JPH06349314A - Conductive paste - Google Patents
Conductive pasteInfo
- Publication number
- JPH06349314A JPH06349314A JP16044793A JP16044793A JPH06349314A JP H06349314 A JPH06349314 A JP H06349314A JP 16044793 A JP16044793 A JP 16044793A JP 16044793 A JP16044793 A JP 16044793A JP H06349314 A JPH06349314 A JP H06349314A
- Authority
- JP
- Japan
- Prior art keywords
- glass frit
- softening point
- conductive paste
- powder
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- Parts Printed On Printed Circuit Boards (AREA)
- Glass Compositions (AREA)
- Ceramic Capacitors (AREA)
- Conductive Materials (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、導電性ペーストに関
し、詳しくは、積層セラミックコンデンサなどのセラミ
ック電子部品の外部電極を形成するために用いられる導
電性ペーストに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductive paste, and more particularly to a conductive paste used for forming external electrodes of ceramic electronic parts such as laminated ceramic capacitors.
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】積層セ
ラミックコンデンサなどのセラミック電子部品（素体）
に外部電極（端子電極）を形成する場合、従来は、例え
ば、Ａｇ，Ａｇ−Ｐｄなどの導電粉末１００重量部と、
セラミック電子部品（素体）との接着力を得るために配
合されるガラスフリット（例えばホウケイ酸亜鉛系ガラ
スフリット）１〜３０重量部を含有してなる導電性ペー
ストを用い、これをセラミック電子部品（素体）に塗布
した後、焼成することにより、外部電極を形成してい
る。2. Description of the Related Art Ceramic electronic parts (elements) such as monolithic ceramic capacitors
In the case of forming an external electrode (terminal electrode) on, conventionally, for example, 100 parts by weight of conductive powder such as Ag or Ag-Pd,
A conductive paste containing 1 to 30 parts by weight of a glass frit (for example, zinc borosilicate-based glass frit) blended for obtaining an adhesive force with a ceramic electronic component (element body) is used. After being applied to the (element), the external electrodes are formed by firing.
【０００３】そして、このようにして外部電極が形成さ
れる積層セラミックコンデンサなどのセラミック電子部
品には、外部電極の半田濡れ性などの特性を向上させる
ために、ＮｉメッキとＳｎメッキ、あるいはＮｉメッキ
と半田メッキなどの種々のメッキ処理を施すようにした
もの（メッキ品）がある。In order to improve characteristics such as solder wettability of the external electrodes, a ceramic electronic component such as a laminated ceramic capacitor in which the external electrodes are formed in this way is Ni-plated and Sn-plated or Ni-plated. There are products (plated products) that are subjected to various plating treatments such as solder plating.
【０００４】しかし、従来のホウケイ酸亜鉛系ガラスフ
リットを用いた導電性ペーストにおいては、通常、軟化
点が低い（例えば５００〜５５０℃）ホウケイ酸亜鉛系
ガラスフリットが用いられることが多く、セラミック電
子部品（メッキ品）の外部電極を形成した場合、メッキ
工程において構成成分の一部であるガラスフリットがメ
ッキ液に溶解し、外部電極とセラミック電子部品（素
体）との間の接着強度が低下するという問題点がある。However, in a conductive paste using a conventional zinc borosilicate glass frit, a zinc borosilicate glass frit having a low softening point (for example, 500 to 550 ° C.) is usually used, and a ceramic electronic material is often used. When an external electrode of a component (plated product) is formed, glass frit, which is a component of the component, dissolves in the plating solution during the plating process, and the adhesive strength between the external electrode and the ceramic electronic component (element) decreases. There is a problem of doing.
【０００５】また、ガラスフリットの軟化点が低いた
め、外部電極（導電性ペースト）焼成時に外部電極が収
縮して、セラミック電子部品（素体）を締め付ける力が
強くなり、セラミック電子部品のたわみ強度が低下する
という問題点がある。Further, since the softening point of the glass frit is low, the external electrode contracts during firing of the external electrode (conductive paste), and the force for tightening the ceramic electronic component (element body) becomes strong, and the flexural strength of the ceramic electronic component is increased. There is a problem in that
【０００６】さらに、極端な場合には、ガラスフリット
が溶出した部分からメッキ液がセラミックの内部に侵入
し、セラミック電子部品（例えば積層セラミックコンデ
ンサ）のＱ特性を劣化させるというような問題点があ
る。Further, in an extreme case, there is a problem that the plating solution enters the inside of the ceramic from the portion where the glass frit is eluted and deteriorates the Q characteristic of the ceramic electronic component (for example, laminated ceramic capacitor). .
