JPH0645519A - Multiple module - Google Patents

Multiple module

Info

Publication number
JPH0645519A
JPH0645519A JP4197987A JP19798792A JPH0645519A JP H0645519 A JPH0645519 A JP H0645519A JP 4197987 A JP4197987 A JP 4197987A JP 19798792 A JP19798792 A JP 19798792A JP H0645519 A JPH0645519 A JP H0645519A
Authority
JP
Japan
Prior art keywords
insulating substrate
semiconductor chip
chip
chip module
semiconductor chips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4197987A
Other languages
Japanese (ja)
Other versions
JP3036976B2 (en
Inventor
Yuji Matsubara
祐司水梨 晴美 松原
Harumi Mizunashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP4197987A priority Critical patent/JP3036976B2/en
Publication of JPH0645519A publication Critical patent/JPH0645519A/en
Application granted granted Critical
Publication of JP3036976B2 publication Critical patent/JP3036976B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1532Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/15322Connection portion the connection portion being formed on the die mounting surface of the substrate being a pin array, e.g. PGA

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To reduce the size of a multichip module, by dividing an insulating substrate for mounting semiconductor chips, and forming a first insulating substrate and a second insulating substrate which is fixed almost vertically to the first insulating substrate. CONSTITUTION:An insulating substrate is divided into an insulating substrate 1 and a leadless chip carrier type insulating substrate 2. A semiconductor chip 5 composed of logic circuit elements of a CPU, an FPU, etc., whose heating value is large is mounted on the substrate 1. The insulating substrate 2 is fixed vertically to the insulating substrate 1, and mounts semiconductor chips of volume heating value like a storage device. Thereby the size of a multichip module can be reduced. Hence the wiring length, i.e., the propagation delay time can be shortened by the effect of wire length reduction, and high speed operation is enabled.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はマルチチップモジュール
に関し、特に高速動作用の演算回路等の高密度実装に適
するマルチチップモジュールに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multi-chip module, and more particularly to a multi-chip module suitable for high-density mounting of arithmetic circuits for high speed operation.

【0002】[0002]

【従来の技術】従来のマルチチップモジュールは、図5
に示すように、複数の半導体チップ5が配線パターン
(図示省略)を有するアルミナセラミックの絶縁基板7
に搭載され、絶縁基板7と半導体チップ5とは金属細線
6によって接続され、絶縁基板7の上記配線パターンは
外部リード3によって接続されているというものであっ
た。また、絶縁基板7は金ろう等のろう材により封止さ
れるキャップ4を備えていた。また半導体チップ5から
の発生熱の効果的な放熱のために絶縁基板7の半導体チ
ップ搭載面と反対面にヒートシンク16が高熱伝導性の
接着剤15あるいはろう材により接着されているという
ものであった。
2. Description of the Related Art A conventional multi-chip module is shown in FIG.
As shown in FIG. 2, an insulating substrate 7 made of alumina ceramic in which a plurality of semiconductor chips 5 have wiring patterns (not shown)
The insulating substrate 7 and the semiconductor chip 5 are connected to each other by the thin metal wire 6, and the wiring pattern of the insulating substrate 7 is connected to the external lead 3. Further, the insulating substrate 7 was provided with the cap 4 sealed with a brazing material such as gold brazing. Further, in order to effectively dissipate the heat generated from the semiconductor chip 5, the heat sink 16 is adhered to the surface of the insulating substrate 7 opposite to the surface on which the semiconductor chip is mounted by the adhesive 15 having a high thermal conductivity or the brazing material. It was

【0003】この従来のマルチチップモジュールの構造
で、例えば、中央処理ユニット(CPU)と、浮動小数
点処理ユニット(FPU)と、バスインタフェースユニ
ット(BIU)とが各1個、メモリが6個の合計9個の
半導体チップで構成され、発熱量の合計が16Wのマル
チチップモジュールの場合は、絶縁基板7の大きさが8
5mm×85mmとなる。上記構成のマルチチップモジ
ュールは、例えば、ワークステーションの演算処理に用
いられ、最も高速動作が要求される部分であるというも
のであった。
In the structure of this conventional multi-chip module, for example, a central processing unit (CPU), a floating point processing unit (FPU), a bus interface unit (BIU) are each provided in a unit of 1 and a total of 6 memories. In the case of a multi-chip module which is composed of 9 semiconductor chips and has a total calorific value of 16 W, the size of the insulating substrate 7 is 8
It is 5 mm x 85 mm. The multi-chip module having the above-described configuration is used, for example, in the arithmetic processing of a workstation, and is the part that requires the highest speed operation.

