JPH0642457B2 - Cleaning chemical endpoint detection method for plasma chemical vapor deposition apparatus - Google Patents
Cleaning chemical endpoint detection method for plasma chemical vapor deposition apparatusInfo
- Publication number
- JPH0642457B2 JPH0642457B2 JP26908884A JP26908884A JPH0642457B2 JP H0642457 B2 JPH0642457 B2 JP H0642457B2 JP 26908884 A JP26908884 A JP 26908884A JP 26908884 A JP26908884 A JP 26908884A JP H0642457 B2 JPH0642457 B2 JP H0642457B2
- Authority
- JP
- Japan
- Prior art keywords
- end point
- cleaning
- plasma
- vapor deposition
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
Description
【発明の詳細な説明】 産業上の利用分野 本発明はプラズマ放電を用いて半導体薄膜あるいは絶縁
体薄膜を堆積するプラズマ化学気相堆積装置の堆積室内
に付着した薄膜をエッチングガスおよびプラズマ放電を
用いて除去する工程の際にその除去工程終点をモニター
する方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention uses etching gas and plasma discharge for a thin film deposited in a deposition chamber of a plasma chemical vapor deposition apparatus for depositing a semiconductor thin film or an insulator thin film using plasma discharge. The present invention relates to a method of monitoring the end point of the removal step during the removal step.
従来の技術 従来、プラズマ化学気相堆積装置の堆積室内のクリーニ
ング終点をモニターする技術としては、例えば管野卓雄
編著「半導体プラズマプロセス技術」（昭５５．７．１
０），産業図書、Ｐ１１１に示されているように、質量
分析法、発光分光法等ドライエッチング技術に適用され
ているモニター方式が応用されていた。2. Description of the Related Art Conventionally, as a technique for monitoring the cleaning end point in the deposition chamber of a plasma chemical vapor deposition apparatus, for example, "Semiconductor Plasma Process Technology" by Takuo Kanno (Sho 55.7.1).
0), Industrial Books, P111, the monitor method applied to the dry etching technology such as mass spectrometry and emission spectroscopy was applied.
発明が解決しようとする問題点 このような従来のモニター方式では、プラズマ化学気相
堆積装置に薄膜堆積時には直接必要としない終点検出装
置等を設置しなければならない上に、絶えずその検出装
置のメンテナンスを必要とした。Problems to be Solved by the Invention In such a conventional monitoring method, a plasma chemical vapor deposition apparatus must be provided with an end point detection device or the like that is not required directly during thin film deposition, and the detection device is constantly maintained. Needed.
本発明はかかる問題点に鑑みなされたもので、本来プラ
ズマ化学気相堆積装置に設置されている反射電力計、Ｄ
Ｃバイアス電圧計を使用して、容易に堆積室内のクリー
ニング終点を検出する方法を提供することを目的として
いる。The present invention has been made in view of such problems, and a reflection power meter originally installed in a plasma chemical vapor deposition apparatus, D
It is an object of the present invention to provide a method for easily detecting a cleaning end point in a deposition chamber by using a C-bias voltmeter.
問題点を解決するための手段 本発明は上記問題を解決するため、放電投入電力に対す
る反射電力を測定する電力計あるいは放電電極のＤＣバ
イアス電圧を測定する電圧計よりその出力を得て、任意
の設定値に到達した時に信号を出力できるものである。Means for Solving the Problems In order to solve the above problems, the present invention obtains its output from a wattmeter for measuring the reflected power with respect to the discharge input power or a voltmeter for measuring the DC bias voltage of the discharge electrode to obtain an arbitrary output. A signal can be output when the set value is reached.
作用 本発明は上記した構成により、堆積薄膜が付着した堆積
室内にエッチングガスを導入しグロー放電を開始した後
に整合回路のインダクタンス、キャパシタンスを固定す
ることにより、堆積室に付着した薄膜が除去された時放
電投入電力に対する反射電力の上昇が検出され、任意の
設定値に到達した時出力される信号によりクリーニング
終点をモニターできる。Effect of the Invention According to the present invention, the thin film attached to the deposition chamber is removed by fixing the inductance and capacitance of the matching circuit after introducing the etching gas into the deposition chamber to which the deposited thin film is attached and starting glow discharge. An increase in the reflected power with respect to the hourly discharge input power is detected, and the cleaning end point can be monitored by a signal output when an arbitrary set value is reached.
実施例 第１図は本発明のクリーニング終点をモニターする回路
の一実施例を示すブロック図である。第１図において、
１は堆積室、２は放電電極であって、高周波電源７によ
り放電電力を投入する。この時投入電力は投入電力計６
により測定し、反射電力計４に示される電力が最小にな
るように整合回路３のインダクタンスおよびキャパシタ
ンスを調整する。その後堆積室に付着した薄膜が除去さ
れた時反射電力が増加し、設定値にその反射電力が到達
したことを終点検出器５により検知してクリーニングの
終点をモニターすることができる。Embodiment FIG. 1 is a block diagram showing an embodiment of a circuit for monitoring the cleaning end point according to the present invention. In FIG.
Reference numeral 1 is a deposition chamber, 2 is a discharge electrode, and discharge power is input from a high frequency power source 7. At this time, the input power is 6
And the inductance and capacitance of the matching circuit 3 are adjusted so that the power indicated by the reflection power meter 4 is minimized. After that, the reflected power increases when the thin film attached to the deposition chamber is removed, and the arrival of the reflected power at the set value can be detected by the end point detector 5 to monitor the end point of the cleaning.
第２図に本発明の一実施例をおいてアモルファスシリコ
ンが付着した堆積室をＣF4＋１０％Ｏ２のエッチングガ
スを用いて放電投入電力を４００Ｗとした場合のクリー
ニング時間に対する反射電力の変化とクリーニング終点
を示す。図に示すように、クリーニング時間６の時点よ
り反射電力が徐々に上昇し、反射電力が４０Ｗに達した
時クリーニングが終了していることがわかる。従って第
１図の終点検出器５の設定値を４０Ｗに設定しておくこ
とにより、クリーニング終点を容易にモニターできる。FIG. 2 shows changes in the reflected power with respect to the cleaning time when the deposition chamber to which the amorphous silicon is adhered and the discharge power is set to 400 W using an etching gas of CF 4 + 10% O 2 in one embodiment of the present invention. Indicates the cleaning end point. As shown in the figure, it can be seen that the reflected power gradually increases from the time of cleaning time 6 and the cleaning is completed when the reflected power reaches 40 W. Therefore, by setting the set value of the end point detector 5 in FIG. 1 to 40 W, the cleaning end point can be easily monitored.
第３図は本発明の他の実施例におけるクリーニング終点
をモニターする回路のブロック図である。本実施例は、
堆積室に付着した薄膜が除去された時、放電電力のＤＣ
バイアス電圧の変化をＤＣバイアス電圧計８により測定
し、そのＤＣバイアス電圧が設置値に到達したことを終
点検出器５により感知してクリーニング終点をモニター
する。FIG. 3 is a block diagram of a circuit for monitoring a cleaning end point according to another embodiment of the present invention. In this example,
When the thin film attached to the deposition chamber is removed, the discharge power DC
The change in the bias voltage is measured by the DC bias voltmeter 8, and the end point detector 5 senses that the DC bias voltage has reached the set value and monitors the cleaning end point.
第４図にアモルファスシリコンが付着した堆積室をＣF4
＋１０％O2のエッチングガスを用いて放電投入電力を４
００Ｗとした場合のクリーニング時間に対するＤＣバイ
アス電圧の変化とクリーニング終点を示す。図に示すよ
うに、クリーニング時間６よりＤＣバイアス電圧が減少
しはじめ、−４２Ｖに達した時クリーニングが終了して
いることがわかる。従って、第３図の終点検出器５の設
定値を−４２Ｖに設定しておくことにより、クリーニン
グ終点を容易にモニターできる。Figure 4 shows the deposition chamber with amorphous silicon adhered to CF 4
Discharge input power is 4 with etching gas of + 10% O 2.
The change of the DC bias voltage with respect to the cleaning time and the cleaning end point when the power is set to 00 W are shown. As shown in the figure, it can be seen that the DC bias voltage starts to decrease from the cleaning time 6 and the cleaning is completed when it reaches -42V. Therefore, the cleaning end point can be easily monitored by setting the set value of the end point detector 5 in FIG. 3 to -42V.
発明の効果 以上述べてきたように、本発明は、本来プラズマＣＶＤ
装置に必須である放電反射電力計またはＤＣバイアス電
圧計を用いて、きわめて簡易な構成で容易にクリーニン
グ終点をモニターできる効果を有する。EFFECTS OF THE INVENTION As described above, the present invention is essentially plasma CVD.
By using a discharge reflection power meter or a DC bias voltmeter, which is indispensable for the apparatus, the cleaning end point can be easily monitored with an extremely simple structure.
第１図は本発明の一実施例におけるクリーニング終点モ
ニター回路のブロック図、第２図はクリーニング時間に
対する反射電力の変化を示す図、第３図は本発明の他の
実施例におけるクリーニング終点モニター回路のブロッ
ク図、第４図はクリーニング時間に対するＤＣバイアス
電圧の変化を示す図である。 １……堆積室、２……放電電極、３……整合回路、４…
…反射電力計、５……終点検出器、６……投入電力計、
７……高周波電源、８……ＤＣバイアス電圧計。FIG. 1 is a block diagram of a cleaning end point monitor circuit according to an embodiment of the present invention, FIG. 2 is a diagram showing a change in reflected power with respect to cleaning time, and FIG. 3 is a cleaning end point monitor circuit according to another embodiment of the present invention. Is a block diagram of FIG. 4 and FIG. 4 is a diagram showing a change in DC bias voltage with respect to cleaning time. 1 ... Deposition chamber, 2 ... Discharge electrode, 3 ... Matching circuit, 4 ...
… Reflective power meter, 5 …… End point detector, 6 …… Making power meter,
7: high frequency power supply, 8: DC bias voltmeter.
Claims (1)
着した半導体薄膜あるいは絶縁体薄膜をエッチングガス
及びグロー放電等のプラズマ放電を用いて前記薄膜を除
去する工程の際に、放電投入電力に対する反射電力また
はプラズマ電極に発生するバイアス電圧を計測すること
により、前記堆積室内の薄膜除去工程の終点をモニター
することを特徴とするプラズマ化学気相堆積装置のクリ
ーニング終点検出方法。1. A method for removing a semiconductor thin film or an insulator thin film deposited in a deposition chamber of a plasma chemical vapor deposition apparatus by using an etching gas and a plasma discharge such as a glow discharge to remove the thin film from a discharge input power. A method of detecting a cleaning end point of a plasma enhanced chemical vapor deposition apparatus, characterized in that the end point of a thin film removing step in the deposition chamber is monitored by measuring a reflected power or a bias voltage generated in a plasma electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26908884A JPH0642457B2 (en) | 1984-12-19 | 1984-12-19 | Cleaning chemical endpoint detection method for plasma chemical vapor deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26908884A JPH0642457B2 (en) | 1984-12-19 | 1984-12-19 | Cleaning chemical endpoint detection method for plasma chemical vapor deposition apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61145825A JPS61145825A (en) | 1986-07-03 |
| JPH0642457B2 true JPH0642457B2 (en) | 1994-06-01 |
Family
ID=17467498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26908884A Expired - Fee Related JPH0642457B2 (en) | 1984-12-19 | 1984-12-19 | Cleaning chemical endpoint detection method for plasma chemical vapor deposition apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0642457B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4602981A (en) * | 1985-05-06 | 1986-07-29 | International Business Machines Corporation | Monitoring technique for plasma etching |
| US6543459B1 (en) | 2000-04-07 | 2003-04-08 | Koninklijke Philips Electronics N.V. | Method of determining an end point for a remote microwave plasma cleaning system |
| US7534469B2 (en) | 2005-03-31 | 2009-05-19 | Asm Japan K.K. | Semiconductor-processing apparatus provided with self-cleaning device |
| WO2018193584A1 (en) * | 2017-04-20 | 2018-10-25 | 堺ディスプレイプロダクト株式会社 | Cvd device and cleaning method therefor |
| TW202309969A (en) * | 2021-05-06 | 2023-03-01 | 日商東京威力科創股份有限公司 | Plasma processing apparatus and endpoint detection method |
-
1984
- 1984-12-19 JP JP26908884A patent/JPH0642457B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61145825A (en) | 1986-07-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |