JPS62133074A - Apparatus for producing electrophotographic sensitive body - Google Patents

Apparatus for producing electrophotographic sensitive body

Info

Publication number
JPS62133074A
JPS62133074A JP27381285A JP27381285A JPS62133074A JP S62133074 A JPS62133074 A JP S62133074A JP 27381285 A JP27381285 A JP 27381285A JP 27381285 A JP27381285 A JP 27381285A JP S62133074 A JPS62133074 A JP S62133074A
Authority
JP
Japan
Prior art keywords
supports
counter electrode
cylindrical
support
manufacturing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27381285A
Other languages
Japanese (ja)
Inventor
Kenichi Hara
健一 原
Toshiyuki Iijima
飯島 俊幸
Toyoki Kazama
風間 豊喜
Koichi Aizawa
宏一 会沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP27381285A priority Critical patent/JPS62133074A/en
Publication of JPS62133074A publication Critical patent/JPS62133074A/en
Pending legal-status Critical Current

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  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To enable stable and quick mass production of photosensitive bodies by providing plural pieces of supports for a conductive bar-shaped body which rotate and revolving horizontally in a vacuum vessel and using a metallic member having an arc-shaped section as a counter electrode. CONSTITUTION:Plural pieces of the supports 13 which rotate horizontally in a direction A and revolving in a direction B are horizontally arranged in the vacuum vessel 11. The cylindrical conductive base body 12 is mounted to such supports 13 by bringing the same into contact with the inside surface of said body. The counter electrode 14 having the arc shaped section is provided below the supports 13 apart at a prescribed space therefrom. The inside of the vacuum vessel 11 is evacuated by an evacuation device 19 and a gaseous raw material (for example, SiH4) is introduced from a supplying device 22 via an ejection part 23 into the vessel according to the above- mentioned constitution. The base body 12 is heated to the prescribed temp. via the supports 13 by a temp. control mechanism 21 and while the supports 13 are rotated and revolved by a rotational driving mechanism 24, a voltage is impressed between the supports and the counter electrode 14 from an RF power source 20 to generate glow discharge. The gaseous raw material is thereby cracked and the excellent photosensitive layer is deposited on the base body 12.

Description

【発明の詳細な説明】 〔発明の属する技術分野〕 本発明は導電性基体上にプラズマCVD法によりアモル
ファスシリコンを母材とする光導電性材料からなる感光
jΔを形成する電子写真用感光体の製造装暗に関する。
Detailed Description of the Invention [Technical Field to which the Invention Pertains] The present invention relates to a photoreceptor for electrophotography in which a photoreceptor jΔ made of a photoconductive material with amorphous silicon as a base material is formed on a conductive substrate by a plasma CVD method. Regarding manufacturing darkening.

〔従来技術とその間頂点] 従来、電子写真用感光体(以下、単(′こ感光体とも称
する)の光導電性材料としては非晶鍵セレン。
[Prior Art and Topics] Conventionally, amorphous key selenium has been used as a photoconductive material for electrophotographic photoreceptors (hereinafter also referred to as photoreceptors).

非晶質のセレン・テルル合金やセレン・ひ素合金。Amorphous selenium-tellurium alloys and selenium-arsenic alloys.

硫化カドミウム、酸化亜鉛などの無機材料、 PVK 
Inorganic materials such as cadmium sulfide and zinc oxide, PVK
.

TN’F”などの有機材料、フタロシアニン顔料、アゾ
顔料などが使用されてきた。これらの各材料からなる感
光層を有する感光体はそれぞれ利点を有するものの、耐
熱性が低い、耐刷性に欠ける。あるいは光感度が低いな
どの欠点を有しており、また材料が毒性を有するものも
あるなどの問題があり、感光体に要望される性能を必ず
しも充分満足しているとは君い維い。
Organic materials such as "TN'F", phthalocyanine pigments, azo pigments, etc. have been used. Photoreceptors with photosensitive layers made of each of these materials have their own advantages, but they have low heat resistance and lack printing durability. Also, they have drawbacks such as low photosensitivity, and some materials are toxic, so they do not necessarily fully satisfy the performance required of photoreceptors. .

