JP3723424B2 - Laser equipment - Google Patents

Laser equipment Download PDF

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Publication number
JP3723424B2
JP3723424B2 JP2000216162A JP2000216162A JP3723424B2 JP 3723424 B2 JP3723424 B2 JP 3723424B2 JP 2000216162 A JP2000216162 A JP 2000216162A JP 2000216162 A JP2000216162 A JP 2000216162A JP 3723424 B2 JP3723424 B2 JP 3723424B2
Authority
JP
Japan
Prior art keywords
lead
laser element
laser
resin frame
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000216162A
Other languages
Japanese (ja)
Other versions
JP2002033544A (en
Inventor
泰弘 渡部
靖之 別所
正治 本多
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2000216162A priority Critical patent/JP3723424B2/en
Application filed by Tottori Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tottori Sanyo Electric Co Ltd
Priority to EP01943807A priority patent/EP1313184B1/en
Priority to DE60129991T priority patent/DE60129991T2/en
Priority to KR1020037000719A priority patent/KR100542336B1/en
Priority to PCT/JP2001/005340 priority patent/WO2002007275A1/en
Priority to CNB018129641A priority patent/CN1258252C/en
Priority to US10/333,072 priority patent/US6885076B2/en
Publication of JP2002033544A publication Critical patent/JP2002033544A/en
Priority to HK04100396A priority patent/HK1057654A1/en
Application granted granted Critical
Publication of JP3723424B2 publication Critical patent/JP3723424B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【0001】
【発明の属する技術分野】
本発明はレーザ装置に関する。
【0002】
【従来の技術】
従来、この種の装置は、例えば特開平6−45703号公報に示されている。この公報によると、リードと、リードに設けられたレーザ素子と、レーザ素子を保護する樹脂枠が示されている。そして、リードの上辺の1部と、両側面とが、リードの取付け基準部として設定されている。
【0003】
【発明が解決しようとする課題】
しかし上記装置では、取付け基準部とされるリードの上辺の1部に、樹脂漏れを生じ、取付け基準部が不正確となる第1の欠点が有る。本発明者がその原因を究明したところ、樹脂枠の外形がリードの上辺よりも外側に位置しているので、プレス時に生じたリードの抜きだれに樹脂が溜るためである事が分った。
【0004】
また上記装置では、レーザ光がリードの表面で反射しない様に、リードの先端にレーザ素子を配置している。そのために、このレーザ装置を取扱う時に、レーザ素子に指やピンセット等が接触し易い第2の欠点が有る。そこで、本発明はこの様な従来の欠点を考慮し、樹脂漏れを生じにくい、かつレーザ素子に指などが接触しにくいレーザ装置を提供する。
【0005】
【課題を解決するための手段】
上記課題を解決するために、請求項1の本発明では、リードと、前記リードに設けられたレーザ素子と、前記レーザ素子を保護する樹脂枠とを備え、前記樹脂枠の外形が、前記リードの取付け基準となる基準部より内側に位置する様に構成したレーザ装置であって、前記リードのレーザ素子取付け部前方は切欠部が形成され、前記切欠部の隣に突出部が設けられ、前記突出部は、前記リードの先端の基準部が定める面よりレーザ光出射方向に突出しており、前記樹脂枠の外形は、前記突出部の先端より内側に設けられた事を特徴とする
【0010】
【発明の実施の形態】
以下に、図1ないし図3に従い、本発明の実施の形態に係るレーザ装置1を説明する。図1はレーザ装置1の正面図、図2はレーザ装置1の平面図、図3は図1のA1A2断面図である。これらの図に於て、リード2は例えば、メッキ処理された銅等の金属材料から成り、厚みが例えば0.2〜1.0mmである。
