JPH06340985A - Plasma treating method and device - Google Patents

Abstract

PURPOSE:To uniformly treat a substrate at a high rate by resonating a microwave in the atmosphere to increase its amplitude and introducing the microwave into a vacuum-sealed treating chamber through a slit to produce stable and high-density plasma. CONSTITUTION:A microwave generated by a magnetron 3 is supplied to the circular cavity resonator 1 of E01 mode through a waveguide 2. The microwave with the amplitude increased in the resonator is radiated into a plasma treating chamber 6 vacuum-sealed with a ceramic sheet 4 through a slit sheet 5 formed in the direction crossing the surface current generated thereby almost at right angles. A wafer 12 is placed on an electrode 7 connected to a high-frequency power source 11 in the chamber 6, gas is introduced from a feed pipe 9, and the chamber is evacuated from an exhaust pipe 10. Consequently, high-density plasma is stably produced in the chamber 6, the energy of incident ion is uniformized, and the wafer 12 is efficiently and uniformly treated.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the manufacture of semiconductor devices using low temperature plasma, and more particularly to a plasma processing apparatus suitable for high speed and uniform processing of various techniques such as CVD, etching, sputtering and ashing.

[0002]

2. Description of the Related Art The apparatus using low temperature plasma is roughly classified into 10KHz to 30M on one of parallel plate electrodes in vacuum.
Using a technique of generating a plasma by applying a high frequency voltage of about Hz (Semiconductor Research 18; P121 to P17
0, Semiconductor Research 19; P225-P267) and 2.4.
There is one using a technique of introducing a 5 GHz microwave into a vacuum chamber to generate plasma. Conventionally, the technique using parallel plate electrodes has been mainly used among them.

On the other hand, with the miniaturization of semiconductor devices, it has become a problem that the device characteristics are affected by the impact of ions generated during plasma processing. Further, it is required to increase the processing speed in order to improve the processing capacity.

In order to increase the processing speed, it is not enough to simply increase the density of plasma or the concentration of radicals (active particles immediately before ionization). Ion energy plays an important role in dry etching by plasma treatment and plasma CVD. In the case of dry etching, if the ion energy is too large, the underlying film is scraped or the crystal structure is affected, and the device characteristics deteriorate. On the other hand, if it is too small, the polymer formed on the etched surface is not sufficiently removed, and the etching rate decreases. Alternatively, on the contrary, a protective film made of a polymer is not formed, the side surface of the pattern is etched, and the dimensional accuracy of the pattern deteriorates.

Even in plasma CVD, if the energy of ions is weak, the film composition becomes rough, and if the energy is strong, the film composition becomes dense.

Therefore, increasing the density of the plasma and properly controlling the ion energy are essential for future plasma processing. As a known example, JP-A-56-1348
No. 0, JP-A-56-96841 proposes a method using microwaves.

When plasma is generated by microwaves, even if the microwaves generated by the magnetron are radiated to the plasma generation chamber whose pressure is low, the electric field strength of the microwaves is not sufficient, so sufficient energy is not supplied to the electrons. It is difficult to generate plasma. Therefore, in order to generate plasma by microwaves, the cyclotron frequency at which electrons rotate in a plane perpendicular to the magnetic field matches the microwave frequency to bring them into a resonance state to supply energy to the electrons and the microwave cavity. There are two methods of irradiating the resonator to increase the amplitude of the microwave and increase the electric field strength to supply energy to the electrons. The former is disclosed in Japanese Unexamined Patent Publication No. 56-13480, and has a magnetic field microwave or ECR (Electron Cyclotron).
Resonance) method. The latter is JP-A-56-9
This is disclosed in Japanese Patent No. 6841.

Since the plasma generated by the microwaves directly supplies energy to the electrons from the microwaves,
The voltage between the sheaths formed between the plasma and the substrate hardly changes. Therefore, by applying a high-frequency voltage to the electrode on which the substrate is placed and arbitrarily controlling the inter-sheath voltage, it is possible to control the high plasma density and appropriate ion energy required for speeding up.

[0009]

It was previously mentioned that the energy of ions plays an important role in plasma processing.

