JPH06350137A - Nitrogen-iii-compound semiconductor luminous element - Google Patents

Abstract

PURPOSE:To significantly reduce manufacturing time and enable efficient mass production by, after adding magnesium to a p-layer, applying a pulsating planar electron beam to the entire surface of a wafer to form luminous elements. CONSTITUTION:A single crystal sapphire substrate 1 is etched in a vapor phase, and then a buffer layer 2, a high carrier concentration n-<+>-layer 3 and a low carrier concentration n-layer 4 are formed. Then a low carrier concentration p-layer 51 and a high carrier concentration p<+>-layer 52 are formed. The high carrier concentration p<+>-layer 52 and the low carrier concentration p-layer 51 are uniformly irradiated with a pulsating electron beam expanded in a plane form, usually used in quenching of carbon steel, using an electron beam irradiation equipment. The irradiation by the electron beam turns the layers into conductor of p-conductivity type having a different hole concentration and resistivity, and obtains a wafer of multilayer structure. Subsequently, the obtained wafer is cut into elements.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a blue light-emitting nitrogen-group III compound semiconductor light-emitting device.

[0002]

2. Description of the Related Art Conventionally, as a blue light emitting diode, one using a GaN compound semiconductor has been known. Its GaN
Since the compound semiconductors of the type are direct transition type, they have high luminous efficiency, and blue, which is one of the three primary colors of light, is used as the emission color, and so on.

Recently, it has become clear that p-type GaN can be obtained by doping Mg and irradiating it with an electron beam. As a result, the conventional n layer and semi-insulating layer (i
A GaN light emitting diode having a pn junction instead of a junction with a layer) has been proposed.

[0004]

However, the above-mentioned light emitting diode having a pn junction has the following drawbacks when obtaining p-type GaN.
It irradiates a substrate with a finely focused electron beam while scanning and is not suitable for mass production. Therefore, an object of the present invention is to provide a compound semiconductor of nitrogen group-3 (Al _x
Ga _Y In _1-XY N; including X = 0, Y = 0, X = Y = 0) The manufacturing time of the light emitting diode is extremely shortened, and efficient mass production is possible.

[0005]

The present invention is directed to n-type nitrogen-
Group 3 element compound semiconductor (Al _x Ga _Y In _1-XY N; X = 0, Y = 0, X = Y = 0
Layer) and a p-type layer composed of a p-type nitrogen-group III element compound semiconductor (including Al _x Ga _Y In _1-XY N; X = 0, Y = 0, X = Y = 0) In the nitrogen-group 3 element compound semiconductor light emitting device having and, the p-layer is formed by adding magnesium (Mg) and then irradiating a pulsed electron beam spread in a planar manner over the entire surface of the wafer. element.

The n-type layer and the p-type layer directly involved in the above pn junction have a carrier concentration of 1 × 10 ¹⁴ to 1 × 10 ¹⁶ / cm ^3.
It is desirable that they are substantially equal within the range.

[0007]

According to the present invention, a light emitting diode having a p layer and an n layer is formed by adding magnesium (Mg) to the p layer and then irradiating the entire surface of the wafer with a pulsed electron beam in a planar manner. Therefore, the manufacturing time is extremely shortened, and efficient mass production is possible.

[0008]

First Embodiment Referring to FIG. 1, a light emitting diode 10 has a sapphire substrate 1, and the sapphire substrate 1 has 500 Å AlN.
Buffer layer 2 is formed. On the buffer layer 2, a high carrier concentration n ⁺ layer 3 made of silicon-doped GaN with a film thickness of about 3 μm and an electron concentration of 2 × 10 ¹⁸ / cm ³ is provided in this order.
Non-doped GaN with a film thickness of about 5000Å and electron concentration of 1 × 10 ¹⁶ / cm ³ .
And a low carrier concentration n layer 4 is formed. Further, on the low carrier concentration n layer 4, a film thickness of about 0.5 is formed in order.
μm, low carrier concentration p-layer 51 made of Mg-doped GaN with hole concentration of 1 × 10 ¹⁶ / cm ³ , film thickness of about 0.2 μm, hole concentration
A high carrier concentration p ⁺ layer 52 of 2 × 10 ¹⁷ / cm ³ is formed. Then, an electrode 7 made of nickel and connected to the high carrier concentration p ⁺ layer 52 and an electrode 8 made of nickel and connected to the high carrier concentration n ⁺ layer 3 are formed. The electrode 8 and the electrode 7 are electrically insulated and separated by the groove 9.

