JPH06451Y2 - Glo-discharge decomposition device - Google Patents

Glo-discharge decomposition device

Info

Publication number
JPH06451Y2
JPH06451Y2 JP11749287U JP11749287U JPH06451Y2 JP H06451 Y2 JPH06451 Y2 JP H06451Y2 JP 11749287 U JP11749287 U JP 11749287U JP 11749287 U JP11749287 U JP 11749287U JP H06451 Y2 JPH06451 Y2 JP H06451Y2
Authority
JP
Japan
Prior art keywords
substrate
glow discharge
mask body
film
discharge decomposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP11749287U
Other languages
Japanese (ja)
Other versions
JPS6422771U (en
Inventor
茂樹 白松
雄二 吉田
鴻吉 石櫃
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP11749287U priority Critical patent/JPH06451Y2/en
Publication of JPS6422771U publication Critical patent/JPS6422771U/ja
Application granted granted Critical
Publication of JPH06451Y2 publication Critical patent/JPH06451Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)

Description

【考案の詳細な説明】 〔産業上の利用分野〕 本考案は例えばアモルファスシリコンから成る電子写真
感光体ドラムを製造するためのグロー放電分解装置に関
するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application] The present invention relates to a glow discharge decomposition apparatus for manufacturing an electrophotographic photosensitive drum made of, for example, amorphous silicon.

〔従来技術及びその問題点〕[Prior art and its problems]

今日、アモルファスシリコンを光導電層とした電子写真
感光体が実用化されており、その優れた耐摩耗性、耐熱
性及び光感度特性並びに無公害性等々によって急速に市
場に浸透しつつある。
Nowadays, electrophotographic photoreceptors using amorphous silicon as a photoconductive layer have been put into practical use, and are rapidly penetrating the market due to their excellent wear resistance, heat resistance, photosensitivity, pollution-free properties and the like.

この電子写真感光体は円筒状基板の周面をグロー放電分
解法により成膜して得られるが、その成膜には基板温度
を約300℃に設定しており、そのため、成膜後に基板温
度が室温にまで下降した場合、アモルファスシリコン層
(以下、アモルファスシリコンをa-Siと略す)と基板の
熱膨張率の差が原因となって基板端部に応力が集中し、
これにより、基板端部が変形したり或いはその端部付近
に成膜されたa-Si槽が剥離するという問題があった。
This electrophotographic photosensitive member is obtained by forming a film on the peripheral surface of a cylindrical substrate by the glow discharge decomposition method, and the substrate temperature is set to about 300 ° C for the film formation. When the temperature drops to room temperature, stress concentrates on the edge of the substrate due to the difference in thermal expansion coefficient between the amorphous silicon layer (hereinafter, amorphous silicon is abbreviated as a-Si) and the substrate.
As a result, there is a problem that the end portion of the substrate is deformed or the a-Si tank formed near the end portion is peeled off.

〔考案の目的〕[Purpose of device]

従って本考案は叙上の事情に鑑みて完成されたものであ
り、その目的は基板端部の変形並びに膜の剥離が生じな
いようにしたグロー放電分解装置を提供することにあ
る。
Therefore, the present invention has been completed in view of the above circumstances, and an object of the present invention is to provide a glow discharge decomposition apparatus in which the deformation of the end portion of the substrate and the peeling of the film do not occur.

〔問題点を解決するための手段〕[Means for solving problems]

本考案によれば、成膜用ガスが導入される反応室内部に
円筒状基板が設置され、該基板と対向してグロー放電用
電極板が配置されており、グロー放電により基板周面上
に成膜されるグロー放電分解装置において、前記基板周
面の端部にマスク体を設置して該端部が成膜されないよ
うにしたことを特徴とするグロー放電分解装置が提供さ
れる。
According to the present invention, a cylindrical substrate is installed inside a reaction chamber into which a film-forming gas is introduced, and a glow discharge electrode plate is arranged so as to face the substrate. In the glow discharge decomposition apparatus for forming a film, there is provided a glow discharge decomposition apparatus, wherein a mask body is provided at an end portion of the peripheral surface of the substrate so that the end portion is not formed.