【０００７】この発明は、上記問題点を解決するもので
あり、メッキ液に対する耐性が大きく、特性の劣化を防
止することが可能で、信頼性の高い外部電極を形成する
ことが可能な導電性ペーストに関する。The present invention solves the above-mentioned problems, has a high resistance to a plating solution, can prevent deterioration of characteristics, and can form a highly reliable external electrode. Regarding paste.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、この発明の導電性ペーストは、導電粉末と、ガラス
フリットと、有機ビヒクルとを含有してなるセラミック
電子部品の外部電極形成用の導電性ペーストであって、
前記ガラスフリットは、ＺｎＯ，ＳｉＯ2，Ｂ2Ｏ3，及
びアルカリ土類金属とアルカリ金属の酸化物の少なくと
もいずれか一方を含有するホウケイ酸亜鉛系ガラスフリ
ットからなり、前記ホウケイ酸亜鉛系ガラスフリット
は、（ａ）軟化点が５４０〜５７０℃の低軟化点ガラス
フリット２０〜８０重量％と、（ｂ）軟化点が５７５〜
６２０℃の高軟化点ガラスフリット８０〜２０重量％と
を混合してなる混合ガラスフリットからなることを特徴
とする。In order to achieve the above object, a conductive paste according to the present invention is used for forming an external electrode of a ceramic electronic component containing a conductive powder, a glass frit and an organic vehicle. A conductive paste,
The glass frit is a zinc borosilicate-based glass frit containing at least one of ZnO, SiO 2 , B 2 O 3 , and an oxide of an alkaline earth metal and an alkali metal. Is (a) 20-80% by weight of a low-softening point glass frit having a softening point of 540 to 570 ° C., and (b) a softening point of 575-75%.
It is characterized by comprising a mixed glass frit which is obtained by mixing 80 to 20% by weight of a glass frit having a high softening point of 620 ° C.
【０００９】なお、この発明の導電性ペーストにおい
て、低軟化点ガラスフリットと高軟化点ガラスフリット
との割合を上記割合に限定したのは、高軟化点ガラスフ
リットの割合が２０重量％未満の場合には、外部電極の
引張り強度及び外部電極が形成されたセラミック電子部
品のたわみ強度が不十分になり、また、高軟化点ガラス
フリットの割合が８０重量％を越えると、耐熱衝撃性が
低下するからである。In the conductive paste of the present invention, the ratio of the low-softening point glass frit and the high-softening point glass frit is limited to the above ratio when the high-softening point glass frit is less than 20% by weight. In addition, the tensile strength of the external electrode and the flexural strength of the ceramic electronic component on which the external electrode is formed become insufficient, and if the proportion of the high softening point glass frit exceeds 80% by weight, the thermal shock resistance decreases. Because.
【００１０】また、この発明の導電性ペーストにおい
て、混合ガラスフリットは、導電粉末と混合ガラスフリ
ットの合計量（固形分）に対して３〜１０重量％の範囲
で添加することが望ましい。これは、ガラスフリットの
添加量が導電粉末とガラスフリットの合計量の３重量％
未満になると電極とセラミックとの接着強度が低下し、
また、１０重量％を越えるとメッキ付着性が低下するた
めである。Further, in the conductive paste of the present invention, the mixed glass frit is preferably added in the range of 3 to 10% by weight based on the total amount (solid content) of the conductive powder and the mixed glass frit. This is because the amount of glass frit added is 3% by weight of the total amount of conductive powder and glass frit.
If it is less than the following, the adhesive strength between the electrode and the ceramic decreases
Also, if it exceeds 10% by weight, the adhesion of the plating is reduced.
【００１１】また、この発明の導電性ペーストにおいて
は、セラミック電子部品（素体）との熱膨張係数を調整
するために、５重量％程度までの割合で混合ガラスフリ
ットにアルミナ（Ａｌ2Ｏ3）を添加してもよい。Further, in the conductive paste of the present invention, in order to adjust the coefficient of thermal expansion with the ceramic electronic component (element body), alumina (Al 2 O 3) is added to the mixed glass frit at a ratio of up to about 5% by weight. ) May be added.
【００１２】[0012]
【実施例】以下、この発明の実施例を比較例とともに示
して、その特徴とするところをさらに詳しく説明する。EXAMPLES Hereinafter, examples of the present invention will be shown together with comparative examples, and the features thereof will be described in more detail.
【００１３】この実施例においては、表１に示すような
組成の低軟化点ガラスフリット（フリット番号Ｉ〜II
I）と高軟化点ガラスフリット（フリット番号IV，Ｖ）
を、表２に示すような割合で混合することにより調製し
た混合ガラスフリットを用いた。In this example, a low softening point glass frit (frit numbers I to II) having the composition shown in Table 1 was used.
I) and glass frit with high softening point (frit numbers IV and V)
The mixed glass frit prepared by mixing the above was mixed at a ratio shown in Table 2.
【００１４】[0014]
【表１】 [Table 1]
【００１５】[0015]
【表２】 [Table 2]
【００１６】また、この実施例においては、導電粉末と
してＡｇ粉末を用い、有機ビヒクルとしてセルロース系
樹脂をブチルカルビトールに溶解したものを用いた。Further, in this example, Ag powder was used as the conductive powder, and a cellulose resin dissolved in butyl carbitol was used as the organic vehicle.
【００１７】そして、Ａｇ粉末（導電粉末）と、上記混
合ガラスフリットと、有機ビヒクルとを配合して混練す
ることにより導電性ペーストを調製した。Then, a conductive paste was prepared by mixing and kneading Ag powder (conductive powder), the above-mentioned mixed glass frit and an organic vehicle.
【００１８】なお、この実施例においては、導電性ペー
スト中のＡｇ粉末と混合ガラスフリットの合計量（固形
分）を８０重量％とし、Ａｇ粉末とガラスフリットの合
計量に対するガラスフリットの割合を６重量％とした。In this example, the total amount (solid content) of Ag powder and mixed glass frit in the conductive paste was 80% by weight, and the ratio of glass frit to the total amount of Ag powder and glass frit was 6%. It was set to% by weight.
【００１９】上記の導電性ペーストを用いて、積層セラ
ミックコンデンサの外部電極（端子電極）を形成した
後、８００℃，１０分間ピークの条件で焼成した。それ
から、外部電極上にＮｉの電解メッキとＳｎの電解メッ
キを重ねて施した。After forming the external electrodes (terminal electrodes) of the monolithic ceramic capacitor using the above-mentioned conductive paste, it was fired at 800 ° C. for 10 minutes under peak conditions. Then, Ni electrolytic plating and Sn electrolytic plating were overlaid on the external electrodes.
【００２０】そして、得られた積層セラミックコンデン
サについて、そのたわみ強度及び外部電極の引張り強度
を測定するとともに、熱衝撃試験を行い、その特性を評
価した。その結果を表２に示す。The flexural strength and the tensile strength of the external electrode of the obtained monolithic ceramic capacitor were measured, and a thermal shock test was conducted to evaluate the characteristics. The results are shown in Table 2.
【００２１】なお、表２において、試料番号に*印を付
したものはこの発明の範囲外のもの（比較例）であり、
その他はこの発明の範囲内の実施例である。In Table 2, the sample numbers marked with * are outside the scope of the present invention (comparative examples).
Others are embodiments within the scope of the present invention.
【００２２】熱衝撃試験は、温度差（ΔＴ）３００℃の
熱衝撃を与えた後の不良品の発生率を示す。The thermal shock test shows the rate of occurrence of defective products after thermal shock with a temperature difference (ΔT) of 300 ° C.
【００２３】また、引張り強度及びたわみ強度は、その
値が大きいほど特性が良いことを示す。Further, the larger the tensile strength and the flexural strength, the better the characteristics.
【００２４】表２より、この発明の実施例の導電性ペー
ストを用いて外部電極を形成した積層セラミックコンデ
ンサを、試料番号１の比較例の積層セラミックコンデン
サ（高軟化点ガラスフリットを含まないガラスフリット
を用いた導電性ペーストを使用して外部電極を形成した
積層セラミックコンデンサ）と比較すると、引張り強度
及びたわみ強度のいずれもが向上していることがわか
る。From Table 2, the laminated ceramic capacitor having the external electrodes formed by using the conductive paste of the embodiment of the present invention was compared with the laminated ceramic capacitor of the comparative example of Sample No. 1 (glass frit containing no high softening point glass frit). It can be seen that both the tensile strength and the flexural strength are improved as compared with a monolithic ceramic capacitor in which an external electrode is formed by using a conductive paste using (1).
【００２５】また、この発明の実施例の導電性ペースト
を用いて外部電極を形成した積層セラミックコンデンサ
を、試料番号５及び１２の比較例の積層セラミックコン
デンサ（高軟化点ガラスフリットのみを含むガラスフリ
ットを用いた導電性ペーストを使用して外部電極を形成
した積層セラミックコンデンサ）と比較すると、引張り
強度及びたわみ強度に顕著な差は認められないが、比較
例（試料番号５及び１２）については、熱衝撃試験にお
いて不良品が発生しており、実施例の導電性ペーストを
用いて外部電極を形成したセラミック電子部品の耐熱衝
撃性が向上していることがわかる。Further, the laminated ceramic capacitors having external electrodes formed by using the conductive paste of the embodiment of the present invention were replaced with the laminated ceramic capacitors of the comparative examples of sample numbers 5 and 12 (glass frit containing only the high softening point glass frit). No significant difference in tensile strength and flexural strength is observed when compared with a laminated ceramic capacitor in which an external electrode is formed by using a conductive paste using (1), but in Comparative Examples (Sample Nos. 5 and 12), It can be seen that defective products are generated in the thermal shock test, and that the thermal shock resistance of the ceramic electronic component in which the external electrode is formed by using the conductive paste of the example is improved.
【００２６】なお、上記実施例では、混合ガラスフリッ
トとして、表１に示すような低軟化点ガラスフリット及
び高軟化点ガラスフリットを、表２に示すような所定の
割合で混合したガラスフリットを用いた場合について説
明したが、混合ガラスフリットを構成する低軟化点ガラ
スフリット及び高軟化点ガラスフリットの組成、及び低
軟化点ガラスフリット及び高軟化点ガラスフリットの混
合割合は、上記実施例に限定されるものではなく、この
発明の要旨の範囲内において、任意に変化させることが
可能である。In the above-mentioned embodiment, as the mixed glass frit, a glass frit having a low softening point glass frit and a high softening point glass frit as shown in Table 1 mixed at a predetermined ratio as shown in Table 2 is used. Although the case was described, the composition of the low-softening point glass frit and the high-softening point glass frit that constitute the mixed glass frit, and the mixing ratio of the low-softening point glass frit and the high-softening point glass frit are limited to the above examples. However, it can be arbitrarily changed within the scope of the present invention.
【００２７】また、上記実施例では、アルカリ土類金属
の酸化物としてＣａＯを用い、アルカリ金属の酸化物と
してＬｉ2Ｏを用いた場合について説明したが、この発
明の導電性ペーストにおいては、これらに限らず、他の
アルカリ土類金属の酸化物及びアルカリ金属の酸化物を
用いることが可能である。In the above embodiment, the case where CaO is used as the oxide of the alkaline earth metal and Li 2 O is used as the oxide of the alkali metal has been described. However, it is possible to use other alkaline earth metal oxides and alkali metal oxides.
【００２８】また、上記実施例では、導電粉末としてＡ
ｇ粉末を用いた場合について説明したが、この発明の導
電性ペーストにおいては、導電粉末はＡｇ粉末に限られ
るものではなく、例えばＣｕ粉末などの他の金属粉末、
あるいはＡｇ−Ｐｄ粉末のような合金粉末などを導電粉
末として用いることが可能である。In the above embodiment, the conductive powder A
Although the case of using g powder has been described, in the conductive paste of the present invention, the conductive powder is not limited to Ag powder, and other metal powder such as Cu powder,
Alternatively, an alloy powder such as Ag-Pd powder can be used as the conductive powder.
【００２９】さらに、上記実施例では、この発明の導電
性ペーストを用いて積層セラミックコンデンサの外部電
極を形成した場合について説明したが、この発明の導電
性ペーストは、積層セラミックコンデンサの外部電極の
みではなく、セラミック半導体デバイスや正特性サーミ
スタ装置などの種々のセラミック電子部品の外部電極を
形成する場合に使用することが可能である。Further, in the above embodiment, the case where the conductive paste of the present invention is used to form the external electrodes of the laminated ceramic capacitor has been described. However, the conductive paste of the present invention is not limited to the external electrodes of the laminated ceramic capacitor. However, it can be used for forming external electrodes of various ceramic electronic components such as ceramic semiconductor devices and positive temperature coefficient thermistor devices.
