JPS61145825A - Cleaning end detection for plasma chemical vapor deposition apparatus - Google Patents
Cleaning end detection for plasma chemical vapor deposition apparatusInfo
- Publication number
- JPS61145825A JPS61145825A JP26908884A JP26908884A JPS61145825A JP S61145825 A JPS61145825 A JP S61145825A JP 26908884 A JP26908884 A JP 26908884A JP 26908884 A JP26908884 A JP 26908884A JP S61145825 A JPS61145825 A JP S61145825A
- Authority
- JP
- Japan
- Prior art keywords
- end point
- deposition chamber
- power
- discharge
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はプラズマ放電を用いて半導体薄膜あるいは絶縁
体薄膜を堆積するプラズマ化学気相堆積装置の堆積室内
に付着した薄膜をエツチングガスおよびプラズマ放電を
用いて除去する工程の際にその除去工程終点をモニをす
る方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention uses etching gas and plasma discharge to remove a thin film deposited within the deposition chamber of a plasma chemical vapor deposition apparatus that deposits a semiconductor thin film or an insulating thin film using plasma discharge. The present invention relates to a method for monitoring the end point of the removal process during the removal process.
従来の技術
従来、プラズマ化学気相堆積装置の堆積室内のクリーニ
ング終点全モートする技術としては、例えば菅野卓雄編
著「半導体プラズマプロセス技術」(昭56.7.10
)、産業図書、Plllに示されているように、質量分
析法、発光分光法等ドライエツチング技術に適用されて
いるモニタ一方式が応用されていた。Conventional technology Conventionally, as a technique for cleaning all end points in the deposition chamber of a plasma chemical vapor deposition apparatus, for example, "Semiconductor Plasma Process Technology" edited by Takuo Kanno (July 10, 1982)
), Sangyo Tosho, Plll, a monitor system applied to dry etching techniques such as mass spectrometry and emission spectroscopy was applied.
発明が解決しようとする問題点
このような従来のモニタ一方式では、プラズマ化学気相
堆積装置に薄膜堆積時には直接必要としない終点検出装
置等を設置しなければならない上に、絶えずその検出装
置のメンテナンスを必要とした。Problems to be Solved by the Invention With such a conventional one-monitor system, it is necessary to install an end point detection device, etc., which is not directly required during thin film deposition, in the plasma chemical vapor deposition apparatus, and the detection device is constantly being monitored. Maintenance required.
本発明はかかる問題点に鑑みなされたもので、本来プラ
ズマ化学気相堆積装置に設置されている反射電力計、D
Cバイアス電圧計を使用して、容易に堆積室内のクリー
ニング終点を検出する方法を提供することを目的として
いる。The present invention was made in view of such problems, and is based on a reflection power meter originally installed in a plasma chemical vapor deposition apparatus.
It is an object of the present invention to provide a method for easily detecting the end point of cleaning in a deposition chamber using a C bias voltmeter.
問題点を解決するための手段
本発明は上記問題を解決するため、放電投入電力に対す
る反射電力を測定する電力計あるいは放電電極のDCバ
イアス電圧を測定する電圧計よりその出力を得て、任意
の設定値に到達した時に信号を出力できるものである。Means for Solving the Problems In order to solve the above problems, the present invention obtains the output from a wattmeter that measures the reflected power with respect to the discharge input power or a voltmeter that measures the DC bias voltage of the discharge electrode, and It can output a signal when a set value is reached.
作用
本発明は上記した構成により、堆積薄膜が付着した堆積
室内にエツチングガスを導入しグロー放電を開始した後
に整合回路のインダクタンス、キャパシタンスを固定す
ることにより、堆積室に付着した薄膜が除去された時放
電投入電力に対する反射電力の上昇が検出され、任意の
設定値に到達した時出力される信号によりクリーニング
終点をモニターできる。According to the above-described structure, the present invention introduces etching gas into the deposition chamber to which the deposited thin film has adhered, starts glow discharge, and then fixes the inductance and capacitance of the matching circuit, thereby removing the thin film adhered to the deposition chamber. The end point of cleaning can be monitored by a signal output when an increase in reflected power with respect to power applied during discharge is detected and reaches an arbitrary set value.
実施例
第1図は本発明のクリーニング終点をモニターする回路
の一実施例を示すブロック図である。第1図において、
1は堆積室、2は放電電極であって、高周波電源7によ
り放電電力を投入する。この時投入電力は投入電力計6
により測定し、反射電力計4に示される電力が最小にな
るように整合回路3のインダクタンスおよびキャパシタ
ンスを調整する。その後堆積室に付着した薄膜が除去さ
れた時反射電力が増加し、設定値にその反射電力が到達
したことを終点検出器6により検知してクリーニングの
終点をモニターすることができる。Embodiment FIG. 1 is a block diagram showing an embodiment of a circuit for monitoring the cleaning end point of the present invention. In Figure 1,
1 is a deposition chamber and 2 is a discharge electrode, to which discharge power is applied by a high frequency power source 7. At this time, the input power is input power meter 6
The inductance and capacitance of the matching circuit 3 are adjusted so that the power shown on the reflected power meter 4 is minimized. Thereafter, when the thin film adhering to the deposition chamber is removed, the reflected power increases, and the end point detector 6 detects that the reflected power has reached a set value, thereby making it possible to monitor the end point of cleaning.
第2図に本発明の一実施例においてアモルファスシリコ
ンが付着した堆積室をCF、+10%02のエツチング
ガスを用いて放電投入電力を400Wとした場合のクリ
ーニング時間に対する反射電力の変化とクリーニング終
点を示す。図に示すように、クリーニング時間eの時点
より反射電力が徐々に上昇し、反射電力が40Wに達し
た時クリーニングが終了していることがわかる。従って
第1図の終点検出器5の設定値140Wに設定しておく
ことにより、クリーニング終点を容易にモニターできる
。Figure 2 shows the change in reflected power and cleaning end point with respect to the cleaning time when the deposition chamber to which amorphous silicon was deposited was etched with CF, +10%02 etching gas, and the discharge input power was 400 W in one embodiment of the present invention. show. As shown in the figure, the reflected power gradually increases from the cleaning time e, and when the reflected power reaches 40 W, it can be seen that the cleaning has been completed. Therefore, by setting the end point detector 5 of FIG. 1 to a set value of 140 W, the cleaning end point can be easily monitored.
第3図は本発明の他の実施例におけるクリーニング終点
をモニターする回路のブロック図である。FIG. 3 is a block diagram of a circuit for monitoring the cleaning end point in another embodiment of the present invention.
本実施例は、堆積室に付着した薄膜が除去された時、放
電電力のDCバイアス電圧の変化をDCバイアス電圧計
8により測定し、そのDCバイアス電圧が設定値に到達
したことを終点検出器6により感知してクリーニング終
点をモニターする。In this embodiment, when the thin film attached to the deposition chamber is removed, the change in the DC bias voltage of the discharge power is measured by the DC bias voltmeter 8, and the end point detector detects that the DC bias voltage has reached the set value. 6 to monitor the cleaning end point.
第4図にアモルファスシリコンが付着した堆積室をay
、+1o%へのエツチングガスを用いて放電投入電力1
400Wとした場合のクリーニング時間に対するDCバ
イアス電圧の変化とクリーニング終点を示す。図に示す
ように、クリーニング時間6よりDCバイアス電圧が減
少しはじめ、−42vに達した時クリーニングが終了し
ていることがわかる。従って、第3図の終点検出器6の
設定値f−42Vに設定しておくことにより、クリーニ
ング終点を容易にモニターできる。Figure 4 shows the deposition chamber with amorphous silicon attached.