【0011】
リード2は正面から見れば(図1参照)、略T字状に形成されている。リード2は、端子部3と、基部4と、突出部5、6と、切欠部7等により、構成されている。
【0012】
端子部3は平面から見れば、略長方形状のものである。基部4は端子部3につながって形成され、外形が略長方形(部分的に切欠きが有る)状のものである。
【0013】
基部4の外形に於て、縦方向(Y方向)に沿って、基準部8、9が形成され、横方向(X方向)に沿って、基準部10、11が形成されている。レーザ装置1が取付けられる相手側部品(図示せず)の内面に、上記基準部8、9、10、11が当接する事により、レーザ装置1は相手側部品に、正確な位置にて位置決めされる。上記理由により、基準部8、9、10、11は、リード2の取付け基準となる。
【0014】
基準部10、11に各々隣接して突出部5、6が形成され、突出部5、6の間に、切欠部7が形成されている。突出部5、6は基準部10、11に対し、縦方向(Y方向)の上側に突出したものである。即ち、突出部5、6は基準部10、11より外側(後述のレーザ素子から遠い側)に設けられている。
【0015】
この様に、リード2のレーザ素子(後述)の取付け部前方には、切欠部7が形成され、切欠部7の両隣に、突出部5、6が形成されている。また、リード2の基部4の適所には、貫通孔12、13が形成されている。
【0016】
受光素子16は例えばP−I−N構造から成るシリコン系結晶に、表面電極17、18と、裏面電極(図示せず)が設けられたものである。表面電極18は、P型拡散領域から成る受光部19とオーミック接触して形成されている。受光素子16の裏面電極は、銀ペースト等の導電性接着剤を介して、リード2の基部4上に固着されている。
【0017】
レーザ素子20は例えば、活性層とそれを挟むクラッド層から成るGaAlAs層からできている。レーザ素子20は、前方(A1方向)に、主出射面が位置する様に、レーザ素子20の裏面電極(図示せず)が、受光素子16の表面電極17上に、銀ペースト等を介して固着されている。この様に、レーザ素子20はリード2上に設けられている。
【0018】
レーザ素子20は、後方にモニター用の副出射が行われる様に、後面の反射膜の反射率が、前面のそれよりも高い様に形成されている。
【0019】
他のリード14、15は共に、例えば、メッキが施こされた銅等の金属材料から成る。他のリード14、15は、リード2の端子部3に隣接した位置に配置されている。
【0020】
金属細線21は金等から成り、レーザ素子20の表面電極と、リード2の基部4との間を結ぶ様に配線されている。金属細線22は金等から成り、受光素子16の表面電極17と、他のリード14との間を結ぶ様に配線されている。金属細線23は金等から成り、受光素子16の表面電極18と、他のリード15との間を結ぶ様に配線されている。
【0021】
樹脂枠24は例えば、ポリカーボネート樹脂又はエポキシ樹脂等から成る。樹脂枠24は、レーザ素子20の出射面を露出する様に、例えば平面から見て、略コ字状に、かつ、リード2と、他のリード14、15の各表面と各裏面を挟む様に、トランスファーモールドによって形成されている。
【0022】
この様に、樹脂枠24は、レーザ素子20を保護するものである。また、樹脂枠24は、リード2の基部4に形成された貫通孔12、13を介して、リード2の表面上の部分25と、リード2の裏面上の部分26がつながる様に、形成されている。
【0023】
樹脂枠24の外形27はリード2の先端より内側(レーザ素子20に近い側)に位置する様に、即ち、リード2の突出部5、6より内側に位置する様に、設けられている。また、樹脂枠24の外形28、29は、リード2の両側より内側(レーザ素子20に近い側)に位置する様に、設けられている。
【0024】
即ち、樹脂枠24の外形27、28、29は、リード2の取付け基準となる基準部8、9、10、11より内側(レーザ素子20に近い側)に位置する様に、設けられている。この様に構成する事により、樹脂枠24を成型した時に、基準部8、9、10、11に於ける、プレス時に生じたリード2の抜きだれ(打抜き加工時に、打抜きバリの反対側に生じる断面が少し曲面になる事)による、樹脂漏れを、防止する事ができる。
【0025】
レーザ素子20の主出射面を露出する様に(即ち、主出射光の邪魔にならない様に)、樹脂枠の前方には、窓部31が設けられている。以上の部品により、レーザ装置1が構成されている。
【0026】
上述の様に、レーザ素子20は受光素子16上に載置されているが、レーザ素子20は受光素子16の前方のリード2上に直接、又はサブマウントを介して載置されても良い。
【0027】
【発明の効果】
本発明によれば、前記突出部は前記基準部より外側に設けられ、前記樹脂枠の外形は、前記突出部の先端より内側に設けられる構成とする。この様に、樹脂枠の外形を、突出部の先端より内側に位置させる事により、上記先端に於ける、プレス時に生じたリードの抜きだれによる、樹脂枠に於ける樹脂漏れを防止できる
【図面の簡単な説明】
【図1】本発明の実施の形態に係るレーザ装置1の正面図である。
【図2】上記レーザ装置1の平面図である。
【図3】図1のA1A2断面図である。
【符号の説明】
2 リード
20 レーザ素子
24 樹脂枠
27、28、29 樹脂枠24の外形
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a laser apparatus.
