JP3519603B2 - Substrate processing equipment - Google Patents

Substrate processing equipment

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Publication number
JP3519603B2
JP3519603B2 JP16087498A JP16087498A JP3519603B2 JP 3519603 B2 JP3519603 B2 JP 3519603B2 JP 16087498 A JP16087498 A JP 16087498A JP 16087498 A JP16087498 A JP 16087498A JP 3519603 B2 JP3519603 B2 JP 3519603B2
Authority
JP
Japan
Prior art keywords
liquid
substrate processing
rinse
chemical
chemical liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP16087498A
Other languages
Japanese (ja)
Other versions
JPH11354483A (en
Inventor
秀彦 尾崎
賢司 杉本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Holdings Co Ltd, Dainippon Screen Manufacturing Co Ltd filed Critical Screen Holdings Co Ltd
Priority to JP16087498A priority Critical patent/JP3519603B2/en
Publication of JPH11354483A publication Critical patent/JPH11354483A/en
Application granted granted Critical
Publication of JP3519603B2 publication Critical patent/JP3519603B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、半導体ウエハ、プ
ラズマディスプレイ用ガラス基板、液晶用ガラス基板、
プリント基板等の薬液処理された基板の表面をリンス処
理する基板処理装置に関する。
TECHNICAL FIELD The present invention relates to a semiconductor wafer, a glass substrate for plasma display, a glass substrate for liquid crystal,
The present invention relates to a substrate processing apparatus for rinsing a surface of a substrate, such as a printed circuit board, which has been treated with a chemical solution.

【0002】[0002]

【従来の技術】近年、半導体ウエハ、プラズマディスプ
レイ用ガラス基板、液晶用ガラス基板、プリント基板等
の各種基板の製造プロセスにおいて、基板を薬液に浸漬
して表面に種々の処理を施す基板処理装置が汎用されて
いる。このような基板処理装置は、薬液の供給される基
板処理槽を有する薬液処理部と、リンス液である純水の
供給される基板処理槽を有するリンス処理部とを備えて
おり、基板を薬液の供給された基板処理槽に浸漬して表
面に薬液処理を施した後、リンス液の供給された基板処
理槽に浸漬する一方、そのリンス液の供給された基板処
理槽内にリンス液を供給し続けることにより表面に付着
している薬液を洗い流すリンス処理を施すようになって
いる。
2. Description of the Related Art In recent years, in a manufacturing process of various substrates such as a semiconductor wafer, a glass substrate for plasma display, a glass substrate for liquid crystal, and a printed circuit board, a substrate processing apparatus for dipping the substrate in a chemical solution and performing various treatments on its surface has been proposed. It is commonly used. Such a substrate processing apparatus includes a chemical solution processing unit having a substrate processing tank to which a chemical liquid is supplied, and a rinse processing unit having a substrate processing tank to which pure water, which is a rinse liquid, is supplied. After immersing in the substrate processing tank supplied with the above, the surface is treated with a chemical solution, and then immersed in the substrate processing tank supplied with the rinse liquid, while supplying the rinse liquid into the substrate processing tank supplied with the rinse liquid. By continuing to do so, a rinse treatment is performed to wash away the chemical liquid adhering to the surface.

【0003】また、上記のような薬液とリンス液とが個
別に供給される複数の基板処理槽を備えた多槽式の基板
処理装置の他に、単槽式の基板処理装置も汎用されてい
る。この単槽式の基板処理装置は、1つの基板処理槽に
薬液及びリンス液が順に供給されるように構成されたも
ので、基板を収納した基板処理槽内に薬液を供給するこ
とにより基板の表面に薬液処理を施す一方、薬液処理が
終了すると基板処理槽内にリンス液である純水を供給す
ることにより薬液を基板処理槽外に流し出してリンス液
と置換した後、さらにリンス液を供給し続けることによ
り基板の表面に付着している薬液を洗い流すリンス処理
を施すようにしたものである。
Further, in addition to the multi-tank type substrate processing apparatus having a plurality of substrate processing tanks to which the chemical solution and the rinse solution are individually supplied, a single tank type substrate processing apparatus is also widely used. There is. This single tank type substrate processing apparatus is configured such that a chemical solution and a rinsing solution are sequentially supplied to one substrate processing tank. By supplying the chemical solution into the substrate processing tank containing the substrate, While chemical treatment is applied to the surface, when the chemical treatment is completed, pure water, which is a rinse liquid, is supplied into the substrate treatment bath to flush the chemical liquid out of the substrate treatment bath and replace it with the rinse liquid. The rinse treatment is performed to wash away the chemical liquid adhering to the surface of the substrate by continuously supplying the chemical liquid.

【0004】ところで、上記のような基板処理装置で
は、多槽式であれ単槽式であれ、基板の表面に薬液が残
留していると必要以上に薬液処理が進行したり、パーテ
ィクルの発生原因となったりするため、リンス処理が十
分に行われたかどうかを確認してからリンス処理を終了
させる必要がある。このため、基板処理槽から排出され
るリンス液の排液経路に、リンス液中の薬液の混入度合
を検出する検出手段としての比抵抗測定器の計測部を配
設しておき、リンス処理後のリンス液の比抵抗が所定値
以上になったときにリンス処理が終了したと判断するよ
うになっている。
By the way, in the above-described substrate processing apparatus, regardless of whether it is a multi-tank type or a single-tank type, if the liquid chemical remains on the surface of the substrate, the liquid chemical processing proceeds unnecessarily or causes the generation of particles. Therefore, it is necessary to finish the rinse process after confirming whether the rinse process has been sufficiently performed. For this reason, in the drainage route of the rinse liquid discharged from the substrate processing tank, a measuring unit of a resistivity measuring device is provided as a detecting means for detecting the mixing degree of the chemical liquid in the rinse liquid, and after the rinse treatment. When the specific resistance of the rinse liquid becomes equal to or higher than a predetermined value, it is determined that the rinse process is completed.

【0005】すなわち、リンス処理が十分に行われてい
ないときにはリンス液中に混入している薬液によりその
比抵抗が低くなるが、リンス処理が十分に行われてリン
ス液中に薬液がほとんど混入しなくなるとその比抵抗が
高くなるので、比抵抗が所定値に達した段階でリンス処
理が終了したと判断する。
That is, when the rinse treatment is not sufficiently performed, the specific resistance is lowered by the chemical liquid mixed in the rinse liquid, but the rinse treatment is sufficiently performed and the chemical liquid is almost mixed in the rinse liquid. When the specific resistance reaches a predetermined value, it is determined that the rinsing process has been completed.

【0006】[0006]

【発明が解決しようとする課題】ところが、上記のよう
な基板処理装置においては、検出手段である比抵抗測定
器の計測部が常に排液経路に配設された状態となってい
るので、多槽式の場合にはその計測部が薬液の混入した
リンス液に浸漬されることになり、単槽式の場合にはそ
の計測部が薬液及び薬液の混入したリンス液に浸漬され
ることになる。そのため、時間の経過と共に計測部を構
成している電極等が薬液により腐食されて測定誤差が生
じ易くなるという虞があった。
However, in the substrate processing apparatus as described above, the measuring section of the resistivity measuring device, which is the detecting means, is always arranged in the drainage path. In the case of the tank type, the measuring unit is immersed in the rinse liquid containing the chemical liquid, and in the case of the single tank type, the measuring unit is immersed in the rinse liquid containing the chemical liquid and the chemical liquid. . Therefore, there is a possibility that the electrodes and the like that form the measurement unit may be corroded by the chemical liquid with the passage of time and a measurement error may easily occur.

【0007】従って、本発明は、リンス液中の薬液の混
入度合を検出する検出手段の薬液による腐食を可及的に
抑制することができる基板処理装置を提供することを目
的とするものである。
Therefore, it is an object of the present invention to provide a substrate processing apparatus capable of suppressing corrosion of a detecting means for detecting the mixing degree of a chemical solution in a rinse solution by the chemical solution as much as possible. .