【００３０】この発明は、さらにその他の点においても
上記実施例に限定されるものではなく、有機ビヒクルの
種類、あるいは各構成成分（導電粉末、混合ガラスフリ
ット及び有機ビヒクル）の配合割合などに関して、発明
の要旨の範囲内において、種々の応用、変形を加えるこ
とが可能である。The present invention is not limited to the above-mentioned embodiments in other points as well. Regarding the kind of organic vehicle or the compounding ratio of each constituent (conductive powder, mixed glass frit and organic vehicle), etc. Various applications and modifications can be made within the scope of the invention.
【００３１】[0031]
【発明の効果】上述のように、この発明の導電性ペース
トは、ガラスフリットとして、ＺｎＯ，ＳｉＯ2，Ｂ2Ｏ
3，及びアルカリ土類金属とアルカリ金属の酸化物の少
なくともいずれか一方を含有してなるホウケイ酸亜鉛系
ガラスフリットを用い、そして、このフリットには、
（ａ）軟化点が５４０〜５７０℃の低軟化点ガラスフリ
ット２０〜８０重量％と、（ｂ）軟化点が５７５〜６２
０℃の高軟化点ガラスフリット８０〜２０重量％とを混
合した混合ガラスフリットを用いるようにしているの
で、メッキ工程における外部電極のメッキ液への溶解を
防止し、外部電極及び外部電極を形成したセラミック電
子部品の特性の劣化を防止することが可能になる。As described above, the conductive paste of the present invention is used as a glass frit for ZnO, SiO 2 , B 2 O.
3 , and a zinc borosilicate-based glass frit containing at least one of an alkaline earth metal and an oxide of an alkali metal, and this frit includes:
(A) 20 to 80% by weight of a low softening point glass frit having a softening point of 540 to 570 ° C., and (b) a softening point of 575 to 62
Since the mixed glass frit mixed with 80 ° C. to 20% by weight of the high softening point glass frit at 0 ° C. is used, the external electrode is prevented from being dissolved in the plating solution in the plating process to form the external electrode and the external electrode. It is possible to prevent the deterioration of the characteristics of the ceramic electronic component.
【００３２】また、軟化点が高いガラスフリットを混合
することにより、外部電極（導電性ペースト）焼成時の
電極の収縮によるセラミック電子部品（素体）の締め付
けが緩和され、たわみ強度を向上させることが可能にな
る。Further, by mixing the glass frit having a high softening point, the tightening of the ceramic electronic component (element body) due to the contraction of the electrode during firing of the external electrode (conductive paste) is relaxed, and the flexural strength is improved. Will be possible.
【００３３】さらに、軟化点の低いガラスフリットを含
むため、セラミック電子部品（素体）と外部電極の界面
に、熱衝撃に対する緩衝機能を果す反応相が残存し、従
来のセラミック電子部品に劣らない高温での耐熱衝撃性
を確保することができる。Furthermore, since the glass frit having a low softening point is included, a reaction phase that functions as a buffer against thermal shock remains at the interface between the ceramic electronic component (element body) and the external electrode, which is not inferior to conventional ceramic electronic components. It is possible to secure thermal shock resistance at high temperatures.
Claims (1)
ヒクルとを含有してなるセラミック電子部品の外部電極
形成用の導電性ペーストであって、 前記ガラスフリットは、ＺｎＯ，ＳｉＯ2，Ｂ2Ｏ3，及
びアルカリ土類金属とアルカリ金属の酸化物の少なくと
もいずれか一方を含有するホウケイ酸亜鉛系ガラスフリ
ットからなり、前記ホウケイ酸亜鉛系ガラスフリット
は、 （ａ）軟化点が５４０〜５７０℃の低軟化点ガラスフリ
ット２０〜８０重量％と、 （ｂ）軟化点が５７５〜６２０℃の高軟化点ガラスフリ
ット８０〜２０重量％とを混合してなる混合ガラスフリ
ットからなることを特徴とする導電性ペースト。1. A conductive paste for forming an external electrode of a ceramic electronic component, comprising a conductive powder, a glass frit, and an organic vehicle, wherein the glass frit is ZnO, SiO 2 , B 2 O. 3 , and a zinc borosilicate-based glass frit containing at least one of an alkaline earth metal and an oxide of an alkali metal, wherein the zinc borosilicate-based glass frit has (a) a softening point of 540 to 570 ° C. A conductive material comprising a mixed glass frit having a low softening point glass frit of 20 to 80% by weight and (b) a high softening point glass frit of 80 to 20% by weight having a softening point of 575 to 620 ° C. Sex paste.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16044793A JPH06349314A (en) | 1993-06-03 | 1993-06-03 | Conductive paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16044793A JPH06349314A (en) | 1993-06-03 | 1993-06-03 | Conductive paste |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06349314A true JPH06349314A (en) | 1994-12-22 |
Family
ID=15715132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16044793A Withdrawn JPH06349314A (en) | 1993-06-03 | 1993-06-03 | Conductive paste |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06349314A (en) |
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| WO2001033588A1 (en) * | 1999-11-02 | 2001-05-10 | Tdk Corporation | Multilayer capacitor |
| WO2001069991A1 (en) * | 2000-03-15 | 2001-09-20 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing multilayer ceramic substrate, and conductor paste |
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-
1993
- 1993-06-03 JP JP16044793A patent/JPH06349314A/en not_active Withdrawn
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|---|---|---|---|---|
| US6493207B2 (en) | 1999-11-02 | 2002-12-10 | Tdk Corporation | Multilayer ceramic capacitor |
| WO2001033588A1 (en) * | 1999-11-02 | 2001-05-10 | Tdk Corporation | Multilayer capacitor |
| WO2001069991A1 (en) * | 2000-03-15 | 2001-09-20 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing multilayer ceramic substrate, and conductor paste |
| US6846375B2 (en) | 2000-03-15 | 2005-01-25 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing multilayer ceramic wiring board and conductive paste for use |
| JP2002280248A (en) * | 2001-03-21 | 2002-09-27 | Sumitomo Metal Mining Co Ltd | Copper paste composition for external electrode, and stacked ceramic capacitor using the same |
| JP4670164B2 (en) * | 2001-03-21 | 2011-04-13 | 住友金属鉱山株式会社 | Copper paste composition for external electrodes and multilayer ceramic capacitor using the same |
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| JP2004362862A (en) * | 2003-06-03 | 2004-12-24 | Kyoto Elex Kk | Conductive paste composition for thick-film conductor |
| US7804677B2 (en) | 2004-04-23 | 2010-09-28 | Murata Manufacturing Co., Ltd. | Electronic component and method for producing the same |
| US7558047B2 (en) | 2004-04-23 | 2009-07-07 | Murata Manufacturing Co., Ltd. | Electronic component and method for producing the same |
| KR100812077B1 (en) * | 2004-04-23 | 2008-03-07 | 가부시키가이샤 무라타 세이사쿠쇼 | Electronic component and manufacturing method thereof |
| WO2005104148A1 (en) * | 2004-04-23 | 2005-11-03 | Murata Manufacturing Co., Ltd. | Electronic component and manufacturing method thereof |
| EP1784367A2 (en) * | 2004-06-09 | 2007-05-16 | Ferro Corporation | Lead-free and cadmium-free conductive copper thick film pastes |
| EP1784367A4 (en) * | 2004-06-09 | 2011-05-25 | Ferro Corp | Lead-free and cadmium-free conductive copper thick film pastes |
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| JP2008218022A (en) * | 2007-02-28 | 2008-09-18 | Mitsuboshi Belting Ltd | Copper conductive paste, conductor circuit board, and electronic part |
| JP2010248034A (en) * | 2009-04-16 | 2010-11-04 | Nippon Electric Glass Co Ltd | Glass composition for forming electrode and electrode forming material |
| JP2011175750A (en) * | 2010-02-23 | 2011-09-08 | Murata Mfg Co Ltd | Conductive paste, and electronic component |
| JP2011204759A (en) * | 2010-03-24 | 2011-10-13 | Mitsubishi Materials Corp | Conductive composition and method of manufacturing solar cell using the same, and solar cell |
| JP2011204760A (en) * | 2010-03-24 | 2011-10-13 | Mitsubishi Materials Corp | Conductive composition and method of manufacturing solar cell using the same, and solar cell |
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| US9230709B2 (en) * | 2010-12-31 | 2016-01-05 | Lg Innotek Co., Ltd. | Paste composition for electrode of solar cell and solar cell including the same |
| WO2012111478A1 (en) * | 2011-02-18 | 2012-08-23 | 株式会社 村田製作所 | Conductive paste and solar cell |
| WO2015194290A1 (en) * | 2014-06-19 | 2015-12-23 | 株式会社村田製作所 | Conductive paste and glass article |
| JPWO2015194290A1 (en) * | 2014-06-19 | 2017-04-20 | 株式会社村田製作所 | Conductive paste and glass article |
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| US10861985B2 (en) | 2016-04-13 | 2020-12-08 | Dupont Electronics, Inc. | Conductive paste composition and semiconductor devices made therewith |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20000905 |