Next, a method of manufacturing the light emitting diode 10 having this structure will be described. The light emitting diode 10 is
It was manufactured by vapor phase epitaxy by an organometallic compound vapor phase epitaxy method (hereinafter referred to as "M0VPE"). The gas used is NH
₃ and carrier gas H ₂ and trimethylgallium (Ga (CH ₃ ) ₃ ).
(Hereinafter referred to as "TMG") and trimethyl aluminum (Al
(CH _{3) 3)} is referred to (hereinafter referred to as "TMA") and silane (SiH ₄₎ and bis-cyclopentadienyl magnesium _{(Mg (C 5 H 5)} 2) ( hereinafter "CP ₂ Mg").

First, the single-crystal sapphire substrate 1 whose main surface is the A-plane cleaned by organic cleaning and heat treatment is mounted on a susceptor placed in the reaction chamber of the M0VPE apparatus. Then, at a pressure of 1100 while flowing H ₂ into the reaction chamber at a flow rate of 2 liter / min under normal pressure.
The sapphire substrate 1 was vapor-phase etched at 0 ° C.

Next, the temperature is lowered to 400 ° C. and H ₂ is added.
20 liter / min, NH ₃ 10 liter / min, TMA 1.8 × 10 ^-5
The buffer layer 2 of AlN was formed at a thickness of about 500Å by supplying at a mol / min. Next, the temperature of the sapphire substrate 1 is set to 1150.
Hold at ₂ ℃, H ₂ 10 liter / min, NH ₃ 5 liter / min,
Silane (SiH ₄ ) diluted with TMG at 3.7 × 10 ^-4 mol / min and 0.86 ppm with H ₂ was supplied at a rate of 750 ml / min for 15 minutes to obtain a film thickness of about 3 μm and electron concentration of 2 × 10 ¹⁸ / cm 2. ^A high carrier concentration n ⁺ layer 3 made of GaN 3 was formed.

Then, the temperature of the sapphire substrate 1 is set to 1150 ° C.
Hold, H ₂ 10 liter / min, NH ₃ 5 liter / min, TMG
Is supplied at a rate of 1.8 × 10 ^-4 mol / min for 5 minutes to obtain a film thickness of about 5
A low carrier concentration n layer 4 made of GaN with an electron concentration of 1 × 10 ¹⁶ / cm ³ was formed at 000Å.

Next, the sapphire substrate 1 is heated to 1150 ° C.,
H ₂ 10 liter / min, NH ₃ 5 liter / min, TMG 1.8
× 10 ^-4 mol / min, CP ₂ Mg at a rate of 4.3 × 10 ^-7 mol / min
By supplying for 5 minutes, a low carrier concentration p-layer 51 made of GaN having a film thickness of 0.5 μm was formed. In this state, the low carrier concentration p layer 51 is still an insulator having a resistivity of 10 ⁸ Ωcm or more.

Next, the sapphire substrate 1 is heated to 1150 ° C.,
H ₂ 10 liter / min, NH ₃ 5 liter / min, TMG 1.8
X 10 ^-4 mol / min, CP ₂ Mg at a rate of 8 x 10 ^-7 mol / min 2
By supplying for a minute, a high carrier concentration p ⁺ layer 52 made of GaN having a film thickness of 0.2 μm was formed. In this state, the high carrier concentration p ⁺ layer 52 is still an insulator having a resistivity of 10 ⁸ Ωcm or more.