【0008】[0008]

【課題を解決するための手段】上記の目的を達成するた
め、請求項1に係る基板処理装置は、薬液又は薬液を洗
い流すリンス液を順次貯留して基板に薬液処理又はリン
ス処理を施す基板処理槽と、基板処理槽に薬液又はリン
ス液を順次供給する液供給手段と、基板処理槽のリンス
液中への薬液の混入度合を検出する検出手段と、基板処
理槽の薬液又はリンス液を検出手段に導く導入手段と、
導入手段によって検出手段に導かれる薬液を希釈する希
釈手段とを備えたことを特徴としている。
In order to achieve the above object, a substrate processing apparatus according to a first aspect of the present invention is a substrate processing in which a chemical solution or a rinse solution for washing away the chemical solution is sequentially stored and a chemical solution treatment or a rinse treatment is performed on a substrate. Bath, liquid supply means for sequentially supplying the chemical or rinse liquid to the substrate processing bath, detection means for detecting the degree of mixing of the chemical into the rinse liquid in the substrate processing bath, and detection of the chemical or rinse liquid in the substrate processing bath Introduction means leading to means,
And a diluting means for diluting the chemical liquid introduced to the detecting means by the introducing means.

【0009】この構成によれば、基板処理槽の薬液が導
入手段により検出手段に導かれるとき、その薬液が希釈
手段により希釈される。このため、検出手段は薬液処理
時であっても希釈された薬液にしか接触しないことにな
り、薬液による腐食が抑制される。
According to this structure, when the chemical solution in the substrate processing bath is introduced to the detecting means by the introducing means, the chemical solution is diluted by the diluting means. Therefore, the detecting means comes into contact only with the diluted chemical liquid even during the chemical liquid treatment, and the corrosion due to the chemical liquid is suppressed.

【0010】また、請求項2に係る基板処理装置は、薬
液処理された基板の表面をリンス処理するものであっ
て、リンス液により基板の表面がリンス処理される基板
処理槽と、基板処理槽のリンス液中への薬液の混入度合
を検出する検出手段と、基板処理槽のリンス液を検出手
段に導く導入手段と、リンス処理開始後、所定時間が経
過するまで、導入手段によって検出手段に導かれるリン
ス液を希釈する希釈手段とを備えたことを特徴としてい
る。
A substrate processing apparatus according to a second aspect of the present invention is for rinsing a surface of a substrate that has been subjected to a chemical solution treatment, and a substrate processing tank in which the surface of the substrate is rinsed with a rinse solution, and a substrate processing tank. Detecting means for detecting the degree of mixing of the chemical liquid into the rinse liquid, introducing means for guiding the rinse liquid in the substrate processing tank to the detecting means, and after the start of the rinse treatment, until a predetermined time elapses, the detecting means is detected by the introducing means. And a diluting means for diluting the rinse liquid introduced.

【0011】この構成によれば、基板処理槽のリンス液
が導入手段により検出手段に導かれるとき、リンス処理
開始後、所定時間が経過するまでそのリンス液が希釈手
段により希釈される。このため、検出手段は薬液の混入
度合の高いリンス液には接触しないことになり、薬液に
よる腐食が抑制される。
According to this structure, when the rinsing liquid in the substrate processing bath is guided to the detecting means by the introducing means, the rinsing liquid is diluted by the diluting means until a predetermined time has elapsed after the start of the rinsing processing. For this reason, the detection means does not come into contact with the rinse liquid having a high degree of mixing of the chemical liquid, and corrosion by the chemical liquid is suppressed.

【0012】また、請求項3に係る基板処理装置は、請
求項1又は2に係るものにおいて、希釈手段が、検出手
段に向けて希釈液を供給する希釈液供給手段を有するこ
とを特徴としている。
A substrate processing apparatus according to a third aspect is the substrate processing apparatus according to the first or second aspect, wherein the diluting means has a diluting liquid supply means for supplying the diluting liquid toward the detecting means. .

【0013】この構成によれば、検出手段に導かれる薬
液又はリンス液が希釈液により希釈される。このため、
検出手段は薬液又は薬液の混入度合の高いリンス液には
接触しないことになり、薬液による腐食が抑制される。
According to this structure, the chemical liquid or the rinse liquid guided to the detecting means is diluted with the diluting liquid. For this reason,
The detection means does not come into contact with the chemical liquid or the rinse liquid with a high degree of mixing of the chemical liquid, and corrosion by the chemical liquid is suppressed.

【0014】また、請求項4に係る基板処理装置は、薬
液又は薬液を洗い流すリンス液を順次貯留して基板に薬
液処理又はリンス処理を施す基板処理槽と、基板処理槽
に薬液又はリンス液を順次供給する液供給手段と、基板
処理槽のリンス液中への薬液の混入度合を検出する検出
手段と、基板処理槽の薬液又はリンス液を検出手段に導
く導入手段と、検出手段の周囲を保護液で覆うことによ
って検出手段に導かれる薬液から検出手段を保護する保
護手段とを備えたことを特徴としている。
According to a fourth aspect of the present invention, there is provided a substrate processing apparatus in which a chemical solution or a rinse solution for flushing the chemical solution is sequentially stored to perform a chemical solution treatment or a rinse treatment on a substrate, and a chemical solution or a rinse solution in the substrate treatment tank. A liquid supply means for sequentially supplying, a detection means for detecting the mixing degree of the chemical liquid in the rinse liquid in the substrate processing tank, an introducing means for guiding the chemical liquid or the rinse liquid in the substrate processing tank to the detection means, and the surroundings of the detection means. The protective means is provided to protect the detecting means from the chemical liquid guided to the detecting means by being covered with the protective liquid.

【0015】この構成によれば、基板処理槽の薬液が導
入手段により検出手段に導かれるとき、検出手段の周囲
が保護手段により保護液で覆われる。このため、検出手
段は薬液処理時であっても薬液に接触しないことにな
り、薬液による腐食が抑制される。
According to this structure, when the chemical solution in the substrate processing bath is guided to the detection means by the introduction means, the periphery of the detection means is covered with the protection liquid by the protection means. For this reason, the detecting means does not come into contact with the chemical even during the chemical treatment, and corrosion by the chemical is suppressed.

【0016】また、請求項5に係る基板処理装置は、薬
液処理された基板の表面をリンス処理するものであっ
て、リンス液により基板の表面がリンス処理される基板
処理槽と、基板処理槽のリンス液中への薬液の混入度合
を検出する検出手段と、基板処理槽のリンス液を検出手
段に導く導入手段と、リンス処理開始後、所定時間が経
過するまで、検出手段の周囲を保護液で覆うことによっ
て検出手段に導かれる薬液から検出手段を保護する保護
手段とを備えたことを特徴としている。
A substrate processing apparatus according to a fifth aspect of the present invention is for rinsing a surface of a substrate that has been subjected to a chemical solution treatment, and a substrate processing tank in which the surface of the substrate is rinsed with a rinse liquid, and a substrate processing tank. Detecting means for detecting the degree of mixing of the chemical solution into the rinse solution, introducing means for guiding the rinse solution in the substrate processing tank to the detecting means, and protecting the surroundings of the detecting means until a predetermined time elapses after the start of the rinse treatment. It is characterized in that it is provided with a protection means for protecting the detection means from the chemical liquid guided to the detection means by being covered with the liquid.

【0017】この構成によれば、基板処理槽のリンス液
が導入手段により検出手段に導かれるとき、リンス処理
開始後、所定時間が経過するまで検出手段の周囲が保護
手段により保護液で覆われる。このため、検出手段は薬
液の混入度合の高いリンス液には接触しないことにな
り、薬液による腐食が抑制される。
According to this structure, when the rinse liquid in the substrate processing bath is guided to the detection means by the introduction means, the periphery of the detection means is covered with the protection liquid by the protection means until a predetermined time has elapsed after the start of the rinse treatment. . For this reason, the detection means does not come into contact with the rinse liquid having a high degree of mixing of the chemical liquid, and corrosion by the chemical liquid is suppressed.

【0018】また、請求項6に係る基板処理装置は、請
求項4又は5に係るものにおいて、保護手段が、検出手
段の周囲に保護液を供給する保護液供給手段を有するこ
とを特徴としている。
Further, a substrate processing apparatus according to a sixth aspect is the one according to the fourth or fifth aspect, wherein the protection means has a protection liquid supply means for supplying a protection liquid around the detection means. .

【0019】この構成によれば、薬液又は薬液の混入度
合の高いリンス液が導入手段により検出手段に導かれる
とき、検出手段の周囲に保護液供給手段により保護液が
供給される。このため、検出手段は薬液又は薬液の混入
度合の高いリンス液には接触しないことになり、薬液に
よる腐食が抑制される。
According to this structure, when the chemical liquid or the rinse liquid having a high degree of mixing of the chemical liquid is guided to the detecting means by the introducing means, the protective liquid is supplied around the detecting means by the protective liquid supplying means. Therefore, the detection means does not come into contact with the chemical liquid or the rinse liquid with a high degree of mixing of the chemical liquid, and the corrosion due to the chemical liquid is suppressed.

