JPH0643258B2 - Dielectric material for circuit boards - Google Patents

Dielectric material for circuit boards

Info

Publication number
JPH0643258B2
JPH0643258B2 JP29903087A JP29903087A JPH0643258B2 JP H0643258 B2 JPH0643258 B2 JP H0643258B2 JP 29903087 A JP29903087 A JP 29903087A JP 29903087 A JP29903087 A JP 29903087A JP H0643258 B2 JPH0643258 B2 JP H0643258B2
Authority
JP
Japan
Prior art keywords
weight
glass
dielectric material
dielectric
circuit board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP29903087A
Other languages
Japanese (ja)
Other versions
JPH01141837A (en
Inventor
昇 一ノ瀬
栄一 浅田
隆 遠藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shoei Chemical Inc
Original Assignee
Shoei Chemical Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shoei Chemical Inc filed Critical Shoei Chemical Inc
Priority to JP29903087A priority Critical patent/JPH0643258B2/en
Publication of JPH01141837A publication Critical patent/JPH01141837A/en
Publication of JPH0643258B2 publication Critical patent/JPH0643258B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass

Description

【発明の詳細な説明】 産業上の利用分野 本発明は回路基板として有用な誘電体材料、特に低温焼
成が可能で、かつ抗折強度の大きい誘電体材料に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric material useful as a circuit board, and more particularly to a dielectric material which can be fired at a low temperature and has a high bending strength.

従来の技術 LSIなど半導体及び回路部品の高密度実装化に伴い、
近年多層回路基板が広く採用されている。セラミック多
層回路基板は、誘電体層と導体層とを交互に積層し、同
時焼成して一体化することにより製造されるものであ
り、誘電体材料としは、従来主としてアルミナ系セラミ
ックスが使用されてきた。ところでアルミナは絶縁性、
機械的強度等の特性は優れているが、焼結温度が1500℃
以上と高く、内部配線導体材料には比較的電気抵抗の高
いMoやW等の高融点金属を用いるので、導体幅を大き
くとらなくてはならないなど、小型化、高密度化が困難
である。そこで電気抵抗が小さく融点の低いAg、A
u、Cuなどの高導電性金属を導体材料として用いるた
めに、これらの金属の融点以下で焼結可能な誘電体材料
の開発が望まれている。
Conventional technology With the high-density mounting of semiconductors and circuit components such as LSI,
In recent years, multilayer circuit boards have been widely adopted. A ceramic multilayer circuit board is manufactured by alternately laminating dielectric layers and conductor layers, co-firing and integrating them, and conventionally, alumina-based ceramics have been mainly used as a dielectric material. It was By the way, alumina is insulating,
It has excellent properties such as mechanical strength, but the sintering temperature is 1500 ℃.
Since high-melting point metals such as Mo and W having relatively high electric resistance are used for the internal wiring conductor material, the conductor width must be made large, and miniaturization and high density are difficult. . Therefore, Ag, A with low electric resistance and low melting point
In order to use a highly conductive metal such as u or Cu as a conductor material, it is desired to develop a dielectric material that can be sintered at a temperature below the melting point of these metals.

更に誘電体の誘電率は基板内部での信号の伝播速度に大
きく影響するが、アルミナ系セラミックスは誘電率が約
8.5〜10と比較的大きく、信号伝送の高速化に限界があ
るため、より低い誘電率を有する誘電体材料が求められ
ている。
Furthermore, the dielectric constant of the dielectric material has a great effect on the propagation speed of the signal inside the substrate, but the dielectric constant of alumina ceramics is about
Since it is relatively large at 8.5 to 10 and there is a limit to speeding up signal transmission, a dielectric material having a lower dielectric constant is required.

これらの要請に応えて近年、例えば低温焼結セラミック
ス、結晶化ガラス、ガラス−セラミックス混合物など種
々の誘電体材料が提案され、一部実用化されているが、
誘電率等の電気特性、機械的強度等回路基板としての要
求特性を全て満足するものではない。特に現在実用化さ
れている、非酸化性雰囲気中で低温焼成するタイプの材
料は、抗折強度が2000Kg以下と、アルミナ基板に比べて
著しく小さい欠点があった。
In response to these demands, various dielectric materials such as low temperature sintered ceramics, crystallized glass, and glass-ceramics mixtures have been proposed in recent years, and some of them have been put into practical use.
It does not satisfy all the electrical characteristics such as the permittivity and the mechanical strength required characteristics of the circuit board. In particular, the type of material which is currently put into practical use and which is fired at a low temperature in a non-oxidizing atmosphere has a defect that the bending strength is 2000 kg or less, which is significantly smaller than that of an alumina substrate.

