JPH0639714B2 - Chemical copper plating solution - Google Patents

Chemical copper plating solution

Info

Publication number
JPH0639714B2
JPH0639714B2 JP60290069A JP29006985A JPH0639714B2 JP H0639714 B2 JPH0639714 B2 JP H0639714B2 JP 60290069 A JP60290069 A JP 60290069A JP 29006985 A JP29006985 A JP 29006985A JP H0639714 B2 JPH0639714 B2 JP H0639714B2
Authority
JP
Japan
Prior art keywords
copper plating
plating solution
chemical copper
surfactant
fluorine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60290069A
Other languages
Japanese (ja)
Other versions
JPS62149885A (en
Inventor
睦雄 吉沢
博道 木暮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP60290069A priority Critical patent/JPH0639714B2/en
Publication of JPS62149885A publication Critical patent/JPS62149885A/en
Publication of JPH0639714B2 publication Critical patent/JPH0639714B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/38Coating with copper
    • C23C18/40Coating with copper using reducing agents

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は,配線基板等に導体膜を形成するのに用いられ
る化学銅メッキ液に関する。
The present invention relates to a chemical copper plating solution used for forming a conductive film on a wiring board or the like.

〔従来の技術〕[Conventional technology]

無電解メッキ法により,プリント配線基板等に導体膜を
形成するのに使用されている従来の化学銅メッキ液は,
硫酸銅,酢酸銅等の銅塩と,エチレンジアミン四酢酸
塩,トリアミン等の錯化剤と,ホルムアルデヒド等の還
元剤と,水酸化ナトリウム等のPH調整剤と,ジピリジル
等の安定剤と,ポリオキシエチレン誘導体等の非イオン
系界面活性剤を含む水溶液からなる。
The conventional chemical copper plating solution used to form a conductor film on a printed wiring board by electroless plating is
Copper salts such as copper sulfate and copper acetate, complexing agents such as ethylenediaminetetraacetate and triamine, reducing agents such as formaldehyde, pH regulators such as sodium hydroxide, stabilizers such as dipyridyl, polyoxy It consists of an aqueous solution containing a nonionic surfactant such as an ethylene derivative.

これらの化学銅メッキ液から析出したメッキ膜は,適度
の柔軟性を有している。このため,同メッキ膜によって
配線基板等に形成された導電膜は,フロー半田付けの時
に受ける熱応力等によって,容易に破断しないという特
長を有する。
The plating film deposited from these chemical copper plating solutions has appropriate flexibility. Therefore, the conductive film formed on the wiring board or the like by the same plating film has a feature that it is not easily broken by thermal stress or the like received during flow soldering.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

しかしながら,この種の化学銅メッキ液は,メッキ膜の
折出速度が遅く,例えばプリント配線基板の導体とし
て,20μmの厚さの銅メッキ膜を折出させるのに,十数
時間も要するという問題があった。こうしたことから,
適度の柔軟性があるメッキ膜が得られると同時に,メッ
キ膜の折出速度が早い化学銅メッキ液が要望されていた
が,これら2つの特長を同時に備える化学銅メッキ液
は,現時点でまだ得られていない。
However, this type of chemical copper plating solution has a slow plating film deposition rate, and it takes more than ten hours to project a copper plating film having a thickness of 20 μm as a conductor of a printed wiring board, for example. was there. From these things,
There has been a demand for a chemical copper plating solution that can obtain a plating film with appropriate flexibility and at the same time has a high plating film extrusion rate. However, a chemical copper plating solution that has these two features at the same time has not yet been obtained. Has not been done.

本件発明者らは,上記従来の問題点について検討した結
果,或る特殊な界面活性剤の組み合わせによって,適度
の柔軟性を有する銅メッキ膜を,従来のものより早く折
出させることができる化学銅メッキ液が得られることに
着目した。本発明は,これに基づいてなされたもので,
半田付け工程等で,容易破断されない,所要の厚みを有
する銅メッキ膜が短時間で析出できるようにすることを
目的とする。
The inventors of the present invention have studied the above-mentioned conventional problems, and as a result, by combining a certain special surfactant, a copper plating film having an appropriate flexibility can be formed earlier than the conventional one. We focused on obtaining a copper plating solution. The present invention is based on this,
An object of the present invention is to enable a copper plating film having a required thickness, which is not easily broken, to be deposited in a short time in a soldering process or the like.