Next, using the electron beam irradiation device used for quenching of carbon steel and capable of irradiating the electron beam spread in a plane with a pulse, the above high carrier concentration p ⁺ layer 5 is used.
2 and the low carrier concentration p-layer 51 were uniformly irradiated with an electron beam. The electron beam irradiation conditions are an acceleration voltage of 35 KV, an electron beam current density of 2.4 KA / cm ² , and a vacuum degree of 2.1 × 10 ^-5 Torr. By this electron beam irradiation, a low carrier concentration p
The layer 51 has a hole concentration of 1 × 10 ¹⁶ / cm ³ and a resistivity of 40 Ωcm.
It became a conduction type semiconductor, and the high carrier concentration p ⁺ layer 52 became a p conduction type semiconductor with a hole concentration of 2 × 10 ¹⁷ / cm ³ and a resistivity of 2 Ωcm. In this way, a wafer having a multilayer structure as shown in FIG. 2 was obtained.

FIGS. 3 to 7 described below are cross-sectional views showing only one element on the wafer. In fact, a wafer in which this element is continuously repeated is processed, and then each of the elements is processed. It is cut for each element.

As shown in FIG. 3, a SiO ₂ layer 11 of 2000 Å is sputtered on the high carrier concentration p ⁺ layer 52.
Formed to a thickness of. Next, a photoresist 12 was applied on the SiO ₂ layer 11. Then, by photolithography, on the high carrier concentration p ⁺ layer 52, the electrode formation portion A corresponding to the hole 15 formed to reach the high carrier concentration n ⁺ layer 3 and the electrode formation portion thereof are formed into the high carrier concentration p ^{+ layer.}
The photoresist at the portion B where the groove 9 for insulating and separating from the electrode of the layer 52 is formed is removed.

Next, as shown in FIG. 4, the SiO ₂ layer 11 not covered with the photoresist 12 was removed with a hydrofluoric acid type etching solution. Next, as shown in FIG.
The high carrier concentration p ⁺ layer 52 in a portion not covered by the photoresist 12 and the SiO ₂ layer 11 and the upper surface of the low carrier concentration p layer 51, the low carrier concentration n layer 4, and the high carrier concentration n ⁺ layer 3 thereunder. The portion was dry-etched by supplying a vacuum degree of 0.04 Torr, high-frequency power of 0.44 W / cm ² , and BCl ₃ gas at a rate of 10 ml / min, and then dry etching with Ar. In this step, a hole 15 for taking out an electrode and a groove 9 for insulation separation were formed for the high carrier concentration n ⁺ layer 3.

Next, as shown in FIG. 6, the SiO ₂ layer 11 remaining on the high carrier concentration p ⁺ layer 52 was removed with hydrofluoric acid. Next, as shown in FIG.
The Ni layer 13 was formed by vapor deposition. As a result, the Ni layer 13 electrically connected to the high carrier concentration n ⁺ layer 3 is formed in the hole 15. Then, a photoresist 14 is applied onto the Ni layer 13, and by photolithography, the photoresist 14 is left with an electrode portion for the high carrier concentration n ⁺ layer 3 and the high carrier concentration p ⁺ layer 52.
A pattern was formed into a predetermined shape.

Next, as shown in FIG. 7, the exposed portion of the lower Ni layer 13 was etched with a nitric acid-based etching solution using the photoresist 14 as a mask. At this time, the Ni layer 13 deposited in the groove 9 for insulation separation is completely removed.
Next, the photoresist 14 is removed with acetone, the electrode 8 of the high carrier concentration n ⁺ layer 3 and the high carrier concentration p ⁺ layer 52 are removed.
Of the electrode 7 was left. Then, the wafer treated as described above was cut into each element to obtain a pn structure gallium nitride-based light emitting element shown in FIG.

Further, a part of GaN doped with magnesium was masked, and the electron beam was uniformly irradiated with the electron beam using the above-mentioned electron beam irradiation device. Then, the irradiated portion and the non-irradiated portion were irradiated with He—Cd laser to measure the photoluminescence intensity. The result is shown in FIG. Curves A and B respectively show the wavelength characteristics of the photoluminescence intensity of the portion irradiated with the electron beam. It can be seen that the photoluminescence intensity of the part irradiated with the electron beam is 1.5 times stronger than that of the part not irradiated.