本発明者等は先にNgO,B23,SiO2,BaO,
ZrO2を構成成分とし、焼成によりBaZr(BO3
2結晶を生じて、優れた絶縁性及び誘電特性を示すガラ
ス材料を開発し、特許出願を行った。しかしながらこの
材料は優れた性質を示すものの、強度がアルミナ基板に
比べてやや小さい傾向がある。
The present inventors previously found that NgO, B 2 O 3 , SiO 2 , BaO,
ZrO 2 as a constituent component and BaZr (BO 3 )
We developed a glass material that produced two crystals and showed excellent insulating and dielectric properties, and filed a patent application. However, although this material exhibits excellent properties, its strength tends to be slightly lower than that of the alumina substrate.

発明が解決しようとする問題点 本発明の目的は、低温で焼成でき、焼成後は優れた絶縁
特性及び誘電特性を示し、かつ機械的強度の改善された
新規な回路基板用誘電体材料を提供することにある。
DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention An object of the present invention is to provide a novel dielectric material for circuit boards, which can be fired at a low temperature, exhibits excellent insulating properties and dielectric properties after firing, and has improved mechanical strength. To do.

問題点を解決するための手段 本発明は、(A)マグネシウム、硼素、珪素、バリウム、
ジルコニウム、アルミニウム及びカルシウムを各々酸化
物換算で MgO 20〜40重量%、 B23 10〜30重量%、 SiO2 10〜35重量%、 BaO 5〜22重量%、 ZrO2 5〜20重量%、 Al23 2〜15重量%、 CaO 0〜 5重量%、 の比率で含有するガラス、及び(B)(A)のガラスを予め熱
処理し、結晶化させて得れたガラス−セラミックより選
んだ1種又は2種以上からなる回路基板用誘電体材料で
ある。又第二の発明は、このガラス及び/又はガラス−
セラミックスに、更に結晶性フィラーを配合した回路基
板用誘電体材料である。
Means for Solving the Problems The present invention provides (A) magnesium, boron, silicon, barium,
Zirconium, aluminum and calcium are respectively converted into oxides MgO 20 to 40% by weight, B 2 O 3 10 to 30% by weight, SiO 2 10 to 35% by weight, BaO 5 to 22% by weight, ZrO 2 5 to 20% by weight. , Al 2 O 3 2 to 15% by weight, CaO 0 to 5% by weight, and the glass of (B) and (A) which have been heat-treated and crystallized in advance. It is a dielectric material for a circuit board, which consists of one or more selected types. The second invention is the glass and / or the glass-
It is a dielectric material for circuit boards in which crystalline filler is added to ceramics.

本発明のガラス(A)は、各成分酸化物の原料化合物を酸
化物換算で上記の粗成範囲となるように混合し、通常の
ガラスの製法に従って例えば1400〜1600℃の温度で溶融
し、次いで溶融物を急冷してガラス化し、これを粉砕す
ることによって製造される。又ガラス−セラミックス
(B)は、このガラスを結晶化温度以上で熱処理して予め
結晶化させた後、粉砕することにより製造される。
Glass (A) of the present invention, the raw material compounds of each component oxide is mixed so as to be in the above-mentioned roughening range in terms of oxide, and melted at a temperature of, for example, 1400 to 1600 ° C. according to a usual glass manufacturing method, It is then produced by quenching the melt to glass and crushing it. Also glass-ceramics
(B) is produced by heat-treating this glass at a crystallization temperature or higher to crystallize it in advance and then pulverize it.

結晶性フィラーとしてはアルミナ、ジルコニア、シリ
カ、ベリリア、珪素ジルコニウム、スタアタイト、フォ
ルステライト、ムライト等の酸化物や、窒化珪素、窒化
アルミニウム、窒化硼素等の窒化物などを使用すること
ができる。
As the crystalline filler, oxides such as alumina, zirconia, silica, beryllia, silicon zirconium, staratite, forsterite and mullite, and nitrides such as silicon nitride, aluminum nitride and boron nitride can be used.