【0020】[0020]

【発明の実施の形態】図1は、本発明の第1の実施形態
に係る基板処理装置の概略構成を示す図である。この図
において、基板処理装置は、薬液中又はリンス液中に半
導体ウエハ等の基板Bを浸漬し、基板Bに対して薬液処
理又はリンス処理を施す基板処理槽10と、この基板処
理槽10内に複数種類の薬液を選択的に供給する薬液供
給部12と、基板処理槽10内にリンス液である純水を
供給する純水供給部14と、これらの薬液供給部12か
らの薬液又は純水供給部14からの純水の供給によって
基板処理槽10の上部開口からオーバーフローした薬液
又は純水を排出する処理液排出部16と、装置全体の動
作を制御する制御部18とを備えている。
1 is a diagram showing a schematic configuration of a substrate processing apparatus according to a first embodiment of the present invention. In this figure, a substrate processing apparatus includes a substrate processing tank 10 in which a substrate B such as a semiconductor wafer is immersed in a chemical solution or a rinse solution, and the chemical solution processing or the rinse processing is performed on the substrate B, and the inside of the substrate processing tank 10. To the substrate processing bath 10, a pure water supply unit 14 that supplies pure water that is a rinse liquid into the substrate processing tank 10, and a chemical liquid or pure water from these chemical liquid supply units 12. A processing liquid discharge unit 16 for discharging the chemical liquid or pure water overflowing from the upper opening of the substrate processing tank 10 by the supply of pure water from the water supply unit 14, and a control unit 18 for controlling the operation of the entire apparatus are provided. .

【0021】基板処理槽10は、石英ガラス等により側
面視略V字状で平面視略矩形状に構成される一方、その
内部に基板Bを収容した図略のキャリアが搬送用ロボッ
トにより挟持されて搬入されるようになっており、その
底部には薬液と純水の供給路を兼ねた処理液供給管20
が連結されている。この処理液供給管20には、導入弁
連結管22、スタティックミキサ24及び給排液切替弁
26が上流側から下流側に向けて順に配設されている。
また、導入弁連結管22には、薬液供給部12からの薬
液を導入する薬液導入弁28,30,32,34,36
が連結されている。
The substrate processing tank 10 is formed of quartz glass or the like into a substantially V shape in a side view and a substantially rectangular shape in a plan view, and a carrier (not shown) accommodating a substrate B therein is sandwiched by a transfer robot. Processing liquid supply pipe 20 serving as a supply passage for the chemical liquid and pure water at the bottom thereof.
Are connected. An introduction valve connection pipe 22, a static mixer 24, and a supply / discharge liquid switching valve 26 are sequentially arranged in the treatment liquid supply pipe 20 from the upstream side to the downstream side.
Further, in the introduction valve connecting pipe 22, the chemical liquid introduction valves 28, 30, 32, 34, 36 for introducing the chemical liquid from the chemical liquid supply unit 12 are introduced.
Are connected.

【0022】なお、導入弁連結管22は、各薬液導入弁
28,30,32,34,36を介して薬液供給部12
からの各薬液を個別に導入するものである。また、スタ
ティックミキサ24は、薬液供給部12からの薬液と純
水供給部14からの純水を混合して所定濃度の薬液を生
成するものである。また、給排液切替弁26は、薬液又
は純水を基板処理槽10内に供給するか又は、基板処理
槽10内の薬液又は純水を後述する排液管76及び排液
ドレン78を介して装置外部に排出するものである。
The introduction valve connecting pipe 22 is connected to the chemical liquid supply unit 12 via the chemical liquid introduction valves 28, 30, 32, 34 and 36.
Each of the chemical solutions from is introduced individually. Further, the static mixer 24 mixes the chemical liquid from the chemical liquid supply unit 12 and the pure water from the pure water supply unit 14 to generate a chemical liquid having a predetermined concentration. Further, the supply / discharge liquid switching valve 26 supplies a chemical liquid or pure water into the substrate processing tank 10 or supplies the chemical liquid or pure water in the substrate processing tank 10 through a drain pipe 76 and a drain drain 78 described later. Is discharged to the outside of the device.

【0023】薬液供給部12は、複数種類の薬液QA
B,QC,QD,QEを貯留する薬液容器38,40,4
2,44,46と、各薬液導入弁28,30,32,3
4,36及び各薬液容器38,40,42,44,46
の間をそれぞれ連通する薬液供給管48,50,52,
54,56と、各薬液供給管48,50,52,54,
56をそれぞれ開閉する薬液切替弁481,501,5
21,541,561と、薬液QA,QB,QC,QD,Q
Eをそれぞれ処理液供給管20側にそれぞれ圧送する圧
送ポンプ482,502,522,542,562と、
各圧送ポンプ482,502,522,542,562
の上流側にそれぞれ配設された薬液供給量測定器48
3,503,523,543,563と、各圧送ポンプ
482,502,522,542,562の下流側にそ
れぞれ配設された薬液フィルタ484,504,52
4,544,564とを備えている。
The chemical liquid supply section 12 is provided with a plurality of chemical liquids Q A ,
Q B, Q C, Q D , chemical stores the Q E container 38,40,4
2, 44, 46 and respective chemical liquid introduction valves 28, 30, 32, 3
4, 36 and each chemical solution container 38, 40, 42, 44, 46
Liquid supply pipes 48, 50, 52, which communicate with each other,
54, 56 and each chemical solution supply pipe 48, 50, 52, 54,
Chemical solution switching valves 481, 501, 5 for opening and closing 56 respectively
And 21,541,561, chemical Q A, Q B, Q C , Q D, Q
Pressure pumps 482, 502, 522, 542, 562 for respectively pumping E to the processing liquid supply pipe 20 side,
Each pressure pump 482, 502, 522, 542, 562
Solution supply amount measuring devices 48 respectively arranged on the upstream side of the
3, 503, 523, 543, 563, and the chemical liquid filters 484, 504, 52 arranged on the downstream side of the respective pressure pumps 482, 502, 522, 542, 562.
4, 544, 564.

【0024】純水供給部14は、純水Wを図略の純水供
給源から処理液供給管20側に圧送する純水供給管58
と、この純水供給管58に上流側から下流側にかけて順
に配設された純水加熱部60、純水開閉弁62、圧力調
整レギュレータ64、純水圧力測定器66及び純水フィ
ルタ68とを備えている。なお、圧力調整レギュレータ
64は、空気圧制御によって純水供給管58内を圧送さ
れる純水流量を制御するものである。
The pure water supply unit 14 pumps pure water W from a pure water supply source (not shown) to the processing liquid supply pipe 20 side.
And a pure water heating unit 60, a pure water opening / closing valve 62, a pressure adjusting regulator 64, a pure water pressure measuring device 66, and a pure water filter 68, which are sequentially arranged on the pure water supply pipe 58 from the upstream side to the downstream side. I have it. The pressure regulator 64 controls the flow rate of pure water pressure-fed in the pure water supply pipe 58 by air pressure control.

【0025】処理液排出部16は、基板処理槽10の上
部外周に配設され、基板処理槽10の上部開口からオー
バーフローする薬液又は純水を受け入れる排液槽70
と、この排液槽70の側部開口から排出される薬液又は
純水を受け入れる排液容器72と、この排液容器72の
底部に形成された排出口74に一端が連結された排液管
76と、この排液管76の他端に連結された排液ドレン
78とを備えている。これらの排液槽70、排液容器7
2、排液管76及び排液ドレン78により排液経路が構
成される。
The processing liquid discharge section 16 is disposed on the outer periphery of the upper portion of the substrate processing tank 10 and receives a chemical liquid or pure water that overflows from the upper opening of the substrate processing tank 10.
A drainage container 72 for receiving a chemical liquid or pure water discharged from the side opening of the drainage tank 70, and a drainage pipe having one end connected to a drainage port 74 formed at the bottom of the drainage container 72. 76 and a drainage drain 78 connected to the other end of the drainage pipe 76. These drainage tank 70, drainage container 7
2. The drainage pipe 76 and the drainage drain 78 form a drainage path.

