphenyltetracarboxylic dianhydride and 4,4'- Diaminodiphenyl sulfide, 3,3 ', 4,4'-benzophenone tetracarboxylic dianhydride and paraphenylenediamine, 3,3', 4,4'-biphenyltetracarboxylic dianhydride and paraphenylenediamine, pyromerit Acid dianhydride and 3,3 ′, 4,4′-benzophenone tetracarboxylic acid dianhydride and paraphenylenediamine, pyromellitic dianhydride and 3 , 3 ', 4,4'-biphenyltetracarboxylic dianhydride and paraphenylenediamine, 3,3', 4,4'-diphenylether tetracarboxylic dianhydride and 4,4'-diaminodiphenylether, 3,3 Synthesized from ′, 4,4′-diphenyl ether tetracarboxylic dianhydride and paraphenylenediamine, pyromellitic dianhydride and 4,4′-diaminodiphenyl ether and bis (3-aminopropyl) tetramethyldisiloxane. A varnish of the above polyimide precursor is preferably used.

As the polyimide precursor, those to which photosensitivity is imparted are preferable because they can be directly patterned and the process can be simplified. The method of imparting photosensitivity is described in, for example, JP-B-55-30207 and JP-B-59-52822.
JP-A-53-127723 and the like.

Next, an example of the method for manufacturing the multilayer wiring structure of the present invention will be described.

The wiring of the first layer is formed on a substrate such as a multilayer alumina ceramic including a power source and a ground layer. For the wiring, copper etc. is formed on the substrate by sputtering etc. to about 0.3 μm,
A desired wiring pattern is obtained by performing photo-etching after further forming about 10 μm by electrolytic plating or the like. Next, a film of zirconium oxide or the like is formed on the metal wiring by sputtering or the like.

A polyimide insulating film is formed on this substrate. Normally, because an opening (connection hole) with the upper wiring is provided,
The polyimide insulating film is patterned. Patterning can be done in several ways.

When a polyimide precursor having photosensitivity is used, after coating and drying, a mask is placed on the film of the photosensitive polyimide precursor and ultraviolet rays are irradiated. Then, development is performed. After development, heat treatment is performed to obtain a polyimide insulating film. When a polyimide precursor having no photosensitivity is used, after coating, drying and heat treatment, the polyimide can be etched with oxygen plasma using a metal thin film or silicon dioxide as a mask to form a pattern. Drying is 70-160
It is preferably carried out in the range of ° C. The heat treatment is performed for 5 minutes to 5 hours in a nitrogen atmosphere by selecting a temperature from room temperature to 450 ° C. and gradually raising the temperature or selecting a certain temperature range and continuously raising the temperature. The maximum temperature of this heat treatment is 120-450
C., preferably 130 to 450.degree. C. For example, heat treatment is performed at 130 ° C., 200 ° C., and 400 ° C. for 30 minutes each. Alternatively, the temperature may be linearly raised from room temperature to 400 ° C. over 2 hours.

It is desirable to remove the zirconium oxide film at the opening (connection hole) with the upper wiring by etching the surface with an aqueous solution of ammonium persulfate or by plasma treatment.

Next, the second-layer wiring is formed on the wiring board thus obtained. The wiring is similar to the wiring of the first layer,
A two-layer wiring structure is obtained by forming copper or the like on the substrate to a thickness of about 0.3 μm by sputtering or the like and further forming it to a thickness of about 10 μm by electrolytic plating or the like, and then photoetching.
Similarly, a film of zirconium oxide or the like is formed on the wiring pattern of the second layer by sputtering or the like, a polyimide-based insulating film is further formed thereon, and then a wiring pattern of the third layer is formed to form a three-layer wiring structure. can get.

[0040]

EXAMPLES The present invention will now be described in detail with reference to examples, but the present invention is not limited thereto.

Example 1 and Comparative Example 1 3,3 ', 4,4'-benzophenone tetracarboxylic dianhydride (1 mol), 4,4'-diaminodiphenyl ether (0.95 mol) and bis (3-aminopropyl) )
Tetramethyldisiloxane (0.05 mol) was reacted in an N-methyl-2-pyrrolidone solvent at a concentration of 15% at 50 ° C. for 4 hours to synthesize a polyimide precursor (A).

Copper is sputtered on a silicon substrate to a level of 0.
After forming 3 μm and further forming 5 μm by electroplating, a zirconium oxide film having a film thickness of about 100 nm is formed on half of the substrate by sputtering, and a part where zirconium oxide film is formed (Example 1) and a part not formed (Comparative Example 1)
It was created.