作用 本発明のガラスは、800〜900℃付近に結晶化温度を有し
ており、結晶化温度以上で焼成することによって一部結
晶化しガラス−セラミックスとなる。X線回折分析の結
果、焼成体は主としてBaZr(BO32とBaAl2
Si28の二つの結晶相と残部組成のガラス質の三相か
らなっており、これらの結晶相とガラス相との共存によ
り機械的強度が大きく、絶縁性の優れた緻密な誘電体が
得られるものと考えられる。
Action The glass of the present invention has a crystallization temperature in the vicinity of 800 to 900 ° C., and is partly crystallized into a glass-ceramic by firing at a temperature above the crystallization temperature. As a result of X-ray diffraction analysis, the fired body was mainly BaZr (BO 3 ) 2 and BaAl 2
It consists of two crystal phases of Si 2 O 8 and a glassy three phase of the balance composition. Due to the coexistence of these crystal phases and the glass phase, a dense dielectric having a high mechanical strength and an excellent insulating property is obtained. It is thought to be obtained.

即ちBaZr(BO32結晶は、上記ガラス質との共存
で、低誘電率でかつ優れた絶縁特性を有する誘電体とな
る。一方ガラス成分中のAl23は、焼成体の抗折強度
を大きく向上させる。これはAl23によって、BaA
2Si28(セルシアン)の結晶相が新たに出現し、
これが強度の増加に寄与すること、及び系全体の結晶化
度が増加することによるものと考えられる。尚Al23
を配合すると焼結温度が上昇するが、CaOを添加する
ことによって、二つの結晶相の生成に影響を及ぼすこと
なく焼結温度の上昇を抑えることができる。
That is, the BaZr (BO 3 ) 2 crystal becomes a dielectric having a low dielectric constant and excellent insulating properties in coexistence with the above glassy material. On the other hand, Al 2 O 3 in the glass component greatly improves the bending strength of the fired body. This is due to Al 2 O 3
A new crystalline phase of l 2 Si 2 O 8 (celsian) appears,
It is considered that this contributes to the increase in strength and the increase in the crystallinity of the entire system. Al 2 O 3
Although the sintering temperature is increased by blending, the addition of CaO can suppress the increase in the sintering temperature without affecting the production of the two crystal phases.

ガラスの組成範囲を限定した理由は、次の通りである。The reason for limiting the glass composition range is as follows.

MgOが20〜40重量%の範囲を外れると、前記結晶
が析出しにくくなる。B23が30重量%を越えると強
度が低下し、回路基板用に使用できなくなり、又10重
量%未満ではガラス製造時の溶融が困難になる。SiO
2は35重量%を越えると結晶化が遅くなる。又10重
量%より少量ではガラスの結晶化が速まり、焼結性が悪
化する。BaOは22重量%より多いと誘電率が高くな
り、5重量%未満ではZrO2が分相を起こし、均質な
ガラス−セラミックスが得られない。ZrO2が20重
量%を越えると溶融困難になり、又5重量%より少ない
場合は結晶化反応が緩慢になり、不完全な結晶相しか得
られない。Al23は、15重量%を越えると焼結温度
が高くなるので望ましくなく、又2重量%より少ないと
機械的強度の増大に効率がない。CaOは必ずしも配合
する必要はないが、Al23による焼結温度の高温化を
抑えるのに有効である。1〜5重量%の添加が効果的で
あるが、5重量%を越えると抗折強度の低下をもたら
す。
When MgO is out of the range of 20 to 40% by weight, the crystals are hard to precipitate. If the content of B 2 O 3 exceeds 30% by weight, the strength is lowered and it cannot be used for a circuit board, and if it is less than 10% by weight, melting during glass production becomes difficult. SiO
When 2 exceeds 35% by weight, crystallization becomes slow. On the other hand, if the amount is less than 10% by weight, crystallization of the glass is accelerated and the sinterability is deteriorated. When BaO is more than 22% by weight, the dielectric constant becomes high, and when it is less than 5% by weight, ZrO 2 causes a phase separation, and a homogeneous glass-ceramic cannot be obtained. When ZrO 2 exceeds 20% by weight, it becomes difficult to melt, and when it is less than 5% by weight, the crystallization reaction becomes slow and only an incomplete crystal phase can be obtained. If Al 2 O 3 exceeds 15% by weight, the sintering temperature becomes high, which is not desirable, and if it is less than 2% by weight, the mechanical strength is not efficiently increased. CaO does not necessarily have to be blended, but is effective in suppressing the sintering temperature from increasing due to Al 2 O 3 . The addition of 1 to 5% by weight is effective, but if it exceeds 5% by weight, the bending strength is lowered.