Among the conventional techniques, the ECR method is disclosed in Japanese Patent Laid-Open No.
As shown in Japanese Patent Publication No. 6-13480, when a high frequency voltage is applied to an electrode on which a substrate is placed, since there is no ground electrode on the opposite side of this electrode, a high frequency current flows between the electrode and the surrounding processing chamber, The effect of ion energy above is strong around the substrate and weak at the center, and there is a problem that the entire substrate cannot be processed under uniform conditions.

Further, in the method using the cavity resonator, since the plasma is generated in the resonator, when the plasma is generated, the microwave wavelength changes depending on the density of the plasma, so that the resonance condition is not satisfied. There was a problem that the plasma became unstable. That is, since the resonance condition is satisfied until plasma is generated, the electric field strength of the microwave is increased and plasma is generated. However, when plasma is generated and the plasma density is increased, the wavelength of the microwave is changed and the resonance condition is not satisfied, and the electric field strength is reduced. Then, the supply of energy to the electrons is reduced and the plasma density is reduced. When the plasma density decreases, the resonance condition is satisfied, and the plasma density increases again. Due to such a phenomenon, it is difficult to stably generate plasma.

If a high frequency voltage applying electrode is provided in the cavity resonator in order to control the energy of the ions incident on the substrate from these plasmas, microwave reflection or the like occurs and the plasma becomes more unstable. There was a problem of becoming.

An object of the present invention is to generate stable and high-density plasma and to make the energy of ions incident on the substrate uniform over the entire substrate.

[0014]

Generally, when a microwave propagates in a waveguide or a cavity resonator which is considered to be a kind of waveguide, the surface of the waveguide corresponds to an electric field and a magnetic field. An electric current flows.

Therefore, when a slit is provided in a part of the waveguide so as to cross the current, electric charges are accumulated at both ends of the slit and change with the progress of microwaves, so that the electric field between both ends of the slit changes. Microwaves are radiated to the outside of the waveguide.

According to this principle, a microwave is supplied to the plasma generation chamber from a slit provided in the waveguide, or the waveguide is connected to a cavity resonator and the cavity resonator is connected to the cavity resonator. Provide a slit that radiates microwaves,
This can be achieved by providing microwaves to the plasma generation chamber.

[0017]

In the conventional ECR system, the microwave is directly radiated to the plasma generating chamber from the opening of the waveguide. Therefore, if a ground electrode is installed between the plasma generation chamber and the opening of the waveguide, microwaves are reflected by the ground electrode and cannot be supplied to the plasma generation chamber.

In the present invention, the end face of the waveguide is closed, and the end face is provided with a slit for radiating microwaves. Then, if necessary, the end face of this waveguide was set to the ground potential.

The opening area of the slit is equal to that of the entire end face of the waveguide.
It can be about 1/3. Therefore, when a high-frequency voltage is applied to the electrode on which the substrate is placed, the high-frequency current flows evenly between the end face of the waveguide and the electrode, and the effect of ions can be evenly generated on the entire surface of the substrate. In addition, a sufficient amount of microwaves can be supplied through the slit, and high density plasma can be generated.

On the other hand, when the cavity resonator is connected to the waveguide, the microwave whose amplitude is increased due to resonance in the cavity resonator is radiated to the plasma generation chamber through the slit.
Therefore, high-density plasma can be generated without using a cavity resonator structure in the plasma generation chamber as in the conventional case.

Therefore, the electrode structure according to the present invention is not restricted by the relationship with the cavity resonator as in the conventional case. Further, since plasma is not generated in the cavity resonator, there is no change in the resonance state and it is possible to stably generate plasma. Furthermore, by connecting the cavity resonator to the ground potential,
Similar to the case of the ECR method, the counter electrode can be parallel to the electrode, and the effect of ions can be uniformly generated on the entire substrate.

[0022]

Embodiment An embodiment of the present invention will be described below with reference to FIG.

The cavity resonator 1 is a circular cavity resonator of E ₀₁ mode, and microwaves are supplied from the magnetron 3 through the waveguide 2. The waveguide 2 is mounted eccentrically to the circular cavity resonator 1 in order to improve the coupling with the E ₀₁ mode. On the other side of the circular cavity resonator 1, a ceramic plate 4 and a slit plate 5 are fixed.
Below that, a plasma generation chamber 6 is connected. It should be noted that the structure is such that it is sealed in a vacuum by the ceramic plate 4.

As shown in FIG. 25b, the plane structure of the slit plate 5 has a ring-shaped slit opening in the direction perpendicular to the electric field of E ₀₁ mode. The length of each slit 5c is 2.4
When using a 5 GHz microwave, the size is set to 60 mm or more, which corresponds to 1/2 wavelength of the microwave, in order to improve the microwave radiation from the slit.

An electrode 7, a gas supply pipe 9 and a gas exhaust pipe 10 are provided in the plasma generation chamber 6 (FIG. 1). The electrode 7 is fixed to the plasma generation chamber 6 via an insulating material 8 and further connected to a high frequency power supply 11.

A plasma processing gas can be supplied to the gas supply pipe 9 from a gas source (not shown) at a set flow rate.

A vacuum exhaust pump (not shown) is connected to the gas exhaust pipe 10, and the inside of the plasma generating chamber is 1 to 10 to ³ To.
It can be controlled to the pressure of rr.

The magnetron 3 is operated to oscillate a microwave, and the microwave is supplied to the cavity resonator 1 by the waveguide 2. The energy of the microwave whose amplitude is increased in the cavity resonator is radiated from the slit of the slit plate 5 to the plasma generation chamber. Since the amplitude of the microwave radiated to the plasma generation chamber is large in the cavity resonator 1, the plasma generation chamber 6
The plasma is turned on and maintained even though the structure is not a cavity resonator.

First, the case of etching will be described.
An etching gas is supplied from the gas supply pipe 9, exhausted from the gas exhaust pipe 10 and a microwave is supplied at a constant pressure to generate plasma by the microwave between the slit plate 5 and the electrode 7. Since the microwave acts directly on the electrons in the plasma, the potential difference between this plasma and the electrode 7 is at a level of 20 to 30V. The processed wafer 12 is placed on the electrode 7, and a high frequency voltage is applied to the electrode 7 from the high frequency power supply 11. The electrode 7 and the slit plate 5 are installed in parallel, and the high-frequency current flows evenly between the electrode 7 and the slit 5. Therefore, the electric field generated between the electrode and the plasma becomes uniform, and the ions of the etching gas having uniform energy over the entire surface of the wafer 12 are controlled by the high-frequency voltage application and enter.

The ions of the etching gas or the active species (radicals) of the etching gas excited in the plasma react with the film to be processed on the wafer 12 to advance the etching.

At this time, since the energy of the incident ions is uniform, uniform etching can be performed on the entire surface of the wafer.

Next, the application of this apparatus to plasma CVD will be described. A mixed gas of SiH ₄ and N ₂ , N ₂ O is supplied from the gas supply pipe 9, N ₂ O and SiH ₄ are decomposed by plasma to generate SiO ₄ , and a film is formed on the wafer 12. Further, the film quality is controlled by the incidence of ions from the plasma. At this time, the incident energy of the ions can be equalized, so that uniform film formation can be performed on the entire surface of the wafer.

In this embodiment, the case where the microwave mode in the circular waveguide is the E ₀₁ mode has been described, but the present generation is not limited to this. However, if the slit is in the direction perpendicular to the current flowing on the surface of the cavity resonator, the microwave radiation is efficient, so that the structure shown in FIG. 3 is obtained in the case of the H ₀₁ mode, and the structure shown in FIG. 4 is obtained in the case of the H ₁₁ mode. It becomes the structure shown.

As described above, according to the present invention, it is possible to equalize the effect of the ions essential for plasma processing and to generate stable plasma.

In the embodiment shown in FIG. 1, only microwaves are radiated to the plasma generation chamber, so that the microwaves are reflected when the generated plasma density becomes 10 ¹¹ cm ^-3 or more,
The plasma density cannot be increased any further. When a plasma density of 10 ¹¹ cm ³ or more is required, a magnetic field 15 parallel to the microwave radiation direction is provided by a coil 13 and a coil 14 as shown in FIG.

In the case of this embodiment, since the amplitude of the microwave is increased by the cavity resonator 1, it is not necessary to set the electron cyclotron resonance state, and the magnetic field strength can be selected according to the required plasma density. . Further, since the microwave amplitude is larger than that of the conventional resonance method, there is also an effect that a stable discharge can be established in a region where the degree of vacuum is higher.

FIG. 6 shows an embodiment in which the present invention is applied to the ashing process.

In this embodiment, the parts having the same numbers as those shown in FIG. 1 are the same, so only the different parts will be described.

A mesh plate 2 is provided inside the plasma processing chamber 6.
0 and the wafer 12 is placed on the table 21.

Oxygen gas is supplied from the gas supply pipe 9, the magnetron 3 is operated, microwaves are supplied, and plasma is generated between the slit plate 5 and the mesh plate 20.

Since the mesh plate 20 is dimensioned so that microwaves cannot pass therethrough, the plasma is trapped between the mesh plate 5 and the slit. The oxygen gas becomes a radical state due to plasma, and passes through the mesh plate 20 to the wafer 1
2 on top. The oxygen radicals ash the resist film on the wafer.

In the above-described embodiments, the combination of the circular cavity resonator and the slit plate has been described, but the present invention is not limited to this.

An example applied to the sputtering apparatus will be described with reference to FIG.

The processing chamber 33 is made of ceramics, and a gas supply port and a gas exhaust port (not shown) are provided inside the processing chamber 33 for 10 to ⁴ To.
The pressure can be controlled to rr to 10 to ² Torr.

A target 34 and a wafer table 36 are provided in the processing chamber 33. A high frequency power supply 35 is connected to the target and a wafer table 36 is connected to the ground. A shield chamber 40 and a rectangular ring-shaped resonator 31 a are provided outside the processing chamber 33.

The ring-shaped resonator is a rectangular waveguide formed into a ring, and the circumference of the ring is an integral multiple of 1/2 of the guide wavelength. A terminal wall is provided at a part of the ring-shaped waveguide so that the position of the resonating microwave is not displaced.

The planar structure of the ring-shaped resonator 31a is shown in FIG. Microwaves are supplied to the resonator 31 from the magnetron 32 and the waveguide 30. A coil 37 and a coil 38 are provided outside the shield chamber 40 (FIG. 7), and
2 is generated. The shield chamber is made of aluminum or stainless steel and does not let out microwaves, but uses a material that allows magnetic fields to pass through.

A slit 4 around the entire circumference is provided inside the ring resonator.
3 is provided. When the microwave is supplied to the ring-shaped resonator, the amplitude of the microwave is amplified in the resonator, and the microwave having a large amplitude is radiated from the slit 43 into the processing chamber 33.

Argon gas was introduced into the processing chamber 33 to obtain 10
When the level is kept at ~ ³ Torr, plasma trapped in the Kaps magnetic field 42 is generated between the target 34 and the wafer table 36. Next, a high-frequency voltage is applied from the high-frequency power source 35, ions of argon gas are made incident on the target, and the target material is sputtered to form a film on the wafer 39. In this method, as described in the embodiment shown in FIG. 5, the microwave having a large amplitude can stably generate plasma even under the condition of a higher vacuum degree, and the film quality can be improved.

The method of combining the ring resonator and the slit can be used not only for sputtering but also for etching and plasma CVD.

FIG. 9 shows an embodiment applied to etching.

Since the basic structure is the same as that of the sputtering apparatus described in FIG. 7, only different points will be described.

A lower electrode 46 and an upper electrode 45 are provided in the processing chamber 33, and the lower electrode is fixed to the processing chamber through an insulator 41 so that a high frequency voltage can be applied from a high frequency power source 47. The upper electrode 45 is connected to the ground.

An etching gas is introduced to maintain the inside of the processing chamber 33 at a pressure of 10 to ² Torr level, and a microwave is supplied to the ring-shaped resonator 31. The amplitude of the microwave is amplified and radiated into the processing chamber through the slit 43, and plasma due to the microwave is generated between the upper electrode 45 and the lower electrode 46.

When a high frequency voltage is applied to the lower electrode 46,
A high-frequency current flows evenly between the parallel electrodes, and the ions incident on the wafer 39 are accelerated by the uniform potential difference between the sheaths, so that uniform etching processing characteristics can be obtained on the entire surface of the wafer.

As described above, according to the present invention, when the plasma is generated by using the microwave, the electrode can be installed on the surface facing the electrode for processing the wafer. Therefore, uniform plasma processing becomes possible. Furthermore,
Since the plasma generation chamber does not need to have a cavity resonator structure, there is an effect that there is no restriction on the electrode structure and the structure of the plasma generation chamber.

[0057]

According to the present invention, the microwave generated by the microwave generation source is resonated in the atmosphere to increase the amplitude and radiate into the processing chamber from the slit means to generate plasma in the processing chamber. The portion that resonates the microwave and the portion that generates plasma are separated, and it is possible to stably generate high-density plasma in the processing chamber.

Further, by arranging a plurality of slits of the slit means in an arc shape, it is possible to uniformly generate the effect of ions and radicals in the plasma on the object to be processed. It becomes possible to process the object uniformly.

As a result, plasma processing with high-speed and optimum ion energy becomes possible. Furthermore, a fine pattern of a semiconductor wafer can be formed with high accuracy and at high speed and with less damage. Furthermore, there is an effect that uniform film formation can be performed at high speed.

[Brief description of drawings]

FIG. 1 is a perspective view of an embodiment of the present invention,

2 is a plan view of a slit used in the embodiment of FIG.

3 is a plan view of another embodiment of the slit of FIG. 2,

4 is a plan view of a third embodiment of the slit of FIG. 2,

FIG. 5 is a sectional view of another embodiment of the present invention,

FIG. 6 is a cross-sectional view of one embodiment when the present invention is applied to an ashing device,

FIG. 7 is a cross-sectional view of an embodiment when the present invention is applied to a sputtering device,

8 is a plan view of a resonator used in the sputtering apparatus of FIG. 7,

FIG. 9 is a sectional view showing an embodiment when the present invention is applied to an etching or CVD apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Cavity resonator, 5 ... Slit plate, 6 ... Plasma generation chamber, 7 ... Electrode, 11 ... High frequency power supply, 31 ... Ring resonator, 33 ... Processing chamber, 34 ... Target, 36 ... Wafer table, 35 ... High frequency power supply.

Claims (6)

[Claims] 1. A microwave source, and slit means for arranging a slit for radiating the microwave supplied from the microwave source in a direction in which the slit crosses a surface current generated by the microwave at a substantially right angle. A plasma processing chamber for processing the substrate by introducing a microwave radiated from the slit means to generate plasma while maintaining a predetermined pressure inside the substrate, and the plasma processing chamber and the slit means. And a separating means for separating the microwave and transmitting the microwave, and the substrate is processed by the plasma generated by the microwave. 2. The plasma processing apparatus according to claim 1, wherein the slit is provided so as to cross the surface current substantially at right angles over a length of at least half the wavelength of the microwave. Wherein E ₀₁ mode and the microwave generating source for generating microwaves, the microwave micro slits for radiating microwaves of the E ₀₁ mode is supplied the slit of the E ₀₁ mode from the source Slit means in which a plurality of surface currents generated by waves are arranged in an arc shape in a direction transverse to a substantially right angle, and the E ₀₁ mode microwave radiated from the slit means in a state where a substrate is provided inside and a predetermined pressure is maintained. A plasma treatment chamber for introducing plasma to treat the substrate to treat the substrate, and a separation means for separating the plasma treatment chamber and the cavity resonator and transmitting the microwave, and generating by the microwave. A plasma processing apparatus, characterized in that the substrate is processed with a plasma. 4. The plasma processing apparatus according to claim 3, wherein said slit means has said slits arranged in a plurality of arcs. 5. A microwave generated by a microwave generation source is increased in amplitude in the atmosphere to radiate a substrate from a slit of a slit means to a plasma generation chamber maintained at a predetermined pressure to generate plasma. A plasma processing method comprising processing a substrate installed in the plasma processing chamber. 6. The plasma according to claim 5, wherein the microwave is radiated from the slit of the slit means while maintaining a resonance state without being influenced by plasma generated in the plasma processing chamber. Processing method.