【0004】[0004]

【発明が解決しようとする課題】上述した従来のマルチ
チップモジュールは、半導体チップが絶縁基板の一面に
のみ搭載されているので、上記半導体チップの数が増加
すると絶縁基板の面積が増大し、配線長が増加すること
による浮遊容量の増大のため信号の遅延時間が増大し高
速動作が困難になるという欠点があった。
In the above-mentioned conventional multi-chip module, the semiconductor chip is mounted only on one surface of the insulating substrate. Therefore, when the number of the semiconductor chips increases, the area of the insulating substrate increases, and wiring is increased. Due to the increase in stray capacitance due to the increase in length, the signal delay time increases, which makes it difficult to operate at high speed.

【0005】また、絶縁基板に搭載されている半導体チ
ップの一個でも不良であれば、このマルチチップモジュ
ール全体が不良となるため、多数の半導体チップを搭載
する極端に歩留りが低下するという欠点があった。
Further, if even one semiconductor chip mounted on the insulating substrate is defective, the entire multi-chip module will be defective, so that a large number of semiconductor chips will be mounted, resulting in an extremely low yield. It was

【0006】[0006]

【課題を解決するための手段】本発明のマルチチップモ
ジュールは、一面に少なくとも1個の第一の半導体チッ
プを搭載する第一の絶縁基板と、前記第一の絶縁基板に
ほぼ垂直に取付けられるとともに一面に少なくとも1個
の第二の半導体チップを搭載する少なくとも1個の第二
の絶縁基板とを備えて構成されている。
A multi-chip module of the present invention is mounted on a first insulating substrate on which at least one first semiconductor chip is mounted on one surface, and is mounted substantially vertically on the first insulating substrate. And at least one second insulating substrate having at least one second semiconductor chip mounted on one surface.

【0007】[0007]

【実施例】次に、本発明の実施例について図面を参照し
て説明する。
Embodiments of the present invention will now be described with reference to the drawings.

【0008】図1は本発明のマルチチップモジュールの
第一の実施例を示す(A)は平面図、(B)は(A)の
A−A断面図である。
FIG. 1 shows a first embodiment of a multi-chip module of the present invention, (A) is a plan view and (B) is a sectional view taken along the line AA of (A).

【0009】本実施例のマルチチップモジュールは、図
1(A),(B)に示すように、発熱量の多いCPUや
FPU等の論理回路素子から成る半導体チップ5を搭載
した絶縁基板1と、絶縁基板1に垂直に取付けられメモ
リ等の低発熱量の半導体チップ8を搭載しリードレスチ
ップキャリヤ型の絶縁基板2と、半導体チップ5,8と
絶縁基板1,2との電気的接続用の金属細線6と、絶縁
基板1,2のそれぞれの封止用のキャップ4とを備えて
構成されている。
As shown in FIGS. 1 (A) and 1 (B), the multi-chip module of this embodiment has an insulating substrate 1 on which a semiconductor chip 5 composed of a logic circuit element such as a CPU or an FPU which generates a large amount of heat is mounted. , A leadless chip carrier type insulating substrate 2 mounted vertically on the insulating substrate 1 and having a semiconductor chip 8 of low heat generation such as a memory, for electrical connection between the semiconductor chips 5 and 8 and the insulating substrates 1 and 2. The thin metal wire 6 and the caps 4 for sealing the insulating substrates 1 and 2 are provided.

【0010】図2は、絶縁基板2の外観を示す斜視図で
ある。絶縁基板2の電極パッド12は図2に示すよう
に、4辺のうちの下面の1辺にのみ配置され、絶縁基板
1上の電極パッド(図示省略)と半田付けにより接続さ
れる。また、取付けの機械的強度の確保のために取付面
のほぼ中央部の半田付けエリア9の半田付けにより絶縁
基板1に接着される。
FIG. 2 is a perspective view showing the appearance of the insulating substrate 2. As shown in FIG. 2, the electrode pad 12 of the insulating substrate 2 is arranged only on one side of the lower surface of the four sides and is connected to the electrode pad (not shown) on the insulating substrate 1 by soldering. Further, in order to secure the mechanical strength of the attachment, it is adhered to the insulating substrate 1 by soldering in the soldering area 9 at the substantially central portion of the attachment surface.

【0011】上述のような構成により、本実施例のマル
チチップモジュールの寸法は非常に低減することができ
る。例えば、従来例と同様の構成で絶縁基板1に搭載す
るCPU,FPU等の論理回路素子から成る3個の半導
体チップ5の発熱量を合計10W、6個の絶縁基板2に
それぞれ1個ずつ搭載したメモリの発熱量を合計6Wと
すると、約35mm×35mmとすることが可能であ
る。したがって、配線長、すなわち伝播遅延時間をその
分短縮でき、より高速動作が可能となる。
With the configuration as described above, the size of the multichip module of this embodiment can be greatly reduced. For example, the heat generation amount of three semiconductor chips 5 composed of logic circuit elements such as CPU and FPU mounted on the insulating substrate 1 in the same configuration as the conventional example is 10 W in total, and one is mounted on each of the six insulating substrates 2. When the total amount of heat generated by the memory is 6 W, it can be about 35 mm × 35 mm. Therefore, the wiring length, that is, the propagation delay time can be shortened by that amount, and a higher speed operation becomes possible.

【0012】また、上述のような構造により、絶縁基板
2がヒートシンクの役目を果たし、絶縁基板1に搭載す
るCPU,FPU等の論理回路素子からの発熱を効果的
に放熱できる。したがって、従来必要としたヒートシン
クが不要となる。
Further, with the structure as described above, the insulating substrate 2 functions as a heat sink, and the heat generated from the logic circuit elements such as CPU and FPU mounted on the insulating substrate 1 can be effectively radiated. Therefore, the heat sink conventionally required becomes unnecessary.

【0013】さらに、絶縁基板1,2にそれぞれ半導体
チップを搭載してから電気試験により良品のみを選別し
てマルチチップモジュールを構成できるので、歩留り向
上とこれによるコストダウンができる。
Further, since a semiconductor chip is mounted on each of the insulating substrates 1 and 2, only non-defective products can be selected by an electrical test to form a multi-chip module, so that the yield can be improved and the cost can be reduced.

【0014】なお、本実施例では、絶縁基板1,2間の
電気的接続および機械的取付を半田付けで行なっていた
が、半田付けに限らずたとえば金ろうを用いたろう付け
でもよい。また、絶縁基板1,2の材料はアルミナを用
いているが、半導体チップの発熱量が大きい場合にはさ
らに熱伝導率が良好な窒化アルミニウムを用いた方が良
い。
In the present embodiment, the electrical connection and the mechanical attachment between the insulating substrates 1 and 2 are performed by soldering, but the invention is not limited to soldering, and for example, brazing using gold solder may be used. Further, although alumina is used as the material of the insulating substrates 1 and 2, it is preferable to use aluminum nitride, which has better thermal conductivity, when the amount of heat generated by the semiconductor chip is large.

【0015】次に、本発明の第二の実施例について説明
する。
Next, a second embodiment of the present invention will be described.

【0016】図3は本発明のマルチチップモジュールの
第二の実施例を示す(A)は平面図、(B)は(A)の
A−A断面図である。
3A and 3B show a second embodiment of the multichip module of the present invention. FIG. 3A is a plan view and FIG. 3B is a sectional view taken along line AA of FIG.

【0017】本実施例の前述の第一の実施例に対する相
違点は、絶縁基板1,2の材料をエポキシ系樹脂とし、
メモリ等の半導体チップ8を格納したプラスチックリー
デッドチップキャリヤ(PLCC)10が、絶縁基板2
に半田付けにより搭載されている。また、絶縁基板1と
の取付は絶縁基板1上に設けたコネクタ11に一端にコ
ネクタ端子を形成した絶縁基板2を挿入することにより
行なわれる。さらに放熱効果を高めるためヒートシンク
16を用いることもできる。さらに、絶縁基板1に搭載
された半導体チップ5は枠13で囲われ樹脂12で封止
され、半導体チップ5とヒートシンク16との間の熱伝
導を向上させるため絶縁基板1内に熱伝導板14を設け
ており、高熱伝導性の接着剤15によりヒートシンクに
接着されている。
The difference between this embodiment and the first embodiment is that the insulating substrates 1 and 2 are made of epoxy resin,
A plastic leaded chip carrier (PLCC) 10 storing a semiconductor chip 8 such as a memory is used as an insulating substrate 2.
It is mounted by soldering. The attachment to the insulating substrate 1 is performed by inserting the insulating substrate 2 having a connector terminal at one end into the connector 11 provided on the insulating substrate 1. Further, the heat sink 16 can be used to enhance the heat radiation effect. Further, the semiconductor chip 5 mounted on the insulating substrate 1 is surrounded by the frame 13 and sealed with the resin 12, and in order to improve heat conduction between the semiconductor chip 5 and the heat sink 16, the heat conducting plate 14 is provided inside the insulating substrate 1. Is provided and is adhered to the heat sink with the adhesive 15 having high thermal conductivity.

【0018】また、PLCCの代りに絶縁基板2に直接
半導体チップ8を搭載し、絶縁基板2とヒートシンク1
6とを高熱伝導性接着剤により接着することにより一層
放熱性を向上することもできる。
Further, instead of PLCC, the semiconductor chip 8 is directly mounted on the insulating substrate 2, and the insulating substrate 2 and the heat sink 1 are mounted.
It is also possible to further improve heat dissipation by adhering 6 and 6 with a high thermal conductive adhesive.

【0019】次に、本発明の第三の実施例について説明
する。
Next, a third embodiment of the present invention will be described.

【0020】図4は、本発明のマルチチップモジュール
の第三の実施例を示す断面図である。
FIG. 4 is a sectional view showing a third embodiment of the multichip module of the present invention.

【0021】本実施例の前述の第一,第二の実施例に対
する相違点は、絶縁基板1,2の材料を窒化アルミニウ
ムとし、絶縁基板1の表面に搭載された高発熱の半導体
チップ5の発生熱を絶縁基板1を経由して表面に取付け
られた絶縁基板2に伝導させ放熱させるというものであ
る。
The difference between this embodiment and the first and second embodiments described above is that the insulating substrates 1 and 2 are made of aluminum nitride and the high heat generating semiconductor chip 5 mounted on the surface of the insulating substrate 1 is used. The generated heat is conducted to the insulating substrate 2 mounted on the surface via the insulating substrate 1 to radiate the heat.

【0022】[0022]

【発明の効果】以上説明したように、本発明のマルチチ
ップモジュールは、半導体チップを搭載する絶縁基板を
分割して、第一の絶縁基板とこの第一の絶縁基板にほぼ
垂直に取付けられる第二の絶縁基板とを備えることによ
り、マルチチップモジュールの寸法を低減したので、伝
播遅延時間が短縮され、したがって回路動作の高速化が
可能となるという効果がある。
As described above, in the multi-chip module of the present invention, the insulating substrate on which the semiconductor chip is mounted is divided, and the first insulating substrate and the first insulating substrate are mounted substantially vertically. Since the size of the multichip module is reduced by providing the second insulating substrate, there is an effect that the propagation delay time is shortened and therefore the circuit operation can be speeded up.

【0023】また、半導体チップを搭載した第一および
第二の絶縁基板を電気試験により個々に選別することに
より、良品のみでマルチチップモジュールを構成できる
ので製造歩留りを向上することができるという効果があ
る。
Further, by individually selecting the first and second insulating substrates on which the semiconductor chips are mounted by an electrical test, a multi-chip module can be constructed with only non-defective products, so that the manufacturing yield can be improved. is there.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のマルチチップモジュールの第一の実施
例を示す平面図およびそのA−A断面図である。
FIG. 1 is a plan view showing a first embodiment of a multi-chip module of the present invention and a sectional view taken along the line AA.

【図2】本実施例のマルチチップモジュールの絶縁基板
の一例を示す斜視図である。
FIG. 2 is a perspective view showing an example of an insulating substrate of the multi-chip module of this embodiment.

【図3】本発明のマルチチップモジュールの第二の実施
例を示す平面図およびそのA−A断面図である。
FIG. 3 is a plan view showing a second embodiment of the multi-chip module of the present invention and a sectional view taken along the line AA.

【図4】本発明のマルチチップモジュールの第三の実施
例を示す断面図である。
FIG. 4 is a sectional view showing a third embodiment of the multi-chip module of the present invention.

【図5】従来のマルチチップモジュールの一例を示すブ
ロック図である。
FIG. 5 is a block diagram showing an example of a conventional multi-chip module.

【符号の説明】[Explanation of symbols]

1,2,7 絶縁基板 3 外部リード 4 キャップ 5,8 半導体チップ 6 金属細線 9 半田接着エリア 10 PLCC 11 コネクタ 12 樹脂 13 枠 14 熱伝導板 15 接着剤 16 ヒートシンク 17 電極パッド 1,2,7 Insulation board 3 External lead 4 Cap 5,8 Semiconductor chip 6 Metal thin wire 9 Solder bonding area 10 PLCC 11 Connector 12 Resin 13 Frame 14 Heat conduction plate 15 Adhesive 16 Heat sink 17 Electrode pad

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 一面に少なくとも1個の第一の半導体チ
ップを搭載する第一の絶縁基板と、 前記第一の絶縁基板にほぼ垂直に取付けられるとともに
一面に少なくとも1個の第二の半導体チップを搭載する
少なくとも1個の第二の絶縁基板とを備えることを特徴
とするマルチチップモジュール。
1. A first insulating substrate on which at least one first semiconductor chip is mounted on one surface, and at least one second semiconductor chip mounted on the first insulating substrate substantially vertically and on one surface. And at least one second insulating substrate for mounting the multi-chip module.
【請求項2】 前記第一の半導体チップが論理回路素子
であり前記第二の半導体チップはメモリ素子であること
を特徴とする請求項1記載のマルチチップモジュール。
2. The multi-chip module according to claim 1, wherein the first semiconductor chip is a logic circuit element and the second semiconductor chip is a memory element.
【請求項3】 前記第一の絶縁基板に配線接続用のコネ
クタを備え前記第二の絶縁基板が前記コネクタを介して
前記第一の絶縁基板に取付けられることを特徴とする請
求項1記載のマルチチップモジュール。
3. The first insulating substrate is provided with a connector for wiring connection, and the second insulating substrate is attached to the first insulating substrate via the connector. Multi-chip module.
【請求項4】 前記第一の絶縁基板に取付けらたヒート
シンクを備え前記第二の絶縁基板が前記ヒートシンクに
接着されていることを特徴とする請求項1記載のマルチ
チップモジュール。
4. The multi-chip module according to claim 1, further comprising a heat sink attached to the first insulating substrate, wherein the second insulating substrate is bonded to the heat sink.
JP4197987A 1992-07-24 1992-07-24 Multi-chip module Expired - Lifetime JP3036976B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4197987A JP3036976B2 (en) 1992-07-24 1992-07-24 Multi-chip module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4197987A JP3036976B2 (en) 1992-07-24 1992-07-24 Multi-chip module

Publications (2)

Publication Number Publication Date
JPH0645519A true JPH0645519A (en) 1994-02-18
JP3036976B2 JP3036976B2 (en) 2000-04-24

Family

ID=16383629

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4197987A Expired - Lifetime JP3036976B2 (en) 1992-07-24 1992-07-24 Multi-chip module

Country Status (1)

Country Link
JP (1) JP3036976B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53160750U (en) * 1977-05-24 1978-12-16
JPS6399559A (en) * 1986-10-15 1988-04-30 Mitsubishi Electric Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53160750U (en) * 1977-05-24 1978-12-16
JPS6399559A (en) * 1986-10-15 1988-04-30 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JP3036976B2 (en) 2000-04-24

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