これに対して、アモルファスシリコンを母材とする光導
’を性材料(以下単にa−8iとも称す)は光感度が優
れ耐熱性、耐刷性も良好で、大面積の:漠が比較的容易
に得られ、特に環境汚染の心配もないことから近年注目
を集めている。
On the other hand, the light guide material (hereinafter simply referred to as A-8I), which uses amorphous silicon as a base material, has excellent photosensitivity, heat resistance, and printing durability, and is relatively easy to print on large areas. It has been attracting attention in recent years because it can be obtained from various sources and is not particularly concerned about environmental pollution.

a−8i膜の成膜方法としては、蒸着法、スパッタリン
グ法、プラズマC■法、光CVD法などが知られている
が、感光体の感光1鰻の形成には主に高周波(RF)グ
ロー放電によるプラズマCVD i Z>(用いられる
。この方法は反応容器内を真空に減圧し、原料ガスとし
てシリコン(Si)をなむガス、列えばSiH4やS 
iF4などを導入し、反応容器内に配置された導電性基
体を一方の電極とし、これrK、対向する電極との間に
RF′直圧を印加してグロー放5によりプラズマを現出
させ、原料ガスを分解して基体上にa−8i膜を形成し
感光層とするうこの方法で成膜されるa−8i膜は、禁
制帝中の局在準位が少なくて光導電性が大きく、またジ
ボラン(JhHs)。
Vapor deposition method, sputtering method, plasma C method, photo-CVD method, etc. are known as methods for forming the a-8i film, but radio frequency (RF) glow is mainly used to form the photoreceptor. Plasma CVD by electric discharge iZ> (used. This method reduces the pressure inside the reaction vessel to vacuum, and uses a gas containing silicon (Si) as a raw material gas, such as SiH4 or S
iF4 or the like is introduced, a conductive substrate placed in the reaction vessel is used as one electrode, and RF' direct pressure is applied between it and the opposing electrode to generate plasma by glow emission 5. The A-8I film, which is formed by the method of decomposing the raw material gas and forming the A-8I film on the substrate to form a photosensitive layer, has fewer localized levels in the forbidden region and has high photoconductivity. , also diborane (JhHs).

フォスフイン(PH3)などのガスを原料ガスに混合し
て分解成膜することKより電導度制仰が可能で高抵抗化
することが可能であり、価電子制御も可能であり、さら
に炭素(C)、窒素(N)、酸素(0)などをa−8t
膜中に導入することもでき、感光体として要求される光
感度特性、温度特性7機械的強度、耐久性などを充分満
足しうる優れた性質を有していることが知られており、
このa−8iからなる感光層を有する感光体は性能面で
も製造技術的にも実用化の段階に至っている。
By mixing a gas such as phosphine (PH3) with the raw material gas and decomposing it into a film, it is possible to control the conductivity and increase the resistance, and it is also possible to control the valence electrons. ), nitrogen (N), oxygen (0), etc. a-8t
It can also be incorporated into films, and is known to have excellent properties that fully satisfy the photosensitivity characteristics, temperature characteristics 7, mechanical strength, durability, etc. required for photoreceptors.
A photoreceptor having a photosensitive layer made of this a-8i has reached the stage of practical use in terms of performance and manufacturing technology.

しかしながら、a−8t感光体を安定した性能で大肴生
度できる製造技術や方式は現存まだ確立されていない。
However, no manufacturing technology or method has yet been established that can produce large quantities of A-8T photoreceptors with stable performance.

a−8t感光体を製造する装置として例えば第3図に示
すようなプラズマCVD装置が知られている。
For example, a plasma CVD apparatus as shown in FIG. 3 is known as an apparatus for manufacturing an A-8T photoreceptor.