更にガラス(A)を予め結晶化させ、粉砕してガラス−セ
ラミック質の誘電体材料(B)とし、これを焼結させるこ
とによっても同様な低誘電率の誘電体を得ることが可能
である。
Further, it is also possible to obtain a similar dielectric material with a low dielectric constant by crystallizing glass (A) in advance and pulverizing it to obtain a glass-ceramic dielectric material (B) and sintering it. .

ガラス(A)及びガラス−セラミックス(B)はそれぞれ単独
で用いてもよいが、両者を混合して使用することもでき
る。尚ガラス(A)は単独で使用すると、焼成時の脱バイ
ンダが不十分になる傾向があり、焼成体中にカーボンが
残留し易いから、フィラーとして予め結晶化されたガラ
ス−セラミックス(B)や、その他通常使用される結晶性
フィラーと混合使用するのが望ましい。特にガラス−セ
ラミックス(B)をフィラーとして用いる場合は、焼成後
は均質体となって組成及び特性を大きく変化させないの
で有利であり、かつ多量に配合することも可能で混合比
を自由に選択することができる利点である。これらのフ
ィラーは、脱バインダ性の改善の他、機械的強度、成形
性等を改善したり、焼成時の収縮率を制御する効果があ
る。
The glass (A) and the glass-ceramic (B) may be used alone, or may be used as a mixture of both. When the glass (A) is used alone, the binder removal during firing tends to be insufficient, and carbon tends to remain in the fired body, so glass-ceramics (B) or crystallized in advance as a filler or , And it is desirable to use it by mixing with other commonly used crystalline filler. In particular, when glass-ceramics (B) is used as a filler, it is advantageous because it becomes a homogenous body after firing and does not significantly change the composition and characteristics, and it is possible to mix a large amount and freely select the mixing ratio. This is an advantage. These fillers have the effects of improving the binder removal property, mechanical strength, moldability, etc., and controlling the shrinkage ratio during firing.

本発明の誘電体材料は、回路基板や、多層回路の誘電体
層として使用される。
The dielectric material of the present invention is used as a circuit board or a dielectric layer of a multilayer circuit.

例えば多層回路基板に使用する場合は、本発明のガラス
又はガラス−セラミックスをポールミルにて平均粒径1
〜5μm程度まで粉砕し、得られた粉末に必要に応じて
フィラー、結合剤、可塑剤、湿潤剤を添加し、溶剤中で
充分に混合してスラリーを作り、ドクターブレード法な
ど公知の方法により成形してグリーンシートを作成す
る。このグリーンシートに導体を印刷し、複数枚積層し
て加熱加圧した後、焼成することにより一体化する。焼
成はガラスの結晶化温度以上で行えばよく、例えば1000
℃以下の低温で焼成することができる。
For example, when used in a multilayer circuit board, the glass or glass-ceramics of the present invention is used in a pole mill to have an average particle size of 1
Grind to about 5 μm, add filler, binder, plasticizer, wetting agent to the obtained powder as needed, mix well in a solvent to make a slurry, and use a known method such as a doctor blade method. Mold to form a green sheet. A conductor is printed on the green sheet, a plurality of sheets are laminated, heated and pressed, and then fired to be integrated. The firing may be carried out at a crystallization temperature of glass or higher, for example, 1000
It can be fired at a low temperature of ℃ or less.

焼成雰囲気は使用する導体材料により、酸化性雰囲気、
非酸化性雰囲気のいずれでもよいが、本発明の誘電体材
料は、非酸化性雰囲気中で焼成した場合でも充分に大き
い機械的強度が得られる。尚グリーンシートの代わりに
誘電体ペーストとして、ペースト積層法による多層回路
基板の製造に用いることもできる。
Depending on the conductor material used, the firing atmosphere may be an oxidizing atmosphere,
Although any non-oxidizing atmosphere may be used, the dielectric material of the present invention can obtain sufficiently high mechanical strength even when fired in a non-oxidizing atmosphere. A dielectric paste may be used instead of the green sheet to manufacture a multilayer circuit board by a paste laminating method.

