JPH0644141U - Immersion type substrate processing equipment - Google Patents
Immersion type substrate processing equipmentInfo
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- JPH0644141U JPH0644141U JP4149293U JP4149293U JPH0644141U JP H0644141 U JPH0644141 U JP H0644141U JP 4149293 U JP4149293 U JP 4149293U JP 4149293 U JP4149293 U JP 4149293U JP H0644141 U JPH0644141 U JP H0644141U
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- substrate
- processing
- processing liquid
- liquid
- substrate processing
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Abstract
(57)【要約】
【目的】 短時間で処理液の置換が可能で、一連の処理
完了まで基板表面に酸化皮膜が形成されたり、空気中の
不純物が付着するのを阻止し、簡素な構造で表面処理の
迅速性に優れ、かつ、装置の占有床面積を小さくし、乾
燥までの間に基板に付着した液滴に空気中の不純物が溶
解するのを阻止する浸漬型基板処理装置を提供する。
【構成】 基板処理槽１の下部に接続した処理液供給管
３ａより処理液２を供給してその上部よりオーバーフロ
ーさせる。開閉弁８A〜８Eを選択的に開閉制御して複数
種の処理液を各処理液貯溜容器６A〜６Eより順次処理槽
１に供給する。基板搬送装置６６により処理の終了した
基板Ｗを基板処理槽１内から上方に引き上げる。基板処
理槽１の上部のチャンバー８０内を減圧手段４７で減圧
して基板Ｗを乾燥する。
(57) [Summary] [Purpose] The processing solution can be replaced in a short time, and an oxide film is not formed on the substrate surface or impurities in the air are prevented from adhering until a series of processing is completed. Providing an immersion type substrate processing device that excels in surface treatment speed, reduces the floor space occupied by the device, and prevents impurities in the air from dissolving in droplets that have adhered to the substrate before drying. To do. [Structure] The processing liquid 2 is supplied from a processing liquid supply pipe 3a connected to the lower portion of the substrate processing tank 1 and overflows from the upper portion thereof. The on-off valves 8 A to 8 E are selectively opened / closed and a plurality of types of treatment liquids are sequentially supplied to the treatment tank 1 from the treatment liquid storage containers 6 A to 6 E. The substrate W which has been processed by the substrate transfer device 66 is pulled upward from the substrate processing bath 1. The inside of the chamber 80 in the upper part of the substrate processing bath 1 is decompressed by the decompression unit 47 to dry the substrate W.
Description
【０００１】[0001]
この考案は、半導体基板や液晶用ガラス基板等の薄板状の被処理基板（以下単 に基板と称する）を表面処理するのに用いられる浸漬型の基板処理装置に関する ものである。 The present invention relates to an immersion type substrate processing apparatus used for surface-treating a thin substrate to be processed (hereinafter simply referred to as a substrate) such as a semiconductor substrate or a glass substrate for liquid crystal.
【０００２】[0002]
この種の装置としては、従来より例えば図６に示すもの(以下従来例１という) 、あるいは特公平２−１３４５９号公報に開示され、図７に示すもの（以下従来 例２という）が知られている。 従来例１は図６に示すように、処理液１５２中に基板Ｗを浸漬して基板Ｗの表 面処理をなす基板処理槽１５１と、基板処理槽１５１へ純水ＤW、及び複数種の 処理液ＱA・ＱBを供給する複数の処理液貯溜容器１５６A・１５６B、各給液管１５ ３、１５７A、１５７B及び開閉弁１５５、１５８A、１５８Bとから成り、各開閉 弁１５５、１５８A、１５８Bを選択的に開閉制御して、所定量の純水ＤW及び処 理液ＱA、ＱBを基板処理槽１５１内に供給して基板処理槽１５１内で所定濃度の 処理液１５２を調合するように構成されている。なお、図６中の符号Ｃは多数の 基板Ｗを収容する基板収容カセット、１５９は液面レベルを検出するレベルセン サ、１６０はレベル表示器、１６１は排液用ドレンである。As this type of device, for example, a device shown in FIG. 6 (hereinafter referred to as conventional example 1) or a device shown in FIG. 7 (hereinafter referred to as conventional example 2) is known. ing. In the conventional example 1, as shown in FIG. 6, a substrate processing bath 151 for surface-treating a substrate W by immersing the substrate W in a processing liquid 152, pure water D W to the substrate processing bath 151, and a plurality of types of water. processing solution Q a · Q plurality of processing liquid reservoir chamber 156 a · 156 B supplies B, consists of a respective liquid supply pipe 15 3,157 a, 157 B and the on-off valves 155,158 a, 158 B, each opening The valves 155, 158 A and 158 B are selectively opened / closed to supply a predetermined amount of pure water D W and treatment liquids Q A and Q B into the substrate processing bath 151, and the predetermined amount is supplied in the substrate processing bath 151. The processing liquid 152 having a concentration is prepared. Reference numeral C in FIG. 6 is a substrate storage cassette for storing a large number of substrates W, 159 is a level sensor for detecting the liquid level, 160 is a level indicator, and 161 is a drain for drainage.
【０００３】 従来例２は図７に示すように、処理液１０２中に基板Ｗを浸漬して基板Ｗの表 面処理をなす基板処理槽１０１と、処理液１０２を基板処理槽１０１内へ供給す る処理液供給部１０４とから成り、処理液供給部１０４は、基板処理槽１０１の 上流側でそれぞれ処理液導入管１０７Ａ〜１０７Ｄ及び処理液導入弁１０８Ａ〜 １０８Ｄを介して処理液供給管１０３に連通した複数種の処理液貯溜容器１０６ Ａ 〜１０６Dとを具備して成り、各処理液導入弁１０８A〜１０８Dを選択的に開 閉制御して、所定の処理液ＱA〜ＱDを処理液給液管へ導入するように構成されて いる。これら処理液貯溜容器１０６A〜１０６Dの中、例えば処理液貯溜容器１０ ６Aには高温の硫酸、１０６Bにはフッ化水素酸のようなエッチング剤、１０６C には超純水などが貯溜されている。そして、この基板処理槽１０１は複数種の表 面処理毎に処理液１０２の置換が可能な密閉型の処理槽として構成されている。 なお符号１１１は排液用ドレンである。In the conventional example 2, as shown in FIG. 7, the substrate W is immersed in the treatment liquid 102 to perform the surface treatment of the substrate W, and the treatment liquid 102 is supplied into the substrate treatment tank 101. Processing liquid supply unit 104, and the processing liquid supply unit 104 is provided on the upstream side of the substrate processing bath 101, respectively.A~ 107DAnd processing liquid introduction valve 108A~ 108DPlural kinds of processing liquid storage containers 106 communicating with the processing liquid supply pipe 103 via A ~ 106DAnd each processing liquid introduction valve 108.A~ 108DTo selectively open and close theA~ QDIs introduced into the processing liquid supply pipe. These processing liquid storage containers 106A~ 106DOf the processing liquid storage container 10 6AHot sulfuric acid, 106BIs an etchant such as hydrofluoric acid, 106C Ultrapure water is stored in. The substrate processing bath 101 is configured as a closed type processing bath in which the processing liquid 102 can be replaced for each of a plurality of types of surface treatments. Reference numeral 111 is a drain for drainage.