〔実施例〕〔Example〕

以下、本考案をa-Si感光体ドラムを製作することができ
るグロー放電分解装置を例にとって詳細に説明する。
Hereinafter, the present invention will be described in detail with reference to a glow discharge decomposition device capable of manufacturing an a-Si photosensitive drum.

第1図は本考案グロー放電分解装置であり、第2図は感
光体ドラムの端部を示す。
FIG. 1 shows a glow discharge decomposition apparatus of the present invention, and FIG. 2 shows an end portion of a photosensitive drum.

第1図において、1は円筒形状の反応容器、1aはその
蓋体、1bはその周壁であり、2は円筒形状のグロー放
電用電極板であり、3は筒状の導電性基板支持体、4は
成膜用筒状基板であり、この基板4は基板支持体3の鍔
部3aに載置され、両者の周面は相互にゆるやかに接触
して電気的に導通している。そして、蓋体1aの上に付
設されたモーター5により回転軸6を介して基板支持体
3が回転駆動され、これに伴って筒状基板4が回転す
る。また、基板支持体3、回転軸6、蓋体1a及び周壁
1bは電気的に導通しており、周壁1bに付設された電
力入力用端子7とグロー放電用電極板2に付設された電
力入力用端子8は高周波電源9に接続され、このような
電力印加系のもとでグロー放電用電極板2と基板4の間
でグロー放電が発生する、尚、10、11は電極板2と
反応容器1を電気的に絶縁するリング体である。
In FIG. 1, 1 is a cylindrical reaction vessel, 1a is its lid, 1b is its peripheral wall, 2 is a cylindrical glow discharge electrode plate, 3 is a cylindrical conductive substrate support, Reference numeral 4 denotes a film-forming cylindrical substrate. The substrate 4 is placed on the flange portion 3a of the substrate support 3, and the peripheral surfaces of the both substrates are in gentle contact with each other and electrically connected. Then, the substrate support 3 is rotationally driven by the motor 5 attached on the lid 1a via the rotary shaft 6, and the tubular substrate 4 is rotated accordingly. The substrate support 3, the rotary shaft 6, the lid 1a, and the peripheral wall 1b are electrically connected to each other, and the power input terminal 7 attached to the peripheral wall 1b and the power input attached to the glow discharge electrode plate 2 are electrically connected. The terminal 8 is connected to a high frequency power source 9, and glow discharge is generated between the glow discharge electrode plate 2 and the substrate 4 under such a power application system, and 10 and 11 react with the electrode plate 2. It is a ring body that electrically insulates the container 1.

12はガス導入口、13はガス排出口であり、a-Si成膜
用ガスがガス導入口12を介して反応容器1の内部へ導
入され、次いで電極板2に貫設された複数個のガス噴出
口14を介して基板4に向けて噴き出される。
Reference numeral 12 is a gas inlet, and 13 is a gas outlet. The a-Si film-forming gas is introduced into the reaction vessel 1 through the gas inlet 12, and then a plurality of electrode plates 2 are provided so as to penetrate therethrough. It is jetted toward the substrate 4 through the gas jet port 14.

そして、上記グロー放電分解装置においては、基板4の
上端及び/又は下端にそれぞれリング状のマスク体15
を挿着しており、基板4の端部面が成膜されないように
している。
In the glow discharge decomposition apparatus, the ring-shaped mask body 15 is provided on each of the upper end and / or the lower end of the substrate 4.
Is attached so that the end surface of the substrate 4 is not formed.

a-Si感光体ドラムを製作する場合、上記のような電力印
加系及びガス流系の下で基板4が回転駆動され、更に基
板支持体3の内部に配置されたヒータ16によって基板
4を所定の温度に設定し、グロー放電分解によって基板
4上にa-Si膜が気相成長される。そして、この気相成長
に伴って生じるガス分解残余ガスはガス排出口13を介
して排出される。尚、図中の矢印はガス流の方向を表わ
す。
When manufacturing an a-Si photoconductor drum, the substrate 4 is rotationally driven under the power application system and the gas flow system as described above, and the substrate 4 is predetermined by the heater 16 arranged inside the substrate support 3. The temperature is set to and the a-Si film is vapor-phase grown on the substrate 4 by glow discharge decomposition. Then, the gas decomposition residual gas generated by the vapor phase growth is discharged through the gas discharge port 13. The arrow in the figure indicates the direction of gas flow.