第3図において、真空槽1内に鉛直に配置された回転支
持体2に円筒状導電性基体3が装着され、その周りに基
体3に対向して中空の二重壁構造の円筒状1極4が真空
槽1に絶縁支持体く図示されてはいない)により固定さ
れている。基体3および’を極4は電極4を囲むように
取シ付けられた金属円筒5と上下の金属蓋6とにより電
気的にシールドされてプラズマを閉じ込める構造となっ
ている。真空槽1内を排気パルプ7を介して真空排気し
たのち、原料ガス導入口8より対向電極4の中空部を経
て対向電極4の基体に対向する表面に設けられた孔から
原料ガス例えばシランガス(SiH4)を導入し、ヒー
タ9により所定温度に加熱され回転せしめられている基
体3と対向電極4との間に電圧を印加しグロー放電によ
りプラズマを現出し、原料ガスを分解し基体3の表面に
a−8i膜を成膜し感光1−を形成する。しかし、この
様な装置は、同時に多数の基体にa−8i膜を形成する
ためには支持体2に一度に多数の基体を装着することに
なり、支持体が長くなって装置の高さが高くなり作業性
が悪くなり好ましくなく、感光体の電量には痛さない。
In FIG. 3, a cylindrical conductive substrate 3 is attached to a rotary support 2 vertically arranged in a vacuum chamber 1, and a hollow double-walled cylindrical monopole is placed around the rotating support 2, which faces the substrate 3. 4 is fixed to the vacuum chamber 1 by an insulating support (not shown). The base body 3 and the pole 4 are electrically shielded by a metal cylinder 5 attached to surround the electrode 4 and upper and lower metal lids 6 to confine plasma. After the inside of the vacuum chamber 1 is evacuated via the exhaust pulp 7, a raw material gas such as silane gas ( SiH4) is introduced and a voltage is applied between the substrate 3, which is heated to a predetermined temperature and rotated by the heater 9, and the counter electrode 4, and plasma is generated by glow discharge, decomposing the raw material gas and dissolving the surface of the substrate 3. An a-8i film is formed to form a photosensitive layer 1-. However, in such an apparatus, in order to form the A-8I film on many substrates at the same time, many substrates must be attached to the support 2 at once, which increases the length of the support and the height of the apparatus. This is undesirable because it increases the amount of electricity and reduces workability, but it does not affect the amount of charge on the photoreceptor.

また、a−8i膜成膜時、a −8iは基体表面以外に
も対向電極の表面や端部、対向電極端部近傍の内壁など
に堆積するが、これらの部位は温度が低くa−8iが粉
末状あるいは細片状で併音し、成膜途上に自重や衝撃に
よって剥離脱落することが多く、これら粉末や細片が基
体表面に飛赦し基体表面のa−Si膜に付着したりa 
−8i$を損傷したりする結果、感光層表面に凹凸など
の欠陥が生じ画像不良の原因となる。
In addition, when forming the a-8i film, a-8i is deposited not only on the substrate surface but also on the surface and end of the counter electrode, the inner wall near the end of the counter electrode, etc., but the temperature of these parts is low and the a-8i is in the form of powder or pieces, and often peels off due to its own weight or impact during film formation, and these powders and pieces fly onto the substrate surface and adhere to the a-Si film on the substrate surface.
As a result of damaging the photosensitive layer, defects such as irregularities occur on the surface of the photosensitive layer, causing image defects.

〔発明の目的〕[Purpose of the invention]

本発明は以上の点に・濫みてなされたものであって、プ
ラズマCVD法により凹凸などの欠陥のない感光層を有
する特注の浸れた感光体を安定して、しかも迅速に瞼童
することが可能な感光体製造疾]准を提供することを目
的とする。
The present invention has been made in view of the above points, and it is possible to stably and quickly form a custom-made immersed photoreceptor having a photosensitive layer free of defects such as irregularities using the plasma CVD method. The purpose is to provide a possible photoconductor manufacturing problem.