【０００４】[0004]
上記従来例１は、所定量の純水ＤW及び処理液ＱA〜ＱBを基板処理槽１５１内 に供給して基板処理槽５１内で所定濃度の処理液１５２を調合するように構成さ れているため、次のような難点がある。 複数種の表面処理毎に処理槽１５１内の処理液１５２を置換する場合に、均 一な混合処理液となるのに一定の時間を必要とするため、迅速な表面処理をす ることは出来ない。また、その間処理槽１５１内の基板Ｗに不均一な処理液１ ５２が触れることになるため、均一な表面処理を行うことができない。 基板処理槽１５１内の処理液１５２の置換に際して、基板処理槽１５１内の 処理液を全部排出することになるため、例えばフッ酸処理した基板Ｗが空気に 触れると、その表面に酸化皮膜が形成される等の不都合が生じる。 別に乾燥装置を設ける必要があるため、占有床面積が大きくなる。 基板処理槽から乾燥装置まで基板を搬送する必要があるため、処理に時間が かかる。 基板処理槽から乾燥装置まで基板を搬送する必要があるため、搬送中に基板 に付着した液滴に空気中の不純物が溶解する。The above-mentioned conventional example 1 is configured to supply a predetermined amount of pure water D W and processing liquids Q A to Q B into the substrate processing bath 151 to prepare a processing liquid 152 having a predetermined concentration in the substrate processing bath 51. Therefore, there are the following difficulties. When substituting the treatment liquid 152 in the treatment tank 151 for each of a plurality of types of surface treatment, it takes a certain amount of time for the treatment liquid to become a uniform mixed treatment liquid, so that rapid surface treatment cannot be performed. Absent. In addition, since the non-uniform processing liquid 152 contacts the substrate W in the processing tank 151 during that time, uniform surface treatment cannot be performed. When the processing solution 152 in the substrate processing bath 151 is replaced, the processing liquid in the substrate processing bath 151 is completely discharged. For example, when the hydrofluoric acid-treated substrate W comes into contact with air, an oxide film is formed on the surface of the substrate W. Inconvenience such as being caused occurs. Since it is necessary to provide a separate drying device, the occupied floor area becomes large. Since it is necessary to transfer the substrate from the substrate processing tank to the drying device, it takes time to process. Since it is necessary to transfer the substrate from the substrate processing tank to the drying device, impurities in the air dissolve in the droplets that adhere to the substrate during transfer.
【０００５】 これに対して従来例２は、基板処理槽１０１が複数種の表面処理毎に処理液 １０２の置換が可能な密閉型の処理槽として構成され、その密閉型基板処理槽１ ０１内へ処理液を供給して、密閉したまま基板Ｗを表面処理するので上記の ような問題はない。また、密閉型基板処理槽１０１内にメタノール等の高温有機 溶剤蒸気を導入することにより、基板処理槽１０１内で基板の乾燥を行うことも 可能となる。On the other hand, in Conventional Example 2, the substrate processing bath 101 is configured as a sealed processing bath capable of replacing the processing liquid 102 for each of a plurality of types of surface treatments. Since the processing liquid is supplied to the substrate W and the substrate W is surface-treated while being hermetically sealed, there is no problem as described above. Further, by introducing a high temperature organic solvent vapor such as methanol into the closed type substrate processing tank 101, it becomes possible to dry the substrate in the substrate processing tank 101.
【０００６】 しかしながら、この従来例２においても、次のような難点がある。 密閉型の基板処理槽１０１内へ基板Ｗを装填し及び取り出す際に、一旦処理 槽１０１内の処理液１０２を全部排出し、基板取出し口を自動開閉する等の操 作機構が不可欠となる。従って、表面処理の迅速性に欠ける。 基板を乾燥するためには、基板処理槽１０１内に基板を保持したまま基板処 理槽１０１内の処理液１０２を排出する必要があるが、このとき処理液１０２ の液面付近に浮遊するパーティクル等が基板に再付着し、基板が汚染する。 基板を乾燥するためには、メタノール等の有機溶剤蒸気やその他の蒸気を供 給するための蒸気供給手段が必要となり、装置が複雑化する。 本考案はこのような事情を考慮してなされたもので、上記〜の難点を解消 することを技術課題とする。However, the conventional example 2 also has the following drawbacks. When loading and unloading the substrate W into and from the closed type substrate processing bath 101, an operating mechanism such as once discharging the processing liquid 102 in the processing bath 101 and automatically opening and closing the substrate outlet is indispensable. Therefore, the speed of the surface treatment is lacking. In order to dry the substrate, it is necessary to discharge the processing liquid 102 in the substrate processing bath 101 while holding the substrate in the substrate processing bath 101. At this time, particles floating near the liquid surface of the processing liquid 102 are discharged. Etc. reattach to the substrate and contaminate the substrate. In order to dry the substrate, vapor supply means for supplying organic solvent vapor such as methanol and other vapors is required, which complicates the apparatus. The present invention has been made in consideration of such circumstances, and an object of the present invention is to solve the above-mentioned problems.