[0002]
[Prior art]
Conventionally, this type of apparatus is disclosed in, for example, Japanese Patent Laid-Open No. 6-45703. According to this publication, a lead, a laser element provided on the lead, and a resin frame for protecting the laser element are shown. One part of the upper side of the lead and both side surfaces are set as the lead attachment reference part.
[0003]
[Problems to be solved by the invention]
However, in the above apparatus, there is a first drawback that a resin leak occurs in one part of the upper side of the lead, which is the attachment reference part, and the attachment reference part becomes inaccurate. As a result of investigating the cause, the present inventor found that the resin frame is located outside the upper side of the lead, so that the resin accumulates in the lead extraction generated during pressing.
[0004]
In the above apparatus, a laser element is disposed at the tip of the lead so that the laser beam is not reflected on the surface of the lead. Therefore, when handling this laser apparatus, there is a second drawback that a finger, tweezers, etc. are likely to come into contact with the laser element. Accordingly, the present invention provides a laser device that takes into account such conventional drawbacks and is unlikely to cause resin leakage and to prevent a finger or the like from coming into contact with the laser element.
[0005]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, in the present invention of claim 1, a lead, a laser element provided on the lead, and a resin frame that protects the laser element are provided, and the outer shape of the resin frame is the lead. The laser device is configured to be positioned inside a reference portion serving as an attachment reference for the lead, wherein a notch portion is formed in front of the laser element attachment portion of the lead, and a protrusion is provided next to the notch portion, The protruding portion protrudes in a laser beam emitting direction from a surface defined by a reference portion at the tip of the lead, and the outer shape of the resin frame is provided on the inner side of the tip of the protruding portion .
[0010]
DETAILED DESCRIPTION OF THE INVENTION
A laser apparatus 1 according to an embodiment of the present invention will be described below with reference to FIGS. 1 is a front view of the laser device 1, FIG. 2 is a plan view of the laser device 1, and FIG. 3 is a cross-sectional view taken along line A1A2 of FIG. In these figures, the lead 2 is made of, for example, a plated metal material such as copper and has a thickness of 0.2 to 1.0 mm, for example.
[0011]
The lead 2 is formed in a substantially T shape when viewed from the front (see FIG. 1). The lead 2 includes a terminal portion 3, a base portion 4, projecting portions 5 and 6, a cutout portion 7 and the like.
[0012]
The terminal portion 3 has a substantially rectangular shape when viewed from the plane. The base portion 4 is formed to be connected to the terminal portion 3 and has a substantially rectangular shape (partially cutout).
[0013]
In the outer shape of the base portion 4, reference portions 8 and 9 are formed along the vertical direction (Y direction), and reference portions 10 and 11 are formed along the horizontal direction (X direction). When the reference portions 8, 9, 10, 11 are brought into contact with the inner surface of a counterpart component (not shown) to which the laser device 1 is attached, the laser device 1 is positioned at an accurate position on the counterpart component. The For the above reasons, the reference portions 8, 9, 10, and 11 serve as attachment standards for the leads 2.