The magnesium Mg doping gas used in the above embodiment may be methylbiscyclopentadienyl magnesium Mg (C ₆ H ₇ ) ₂ in addition to the above gases.

The electron concentration of the low carrier concentration n layer 4 is 1
It is desirable that the film thickness is x10 ¹⁴ to 1x10 ¹⁶ / cm ³ and the film thickness is 0.5 to 2 µm. When the electron concentration is 1 × 10 ¹⁶ / cm ³ or more, the emission intensity decreases, which is not desirable. When the electron concentration is 1 × 10 ¹⁴ / cm ³ or less, the series resistance of the light emitting element becomes too high and heat is generated when an electric current is applied. . Further, if the film thickness is 2 μm or more, the series resistance of the light emitting element becomes too high and heat is generated when an electric current is applied.

Further, the high carrier concentration n ⁺ layer 3 preferably has an electron concentration of 1 × 10 ¹⁶ to 1 × 10 ¹⁹ / cm ³ and a film thickness of 2 to 10 μm. When the electron concentration is 1 × 10 ¹⁹ / cm ³ or more, the crystallinity is deteriorated, which is not desirable. When the electron concentration is 1 × 10 ¹⁶ / cm ³ or less, the series resistance of the light emitting element becomes too high and heat is generated when a current is applied, which is not desirable. . Further, if the film thickness is 10 μm or more, the substrate is curved, which is not desirable, and if the film thickness is 2 μm or less, the series resistance of the light emitting element becomes too high and heat is generated when an electric current is applied, which is not desirable.

The low carrier concentration p-layer 51 has a hole concentration of 1 × 10 ¹⁴ to 1 × 10 ¹⁶ / cm ³ and a film thickness of 0.2 to 1 μm.
Is desirable. When the hole concentration is 1 × 10 ¹⁶ / cm ³ or more, the matching with the low carrier concentration n-layer 4 becomes poor and the luminous efficiency is lowered, which is not desirable, and when the hole concentration is 1 × 10 ¹⁴ / cm ³ or less, the series resistance becomes high. It is not desirable because it becomes too much. Further, if the film thickness is 1 μm or more, the series resistance is increased, which is not desirable, and if the film thickness is 0.2 μm or less, the emission brightness is decreased, which is not desirable.

Further, it is desirable that the high carrier concentration p ⁺ layer 52 has a hole concentration of 1 × 10 ¹⁶ to 2 × 10 ¹⁷ / cm ³ and a film thickness of 0.2 μm. A p ⁺ layer having a hole concentration of 2 × 10 ¹⁷ / cm ³ or more cannot be formed. When it is 1 × 10 ¹⁶ / cm ³ or less, the series resistance becomes high, which is not desirable. Further, if the film thickness is 0.5 μm or more, the series resistance becomes high, which is not desirable, and the film thickness is 0.
If it is less than 1 μm, the hole injection efficiency decreases, which is not desirable.

Second Embodiment In FIG. 8, a light emitting diode 10 has a sapphire substrate 1, and the sapphire substrate 1 has 500 Å AlN.
Buffer layer 2 is formed. On the buffer layer 2, a high carrier concentration n ⁺ layer 3 made of silicon-doped GaN with a film thickness of about 3 μm and an electron concentration of 2 × 10 ¹⁸ / cm ³ is provided in this order.
Non-doped GaN with a film thickness of about 5000Å and electron concentration of 1 × 10 ¹⁶ / cm ³ .
And a low carrier concentration n layer 4 is formed. Further, on the low carrier concentration n layer 4, a film thickness of about 0.5 is formed in order.
μm, Mg concentration 5 × 10 ¹⁹ / cm ³ Mg-doped GaN low impurity concentration i-layer 61, film thickness about 0.2 μm, Mg concentration 2 × 10 ²⁰ / c
A high impurity concentration i ⁺ layer 62 of m ³ is formed.

Then, predetermined regions of the low impurity concentration i layer 61 and the high impurity concentration i ⁺ layer 62 are respectively p-conductivity-type hole concentration by irradiating the predetermined regions with an electron beam in a pulse at a time. A low carrier concentration p layer 501 of 1 × 10 ¹⁶ / cm ³ and a high carrier concentration p ⁺ layer 502 of hole concentration 2 × 10 ¹⁷ / cm ³ are formed.

[0029] Further, from the upper surface of the high impurity concentration i ⁺ layer 62, the high impurity concentration i ⁺ layer 62, low impurity concentration i layer 61,
A hole 15 is formed which penetrates the low carrier concentration n layer 4 and reaches the high carrier concentration n ⁺ layer 3. An electrode 81 made of nickel joined to the high carrier concentration n ⁺ layer 3 through the hole 15 is formed on the high impurity concentration i ⁺ layer 62. Further, on the upper surface of the high carrier concentration p ⁺ layer 502, the electrode 71 formed of nickel for high carrier concentration p ⁺ layer 502 is formed. High carrier concentration n ⁺ layer 3
The electrode 81 is isolated from the high carrier concentration p ⁺ layer 502 and the low carrier concentration p layer 501 by a high impurity concentration i ⁺ layer 62 and a low impurity concentration i layer 61.

Next, a method of manufacturing the light emitting diode 10 having this structure will be described. 9 to 1 showing the manufacturing process
FIG. 5 is a cross-sectional view of only one element on the wafer. Actually, the following manufacturing process is performed on the wafer in which the elements shown in the figure are repeatedly formed. Then, finally, the wafer is cut to form each light emitting element.

The wafer shown in FIG. 9 is manufactured in the same manner as in the first embodiment. Next, as shown in FIG. 10, the SiO ₂ layer 11 is sputtered on the high impurity concentration i ⁺ layer 62.
Was formed to a thickness of 2000Å. Next, a photoresist 12 was applied on the SiO ₂ layer 11. Then, by photolithography, the photoresist in the electrode formation site A corresponding to the hole 15 formed in the high impurity concentration i ⁺ layer 62 to reach the high carrier concentration n ⁺ layer 3 was removed.

Next, as shown in FIG. 11, the SiO ₂ layer 11 not covered with the photoresist 12 was removed with a hydrofluoric acid-based etching solution. Next, as shown in FIG. 12, a high impurity concentration i ⁺ layer 62 in a region not covered by the photoresist 12 and the SiO ₂ layer 11, a low impurity concentration i layer 61 thereunder, and a low carrier concentration n layer 4 are formed. A part of the upper surface of the high carrier concentration n ⁺ layer 3 was dry-etched by supplying a vacuum degree of 0.04 Torr, a high frequency power of 0.44 W / cm ² and BCl ₃ gas at a rate of 10 ml / min, and then dry etching with Ar. In this step, the hole 15 for taking out the electrode for the high carrier concentration n ⁺ layer 3 was formed. Next, as shown in FIG. 13, the SiO ₂ layer 11 remaining on the high impurity concentration i ⁺ layer 62 is formed.
Was removed with hydrofluoric acid.

Next, as shown in FIG. 14, the same electron beam irradiation apparatus as that used in the first embodiment is used only in predetermined regions of the high impurity concentration i ⁺ layer 62 and the low impurity concentration i layer 61. electron beam is irradiated with a high carrier concentration p ⁺ layer 50 of the hole concentration 2 × 10 ¹⁷ / cm ^3, respectively showing the p conductivity type Te
2. Low carrier concentration p layer 50 with hole concentration of 1 × 10 ¹⁶ / cm ³
1 was formed.

The electron beam irradiation conditions are the same as in the first embodiment. At this time, a portion other than the high carrier concentration p ⁺ layer 502 and the low carrier concentration p layer 501, that is, a portion not irradiated with the electron beam, has a high impurity concentration i ^{+ of the} insulator.
The layer 62 and the low impurity concentration i layer 61 remain as they are. Therefore, the high carrier concentration p ⁺ layer 502 and the low carrier concentration p
The layer 501 is a low carrier concentration n layer 4 in the vertical direction.
However, it is electrically isolated from the surroundings in the lateral direction by the high impurity concentration i ⁺ layer 62 and the low impurity concentration i layer 61.