〔問題を解決するための手段〕[Means for solving problems]

本発明による化学銅メッキ液は,銅塩と,錯化剤と,還
元剤とPH調整剤と,安定剤と,界面活性剤とを含む水溶
液からなるものにおいて,界面活性剤として,水1に
対し,非イオン系界面活性剤を1〜50mgと,弗素系界面
活性剤を10〜100mgの割合で含ませたものである。
The chemical copper plating solution according to the present invention comprises an aqueous solution containing a copper salt, a complexing agent, a reducing agent, a pH adjusting agent, a stabilizer, and a surfactant. On the other hand, 1 to 50 mg of nonionic surfactant and 10 to 100 mg of fluorine surfactant are contained.

〔実施例〕〔Example〕

次に,この発明の実施例について説明する。 Next, an embodiment of the present invention will be described.

(実施例1) まず,脱脂洗浄されたアルミナ基板とステンレス基板,
前処理1液と前処理2液及び化学銅メッキ液を用意し
た。
(Example 1) First, a degreased and cleaned alumina substrate and a stainless steel substrate,
Pretreatment liquid 1 and pretreatment liquid 2 and a chemical copper plating liquid were prepared.

なお,前処理1液は,水1に対して,塩化錫50gと,
塩酸10mlとを含む水溶液からなる。前処理2液は,水1
に対して,塩化パラジウム0.25gと,塩酸10mlとを含
む水溶液からなる。また,化学銅メッキ液は,水1に
対し,銅塩として硫酸銅7.49g,錯化剤としてエチレン
ジアミン四酢酸ソーダ31.6g,PH調整剤として水酸化ナ
トリウム6g,還元剤として,ホルムアルデヒド(37%
液)8cc,安定剤として2〜2ジピリジル30mg,非イ
オン系の界面活性剤としてポリオキシエチレンアルキル
フェニルエーテル1mg,及び弗素系の界面活性剤として
パーフルオロアルキルスルホン酸カリウム30mgを含む水
溶液からなる。この化学銅メッキ液のPH値は,温度25℃
において,12.5であった。
It should be noted that the pretreatment liquid 1 is 50 g of tin chloride with respect to water 1,
It consists of an aqueous solution containing 10 ml of hydrochloric acid. Pretreatment 2 liquid is water 1
On the other hand, it consists of an aqueous solution containing 0.25 g of palladium chloride and 10 ml of hydrochloric acid. In addition, the chemical copper plating solution was prepared by adding 7.49 g of copper sulfate as a copper salt, 31.6 g of sodium ethylenediaminetetraacetate as a complexing agent, 6 g of sodium hydroxide as a PH adjusting agent, and formaldehyde (37% as a reducing agent) to 1 part of water.
Liquid) 8 cc, 2 to 2 dipyridyl 30 mg as a stabilizer, 1 mg of polyoxyethylene alkylphenyl ether as a nonionic surfactant, and 30 mg of potassium perfluoroalkylsulfonate as a fluorine surfactant. The PH value of this chemical copper plating solution is 25 ℃.
At 12.5.

上記アルミナ基板とステンレス基板とを,常温の前処理
1液に浸漬し,3分後に取り出して,水洗し,直ちに常
温の前処理2液に浸漬し,3分後に取り出して水洗し
た。次いで,この基板を70℃に保温されている化学銅メ
ッキ液の中に浸漬した。すると,直ちに基板表面に銅が
折出し始めた。そのまゝ基板をメッキ液の中に放置して
おき,1時間後に取り出して水洗し,乾燥した。
The alumina substrate and the stainless steel substrate were immersed in pretreatment liquid 1 at room temperature, taken out after 3 minutes, washed with water, immediately immersed in pretreatment liquid 2 at room temperature, taken out after 3 minutes and washed with water. Next, this substrate was immersed in a chemical copper plating solution kept at 70 ° C. Immediately, copper began to break out on the board surface. The substrate was left in the plating solution, and after 1 hour, it was taken out, washed with water and dried.

そして,アルミナ基板上に折出した銅メッキ膜の膜厚
を,市販のメッキ膜厚計(SFT-156)によって測定し
た。この結果を,単位時間当たりの銅メッキ膜の析出速
度Csとして表に示した。
Then, the film thickness of the copper plating film projected on the alumina substrate was measured by a commercially available plating film thickness meter (SFT-156). The results are shown in the table as the deposition rate Cs of the copper plating film per unit time.