実施例 実施例1 Mg(OH)2,B23,SiO2,BaCO3,Zr
2,Al23及びCaCO3を酸化物換算で表1に示し
た割合で秤量し、自動乳鉢で混合し、白金ルツボ中で15
00℃に30分保持して溶融した後、双ロールで急冷してガ
ラスを製造した。このガラスをスタンプミルで粗粉砕
し、次いで溶剤としてメタノールを用いてアルミナ製ポ
ールミルで48時間粉砕し、平均粒径2.5μmのガラス粉
末(A)を得た。
EXAMPLES Example 1 Mg (OH) 2, B 2 O 3, SiO 2, BaCO 3, Zr
O 2 , Al 2 O 3 and CaCO 3 were weighed in the proportions shown in Table 1 in terms of oxides, mixed in an automatic mortar and mixed in a platinum crucible for 15
After being kept at 00 ° C. for 30 minutes to be melted, the glass was rapidly cooled by twin rolls. This glass was roughly crushed with a stamp mill and then with an alumina pole mill for 48 hours using methanol as a solvent to obtain a glass powder (A) having an average particle diameter of 2.5 μm.

一方、これと同一組成のガラスを作成し、粗粉砕したも
のを900℃で30分間熱処理して結晶化させ、再度粉砕し
て平均粒径2.5μmガラス−セラミックス粉末(B)を得
た。
On the other hand, a glass having the same composition as this was prepared, coarsely crushed, heat-treated at 900 ° C. for 30 minutes to crystallize, and crushed again to obtain a glass-ceramic powder (B) having an average particle diameter of 2.5 μm.

ガラス粉末(A)50重量部、ガラス−セラミックス粉末(B)
50重量部、アクリル系樹脂12重量部、フタル酸系可塑剤
3重量部及びケトン系溶剤28重量部をアルミナ製ポール
ミルを用いて充分混合してスラリーとした。次いで脱泡
及び粘度調整を行った時、ドクタープレード法により厚
さ150μmのグリーンシートを作成した。6枚のグリ
ーンシートを温度80℃、圧力100Kg/cm2で加熱して積層
し、未焼結基板を得た。
Glass powder (A) 50 parts by weight, glass-ceramic powder (B)
50 parts by weight, 12 parts by weight of acrylic resin, 3 parts by weight of phthalic acid plasticizer, and 28 parts by weight of ketone solvent were thoroughly mixed using an alumina pole mill to form a slurry. Then, when defoaming and viscosity adjustment were performed, a green sheet having a thickness of 150 μm was prepared by the doctor blade method. Six green sheets were heated and laminated at a temperature of 80 ° C. and a pressure of 100 kg / cm 2 to obtain an unsintered substrate.

これをベルト炉において、600℃で2.5時間保持して有機
物を除去した後、窒素雰囲気中表1に示した温度で2.5
時間保持して焼成を行った。
This was held in a belt furnace at 600 ° C for 2.5 hours to remove organic substances, and then at a temperature shown in Table 1 in a nitrogen atmosphere at 2.5 ° C.
Firing was performed while holding the time.

得られた焼成体について各々比誘電率、絶縁抵抗及び抗
折強度を測定し、結果を第1表に示した。
The relative permittivity, insulation resistance and bending strength of each of the obtained fired bodies were measured, and the results are shown in Table 1.

実施例2〜5 ガラスの組成を表1のとおりとする以外は実施例1と同
様にしてグリーンシートを作成し、積層後、焼成した。
得られた焼成体について特性を測定し、結果を表1に併
せて示した。
Examples 2 to 5 Green sheets were prepared in the same manner as in Example 1 except that the glass composition was changed as shown in Table 1, laminated, and fired.
The characteristics of the obtained fired body were measured, and the results are also shown in Table 1.

比較例1〜3 MgO、B23、SiO2、BaCO3、ZrO2、Al2
3及びCaOを表1に示した割合で混合し、実施例と
同様にしてグリーンシートを作成し、積層後、焼成し
た。得られた焼成体について特性を測定し、結果を表1
に併せて示した。
Comparative Example 1~3 MgO, B 2 O 3, SiO 2, BaCO 3, ZrO 2, Al 2
O 3 and CaO were mixed in the proportions shown in Table 1, a green sheet was prepared in the same manner as in the example, laminated and then fired. The characteristics of the obtained fired body were measured, and the results are shown in Table 1.
Are also shown.

