JPH06338559A - Forcibly releasing method from electrostatic chuck - Google Patents
Forcibly releasing method from electrostatic chuckInfo
- Publication number
- JPH06338559A JPH06338559A JP12949293A JP12949293A JPH06338559A JP H06338559 A JPH06338559 A JP H06338559A JP 12949293 A JP12949293 A JP 12949293A JP 12949293 A JP12949293 A JP 12949293A JP H06338559 A JPH06338559 A JP H06338559A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- push
- members
- electrostatic chuck
- outer peripheral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 11
- 230000002093 peripheral effect Effects 0.000 claims description 36
- 230000001174 ascending effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 98
- 238000001816 cooling Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、静電チャックの載置面
に吸着されているウエーハを押上部材により押し上げて
載置面から離脱させる静電チャック強制離脱方法に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forcibly releasing an electrostatic chuck in which a wafer attracted to a mounting surface of an electrostatic chuck is pushed up by a push-up member to be separated from the mounting surface.
【０００２】[0002]
【従来の技術】イオン注入装置等の半導体製造装置の分
野において多用されている静電チャックは、処理対象で
あるウエーハが載置される載置面と、この載置面に極性
を付与する電源とを有しており、ウエーハを載置面に載
置させた後、或いは、載置される前に、電源をＯＮ状態
として載置面に極性を付与して吸着力を発生させ、ウエ
ーハを静電的に載置面に密接させるようになっている。
これにより、ウエーハは、全面が載置面に密接されるこ
とによって、高い冷却効率でもって冷却されるようにな
っていると共に、ウエーハを処理する際の位置ずれが防
止されるようになっている。2. Description of the Related Art An electrostatic chuck, which is widely used in the field of semiconductor manufacturing equipment such as an ion implantation apparatus, is a mounting surface on which a wafer to be processed is mounted and a power source for applying a polarity to the mounting surface. After placing the wafer on the placing surface, or before placing the wafer, the power is turned on to polarize the placing surface to generate an attracting force, and It is electrostatically brought into close contact with the mounting surface.
As a result, the entire surface of the wafer is brought into close contact with the mounting surface, so that the wafer can be cooled with high cooling efficiency and, at the same time, displacement of the wafer during processing can be prevented. .
【０００３】一方、ウエーハの処理が終了し、静電チャ
ックからウエーハを取り外す場合には、従来、電源のＯ
Ｎ−ＯＦＦに対する吸着力の発生および消滅の応答性が
低いため、電源をＯＦＦ状態にした後、吸着力が低下す
るまで所定時間放置する。そして、所定時間の経過後
に、載置台の下方からウエーハの下面外周部を複数の押
上部材により同時に押し上げ、残留する吸着力に抗して
ウエーハを載置面から離脱させることになる。On the other hand, when the wafer is removed from the electrostatic chuck after the processing of the wafer is completed, conventionally, the power source O
Since the responsiveness of the generation and disappearance of the suction force to N-OFF is low, the power source is turned off and then left for a predetermined time until the suction force decreases. Then, after a lapse of a predetermined time, the outer peripheral portion of the lower surface of the wafer is simultaneously pushed up by a plurality of push-up members from below the mounting table to separate the wafer from the mounting surface against the residual suction force.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記従
来の静電チャックからウエーハを取り外す静電チャック
強制離脱方法では、吸着力が残留しているため、ウエー
ハの下面外周部を複数の押上部材により同時に押し上げ
る際に、下記の問題を生じることになる。However, in the above-mentioned conventional electrostatic chuck forced release method for removing a wafer from the electrostatic chuck, since the attraction force remains, the outer peripheral surface of the lower surface of the wafer is simultaneously pushed by a plurality of pushing members. When pushing up, the following problems will occur.
【０００５】即ち、図５に示すように、ウエーハ５１を
載置面５２ａから離脱させるため、押上部材５３…を上
昇させた場合には、押上部材５３…による上方向への全
付勢力がウエーハ５１の外周部に付与されることにな
り、ウエーハ５１の全外周部が載置面５２ａから剥離す
ることになる。ところが、ウエーハ５１の外周部が載置
面５２ａから剥離しても、ウエーハ５１の内周部と載置
面５２ａとの接合面に働く吸着力が残留しているため、
この面状に働く吸着力によってウエーハ５１の外周部だ
けが大きく撓むことになる。That is, as shown in FIG. 5, when the push-up members 53 are raised in order to disengage the wafer 51 from the mounting surface 52a, the total upward biasing force of the push-up members 53. Since the outer peripheral portion of the wafer 51 is provided, the entire outer peripheral portion of the wafer 51 is peeled off from the mounting surface 52a. However, even if the outer peripheral portion of the wafer 51 is separated from the mounting surface 52a, the suction force acting on the joint surface between the inner peripheral portion of the wafer 51 and the mounting surface 52a remains,
Only the outer peripheral portion of the wafer 51 is largely bent due to the suction force acting on the surface.
【０００６】これにより、従来の静電チャック強制離脱
方法では、図６に示すように、大きな吸着力が残留して
いると、ウエーハ５１の全外周部に生じる大きな撓みに
よりウエーハ５１全体の反りが大きくなるため、ウエー
ハ５１の破損を招来し易いという問題がある。一方、ウ
エーハ５１の破損を防止するため、吸着力が低減するま
で放置時間を増大させると、生産性が低下するという問
題が生じることになる。As a result, in the conventional electrostatic chuck forced separation method, as shown in FIG. 6, when a large attracting force remains, the entire wafer 51 is warped due to a large bending generated in the entire outer peripheral portion of the wafer 51. Since it becomes large, there is a problem that the wafer 51 is likely to be damaged. On the other hand, if the standing time is increased until the suction force is reduced in order to prevent the damage of the wafer 51, the problem that the productivity decreases will occur.
【０００７】従って、本発明においては、大きな吸着力
が残留していても、ウエーハ５１を破損させることなく
載置面５２ａから離脱させることができる静電チャック
強制離脱方法を提供することを目的としている。Therefore, in the present invention, it is an object of the present invention to provide a method for forcibly releasing an electrostatic chuck which can remove a wafer 51 from a mounting surface 52a without damaging the wafer 51 even if a large attraction force remains. There is.
【０００８】[0008]
【課題を解決するための手段】本発明の静電チャック強
制離脱方法は、上記課題を解決するために、静電チャッ
クの載置面に吸着されているウエーハの外周部下面に複
数の押上部材を当接させ、ウエーハを押上部材により押
し上げて載置面から離脱させる際に、特定の押上部材を
他の押上部材に先立ってウエーハに当接させて押し上げ
ることを特徴としている。In order to solve the above-mentioned problems, a method of forcibly releasing an electrostatic chuck according to the present invention has a plurality of push-up members on the lower surface of the outer peripheral portion of a wafer attracted to a mounting surface of the electrostatic chuck. When the wafers are brought into contact with each other and the wafer is pushed up by the push-up member to be detached from the mounting surface, the specific push-up member is brought into contact with the wafer and pushed up before the other push-up members.
【０００９】[0009]
【作用】上記の構成によれば、特定の押上部材がウエー
ハに当接し、ウエーハの一方の外周部が押し上げられる
と、この一方の外周部から他方の外周部方向にかけて、
ウエーハが載置面から順に剥離されることになる。従っ
て、このウエーハの外周部が線状の吸着力に抗して押し
上げられることになるため、ウエーハ全体の反りが減少
したものになる。これにより、大きな吸着力が残留して
いても、ウエーハを破損させずに載置面から取り外すこ
とが可能になり、結果として、吸着力が低減するまでの
放置時間を短縮させて生産性を向上させることが可能に
なる。According to the above construction, when the specific push-up member is brought into contact with the wafer and one outer peripheral portion of the wafer is pushed up, from one outer peripheral portion to the other outer peripheral portion,
The wafer will be peeled off in order from the mounting surface. Therefore, since the outer peripheral portion of the wafer is pushed up against the linear suction force, the warp of the entire wafer is reduced. This allows the wafer to be removed from the mounting surface without damaging the wafer even if a large suction force remains, and as a result, the leaving time until the suction force is reduced is shortened and productivity is improved. It is possible to let
【００１０】[0010]
【実施例】本発明の一実施例を図１ないし図４に基づい
て説明すれば、以下の通りである。DESCRIPTION OF THE PREFERRED EMBODIMENTS The following will describe one embodiment of the present invention with reference to FIGS.
【００１１】本実施例に係る静電チャック強制離脱方法
は、図１に示すように、静電チャック２に保持されたウ
エーハ１を取り外すための方法である。静電チャック２
は、処理対象であるウエーハ１が載置される載置面２ａ
を有している。この静電チャック２の内部には、図示し
ない冷却系および電極が設けられており、冷却系は、載
置面２ａに載置されたウエーハ１を冷却することにより
処理時の過熱を防止するようになっている。また、電極
は、直流電源に接続されており、直流電源から直流電圧
が印加されることによって、載置面２ａの表面に誘電分
極による電荷を生じさせるようになっている。The method for forcibly releasing the electrostatic chuck according to this embodiment is a method for removing the wafer 1 held by the electrostatic chuck 2, as shown in FIG. Electrostatic chuck 2
Is a mounting surface 2a on which the wafer 1 to be processed is mounted.
have. A cooling system and electrodes (not shown) are provided inside the electrostatic chuck 2, and the cooling system cools the wafer 1 placed on the placing surface 2a to prevent overheating during processing. It has become. Further, the electrodes are connected to a DC power supply, and when a DC voltage is applied from the DC power supply, electric charges due to dielectric polarization are generated on the surface of the mounting surface 2a.
【００１２】上記の静電チャック２には、上下方向に連
通された貫通穴２ｂが形成されている。この貫通穴２ｂ
は、ウエーハ１の外周部の下方に位置するように、例え
ば３箇所等の複数箇所に配置されている。これらの貫通
穴２ｂ…には、押上部材３…がそれぞれ移動自在に挿通
されており、これらの押上部材３…のうちの特定の押上
部材３とウエーハ１との距離は、他の押上部材３…とウ
エーハ１との距離よりも２ｍｍ程度短くなるように設定
されている。尚、特定の押上部材３は、ウエーハ１の外
周部に偏在した位置であれば、複数本からなっていても
良い。The electrostatic chuck 2 is formed with a through hole 2b which is vertically communicated. This through hole 2b
Are arranged at a plurality of locations, such as three locations, so as to be located below the outer peripheral portion of the wafer 1. The push-up members 3 are movably inserted into the through holes 2b, and the distance between a specific push-up member 3 of the push-up members 3 and the wafer 1 is equal to that of the other push-up members 3. Is set to be about 2 mm shorter than the distance between the wafer 1 and the wafer 1. The specific push-up member 3 may be formed of a plurality of pieces as long as they are located in the outer peripheral portion of the wafer 1.
【００１３】上記の押上部材３…の上端は、押上部材３
…の上昇によりウエーハ１の外周部下面に当接するよう
になっている。一方、押上部材３…の下端には、押上部
材３…を上昇および下降させる移動機構が設けられてい
る。この移動機構は、全押上部材３…を同時に同一速度
でもって上昇させるようになっており、上昇速度は、特
定の押上部材３がウエーハ１に当接してから、他の押上
部材３…がウエーハ１に当接するまでの時間を調整でき
るように任意に変更可能になっている。The upper ends of the push-up members 3 ...
.. is brought into contact with the lower surface of the outer peripheral portion of the wafer 1. On the other hand, the lower end of the push-up members 3 ... Is provided with a moving mechanism for raising and lowering the push-up members 3. This moving mechanism is designed to raise all the push-up members 3 at the same speed at the same time, and the raising speed is such that after the specific push-up member 3 comes into contact with the wafer 1, the other push-up members 3 ... It can be arbitrarily changed so that the time until it comes into contact with 1 can be adjusted.
【００１４】上記の構成において、ウエーハ１を静電チ
ャック２に保持させる場合には、ウエーハ１が静電チャ
ック２の載置面２ａに載置された後、或いは、載置され
る前に、電源がＯＮ状態にされることによって、直流電
圧が電極に付与され、載置面２ａの表面に誘電分極によ
る電荷を生じさせることになる。これにより、載置面２
ａに載置されたウエーハ１は、クーロン力により載置面
２ａに吸着され、全面が載置面２ａに密接することによ
って、高い冷却効率でもって冷却されることになると共
に、ウエーハ１を処理する際の位置ずれが防止されるこ
とになる。In the above structure, when the wafer 1 is held by the electrostatic chuck 2, the wafer 1 is placed on the placing surface 2a of the electrostatic chuck 2 or before being placed. When the power is turned on, a DC voltage is applied to the electrodes, and charges due to dielectric polarization are generated on the surface of the mounting surface 2a. As a result, the mounting surface 2
The wafer 1 placed on a is adsorbed to the placing surface 2a by the Coulomb force, and the entire surface is brought into close contact with the placing surface 2a, so that the wafer 1 is cooled with high cooling efficiency and the wafer 1 is processed. The position shift when performing is prevented.
【００１５】次いで、ウエーハ１の処理が完了すると、
下記の静電チャック強制離脱方法によって、ウエーハ１
が載置面２ａから取り外されることになる。即ち、先
ず、静電チャック２からウエーハ１を取り外すため、電
源がＯＦＦ状態にされることになる。この後、移動機構
が作動され、全押上部材３…の上昇が開始されることに
なる。この際、待機状態における押上部材３…は、特定
の押上部材３とウエーハ１との距離が、他の押上部材３
…とウエーハ１との距離よりも短く設定されている。従
って、図２に示すように、特定の押上部材３のみが最初
にウエーハ１に当接することになり、この押上部材３に
当接したウエーハ１の一方の外周部のみが押し上げられ
ることになる。Next, when the processing of the wafer 1 is completed,
Wafer 1 can be
Will be removed from the mounting surface 2a. That is, first, since the wafer 1 is removed from the electrostatic chuck 2, the power is turned off. After that, the moving mechanism is operated, and the lifting of all the lifting members 3 ... Is started. At this time, when the push-up members 3 in the standby state are separated from each other by the distance between the specific push-up member 3 and the wafer 1.
... is set shorter than the distance between the wafer 1 and the wafer 1. Therefore, as shown in FIG. 2, only the specific push-up member 3 first comes into contact with the wafer 1, and only one outer peripheral portion of the wafer 1 that comes into contact with the push-up member 3 is pushed up.
【００１６】ところで、ウエーハ１を載置面２ａに吸着
させるクーロン力は、ウエーハ１および載置面２ａ間の
距離の増大に伴って極端に低下する特性を有している。
従って、図３に示すように、押上部材３に当接したウエ
ーハ１の一方の外周部が押し上げられると、この一方の
外周部から他方の外周部方向にかけて、ウエーハ１が載
置面２ａから順に剥離されることになる。また、ウエー
ハ１が載置面２ａから順に剥離されていく際のウエーハ
１全体の反りは、線状の吸着力に抗して外周部が押し上
げられているため、面状の吸着力に抗して全外周部を同
時に押し上げる場合よりも、減少したものになってい
る。By the way, the Coulomb force for attracting the wafer 1 to the mounting surface 2a has a characteristic that it is extremely reduced as the distance between the wafer 1 and the mounting surface 2a increases.
Therefore, as shown in FIG. 3, when one outer peripheral portion of the wafer 1 that is in contact with the push-up member 3 is pushed up, the wafer 1 is sequentially arranged from the mounting surface 2a from one outer peripheral portion toward the other outer peripheral portion. It will be peeled off. Further, the warp of the entire wafer 1 when the wafer 1 is sequentially peeled from the mounting surface 2a is resisted against the planar suction force because the outer peripheral portion is pushed up against the linear suction force. This is less than the case where the entire outer peripheral portion is pushed up at the same time.
【００１７】特定の押上部材３がウエーハ１に当接して
から所定の時間が経過すると、図４に示すように、移動
機構による押上部材３…の上昇に伴って他の押上部材３
…がウエーハ１に当接することになる。この際、ウエー
ハ１は、一方の外周部から他方の外周部にかけて順に剥
離され、載置面２ａとの接触面積が充分に縮小された状
態になっている。従って、ウエーハ１は、押上部材３…
により全外周部が押し上げられても、大きな撓みを生じ
ることなく載置面２ａから離脱されることになる。When a predetermined time elapses after the specific push-up member 3 comes into contact with the wafer 1, as shown in FIG. 4, as the push-up members 3 ...
... comes into contact with the wafer 1. At this time, the wafer 1 is sequentially peeled from one outer peripheral portion to the other outer peripheral portion, and the contact area with the mounting surface 2a is sufficiently reduced. Therefore, the wafer 1 has the push-up members 3 ...
Thus, even if the entire outer peripheral portion is pushed up, the entire outer peripheral portion is detached from the mounting surface 2a without causing a large bending.
【００１８】このように、本実施例の静電チャック強制
離脱方法は、載置面２ａに吸着されているウエーハ１の
外周部下面に複数の押上部材３…を当接させ、ウエーハ
１を押上部材３…により押し上げて載置面２ａから離脱
させる際に、特定の押上部材３を他の押上部材３…に先
立ってウエーハ１に当接させて押し上げることを特徴と
して有している。As described above, according to the method of forcibly releasing the electrostatic chuck of the present embodiment, the plurality of push-up members 3, ... Are brought into contact with the lower surface of the outer peripheral portion of the wafer 1 attracted to the mounting surface 2a to push up the wafer 1. When the members 3 are pushed up to be detached from the placement surface 2a, the specific push-up member 3 is brought into contact with the wafer 1 before the other push-up members 3 are pushed up.
【００１９】これにより、特定の押上部材３が当接する
ことによって、ウエーハ１の一方の外周部が押し上げら
れると、この一方の外周部から他方の外周部方向にかけ
て、ウエーハ１が載置面２ａから順に剥離されるため、
このウエーハ１の外周部が線状の吸着力に抗して押し上
げられ、ウエーハ１全体の反りが減少したものになる。
従って、大きな吸着力が残留していても、ウエーハ１を
破損させずに載置面２ａから取り外すことが可能にな
り、ひいては、吸着力が低減するまでの放置時間の短縮
により生産性を向上させることが可能になる。As a result, when one outer peripheral portion of the wafer 1 is pushed up by the contact of the specific push-up member 3, the wafer 1 is moved from the mounting surface 2a from the one outer peripheral portion toward the other outer peripheral portion. Because they are peeled off in order,
The outer peripheral portion of the wafer 1 is pushed up against the linear suction force, and the warp of the entire wafer 1 is reduced.
Therefore, even if a large suction force remains, it is possible to remove the wafer 1 from the mounting surface 2a without damaging the wafer 1 and, by extension, improve the productivity by shortening the standing time until the suction force is reduced. It will be possible.
【００２０】尚、本実施例においては、押上部材３…お
よびウエーハ１間の距離を異ならせ、全押上部材３…を
同時に上昇させることによって、特定の押上部材３を他
の押上部材３…に先立ってウエーハ１に当接させて押し
上げるようになっているが、これに限定されることはな
い。即ち、押上部材３…の上昇時期を個別に設定する機
能を移動機構に持たせることによって、特定の押上部材
３を他の押上部材３…に先立ってウエーハ１に当接させ
て押し上げるようになっていても良い。そして、この場
合には、各押上部材３…の上昇時期を個別に変更するこ
とができるため、ウエーハ１を最も効率良く取り外せる
ように微調整できることになる。In the present embodiment, the distances between the push-up members 3 ... And the wafer 1 are made different, and all the push-up members 3 ... The wafer 1 is first contacted with the wafer 1 and pushed up, but the invention is not limited to this. That is, by providing the moving mechanism with the function of individually setting the rising timing of the push-up members 3, ..., The specific push-up member 3 is brought into contact with the wafer 1 prior to the other push-up members 3 ,. It may be. In this case, the rising timing of each of the push-up members 3 ... Can be changed individually, so that the wafer 1 can be finely adjusted so as to be removed most efficiently.
【００２１】[0021]
【発明の効果】本発明の静電チャック強制離脱方法は、
以上のように、静電チャックの載置面に吸着されている
ウエーハの外周部下面に複数の押上部材を当接させ、ウ
エーハを押上部材により押し上げて載置面から離脱させ
るものであり、特定の押上部材を他の押上部材に先立っ
てウエーハに当接させて押し上げる構成である。The method of forcibly releasing the electrostatic chuck of the present invention is as follows.
As described above, a plurality of push-up members are brought into contact with the lower surface of the outer peripheral portion of the wafer adsorbed on the placing surface of the electrostatic chuck, and the wafer is pushed up by the pushing-up member to be separated from the placing surface. The push-up member is brought into contact with the wafer and pushed up before the other push-up members.
【００２２】これにより、特定の押上部材がウエーハに
当接し、ウエーハの一方の外周部が押し上げられると、
この一方の外周部から他方の外周部方向にかけて、ウエ
ーハが載置面から順に剥離されることになる。よって、
このウエーハの外周部が線状の吸着力に抗して押し上げ
られ、ウエーハ全体の反りが減少するため、大きな吸着
力が残留していても、ウエーハを破損させずに載置面か
ら取り外すことが可能になり、結果として、吸着力が低
減するまでの放置時間を短縮させて生産性を向上させる
ことが可能になるという効果を奏する。As a result, when the specific push-up member comes into contact with the wafer and one outer peripheral portion of the wafer is pushed up,
The wafer is sequentially peeled from the mounting surface from the one outer peripheral portion toward the other outer peripheral portion. Therefore,
The outer periphery of this wafer is pushed up against the linear suction force and the warpage of the entire wafer is reduced, so even if a large suction force remains, it can be removed from the mounting surface without damaging the wafer. As a result, there is an effect that the leaving time until the suction force is reduced can be shortened and the productivity can be improved.
【図１】本発明を示すものであり、待機状態の押上部材
を示す説明図である。FIG. 1 illustrates the present invention, and is an explanatory diagram showing a push-up member in a standby state.
【図２】特定の押上部材がウエーハに当接した状態を示
す説明図である。FIG. 2 is an explanatory view showing a state in which a specific push-up member is in contact with a wafer.
【図３】特定の押上部材の上昇によりウエーハが一方側
から他方側にかけて順に剥離される状態を示す説明図で
ある。FIG. 3 is an explanatory view showing a state in which a wafer is peeled off in sequence from one side to the other side due to a rise of a specific push-up member.
【図４】ウエーハが載置面から離脱された状態を示す説
明図である。FIG. 4 is an explanatory view showing a state in which the wafer is separated from the mounting surface.
【図５】従来例を示すものであり、全押上部材によりウ
エーハを押し上げる状態を示す説明図である。FIG. 5 shows a conventional example and is an explanatory view showing a state in which a wafer is pushed up by a full push-up member.
【図６】従来例を示すものであり、ウエーハが破損した
状態を示す説明図である。FIG. 6 shows a conventional example and is an explanatory view showing a state where a wafer is damaged.
１ ウエーハ ２ 静電チャック ２ａ 載置面 ２ｂ 貫通穴 ３ 押上部材 1 Wafer 2 Electrostatic chuck 2a Mounting surface 2b Through hole 3 Push-up member
Claims (1)
エーハの外周部下面に複数の押上部材を当接させ、ウエ
ーハを押上部材により押し上げて載置面から離脱させる
静電チャック強制離脱方法において、 特定の押上部材を他の押上部材に先立ってウエーハに当
接させて押し上げることを特徴とする静電チャック強制
離脱方法。1. An electrostatic chuck forced disengagement in which a plurality of push-up members are brought into contact with the lower surface of the outer peripheral portion of the wafer attracted to the mounting surface of the electrostatic chuck, and the wafer is pushed up by the push-up member to separate from the mounting surface. A method of forcibly releasing an electrostatic chuck, characterized in that a specific push-up member is brought into contact with a wafer and pushed up prior to another push-up member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12949293A JP2920239B2 (en) | 1993-05-31 | 1993-05-31 | Forced release of electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12949293A JP2920239B2 (en) | 1993-05-31 | 1993-05-31 | Forced release of electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06338559A true JPH06338559A (en) | 1994-12-06 |
| JP2920239B2 JP2920239B2 (en) | 1999-07-19 |
Family
ID=15010822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12949293A Expired - Fee Related JP2920239B2 (en) | 1993-05-31 | 1993-05-31 | Forced release of electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2920239B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003017550A (en) * | 2001-06-27 | 2003-01-17 | Shin Sti Technology Kk | Chuck for fixing substrate and method for peeling substrate off from chuck |
| GB2527921A (en) * | 2014-05-15 | 2016-01-06 | Infineon Technologies Ag | Wafer releasing |
-
1993
- 1993-05-31 JP JP12949293A patent/JP2920239B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003017550A (en) * | 2001-06-27 | 2003-01-17 | Shin Sti Technology Kk | Chuck for fixing substrate and method for peeling substrate off from chuck |
| JP4681763B2 (en) * | 2001-06-27 | 2011-05-11 | 住友化学株式会社 | Substrate fixing chuck and substrate peeling method from the chuck |
| GB2527921A (en) * | 2014-05-15 | 2016-01-06 | Infineon Technologies Ag | Wafer releasing |
| US9410249B2 (en) | 2014-05-15 | 2016-08-09 | Infineon Technologies Ag | Wafer releasing |
| GB2527921B (en) * | 2014-05-15 | 2016-10-19 | Infineon Technologies Ag | Wafer releasing |
| US10186445B2 (en) | 2014-05-15 | 2019-01-22 | Infineon Technologies Ag | Wafer releasing |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2920239B2 (en) | 1999-07-19 |
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