また,銅メッキ膜の柔軟性を調べるため,ステンレス基
板の表面に析出した銅メッキ膜を,2cm×5cmの矩形に
切り取り,銅箔を取り出した。そして,この銅箔を完全
に二つ折りにし,また元に戻すとう曲げ試験を,折目に
亀裂を生じるまで繰り返し行い,亀裂が生じたときのサ
イクル数Bsを表に示した。
In addition, in order to examine the flexibility of the copper plating film, the copper plating film deposited on the surface of the stainless steel substrate was cut into a rectangle of 2 cm x 5 cm, and the copper foil was taken out. Then, this copper foil was completely folded in two, and a bending test of returning it to its original state was repeated until a crack was formed at the fold, and the number of cycles Bs when the crack was generated is shown in the table.

(実施例2) 実施例1において,化学銅メッキ液中の非イオン系界面
活性剤であるポリオキシエチレンアルキルフェニルエー
テルの濃度を,1mg/から50mg/に変えたこと,及
び弗素系界面活性剤を,パーフルオロアルキルスルホン
酸カリウム30mg/からパーフルオロアルキルカルボン
酸カリウムを80mg/に代えたこと以外は,実施例1と
同じ方法と条件で2種の基板に銅メッキ膜を析出させ
た。
(Example 2) In Example 1, the concentration of polyoxyethylene alkylphenyl ether, which is a nonionic surfactant in the chemical copper plating solution, was changed from 1 mg / to 50 mg /, and a fluorine-based surfactant was used. A copper plating film was deposited on two kinds of substrates under the same method and conditions as in Example 1, except that potassium perfluoroalkyl sulfonate was changed from 30 mg / to potassium perfluoroalkylcarboxylate to 80 mg /.

さらに,上記実施例1と同様にして,メッキ膜の膜厚の
測定と曲げ試験を実施し,この結果を表に示した。
Further, the thickness of the plated film and the bending test were conducted in the same manner as in Example 1 above, and the results are shown in the table.

(実施例3) 実施例1において,化学銅メッキ液中の非イオン系界面
活性剤を,ポリオキシエチレンアルキルフェニルエーテ
ル1mg/から,ポリオキシエチレンアルキルエーテル
5mg/に代えたこと,及び弗素系界面活性剤であるパ
ーフルオロアルキルスルホン酸カリウムの濃度を30mg/
から100mg/に変えたこと以外は,実施例1と同じ
方法と条件で2種の基板に銅メッキ膜を析出させた。
(Example 3) In Example 1, the nonionic surfactant in the chemical copper plating solution was changed from 1 mg / of polyoxyethylene alkyl phenyl ether to 5 mg / of polyoxyethylene alkyl ether, and a fluorine-based interface. Concentration of activator potassium perfluoroalkylsulfonate 30 mg /
The copper plating film was deposited on two kinds of substrates by the same method and conditions as in Example 1 except that the amount was changed to 100 mg /.

さらに,上記実施例1と同様にして,メッキ膜の膜厚の
測定と曲げ試験を実施し,この結果を表に示した。
Further, the thickness of the plated film and the bending test were conducted in the same manner as in Example 1 above, and the results are shown in the table.

(実施例4) 実施例1において,化学銅メッキ液中の非イオン系界面
活性剤を,ポリオキシエチレンアルキルフェニルエーテ
ル1mg/から,ポリオキシエチレンアルキルエーテル
40mg/に代えたこと,及び弗素系界面活性剤を,パー
フルオロアルキルスルホン酸カリウム30mg/から,パ
ーフルオロアルキルスルホン酸アンモニウム40mg/に
代えたこと以外は,実施例1と同じ方法と条件で2種の
基板に銅メッキ膜を析出させた。
(Example 4) In Example 1, the nonionic surfactant in the chemical copper plating solution was changed from polyoxyethylene alkylphenyl ether 1 mg / to polyoxyethylene alkyl ether.
The same method and conditions as in Example 1 were used except that the amount of the fluorosurfactant was changed to 40 mg /, and the fluorine-based surfactant was changed from potassium perfluoroalkylsulfonate of 30 mg / to ammonium perfluoroalkylsulfonate of 40 mg /. A copper plating film was deposited on the seed substrate.

さらに,上記実施例1と同様にしてメッキ膜の膜厚測定
と曲げ試験を実施し,この結果を表に示した。
Further, the thickness of the plated film and the bending test were conducted in the same manner as in Example 1 above, and the results are shown in the table.

(比較例) 実施例1において,化学銅メッキ液中の非イオン系界面
活性剤を,ポリオキシエチレンアルキルフェニルエーテ
ル1mg/から,ポリオキシエチレンアルキルフェニル
エーテル100mgに代えたこと,及び弗素系界面活性剤を
メッキ液に含ませなかったこと以外は,実施例1と同じ
方法と条件で,アルミナ基板とステンレス基板とに銅メ
ッキ膜を析出させた。
(Comparative Example) In Example 1, the nonionic surfactant in the chemical copper plating solution was changed from polyoxyethylene alkylphenyl ether 1 mg / to polyoxyethylene alkylphenyl ether 100 mg, and fluorine-based surfactant was used. A copper plating film was deposited on an alumina substrate and a stainless steel substrate by the same method and conditions as in Example 1 except that the plating solution was not included.

さらに,上記実施例1と同様にしてメッキ膜の膜厚測定
と曲げ試験を実施し,この結果を表に示した。
Further, the thickness of the plated film and the bending test were conducted in the same manner as in Example 1 above, and the results are shown in the table.

表にまとめた結果明らかな通り,非イオン系界面活性剤
と,フッ素系の陰イオン界面活性剤とが,化学銅メッキ
液中に,共に溶存している実施例1〜4の銅メッキ液で
は,非イオン系界面活性剤のみを使用した比較例に比べ
てメッキ膜の折出速度が早い。また,曲げ試験において
も,上記実施例で得られたメッキ膜は,比較例で得られ
たものに比べて,より多くの曲げに耐えることができ
た。
As is clear from the results summarized in the table, in the copper plating solutions of Examples 1 to 4, the nonionic surfactant and the fluorine-based anionic surfactant were both dissolved in the chemical copper plating solution. The deposition rate of the plated film is faster than that of the comparative example using only the nonionic surfactant. Also, in the bending test, the plated films obtained in the above-mentioned examples were able to withstand more bending than those obtained in the comparative examples.

なお,上記実施例で示したように,非イオン系界面活性
剤としては,ポリオキシエチレンの誘導体が,また,弗
素系界面活性剤としては,パーフルオロアルキルスルホ
ン酸塩やパーフルオロアルキルカルボン酸塩が望まし
い。これらの非イオン系界面活性剤と,弗素系界面活性
剤とが上記範囲でメッキ液の中に共に含まれていると,
メッキ膜の析出速度が早く,かつ析出したメッキ膜の柔
軟性が高い。
As shown in the above Examples, the nonionic surfactant is a polyoxyethylene derivative, and the fluorine surfactant is a perfluoroalkyl sulfonate or a perfluoroalkyl carboxylate. Is desirable. If these nonionic surfactants and fluorine-based surfactants are both contained in the plating solution within the above range,
The plating film deposition rate is fast and the deposited plating film is highly flexible.

化学銅メッキ液中に溶融させる界面活性剤の割合を上記
のように限定したのは,次の理由による。
The reason for limiting the ratio of the surfactant to be melted in the chemical copper plating solution as described above is as follows.

弗素系界面活性剤と共にメッキ液に含まれる非イオン系
界面活性剤の割合が,水1に対して1mg未満のとき
は,析出した銅メッキ膜が脆く,半田付け工程等で亀裂
が生じやすい。また逆に,50mg/を超える濃度の化学
銅メッキ液では,銅メッキ膜の析出速度が遅くなり,好
ましくない。
When the ratio of the nonionic surfactant contained in the plating solution together with the fluorine-based surfactant is less than 1 mg relative to 1 part of water, the deposited copper plating film becomes brittle and cracks are likely to occur in the soldering process or the like. On the contrary, a chemical copper plating solution having a concentration of more than 50 mg / s is not preferable because the deposition rate of the copper plating film becomes slow.

他方,非イオン系界面活性剤と共にメッキ液に含まれる
弗素系界面活性剤の濃度が,水1に対して,10mg未満
になると,折出された銅メッキ膜が脆くなり,半田付け
工程等で亀裂が生じやくなるため,好ましくない。これ
に対して,100mg/を超えると,銅メッキ膜の折出速
度が急激に遅くなる。
On the other hand, when the concentration of the fluorine-based surfactant contained in the plating solution together with the nonionic surfactant is less than 10 mg with respect to 1 part of water, the copper plating film that has been extruded becomes brittle, and it may become It is not preferable because it easily cracks. On the other hand, if it exceeds 100 mg /, the protruding speed of the copper-plated film will be drastically reduced.

〔発明の効果〕〔The invention's effect〕

以上説明した通り,本発明の化学銅メッキ液によれば,
従来の化学銅メッキ液を使用したのと同じように,柔軟
な銅メッキ膜を,従来の5〜6分の1程度の時間で折出
させることができる。従って,無電解メッキ法により,
プリント配線基板等に短時間で導体を形成できるという
効果が得られる。
As described above, according to the chemical copper plating solution of the present invention,
Similar to the case of using the conventional chemical copper plating solution, a flexible copper plating film can be projected in about 5 to 1/6 the time of the conventional case. Therefore, by the electroless plating method,
The effect that the conductor can be formed on the printed wiring board or the like in a short time is obtained.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】銅塩と,錯化剤と,還元剤とPH調整剤と,
安定剤と,界面活性剤とを含む水溶液からなる化学銅メ
ッキ液において,界面活性剤として,水1に対し,非
イオン系界面活性剤を1〜50mgと,弗素系界面活性剤を
10〜100mgの割合で含ませたことを特徴とする化学銅メ
ッキ液。
1. A copper salt, a complexing agent, a reducing agent, and a pH adjusting agent,
In a chemical copper plating solution composed of an aqueous solution containing a stabilizer and a surfactant, 1 to 50 mg of a nonionic surfactant and 1 to 50 mg of a fluorine-based surfactant are used as surfactants in water.
A chemical copper plating solution containing 10 to 100 mg.
【請求項2】非イオン系界面活性剤が,ポリオキシエチ
レンの誘導体である特許請求範囲第1項記載の化学銅メ
ッキ液。
2. The chemical copper plating solution according to claim 1, wherein the nonionic surfactant is a derivative of polyoxyethylene.
【請求項3】弗素系界面活性剤がパーフルオロアルキル
スルホン酸塩である特許請求範囲第1項または第2項記
載の化学銅メッキ液。
3. The chemical copper plating solution according to claim 1 or 2, wherein the fluorine-based surfactant is a perfluoroalkyl sulfonate.
【請求項4】弗素系界面活性剤がパーフルオロアルキル
カルボン酸塩である特許請求範囲第1項または第2項記
載の化学銅メッキ液。
4. The chemical copper plating solution according to claim 1 or 2, wherein the fluorine-based surfactant is a perfluoroalkylcarboxylic acid salt.
JP60290069A 1985-12-23 1985-12-23 Chemical copper plating solution Expired - Lifetime JPH0639714B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60290069A JPH0639714B2 (en) 1985-12-23 1985-12-23 Chemical copper plating solution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60290069A JPH0639714B2 (en) 1985-12-23 1985-12-23 Chemical copper plating solution

Publications (2)

Publication Number Publication Date
JPS62149885A JPS62149885A (en) 1987-07-03
JPH0639714B2 true JPH0639714B2 (en) 1994-05-25

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Application Number Title Priority Date Filing Date
JP60290069A Expired - Lifetime JPH0639714B2 (en) 1985-12-23 1985-12-23 Chemical copper plating solution

Country Status (1)

Country Link
JP (1) JPH0639714B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0613753B2 (en) * 1988-09-29 1994-02-23 三晃特殊金属工業株式会社 Method for producing solution containing fine metal body used for electroless plating
US7176133B2 (en) 2004-11-22 2007-02-13 Freescale Semiconductor, Inc. Controlled electroless plating

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5933185A (en) * 1982-08-19 1984-02-22 Ricoh Co Ltd Heat-sensitive transfer medium
JPS6033358A (en) * 1983-08-04 1985-02-20 Hitachi Chem Co Ltd Electroless copper plating liquid

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JPS62149885A (en) 1987-07-03

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