【0026】図2は、排液槽70及び排液容器72の構
成を詳細に示す斜視図である。すなわち、排液槽70
は、側壁701の一部が切り欠かれて形成された開口7
02と、この開口702の底部に下方向に傾斜して配設
された排出傾斜板703とを備えている。このため、基
板処理槽10の上部開口からオーバーフローした薬液又
は純水は、開口702から排出されて排出傾斜板703
を経由して排液容器72に排出される。
FIG. 2 is a perspective view showing in detail the configurations of the drainage tank 70 and the drainage container 72. That is, the drainage tank 70
Is an opening 7 formed by cutting out a part of the side wall 701.
02 and a discharge inclined plate 703 arranged at the bottom of the opening 702 so as to be inclined downward. Therefore, the chemical liquid or pure water that overflows from the upper opening of the substrate processing tank 10 is discharged from the opening 702 and the discharge inclined plate 703.
And is discharged to the drainage container 72 via.

【0027】排液容器72は、一端が側壁721の上端
に取り付けられ、他端が対向する側壁722に向けて下
方向に緩やかに傾斜して配設された受入傾斜板723を
備えており、排液槽70の排出傾斜板703を介して流
れ出た薬液又は純水が受入傾斜板723上に排出される
ようになっている。この受入傾斜板723上に排出され
た薬液又は純水は、受入傾斜板723上を経由して他端
から排液容器72の底部に流れ込んで貯留される。な
お、排液容器72内に流れ込んだ薬液又は純水が一定レ
ベルを越えると、排液管76から外部に排出されること
になる。
The drainage container 72 is provided with a receiving inclined plate 723 having one end attached to the upper end of the side wall 721 and the other end gently inclined downward toward the opposite side wall 722, The chemical liquid or pure water that has flowed out via the discharge inclined plate 703 of the liquid discharge tank 70 is discharged onto the receiving inclined plate 723. The chemical liquid or pure water discharged onto the receiving inclined plate 723 flows into the bottom of the drainage container 72 from the other end via the receiving inclined plate 723 and is stored therein. When the chemical liquid or pure water flowing into the drainage container 72 exceeds a certain level, it is discharged from the drainage pipe 76 to the outside.

【0028】また、排液容器72には、純水中への薬液
の混入度合を検出する検出手段としての純水の比抵抗を
測定する比抵抗測定器80が取り付けられ、その計測部
801が排液容器72内の受入傾斜板723下方であっ
て薬液又は純水中に浸漬される位置に水平方向に配設さ
れている。
Further, a specific resistance measuring device 80 for measuring the specific resistance of pure water is attached to the drainage container 72 as a detecting means for detecting the mixing degree of the chemical liquid in the pure water. It is arranged horizontally below the receiving inclined plate 723 in the drainage container 72 and at a position where it is immersed in the chemical liquid or pure water.

【0029】また、排液容器72には、内部に排出され
る薬液又は薬液の混入度合の高い純水を希釈する希釈液
供給管82が取り付けられ、その先端側の希釈液供給部
821が受入傾斜板723下方であって比抵抗測定器8
0の計測部801の近傍位置に並設されている。また、
希釈液供給管82は、通路を開閉するエアーバルブ等の
開閉手段84を介して純水供給管58に接続されてお
り、開閉手段84が開放されたときに純水が計測部80
1に向けて放出されるようになっている。
Further, a diluting liquid supply pipe 82 for diluting the chemical liquid or pure water having a high degree of mixing of the chemical liquid discharged inside is attached to the drainage container 72, and a diluting liquid supply portion 821 on the tip side thereof is received. Below the inclined plate 723, the resistivity measuring device 8
They are arranged in parallel in the vicinity of the 0 measurement unit 801. Also,
The diluting liquid supply pipe 82 is connected to the pure water supply pipe 58 via an opening / closing means 84 such as an air valve for opening / closing a passage, and when the opening / closing means 84 is opened, the pure water is measured by the measuring unit 80.
It is designed to be released toward 1.

【0030】なお、この実施形態では、排液槽70の排
出傾斜板703と、排液容器72の受入傾斜板723と
で基板処理槽10の薬液又は純水を比抵抗測定器80の
計測部801に導く導入手段を構成する。
In this embodiment, the discharge inclined plate 703 of the drainage tank 70 and the receiving inclined plate 723 of the drainage container 72 are used to measure the chemical liquid or pure water in the substrate processing bath 10 with the measuring unit of the resistivity measuring device 80. An introduction means for leading to 801 is configured.

【0031】図1に戻り、制御部18は、図示を省略す
るが、所定の演算処理を行うCPU、所定の処理プログ
ラムが記憶されているROM及び処理データを一時的に
記憶するRAMから構成されており、上記所定の処理プ
ログラムに従って基板処理装置の動作を制御する。
Returning to FIG. 1, although not shown, the control unit 18 is composed of a CPU for performing a predetermined arithmetic processing, a ROM in which a predetermined processing program is stored, and a RAM for temporarily storing processing data. Therefore, the operation of the substrate processing apparatus is controlled according to the predetermined processing program.

【0032】すなわち、制御部18には、薬液供給量測
定器483,503,523,543,563、純水圧
力測定器66、及び比抵抗測定器80が接続され、所定
の出力信号が入力されるようになっている。また、制御
部18には、給排液切替弁26、薬液導入弁28,3
0,32,34,36、薬液切替弁481,501,5
21,541,561、圧送ポンプ482,502,5
22,542,562、純水加熱部60、純水開閉弁6
2、圧力調整レギュレータ64及び開閉手段84が接続
され、上記出力信号に基づきそれぞれの動作が制御され
るようになっている。
That is, the control unit 18 is connected with the chemical liquid supply amount measuring devices 483, 503, 523, 543, 563, the pure water pressure measuring device 66, and the specific resistance measuring device 80, and a predetermined output signal is inputted. It has become so. In addition, the control unit 18 includes a supply / discharge liquid switching valve 26, chemical liquid introduction valves 28, 3
0, 32, 34, 36, chemical liquid switching valve 481, 501, 5
21, 541, 561, pressure feed pumps 482, 502, 5
22, 542, 562, pure water heating unit 60, pure water open / close valve 6
2. The pressure regulator 64 and the opening / closing means 84 are connected to each other so that their operations are controlled based on the output signal.

【0033】次に、上記のように構成された基板処理装
置の動作について説明する。まず、図略のスタートスイ
ッチがONされると、純水開閉弁62が開かれる一方、
図略の純水供給源から供給された純水Wが純水加熱部6
0で所定温度に加熱され、処理液供給管20を介して基
板処理槽10内に供給される。このとき、薬液導入弁2
8,30,32,34,36は閉じられており、純水だ
けが基板処理槽10内に継続して供給される。そして、
基板処理槽10の上部開口からオーバーフローした純水
は排液槽70内に排出されると共に、その開口702の
排出傾斜板703を介して排液容器72に排出され、排
液管76及び排液ドレン78を介して装置外部に排出さ
れる。
Next, the operation of the substrate processing apparatus configured as described above will be described. First, when the start switch (not shown) is turned on, the pure water on-off valve 62 is opened,
Pure water W supplied from an unillustrated pure water supply source is pure water heating unit 6
It is heated to a predetermined temperature at 0 and supplied into the substrate processing bath 10 through the processing liquid supply pipe 20. At this time, the liquid medicine introducing valve 2
8, 30, 32, 34 and 36 are closed and only pure water is continuously supplied into the substrate processing bath 10. And
The pure water overflowing from the upper opening of the substrate processing tank 10 is discharged into the drainage tank 70 and is discharged into the drainage container 72 through the draining inclined plate 703 of the opening 702, and the drainage pipe 76 and the drainage liquid. It is discharged to the outside of the device via the drain 78.

【0034】このように、純水が基板処理槽10からオ
ーバーフローするようになると、基板Bが基板処理槽1
0内に搬入される。その後、基板処理槽10内に給送さ
れる1の薬液QA,QB,QC,QD,QEに対応した薬液
導入弁28,30,32,34,36が開かれる一方、
その1の薬液QA,QB,QC,QD,QEに対応する1の
圧送ポンプ482,502,522,542,562が
駆動されて所定の薬液(原液)が導入弁連結管22を介
してスタティックミキサ24に給送される。このスタテ
ィックミキサ24に給送されてきた薬液はスタティック
ミキサ24内で純水供給部14から給送されてきた純水
と混合され、所定濃度の薬液とされた上で基板処理槽1
0内に供給される。
As described above, when the pure water overflows from the substrate processing bath 10, the substrate B is transferred to the substrate processing bath 1.
It is brought into 0. Then, while the first chemical liquid Q A fed into the substrate processing chamber 10, Q B, Q C, Q D, chemical introducing valve 28,30,32,34,36 corresponding to Q E is opened,
Part 1 of the chemical liquid Q A, Q B, Q C , Q D, 1 pumping pump 482,502,522,542,562 corresponding to Q E is driven a predetermined chemical liquid (undiluted solution) is introduced valve connecting pipe 22 And is fed to the static mixer 24 via. The chemical solution fed to the static mixer 24 is mixed with the pure water fed from the pure water supply unit 14 in the static mixer 24 to obtain a chemical solution having a predetermined concentration, and then the substrate processing tank 1
It is supplied within 0.