〔発明の要点〕[Key points of the invention]

本発明の目的は、真空槽内【配置された支持体に装着さ
れた円筒状導電性基体と対向電極との間に電圧を印加し
てグロー放電を発生させ、真空槽内に導入された原料ガ
スを分解して前記基体上に感光層を形成する感光体製造
装置において、前記支持体が水平軸を中心とする同一円
周上に水平軸と平行に配設され円筒状の基体がその内面
を接触させて装着せしめられる複数個の導電性棒状体で
あり、かつそれぞれの軸を中心として自転しながら水平
軸を中心として公転駆動が可能であり、前記対向′fl
+iが円筒状金属をその円筒軸に平行な平面で切断した
断面円弧状の金属部材であり、かつ前記pv数個の支持
体の形成する円周面の下方に所定の間隔をおいて円周面
と同軸に少なくとも1個配・イされた装置とすることに
よって達成される。
The object of the present invention is to generate a glow discharge by applying a voltage between a cylindrical conductive substrate attached to a support placed in a vacuum chamber and a counter electrode, and to generate a glow discharge from a raw material introduced into the vacuum chamber. In a photoreceptor manufacturing apparatus that forms a photoreceptor layer on the substrate by decomposing a gas, the support is arranged on the same circumference centered on a horizontal axis and parallel to the horizontal axis, and the cylindrical substrate has an inner surface. A plurality of conductive rod-shaped bodies are mounted in contact with each other, and are capable of rotating around their respective axes and revolving around a horizontal axis, and are capable of being driven to revolve around a horizontal axis.
+i is a metal member having an arc-shaped cross section obtained by cutting a cylindrical metal along a plane parallel to the cylindrical axis; This is achieved by using at least one device arranged coaxially with the surface.

〔発明の実施例〕[Embodiments of the invention]

以丁、本発明の実施例を図面を参照して説明する。 Embodiments of the present invention will now be described with reference to the drawings.

第1図は本発明の一実施例の概念図であって1、′X1
図(a)図はX空槽の析面聞を、第1図重重図は装置の
構成を示す。第1図(a)図において、真空411内に
昨秋の支持体13が複数個(図には12個を例示する)
水平軸を中心とする同一円周上に水平・軸と平行に配[
遣されており、これらの支持体13はそれぞれの軸を中
心として矢印Aに示すように自転しながら全体として水
平軸を中心として矢印Bに示すように公転できる。円筒
状の導1住基体12は支持体13にその内面が全面接触
するように装着され、支持体13を介して加熱され所定
温度に制御されながら自転公転せしめられる。対向を擺
14r/′i円筒状金属をその円筒軸に平行な平面で切
断した断面円弧状で長さが支持体13とほぼ同じ金属部
材であり、複数個の支持体13の形成する円周面の外部
下方に所定の間隔をおいて支持体群を取シ囲むように円
周面と同軸に配置されている。真空槽11は他端が原料
ガス供給装丁前に接続されたガス導入口15および他端
が真空排気装置に連結された排気口17を有する。
FIG. 1 is a conceptual diagram of an embodiment of the present invention.
Figure (a) shows the analysis surface of the X empty tank, and Figure 1 shows the structure of the device. In FIG. 1(a), there are a plurality of supports 13 from last fall in the vacuum 411 (12 are illustrated in the figure).
Arranged horizontally and parallel to the axis on the same circumference centered on the horizontal axis [
These supports 13 can rotate around their respective axes as shown by arrows A, and revolve as a whole around a horizontal axis as shown by arrow B. The cylindrical conductive substrate 12 is mounted on a support 13 so that its inner surface is in full contact with the support 13, and is heated through the support 13 and rotated and revolved while being controlled to a predetermined temperature. The opposite side is the metal member 14r/'i, which is a metal member whose cross section is arcuate and approximately the same length as the support 13, obtained by cutting a cylindrical metal along a plane parallel to the cylindrical axis, and the circumference formed by the plurality of supports 13. They are arranged coaxially with the circumferential surface so as to surround the support group at a predetermined interval below the outside of the surface. The vacuum chamber 11 has a gas inlet 15 connected at the other end to a source gas supply source, and an exhaust port 17 connected at the other end to a vacuum evacuation device.

第1図(b)図は第1図(a)図に示す真空槽を有する
&光体製造装置の構成を概念的に示したものであって、
真空、l’1lllは側面から見たところを模式的に示
してあり、支持体13は上下の2個だけ図示し、それぞ
れ4個の基体12が装着された状態を示す。
FIG. 1(b) conceptually shows the configuration of the light body manufacturing apparatus having the vacuum chamber shown in FIG. 1(a),
Vacuum, l'1lll is schematically shown as viewed from the side, and only two supports 13, upper and lower, are shown, each with four bases 12 attached.

支持体13、従って基体12は回転部動機構部24によ
り自転、公転せしめられる。また加熱および温度制御機
構部21により支持体13、従って基体12は所定温度
に加熱制御される。その方式としては、例えば支持体で
ある棒状体内にパイプ状に孔を設は所定@変に制御され
た液状の熱媒体をパイプ内を循環させる方式、あるいは
支持体をヒートパイプで構成し電熱ヒータおよび冷却液
を用いて温度制御する方式などが採られる。20は高周
波(y)を源であり、一端は対向電極14に接続され他
端は接地されている。22は原料ガスボンベの取りつけ
られるガス供給装置であって減圧弁、流量調節計、スト
ップパルプを有し、導入口15を介して真空槽11に連
結されている。19は真空排気装置で排気口17を介し
て真空槽11に連結されているっこのような構[戊の麦
なを用いて、真空槽11内を排気パルプ18を開いて排
気口17を直して排気装置19により排気し、真空槽1
1内へ導入パルプ16を開いて導入口15全通してガス
供給装置22より原料ガス、例えばSiH4を導入する
。その際、原料ガスは導入口15の開口部に支持軸13
に平行に連結された両端の閉じられたパイプ状のガス噴
出部23に設けられた噴出孔から導入されるが、支持軸
、従ってそれに装着されている円筒状基体の軸方向のガ
ス量の分布が均一になるように噴出される。原料ガスの
供給量はガス供給装置22の流ttA節計と排気パルプ
18とにより所定看に調節される。基体12を支持体1
3を介して温度制#機構21により所定温度例えば20
01:に制御し、自転、公転させながら対向電極14と
の間にRF電源20により電圧を印加してグロー放電を
発生させ、原料ガス5iHnを分解してw体12上てa
−8i模を堆積させ感光層とする。このようにして−回
のバッチ処理によって多数個(図示例の場合では4 X
 12 = 48個)の膜厚均一で均直な、感光層を有
する感光体を製造することができる。しかも対向電極が
fJt数個の支持体の形成する円(支)の外部で実4i
的に基体より下方に位償しているので、対向電極上、対
向電極端部および同対向電極端部近傍の槽の内壁に生じ
る原料ガスの分解生成物の粉末あるいは細片が基体表面
に落下付着して基体表面に形成される感光層を損傷した
り、凹凸を生ぜしめたり、汚染したりすることがないの
で、凹凸その1山の欠陥のない均質な感光層を有し画像
欠陥を生じない感光体が得られる。
The support body 13, and hence the base body 12, are caused to rotate and revolve by a rotational movement mechanism 24. Further, the heating and temperature control mechanism section 21 heats and controls the support body 13, and hence the base body 12, to a predetermined temperature. For example, there are two methods for this: a method in which a pipe-shaped hole is formed in a rod-shaped body as a support and a controlled liquid heat medium is circulated through the pipe, or a method in which the support is made up of a heat pipe and an electric heater is used. Also, methods are adopted in which temperature is controlled using coolant. 20 is a source of high frequency (y), one end of which is connected to the counter electrode 14 and the other end of which is grounded. Reference numeral 22 denotes a gas supply device to which a raw material gas cylinder is attached, which has a pressure reducing valve, a flow rate controller, and a stop pulp, and is connected to the vacuum chamber 11 via an inlet 15. Reference numeral 19 denotes a vacuum evacuation device connected to the vacuum chamber 11 through the exhaust port 17. The vacuum chamber 1 is evacuated by the exhaust device 19.
The pulp 16 is opened and a raw material gas, for example, SiH4, is introduced from the gas supply device 22 through the introduction port 15. At that time, the raw material gas is introduced into the support shaft 13 at the opening of the inlet 15.
The distribution of the amount of gas in the axial direction of the support shaft, and hence the cylindrical base attached to it, is introduced from the jet hole provided in the pipe-shaped gas jet part 23 with both ends closed and connected parallel to the support shaft. is ejected evenly. The supply amount of the raw material gas is adjusted at a predetermined time by the flow ttA meter of the gas supply device 22 and the exhaust pulp 18. The base 12 is connected to the support 1
A predetermined temperature, for example, 20
01: While rotating and revolving, a voltage is applied between the counter electrode 14 and the RF power source 20 to generate a glow discharge, and the source gas 5iHn is decomposed and released onto the w body 12.
-8i pattern is deposited to form a photosensitive layer. In this way, a large number of pieces (in the case of the illustrated example, 4
A photoreceptor having a photosensitive layer having a uniform and uniform thickness (12 = 48 pieces) can be manufactured. Moreover, the counter electrode is actually 4i outside the circle (support) formed by several fJt supports.
Since the liquid is distributed below the substrate, powder or fine particles of the decomposition products of the raw material gas generated on the counter electrode, at the end of the counter electrode, and on the inner wall of the tank near the end of the counter electrode fall onto the surface of the substrate. It does not damage the photosensitive layer formed on the substrate surface by adhesion, cause unevenness, or contaminate the photosensitive layer, so it has a homogeneous photosensitive layer without any defects such as unevenness and image defects. A photoreceptor with no color can be obtained.