, discharge input power 1 using etching gas to +1o%
The change in DC bias voltage and the cleaning end point with respect to the cleaning time when the power is 400W are shown. As shown in the figure, the DC bias voltage begins to decrease from cleaning time 6, and when it reaches -42V, it can be seen that the cleaning has been completed. Therefore, by setting the end point detector 6 of FIG. 3 to the set value f-42V, the cleaning end point can be easily monitored.
発明の効果
以上述べてきたように、本発明は、本来プラズマCVD
装置に必須である。放電反射電力計またはDCバイアス
電圧計を用いて、きわめて簡易な構成で容易にクリーニ
ング終点をモニタできる効果を有する。Effects of the Invention As mentioned above, the present invention is originally based on plasma CVD.
Required for the device. Using a discharge reflection wattmeter or a DC bias voltmeter, the cleaning end point can be easily monitored with a very simple configuration.
第1図は本発明の一実施例におけるクリーニング終点モ
ニター回路のブロック図、第2図はクリーニング時間に
対する反射電力の変化を示す図、第3図は本発明の他の
実施例におけるクリーニング終点モニター回路のブロッ
ク図、第4図はクリーニング時間に対するDCバイアス
電圧の変化を示す図である。
1・・・・・・堆積室、2・・・・・・放電電極、3・
・・・・・整合回路、4・・・・・・反射電力計、5・
・・・・・終点検出器、6・・・・・・投入電力計、7
・・・・・・高周波電源、8・・・・・・DCバイアス
電圧計。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図
第2図
クリ−;ンヂ蒔聞(秒先学it)
第3図
第4図FIG. 1 is a block diagram of a cleaning end point monitor circuit in one embodiment of the present invention, FIG. 2 is a diagram showing changes in reflected power with respect to cleaning time, and FIG. 3 is a cleaning end point monitor circuit in another embodiment of the present invention. FIG. 4 is a block diagram showing changes in DC bias voltage with respect to cleaning time. 1...Deposition chamber, 2...Discharge electrode, 3.
...Matching circuit, 4...Reflected power meter, 5.
... End point detector, 6 ... Power supply meter, 7
...High frequency power supply, 8...DC bias voltmeter. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 Cree;
Claims (1)
薄膜あるいは絶縁体薄膜をエッチングガス及びグロー放
電等のプラズマ放電を用いて前記薄膜を除去する工程の
際に、放電投入電力に対する反射電力またはプラズマ電
極に発生するバイアス電圧を計測することにより、前記
堆積室内の薄膜除去工程の終点をモニターすることを特
徴とするプラズマ化学気相堆積装置のクリーニング終点
検出方法。During the process of removing a semiconductor thin film or an insulating thin film deposited in the deposition chamber of a plasma chemical vapor deposition apparatus using an etching gas and plasma discharge such as glow discharge, the reflected power or plasma electrode with respect to the discharge input power is removed. A cleaning end point detection method for a plasma chemical vapor deposition apparatus, characterized in that the end point of a thin film removal process in the deposition chamber is monitored by measuring a bias voltage generated in the deposition chamber.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26908884A JPH0642457B2 (en) | 1984-12-19 | 1984-12-19 | Cleaning chemical endpoint detection method for plasma chemical vapor deposition apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26908884A JPH0642457B2 (en) | 1984-12-19 | 1984-12-19 | Cleaning chemical endpoint detection method for plasma chemical vapor deposition apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61145825A true JPS61145825A (en) | 1986-07-03 |
JPH0642457B2 JPH0642457B2 (en) | 1994-06-01 |
Family
ID=17467498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26908884A Expired - Fee Related JPH0642457B2 (en) | 1984-12-19 | 1984-12-19 | Cleaning chemical endpoint detection method for plasma chemical vapor deposition apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0642457B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61256637A (en) * | 1985-05-06 | 1986-11-14 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Monitoring of plasma etching process |
WO2001077406A2 (en) * | 2000-04-07 | 2001-10-18 | Philips Semiconductors, Inc. | A method of determining the end point of a plasma cleaning operation |
US7534469B2 (en) | 2005-03-31 | 2009-05-19 | Asm Japan K.K. | Semiconductor-processing apparatus provided with self-cleaning device |