【０００７】[0007]
請求項１に記載の考案は、前記難点を解決するものとして、以下のように構成 される。 即ち、下部に接続した処理液供給管より処理液を供給してその上部よりオーバ ーフローさせるように構成した基板処理槽と、 前記処理液供給管に開閉弁を介して接続された複数種の処理液貯溜容器と、前 記開閉弁を選択的に開閉制御して複数種の処理液を各処理液貯溜容器より順次処 理槽に供給する処理液供給手段とを備えて成る処理液供給部と、 処理の終了した基板を基板処理槽内から上方に引き上げる基板搬送装置と、 を具備して成る浸漬型基板処理装置である。 The invention as set forth in claim 1 is configured as follows to solve the above-mentioned difficulties. That is, a substrate processing tank configured to supply a processing liquid from a processing liquid supply pipe connected to a lower portion and to overflow the processing liquid from an upper portion thereof, and a plurality of types of processing connected to the processing liquid supply pipe via an opening / closing valve. A processing liquid supply unit comprising a liquid storage container and processing liquid supply means for selectively opening / closing the opening / closing valve to supply a plurality of types of processing liquid to the processing tank from each processing liquid storage container in sequence. An immersion type substrate processing apparatus comprising: a substrate transfer device that pulls up a processed substrate upward from the substrate processing bath.
【０００８】 また、請求項２に記載の考案は、以下のように構成される。 即ち、請求項１に記載の浸漬型基板処理装置において、基板処理槽の上部を密 閉可能に構成したチャンバーと、前記チャンバー内を減圧する減圧手段とを具備 したものである。The invention according to claim 2 is configured as follows. That is, the immersion type substrate processing apparatus according to claim 1 is provided with a chamber in which the upper part of the substrate processing bath can be closed tightly, and a decompression means for decompressing the inside of the chamber.
【０００９】[0009]
【作 用】 請求項１の考案では、所定の基板処理を実行するために、前記開閉弁を選択的 に開閉制御することにより、複数の処理液貯溜容器より各処理液が順次導出され る。これらの処理液は、基板処理槽の下部に接続した処理液供給管より基板処理 槽内に供給され、その上部よりオーバーフローする。その間に基板の表面処理が なされる。 表面処理を終えた基板は、基板搬送装置により処理液がオーバーフローする処 理槽内から所定速度で引き上げられる。このとき、処理液の表面張力により、そ の表面に処理液液滴がほとんど付着することなく基板を取り出すことができる。 なお基板の引き上げ時には処理液はオーバーフローしており、処理液液面付近 にパーティクル等が浮遊することはないため、基板が引き上げ時に汚染されるこ とはない。According to the first aspect of the present invention, in order to execute the predetermined substrate processing, the opening / closing valve is selectively opened / closed, so that the processing liquids are sequentially discharged from the plurality of processing liquid storage containers. These processing liquids are supplied into the substrate processing tank from the processing liquid supply pipe connected to the lower portion of the substrate processing tank, and overflow from the upper portion thereof. Meanwhile, the surface treatment of the substrate is performed. The substrate after the surface treatment is pulled up at a predetermined speed from the treatment tank in which the treatment liquid overflows by the substrate transfer device. At this time, due to the surface tension of the treatment liquid, the substrate can be taken out with almost no treatment liquid droplets adhering to the surface. Since the processing liquid overflows when the substrate is pulled up and particles and the like do not float near the surface of the processing liquid, the substrate is not contaminated when it is pulled up.
【００１０】 これにより、基板処理槽から乾燥装置まで基板を搬送する必要はなくなり、基 板の処理時間が短縮できる。また、基板処理槽から乾燥装置まで基板を搬送する 必要がなくなり、搬送中に基板に付着した液滴に空気中の不純物が溶解すること もなくなる。 また、基板処理槽内の処理液をオーバーフローさせることにより、基板処理槽 内の処理液を全部排出しなくとも複数種の表面処理毎に処理液の置換が可能であ り、一連の表面処理が完了するまで基板が空気に触れることはない。従って、基 板表面に酸化皮膜が形成されたり、空気中の不純物が付着したりするおそれはな い。さらには、基板処理槽内の処理液を全部排出しなくても基板の装填や取り出 しができる。As a result, it is not necessary to transfer the substrate from the substrate processing tank to the drying device, and the substrate processing time can be shortened. Further, it is not necessary to transfer the substrate from the substrate processing tank to the drying device, and the impurities in the air are not dissolved in the droplets attached to the substrate during the transfer. Also, by overflowing the processing liquid in the substrate processing bath, it is possible to replace the processing liquid for each of multiple types of surface treatments without exhausting all the processing liquid in the substrate processing bath. The substrate is not exposed to air until it is complete. Therefore, there is no risk that an oxide film will be formed on the substrate surface or that impurities in the air will adhere. Furthermore, the substrate can be loaded and unloaded without discharging all the processing liquid in the substrate processing bath.
【００１１】 また、請求項２の考案では基板処理槽の上部が密閉可能に構成したチャンバー で覆われており、このチャンバー内を減圧手段で減圧することにより、基板の液 切り乾燥を促進する。つまり、表面処理を終えた基板を処理槽内から上方に引き 上げる際には、前述したように、基板の表面に液滴がほとんど付着することはな い。そして、チャンバー内を減圧することにより、基板の表面にわずかに付着し ていた液滴が蒸発して、液切り乾燥を一層促進する。Further, according to the second aspect of the invention, the upper portion of the substrate processing bath is covered with a chamber that can be hermetically sealed, and by depressurizing the inside of the chamber with the depressurizing means, the drying and drying of the substrate is promoted. That is, when the substrate which has been subjected to the surface treatment is pulled upward from the inside of the processing bath, almost no droplets adhere to the surface of the substrate as described above. Then, by depressurizing the inside of the chamber, the liquid droplets slightly adhering to the surface of the substrate evaporate, further promoting the draining and drying.
【００１２】[0012]
図１は本考案の実施例を示す概要図である。 この浸漬型基板処理装置は、処理液２中に基板Ｗを浸漬して基板Ｗの表面処理 をなす基板処理槽１と、処理液供給管３ａを介して処理液２を基板処理槽１内へ 供給する処理液供給部４と、処理液排出部４０とから成る。 FIG. 1 is a schematic diagram showing an embodiment of the present invention. This immersion type substrate processing apparatus includes a substrate processing tank 1 for immersing a substrate W in a processing liquid 2 for surface treatment of the substrate W, and a processing liquid 2 into the substrate processing tank 1 through a processing liquid supply pipe 3a. It comprises a processing liquid supply unit 4 for supplying and a processing liquid discharge unit 40.