[0014]
Protruding portions 5 and 6 are formed adjacent to the reference portions 10 and 11, and a notch 7 is formed between the protruding portions 5 and 6. The protrusions 5 and 6 protrude from the reference parts 10 and 11 in the vertical direction (Y direction). That is, the protrusions 5 and 6 are provided outside the reference portions 10 and 11 (on the side far from a laser element described later).
[0015]
In this way, the notch 7 is formed in front of the attachment portion of the laser element (described later) of the lead 2, and the protrusions 5 and 6 are formed on both sides of the notch 7. Further, through holes 12 and 13 are formed at appropriate positions of the base 4 of the lead 2.
[0016]
The light receiving element 16 is formed by providing front surface electrodes 17 and 18 and a back surface electrode (not shown) on a silicon-based crystal having a PIN structure, for example. The surface electrode 18 is formed in ohmic contact with the light receiving portion 19 formed of a P-type diffusion region. The back electrode of the light receiving element 16 is fixed on the base 4 of the lead 2 via a conductive adhesive such as silver paste.
[0017]
The laser element 20 is made of, for example, a GaAlAs layer including an active layer and a clad layer sandwiching the active layer. The laser element 20 has a back electrode (not shown) of the laser element 20 on the front electrode 17 of the light receiving element 16 via silver paste or the like so that the main emission surface is located in the front (A1 direction). It is fixed. Thus, the laser element 20 is provided on the lead 2.
[0018]
The laser element 20 is formed so that the reflectance of the reflective film on the rear surface is higher than that on the front surface so that the secondary emission for monitoring is performed rearward.
[0019]
The other leads 14 and 15 are both made of, for example, a metal material such as plated copper. The other leads 14 and 15 are arranged at positions adjacent to the terminal portion 3 of the lead 2.
[0020]
The fine metal wire 21 is made of gold or the like and wired so as to connect the surface electrode of the laser element 20 and the base 4 of the lead 2. The fine metal wire 22 is made of gold or the like, and is wired so as to connect the surface electrode 17 of the light receiving element 16 and the other lead 14. The fine metal wires 23 are made of gold or the like, and are wired so as to connect the surface electrode 18 of the light receiving element 16 and the other leads 15.
[0021]
The resin frame 24 is made of, for example, polycarbonate resin or epoxy resin. The resin frame 24 has, for example, a substantially U-shape when viewed from the top so as to expose the emission surface of the laser element 20 and sandwiches the front and back surfaces of the lead 2 and the other leads 14 and 15. In addition, it is formed by transfer molding.
[0022]
Thus, the resin frame 24 protects the laser element 20. The resin frame 24 is formed so that the portion 25 on the surface of the lead 2 and the portion 26 on the back surface of the lead 2 are connected via the through holes 12 and 13 formed in the base portion 4 of the lead 2. ing.
[0023]
The outer shape 27 of the resin frame 24 is provided so as to be located on the inner side (side closer to the laser element 20) than the tip of the lead 2, that is, located on the inner side of the protruding portions 5 and 6 of the lead 2. Further, the outer shapes 28 and 29 of the resin frame 24 are provided so as to be located on the inner side (side closer to the laser element 20) than both sides of the lead 2.
[0024]
In other words, the outer shapes 27, 28, and 29 of the resin frame 24 are provided so as to be located on the inner side (side closer to the laser element 20) than the reference portions 8, 9, 10, and 11 that serve as the attachment reference of the lead 2. . By configuring in this way, when the resin frame 24 is molded, the lead 2 is removed in the reference portions 8, 9, 10, 11 (which occurs on the opposite side of the punching burr during the punching process). It is possible to prevent resin leakage due to a slightly curved cross section.
[0025]
A window 31 is provided in front of the resin frame so as to expose the main emission surface of the laser element 20 (that is, not to obstruct the main emission light). The laser device 1 is configured by the above components.
[0026]
As described above, the laser element 20 is mounted on the light receiving element 16, but the laser element 20 may be mounted directly on the lead 2 in front of the light receiving element 16 or via a submount.
[0027]
【The invention's effect】
According to the present invention, the protruding portion is provided outside the reference portion, and the outer shape of the resin frame is provided inside the tip of the protruding portion. As described above, by positioning the outer shape of the resin frame inside the tip of the protruding portion, it is possible to prevent the resin leak in the resin frame due to the lead being pulled out at the tip .
[Brief description of the drawings]
FIG. 1 is a front view of a laser apparatus 1 according to an embodiment of the present invention.
FIG. 2 is a plan view of the laser device 1;
FIG. 3 is a cross-sectional view taken along the line A1A2 of FIG.
[Explanation of symbols]
2 Lead 20 Laser element 24 Resin frame 27, 28, 29 Outline of resin frame 24

Claims (1)

リードと、前記リードに設けられたレーザ素子と、前記レーザ素子を保護する樹脂枠とを備え、前記樹脂枠の外形が、前記リードの取付け基準となる基準部より内側に位置する様に構成したレーザ装置であって、前記リードのレーザ素子取付け部前方は切欠部が形成され、前記切欠部の隣に突出部が設けられ、前記突出部は、前記リードの先端の基準部が定める面よりレーザ光出射方向に突出しており、前記樹脂枠の外形は、前記突出部の先端より内側に設けられた事を特徴とするレーザ装置。A lead, a laser element provided on the lead, and a resin frame that protects the laser element are configured such that the outer shape of the resin frame is located inside a reference portion that is a reference for mounting the lead . In the laser device, a notch is formed in front of the laser element mounting portion of the lead, and a protrusion is provided next to the notch. The protrusion is a laser from a surface defined by a reference portion at the tip of the lead. A laser device that protrudes in a light emitting direction, and an outer shape of the resin frame is provided inside a tip of the protruding portion .
JP2000216162A 2000-07-17 2000-07-17 Laser equipment Expired - Lifetime JP3723424B2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2000216162A JP3723424B2 (en) 2000-07-17 2000-07-17 Laser equipment
DE60129991T DE60129991T2 (en) 2000-07-17 2001-06-21 SEMICONDUCTOR LASER DEVICE
KR1020037000719A KR100542336B1 (en) 2000-07-17 2001-06-21 Semiconductor laser device
PCT/JP2001/005340 WO2002007275A1 (en) 2000-07-17 2001-06-21 Semiconductor laser device
EP01943807A EP1313184B1 (en) 2000-07-17 2001-06-21 Semiconductor laser device
CNB018129641A CN1258252C (en) 2000-07-17 2001-06-21 Semiconductor laser device
US10/333,072 US6885076B2 (en) 2000-07-17 2001-06-21 Semiconductor laser device
HK04100396A HK1057654A1 (en) 2000-07-17 2004-01-19 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000216162A JP3723424B2 (en) 2000-07-17 2000-07-17 Laser equipment

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005212678A Division JP3970292B2 (en) 2005-07-22 2005-07-22 Laser equipment

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JP2002033544A JP2002033544A (en) 2002-01-31
JP3723424B2 true JP3723424B2 (en) 2005-12-07

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031885A (en) 2001-07-19 2003-01-31 Toshiba Corp Semiconductor laser device
JP3737769B2 (en) 2002-03-28 2006-01-25 株式会社東芝 Semiconductor laser device
JP4713250B2 (en) * 2005-07-01 2011-06-29 三菱電機株式会社 Semiconductor device and method for manufacturing semiconductor device
JP5197176B2 (en) * 2008-06-17 2013-05-15 パナソニック株式会社 Optical semiconductor device package, manufacturing method, and optical semiconductor device

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