WO2018193584A1 (en) * | 2017-04-20 | 2018-10-25 | 堺ディスプレイプロダクト株式会社 | Cvd device and cleaning method therefor |
WO2022234831A1 (en) * | 2021-05-06 | 2022-11-10 | 東京エレクトロン株式会社 | Plasma treatment device and endpoint detection method |
-
1984
- 1984-12-19 JP JP26908884A patent/JPH0642457B2/en not_active Expired - Fee Related
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61256637A (en) * | 1985-05-06 | 1986-11-14 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Monitoring of plasma etching process |
JPH0528895B2 (en) * | 1985-05-06 | 1993-04-27 | Intaanashonaru Bijinesu Mashiinzu Corp | |
WO2001077406A2 (en) * | 2000-04-07 | 2001-10-18 | Philips Semiconductors, Inc. | A method of determining the end point of a plasma cleaning operation |
WO2001077406A3 (en) * | 2000-04-07 | 2002-01-24 | Philips Semiconductors Inc | A method of determining the end point of a plasma cleaning operation |
US6543459B1 (en) | 2000-04-07 | 2003-04-08 | Koninklijke Philips Electronics N.V. | Method of determining an end point for a remote microwave plasma cleaning system |
US7534469B2 (en) | 2005-03-31 | 2009-05-19 | Asm Japan K.K. | Semiconductor-processing apparatus provided with self-cleaning device |
WO2018193584A1 (en) * | 2017-04-20 | 2018-10-25 | 堺ディスプレイプロダクト株式会社 | Cvd device and cleaning method therefor |
WO2022234831A1 (en) * | 2021-05-06 | 2022-11-10 | 東京エレクトロン株式会社 | Plasma treatment device and endpoint detection method |
Also Published As
Publication number | Publication date |
---|---|
JPH0642457B2 (en) | 1994-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3766991B2 (en) | End point detection method and apparatus for plasma processing, and semiconductor manufacturing method and apparatus using the detection method and apparatus | |
KR920010726B1 (en) | Method for determining end point of cleaning in an apparatus for manufacturing semiconductor devices | |
KR101355728B1 (en) | Controlling plasma processing using parameters derived through the use of a planar ion flux probing arrangement | |
US8545669B2 (en) | Sensor array for measuring plasma characteristics in plasma processing environments | |
US5169407A (en) | Method of determining end of cleaning of semiconductor manufacturing apparatus | |
JP3893276B2 (en) | Plasma processing equipment | |
JP2003318115A (en) | Window type probe, plasma monitoring apparatus, and plasma treatment apparatus | |
JPS6153728A (en) | Etching end point judging method | |
WO2011036103A1 (en) | Sensor for measuring plasma parameters | |
JPH11354509A (en) | Method for detecting end point of plasma etching and plasma etching device | |
JPS61145825A (en) | Cleaning end detection for plasma chemical vapor deposition apparatus | |
JPS58171821A (en) | Detection of contamination and purification degree in plasma processing and apparatus thereof | |
JPH11293481A (en) | Thin film treating method and device therefor | |
JP2002170812A (en) | Method and device for detecting endpoint of plasma etching, and plasma etching apparatus | |
JPH05175165A (en) | Plasma device | |
JP3702220B2 (en) | Plasma management method | |
JPH07258853A (en) | Method and device for discriminating state of process | |
US20240203713A1 (en) | In-situ diagnosis of plasma system | |
JPH11214363A (en) | Semiconductor manufacture and its device, and semiconductor element | |
JP3609241B2 (en) | Plasma processing apparatus and plasma processing method | |
JPS63211633A (en) | Plasma etching device | |
JPH01301871A (en) | Method for detecting end point of dry etching | |
JP2003151955A (en) | Plasma etching method | |
JP2004128023A (en) | Plasma processing apparatus and method therefor | |
Baker et al. | Micromachined sensor for in-situ monitoring of wafer state in plasma etching |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |