JP3221072B2 - Resin-sealed semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a Quad Flat Package (Q
The present invention relates to an FP) type resin-encapsulated semiconductor device, and particularly relates to a QF having a built-in semiconductor chip (hereinafter abbreviated as a chip) having high heat generation.
The present invention relates to a P-type resin-sealed semiconductor device (hereinafter abbreviated as a QFP semiconductor device).

[0002]

2. Description of the Related Art Semiconductor devices used in computers, personal computers, and the like are so-called QFP type semiconductor devices for the purpose of reducing the size, thickness, and weight of electronic devices, and increasing production efficiency in the production thereof. Many resin-encapsulated semiconductor devices for surface mounting are used. FIG. 4 shows a conventional QFP having a gull-wing type outer lead.
1 shows a cross-sectional view of a semiconductor device. Also, Small Out-line J
-bend Package (SOJ) type resin-encapsulated semiconductor devices have an insulator film on top of a part of the inner leads to accommodate the chip to be enlarged in a package of standardized size for semiconductor memory. There has been proposed a resin-encapsulated semiconductor device compatible with surface mounting called a Chip-On-Lead (COL) structure in which a chip of a semiconductor memory is adhered through a semiconductor device. (See JP-A-61-218139)

[0003]

By the way, the QFP type semiconductor device has been conventionally used as a semiconductor device having relatively low heat generation. For example, the QFP type semiconductor device has a large power consumption exceeding 1 watt, that is, a heat generation amount. It is not suitable for heat dissipation of a chip of a large semiconductor device because of its low heat dissipation. Recently, the terminal density per unit area of a semiconductor device mounted on a printed circuit board in an electronic device has significantly increased, and the amount of heat generated by the semiconductor device has been increased due to the increase in the number of elements and the speed. The heat dissipation measures of the semiconductor device itself, as well as the heat dissipation measures of
It is about to become a major factor for thinner, lighter, faster and more multifunctional.

[0004] On the other hand, a semiconductor device having a COL structure for a semiconductor memory also does not focus on heat dissipation.
It has not yet been applied to a QFP semiconductor device requiring high heat dissipation.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a small-sized QFP semiconductor device suitable for high-density mounting, on which a chip generating a large amount of heat is mounted.

[0006]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention is to form a chip by bonding a chip via an insulating film to an upper part of an inner lead extended from an outer lead. Is electrically connected to the inner leads and the inner leads are radially arranged such that the tips of the inner leads are directed toward the center of the chip. The inner leads of the QFP type semiconductor device have inner leads at the outer edge of the chip. The width of the lead is formed larger than the width of the inner lead at the inner edge of the chip, and the lead is disposed inside a triangle formed by a diagonal line of the chip or a triangle obtained by equally dividing the apex angle of the triangle including the center point of the chip. The area of the area where the inner lead covers the chip is equal in each triangle, and the suspension leads at the four corners of the resin A layout is a length that does not reach the chip, configured thus removing the suspension leads in some cases. Then, a frame-shaped conductive film is formed on the peripheral portion of the chip on the upper surface of the insulator film of all the QFP semiconductor devices described above.

[0007]

Therefore, the QFP semiconductor device of the present invention
A chip is adhered to the upper part of the inner lead extended from the outer lead via an insulating film, an electrode formed on the chip is electrically connected to the inner lead, and a tip of the inner lead is directed toward the center of the chip. The heat generated in the chip is efficiently transmitted from the outer leads connected to the plurality of inner leads to the printed circuit board via the thin insulating film. The inner lead is formed such that the width of the inner lead at the outer edge of the chip is larger than the width of the inner lead at the inner edge of the chip, and the apex angle of the triangle formed by the diagonal line of the chip or the triangle including the center point of the chip is conformal. The area of the area where the inner leads disposed inside the divided triangles cover the chip is equal in each triangle, so that the inner lead pitch becomes finer, and even if the number of inner leads increases, the chip The number of inner leads that can be extended from the inside can be increased. Also, the inner lead can be brought close to the center of the chip. Therefore, the heat of the package having various inner lead pitches and the number of inner leads can be uniformly and efficiently radiated, and the electrical characteristics of the entire chip can be made uniform.

The suspending leads at the four corners of the resin sealing portion are arranged only in the resin sealing portion and have a length that does not reach the chip. In some cases, the suspending leads are configured to be removed. Since there is no suspension lead for supporting the die pad for fixing the inner lead, the space for routing the inner lead is increased, and the degree of freedom in the routing of the inner lead is improved. Therefore, the number of inner leads that can be arranged inside the chip is increased, so that heat dissipation is improved, and it is easy to cope with miniaturization of the inner lid pitch, and it is easy to cope with an increase in the terminal density of the semiconductor device. Become. A frame-shaped conductive film is formed on the periphery of the chip on the upper surface of the insulator film of all the QFP type semiconductor devices. By using the conductive film as, for example, a ground line, it operates at high speed and generates heat. Even if a large amount of chips is mounted, heat dissipation is good, so that high-speed operation can be guaranteed, and a semiconductor device which is stable against side effects such as power supply noise can be provided.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a QFP semiconductor device according to the present invention will be described in detail with reference to the illustrated embodiments. 1A and 1B show a QFP type semiconductor device according to a first embodiment of the present invention, wherein A is a plan view showing a part of an upper surface of a sealing resin cut away, and B is a sectional view. As shown in FIG. 1, reference numeral 1 denotes a resin sealing portion of a QFP semiconductor device, which is made of a resin mainly composed of a fused quartz filler and an epoxy resin. 2. Applied specific IC such as gate array and standard cell
(ASIC) chip, and pad electrodes (not shown) are arranged on the periphery of the chip 2. A frame-shaped insulating film 3 (hereinafter abbreviated as film 3) is adhered to the back surface of the chip 2 by, for example, an epoxy-based thermosetting adhesive (not shown). The film 3 is made of, for example, a 0.1 mm polyimide resin and has a function of maintaining electrical insulation between an inner lead described later and the chip 2 and fixing the chip 2 mounted on the inner lead. .

Here, 4, 4,... Are inner leads made of an Fe--Ni alloy or a Cu alloy which are signal transmission paths, and the tips of the inner leads 4, 4,.
Is stretched inward from the outer periphery of the chip 2 and is adhered and fixed to the back surface of the chip 2 via the film 3 with, for example, an epoxy-based thermosetting adhesive or a thermoplastic adhesive (not shown). The inner leads 4, 4,... Are extended radially outward from the center point of the chip 2 to become outer leads 5, 5,. The outer leads 5, 5,... Are bent into a shape called a gull wing so that batch soldering by infrared reflow can be performed. The thickness of the resin sealing portion 1 on the upper side of the chip 2 and the resin sealing portion 1 on the lower side of the chip 2 which are indispensable for obtaining good resin moldability are formed on the inner leads 4.
And the pad electrodes of the chip 2 are electrically connected to the inner leads 4, 4,... By Au wires 6, 6,. . The connection points between the Au wires 6, 6,... And the inner leads 4, 4,.

On the inside of the four corners of the resin sealing portion 1 forming a square, suspension leads 7 of about 0.5 mm are provided.
Are arranged, and are cut in the immediate vicinity of the resin sealing portion 1. The purpose of the suspension leads 7, 7,... Is to provide outer leads 5 of the semiconductor device resin-molded in a lead frame state.
The purpose of the present invention is to prevent the semiconductor device from falling from the lead frame and falling apart when cutting and bending from the lead frame. However, the suspension leads 7, 7
Are not used for the above-mentioned purpose, that is, they may not be provided when there is no problem if the outer leads 5, 5,. In this manner, by forming the suspension leads 7, 7,... At the four corners of the resin sealing portion 1 not to reach the chip 2 or by removing them, the corners of the adjacent sides of the resin sealing portion 1 There is a space in which the inner leads 4, 4,... Are arranged, and the degree of freedom of the arrangement of the inner leads 4, 4,. As a result, the inner leads 4, 4,.
Can be extended below the chip 2 even if the number of the leads becomes large.

According to the embodiment as described above, the heat generated in the chip 2 is transmitted from the outer leads 5, 5,... Engaged with all the inner leads 4, 4,. It is possible to efficiently radiate heat to the outside of the semiconductor device through a heat conduction path made of a metal material having very good heat conductivity to a printed board (not shown).

Next, a description will be given of a QFP type semiconductor device according to a second embodiment of the present invention. FIG. 2 is a plan view of a QFP semiconductor device according to a second embodiment of the present invention, in which a part of a resin-encapsulated upper surface is cut away. As shown in FIG. 2, an inner lead 4 disposed in a right isosceles triangle formed by a diagonal line of the chip 2 below the chip 2.
The area enclosed by 4... Is equal to four right-angled isosceles triangles, and the inner leads 4, 4.
The inner leads 4, 4,... Are drawn under the chip 2 so that the area surrounded by... Is equal for two or four triangles. The width of the inner lead 4 at the outer edge of the chip 2 is equal to the width of the inner lead 4 at the inner edge of the chip 2.
The tip of the inner lead 4 can be easily extended toward the center of the chip 2. As described above, the uniformity of the heat generated in the chip 2 can be improved, the electric characteristics of the entire chip 2 can be made uniform, and the heat discharging effect can be improved. Furthermore, even if the inner lead pitch becomes finer or the number of inner leads increases, the number of inner leads 4 that can be extended inward from the chip 2 can be increased, and the heat dissipation of various packages can be improved. it can.