【0035】そして、この動作が継続されることで基板
処理槽10内の純水が薬液に置換され、これにより基板
Bの表面に対して薬液処理が施される。なお、このと
き、1の薬液導入弁28,30,32,34,36が開
かれていることから薬液処理であると判断され、純水供
給源から給送される純水Wは圧力調整レギュレータ64
によりリンス処理の場合よりも少ない流量となるように
制御されてスタティックミキサ24に給送される。
By continuing this operation, the pure water in the substrate processing bath 10 is replaced with the chemical liquid, and the chemical liquid treatment is applied to the surface of the substrate B. At this time, the one chemical liquid introduction valve 28, 30, 32, 34, 36 is opened, so that it is determined that the chemical liquid processing is being performed, and the pure water W fed from the pure water supply source is the pressure adjustment regulator. 64
Is controlled so that the flow rate is smaller than that in the rinse process, and the static mixer 24 is fed to the static mixer 24.

【0036】また、基板処理槽10に所定濃度の薬液が
継続して供給されることにより、その薬液は上部開口か
らオーバーフローして排液槽70内に排出される。排液
槽70内に排出された薬液は、純水の場合と同様に開口
702の排出傾斜板703を介して排液容器72に排出
され、排液管76及び排液ドレン78を介して装置外部
に排出される。
Further, by continuously supplying the chemical solution having a predetermined concentration to the substrate processing tank 10, the chemical solution overflows from the upper opening and is discharged into the drainage tank 70. The chemical liquid discharged into the drainage tank 70 is discharged to the drainage container 72 via the draining inclined plate 703 of the opening 702, as in the case of pure water, and is discharged via the drainage pipe 76 and the drainage drain 78 to the device. It is discharged to the outside.

【0037】また、上記のように薬液処理であると判断
されたときには、開閉手段84により希釈液供給管82
の通路が開放されて希釈液供給部821から純水(希釈
液)が比抵抗測定器80の計測部801に向けて放出さ
れ、計測部801周辺の薬液又は薬液の混入された純水
が希釈されるようになっている。この結果、比抵抗測定
器80の計測部801は薬液又は薬液の混入度合の高い
純水に浸漬されないようになり、計測部801の電極等
の薬液による腐食が抑制される。
Further, when it is judged that the chemical liquid treatment is performed as described above, the diluting liquid supply pipe 82 is opened by the opening / closing means 84.
Is opened, and pure water (diluting liquid) is discharged from the diluting liquid supply unit 821 toward the measuring unit 801 of the resistivity measuring instrument 80, and the chemical liquid around the measuring unit 801 or the pure water mixed with the chemical liquid is diluted. It is supposed to be done. As a result, the measuring unit 801 of the resistivity measuring device 80 is prevented from being immersed in the chemical solution or pure water having a high degree of mixing of the chemical solution, and corrosion of the measuring unit 801 by the chemical solution is suppressed.

【0038】そして、一定時間が経過して基板Bに対す
る薬液処理が終了すると、開いていた1の薬液導入弁2
8,30,32,34,36が閉じられ、対応する1の
圧送ポンプ482,502,522,542,562の
駆動が停止される。なお、このとき、薬液導入弁28,
30,32,34,36がすべて閉じられていることか
らリンス処理であると判断され、純水供給源から給送さ
れる純水Wは圧力調整レギュレータ64により薬液処理
の場合よりも多い流量となるように制御されて基板処理
槽10内に給送される。
When a certain period of time has passed and the chemical solution treatment for the substrate B is completed, the open chemical solution introduction valve 2
8, 30, 32, 34, 36 are closed, and the driving of the corresponding one pumping pump 482, 502, 522, 542, 562 is stopped. At this time, the chemical liquid introducing valve 28,
Since all of 30, 32, 34 and 36 are closed, it is determined that the rinse treatment is performed, and the pure water W fed from the pure water supply source has a flow rate higher than that in the chemical treatment by the pressure adjusting regulator 64. It is controlled so as to be fed into the substrate processing bath 10.

【0039】そして、純水のみが基板処理槽10内に供
給されると、基板処理槽10内の薬液が上部開口からオ
ーバーフローして排液槽70に排出されることにより基
板処理槽10内の薬液が純水と置換される。排液槽70
に排出された薬液は、上記と同様にして排液ドレン78
を介して装置外部に排出される。このように、基板処理
槽10の薬液が純水で置換されることにより、基板Bの
表面に対して薬液を洗い流すリンス処理が施されること
になる。このリンス処理時に基板処理槽10からオーバ
ーフローした純水は、排出傾斜板703及び受入傾斜板
723を介して排液容器72に排出され、上記と同様に
して排液ドレン78を介して装置外部に排出される。
Then, when only pure water is supplied into the substrate processing bath 10, the chemical in the substrate processing bath 10 overflows from the upper opening and is discharged into the drainage bath 70, so that the inside of the substrate processing bath 10 is discharged. The chemical solution is replaced with pure water. Drainage tank 70
The chemical liquid discharged to the drainage drain 78 is discharged in the same manner as above.
It is discharged to the outside of the device via. In this way, the chemical solution in the substrate processing bath 10 is replaced with pure water, so that the surface of the substrate B is rinsed with the chemical solution. The pure water that overflows from the substrate processing tank 10 during the rinsing process is discharged to the drainage container 72 via the draining inclined plate 703 and the receiving inclined plate 723, and is discharged to the outside of the apparatus via the drainage drain 78 in the same manner as above. Is discharged.

【0040】希釈液供給管82からの純水の放出は、リ
ンス処理が開始されて所定時間が経過するまで継続して
行われ、これにより比抵抗測定部80の計測部801が
薬液の混入度合の高い純水に接触することがないように
なっている。所定時間が経過した後は、開閉手段84に
より通路が閉じられて希釈液供給管82からの純水の放
出が停止される一方、比抵抗測定器80の計測部801
により排液容器72に排出された純水の比抵抗が継続し
て測定される。
The pure water is discharged from the diluting liquid supply pipe 82 continuously until a predetermined time elapses after the rinsing process is started, whereby the measuring unit 801 of the specific resistance measuring unit 80 causes the degree of mixing of the chemical liquid. It will not come into contact with high-purity pure water. After the elapse of a predetermined time, the passage is closed by the opening / closing means 84 to stop the release of pure water from the diluting liquid supply pipe 82, while the measuring unit 801 of the specific resistance measuring device 80.
Thus, the specific resistance of the pure water discharged into the drainage container 72 is continuously measured.

【0041】なお、排液槽70に排出された純水は排出
傾斜板703及び受入傾斜板723を経由して排液容器
72に排出されることにより、排液容器72内への排出
途中における純水への気泡の巻き込みが抑制され、純水
中の気泡の混在による比抵抗の測定誤差を小さくするこ
とができる。
The pure water discharged to the drainage tank 70 is discharged to the drainage container 72 via the draining slope plate 703 and the receiving slope plate 723, so that the pure water is discharged into the drainage container 72. The inclusion of bubbles in pure water is suppressed, and the error in measuring the specific resistance due to the inclusion of bubbles in pure water can be reduced.

【0042】そして、比抵抗測定器80からの出力が所
定値(例えば、18MΩcm)を越えたとき、リンス処
理が終了したと判断して基板処理槽10への純水Wの供
給が停止され、基板Bが基板処理槽10から搬出されて
次工程へと搬送される。
When the output from the resistivity measuring device 80 exceeds a predetermined value (for example, 18 MΩcm), it is judged that the rinsing process is completed, and the supply of pure water W to the substrate processing bath 10 is stopped. The substrate B is carried out of the substrate processing bath 10 and carried to the next step.