さらに、本実施例においては棒状の支持体に円筒状基体
の内面が全面接触しているため、支持体表面と基体内面
との間ではグロー放電が起こらず分解生成物の堆積がな
いので、支持体と基体との間の熱伝達は変化せず、基体
上に形成される感光層の膜質の局部的変化も生じなくな
る。
Furthermore, in this example, since the inner surface of the cylindrical substrate is in full contact with the rod-shaped support, no glow discharge occurs between the support surface and the inner surface of the substrate, and there is no accumulation of decomposition products. The heat transfer between the body and the substrate does not change, and local changes in the quality of the photosensitive layer formed on the substrate do not occur.

官2図は本発明の他の実施例の真空槽の概念的断面図で
あり、前述の第1図に示した実施例においてさらに対向
fi#1.25を付加して配置した例である。この対向
慮険25は対向電極14と同様に円筒状金属をその円筒
軸に平行な平面で切断した析面円瓜状で長さは支持体と
ほぼ同等の金属部材であり、復a個の支持体13の形成
する円周の内面上方に円周面と所定の間隔をおいて配置
されている。対向1囁への分解生成物の付着は実質的に
直接放電にさらされる面に生じる。従って対向を極25
においてはその上面に分解生成物が付着することになり
、この付着物が剥離、落下して基体表面に形成される感
光層を損傷し汚染することは少ない。一方、対向電極1
4に加えてさらに対向@唯25を設けたことにより公転
している各基体は常時放磁にさらされるため熱的に安定
になり均質な模が得られ、かつ1個の基体の周囲を円筒
状の対向1[が囲む場合に比してそん色のない成膜速要
を得ることができる。かくして、膜摩均−で構成な、か
つ表面平滑な感光層を有する感光体を短時間に喰産lJ
T能となる。
Figure 2 is a conceptual sectional view of a vacuum chamber according to another embodiment of the present invention, and is an example in which an opposing fi #1.25 is further added to the embodiment shown in Figure 1 above. Like the counter electrode 14, the counter electrode 25 is a metal member in the shape of a cylindrical cone made by cutting a cylindrical metal along a plane parallel to the cylindrical axis, and the length is approximately the same as that of the support. It is arranged above the inner surface of the circumference formed by the support body 13 at a predetermined distance from the circumferential surface. Adhesion of the decomposition products to the opposing surface occurs substantially on the surface directly exposed to the discharge. Therefore, the opposite pole is 25
In this case, decomposition products adhere to the upper surface of the substrate, and this adhered substance rarely peels off and falls, thereby damaging and contaminating the photosensitive layer formed on the surface of the substrate. On the other hand, counter electrode 1
By providing an opposing @ Yui 25 in addition to 4, each revolving base is constantly exposed to magnetic discharge, making it thermally stable and a homogeneous pattern can be obtained. It is possible to obtain a film formation rate that is comparable to that in the case where the opposing faces 1[ of the shape] surround the film. In this way, it is possible to produce a photoreceptor in a short time having a photosensitive layer composed of a smooth film and a smooth surface.
Becomes T-Noh.

なお、さらにこのような円弧状の対向を極を加熱し所定
温度に制御できる機構を設けると、対向1唯からの分解
生成物の剥離、脱落を低減することができ有効である。
Furthermore, it is effective to provide a mechanism that can heat the poles of such arcuate opposing poles and control them to a predetermined temperature, since it is possible to reduce peeling and falling off of decomposition products from the opposing electrodes.

また、対向’tiの構成を生起せしめたい部位以外の電
罹面を微少間隙をおいて遣うようにアース電極を設置し
、基体との間の放電効率を高め、かつ周辺への悪影響を
防止する lことも可能である。
In addition, the ground electrode is installed so that there is a slight gap between the electrolyzed surfaces other than the areas where the opposing 'ti configuration is desired, thereby increasing the discharge efficiency with the base and preventing any negative impact on the surrounding area. It is also possible.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、プラズマCVD法によりa −8iか
らなる感光層を形成する感光体の製造Stにおいて、水
平軸に平行でかつ水平軸を中心とした同一円周上に配置
された複数個の棒状支持体が、それぞれ棒軸のまわりに
自転しながら全体として水平軸を中心として公転できる
ようにし、これに対向して、円筒状金属をその円筒軸に
平行な平面で切断した断面円弧状の金属部材からなる対
向電極を、前記支持体群の形成する円周面の下方に所定
の間隔をおいて円周面と同軸に少なくとも1個配置し、
前記支持体群に装着された多数個の円筒状専心性基体と
の間にグロー放′電を発生させ原料ガスを分解して感光
層を形成する構成とすることにより、凹凸などの欠陥の
ないa−3t感光層を有する特性の優れた感光体を安定
して歩留り良く、シかも迅速に大量生産でき、安価に提
供できることになり、その効果は他めて大きい。
According to the present invention, in the production St of a photoreceptor in which a photoreceptor layer made of a-8i is formed by a plasma CVD method, a plurality of photoreceptors are arranged parallel to a horizontal axis and on the same circumference centered on the horizontal axis. The rod-shaped supports are made to be able to revolve around the horizontal axis as a whole while rotating around the rod axes. at least one counter electrode made of a metal member is arranged coaxially with the circumferential surface at a predetermined interval below the circumferential surface formed by the support group;
By creating a structure in which a glow discharge is generated between the plurality of cylindrical dedicated substrates attached to the support group to decompose the raw material gas and form a photosensitive layer, the photosensitive layer is free from defects such as unevenness. Photoreceptors with excellent characteristics having an a-3T photosensitive layer can be mass-produced quickly and stably at a high yield, and can be provided at low cost, which has an even greater effect.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明による装置の一実施例を示す概念図で、
第1図ta)図は真空槽の原理的断面図であり、第1図
(′b)図は装僅の原理的構成図である。第2図は本発
明の製置の他の実施例の真空槽の原理的断面図であるっ
第3図は従来例の真空槽の原理的断面図である。 11・・・真空槽、12・・・導ル性基体、13・・・
支持体、14・・・対向電極、15・・・ガス導入口、
17・・・排気口、24・・回転駆動機構部。 少ゴマ人弁フ又上 1bo:91+’・シ 第1図 第2図 す 第3 Z
FIG. 1 is a conceptual diagram showing an embodiment of the device according to the present invention.
Figure 1 (ta) is a sectional view of the principle of the vacuum chamber, and Figure 1 ('b) is a diagram of the principle configuration of the vacuum chamber. FIG. 2 is a principle sectional view of a vacuum chamber according to another embodiment of the present invention, and FIG. 3 is a principle sectional view of a conventional vacuum chamber. 11... Vacuum chamber, 12... Conductive substrate, 13...
Support, 14... Counter electrode, 15... Gas inlet,
17...Exhaust port, 24...Rotation drive mechanism section. 1bo: 91+'・shi Figure 1 Figure 2 Figure 3 Z

Claims (1)