【００１３】 基板処理槽１は、石英ガラス製の側面視略Ｖ字状（２０度以下の広がり形状） に、平面視略矩形状に形成され、その下部に処理液を供給する処理液供給管３ａ を連結して成り、基板処理槽１内に処理液２の均一な上昇流を形成して基板Ｗの 表面処理をするとともに、処理液２を複数種の表面処理毎に、迅速に置換し得る オーバーフロー槽として構成されている。 そして、上記基板処理槽１は処理液排出部４０を構成する排液槽４１内に設け られ、オーバーフローした処理液２は排液管４２を介して排液ドレン４３へ流下 するように構成されている。基板処理槽１内の基板Ｗは、仮想線で示す基板搬送 装置６６により挟持搬送される。 なお、上記基板処理槽１は石英ガラス製に限らず、例えば、処理液として石英 ガラスを腐食させてしまうフッ酸等を用いる場合には、これに耐食性を有する四 フッ化エチレン樹脂等の樹脂製材料で形成したものでも良い。The substrate processing tank 1 is made of quartz glass and has a substantially V shape in a side view (spread shape of 20 degrees or less) and a substantially rectangular shape in a plan view, and a processing liquid supply pipe for supplying a processing liquid to a lower portion thereof. 3a is connected to form a uniform upward flow of the processing liquid 2 in the substrate processing bath 1 to surface-treat the substrate W, and the processing liquid 2 is rapidly replaced after every plural types of surface treatments. It is configured as an overflow tank. The substrate processing tank 1 is provided in the drainage tank 41 that constitutes the processing liquid discharge unit 40, and the overflowed processing liquid 2 is configured to flow down to the drainage drain 43 through the drainage pipe 42. There is. The substrate W in the substrate processing bath 1 is nipped and conveyed by a substrate conveyance device 66 shown by an imaginary line. The substrate processing tank 1 is not limited to quartz glass, and for example, when hydrofluoric acid or the like that corrodes quartz glass is used as the processing liquid, it is made of a resin such as tetrafluoroethylene resin that has corrosion resistance. It may be formed of a material.
【００１４】 上記処理液供給管３ａは、純水給液管３の下流部分を構成し、純水と処理液の 供給路を兼ねる。この処理液供給管３ａには、給排液切換弁１３、スタティック ミキサー１４、及び複数の開閉弁８Ａ〜８Ｅを具備する開閉弁連結管１６が接続 されている。また、純水給液管３には、上流側に向けて純水フィルタ２５、純水 圧力測定器２６、開閉弁２７、純水加熱部２８が付設配置され、所定温度に加熱 した純水ＤWを供給する純水の通路として構成されている。なお、純水ＤWは基板 の表面酸化を防ぐうえで、脱酸素処理を施したものを用いる方がより好ましい。 上記給排液切換弁１３は純水ＤWや処理液２を基板処理槽１へ供給し、必要に 応じて基板処理槽１内の処理液２を排液管４２を介して排液ドレン４３へ排出す るように構成されている。The processing liquid supply pipe 3a constitutes a downstream portion of the pure water supply liquid pipe 3 and also serves as a supply path for the pure water and the processing liquid. The processing liquid supply pipe 3a is connected to a supply / discharge liquid switching valve 13, a static mixer 14, and an open / close valve connecting pipe 16 including a plurality of open / close valves 8A to 8E. Further, a pure water filter 25, a pure water pressure measuring device 26, an open / close valve 27, and a pure water heating unit 28 are additionally provided in the pure water supply pipe 3 toward the upstream side, and the pure water D heated to a predetermined temperature D It is configured as a pure water passage for supplying W. The pure water D W is more preferably deoxidized in order to prevent surface oxidation of the substrate. The supply / discharge liquid switching valve 13 supplies the deionized water D W or the processing liquid 2 to the substrate processing tank 1 and, if necessary, the processing liquid 2 in the substrate processing tank 1 via the drain pipe 42 to the drain drain 43. It is configured to discharge to.
【００１５】 スタティックミキサー１４は、例えば図２に示すように、ミキサー管路１４ａ 内に孔あきねじり板１４ｂを固定し、純水ＤWと処理液ＱA〜ＱEとを均一に混合 するように構成されている。なお、このスタティックミキサーに代えて他の混合 器を用いても良く、管路が十分に長ければかかる混合器を省くことも出来る。 上記開閉弁連結管１６は処理液供給部４の複数の開閉弁８A〜８Eを連結したも のであり、詳細については後述する。As shown in FIG. 2, for example, the static mixer 14 fixes a perforated twisted plate 14b in a mixer pipe line 14a so that the pure water D W and the processing liquids Q A to Q E are uniformly mixed. Is configured. Other mixers may be used instead of this static mixer, and if the pipe line is sufficiently long, such mixer can be omitted. The open / close valve connecting pipe 16 connects the plurality of open / close valves 8 A to 8 E of the processing liquid supply unit 4, and the details will be described later.
【００１６】 前記処理液供給部４は、複数種の処理液ＱA〜ＱEを貯溜した処理液貯溜容器６ A 〜６Eと、基板処理槽１の上流側で処理液供給管３ａにそれぞれ処理液貯溜容器 ６A〜６Eを連通する処理液導入管７A〜７Eと、各処理液導入管７A〜７Eを開閉す る開閉弁８A〜８Eと、処理液ＱA〜ＱEを圧送する圧送ポンプ１５A〜１５E等から 成る処理液供給手段とから成り、圧送ポンプ１５A〜１５E及び開閉弁８A〜８Eを 適宜選択的に制御して、所定の処理液ＱA〜ＱEを処理液供給管３ａへ圧送するよ うに構成されている。The processing liquid supply unit 4 is provided with a plurality of types of processing liquids Q.A~ QEProcessing liquid storage container 6 that stores A ~ 6EAnd a processing liquid storage container 6 in the processing liquid supply pipe 3a on the upstream side of the substrate processing tank 1.A~ 6ETreatment liquid introducing pipe 7 communicating withA~ 7EAnd each processing liquid introducing pipe 7A~ 7EOpen / close valve 8 for opening / closingA~ 8EAnd processing liquid QA~ QEPump 15 for pumpingA~ 15EAnd a processing liquid supply means including a pressure feed pump 15A~ 15EAnd open / close valve 8A~ 8ETo selectively control the processing liquid QA~ QEIs pressure-fed to the processing liquid supply pipe 3a.
【００１７】 上記開閉弁８A〜８Eは、図１〜図３で示すように、スタティックミキサー１４ の上流側に配置した開閉弁連結管１６に固定され、この開閉弁連結管１６を介し て処理液供給管３ａと連通連結されている。 なお図２は開閉弁８A〜８Eと開閉弁連結管１６との連結状態を示す要部の背面 図、図３は図２のIII−III線矢視断面図である。As shown in FIGS. 1 to 3, the on-off valves 8 A to 8 E are fixed to an on-off valve connecting pipe 16 arranged on the upstream side of the static mixer 14, and via the on-off valve connecting pipe 16. It is connected to the processing liquid supply pipe 3a. Note Figure 2 is a rear view of a main portion showing a connection state between the on-off valve connecting pipe 16 and the on-off valve 8 A to 8 E, FIG. 3 is a III-III cross-sectional view taken along line of FIG.
【００１８】 この開閉弁８Aは、図３で示すように、弁本体８０内に処理液導入室８１と弁 駆動室８２を区画形成し、処理液導入室８１と弁駆動室８２に亙り弁軸８３を貫 通し、処理液導入室８１に処理液導入管７Aを接続するとともに、処理液導入室 ８１内では弁軸８３の先端部に弁体８４ａを固定して、弁体８４ａを導入弁連結 管１６に形成した弁座８４ｂで受け止め、弁駆動室８２内では弁軸８３にエアピ ストン８５を固定して圧縮バネ８６でエアピストン８５を閉弁側に付勢するとと もに、圧縮エアＡでエアピストン８５を開弁操作し、処理液ＱAを所定量だけ純 水給液管路３ａ内へ圧送するように構成されている。As shown in FIG. 3, the opening / closing valve 8 A defines a processing liquid introducing chamber 81 and a valve driving chamber 82 in the valve body 80, and the valve is provided between the processing liquid introducing chamber 81 and the valve driving chamber 82. Through the shaft 83, the treatment liquid introduction pipe 7 A is connected to the treatment liquid introduction chamber 81, and in the treatment liquid introduction chamber 81, the valve body 84a is fixed to the tip of the valve shaft 83 to introduce the valve body 84a. The valve seat 84b formed in the valve connecting pipe 16 receives it, and in the valve drive chamber 82, the air piston 85 is fixed to the valve shaft 83 and the compression spring 86 urges the air piston 85 to the valve closing side, and the compression is performed. The air piston 85 is opened by the air A, and the treatment liquid Q A is pressure-fed by a predetermined amount into the pure water supply pipe 3a.
【００１９】 この実施例では、弁体８４ａを開閉弁連結管１６に形成した弁座８４ｂで受け 止めるように構成したので、弁体８４ａと純水給液管路３ａとの間の空間がなく なるため、各開閉弁８A・８Bを閉じた場合、処理液ＱAの液切れが良くなり、処理 液供給管３ａに不要な処理液が長時間混入することはなくなり、純水ＤWの供給 量に対する処理液ＱAの供給量を正確に制御して所定の処理液濃度に調合するこ とができる。しかも、純水が停留してバクテリヤが発生することもなくなる。 なお、第３図中の符号８２ａは圧縮エアＡの出入り口、８２ｂはエアピストン ８５の作動に伴い弁駆動室８２内へエアを出入りさせるための連通口、８７は処 理液封止用ベローズ管である。これらの開閉弁８A〜８Eは圧縮エアＡで作動する ものとして例示したが、適宜電磁開閉弁等を用いることもできる。In this embodiment, since the valve body 84a is configured to be received by the valve seat 84b formed in the on-off valve connecting pipe 16, there is no space between the valve body 84a and the pure water supply pipe line 3a. becomes therefore, when closed the valves 8 a · 8 B, the better the liquid out of the processing solution Q a, unnecessary processing liquid in the processing liquid supply pipe 3a is not be incorporated for a long time, pure water D W It is possible to accurately control the supply amount of the treatment liquid Q A with respect to the supply amount of the treatment liquid and to prepare a predetermined treatment liquid concentration. Moreover, pure water does not stay and bacteria are not generated. In FIG. 3, reference numeral 82a is an inlet / outlet port for compressed air A, 82b is a communication port for letting air into and out of the valve drive chamber 82 in accordance with the operation of the air piston 85, and 87 is a bellows pipe for sealing the processing liquid. Is. Although these on-off valves 8 A to 8 E are illustrated as being operated by the compressed air A, electromagnetic on-off valves or the like can be used as appropriate.
【００２０】 前記圧送ポンプ１５A〜１５E等から成る処理液供給手段は、複数種の表面処理 毎の処理液供給量を設定入力する図示しない設定入力部を具備して成り、あらか じめ入力された表面処理プログラム、及び設定入力された処理液供給量に基づい て開閉弁８A〜８Eを図示しない弁駆動回路を介して開閉制御するとともに、後述 するポンプ制御手段２３を介して圧送ポンプ１５A〜１５Eを駆動制御するように 構成されている。The treatment liquid supply means including the pressure feed pumps 15 A to 15 E is provided with a setting input unit (not shown) for setting and inputting the treatment liquid supply amount for each of a plurality of types of surface treatments. The opening / closing valves 8 A to 8 E are opened / closed by a valve drive circuit (not shown) on the basis of the input surface treatment program and the set input amount of the treatment liquid, and pressure-transmitted by a pump control means 23 described later. It is configured to drive and control the pumps 15 A to 15 E.
