JPS59198774A - Amorphous silicon solar battery - Google Patents
Amorphous silicon solar batteryInfo
- Publication number
- JPS59198774A JPS59198774A JP58073183A JP7318383A JPS59198774A JP S59198774 A JPS59198774 A JP S59198774A JP 58073183 A JP58073183 A JP 58073183A JP 7318383 A JP7318383 A JP 7318383A JP S59198774 A JPS59198774 A JP S59198774A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- film
- substance
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000354 decomposition reaction Methods 0.000 abstract description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 2
- 229910000077 silane Inorganic materials 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 4
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000013528 metallic particle Substances 0.000 abstract 1
- 238000000859 sublimation Methods 0.000 abstract 1
- 230000008022 sublimation Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010936 titanium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明はアモルファスシリコン（以下ａ −８ｉと記す
）層に発生した光起電力の取出しのために表面を覆って
金属電極が設けられるａ −８ｉ太陽電池に関する。Detailed Description of the Invention [Technical Field to which the Invention Pertains] The present invention relates to an amorphous silicon (hereinafter referred to as a-8i) layer in which a metal electrode is provided covering the surface to take out photovoltaic force generated in the layer. 8i solar cell.
ａ−８４太陽電池の電極としては光の入射側には透明導
電膜からなる透明電極が全面に設けられるが、それに対
向する電極には金属電極が全面に設けられるのが一般的
である。この穏の金属電極としてはアルミニウム電極あ
るいはアルミニウムとチタンの積層電極が知られている
。しかしこれらの電極をＡＩあるいはＴｉの蒸着により
形成する場合、金属のスプラッシュあるいは突沸により
金属粒子が衝突しａ−８ｉ層に損傷を与えることがしば
しばあり、太陽電池の製造歩留りを低下さぜる原因とな
っていた。As for the electrodes of the A-84 solar cell, a transparent electrode made of a transparent conductive film is provided on the entire surface of the light incident side, and a metal electrode is generally provided on the entire surface of the opposite electrode. As this moderate metal electrode, an aluminum electrode or a laminated electrode of aluminum and titanium is known. However, when these electrodes are formed by vapor deposition of AI or Ti, metal particles often collide with each other due to metal splash or bumping, damaging the A-8I layer, which causes a decrease in the manufacturing yield of solar cells. It became.
本発明は、上述の欠点を除去してより安定した製造技術
により製作できるａ −８ｉ太陽電池を提供することを
目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide an a-8i solar cell that can be manufactured using a more stable manufacturing technique by eliminating the above-mentioned drawbacks.
本発明はａ−８ｉ太陽電池の金属電極とａ −８ｉ層と
の間に昇華性導電物質よりなる中間層が介在することに
よって金属電極蒸着時のａ −８ｉ層に対する金属粒子
の作用を緩衝して上述の目的を達成する。昇華性導電物
質としてはＩＴＯ（インジ千つム、すず酸化物）、５ｎ
０２が用いられる。The present invention buffers the effect of metal particles on the a-8i layer during metal electrode deposition by interposing an intermediate layer made of a sublimable conductive material between the metal electrode of the a-8i solar cell and the a-8i layer. to achieve the above objectives. As the sublimable conductive material, ITO (indium tin oxide), 5n
02 is used.
第１図は本発明の一実施例を示すもので、ａ −８ｉ層
３は、例えばシランのグロー放′岨分解ζこより透明絶
縁基板、例えば１ｍの厚さのガラス板１の上に例えば２
０〜２００ｎｍの厚さの透明導電膜からなる透明電極２
を介して成膜されている。ａ−８ｉ層３は例えば１μｍ
の厚さを有し、その上に全面に蒸着ζこより昇華性導電
物質、例えば２０〜１１００ｎの厚さのＩ Ｔｏ 、５
ｎ０２などの膜４が形成され、その上を従来と同様に蒸
着法により成膜されたＡ１あるいはＡｌ／Ｔｉの金属電
極５が覆っている。FIG. 1 shows an embodiment of the present invention, in which an a-8i layer 3 is formed by, for example, silane glow-radiation decomposition
Transparent electrode 2 made of a transparent conductive film with a thickness of 0 to 200 nm
The film is formed through the process. The a-8i layer 3 has a thickness of 1 μm, for example.
, and a sublimable conductive material ζ is deposited on the entire surface, for example, I To with a thickness of 20 to 1100 nm, 5
A film 4 such as n02 is formed, and is covered with a metal electrode 5 of A1 or Al/Ti formed by vapor deposition in the same manner as in the prior art.
金属電極の厚さは、例えば１〜２μｍである。The thickness of the metal electrode is, for example, 1 to 2 μm.
本発明によれば、ａ−８ｉ太陽電池の電極構造において
、金属電極とａ−８ｉ層の間に緩衝材として昇華性導電
物質を挿入する。昇華性導電物質は蒸着時にスズラッシ
ュ、突沸等が少ないのでａ −８ｉ層に障害を与えるこ
とがなく、その上に金属電極を蒸着する際にスプラッシ
ュ、突沸等により衝突する金属粒子に対してａ−８ｉ層
を保護する役目をする。従ってａ−８ｉ層の損傷による
不良率は低下し、ａ−８ｉ太陽電池の安定した製造技術
が得られる０According to the present invention, in the electrode structure of the A-8I solar cell, a sublimable conductive material is inserted as a buffer between the metal electrode and the A-8I layer. The sublimable conductive material does not cause any damage to the a-8i layer because it causes less tin lash, bumping, etc. during vapor deposition, and it does not cause any damage to the a-8i layer. - It serves to protect the 8i layer. Therefore, the defect rate due to damage to the a-8i layer is reduced, and a stable manufacturing technology for a-8i solar cells can be obtained.
第１図は本発明の一実施例の断面図である。 FIG. 1 is a sectional view of an embodiment of the present invention.
Claims (1)
設けられるものにおいて、金属電極とアモルファスシリ
コン層との間に昇華性導電物質よりなる中間層が介在す
ることを特徴とするアモルファスシリコン太陽電池。1) An amorphous silicon solar cell in which a metal electrode is provided covering the surface of an amorphous silicon layer, characterized in that an intermediate layer made of a sublimable conductive material is interposed between the metal electrode and the amorphous silicon layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58073183A JPS59198774A (en) | 1983-04-26 | 1983-04-26 | Amorphous silicon solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58073183A JPS59198774A (en) | 1983-04-26 | 1983-04-26 | Amorphous silicon solar battery |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5236080A Division JP2746074B2 (en) | 1993-09-22 | 1993-09-22 | Manufacturing method of amorphous silicon solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59198774A true JPS59198774A (en) | 1984-11-10 |
| JPS649744B2 JPS649744B2 (en) | 1989-02-20 |
Family
ID=13510763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58073183A Granted JPS59198774A (en) | 1983-04-26 | 1983-04-26 | Amorphous silicon solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59198774A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0272564U (en) * | 1988-11-24 | 1990-06-01 | ||
| EP0641028A2 (en) * | 1993-08-26 | 1995-03-01 | Matsushita Electric Industrial Co., Ltd. | A thin film device and a method for fabricating the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5685875A (en) * | 1979-12-14 | 1981-07-13 | Fuji Electric Co Ltd | Solar battery |
-
1983
- 1983-04-26 JP JP58073183A patent/JPS59198774A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5685875A (en) * | 1979-12-14 | 1981-07-13 | Fuji Electric Co Ltd | Solar battery |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0272564U (en) * | 1988-11-24 | 1990-06-01 | ||
| EP0641028A2 (en) * | 1993-08-26 | 1995-03-01 | Matsushita Electric Industrial Co., Ltd. | A thin film device and a method for fabricating the same |
| EP0641028A3 (en) * | 1993-08-26 | 1995-09-27 | Matsushita Electric Ind Co Ltd | A thin film device and a method for fabricating the same. |
| US5660971A (en) * | 1993-08-26 | 1997-08-26 | Matsushita Electric Industrial Co., Ltd. | Thin film device and a method for fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS649744B2 (en) | 1989-02-20 |
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