上記構成のグロー放電分解装置を用いて成膜し、成膜終
了後にマスク体15を取り外すと第2図(A)に示すよ
うにa-Si層17が形成されるが、基板周面端部に非成膜
部4aができる。このように成膜された基板4において
はその端部に応力が集中しておらず、その結果、基板端
部が変形せず、その端部面におけるa-Si層の剥離がな
い。然るに、マスク体15を用いない従来のグロー放電
分解装置においては、第2図(B)に示すように基板端
部で変形し、また、a-Si層の一部が(C)箇所で剥離し
ていた。
A film is formed by using the glow discharge decomposition apparatus having the above structure, and when the mask body 15 is removed after the film formation is completed, the a-Si layer 17 is formed as shown in FIG. 2 (A). The non-film-forming part 4a is formed in this. In the substrate 4 thus formed, the stress is not concentrated on the end portion thereof, as a result, the substrate end portion is not deformed, and the a-Si layer is not peeled off on the end face. However, in the conventional glow discharge decomposition apparatus which does not use the mask body 15, as shown in FIG. 2 (B), the substrate is deformed at the end portion and a part of the a-Si layer is peeled off at the portion (C). Was.

上記マスク体15と基板4の間には実質上隙間がないの
が望ましく、それによってa-Si成膜用ガスがマスク体1
5の内側に入り込まなくなって本考案の目的を有利に達
成することができる。
It is desirable that there is substantially no gap between the mask body 15 and the substrate 4, so that the a-Si film-forming gas is transferred to the mask body 1.
It is possible to advantageously achieve the object of the present invention by not entering the inside of 5.

更にマスク体15にはその熱膨張率が基板4の熱膨張率
に比べて同等又は小さい材質を選択するのがよく、これ
により、室温下でマスク体15を基板4に挿着し、次い
で基板4を昇温し、グロー放電を発生させた場合、その
昇温に伴ってマスク体15と基板4の隙間をなくすこと
ができる。
Further, for the mask body 15, it is preferable to select a material whose thermal expansion coefficient is equal to or smaller than that of the substrate 4, so that the mask body 15 is inserted into the substrate 4 at room temperature, and then the substrate When the temperature of 4 is raised and glow discharge is generated, the gap between the mask body 15 and the substrate 4 can be eliminated along with the temperature rise.

このマスク体15は350℃以下で変形しなく、更に耐
熱性を備えているのがよく、そして、グロー放電が生じ
ている間にそれ自体よりガスが発生しない材料でもって
構成するのがよい。このような材料としてステンレス、
アルミニウムなどがある。次に本考案者等が行った実験
を述べる。
It is preferable that the mask body 15 does not deform at 350 ° C. or lower, has heat resistance, and is made of a material that does not generate gas from itself during glow discharge. Stainless steel as such material,
Aluminum etc. Next, the experiments conducted by the inventors will be described.

第1図に示すグロー放電分解装置において、アルミニウ
ムから成る基板4(長さ340mm、外径100mm、厚み4mm)
を設置し、その基板にSUSから成るマスク体15(長
さ5mm、外径104mm)を基板両端部に挿着し、次いでグロ
ー放電を行い、基板周面にa-Si層(厚み30μm)を気相
成長させた。然る後、マスク体15を取り外し、基板端部
付近の外径を測定したところ、第3図に示す通りの結果
が得られた。
In the glow discharge decomposition apparatus shown in FIG. 1, a substrate 4 made of aluminum (length 340 mm, outer diameter 100 mm, thickness 4 mm)
, The mask body 15 made of SUS (length 5 mm, outer diameter 104 mm) is attached to both ends of the substrate, and then glow discharge is performed to form an a-Si layer (thickness 30 μm) on the peripheral surface of the substrate. Vapor grown. After that, the mask body 15 was removed, and the outer diameter in the vicinity of the end portion of the substrate was measured, and the result as shown in FIG. 3 was obtained.