【００２１】 図４は一種類の処理液ＱAの供給部を示す概要図であり、各処理液導入管７ａ には上流側へ向かって順次、三方弁１７A、処理液フィルタ１８A及びポンプ吸液 手段３０、マグネット式圧送ポンプ１５A、処理液ＱAの流通の有無を検出する流 通検出器１９が付設配置されている。 ポンプ制御手段２３は、図４の各処理液導入管７Aに付設された処理液供給量 測定器２０Aの出力信号ＫAを受けて、表面処理毎にあらかじめ設定された処理液 供給量に対応して圧送ポンプ１５Aの圧送力を変調するように構成されており、 各表面処理に応じて純水ＤW中の処理液ＱA〜ＱEを所定濃度に調合することがで きる。FIG. 4 is a schematic diagram showing a supply unit for one type of treatment liquid Q A , in which the three-way valve 17 A , the treatment liquid filter 18 A, and the pump are sequentially provided to each treatment liquid introduction pipe 7 a in the upstream direction. A liquid suction means 30, a magnet type pressure feed pump 15 A , and a flow detector 19 for detecting the presence or absence of flow of the treatment liquid Q A are additionally provided. The pump control means 23 receives the output signal K A of the processing liquid supply amount measuring device 20 A attached to each processing liquid introduction pipe 7 A in FIG. 4, and makes the processing liquid supply amount preset for each surface treatment. Correspondingly, the pumping force of the pumping pump 15 A is configured to be modulated, and the treatment liquids Q A to Q E in the pure water D W can be mixed to a predetermined concentration according to each surface treatment.
【００２２】 この処理液供給量測定器２０Aは、三方弁１７Aに付設した圧力トランスデュー サ２１ａと、圧力トランスデューサ２１ａの検出信号を受けてアナロク信号Ｖに 変換するとともに、この処理液供給圧を表示する圧力計２１ｂとから成り、ポン プ制御手段２３は制御信号Ｊに基づき処理液供給圧信号Ｖを変調する調節器２４ ａと、調節器２４ａからの信号を受けてポンプ制御信号を出力するポンプ駆動回 路２４ｂとから成り、マグネット式圧送ポンプ１５Ａを正確に駆動制御して、あ らかじめ設定した処理液供給量Ｑを供給するように構成されている。The processing liquid supply amount measuring device 20 A receives a detection signal from the pressure transducer 21 a attached to the three-way valve 17 A and the pressure transducer 21 a and converts it into an analog signal V. The pump control means 23 outputs a pump control signal by receiving a signal from the regulator 24a for modulating the processing liquid supply pressure signal V based on the control signal J and a signal from the regulator 24a. consists of a pump drive circuits 24b to the magnet type pressure pump 15 a to precisely drive control, and is configured to supply nitrous et beforehand setting the processing liquid supply amount Q.
【００２３】 ちなみに、本実施例では基板の拡散処理の前段の洗浄処理として、次のよう なプログラムに基づいて一連の表面処理を実行することができる。 ステップ１：純水＋ＱA＋ＱE ステップ２：純水 ステップ３：純水＋ＱB ステップ４：純水 ステップ５：純水５＋ＱC＋ＱE ステップ６：純水（終了）By the way, in the present embodiment, as a cleaning process before the diffusion process of the substrate, a series of surface processes can be executed based on the following program. Step 1: pure water + Q A + Q E Step 2: pure water Step 3: purified water + Q B Step 4: pure water Step 5: pure water 5 + Q C + Q E Step 6: pure water (End)
【００２４】 本実施例では、マグネット式圧送ポンプ１５Ａが自吸式でないために、ポンプ 吸液手段３０が付設されいてる。このポンプ吸液手段３０は、図４で示すように 、吸液管３１の一端をポンプ吐出側の微粒子除去用の処理液フィルタ１８Ａに接 続するとともに、他端をアスピレータ３４に接続し、アスピレータ３４に上水ＣW を流通させることにより、吸液管３１内を負圧にして、圧送ポンプ１５Ａに処理 液ＱＡを導入するように構成されている。なお、このとき三方弁１７Ａは完全に 閉とする。In this embodiment, since the magnet type pressure pump 15 A is not a self-priming type, a pump liquid suction means 30 is attached. As shown in FIG. 4, this pump liquid suction means 30 connects one end of a liquid suction pipe 31 to a processing liquid filter 18 A for removing fine particles on the pump discharge side, and connects the other end to an aspirator 34, By circulating the clean water C W through the aspirator 34, the inside of the liquid suction pipe 31 is made to have a negative pressure, and the treatment liquid Q A is introduced into the pressure pump 15 A. At this time the three-way valve 17 A is fully closed.
【００２５】 上記圧送ポンプ１５Aに処理液ＱAが導入されたか否かは、それぞれ処理液供給 管７A及び吸液管３１に付設された流通検出器１９及び３２によって自動的に検 出され、吸液完了とともに開閉弁３３、３５が閉じられる。その後圧送ポンプ１ ５Aをあらかじめ始動して三方弁１７Aを戻り管６ａ側に開とし、三方弁１７A及 び戻り管６ａを介して処理液フィルタ１８Ａから三方弁１７Aに至るまでの処理 液供給管７A内のエア抜きをしておく。 なお、圧送ポンプ１５Aが自吸式の場合には、上記のようなポンプ吸液手段３ ０は不要である。また、圧送ポンプ１５A〜１５Eはマグネットポンプに限らず、 適宜流量調節可能なポンプであれば良い。Whether or not the treatment liquid Q A has been introduced into the pressure pump 15 A is automatically detected by the flow detectors 19 and 32 attached to the treatment liquid supply pipe 7 A and the liquid suction pipe 31, respectively. The on-off valves 33 and 35 are closed when the liquid absorption is completed. After that, the pressure feed pump 15 A is started in advance to open the three-way valve 17 A to the return pipe 6 a side, and the treatment from the treatment liquid filter 18 A to the three-way valve 17 A is performed via the three-way valve 17 A and the return pipe 6 a. Remove air from the liquid supply pipe 7 A. When the pump 15 A is of the self-priming type, the pump liquid absorbing means 30 as described above is unnecessary. Further, the pressure pumps 15 A to 15 E are not limited to magnet pumps, and may be pumps capable of appropriately adjusting the flow rate.