【0043】本発明の実施形態に係る基板処理装置は、
上記のように排液容器72に排出されるリンス処理後の
純水中への薬液の混入度合を比抵抗測定器80により検
出する一方、排液容器72に薬液や薬液の混入度合の高
い純水が排出されるときには希釈液供給部821から純
水を放出して薬液や薬液の混入度合の高い純水を希釈す
ることにより比抵抗測定器80の計測部801が薬液や
薬液の混入度合の高い純水に浸漬されないようにしてい
るので、比抵抗測定器80の計測部801の薬液による
腐食を可及的に抑制することができ、長期に亘って純水
の比抵抗を正確に測定することができるようになる。
The substrate processing apparatus according to the embodiment of the present invention is
As described above, the specific resistance measuring device 80 detects the degree of mixing of the chemical solution into the pure water after the rinse treatment, which is discharged to the drainage container 72, while the chemical solution or the pure degree of mixing of the chemical solution into the drainage container 72 is high. When the water is discharged, the measuring unit 801 of the resistivity measuring device 80 changes the mixing degree of the chemical solution or the chemical solution by discharging pure water from the diluent supply section 821 to dilute the chemical solution or the pure water having a high mixing degree of the chemical solution. Since it is not soaked in high-purity water, corrosion of the measuring part 801 of the resistivity measuring device 80 due to the chemical liquid can be suppressed as much as possible, and the specific resistance of pure water can be accurately measured for a long period of time. Will be able to.

【0044】また、この実施形態に係る基板処理装置で
は、比抵抗測定器80が基板処理槽10と分離して配設
されているので、計測部801等で解離した金属イオン
等の影響を受けることなく基板処理槽10において基板
を処理することができる。また、比抵抗測定器80が基
板処理槽10から離反して配設されているので、比抵抗
測定器80の交換等のメンテナンス作業を容易に行うこ
とができる。
Further, in the substrate processing apparatus according to this embodiment, since the resistivity measuring device 80 is arranged separately from the substrate processing tank 10, it is affected by the metal ions dissociated in the measuring section 801 and the like. The substrate can be processed in the substrate processing bath 10 without using it. Further, since the resistivity measuring device 80 is arranged apart from the substrate processing tank 10, maintenance work such as replacement of the resistivity measuring device 80 can be easily performed.

【0045】なお、希釈液供給管82の希釈液供給部8
21からの純水の放出を停止するタイミングはリンス処
理開始後であればいつでも良いが、経験的にリンス処理
が概ね終了する時間を所定時間とし、該所定時間を制御
部18に記憶させておき、リンス処理開始後、該所定時
間が経過したときに純水の放出を停止させればより好ま
しい。このようにしてリンス処理が概ね終了する時間ま
で比抵抗測定器80の計測部801が薬液の混入した純
水に接触することを防止することにより、計測部801
の腐食をより効果的に抑制することができる。
The diluent supply unit 8 of the diluent supply pipe 82
The release of pure water from 21 may be stopped at any time after the start of the rinsing process, but empirically, the time when the rinsing process is almost completed is set as the predetermined time, and the predetermined time is stored in the control unit 18. More preferably, the release of pure water is stopped when the predetermined time has elapsed after the start of the rinse treatment. In this way, the measuring unit 801 of the resistivity measuring device 80 is prevented from coming into contact with the pure water containing the chemical solution until the rinse treatment is almost completed, and thus the measuring unit 801
The corrosion of can be suppressed more effectively.

【0046】また、この実施形態では、希釈液供給部8
21から比抵抗測定器80の計測部801に向けて純水
が放出されるようにしているので計測部801の周囲の
薬液又は薬液の混入した純水を容易に希釈することがで
きるが、必ずしも計測部801に向けて純水を放出させ
る必要はない。要は、排液容器72内に純水が放出され
るようになっておれば、排液容器72に排出された薬液
又は薬液の混入した純水が希釈液供給部821から放出
された純水で希釈されるので、計測部801が薬液や薬
液の混入度合の高い純水に直接接触することが防止さ
れ、計測部801の薬液による腐食を抑制することがで
きる。
Further, in this embodiment, the diluent supply unit 8
Since pure water is discharged from the measuring unit 801 to the measuring unit 801 of the specific resistance measuring device 80, the chemical solution around the measuring unit 801 or the pure water mixed with the chemical solution can be easily diluted, but not necessarily. It is not necessary to discharge pure water toward the measuring unit 801. In short, if the pure water is discharged into the drainage container 72, the chemical liquid discharged into the drainage container 72 or the pure water mixed with the chemical liquid is discharged from the diluent supply unit 821. Since the measuring unit 801 is diluted with, it is possible to prevent the measuring unit 801 from directly contacting the chemical liquid or pure water in which the chemical liquid is highly mixed, and it is possible to suppress corrosion of the measuring unit 801 by the chemical liquid.

【0047】また、この実施形態では、希釈液供給部8
21から純水を放出させることにより排液容器72に排
出される薬液又は薬液の混入した純水を希釈するように
しているが、例えば希釈液供給部821から比抵抗測定
器80の計測部801に向けて多量の純水を放出するよ
うにし、計測部801の周囲を純水で覆うようにしても
よい。こうした場合、計測部801を薬液や薬液の混入
した純水から保護することができ、計測部801の薬液
による腐食を効果的に抑制することができる。
Further, in this embodiment, the diluent supply unit 8
Although the pure water mixed with the chemical liquid or the chemical liquid discharged to the drainage container 72 is diluted by releasing the pure water from 21, the diluted liquid supply unit 821 to the measuring unit 801 of the resistivity measuring device 80 are used, for example. Alternatively, a large amount of pure water may be discharged toward, and the circumference of the measuring unit 801 may be covered with pure water. In such a case, the measuring unit 801 can be protected from the chemical liquid or pure water mixed with the chemical liquid, and the corrosion of the measuring unit 801 by the chemical liquid can be effectively suppressed.

【0048】このように計測部801の周囲を純水で覆
うようにする場合、例えば計測部801の周囲に複数の
希釈液供給部821を配設したり、希釈液供給部821
を円環状に構成して計測部801の周囲に配設したりす
れば、計測部801の周囲をより効果的に純水で覆うこ
とができる。なお、排液容器72に排出される薬液又は
薬液の混入した純水を希釈する場合には、希釈液供給部
821は希釈手段を構成することになり、計測部801
の周囲を純水で覆うようにする場合には、希釈液供給部
821は計測部801を純水(保護液)で覆って保護す
る保護手段を構成することになる。
When the circumference of the measuring unit 801 is covered with pure water in this way, for example, a plurality of diluent supplying units 821 are arranged around the measuring unit 801 or the diluent supplying unit 821.
If it is configured in an annular shape and is arranged around the measurement unit 801, the circumference of the measurement unit 801 can be more effectively covered with pure water. When diluting the chemical liquid or the pure water mixed with the chemical liquid, which is discharged to the drainage container 72, the diluting liquid supply unit 821 constitutes a diluting unit, and the measuring unit 801 is used.
In the case where the surroundings of are covered with pure water, the diluting liquid supply unit 821 constitutes a protection means for protecting the measuring unit 801 by covering it with pure water (protective liquid).

【0049】また、この実施形態では、基板処理装置と
して単槽式のものについて説明しているが、薬液処理部
及びリンス処理部を有し、薬液処理が施された基板をリ
ンス処理部の基板処理槽内に搬入してリンス処理を行う
多槽式の基板処理装置においても該リンス処理部の基板
処理槽に上記のような構成を適用することができる。
In this embodiment, a single tank type apparatus is described as the substrate processing apparatus, but a substrate having a chemical solution processing section and a rinse processing section and having been subjected to the chemical solution processing is a substrate of the rinse processing section. Even in a multi-tank type substrate processing apparatus which carries in a rinsing process by carrying it into the processing tank, the above-described configuration can be applied to the substrate processing tank of the rinsing processing section.

【0050】このような構成では、例えば、初期状態で
希釈液供給部821から純水を放出しておき、薬液処理
部で処理された基板がリンス処理部の基板処理槽内に搬
入されてから所定時間後に純水の放出を停止して排出さ
れた純水の比抵抗を測定するようにすればよい。このと
きの所定時間はリンス処理開始後であればいつでもよい
が、経験的にリンス処理が概ね終了する時間を求めてお
き、これを所定時間とすればより好ましい。こうするこ
とによって、薬液の混入度合の高い純水が計測部801
に接触することを防止でき、比抵抗測定器の腐食を抑制
することができる。
In such a configuration, for example, pure water is discharged from the diluting liquid supply unit 821 in the initial state, and the substrate processed by the chemical solution processing unit is carried into the substrate processing tank of the rinse processing unit. The release of pure water may be stopped after a predetermined time, and the specific resistance of the pure water discharged may be measured. The predetermined time at this time may be any time after the start of the rinsing process, but it is more preferable to empirically find the time when the rinsing process is almost completed and set this as the predetermined time. By doing so, pure water with a high degree of mixing of the chemical liquid is measured by the measuring unit 801.
Can be prevented, and corrosion of the resistivity measuring device can be suppressed.