Next, as shown in FIG. 15, a high carrier concentration p ⁺ layer 502, a high impurity concentration i ⁺ layer 62, a high carrier concentration n ⁺ through the upper surface of the high impurity concentration i ⁺ layer 62 and the hole 15. ^A Ni layer 20 was formed on the ⁺ layer 3 by vapor deposition. Then, a photoresist 21 is applied on the Ni layer 20, and the photoresist 21 is applied by photolithography.
Has a high carrier concentration n ⁺ layer 3 and a high carrier concentration p ⁺ layer 5
A pattern was formed in a predetermined shape so that the electrode portion for 02 was left. Next, using the photoresist 21 as a mask, the exposed portion of the lower Ni layer 20 was etched with a nitric acid-based etching solution, and the photoresist 21 was removed with acetone.
In this way, as shown in FIG.
The electrode 81 of the ⁺ layer 3 and the electrode 71 of the high carrier concentration p ⁺ layer 502 were formed. After that, the wafer formed as described above was cut into each element.

The light emission intensity of the light emitting diode 10 thus manufactured was measured and found to be 10 mcd and the light emission life was 10 ⁴ hours, as in the first embodiment.

Third Embodiment A light emitting diode 10 may be constructed as shown in FIG. That is, the film thickness is about 0.
High carrier concentration p ^{+ of} 2 μm, hole concentration 2 × 10 ¹⁷ / cm ³
Layer 52, film thickness about 0.5 μm, hole concentration 1 × 10 ¹⁵ / cm ³ Mg
A low carrier concentration p layer 51 made of doped GaN is formed. Then, on the low carrier concentration p layer 51, in order,
Non-doped GaN with a film thickness of about 5000Å and electron concentration of 1 × 10 ¹⁵ / cm ³ .
Low carrier concentration n layer 4 made of a thickness of about 2.2 [mu] m, the electron concentration 2 × 10 ¹⁸ / cm ³ of silicon-doped high carrier concentration n ⁺ layer 3 made of GaN is formed.

Then, the electrode 72 formed of nickel and connected to the high carrier concentration p ⁺ layer 52 and the high carrier concentration n
An electrode 82 made of nickel and connected to the ⁺ layer 3 is formed. The electrode 82 and the electrode 72 are electrically insulated and separated by the groove 91 formed in the high carrier concentration n ⁺ layer 3, the low carrier concentration n layer 4, and the low carrier concentration p layer 51.

As described above, this embodiment is different from the first embodiment in that the deposition order of the p layer and the n layer on the substrate 1 is reversed. The manufacturing can be performed in the same manner as in the first embodiment.

Fourth Embodiment In the light emitting diode of the first embodiment having the structure shown in FIG. 1, a high carrier concentration n ⁺ layer 3, a low carrier concentration n layer 4,
Low carrier concentration p layer 51, high carrier concentration p ⁺ layer 52
Of Al _0.2 Ga _0.5 In _0.3 N, respectively. The high carrier concentration n ⁺ layer 3 has an electron concentration of 2 × 10 ¹⁸ / c by adding silicon.
formed in m ^3, the low carrier concentration n layer 4 was formed by adding an impurity-free electron concentration 1 × 10 ¹⁶ / cm ^3. Low carrier concentration p layer 5
1 is magnesium (Mg) added and irradiated with an electron beam to form a hole concentration of 1 × 10 ¹⁶ / cm ³ , and the high carrier concentration p ⁺ layer 52 is also added magnesium (Mg) to form an electron beam. Irradiation was performed to form a hole concentration of 2 × 10 ¹⁷ / cm ³ . Then, an electrode 7 made of nickel and connected to the high carrier concentration p ⁺ layer 52 and an electrode 8 made of nickel and connected to the high carrier concentration n ⁺ layer 3 were formed.

Next, the light emitting diode 10 having this structure can be manufactured similarly to the light emitting diode of the first embodiment. Trimethylindium (In (CH ₃ ) ₃ ) was used in addition to TMG, TMA, silane, CP ₂ Mg gas. The generation temperature and gas flow rate are the same as in the first embodiment. The flow rates of the other gases are the same as those in the first embodiment except that trimethylindium is supplied at 1.7 × 10 ⁻⁴ mol / min.

Next, as in the first embodiment, an electron beam irradiation apparatus is used to uniformly irradiate the high carrier concentration p ⁺ layer 52 and the low carrier concentration p layer 51 with an electron beam to p-conduct. Type semiconductor could be obtained.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing a configuration of a light emitting diode according to a first specific example of the present invention.

FIG. 2 is a cross-sectional view showing a manufacturing process of the light emitting diode of the same embodiment.

FIG. 3 is a cross-sectional view showing a manufacturing process of the light emitting diode of the embodiment.

FIG. 4 is a cross-sectional view showing a manufacturing process of the light emitting diode of the same embodiment.

FIG. 5 is a cross-sectional view showing the manufacturing process of the light emitting diode of the same embodiment.

FIG. 6 is a cross-sectional view showing a manufacturing process of the light emitting diode of the embodiment.

FIG. 7 is a sectional view showing a manufacturing process of the light emitting diode of the embodiment.

FIG. 8 is a configuration diagram showing a configuration of a light emitting diode according to a second specific example of the present invention.

FIG. 9 is a sectional view showing a manufacturing process of the light emitting diode of the embodiment.

FIG. 10 is a sectional view showing a manufacturing process of the light emitting diode of the embodiment.

FIG. 11 is a cross-sectional view showing the manufacturing process of the light-emitting diode of the example.

FIG. 12 is a cross-sectional view showing the manufacturing process of the light-emitting diode of the example.

FIG. 13 is a cross-sectional view showing the manufacturing process of the light-emitting diode of the example.

FIG. 14 is a sectional view showing a manufacturing process of the light emitting diode of the embodiment.

FIG. 15 is a sectional view showing a manufacturing process of the light emitting diode of the embodiment.

FIG. 16 is a configuration diagram showing a configuration of a light emitting diode according to a third specific example of the present invention.

FIG. 17 is a measurement diagram in which wavelength characteristics of photoluminescence intensity of Mg-doped GaN and a portion not irradiated with an electron beam are measured.

[Explanation of symbols]

10 ... Light emitting diode 1 ... Sapphire substrate 2 ... Buffer layer 3 ... High carrier concentration n ⁺ layer 4 ... Low carrier concentration n layer 51,501 ... Low carrier concentration p layer 52,502 ... High carrier concentration p ⁺ layer 61 ... Low impurity Concentration i layer 62 ... High impurity concentration i ⁺ layer 7, 8, 71, 72, 81, 82 ... Electrode 9, 91 ... Groove

 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Shiro Yamazaki 1 Ochiai, Nagachiji, Kasuga-cho, Nishikasugai-gun, Aichi Toyota Gosei Co., Ltd. In Toyoda Gosei Co., Ltd. (72) Inventor Katsuhide Masabe 1 Ochiai, Nagachi, Kasuga-cho, Nishikasugai-gun, Aichi Prefecture In Toyoda Gosei Co., Ltd. (72) Inventor Shigeru Kato 47 Umezu Takaune-cho, Ukyo-ku, Kyoto Nissin Electric Co., Ltd. (72) Inventor Takuya Kuwahara 47 Umezu Taka-une-cho, Ukyo-ku, Kyoto Nissin Electric Co., Ltd.

Claims (1)

[Claims] 1. An n-type nitrogen-group 3 element compound semiconductor (Al _x
Ga _Y In _1-XY N; including X = 0, Y = 0, X = Y = 0)),
p-type nitrogen-group III compound semiconductor (Al _x Ga _Y In _1-XY N; X =
0, Y = 0, X = Y = 0 inclusive) and a nitrogen layer having a p-layer of
In the light emitting element of a group element compound semiconductor, the p layer is formed by adding magnesium (Mg) and then irradiating a pulsed electron beam spread in a planar manner on the entire surface of the wafer.