表1より明らかなように、本発明の誘電体材料は回路基
板材料として優れた特性を有しており、特にAl23
添加で抗折強度が著しく向上した。尚比較例3ではAl
23の添加量が多いため焼成温度が高く、1100℃でも焼
結しなかった。
As is clear from Table 1, the dielectric material of the present invention has excellent characteristics as a circuit board material, and in particular, the addition of Al 2 O 3 significantly improved the bending strength. In Comparative Example 3, Al
Since the addition amount of 2 O 3 was large, the firing temperature was high, and sintering did not occur even at 1100 ° C.

実施例6〜9 実施例1においてガラス粉末(A)とガラス−セラミック
ス粉末(B)の比率を変え、表2のとおりとする以外は同
様にしてグリーンシートを作り、積層した後焼成した。
Examples 6 to 9 Green sheets were produced in the same manner as in Example 1 except that the ratio of the glass powder (A) and the glass-ceramic powder (B) was changed and the results were as shown in Table 2, and the sheets were laminated and then fired.

得られた誘電体の特性を表2に示した。The characteristics of the obtained dielectric are shown in Table 2.

実施例10 実施例1と同一組成のガラス粉末と、平均粒径1.0μm
の珪酸ジルコニウム粉末とを重量比で50:50の割合で混
合し、実施例1と同様にしてグリーンシートを作り、積
層した後980℃で2.5時間焼成した。得られた焼成体の比
誘電率、絶縁抵抗及び抗折強度はそれぞれ7.8、1014Ωc
m以上、2100Kg/cm2であった。
Example 10 Glass powder having the same composition as in Example 1 and an average particle size of 1.0 μm
The zirconium silicate powder (1) was mixed at a weight ratio of 50:50 to prepare a green sheet in the same manner as in Example 1, laminated and then fired at 980 ° C. for 2.5 hours. The relative permittivity, insulation resistance and bending strength of the obtained fired body are 7.8 and 10 14 Ωc, respectively.
It was 2100 Kg / cm 2 over m.

発明の効果 本発明の誘電体材料は、優れた電気的特性及び高い機械
的強度を有しており、かつ低温での焼結が可能なので、
導体抵抗の低いAg、Au、Cuなどの金属を配線材料
として使用することができ、高密度実装が可能な回路基
板用材料として極めて有用である。
Effects of the Invention The dielectric material of the present invention has excellent electrical properties and high mechanical strength, and since it can be sintered at low temperatures,
Metals having low conductor resistance such as Ag, Au, and Cu can be used as wiring materials, and are extremely useful as circuit board materials capable of high-density mounting.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】(A)マグネシウム、硼素、珪素、バリウ
ム、ジルコニウム、アルミニウム及びカルシウムを各々
酸化物換算で MgO 20〜40重量%、 B23 10〜30重量%、 SiO2 10〜35重量%、 BaO 5〜22重量%、 ZrO2 5〜20重量%、 Al23 2〜15重量%、 CaO 0〜 5重量%、 の比率で含有するガラス 及び (B)(A)のガラスを予め熱処理し、結晶化させて得られた
ガラス−セラミックス より選んだ1種又は2種以上からなる回路基板用誘電体
材料。
1. (A) Magnesium, boron, silicon, barium, zirconium, aluminum and calcium are converted into oxides in an amount of 20-40% by weight of MgO, 10-30% by weight of B 2 O 3 and 10-35% by weight of SiO 2. %, BaO 5 to 22% by weight, ZrO 2 5 to 20% by weight, Al 2 O 3 2 to 15% by weight, CaO 0 to 5% by weight, and a glass of (B) (A). A dielectric material for a circuit board, which comprises one or more selected from glass-ceramics obtained by heat treatment and crystallization in advance.
【請求項2】(1)(A)マグネシウム、硼素、珪素、バリウ
ム、ジルコニウム、アルミニウム及びカルシウムを各々
酸化物換算で MgO 20〜40重量%、 B23 10〜30重量%、 SiO2 10〜35重量%、 BaO 5〜22重量%、 ZrO2 5〜20重量%、 Al23 2〜15重量%、 CaO 0〜 5重量%、 の比率で含有するガラス 及び (B)(A)のガラスを予め熱処理し、結晶化させて得られた
ガラス−セラミックス より選んだ1種又は2種以上と、 (2)結晶性フィラー とからなる回路基板用誘電体材料。
2. (1) (A) Magnesium, boron, silicon, barium, zirconium, aluminum and calcium are converted into oxides in an amount of 20 to 40% by weight of MgO, 10 to 30% by weight of B 2 O 3 , and SiO 2 10 Glass containing 5 to 35% by weight, BaO 5 to 22% by weight, ZrO 2 5 to 20% by weight, Al 2 O 3 2 to 15% by weight, CaO 0 to 5% by weight, and (B) (A) 1. A dielectric material for a circuit board, comprising one or more selected from glass-ceramics obtained by preliminarily heat-treating and crystallizing the glass, and (2) a crystalline filler.
JP29903087A 1987-11-27 1987-11-27 Dielectric material for circuit boards Expired - Fee Related JPH0643258B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29903087A JPH0643258B2 (en) 1987-11-27 1987-11-27 Dielectric material for circuit boards