【0051】また、この実施形態では、排出傾斜板70
3及び受入傾斜板723を設けることにより、排液容器
72に排出される純水への気泡の巻き込みを抑制するよ
うにしているが、必ずしも排出傾斜板703及び受入傾
斜板723の両方を設ける必要はなく、いずれか一方が
設けられておれば気泡の巻き込みを効果的に抑制するこ
とができる。
Further, in this embodiment, the discharge inclined plate 70
3 and the receiving inclined plate 723 are provided so as to suppress the entrainment of bubbles in the pure water discharged to the drainage container 72, but both the discharging inclined plate 703 and the receiving inclined plate 723 are not necessarily provided. However, if any one of them is provided, entrainment of bubbles can be effectively suppressed.

【0052】また、排液槽70に開口702を形成せず
に、排液槽70の底部に取り付けた配管を介して排液槽
70に排出された処理液を排液容器72に流し込むよう
にしてもよい。この場合、排液槽70の配管から排液容
器72の受入傾斜板723に流し込むようにしてもよい
し、受入傾斜板723を除去して排液容器72の底部等
に直接流し込むようにしてもよい。この場合は、配管及
び受入傾斜板723、又は配管が、基板処理槽の薬液又
は純水を計測部801に導く導入手段を構成することに
なる。
Further, without forming the opening 702 in the drainage tank 70, the processing liquid discharged into the drainage tank 70 is made to flow into the drainage container 72 through the pipe attached to the bottom of the drainage tank 70. May be. In this case, it may be made to flow from the pipe of the drainage tank 70 to the receiving inclined plate 723 of the drainage container 72, or the receiving inclined plate 723 may be removed and directly flowed to the bottom of the drainage container 72 or the like. Good. In this case, the pipe and the receiving inclined plate 723 or the pipe constitutes an introducing means for guiding the chemical liquid or pure water in the substrate processing tank to the measuring unit 801.

【0053】また、リンス液は純水に限るものではな
く、純水中にオゾンを含むようにしたもの等であっても
よい。また、薬液や薬液の混入度合の高い純水を希釈す
る希釈液や計測部801の周囲を覆って保護する保護液
も純水に限るものではなく純水中にオゾンを含むように
したもの等であってもよい。さらには、リンス液中への
薬液の混入度合を検出する検出手段として比抵抗測定器
80を使用しているが、比抵抗以外の物性を測定する他
の測定器を使用することも可能である。
The rinse liquid is not limited to pure water, but may be pure water containing ozone. Further, the diluting liquid for diluting the chemical liquid or the pure water having a high degree of mixing of the chemical liquid and the protective liquid for covering and protecting the circumference of the measuring unit 801 are not limited to the pure water, but those containing ozone in the pure water, etc. May be Furthermore, although the specific resistance measuring device 80 is used as the detecting means for detecting the mixing degree of the chemical liquid in the rinse liquid, it is also possible to use another measuring device for measuring the physical properties other than the specific resistance. .

【0054】また、計測部801の電極等の材料とし
て、使用されるすべての薬液に対して耐蝕性を有するも
の(例えば、白金やカーボン等)を用いるようにする
と、電極等の劣化による誤動作等を防止することが可能
となる。
If a material having corrosion resistance to all chemicals used (for example, platinum or carbon) is used as a material for the electrodes of the measuring unit 801, malfunctions due to deterioration of the electrodes, etc. will occur. Can be prevented.

【0055】[0055]

【発明の効果】以上のように請求項1の発明によれば、
薬液又は薬液を洗い流すリンス液を順次貯留して基板に
薬液処理又はリンス処理を施す基板処理槽と、基板処理
槽に薬液又はリンス液を順次供給する液供給手段と、基
板処理槽のリンス液中への薬液の混入度合を検出する検
出手段と、基板処理槽の薬液又はリンス液を検出手段に
導く導入手段と、導入手段によって検出手段に導かれる
薬液を希釈する希釈手段とを備えているので、検出手段
の薬液による腐食を可及的に抑制することができる。
As described above, according to the invention of claim 1,
In the rinse liquid of the substrate processing tank, a substrate processing bath for sequentially storing the chemical liquid or the rinse liquid for rinsing the chemical liquid to perform the chemical liquid treatment or the rinse treatment on the substrate, a liquid supply means for sequentially supplying the chemical liquid or the rinse liquid to the substrate processing bath Since the detecting means for detecting the degree of mixing of the chemical liquid into the substrate, the introducing means for guiding the chemical liquid or the rinse liquid in the substrate processing tank to the detecting means, and the diluting means for diluting the chemical liquid guided by the introducing means to the detecting means are provided. The corrosion of the detection means due to the chemical liquid can be suppressed as much as possible.

【0056】また、請求項2の発明によれば、薬液処理
された基板の表面をリンス処理する基板処理装置であっ
て、リンス液により基板の表面がリンス処理される基板
処理槽と、基板処理槽のリンス液中への薬液の混入度合
を検出する検出手段と、基板処理槽のリンス液を検出手
段に導く導入手段と、リンス処理開始後、所定時間が経
過するまで、導入手段によって検出手段に導かれるリン
ス液を希釈する希釈手段とを備えているので、検出手段
の薬液による腐食を可及的に抑制することができる。
According to a second aspect of the present invention, there is provided a substrate processing apparatus for rinsing a surface of a substrate which has been subjected to a chemical solution treatment, the substrate processing tank rinsing the surface of the substrate with a rinsing liquid, and the substrate processing. Detecting means for detecting the degree of mixing of the chemical liquid into the rinse liquid in the bath, introducing means for guiding the rinse liquid in the substrate processing bath to the detecting means, and detecting means by the introducing means until a predetermined time has elapsed after the start of the rinse treatment Since it is provided with a diluting means for diluting the rinsing liquid introduced in the above, it is possible to suppress corrosion of the detecting means by the chemical liquid as much as possible.

【0057】また、請求項3の発明によれば、希釈手段
が、検出手段に向けて希釈液を供給する希釈液供給手段
を有するものであるので、検出手段の薬液による腐食を
確実に抑制することができる。
According to the third aspect of the present invention, since the diluting means has the diluting liquid supply means for supplying the diluting liquid to the detecting means, the corrosion of the detecting means by the chemical liquid is surely suppressed. be able to.

【0058】また、請求項4の発明によれば、薬液又は
薬液を洗い流すリンス液を順次貯留して基板に薬液処理
又はリンス処理を施す基板処理槽と、基板処理槽に薬液
又はリンス液を順次供給する液供給手段と、基板処理槽
のリンス液中への薬液の混入度合を検出する検出手段
と、基板処理槽の薬液又はリンス液を検出手段に導く導
入手段と、検出手段の周囲を保護液で覆うことによって
検出手段に導かれる薬液から検出手段を保護する保護手
段とを備えているので、検出手段の薬液による腐食を可
及的に抑制することができる。
Further, according to the invention of claim 4, a substrate processing tank for sequentially storing a chemical solution or a rinse solution for rinsing the chemical solution to perform a chemical solution treatment or a rinse treatment on the substrate, and a chemical solution or a rinse solution in the substrate treatment tank in order. Liquid supply means for supplying, detection means for detecting the mixing degree of the chemical liquid in the rinse liquid of the substrate processing tank, introduction means for guiding the chemical liquid or rinse liquid of the substrate processing tank to the detection means, and the surroundings of the detection means Since the protective means is provided to protect the detecting means from the chemical liquid guided to the detecting means by covering with the liquid, it is possible to suppress corrosion of the detecting means by the chemical liquid as much as possible.

【0059】また、請求項5の発明によれば、薬液処理
された基板の表面をリンス処理する基板処理装置であっ
て、リンス液により基板の表面がリンス処理される基板
処理槽と、基板処理槽のリンス液中への薬液の混入度合
を検出する検出手段と、基板処理槽のリンス液を検出手
段に導く導入手段と、リンス処理開始後、所定時間が経
過するまで、検出手段の周囲を保護液で覆うことによっ
て検出手段に導かれる薬液から検出手段を保護する保護
手段とを備えているので、検出手段の薬液による腐食を
可及的に抑制することができる。
According to a fifth aspect of the present invention, there is provided a substrate processing apparatus for rinsing the surface of a substrate which has been subjected to a chemical solution treatment, the substrate processing tank having the surface of the substrate rinsed with the rinse liquid, and the substrate processing. Detecting means for detecting the degree of mixing of the chemical liquid into the rinse liquid in the bath, introducing means for guiding the rinse liquid in the substrate processing bath to the detecting means, and the surroundings of the detecting means until a predetermined time has elapsed after the start of the rinse treatment. Since the protective means is provided to protect the detecting means from the chemical liquid guided to the detecting means by covering with the protective liquid, the corrosion of the detecting means by the chemical liquid can be suppressed as much as possible.