同図中、横軸は基板端部からの長さ(mm単位)であり、
縦軸は成膜前の基板外径よりの外径変化量を示す。ま
た、○印は上記のようにマスク体15を用いた場合のプロ
ットであり、●印はマスク体15を用いない場合のプロッ
トであり、a及びbはそれぞれの特性曲線である。
In the figure, the horizontal axis is the length from the board edge (in mm),
The vertical axis represents the amount of change in outer diameter from the outer diameter of the substrate before film formation. Further, the circle marks are plots when the mask body 15 is used as described above, the black circles are plots when the mask body 15 is not used, and a and b are respective characteristic curves.

この結果より明らかな通り、マスク体15を挿着した場合
には基板端部が何等変形しなかったことが判る。これに
対して、マスク体を挿着しなかった場合、端部から8mm
の範囲内で基板端部が変形した。
As is clear from this result, it can be seen that the end portion of the substrate did not deform when the mask body 15 was inserted. On the other hand, if the mask body is not inserted, 8 mm from the end
The edge of the substrate was deformed within the range.

〔考案の効果〕[Effect of device]

以上の通り、本考案のグロー放電分解装置によれば、基
板周面端部が成膜されず、膜と基板の熱膨張差が原因と
なる応力集中がなくなり、これにより、基板端部の変形
並びに膜の剥離がなくなった。
As described above, according to the glow discharge decomposition apparatus of the present invention, the edge portion of the peripheral surface of the substrate is not formed, and the stress concentration caused by the difference in thermal expansion between the film and the substrate is eliminated. And the peeling of the film disappeared.

尚、本考案は上記実施例に限定されず、本考案の要旨を
逸脱しない範囲において種々の変更、改良等は何等差支
えない。
The present invention is not limited to the above embodiments, and various changes and improvements may be made without departing from the scope of the present invention.

【図面の簡単な説明】[Brief description of drawings]

第1図は本考案グロー放電分解装置の説明図、第2図
(A)はマスク体を用いて成膜された場合の基板端部の
概略図、第2図(B)はマスク体を用いなくて成膜され
た場合の基板端部の概略図、第3図は基板端部の変形度
を表わす線図である。 1・・・反応容器 2・・・グロー放電用電極板 4・・・成膜用筒状基板 15・・・マスク体
FIG. 1 is an explanatory view of a glow discharge decomposition apparatus of the present invention, FIG. 2 (A) is a schematic view of an end portion of a substrate when a film is formed using a mask body, and FIG. 2 (B) uses a mask body. FIG. 3 is a schematic view of the edge of the substrate when the film is formed without using it, and FIG. DESCRIPTION OF SYMBOLS 1 ... Reaction container 2 ... Glow discharge electrode plate 4 ... Cylindrical substrate for film formation 15 ... Mask body

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】成膜用ガスが導入される反応室内部に円筒
状基板が設置され、該基板と対向してグロー放電用電極
板が配置されており、グロー放電により基板周面上に成
膜されるグロー放電分解装置において、前記基板周面の
端部にマスク体を設置して該端部が成膜されないように
したことを特徴とするグロー放電分解装置。
1. A cylindrical substrate is installed inside a reaction chamber into which a film-forming gas is introduced, and a glow discharge electrode plate is arranged so as to face the substrate. In the glow discharge decomposition apparatus for film formation, a mask body is installed at an end of the peripheral surface of the substrate to prevent film formation at the end.
JP11749287U 1987-07-30 1987-07-30 Glo-discharge decomposition device Expired - Lifetime JPH06451Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11749287U JPH06451Y2 (en) 1987-07-30 1987-07-30 Glo-discharge decomposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11749287U JPH06451Y2 (en) 1987-07-30 1987-07-30 Glo-discharge decomposition device

Publications (2)

Publication Number Publication Date
JPS6422771U JPS6422771U (en) 1989-02-06
JPH06451Y2 true JPH06451Y2 (en) 1994-01-05

Family

ID=31360997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11749287U Expired - Lifetime JPH06451Y2 (en) 1987-07-30 1987-07-30 Glo-discharge decomposition device

Country Status (1)

Country Link
JP (1) JPH06451Y2 (en)

Also Published As

Publication number Publication date
JPS6422771U (en) 1989-02-06

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