Finally, a description will be given of a QFP semiconductor device according to a third embodiment of the present invention. FIG. 3A is a plan view of a QFP semiconductor device according to a third embodiment of the present invention, in which one quadrant of an upper surface of a sealing resin is cut away, and FIG. 3B is a sectional view. FIG.
As shown in A and B, the insulator film 3 has a frame shape, and its outer edge is larger than the chip 2 and its inner edge is smaller than the chip 2. And the insulator film 3
A conductive film 8 made of a Cu alloy thin film plated with, for example, Au on the periphery of the chip 2 is formed on the upper surface of the chip 2. The conductive film 8 is electrically connected to the Vss inner lead 4 s by an Au wire so as to have a Vss (ground) potential, for example, and can supply power from the conductive film 8 to an arbitrary Vss electrode of the chip 2 without increasing the number of leads. Therefore, even if the chip 2 operates at high speed and generates a large amount of heat, high-speed operation can be assured because of good heat-dissipating property. On the other hand, power supply noise, which is a concern, can be absorbed by the conductive film 8. Become like

[0015]

The effects obtained by the present invention will be briefly described. It is possible to provide a small, highly integrated QFP type resin-sealed semiconductor device equipped with a chip generating a large amount of heat.

[Brief description of the drawings]

FIG. 1 shows a QFP type semiconductor device according to a first embodiment of the present invention, wherein A is a plan view showing a part of an upper surface of a sealing resin cut away, and B is a sectional view.

FIG. 2 is a plan view of a QFP type semiconductor device according to a second embodiment of the present invention, in which a part of a resin-encapsulated upper surface is cut away.

3A and 3B show a QFP semiconductor device according to a third embodiment of the present invention, wherein A is a plan view showing a part of an upper surface of a sealing resin cut away, and B is a sectional view.

FIG. 4 is a cross-sectional view of a conventional resin-encapsulated semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Resin sealing part 2 Chip 3 Insulator film 4 Inner lead 4s Vss inner lead 5 Outer lead 6 Au wire 7 Suspension lead 8 Conductive film

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-1-280343 (JP, A) JP-A-63-306648 (JP, A) JP-A-4-168759 (JP, A) JP-A-3-308 132063 (JP, A) Japanese Utility Model Showa 63-82950 (JP, U) Japanese Utility Model 1-95759 (JP, U) Japanese Utility Model 3-65244 (JP, U) Japanese Utility Model Utility Model 3-32425 (JP, U) (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 23/50 H01L 23/28

Claims (4)

(57) [Claims] A semiconductor chip is adhered to an upper part of an inner lead extended from an outer lead via an insulating film, and an electrode formed on the semiconductor chip is electrically connected to the inner lead . The tip of the inner lead
Radially edge toward the center of the semiconductor chip
In the placed resin-encapsulated semiconductor device,
Hanging leads at the four corners are placed only in the resin sealing part, and semiconductor
Resin characterized by a length that does not reach the chip
Sealed semiconductor device. 2. An inner member extended from an outer lead.
-Semiconductor chip on top of the lead via insulator film
And bonding the electrodes formed on the semiconductor chip to the electrodes.
Electrically connect the inner lead to the end of the inner lead.
Radially edge toward the center of the semiconductor chip
In the resin-encapsulated semiconductor device, wherein the width of the inner lead at the outer edge of the semiconductor chip is larger than the width of the inner lead at the inner edge of the semiconductor chip, the insulator film has a frame shape and is formed by a diagonal line of the semiconductor chip. The area of the area where the inner lead disposed inside the triangle or a triangle obtained by dividing the apex angle of the triangle including the center point of the semiconductor chip into equal angles, covering the semiconductor chip is equal in each of the triangles. Resin-encapsulated semiconductor device. 3. The suspension leads at four corners of the resin sealing portion are resin-sealed.
Part only, not to reach the semiconductor chip
3. The resin-encapsulated semiconductor according to claim 2, wherein
apparatus. 4. A semiconductor chip on an upper surface of said insulator film.
Characterized in that a frame-shaped conductive film is formed on the periphery of
The resin-encapsulated semiconductor device according to claim 2.