JPH0639693B2 - Dielectric Bias Sputtering Device - Google Patents
Dielectric Bias Sputtering DeviceInfo
- Publication number
- JPH0639693B2 JPH0639693B2 JP60273820A JP27382085A JPH0639693B2 JP H0639693 B2 JPH0639693 B2 JP H0639693B2 JP 60273820 A JP60273820 A JP 60273820A JP 27382085 A JP27382085 A JP 27382085A JP H0639693 B2 JPH0639693 B2 JP H0639693B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate holder
- bias sputtering
- substrate
- target
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Physical Vapour Deposition (AREA)
- Magnetic Heads (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は誘電体バイアススパッタリング装置の改良に関
するものである。TECHNICAL FIELD The present invention relates to an improvement in a dielectric bias sputtering apparatus.
(従来技術) 半導体集積回路の層間絶縁膜や薄膜磁気ヘッドの保護膜
の形成で、回路に段差部がある場合には、形成された膜
にくびれが出来たり段差部で異常層が成長したりして素
子の信頼性を低下させることがしばしばである。この現
象を改善する為、バイアススパッタリング法による成膜
法が採用される例が多い。(Prior Art) In forming an interlayer insulating film of a semiconductor integrated circuit or a protective film of a thin film magnetic head, when a circuit has a step portion, the formed film may be constricted or an abnormal layer may grow at the step portion. Therefore, the reliability of the device is often lowered. In order to improve this phenomenon, a film forming method using a bias sputtering method is often adopted.
バイアススパッタリング用装置としては大別して同軸
型,平行平板型,カルーセル型,プラネタリ型がある
が、機能と生産性の面では、央部で回転する基板ホルダ
ーの筒状の側面上に基板を多数枚装着し、その側面を取
り囲むようにしてターゲットを配置するカルーセル型が
有利である。しかしカルーセル型バイアススパッタリン
グ装置は電極を兼ねる回転基板ホルダーの構造が複雑に
なり(回転基板ホルダーは真空槽内にあることや基板冷
却を要するなどのことから、単純構造を採用できな
い)、その結果、基板ホルダーの露出面が広くなって、
基板部に印加される電力の電力密度が小さくなり、良好
な膜質を得るに必要な大きさに達しないという欠点があ
る。Bias sputtering devices are roughly classified into coaxial type, parallel plate type, carousel type, and planetary type, but in terms of function and productivity, many substrates are placed on the cylindrical side surface of the substrate holder that rotates at the center. A carousel type in which the target is mounted and the target is arranged so as to surround the side surface thereof is advantageous. However, in the carousel type bias sputtering device, the structure of the rotating substrate holder that also serves as an electrode becomes complicated (the rotating substrate holder cannot be a simple structure because it is in a vacuum chamber or requires cooling of the substrate), and as a result, The exposed surface of the substrate holder becomes wider,
There is a drawback in that the power density of the power applied to the substrate part becomes small, and it does not reach the size necessary for obtaining good film quality.
この問題を解決する目的で、従来は、基板の不用露出面
を絶縁物で被覆する方法(第2図)や、金属シールドで
被覆する方法(第3,4図)が採用されていた。For the purpose of solving this problem, conventionally, a method of covering the unnecessary exposed surface of the substrate with an insulator (FIG. 2) and a method of covering with a metal shield (FIGS. 3 and 4) have been adopted.
従来の第2図のカルーセル型誘電体バイアススパッタリ
ング装置(断面図)では真空容器1の壁の一部に、高周
波電源21,マッチング回路20に接続され冷却水路5
を内蔵するターゲットホルダー2,ターゲット3が絶縁
物70を介して設けられ、真空容器1の中央に、冷却水
路5(太線)を通る冷却水で冷却され、図示しない回転
駆動機構を用いて回転駆動される、カルーセル型回転基
板ホルダーが設けられている。7は絶縁性軸受、6は排
気管である。回転基板ホルダー4は同時に、マッチング
回路22を介して高周波電源23に接続され、一方の電
極を兼ねている。In the conventional carousel type dielectric bias sputtering apparatus (cross-sectional view) of FIG. 2, a cooling water channel 5 is connected to a high frequency power source 21 and a matching circuit 20 on a part of the wall of the vacuum container 1.
A target holder 2 and a target 3 each having a built-in are provided via an insulator 70, cooled by cooling water passing through a cooling water passage 5 (thick line) in the center of the vacuum container 1, and rotationally driven by using a rotary drive mechanism (not shown). A carousel-type rotating substrate holder is provided. Reference numeral 7 is an insulating bearing, and 6 is an exhaust pipe. At the same time, the rotating substrate holder 4 is connected to the high frequency power source 23 via the matching circuit 22 and also serves as one electrode.
グロー放電は回転基板ホルダー4の露出面とターゲット
3との間に発生するので、電力密度を上昇させる目的
で、上述のように回転基板ホルダー4の不要露出面を、
0〜2mmの空隙を設けて2〜10mm厚の絶縁物100で
被覆して、その部分の表面がグロー放電に参加しないよ
う、対策が施されている。Since the glow discharge is generated between the exposed surface of the rotating substrate holder 4 and the target 3, the unnecessary exposed surface of the rotating substrate holder 4 is changed as described above for the purpose of increasing the power density.
Measures are taken to prevent the surface of that portion from participating in glow discharge by providing a void of 0 to 2 mm and covering it with an insulator 100 having a thickness of 2 to 10 mm.
しかしこの方法は、複雑な基板ホルダー4の形状に合せ
て、分厚い石英板等の絶縁物100を加工することが必
要で、加工費用が極めて高価になる欠点があった。However, this method has a drawback that the processing cost is extremely high because it is necessary to process the insulator 100 such as a thick quartz plate according to the complicated shape of the substrate holder 4.
従来の第3図のカルーセル型誘電体バイアススパッタリ
ング装置(断面図)には、第2図と同一の部材には同一
の符号を付してあるが、回転基板ホルダー4の不要露出
電極面の全面に対し、2〜3mmの空隙を設けてこれを覆
った、金属性のシールド板110が、上方では真空容器
1の天井面111、下方では底面112に(脚113を
用いて)取付けられている。In the conventional carousel type dielectric bias sputtering apparatus of FIG. 3 (cross-sectional view), the same members as those in FIG. On the other hand, a metallic shield plate 110, which is provided with a gap of 2 to 3 mm and covers it, is attached (using legs 113) to the ceiling surface 111 of the vacuum container 1 above and to the bottom surface 112 below. .
金属性のシールド板110は、材料費も加工費も安価で
あるが、この方法には、広い面積の被覆のために大きい
静電容量Cが形成され、この容量Cを通って高周波電流
が流れ回転基板ホルダー4に印加される電力の一部は無
効となり、シールド板が発熱し、基板の冷却が損なわれ
るという欠点がある。更に、高周波電圧の印加されるシ
ールド板110と脚113が長大であると、大きいL成
分を生成してシールドの効果を減ずるとか、真空容器1
内に生じた塵埃や付着物の除去に意外な工数を消費し、
メンテナンス性を低下させるという欠点もある。Although the metallic shield plate 110 is low in material cost and processing cost, in this method, a large capacitance C is formed due to the coating of a large area, and a high frequency current flows through this capacitance C. There is a drawback that a part of the electric power applied to the rotating substrate holder 4 becomes ineffective, the shield plate generates heat, and cooling of the substrate is impaired. Further, if the shield plate 110 and the leg 113 to which a high frequency voltage is applied are long, a large L component is generated to reduce the shield effect, or the vacuum container 1
Unexpected man-hours are consumed for removing dust and adhering substances generated inside,
It also has the drawback of reducing maintainability.
従来の、第4図のカルーセル型誘電体バイアススパッタ
リング装置は第3図の装置の一部を改良するもので、金
属性シールド板110の被覆面積を小さくする目的で、
ステンレス板114,115で基板ホルダー4のポケッ
ト空間116,117に蓋をしたものである。しかし、
この第4図の装置でも前記したCやLの影響はかなり残
存する。The conventional carousel type dielectric bias sputtering apparatus shown in FIG. 4 is an improvement of a part of the apparatus shown in FIG. 3, and is intended to reduce the coating area of the metallic shield plate 110.
The pocket spaces 116 and 117 of the substrate holder 4 are covered with stainless steel plates 114 and 115. But,
Even in the apparatus shown in FIG. 4, the effects of C and L described above still remain.
(発明の目的) 本発明は、上述の問題点を解決し、基板部に印加される
電力の電力密度の充分に高い、経済的な誘電体バイアス
スパッタリング装置の提供を目的とする。(Object of the Invention) An object of the present invention is to solve the above problems and to provide an economical dielectric bias sputtering apparatus in which the power density of the power applied to the substrate portion is sufficiently high.
(発明の構成) 本発明は、カルーセル型誘電体バイアススパッタリング
装置の、回転基板ホルダーの回転軸方向の上下両端面に
平板状の絶縁物よりなる障壁を設けて当該基板ホルダー
のポケット空間をプラズマに対して区画することによっ
て、前記目的を達成したものである。(Structure of the Invention) The present invention provides a carousel-type dielectric bias sputtering apparatus in which a barrier made of a flat plate-shaped insulator is provided on both upper and lower end surfaces in the rotation axis direction of a rotating substrate holder so that a pocket space of the substrate holder is turned into plasma. The above-mentioned object is achieved by partitioning it.
(実施例) 第1図は本発明の実施例の誘電体バイアススパッタリン
グ装置(断面図)を示し、第2,3,4図と同一の部材
には同一の符号を付してある。新しく設けられた厚さ1
0mmの絶縁物(石英板)よりなる障壁11,12は、回
転基板ホルダー4の回転軸方向の上下両端面に設けられ
た平板状のものである。この障壁11,12は、回転基
板ホルダー4の側面とそれを取り囲むターゲット3との
間のプラズマ放電空間で形成されるプラズマに対して、
回転基板ホルダー4のポケット空間116,117を区
画するものである。この区画によって、ポケット空間1
16,117の中にはプラズマは拡散せず、このポケッ
ト空間に面する回転基板ホルダー4の表面は放電に参与
しなくなる。実験によってもそのことは確認された。そ
のため、見掛け上の回転基板ホルダー4の露出面積は小
さいものになり、基板部の電力密度を高くすることが出
来る。(Embodiment) FIG. 1 shows a dielectric bias sputtering apparatus (cross-sectional view) of an embodiment of the present invention, and the same members as those in FIGS. 2, 3 and 4 are designated by the same reference numerals. New thickness 1
The barriers 11 and 12 made of 0 mm insulator (quartz plate) are flat plates provided on both upper and lower end surfaces of the rotary substrate holder 4 in the rotation axis direction. The barriers 11 and 12 are formed against the plasma formed in the plasma discharge space between the side surface of the rotating substrate holder 4 and the target 3 surrounding it.
The pocket spaces 116 and 117 of the rotary substrate holder 4 are defined. With this compartment, pocket space 1
Plasma does not diffuse into the inside of 16, 117, and the surface of the rotating substrate holder 4 facing this pocket space does not participate in the discharge. Experiments have confirmed this. Therefore, the exposed area of the rotating substrate holder 4 is apparently small, and the power density of the substrate portion can be increased.
絶縁物よりなる障壁11,12は図の基板10の裏面
側、即ちポケット空間116,117を基板10の表面
側、即ち基板10とターゲット3との間のプラズマ放電
空間で形成されるプラズマから隔離し、その絶縁層で電
圧降下を起し、ポケット空間116,117内のプラズ
マ発生を抑制する。この障壁11,12は、ポケット空
間116,117内で回転基板ホルダーに流入する高周
波電力を小さくし、かつ回転時にこのポケット空間11
6,117内でしばしば生ずる異常放電を除去する働き
がある。更にこれを従来の第4図の構造の装置と比較す
るとき、シールド面積はほヾ1/2となっているので電
力が有効に活用される効果もある。The barriers 11 and 12 made of an insulator isolate the back surface side of the substrate 10 in the figure, that is, the pocket spaces 116 and 117 from the plasma formed in the plasma discharge space between the substrate 10 and the front surface of the substrate 10, that is, the target 10. Then, a voltage drop occurs in the insulating layer, and plasma generation in the pocket spaces 116 and 117 is suppressed. The barriers 11 and 12 reduce the high-frequency power that flows into the rotating substrate holder in the pocket spaces 116 and 117, and the pocket spaces 11 and 12 during rotation.
6, 117 has the function of eliminating abnormal discharge that often occurs. Further, when this is compared with the conventional device having the structure shown in FIG. 4, the shield area is approximately 1/2, so that the power can be effectively utilized.
絶縁物よりなる障壁11,12の材質は用途に応じ、石
英のほかアルミナ等のセラミックスも選定でき、その形
状も殆んどの場合、単純な平板か孔あき平板でよいの
で、安価に付加できる。In addition to quartz, ceramics such as alumina can be selected as the material of the barriers 11 and 12 made of an insulating material according to the application, and in most cases, a simple flat plate or a perforated flat plate can be used, so that it can be added inexpensively.
(発明の効果) 本発明は、基板部に印加される電力の電力密度の充分に
高い、経済性に富む誘電性バイアススパッタリング装置
を提供する効果がある。(Effects of the Invention) The present invention has an effect of providing a dielectric bias sputtering apparatus which has a sufficiently high power density of power applied to a substrate portion and is highly economical.
第1図は本発明の実施例の誘電体バイアススパッタリン
グ装置を略示する断面図。 第2,3,4図は従来の同様の図。 1……真空容器、2……ターゲット保持板、3……ター
ゲット、4……回転基板ホルダー、11,12……絶縁
物よりなる障壁、110……シールド板。FIG. 1 is a sectional view schematically showing a dielectric bias sputtering apparatus according to an embodiment of the present invention. Figures 2, 3 and 4 are similar to the conventional figures. 1 ... Vacuum container, 2 ... Target holding plate, 3 ... Target, 4 ... Rotating substrate holder, 11, 12 ... Barrier made of insulating material, 110 ... Shield plate.
Claims (1)
カルーセル型回転基板ホルダーと、この回転基板ホルダ
ーの側面を取り囲むようにして配置されたターゲットと
を有し、基板を保持した回転基板ホルダーの側面とター
ゲットとの間のプラズマ放電空間においてプラズマを形
成してスパッタリングを行う誘電体バイアススパッタリ
ング装置に於いて、前記回転基板ホルダーの回転軸方向
の上下両端面に平板状の絶縁物よりなる障壁を設けて当
該基板ホルダーのポケット空間を前記プラズマに対して
区画したことを特徴とする誘電体バイアススパッタリン
グ装置。1. A rotary substrate holding a substrate, which has a carousel-type rotary substrate holder configured to rotatably hold a substrate on a side surface and a target arranged to surround the side surface of the rotary substrate holder. In a dielectric bias sputtering apparatus for forming plasma in a plasma discharge space between a side surface of a holder and a target to perform sputtering, a flat plate-shaped insulator is formed on both upper and lower end surfaces in the rotation axis direction of the rotating substrate holder. A dielectric bias sputtering apparatus characterized in that a barrier is provided to partition a pocket space of the substrate holder with respect to the plasma.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60273820A JPH0639693B2 (en) | 1985-12-05 | 1985-12-05 | Dielectric Bias Sputtering Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60273820A JPH0639693B2 (en) | 1985-12-05 | 1985-12-05 | Dielectric Bias Sputtering Device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62133065A JPS62133065A (en) | 1987-06-16 |
JPH0639693B2 true JPH0639693B2 (en) | 1994-05-25 |
Family
ID=17533012
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60273820A Expired - Lifetime JPH0639693B2 (en) | 1985-12-05 | 1985-12-05 | Dielectric Bias Sputtering Device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0639693B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103498128A (en) * | 2012-04-29 | 2014-01-08 | 江苏中能硅业科技发展有限公司 | Magnetron sputtering coating device and coating method |
Families Citing this family (5)
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---|---|---|---|---|
TWI693860B (en) | 2017-06-27 | 2020-05-11 | 日商佳能安內華股份有限公司 | Plasma treatment device |
KR102361377B1 (en) | 2017-06-27 | 2022-02-10 | 캐논 아네르바 가부시키가이샤 | plasma processing unit |
PL3648550T3 (en) | 2017-06-27 | 2021-11-22 | Canon Anelva Corporation | Plasma treatment device |
WO2019003309A1 (en) | 2017-06-27 | 2019-01-03 | キヤノンアネルバ株式会社 | Plasma treatment device |
WO2020003557A1 (en) | 2018-06-26 | 2020-01-02 | キヤノンアネルバ株式会社 | Plasma treatment device, plasma treatment method, program, and memory medium |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0084971B2 (en) * | 1982-01-26 | 1990-07-18 | Materials Research Corporation | A method for reactive bias sputtering |
-
1985
- 1985-12-05 JP JP60273820A patent/JPH0639693B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103498128A (en) * | 2012-04-29 | 2014-01-08 | 江苏中能硅业科技发展有限公司 | Magnetron sputtering coating device and coating method |
Also Published As
Publication number | Publication date |
---|---|
JPS62133065A (en) | 1987-06-16 |
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