【００２６】 図５は本考案に係る基板処理槽１の周辺の要部縦断面図である。 この実施例では、単一の基板処理槽１内で複数種の一連の表面処理を行うとと もに、表面処理を終えた基板Ｗを処理槽１より所定速度で引き上げることにより 、処理槽１の上部で基板Ｗの乾燥を行うことを意図したものである。 この実施例は、排液槽４１の上方を密閉可能なチャンバー８０で覆い、排液管 ４２に減圧手段４７と連通する排気管４５を接続するとともに、排液管４２に開 閉弁４６を設けて成り、チャンバー８０内を減圧手段４７で減圧して、基板の乾 燥を促進するように構成されている。FIG. 5 is a vertical cross-sectional view of the main part around the substrate processing tank 1 according to the present invention. In this embodiment, a series of surface treatments of a plurality of types are performed in a single substrate processing bath 1, and the substrate W that has been subjected to the surface treatment is pulled up from the processing bath 1 at a predetermined speed. It is intended to dry the substrate W on the upper part of the. In this embodiment, the upper portion of the drainage tank 41 is covered with a hermetically sealed chamber 80, the drainage pipe 42 is connected to an exhaust pipe 45 communicating with the pressure reducing means 47, and the drainage pipe 42 is provided with an open / close valve 46. The chamber 80 is decompressed by the decompression means 47 to accelerate the drying of the substrate.
【００２７】 この装置で基板の乾燥を行うには、次のようにする。 先ず、基板搬送装置を構成する基板保持具６６により、処理を終えた基板Ｗを 所定速度（約１０mm/sec）で引き上げることにより、処理液２がオーバフローす る処理槽１内から基板Ｗを取り出す。このとき、処理液２の表面張力により、そ の表面に処理液２の液滴がほとんど付着することなく、基板Ｗを取り出すことが できる。次に三方弁１３を操作して、処理液２を基板処理槽１から排液管４２を 介して排出し、その後各弁１３及び４６を閉じて、排気管４５を介して減圧手段 ４７でチャンバー８０内を約７５０〜７７０mmhg程度まで減圧する。これにより 、基板Ｗの表面に僅かに付着していた液滴を蒸発させて、液切り乾燥をさらに促 進することができる。The substrate is dried by this apparatus as follows. First, the substrate W is taken out of the processing tank 1 in which the processing liquid 2 overflows by pulling up the processed substrate W at a predetermined speed (about 10 mm / sec) by the substrate holder 66 which constitutes the substrate transfer device. . At this time, due to the surface tension of the processing liquid 2, the substrate W can be taken out with almost no droplets of the processing liquid 2 adhering to the surface thereof. Next, the three-way valve 13 is operated to discharge the processing liquid 2 from the substrate processing bath 1 via the drain pipe 42, and then the valves 13 and 46 are closed, and the decompression means 47 is connected via the exhaust pipe 45 to the chamber. The pressure inside 80 is reduced to about 750 to 770 mmhg. As a result, the liquid droplets slightly attached to the surface of the substrate W can be evaporated to further accelerate the draining and drying.
【００２８】 なお、上記実施例においては、基板Ｗを基板保持具６６により直接保持してそ の処理を行うカセットレスタイプの基板処理槽１を採用した処理装置について説 明したが、基板をカセットに収容した状態で搬送してその処理を行うカセットタ イプの処理装置についても、本考案を適用することができる。In the above embodiment, the processing apparatus employing the cassette-less type substrate processing tank 1 for directly holding the substrate W by the substrate holder 66 and performing the processing has been described. The present invention can also be applied to a cassette type processing apparatus that carries the material in the state of being housed in the container and performs the processing.
【００２９】[0029]
請求項１の考案では、基板処理槽の下部に接続した処理液供給管より処理液を 供給してその上部よりオーバーフローさせ、開閉弁を選択的に開閉制御して複数 種の処理液を各処理液貯溜容器より順次処理槽に供給し、処理の終了した基板を 基板搬送装置により基板処理槽内から上方に引き上げるようにしたので、次の効 果を奏する。 複数種の表面処理毎に基板処理槽内の処理液を置換するにあたり、基板処理 槽の下部に接続した処理液供給管より混合処理液を供給してオーバーフローさ せるようにしたので、従来例１に比較して短時間で処理液の置換が可能となり 、均一で迅速な表面処理が可能になる。 基板処理槽内の処理液をオーバーフローさせることにより、基板処理槽内の 処理液を全部排出しなくとも複数種の表面処理毎に処理液の置換が可能であり 、一連の表面処理が完了するまで基板Ｗが空気に触れることはないので、従来 例１のように基板表面に酸化皮膜が形成されたり、空気中の不純物が付着した りするおそれはない。 基板処理槽内の処理液を全部排出しなくても基板Ｗの装填や取り出しができ るので、従来例２に比べて簡素な構造で、かつ表面処理の迅速性に優れる。 別に乾燥装置を設ける必要がないので、装置の占有床面積が小さくなる。 基板処理槽から基板を引き上げて乾燥する構成であるから、別途配置の乾燥 装置まで基板を搬送する必要がないので、全体として迅速な処理が可能になる。 基板処理槽から基板を引き上げて乾燥する構成であるから、搬送中に基板に 付着した液滴に空気中の不純物が溶解するおそれもない。 基板の引き上げ時には処理液はオーバーフローしており、処理液液面付近に パーティクル等が浮遊することはない。このため、基板の引き上げ時に基板に パーティクル等が付着して基板が汚染することを防止できる。 According to the first aspect of the present invention, the processing liquid is supplied from the processing liquid supply pipe connected to the lower portion of the substrate processing tank to cause the processing liquid to overflow from the upper portion thereof, and the open / close valve is selectively opened / closed to control a plurality of types of processing liquids. The substrates are sequentially supplied from the liquid storage container to the processing tank, and the substrate after the processing is pulled up from the inside of the substrate processing tank by the substrate transfer device, so that the following effects are achieved. When substituting the treatment liquid in the substrate treatment bath for each of a plurality of types of surface treatments, the mixed treatment liquid was supplied from the treatment liquid supply pipe connected to the lower portion of the substrate treatment bath so that the overflow occurred. Compared with, it becomes possible to replace the treatment liquid in a shorter time, and uniform and rapid surface treatment becomes possible. By overflowing the processing liquid in the substrate processing bath, it is possible to replace the processing liquid for each surface treatment of multiple types without exhausting all the processing liquid in the substrate processing bath. Since the substrate W does not come into contact with air, there is no possibility that an oxide film will be formed on the substrate surface or impurities in the air will adhere unlike the prior art example 1. Since the substrate W can be loaded and unloaded without discharging all the processing liquid in the substrate processing bath, the structure is simpler than that of the conventional example 2 and the surface treatment is quick. Since it is not necessary to provide a separate drying device, the floor space occupied by the device is reduced. Since the substrate is pulled up from the substrate processing tank and dried, there is no need to transport the substrate to a separately arranged drying device, and therefore, rapid processing is possible as a whole. Since the substrate is pulled out from the substrate processing bath and dried, there is no possibility that impurities in the air will be dissolved in the droplets adhering to the substrate during transportation. The processing liquid overflows when the substrate is pulled up, and particles and the like do not float near the surface of the processing liquid. Therefore, when the substrate is pulled up, it is possible to prevent particles and the like from adhering to the substrate and contaminating the substrate.
【００３０】 請求項２の考案では、請求項１に記載の浸漬型基板処理装置において、基板処 理槽の上部をチャンバーで密閉可能に構成し、前記チャンバー内を減圧手段で減 圧して基板を液切り乾燥するので、処理液液滴の蒸発を一層促進することができ 、基板の乾燥をより効果的に行うことができる。According to a second aspect of the present invention, in the immersion type substrate processing apparatus according to the first aspect, the upper part of the substrate processing tank is configured to be hermetically sealed by a chamber, and the inside of the chamber is depressurized by depressurizing means to depress the substrate. Since the liquid is dried and dried, the evaporation of the treatment liquid droplets can be further promoted, and the substrate can be dried more effectively.
【図１】本考案の実施例に係る浸漬型基板処理装置の概
要図である。FIG. 1 is a schematic diagram of an immersion type substrate processing apparatus according to an embodiment of the present invention.
【図２】開閉弁と開閉弁連結管との連結状態を示す要部
の背面図である。FIG. 2 is a rear view of an essential part showing a connected state of an on-off valve and an on-off valve connecting pipe.
【図３】図２のIII−III線矢視断面図である。3 is a sectional view taken along the line III-III of FIG.
【図４】一種類の処理液ＱAの供給部を示す概要図であ
る。FIG. 4 is a schematic diagram showing a supply unit for one type of treatment liquid Q A.
【図５】本考案の実施例に係る浸漬型基板処理装置の要
部の縦断面図である。FIG. 5 is a vertical cross-sectional view of an essential part of an immersion type substrate processing apparatus according to an embodiment of the present invention.
【図６】従来例１の第１図相当図である。FIG. 6 is a view corresponding to FIG. 1 of Conventional Example 1.
【図７】従来例２の第１図相当図である。FIG. 7 is a view corresponding to FIG. 1 of Conventional Example 2.
１…基板処理槽、 ２…処理液、３ａ…
処理液供給管、 ４…処理液供給部、ＤW…
純水、 ＱA〜ＱE…処理液、Ｗ…
基板、 ６A〜６E…処理液貯溜容
器、７A〜７E…処理液導入管、 ８A〜８E…開
閉弁、15A■15E・20A・23…処理液供給手段、 ４７…減
圧手段、６６…基板搬送装置、 ８０…チ
ャンバー。1 ... Substrate processing tank, 2 ... Processing liquid, 3a ...
Treatment liquid supply pipe, 4 ... Treatment liquid supply unit, D W
Pure water, Q A ~Q E ... processing solution, W ...
Substrate, 6 A to 6 E ... treatment liquid reservoir chamber, 7 A to 7-E ... treatment liquid inlet tube, 8 A to 8 E ... off valve, 15 A ■ 15 E · 20 A · 23 ... treatment liquid supply means, 47 Decompression means, 66 substrate transfer device, 80 chamber.
Claims (2)
を供給してその上部よりオーバーフローさせるように構
成した基板処理槽と、 前記処理液供給管に開閉弁を介して接続された複数種の
処理液貯溜容器と、前記開閉弁を選択的に開閉制御して
複数種の処理液を各処理液貯溜容器より順次処理槽に供
給する処理液供給手段とを備えて成る処理液供給部と、 処理の終了した基板を基板処理槽内から上方に引き上げ
る基板搬送装置と、 を具備して成る浸漬型基板処理装置。1. A substrate processing tank configured to supply a processing liquid from a processing liquid supply pipe connected to a lower portion and to overflow the processing liquid from an upper portion, and a plurality of types connected to the processing liquid supply pipe via an opening / closing valve. A processing liquid supply container, and a processing liquid supply unit that selectively controls opening and closing of the open / close valve to supply a plurality of types of processing liquids to the processing tank sequentially from the processing liquid storage containers. An immersion-type substrate processing apparatus comprising: a substrate transfer device that lifts a processed substrate upward from a substrate processing bath.
チャンバーと、前記チャンバー内を減圧する減圧手段と
を具備して成る請求項１に記載の浸漬型基板処理装置。2. The immersion type substrate processing apparatus according to claim 1, further comprising a chamber configured to be capable of sealing an upper portion of the substrate processing bath, and a decompression unit for decompressing the inside of the chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1993041492U JP2575268Y2 (en) | 1990-10-19 | 1993-06-29 | Immersion type substrate processing equipment |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10982390 | 1990-10-19 | ||
| JP2-109823 | 1990-10-19 | ||
| JP1993041492U JP2575268Y2 (en) | 1990-10-19 | 1993-06-29 | Immersion type substrate processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0644141U true JPH0644141U (en) | 1994-06-10 |
| JP2575268Y2 JP2575268Y2 (en) | 1998-06-25 |
Family
ID=26381119
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1993041492U Expired - Lifetime JP2575268Y2 (en) | 1990-10-19 | 1993-06-29 | Immersion type substrate processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2575268Y2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61154130A (en) * | 1984-12-27 | 1986-07-12 | Toshiba Corp | Apparatus for washing wafer under reduced pressure with running water |
| JPS63314835A (en) * | 1987-06-18 | 1988-12-22 | Hitachi Ltd | Cleaning equipment |
| JPH0213459A (en) * | 1988-06-30 | 1990-01-17 | Hideji Nishiguchi | Automatic foot sole message device |
-
1993
- 1993-06-29 JP JP1993041492U patent/JP2575268Y2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61154130A (en) * | 1984-12-27 | 1986-07-12 | Toshiba Corp | Apparatus for washing wafer under reduced pressure with running water |
| JPS63314835A (en) * | 1987-06-18 | 1988-12-22 | Hitachi Ltd | Cleaning equipment |
| JPH0213459A (en) * | 1988-06-30 | 1990-01-17 | Hideji Nishiguchi | Automatic foot sole message device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2575268Y2 (en) | 1998-06-25 |
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