A polyimide precursor (A) was coated on this substrate and dried at 80 ° C. for 60 minutes in a nitrogen atmosphere to give a film thickness of 10 μm.
To form a polyimide precursor coating. The substrate having the polyimide precursor coating formed thereon was dipped in a solvent of N-methyl-2-pyrrolidone to dissolve the polyimide precursor coating, rinsed with 2-propanol, and then blown with nitrogen and dried. Subsequently, the substrate was immersed in a 10% ammonium persulfate aqueous solution for 1 minute, washed with water and dried.

As a result, there was a residual film insoluble in the solvent in the portion where the zirconium oxide film was not formed, and a large resistance value of 10 megaΩ or more was exhibited. Therefore, the reaction between the polyimide precursor and copper obviously occurs at the interface, and a reaction product insoluble in the solvent is generated. On the other hand, there was no residual film in the portion where the zirconium oxide film was formed, and the resistance value was 1Ω or less.

From these results, it is understood that the reaction between the polyimide precursor and copper at the interface can be prevented by forming the zirconium oxide film on copper.

Example 2 and Comparative Example 2 3,3 ', 4,4'-benzophenonetetracarboxylic dianhydride (0.5 mol) and pyromellitic dianhydride (0.5 mol) and 4,4 1 -'- diaminodiphenyl ether (1 mol) was added to N-methyl-2-pyrrolidone as a solvent.
A polyimide precursor (B) was synthesized by reacting at a concentration of 6% at 60 ° C. for 4 hours.

Copper is sputtered on a silicon substrate to a density of 0.
After forming a thickness of 3 μm and further forming a thickness of 5 μm by electrolytic plating, a zirconium oxide film having a thickness of about 100 nm was formed by sputtering.

A polyimide precursor (comparative example 2) was formed on a substrate having a zirconium oxide film formed on copper (Example 2) and a substrate having no zirconium oxide film formed thereon and only being coated with copper (Comparative Example 2). B) is applied and 130 ° C,
Heat treatment was performed at 200 ° C. and 400 ° C. for 30 minutes in a nitrogen atmosphere to form a polyimide insulating film having a thickness of 10 μm. The polyimide insulating film / copper was peeled from the substrate, the polyimide insulating film / copper was etched with a 10% ammonium persulfate aqueous solution, washed with water, and dried at 200 ° C. for 30 minutes to prepare a heat resistance measurement sample.

Further, a sample was prepared by forming a polyimide insulating film having a film thickness of 10 μm on a silicon substrate on which copper is not formed (the heat resistance of polyimide does not decrease on the silicon substrate), and peeling the polyimide insulating film from the substrate. Reference example 1 was used.

The heat resistance of the polyimide was measured using a TGA30 (thermobalance) manufactured by Shimadzu Corporation, and the sample amount was 20 m.
g, in helium, at a heating rate of 10 ° C / min, 5%
The temperature at the time of weight loss was examined to make it heat resistant. The heat resistance of each sample was as follows.

(Example 2: 525 ° C., Comparative example 2: 420)
(° C., Reference Example 1: 525 ° C.) From these results, it is found that the heat resistance of the polyimide does not decrease by forming the zirconium oxide film on copper.

Example 3 and Comparative Example 3 Nickel was sputtered on a silicon substrate to a thickness of 0.5 μm.
Then, a zirconium oxide film having a thickness of about 100 nm was formed by sputtering. The polyimide precursor (B) was applied onto a substrate having a zirconium oxide film formed thereon (Example 3) and a substrate having no zirconium oxide formed thereon (Comparative Example 3) at 130 ° C., 200 ° C. and 400 ° C. Each was heat-treated in a nitrogen atmosphere for 30 minutes to form a polyimide insulating film having a thickness of 10 μm. The polyimide insulating film was peeled from the substrate to prepare a heat resistance measurement sample (Example 3).

The heat resistance of the polyimide was measured by the same method as in Example 2. The heat resistance of each sample was as follows.

(Example 3: 525 ° C., Comparative Example 3: 450
(° C., Reference Example 1: 525 ° C.) From these results, it is understood that the heat resistance of the polyimide is not lowered by forming the zirconium oxide film on nickel.

Example 4, Comparative Example 4 To 348 g of the polyimide precursor (A) of Example 1, a solution of 31 g of dimethylaminoethyl methacrylate and 2.6 g of Michler's ketone in 31 g of N-methyl-2-pyrrolidone was added and mixed. A photosensitive polyimide precursor (C) was synthesized.

Copper was sputtered to a thickness of 0.3 μm on a 99.5% alumina-ceramic substrate and further electroplated.
After forming 10 μm, a wiring pattern was created by photoetching. A zirconium oxide film having a film thickness of about 100 nm was formed on half of the substrate by sputtering, and a portion where the zirconium oxide film was formed (Example 4) and a portion where it was not formed (Comparative Example 4) were prepared.

The photosensitive polyimide precursor (C) was applied onto this substrate and dried at 80 ° C. for 120 minutes in a nitrogen atmosphere to form a photosensitive polyimide precursor film having a film thickness of 20 μm. Using a UV exposure machine PLA-501F manufactured by Canon Inc., 300 mJ / cm ² exposure was performed through a mask. N
-Methyl-2-pyrrolidone was developed by immersion in a developing solution consisting of 70 parts of methanol and 30 parts of methanol while applying ultrasonic waves.
-Rinse with propanol, blow with nitrogen and dry. In this way, openings (via holes) corresponding to the wiring patterns were formed in the photosensitive polyimide precursor film. next,
Heat treatment was carried out at 130 ° C., 200 ° C. and 400 ° C. for 30 minutes in a nitrogen atmosphere to form a polyimide insulating film having a film thickness of 10 μm. In order to remove the oxide film in the via hole portion, the film was etched with a 10% ammonium persulfate aqueous solution for 1 minute, washed with water and dried.

Next, copper was formed by sputtering to a thickness of 0.3 μm and electrolytic plating was further formed to a thickness of 10 μm, followed by photoetching to form a second-layer wiring pattern to obtain a two-layer wiring structure. Next, when the conduction between the first-layer wiring and the second-layer wiring of this two-layer wiring structure was examined, the portion where the zirconium oxide film was formed showed good conduction, but the portion where the zirconium oxide film was not formed. Had poor continuity.

From these results, it can be seen that the multilayer wiring structure of the present invention has excellent connection (conduction) reliability.

Example 5, Comparative Example 5 In the same manner as in Example 1 and Comparative Example 1, except that a barium titanate film was formed instead of the zirconium oxide film as the oxide film, titanic acid was formed on the substrate. A portion where the barium film was formed (Example 5) and a portion where it was not formed (Comparative Example 5) were prepared, and subsequently a polyimide precursor coating was formed. The substrate on which this polyimide precursor coating has been formed is immersed in an N-methyl-2-pyrrolidone solvent to dissolve the polyimide precursor coating, and rinsed with 2-propanol,
It was blown with nitrogen and dried. Subsequently, the substrate was immersed in a 10% ammonium persulfate aqueous solution for 1 minute, washed with water and dried.

As a result, there was a residual film insoluble in the solvent in the portion where the barium titanate film was not formed, and a large resistance value of 10 megaΩ or more was shown. Therefore, the reaction between the polyimide precursor and copper obviously occurs at the interface, and a reaction product insoluble in the solvent is generated. On the other hand, there was no residual film in the portion where the barium titanate film was formed, and the resistance value was 1Ω or less.

From these results, it is understood that the reaction between the polyimide precursor and copper at the interface can be prevented by forming the barium titanate film on copper.

Example 6 A heat resistance measurement sample was prepared and heat resistance was measured in exactly the same manner as in Example 2, except that a barium titanate film was formed instead of the zirconium oxide film as the oxide film. .

As a result, the heat resistance was 525 ° C.

From these results and Comparative Example 2 and Reference Example 1, by forming a barium titanate film on copper,
It can be seen that the heat resistance of the polyimide does not decrease.

Example 7, Comparative Example 6 A two-layer wiring structure was obtained in exactly the same manner as in Example 4 and Comparative Example 4, except that a zirconium nitride film was formed instead of the zirconium oxide film. Next, when the conduction between the first-layer wiring and the second-layer wiring of this two-layer wiring structure was examined, the portion where the zirconium nitride film was formed showed good conduction, but the portion where the zirconium nitride film was not formed. Had poor continuity.

Example 8, Comparative Example 7 A two-layer wiring structure was obtained in exactly the same manner as in Example 4 and Comparative Example 4, except that a zirconium carbide film was formed instead of the zirconium oxide film. Next, when the conduction between the first-layer wiring and the second-layer wiring of this two-layer wiring structure was examined, the portion where the zirconium carbide film was formed showed good conduction, but the portion where the zirconium carbide film was not formed. Had poor continuity.

Example 9, Comparative Example 8 A two-layer wiring structure was obtained in exactly the same manner as in Example 4 and Comparative Example 4, except that a zirconium boride film was formed instead of the zirconium oxide film. Next this 2
When the conduction between the first layer wiring and the second layer wiring of the layer wiring structure was examined, the conduction was good in the portion where the zirconium boride film was formed, but the conduction was observed in the portion where the zirconium boride film was not formed. Was bad.

Example 10, Comparative Example 9 A two-layer wiring structure was obtained in exactly the same manner as in Example 4 and Comparative Example 4, except that a zirconium silicide film was formed instead of the zirconium oxide film. Next this 2
When the conduction between the first-layer wiring and the second-layer wiring of the layer wiring structure was examined, the conduction was good in the portion where the zirconium silicide film was formed, but the conduction was observed in the portion where the zirconium silicide film was not formed. Was bad.

Example 11, Comparative Example 10 A two-layer wiring structure was obtained in exactly the same manner as in Example 4 and Comparative Example 4, except that a molybdenum sulfide film was formed instead of the zirconium oxide film. Next, when the conduction between the first-layer wiring and the second-layer wiring of this two-layer wiring structure was examined, the conduction was good at the portion where the molybdenum sulfide film was formed, but the portion where the molybdenum sulfide film was not formed. Had poor continuity.

Example 12, Comparative Example 11 In Example 4 and Comparative Example 4, instead of forming the zirconium oxide film by sputtering, OCD-TY was used.
A two-layer wiring structure was obtained in exactly the same manner, except that PE7 (manufactured by Tokyo Ohka) was used to form a 1.5 μm silicon dioxide film. Next, when the conduction between the first-layer wiring and the second-layer wiring of this two-layer wiring structure was examined, the portion where the silicon dioxide film was formed showed good conduction, but the portion where the silicon dioxide film was not formed Had poor continuity.

Example 13, Comparative Example 12 In Example 4 and Comparative Example 4, half of the substrate was formed with A before forming the zirconium oxide film by sputtering.
After applying P-420 (manufactured by Toray), a two-layer wiring structure was obtained in exactly the same manner except that a zirconium oxide film was formed on half of the applied substrate by sputtering.
Next, when the conduction between the first-layer wiring and the second-layer wiring of this two-layer wiring structure was examined, the portion where the zirconium oxide film was formed showed good conduction, but the portion where the zirconium oxide film was not formed. Had poor continuity.

Claims (13)

[Claims] 1. A first layer of metal wiring formed on a substrate, and a first layer of polyimide-based insulating film covering the first layer of metal wiring,
A multi-layer wiring structure comprising, as a minimum structural unit, a second-layer metal wiring connected to the first-layer metal wiring through an opening formed in the first-layer polyimide-based insulating film. And a film made of at least one component selected from the group consisting of oxides, nitrides, carbides, borides, silicides and sulfides between the polyimide insulating film formed on the upper surface of the metal wiring. A multilayer wiring structure characterized by the above. 2. A multilayer wiring structure, wherein the film according to claim 1 comprises an oxide represented by the following general formula 1. General formula 1; AnOm (where A is Ti, Al, Y, La, Mg, Ta, V,
Ni, Mn, B, Fe, Zr, Co, Be, Bi, C
e, Dy, Er, Eu, Ga, Gd, Ge, Hf, M
at least one element selected from the group consisting of o, Nb, Pb, Nd, Sb, Sm, Sn, Tb, W and Si, O is oxygen, and n and m are integers of 1 or more) 3. A multilayer wiring structure wherein the film according to claim 1 is composed of an oxide represented by the following general formula 2. General formula 2; XnZmOs (where X is Co, Mg, Cu, Zn, La, Ba, M
n, Fe, Ni, Pb, Sr, Li, Bi, Ca, Cd
And at least one element selected from the group of K, Z is at least one element selected from the group of Al, Co, Fe, Nb, Ti, Ta, Sn, Ta and Zr, O is oxygen, and n, m, (s is an integer of 1 or more) 4. A multilayer wiring structure wherein the film according to claim 1 is made of nitride. 5. The nitride is silicon nitride, aluminum nitride,
The multilayer wiring structure according to claim 4, which is at least one nitride selected from the group consisting of boron nitride, tantalum nitride, titanium nitride, vanadium nitride, and zirconium nitride. 6. A multilayer wiring structure characterized in that the film according to claim 1 is made of a carbide. 7. The carbide is silicon carbide, boron carbide, tantalum carbide, titanium carbide, zirconium carbide, niobium carbide,
7. The multilayer wiring structure according to claim 6, which is at least one carbide selected from the group consisting of tungsten carbide, chromium carbide, hafnium carbide and molybdenum carbide. 8. A multilayer wiring structure, wherein the film according to claim 1 is made of boride. 9. The boride is at least one boride selected from the group consisting of vanadium boride, lanthanum boride, tantalum boride, titanium boride, zirconium boride, tungsten boride, hafnium boride and molybdenum boride. The multilayer wiring structure according to claim 8, wherein the multilayer wiring structure is provided. 10. A multilayer wiring structure wherein the film according to claim 1 is made of silicide. 11. A silicide is selected from the group consisting of boron silicide, chromium silicide, vanadium silicide, tantalum silicide, titanium silicide, zirconium silicide, tungsten silicide, hafnium silicide, molybdenum silicide and niobium silicide. The multilayer wiring structure according to claim 10, which is at least one silicide selected. 12. A multilayer wiring structure wherein the film according to claim 1 is made of sulfide. 13. The multilayer wiring structure according to claim 12, wherein the sulfide is at least one sulfide selected from the group consisting of tungsten sulfide, molybdenum sulfide, niobium sulfide and bismuth sulfide.