JPH063816B2 - Semiconductor element soldering equipment - Google Patents
Semiconductor element soldering equipmentInfo
- Publication number
- JPH063816B2 JPH063816B2 JP16495783A JP16495783A JPH063816B2 JP H063816 B2 JPH063816 B2 JP H063816B2 JP 16495783 A JP16495783 A JP 16495783A JP 16495783 A JP16495783 A JP 16495783A JP H063816 B2 JPH063816 B2 JP H063816B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- liquid crystal
- crystal display
- display substrate
- hot air
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Die Bonding (AREA)
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明はガラス基板などのプレート表面上に配置した半
導体素子を加熱してはんだ付けする半導体素子のはんだ
付け装置に関する。Description: FIELD OF THE INVENTION The present invention relates to a semiconductor element soldering apparatus for heating and soldering a semiconductor element arranged on a plate surface such as a glass substrate.
従来、プレート表面に半導体素子をはんだ付けするに
は、第１図に示すように、プレート１の表面上の所定位
置に半導体素子２をフラックスなどで仮固定しておき、
プレート１の上方および下方にそれぞれ前記半導体素子
２に対応した部分に穴３ａ，４ａを有するマスク３、４
を配設し、更にマスク３の上方およびマスク４の下方に
それぞれ赤外線照射器５、６を配設し、赤外線照射器
５、６によりマスク３、４を通して赤外線照射して半導
体素子２をプレート１表面上にはんだ付けする方法が一
般的に行なわれている。Conventionally, in order to solder a semiconductor element to the surface of a plate, as shown in FIG. 1, the semiconductor element 2 is temporarily fixed at a predetermined position on the surface of the plate 1 with flux or the like.
Masks 3 and 4 having holes 3a and 4a in portions corresponding to the semiconductor element 2 above and below the plate 1, respectively.
Infrared irradiators 5 and 6 are arranged above the mask 3 and below the mask 4, respectively, and infrared rays are radiated through the masks 3 and 4 by the infrared irradiators 5 and 6 to irradiate the semiconductor element 2 to the plate 1. The method of soldering on the surface is generally used.
ところで、半導体素子２は赤外線を吸収し易いので昇温
し易く、他方プレート１は赤外線を透過し易いので熱吸
収が遅く昇温し難い。この結果、半導体素子２とプレー
ト１との接触部にクラックが発生したりする問題があ
り、良好なはんだ付けが困難であった。By the way, since the semiconductor element 2 easily absorbs infrared rays, the temperature rises easily. On the other hand, the plate 1 easily transmits infrared rays, so that the heat absorption is slow and the temperature rise is difficult. As a result, there is a problem that a crack is generated in the contact portion between the semiconductor element 2 and the plate 1, and good soldering is difficult.
本発明の目的は、プレートのクラック不良を防止するこ
とができる半導体素子のはんだ付け装置を提供すること
にある。An object of the present invention is to provide a soldering apparatus for semiconductor elements, which can prevent crack defects in the plate.
このような目的を達成するために、本発明は、基本的に
は、光透過性を有する液晶表示基板の主表面に半導体素
子をはんだ付けをする半導体素子のはんだ付け装置にお
いて、前記液晶表示基板の主表面側に配置された赤外線
照射手段と、この赤外線照射手段と該液晶表示基板との
間に配置され、前記半導体素子に対向する領域に窓開け
がなされたマスクと、前記液晶表示基板の主表面と反対
側に配置され、不活性ガスからなる熱風を該液晶表示基
板側に吹き付ける加熱手段と、この加熱手段と該液晶表
示基板との間に配置され、前記半導体素子に対向する領
域に窓開けがなされたマスクと、を備えたことを特徴と
するものである。In order to achieve such an object, the present invention is basically a semiconductor device soldering apparatus for soldering a semiconductor device to a main surface of a liquid crystal display substrate having light transmissivity. Of the infrared irradiating means arranged on the main surface side of the liquid crystal display substrate, a mask disposed between the infrared irradiating means and the liquid crystal display substrate and having a window opened in a region facing the semiconductor element, A heating unit which is arranged on the side opposite to the main surface and blows hot air made of an inert gas toward the liquid crystal display substrate side, and a heating unit which is arranged between the heating unit and the liquid crystal display substrate and which faces the semiconductor element. It is characterized by having a mask with a window opened.
このように構成した半導体素子のはんだ付け装置は、該
半導体素子を特に液晶表示基板の主表面側にはんだ付け
する場合におけるものである。The semiconductor element soldering device thus configured is for soldering the semiconductor element particularly to the main surface side of the liquid crystal display substrate.
この場合、該半導体素子を搭載する領域のみを加熱し、
液晶層の介在されている他の領域を加熱しないことが要
請される。けだし、液晶の加熱は約１００℃程度が限度
で、それ以上の加熱は液晶を劣化させてしまうからであ
る。In this case, only the region where the semiconductor element is mounted is heated,
It is required not to heat other intervening regions of the liquid crystal layer. This is because the temperature of the liquid crystal is limited to about 100 ° C., and heating above that causes the liquid crystal to deteriorate.
このため、一の加熱源で選択的な領域加熱できることが
要求されるとともに、加熱処理の終了に際して、即温度
の降下を期待できるようなレスポンスの速いものが要求
される。For this reason, it is required that a single heating source can selectively heat the area, and a fast response that can be expected to immediately drop the temperature at the end of the heat treatment.
このことから、熱源として、赤外線を半導体素子の対応
する領域に窓開けがなされたマスクを通して照射するの
が最も好ましくなる。From this, it is most preferable to irradiate infrared rays as a heat source through a mask in which a corresponding region of the semiconductor element is opened.
しかし、液晶表示基板の半導体素子がはんだ付けされる
主表面側と反対側の面からの加熱も同様な構成とするこ
との弊害は、上述で詳述した通りである。However, the harmful effect of having the same configuration for heating from the surface opposite to the main surface side of the liquid crystal display substrate to which the semiconductor element is soldered is as described above in detail.
このことから、本発明は、特に、不活性ガスからなる熱
風を前記半導体素子に対向する領域に窓開けがなされた
マスクを通して、吹き付けるように構成しているもので
ある。For this reason, the present invention is particularly configured to blow hot air composed of an inert gas through a mask having a window opened in a region facing the semiconductor element.
これにより、本発明は、液晶表示基板に半導体素子をは
んだ付けするという特殊性に鑑み、赤外線照射手段と熱
風の吹き付け手段とのコンビネーションによって効果を
極めて大ならしめることができるようになる。Thus, in view of the peculiarity of soldering the semiconductor element to the liquid crystal display substrate, the present invention can achieve a very large effect by the combination of the infrared irradiation means and the hot air blowing means.
以下、本発明の一実施例を第２図により説明する。半導
体素子２がフラックスなどで仮固定されたプレート１の
上方には、従来と同様に半導体素子２に対応した部分に
穴３ａを有するマスク３が配設され、更にこのマスク３
の上方に赤外線照射器５が配設されている。An embodiment of the present invention will be described below with reference to FIG. A mask 3 having a hole 3a in a portion corresponding to the semiconductor element 2 is disposed above the plate 1 on which the semiconductor element 2 is temporarily fixed with flux or the like.
Infrared irradiator 5 is arranged above.
前記プレート１の下方には上部にスリット穴10ａを有す
る外筒１０が配設されている。外筒１０の内部には回転
シール用パッキン１１を介して内筒１２が回転自在に設
けられている。内筒１２には半導体素子２の横配列と同
じ間隔に所定の大きさの穴１２ａ、１２ｂ…が設けられ
ている。ここで、穴１２ａは図示の実施例に示す半導体
素子２の間隔に適合する場合を示し、穴１２ｂは品種切
換によって半導体素子２の間隔が変った場合に適合する
ように形成されている。前記内筒１２の端部にはギヤ１
３が固定されており、このギヤ１３はモータ１４の回転
軸に固定されたギヤ１５に噛合している。An outer cylinder 10 having a slit hole 10a in the upper part is arranged below the plate 1. An inner cylinder 12 is rotatably provided inside the outer cylinder 10 via a rotary seal packing 11. The inner cylinder 12 is provided with holes 12a, 12b ... Having a predetermined size at the same intervals as the lateral arrangement of the semiconductor elements 2. Here, the holes 12a show the case where the distance between the semiconductor elements 2 shown in the illustrated embodiment is fitted, and the hole 12b is formed so as to fit when the distance between the semiconductor elements 2 changes due to the type change. A gear 1 is provided at the end of the inner cylinder 12.
3 is fixed, and this gear 13 meshes with a gear 15 fixed to the rotating shaft of the motor 14.
前記内筒１２の内部には熱風供給器１６よりN2ガスなど
の不活性ガスが供給される。熱風供給器１６の熱風循環
系統は、高圧N2ガスをバルブ１７、加熱器１８を通して
内筒１２内に供給し、内筒１２内のN2ガスはバルブ１９
を通して加熱器１８の入口部に入るようになっている。
熱風の温度は、内筒１２の入口部に設けた熱電対２０に
より検出され、温調器２１により加熱器１８の加熱電源
２２をコントロールして調整される。An inert gas such as N 2 gas is supplied from the hot air supplier 16 into the inner cylinder 12. The hot air circulation system of the hot air supply device 16 supplies high-pressure N 2 gas into the inner cylinder 12 through the valve 17 and the heater 18, and the N 2 gas in the inner cylinder 12 is supplied to the valve 19
It is adapted to enter the inlet part of the heater 18 through.
The temperature of the hot air is detected by the thermocouple 20 provided at the inlet of the inner cylinder 12, and the temperature controller 21 controls the heating power source 22 of the heater 18 to adjust the temperature.
次に作用について説明する。プレート１に熱風を吹き付
ける際には、バルブ１９を閉とし、モータ１４を駆動し
て内筒１２を回転させて穴１２ａが図のようにスリット
１０ａに対応するようにする。これにより、バルブ１７
から加熱器１８を通し内筒１２内に送られたN2ガスの熱
風は、内筒１２の穴１２ａ、外筒１０のスリット１０ａ
を通してプレート１の下面に吹き付けられる。また半導
体素子２の上面には赤外線照射器５よりマスク３の穴３
ａを通して赤外線が照射される。Next, the operation will be described. When blowing hot air onto the plate 1, the valve 19 is closed and the motor 14 is driven to rotate the inner cylinder 12 so that the hole 12a corresponds to the slit 10a as shown in the drawing. This allows the valve 17
The hot air of N 2 gas sent from the heater 18 through the heater 18 into the inner cylinder 12 has a hole 12a in the inner cylinder 12 and a slit 10a in the outer cylinder 10.
Is sprayed onto the lower surface of the plate 1. Further, on the upper surface of the semiconductor element 2, the hole 3 of the mask 3
Infrared rays are emitted through a.
このように、半導体素子２は上方から赤外線照射によっ
て加熱され、プレート１の半導体素子２の部分は熱風に
よって加熱されるので、プレート１の半導体素子２部分
も昇温する。従って、半導体素子２とプレート１との温
度差が小さくなり、プレート１のクラックが防止され、
均一にはんだ付けされる。また内筒１２は回転自在に設
けられているので、品種切換の場合は単に内筒１２を回
転させるのみでその品種に適合した穴１２ａ、１２ｂ…
を容易に選択できる。また熱風は流れを停止すると瞬時
に所定温度にコントロールするのが不可能であるが、内
筒１２は回転自在に設けられているので、熱風の吹き付
けを停止する際には、モータ１４によって内筒１２を回
転させて内筒１２の穴加工されていない盲位置を上方に
して外筒１０のスリット穴１０ａを塞ぎ、バルブ１９を
開、バブル１７を閉とすることにより熱風の流れを停止
させないで行なうことができる。In this way, the semiconductor element 2 is heated by infrared irradiation from above, and the portion of the semiconductor element 2 of the plate 1 is heated by the hot air, so that the semiconductor element 2 portion of the plate 1 also rises in temperature. Therefore, the temperature difference between the semiconductor element 2 and the plate 1 is reduced, cracks in the plate 1 are prevented,
Solder evenly. Further, since the inner cylinder 12 is rotatably provided, when the product type is switched, the holes 12a, 12b, ...
Can be easily selected. Although it is impossible to control the temperature of the hot air to a predetermined temperature instantly when the flow of the hot air is stopped, since the inner cylinder 12 is rotatably provided, the motor 14 is used to stop the blowing of the hot air. Do not stop the flow of hot air by rotating 12 to close the slit hole 10a of the outer cylinder 10 with the blind position where the inner cylinder 12 is not drilled upward, and to open the valve 19 and close the bubble 17. Can be done.
本発明によれば、プレートに不活性ガスの熱風を吹き付
けて局部的に加熱するので、光透過性が大きいプレート
のクラックが防止され、均一にはんだ付けされる。また
熱風を吹き出す回転自在な円筒を設けることにより、品
種切換に容易に対処できると共に、温度コントロールが
容易に行なえる。According to the present invention, hot air of an inert gas is blown to the plate to locally heat the plate, so that cracks in the plate having high light transmittance are prevented and soldering is performed uniformly. Further, by providing a rotatable cylinder that blows out hot air, it is possible to easily cope with product type switching and easily control the temperature.
【図面の簡単な説明】 第１図は従来例の説明図、第２図は本発明の一実施例を
示す説明図である。 １…プレート、２…半導体素子、 ５…赤外線照射器、１０…外筒、 １０ａ…スリット穴、１２…内筒、 １２ａ、１２ｂ…熱風吹き出し用穴、 １３…ギヤ、１４…モータ、１５…ギヤ、 １６…熱風供給器。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an explanatory view of a conventional example, and FIG. 2 is an explanatory view showing an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1 ... Plate, 2 ... Semiconductor element, 5 ... Infrared irradiator, 10 ... Outer cylinder, 10a ... Slit hole, 12 ... Inner cylinder, 12a, 12b ... Hot air blowing hole, 13 ... Gear, 14 ... Motor, 15 ... Gear , 16 ... Hot air supply device.
Claims (1)
半導体素子をはんだ付けをする半導体素子のはんだ付け
装置において、 前記液晶表示基板の主表面側に配置された赤外線照射手
段と、 この赤外線照射手段と該液晶表示基板との間に配置さ
れ、前記半導体素子に対向する領域に窓開けがなされた
マスクと、 前記液晶表示基板の主表面と反対側に配置され、不活性
ガスからなる熱風を該液晶表示基板側に吹き付ける加熱
手段と、 この加熱手段と該液晶表示基板との間に配置され、前記
半導体素子に対向する領域に窓開けがなされたマスク
と、 を備えたことを特徴とする半導体素子のはんだ付け装
置。1. A semiconductor element soldering device for soldering a semiconductor element to a main surface of a liquid crystal display substrate having light transmissivity, the infrared irradiation means being disposed on the main surface side of the liquid crystal display substrate. A mask, which is arranged between the infrared irradiation means and the liquid crystal display substrate and has a window opened in a region facing the semiconductor element, and which is arranged on the opposite side of the main surface of the liquid crystal display substrate and made of an inert gas. Heating means for blowing hot air to the liquid crystal display substrate side; and a mask provided between the heating means and the liquid crystal display substrate and having a window opened in a region facing the semiconductor element. Equipment for soldering semiconductor elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16495783A JPH063816B2 (en) | 1983-09-09 | 1983-09-09 | Semiconductor element soldering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16495783A JPH063816B2 (en) | 1983-09-09 | 1983-09-09 | Semiconductor element soldering equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6057637A JPS6057637A (en) | 1985-04-03 |
| JPH063816B2 true JPH063816B2 (en) | 1994-01-12 |
Family
ID=15803073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16495783A Expired - Lifetime JPH063816B2 (en) | 1983-09-09 | 1983-09-09 | Semiconductor element soldering equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH063816B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0230137Y2 (en) * | 1985-12-11 | 1990-08-14 | ||
| JPS62113865U (en) * | 1985-12-28 | 1987-07-20 | ||
| JPH0641713Y2 (en) * | 1985-12-28 | 1994-11-02 | パイオニア株式会社 | Heat processing equipment using optical beam |
| US4771929A (en) * | 1987-02-20 | 1988-09-20 | Hollis Automation, Inc. | Focused convection reflow soldering method and apparatus |
| DE3737457A1 (en) * | 1987-11-04 | 1989-05-18 | Peter Gammelin | SOLDERING DEVICE |
| JPS6434578A (en) * | 1987-07-29 | 1989-02-06 | Jiyaade Kk | Automatic soldering method and device for printed circuit board |
-
1983
- 1983-09-09 JP JP16495783A patent/JPH063816B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6057637A (en) | 1985-04-03 |
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