【特許請求の範囲】 1)真空槽内に配置された支持体に装着された円筒状導
電性基体と対向電極との間に電圧を印加してグロー放電
を発生させ、前記真空槽内に導入された原料ガスを分解
して前記円筒状導電性基体上に感光層を形成する電子写
真用感光体製造装置において、前記支持体が水平軸を中
心とする同一円周上に水平軸と平行に配設され前記円筒
状導電性基体がその内面を接触させて装着せしめられる
複数個の導電性棒状体であり、かつそれぞれの軸を中心
として自転しながら水平軸を中心として公転駆動が可能
であり、前記対向電極が円筒状金属をその円筒軸に平行
な平面で切断した断面円弧状の金属部材であり、かつ前
記複数個の支持体の形成する円周面の下方に所定の間隔
をおいて円周面と同軸に少くとも1個配置されているこ
とを特徴とする電子写真用感光体製造装置。 2)特許請求の範囲第1項記載の感光体製造装置におい
て、対向電極が複数個の支持体の形成する円周面の内面
上方と外面下方との少なくとも一方に配置されているこ
とを特徴とする電子写真用感光体製造装置。 3)特許請求の範囲第1項記載の感光体製造装置におい
て、円筒状導電性基体を支持体を介して加熱し所定温度
に制御する手段を具備することを特徴とする電子写真用
感光体製造装置。 4)特許請求の範囲第1項記載の感光体製造装置におい
て、対向電極を加熱し所定温度に制御する手段を具備す
ることを特徴とする電子写真用感光体製造装置。
[Claims] 1) Glow discharge is generated by applying a voltage between a cylindrical conductive substrate attached to a support placed in a vacuum chamber and a counter electrode, and the glow discharge is introduced into the vacuum chamber. In an electrophotographic photoreceptor manufacturing apparatus in which a photosensitive layer is formed on the cylindrical conductive substrate by decomposing the raw material gas, the support is arranged parallel to the horizontal axis on the same circumference centered on the horizontal axis. The cylindrical conductive base is a plurality of conductive rod-like bodies arranged so that the inner surfaces thereof are in contact with each other, and the conductive rod-like bodies are rotatable around a horizontal axis while rotating around their respective axes. , the counter electrode is a metal member having an arc-shaped cross section obtained by cutting a cylindrical metal along a plane parallel to the cylindrical axis, and is spaced at a predetermined interval below the circumferential surface formed by the plurality of supports. 1. An electrophotographic photoreceptor manufacturing apparatus characterized in that at least one photoreceptor is arranged coaxially with a circumferential surface. 2) The photoreceptor manufacturing apparatus according to claim 1, characterized in that the counter electrode is disposed above at least one of the inner surface and below the outer surface of the circumferential surface formed by the plurality of supports. Electrophotographic photoreceptor manufacturing equipment. 3) The electrophotographic photoreceptor manufacturing apparatus according to claim 1, further comprising means for heating the cylindrical conductive substrate via a support and controlling the temperature to a predetermined temperature. Device. 4) The electrophotographic photoreceptor manufacturing apparatus according to claim 1, further comprising means for heating the counter electrode and controlling the temperature to a predetermined temperature.
JP27381285A 1985-12-05 1985-12-05 Apparatus for producing electrophotographic sensitive body Pending JPS62133074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27381285A JPS62133074A (en) 1985-12-05 1985-12-05 Apparatus for producing electrophotographic sensitive body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27381285A JPS62133074A (en) 1985-12-05 1985-12-05 Apparatus for producing electrophotographic sensitive body

Publications (1)

Publication Number Publication Date
JPS62133074A true JPS62133074A (en) 1987-06-16

Family

ID=17532903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27381285A Pending JPS62133074A (en) 1985-12-05 1985-12-05 Apparatus for producing electrophotographic sensitive body

Country Status (1)

Country Link
JP (1) JPS62133074A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6155201A (en) * 1997-09-24 2000-12-05 Canon Kabushiki Kaisha Plasma processing apparatus and plasma processing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6155201A (en) * 1997-09-24 2000-12-05 Canon Kabushiki Kaisha Plasma processing apparatus and plasma processing method
US6350497B1 (en) 1997-09-24 2002-02-26 Canon Kabushiki Kaisha Plasma processing method

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