【0060】また、請求項6の発明によれば、保護手段
が、検出手段の周囲に保護液を供給する保護液供給手段
を有するものであるので、検出手段の薬液による腐食を
確実に抑制することができる。
Further, according to the invention of claim 6, since the protection means has the protection liquid supply means for supplying the protection liquid to the periphery of the detection means, the corrosion of the detection means by the chemical liquid is surely suppressed. be able to.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施形態に係る基板処理装置の概略
構成を示す図である。
FIG. 1 is a diagram showing a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention.

【図2】図1に示す基板処理装置の排液槽と排液容器の
斜視図である。
FIG. 2 is a perspective view of a drainage tank and a drainage container of the substrate processing apparatus shown in FIG.

【符号の説明】[Explanation of symbols]

10 基板処理槽 12 薬液供給部(液供給手段) 14 純水供給部(液供給手段) 16 処理液排出部 70 排液槽 72 排液容器 80 比抵抗測定器(検出手段) 82 希釈液供給管(希釈手段) 703 排出傾斜板(導入手段) 723 受入傾斜板(導入手段) B 基板 W 純水(リンス液) 10 Substrate processing tank 12 Chemical liquid supply unit (liquid supply means) 14 Pure water supply unit (liquid supply means) 16 Processing liquid discharge part 70 drainage tank 72 Drainage container 80 Specific resistance measuring device (detection means) 82 Diluent supply pipe (diluting means) 703 Discharge inclined plate (introduction means) 723 Receiving inclined plate (introducing means) B board W Pure water (rinse liquid)

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平9−219386(JP,A) 特開 平9−246226(JP,A) 特開 平6−21036(JP,A) (58)調査した分野(Int.Cl.7,DB名) H01L 21/304 648 B08B 3/04 C03C 17/00 C23G 3/00 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-9-219386 (JP, A) JP-A-9-246226 (JP, A) JP-A-6-21036 (JP, A) (58) Field (Int.Cl. 7 , DB name) H01L 21/304 648 B08B 3/04 C03C 17/00 C23G 3/00

Claims (6)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 薬液又は薬液を洗い流すリンス液を順次
貯留して基板に薬液処理又はリンス処理を施す基板処理
槽と、 前記基板処理槽に薬液又はリンス液を順次供給する液供
給手段と、 前記基板処理槽のリンス液中への薬液の混入度合を検出
する検出手段と、 前記基板処理槽の薬液又はリンス液を前記検出手段に導
く導入手段と、 前記導入手段によって前記検出手段に導かれる薬液を希
釈する希釈手段と、を備えたことを特徴とする基板処理
装置。
1. A substrate processing bath for sequentially storing a chemical liquid or a rinse liquid for rinsing the chemical liquid and performing a chemical liquid treatment or a rinse treatment on a substrate; and a liquid supply means for sequentially supplying the chemical liquid or the rinse liquid to the substrate processing bath, Detecting means for detecting the degree of mixing of the chemical liquid into the rinse liquid of the substrate processing bath, introducing means for guiding the chemical liquid or rinse liquid of the substrate processing bath to the detecting means, and the chemical liquid guided to the detecting means by the introducing means. And a diluting unit for diluting the substrate processing apparatus.
【請求項2】 薬液処理された基板の表面をリンス処理
する基板処理装置であって、 リンス液により基板の表面がリンス処理される基板処理
槽と、 前記基板処理槽のリンス液中への薬液の混入度合を検出
する検出手段と、 前記基板処理槽のリンス液を前記検出手段に導く導入手
段と、 リンス処理開始後、所定時間が経過するまで、前記導入
手段によって前記検出手段に導かれるリンス液を希釈す
る希釈手段と、を備えたことを特徴とする基板処理装
置。
2. A substrate processing apparatus for rinsing a surface of a substrate that has been subjected to a chemical solution treatment, comprising: a substrate processing tank in which the surface of the substrate is rinsed with a rinse solution; and a chemical solution into the rinse solution in the substrate processing tank. Detecting means for detecting the degree of mixing of the substrate, introducing means for guiding the rinse liquid in the substrate processing tank to the detecting means, and after the start of the rinse treatment, a rinsing guided by the introducing means to the detecting means until a predetermined time elapses. A substrate processing apparatus comprising: a diluting unit that dilutes a liquid.
【請求項3】 請求項1又は2記載の基板処理装置にお
いて、前記希釈手段は、前記検出手段に向けて希釈液を
供給する希釈液供給手段を有することを特徴とする基板
処理装置。
3. The substrate processing apparatus according to claim 1, wherein the diluting unit has a diluting liquid supplying unit that supplies a diluting liquid toward the detecting unit.
【請求項4】 薬液又は薬液を洗い流すリンス液を順次
貯留して基板に薬液処理又はリンス処理を施す基板処理
槽と、 前記基板処理槽に薬液又はリンス液を順次供給する液供
給手段と、 前記基板処理槽のリンス液中への薬液の混入度合を検出
する検出手段と、 前記基板処理槽の薬液又はリンス液を前記検出手段に導
く導入手段と、 前記検出手段の周囲を保護液で覆うことによって前記検
出手段に導かれる薬液から該検出手段を保護する保護手
段と、を備えたことを特徴とする基板処理装置。
4. A substrate processing bath for sequentially storing a chemical liquid or a rinse liquid for rinsing the chemical liquid and performing a chemical liquid treatment or a rinse treatment on the substrate, and a liquid supply means for sequentially supplying the chemical liquid or the rinse liquid to the substrate processing bath, Detecting means for detecting the degree of mixing of the chemical liquid into the rinse liquid in the substrate processing tank, introducing means for guiding the chemical liquid or rinse liquid in the substrate processing tank to the detecting means, and covering the periphery of the detecting means with a protective liquid. A substrate processing apparatus, comprising: a protection unit that protects the detection unit from a chemical liquid that is guided to the detection unit.
【請求項5】 薬液処理された基板の表面をリンス処理
する基板処理装置であって、 リンス液により基板の表面がリンス処理される基板処理
槽と、 前記基板処理槽のリンス液中への薬液の混入度合を検出
する検出手段と、 前記基板処理槽のリンス液を前記検出手段に導く導入手
段と、 リンス処理開始後、所定時間が経過するまで、前記検出
手段の周囲を保護液で覆うことによって前記検出手段に
導かれる薬液から該検出手段を保護する保護手段と、を
備えたことを特徴とする基板処理装置。
5. A substrate processing apparatus for rinsing a surface of a substrate that has been subjected to a chemical solution treatment, comprising: a substrate processing tank in which the surface of the substrate is rinsed with a rinse solution; and a chemical solution into the rinse solution in the substrate processing tank. Detection means for detecting the degree of contamination of the substrate treatment means, introducing means for guiding the rinse liquid in the substrate processing bath to the detection means, and covering the periphery of the detection means with a protective liquid until a predetermined time elapses after the start of the rinse treatment. A substrate processing apparatus, comprising: a protection unit that protects the detection unit from a chemical liquid that is guided to the detection unit.
【請求項6】 請求項4又は5記載の基板処理装置にお
いて、前記保護手段は、前記検出手段の周囲に保護液を
供給する保護液供給手段を有することを特徴とする基板
処理装置。
6. The substrate processing apparatus according to claim 4, wherein the protection unit has a protection liquid supply unit that supplies a protection liquid around the detection unit.
JP16087498A 1998-06-09 1998-06-09 Substrate processing equipment Expired - Fee Related JP3519603B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16087498A JP3519603B2 (en) 1998-06-09 1998-06-09 Substrate processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16087498A JP3519603B2 (en) 1998-06-09 1998-06-09 Substrate processing equipment

Publications (2)

Publication Number Publication Date
JPH11354483A JPH11354483A (en) 1999-12-24
JP3519603B2 true JP3519603B2 (en) 2004-04-19

Family

ID=15724247

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16087498A Expired - Fee Related JP3519603B2 (en) 1998-06-09 1998-06-09 Substrate processing equipment

Country Status (1)

Country Link
JP (1) JP3519603B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7253895B2 (en) * 2018-10-31 2023-04-07 株式会社Screenホールディングス Substrate processing equipment

Also Published As

Publication number Publication date
JPH11354483A (en) 1999-12-24

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