JPH06342925A - Manufacture of amorphous silicon solar cell - Google Patents

Abstract

PURPOSE:To obtain the stable manufacturing technique of an a-Si solar cell by forming the film of an amorphous silicon layer, forming the film of an intermediate layer consisting of a sublimating conductive substance in specified thickness and shaping a metallic electrode through evaporation. CONSTITUTION:An a-Si layer 3 is formed onto a transparent insulating substrate such as a glass plate 1 having thickness of 1mm through a transparent electrode 2 consisting of a transparent conductive film having thickness of 20-200nm by the glow discharge decomposition of silane. The a-Si layer 3 has thickness of 1mum, the film 4 of ITO, SnO2, etc., having thickness of 20-l00nm is shaped onto the whole surface of the layer 3 as a sublimating conductive substance through evaporation, and the upper section of the film 4 is coated with a metallic electrode 5 formed through an evaporation method and composed of Al/Ti. The metallic electrode 5 is 1-2mum thick. Accordingly, since a splash, a bumping, etc., are reduced at the time of evaporation in the sublimating conductive substance, the a-Si layer 3 gets no trouble, and the sublimating conductive substance fills the role of protection against metallic particles colliding by the bumping, etc.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an a-Si having a surface covered with a metal electrode for taking out the photoelectromotive force generated in an amorphous silicon (hereinafter referred to as a-Si) layer.
The present invention relates to a method for manufacturing a solar cell.

[0002]

2. Description of the Related Art As an electrode of an a-Si solar cell, a transparent electrode made of a transparent conductive film is generally provided on the entire light incident side, and a metal electrode is generally provided on the opposite electrode. Is. As this type of metal electrode, an aluminum electrode or a laminated electrode of aluminum and titanium is known.

[0003]

However, when these electrodes are formed by vapor deposition of Al or Ti, metal particles may collide with the a-Si layer and damage the a-Si layer due to splash or bumping of the metal. Often,
This has been a cause of lowering the manufacturing yield of solar cells.

It is an object of the present invention to provide a method for manufacturing an a-Si solar cell, which can eliminate the above-mentioned drawbacks and can be manufactured by a more stable manufacturing technique.

[0005]

In order to achieve the above object, the present invention provides an amorphous silicon layer on a transparent insulating substrate via a transparent conductive film, and a metal electrode is provided so as to entirely cover the layer. In the method for manufacturing a solar cell which is formed to generate electric power by incident light from the substrate side, after forming the amorphous silicon layer, an intermediate layer made of a sublimable conductive material is formed to a thickness of 20 to 100 nm, After that, it is effective to form a metal electrode by vapor deposition.

[0006]

According to the present invention, an intermediate layer made of a sublimable conductive material is interposed between a metal electrode formed by vapor deposition of an a-Si solar cell and an a-Si layer.
The action of the metal particles on the layer is buffered to achieve the above-mentioned object. ITO (indium, tin oxide) SnO ₂ is used as the sublimable conductive material.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an embodiment of the present invention.
The Si layer 3 is formed by, for example, glow discharge decomposition of silane on a transparent insulating substrate, for example, a glass plate 1 having a thickness of 1 mm, via a transparent electrode 2 made of a transparent conductive film having a thickness of 20 to 200 nm, for example. ing. The a-Si layer 3 is, for example, 1
ITO and SnO having a thickness of μm and having a thickness of 20 to 100 nm as a sublimable conductive material on the entire surface by vapor deposition.
A film 4 such as ₂ is formed, and an Al or Al / Ti metal electrode 5 is formed on the film 4 by a vapor deposition method as in the conventional case.
Is covered. The thickness of the metal electrode is, for example, 1 to 2 μm.

[0008]

According to the present invention, in the method for manufacturing an a-Si solar cell, a-
A sublimable conductive material is deposited on the Si layer as a buffer material.
Since the sublimable conductive material does not cause a splash or bumping during vapor deposition, it does not hinder the a-Si layer. When a metal electrode is deposited on the a-Si layer, a- It serves to protect the Si layer. Therefore, the defect rate due to damage to the a-Si layer is reduced, and
-A stable manufacturing technique of a Si solar cell can be obtained.

[Brief description of drawings]

FIG. 1 is a sectional view of an embodiment of the present invention.

[Explanation of symbols]

 1 glass plate 2 transparent electrode 3 a-Si layer 4 sublimable conductive material layer 5 metal electrode

Front page continuation (72) Inventor Yoshihisa Muramatsu 1-1, Tanabe Nitta, Kawasaki-ku, Kawasaki-shi, Kanagawa Fuji Electric Co., Ltd.

Claims (1)

[Claims] 1. A solar system in which an amorphous silicon layer is provided on a transparent insulating substrate via a transparent conductive film, a metal electrode is formed so as to cover the entire layer, and power is generated by incident light from the substrate side. In the method for manufacturing a battery, after forming the amorphous silicon layer, an intermediate layer made of a sublimable conductive material is formed to a thickness of 20 to 100 nm, and then a metal electrode is formed by vapor deposition. Battery manufacturing method.