JPH0645692A - Semiconductor laser - Google Patents

Abstract

PURPOSE:To provide a semiconductor laser having a small irregularity in a light receiving amount of a light irradiated from a semiconductor laser element to a photoreceiving element. CONSTITUTION:An element group 14 has a lead 1 having positioning means, a photoreceiving element 9, and a semiconductor laser element 13 placed directly on the lead 1 disposed on the element 9 or in front of the element 9 or through a submount and having a forward main irradiating surface. A transparent resin 22 covering the vicinity of the rear surface of the element 13 to a photoreceiving surface 12 of the element 9 is provided. The group 14 is placed at the opposite side to a punched flash direction of the lead 1, at its front surface at the rear of a front flash part 7 of the lead, and at the rear surface front of the flash 7 of the rear of the lead 1.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device which can easily secure a stable optical output monitor current.

[0002]

2. Description of the Related Art In recent years, many improvements have been made to semiconductor laser devices.
A semiconductor laser device filed in No. 138696 is shown in FIG. In this figure, the light receiving element 42 is mounted on the lead 41, and the semiconductor laser element 43 is mounted thereon. The transparent resin 45 covers the rear surface of the semiconductor laser element 43 and the P-type diffusion region 44 of the light receiving element 42. An electrode 46 is provided in ohmic contact with the P type diffusion region 44. The other lead 47 is provided separately from the lead 41.

[0003]

However, the above-mentioned semiconductor laser device has a drawback that the amount of light received by the P-type diffusion region 44 varies. The inventor of the present invention has investigated the cause, and since the light receiving element 42 is mounted in the punching burr direction of the lead 41, the main emission light of the semiconductor laser element 43 interferes with the front burr portion 48 and the scattered light Was partially contained in the P-type diffusion region 44. Therefore, the present invention has been made in view of the above conventional drawbacks, and provides a semiconductor laser device in which the light emitted from the front surface of the semiconductor laser element is prevented from entering the P-type diffusion region and the variation in the amount of received light is small. To do.

[0004]

In order to solve the above problems, the present invention is directed to a lead having a positioning means, a light receiving element mounted on the lead, and a light receiving element located on or in front of the light receiving element. An element group including a semiconductor laser element mounted directly on a lead or via a submount and having a main emission surface in the front is provided. A transparent resin covering the vicinity of the rear surface of the semiconductor laser element to the light receiving surface of the light receiving element is provided. The element group is mounted on the side opposite to the punching burr direction of the lead, the front surface of the element group is behind the front burr portion of the lead, and the rear surface of the element group is forward of the rear burr portion of the lead. Like this.

[0005]

As described above, according to the present invention, since the element group including the semiconductor laser element is mounted on the side opposite to the burr direction of the lead, the light emitted from the front of the semiconductor laser element interferes with the burr in the front of the lead. Not done. Therefore, the light received on the light receiving surface is only the light emitted from the rear surface of the semiconductor laser element, and the amount of light received is stable.

[0006]

Embodiments of the present invention will be described below with reference to FIGS. 1 is a sectional view of a semiconductor laser device according to the present embodiment, and FIG. 2 is a sectional view taken along the line AA of FIG. In these figures, the lead 1 is made of a metal material such as copper having a thickness of 0.2 to 1.0 mm and is composed of a rectangular portion 2, a notch portion 3 and a terminal portion 4. The lead 1 has a positioning means 6 such as a V-shaped groove formed on the end face 5. In addition, the positioning means 6 may be a U-shaped groove, a concave portion having a substantially U-shaped cross section, or a convex portion having a V-shaped, U-shaped, or substantially U-shaped cross section. . The lead 1 is punched by press working, and for example, like the front burr portion 7 and the rear burr portion 8, the outer line has a burr by punching.

The light receiving element 9 is, for example, a silicon crystal having a P-I-N structure provided with a front surface electrode 10 and a back surface electrode 11. The surface electrode 10 is formed in ohmic contact with the light receiving surface 12 formed of a P type diffusion region.
The light receiving element 9 is fixed on the lead 1 via a conductive adhesive such as silver paste.

The semiconductor laser device 13 is made of, for example, a GaAlAs light emitting layer composed of an active layer and a clad layer sandwiching the active layer. Both ends of the semiconductor laser element 13 are cleaved and a reflective film is formed on the cleaved surface. Semiconductor laser device 1
The back surface electrode of the semiconductor laser element 13 is fixed onto the light receiving element 9 via silver paste or solder so that the main emission surface of the semiconductor laser element 3 is located forward. The semiconductor laser element 13 is formed so that the reflectance of the reflecting film on the rear surface is higher than that on the front surface so that the secondary emission for monitoring is performed rearward. As described above, the light receiving element 9 and the semiconductor laser element 13 mounted thereon constitute the element group 14.

The element group 14 is placed in a direction opposite to the punching burr direction of the lead 1, and the front surface 15 of the element group 14, that is, the front surface of the light receiving element 9 is arranged rearward of the front burr portion 7 of the lead 1. There is. The rear surface 16 of the element group 14 is arranged in front of the burr portion 8 behind the lead 1.

The other leads 17 and 18 are made of a metal material such as copper, are located in the notch 3 of the lead 1, and extend in the direction opposite to the main emission direction of the semiconductor laser device 13. The first and second thin metal wires 19 and 20 are both made of gold or the like, and connect between the semiconductor laser element 13 and the other lead 17, and between the surface electrode 10 of the light receiving element 9 and the other lead 18, respectively. Is wired like. The optical axis center line 21 is a line connecting the front surface and the rear surface of the semiconductor laser device 13, and indicates the traveling direction of the emitted beam. The first and second thin metal wires 19 and 20 are arranged in a substantially V-shaped distribution to the left and right with respect to the optical axis center line 21 of the semiconductor laser device 13.

The translucent resin 22 is made of, for example, an epoxy resin, and the light receiving element 9 is provided in the vicinity of the rear surface of the semiconductor laser element 13.
Is formed so as to integrally cover the light receiving surface 12 of. The insulating frame 23 is made of, for example, a polycarbonate resin or an epoxy resin, and has a substantially U-shape in plan view so as to expose the emitting surface of the semiconductor laser element 13, and the front and back surfaces of the lead 1 and the other leads 17 and 18 are formed. It is formed by transfer molding so as to sandwich it. The semiconductor laser device 24 is composed of these components.

The semiconductor laser device 24 is fixed to the supporting member 25 so that the convex portion or the concave portion formed on the supporting member 25 and the positioning means 6 formed on the end face 5 of the lead 1, that is, the concave portion or the convex portion are fitted to each other. Has been done. Optical components 26 such as a diffraction grating, a half mirror, and an objective lens are provided in the main emission direction of the semiconductor laser device 13.

Next, a second embodiment in which the temperature rise of the light receiving element is smaller than that in the first embodiment will be described with reference to FIG. FIG. 3 is a sectional view of the semiconductor laser device according to the present embodiment.
In this figure, the light receiving element 27 is, for example, a silicon crystal having a P-I-N structure provided with a front electrode 28 and a back electrode 29. The surface electrode 28 is formed in ohmic contact with the light receiving surface 30 formed of a P type diffusion region. The light receiving element 27 is fixed on the lead 1 via a conductive adhesive such as silver paste.

The submount 31 is made of, for example, silicon and is provided with a front surface electrode 32 and a back surface electrode 33, and is fixed on the lead 1 by silver paste or the like.
A material having good conductivity may be selected for the submount 31.

The semiconductor laser element 13 is fixed by alloying the front surface electrode 32 of the submount 31 and the back surface electrode 33 of the semiconductor laser element 13 so that the main emission surface is located at the front. As described above, the light receiving element 27, the submount 31 placed on the lead 1 in front of the light receiving element 27, and the semiconductor laser element 13 placed on the submount 31 make up the element group 34.
Is configured.

The element group 34 is mounted in the direction opposite to the punching burr direction of the lead 1, and the front surface 35 of the element group 34, that is, the front surface of the submount 31 is the burr portion 7 in front of the lead 1.
It is located behind. The rear surface 36 of the element group 34,
That is, the rear surface of the light receiving element 27 is arranged in front of the burr portion 8 behind the lead 1.

The numbers in FIG. 3 and those in FIGS. 1 and 2 indicate the same parts. The semiconductor laser device 37 is configured by these components. In this semiconductor laser device 37, since the semiconductor laser element and the light receiving element are arranged apart from each other, the temperature rise of the light receiving element due to the temperature rise of the semiconductor laser element is small.

Further, although the semiconductor laser device 13 is mounted via the submount 31 in the above-mentioned second embodiment, the semiconductor laser device 13 may be directly mounted on the lead 1 in addition. . If the semiconductor laser element 13 is placed directly, the heat radiation of the semiconductor laser element 13 is improved and the temperature rise is suppressed, so that the life is extended.

[0019]

As described above, according to the present invention, since the element group including the semiconductor laser element and the like is mounted on the side opposite to the burr direction of the lead, the light emitted from the front side of the semiconductor laser element is formed on the front side of the lead. Is not interfered with. Therefore, the light received on the light receiving surface is only the light emitted from the rear surface of the semiconductor laser element, and the amount of light received is stable. Therefore, since the monitor current is also stable, the output control to the semiconductor element becomes accurate.

Further, according to the present invention, the element group can be placed on the lead closely without any gap by separating the front surface and the rear surface of the element group from the burrs of the leads. Therefore, since the heat dissipation of the element group is good, the temperature rise of the semiconductor laser element is suppressed and the life of the semiconductor laser element is extended. Further, since the temperature rise of the light receiving element is suppressed, the light receiving characteristic (monitor current value with respect to the amount of received light) of the light receiving element is stabilized, and the monitor current is further stabilized.

Further, according to the present invention, the positioning means provided on the lead of the semiconductor laser device and the convex portion or the concave portion of the supporting member are fitted to each other to prevent the semiconductor laser device from being displaced and the relative position between the emitted beam and the optical component. Can be held accurately.

[Brief description of drawings]

FIG. 1 is a sectional view of a semiconductor laser device according to a first embodiment of the present invention.

FIG. 2 is a sectional view taken along line AA of FIG.

FIG. 3 is a sectional view of a semiconductor laser device according to a second embodiment of the present invention.

FIG. 4 is a sectional view of a conventional semiconductor laser.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Lead 6 Positioning means 7 Front burr part 8 Rear burr part 9, 27 Light receiving element 12, 30 Light receiving surface 13 Semiconductor laser element 14, 34 Element group 15, 35 Element group front surface 16, 36 Element group rear surface 22 Transparent Light-sensitive resin 31 submount

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kimihide Mizuguchi 2-18 Keihan Hon-dori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. Incorporated (72) Inventor Keiichi Yoshinari 2-18 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd.

Claims (1)

[Claims] 1. A lead having a positioning means, a light receiving element placed on the lead, and a light receiving element placed on the light receiving element or in front of the light receiving element directly or via a submount. And a translucent resin covering from near the rear surface of the semiconductor laser element to the light receiving surface of the light receiving element, the element group including the lead Is placed on the side opposite to the punching burr direction, the front surface of the element group is behind the front burr portion of the lead, and the rear surface of the element group is forward of the rear burr portion of the lead. A semiconductor laser device.