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29903087A JPH0643258B2 (en) 1987-11-27 1987-11-27 Dielectric material for circuit boards

Publications (2)

Publication Number Publication Date
JPH01141837A JPH01141837A (en) 1989-06-02
JPH0643258B2 true JPH0643258B2 (en) 1994-06-08

Family

ID=17867306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29903087A Expired - Fee Related JPH0643258B2 (en) 1987-11-27 1987-11-27 Dielectric material for circuit boards

Country Status (1)

Country Link
JP (1) JPH0643258B2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3647130B2 (en) * 1996-02-06 2005-05-11 昭栄化学工業株式会社 Insulator glass composition and glass composition for thick film multilayer circuit insulation layer using the same
US6579818B2 (en) * 2000-08-28 2003-06-17 Kyocera Corporation Glass ceramic sintered product
JP5057620B2 (en) * 2000-08-28 2012-10-24 京セラ株式会社 Low-temperature fired ceramic sintered body and wiring board
JP2002338295A (en) * 2001-05-17 2002-11-27 Asahi Glass Co Ltd Alkali-free glass, composition for electronic circuit board and electronic circuit board
JP4994052B2 (en) * 2006-03-28 2012-08-08 京セラ株式会社 Board and circuit board using the same
JP4935248B2 (en) * 2006-08-30 2012-05-23 株式会社デンソー Hybrid integrated circuit device and method of manufacturing hybrid integrated circuit device
CN101663248A (en) * 2007-04-17 2010-03-03 旭硝子株式会社 Method for producing alkali-free glass
JP5657860B2 (en) * 2008-12-19 2015-01-21 釜屋電機株式会社 Glazed insulating substrate, collective insulating substrate, manufacturing method thereof, and fuse resistor
CN116396074A (en) * 2023-04-10 2023-07-07 江苏科技大学 Low-loss dielectric material and preparation method and application thereof

Also Published As

Publication number Publication date
JPH01141837A (en) 1989-06-02

Similar Documents

Publication Publication Date Title
US4749665A (en) Low temperature fired ceramics
US4301324A (en) Glass-ceramic structures and sintered multilayer substrates thereof with circuit patterns of gold, silver or copper
US5821181A (en) Ceramic composition
WO2012066976A1 (en) Crystalline glass powder
JPH05211005A (en) Dielectric composition
JPH0643258B2 (en) Dielectric material for circuit boards
JP7348587B2 (en) glass ceramic dielectric
JPS62278145A (en) Sintered material of glass ceramic
US3627547A (en) High alumina bodies comprising anorthite gehlenite and spinel
JPH0676227B2 (en) Glass ceramic sintered body
JPH0457627B2 (en)
JPH0617249B2 (en) Glass ceramic sintered body
JPH0617250B2 (en) Glass ceramic sintered body
JPH09241068A (en) Low temperature fired ceramic substrate
JPH0559054B2 (en)
JPH08188446A (en) Glass ceramic substrate
JPS62252340A (en) Sintered glass and sintered glass ceramic
JP3336176B2 (en) Glass ceramic sintered body
JPH03141153A (en) Inorganic composition having low-temperature sintering property and low dielectric constant
JP3125500B2 (en) Ceramic substrate
JP3515867B2 (en) Low temperature firing ceramic composition
JPH07242439A (en) Glass-ceramics substrate burnt at low temperature and production thereof
JP4047050B2 (en) Low-temperature fired porcelain composition, low-temperature fired porcelain, and wiring board using the same
CN115724588A (en) Crystalline glass powder, glass ceramic dielectric material, sintered body, and high-frequency circuit member
CN116924774A (en) High-strength low-dielectric composite microwave dielectric ceramic material and preparation method thereof

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees