JPH06334218A - Led element - Google Patents
Led elementInfo
- Publication number
- JPH06334218A JPH06334218A JP12126693A JP12126693A JPH06334218A JP H06334218 A JPH06334218 A JP H06334218A JP 12126693 A JP12126693 A JP 12126693A JP 12126693 A JP12126693 A JP 12126693A JP H06334218 A JPH06334218 A JP H06334218A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- light emitting
- emitting diode
- crystal layer
- epitaxial crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は可視発光ダイオード素子
の高輝度化と高信頼性化に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high brightness and high reliability of a visible light emitting diode device.
【０００２】[0002]
【従来の技術】従来のＧａＰ基板結晶を用いた発光ダイ
オード素子の構造を図３に天面図（ａ）および側断面図
（ｂ）で示す。この構造は、Ｎ型ＧａＰ基板１上に、液
相エピタキシャル結晶成長法を用いて、Ｎ型エピタキシ
ャル結晶層２及びＰ型エピタキシャル結晶層３を成長さ
せ、ＰＮ接合を形成している。次に、Ｎ型ＧａＰ基板１
の裏面にＡｕ合金等を蒸着させてＮ電極４を形成し、ま
たＰ型エピタキシャル結晶層３の表面にＰ電極５を形成
している。2. Description of the Related Art The structure of a conventional light emitting diode element using a GaP substrate crystal is shown in FIG. 3 as a top view (a) and a side sectional view (b). In this structure, an N-type epitaxial crystal layer 2 and a P-type epitaxial crystal layer 3 are grown on an N-type GaP substrate 1 by a liquid phase epitaxial crystal growth method to form a PN junction. Next, the N-type GaP substrate 1
An Au alloy or the like is vapor-deposited on the back surface of the N electrode 4 to form the N electrode 4, and a P electrode 5 is formed on the surface of the P type epitaxial crystal layer 3.
【０００３】さらに、光の外部取出し効率を高めて発光
ダイオード素子の高輝度化を図るために、発光ダイオー
ド素子の天面６のＰ電極５の外側をＨＣｌ（塩酸）等で
エッチングして粗化したものが使用されている。Further, in order to improve the efficiency of extracting light to the outside to increase the brightness of the light emitting diode element, the outside of the P electrode 5 on the top surface 6 of the light emitting diode element is roughened by etching with HCl (hydrochloric acid) or the like. What has been used is being used.
【０００４】図４は従来の発光ダイオード素子のＰ電極
端部の拡大断面図である。図４において、エッチング部
６がＰ電極下端からＰ電極５の下部に入り込み、そのサ
イドエッチング量８’は平均２〜３μｍとなっていた。FIG. 4 is an enlarged sectional view of a P electrode end portion of a conventional light emitting diode element. In FIG. 4, the etching portion 6 entered from the lower end of the P electrode to the lower portion of the P electrode 5, and the side etching amount 8 ′ was 2 to 3 μm on average.
【０００５】[0005]
【発明が解決しようとする課題】従来例の発光ダイオー
ド素子で天面をエッチングにより粗化したものは、Ｐ電
極５の下部までエッチングが進行することがある。この
ため、発光ダイオード素子をコレットによりダイスボン
ディングする場合のストレスやキャピラリによりＰ電極
５へワイヤボンディングする場合のストレスにより、Ｐ
電極５の下部でＰ型結晶層３にクラックが発生しやすい
課題があった。本発明は、前記クラックの発生しない発
光ダイオード素子を提供することにある。In the conventional light emitting diode element whose top surface is roughened by etching, the etching may proceed to the lower portion of the P electrode 5. Therefore, due to the stress when dicing the light emitting diode element with the collet and the stress when wire bonding with the capillary to the P electrode 5, P
There is a problem that cracks are likely to occur in the P-type crystal layer 3 below the electrode 5. The present invention is to provide a light emitting diode device in which the crack does not occur.
【０００６】[0006]
【課題を解決するための手段】本発明の発光ダイオード
素子は、天面のエッチングによる粗化の際に、同天面の
電極周辺に非粗化部を設けて、電極部と粗化部とを分離
したものである。In the light emitting diode element of the present invention, when the top surface is roughened by etching, a non-roughened portion is provided around the electrode on the top surface to form an electrode portion and a roughened portion. Is separated.
【０００７】[0007]
【作用】本発明の発光ダイオード素子は、電極の周囲に
エッチングによる粗化を行わない、非粗化部を有するた
め、Ｐ電極下部までエッチングが進行しない。このた
め、ダイスボンディングやワイヤーボンディング時にＰ
電極下部のＰ型結晶層にクラックが発生しないことにな
る。Since the light emitting diode device of the present invention has the non-roughened portion which is not roughened by etching around the electrode, the etching does not proceed to the lower portion of the P electrode. For this reason, P can be used during die bonding and wire bonding.
This means that no crack is generated in the P-type crystal layer below the electrode.
【０００８】[0008]
【実施例】以下、図面に基づいて本発明の実施例を説明
する。図１は本発明の一実施例に係る発光ダイオード素
子の天面図（ａ）と側断面図（ｂ）である。この構造
は、Ｎ型のＧａＰ基板１上に液相エピタキシャル結晶成
長法を用いて、Ｎ型エピタキシャル結晶層２及びＰ型エ
ピタキシャル結晶層３を成長させ、ＰＮ接合を形成す
る。次にＮ型ＧａＰ基板１の裏面にＡｕ合金等を蒸着さ
せてＮ電極４を形成し、またＰ型結晶層３の表面にＰ電
極５を形成した後、Ｐ電極５の周囲をＳｉＯ2膜でマス
キングする。この後発光ダイオード素子の天面をＨＣｌ
等でエッチングして粗化した後、マスキング部のＳｉＯ
2膜を除去する。これにより、Ｐ電極５の周囲にエッチ
ングを行わない非粗化部、すなわち、非エッチング部７
を設けることができ、Ｐ電極５は安定した状態でＰ型エ
ピタキシャル結晶層３に載置されることになる。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a top view (a) and a side sectional view (b) of a light emitting diode device according to an embodiment of the present invention. In this structure, an N-type epitaxial crystal layer 2 and a P-type epitaxial crystal layer 3 are grown on an N-type GaP substrate 1 using a liquid phase epitaxial crystal growth method to form a PN junction. Then, an Au alloy or the like is vapor-deposited on the back surface of the N-type GaP substrate 1 to form an N electrode 4, and a P electrode 5 is formed on the surface of the P type crystal layer 3, and then a SiO 2 film is formed around the P electrode 5. Mask with. After this, the top surface of the light emitting diode element is
After etching and roughening with, etc., SiO of the masking part
2 Remove the film. As a result, the non-roughened portion where the etching is not performed around the P electrode 5, that is, the non-etched portion 7
Can be provided, and the P electrode 5 is mounted on the P type epitaxial crystal layer 3 in a stable state.
【０００９】次に、詳細にＰ電極端部の構造を説明す
る。図２は本発明の一実施例に係るＰ電極端部の拡大断
面図である。図２ではＰ電極５の下端に０．５μｍ以下
のサイドエッチング量８に相当する構造が見られるが、
これは電極エッチングによるものであり、クラック発生
の現象からみると、実用上ほとんど問題にならない。こ
うして発光ダイオード素子天面のエッチング部６は非エ
ッチング部７があるためにＰ電極５に達することがな
い。この結果、実際に同一組立条件のもとで、従来の発
光ダイオード素子と本発明の発光ダイオード素子のクラ
ック発生率を比較したところ、従来構造の発光ダイオー
ド素子において数百ｐｐｍのクラック発生率が本発明の
発光ダイオード素子ではゼロであることが確認された。Next, the structure of the end portion of the P electrode will be described in detail. FIG. 2 is an enlarged cross-sectional view of a P electrode end portion according to an embodiment of the present invention. In FIG. 2, a structure corresponding to a side etching amount 8 of 0.5 μm or less is seen at the lower end of the P electrode 5,
This is due to the etching of the electrodes, and in view of the phenomenon of crack generation, it poses almost no practical problem. Thus, the etched portion 6 on the top surface of the light emitting diode element does not reach the P electrode 5 because of the non-etched portion 7. As a result, under the same assembly conditions, the crack occurrence rates of the conventional light emitting diode element and the light emitting diode element of the present invention were compared. It was confirmed that the light emitting diode element of the invention had a value of zero.
【００１０】[0010]
【発明の効果】本発明によれば、発光ダイオード素子天
面のエッチングによる粗化が電極下部まで進行すること
がなく、発光ダイオードの組立て（特にダイスボンディ
ング及びワイヤーボンディング）時に電極下部にクラッ
クが発生することがない。したがって、発光ダイオード
の高輝度化と高信頼性化に大きく寄与することができ
る。According to the present invention, the roughening of the top surface of the light emitting diode element due to etching does not proceed to the lower part of the electrode, and a crack is generated in the lower part of the electrode during assembly of the light emitting diode (particularly die bonding and wire bonding). There is nothing to do. Therefore, it is possible to greatly contribute to high brightness and high reliability of the light emitting diode.
【図１】本発明の一実施例に係る発光ダイオード素子の
構造図FIG. 1 is a structural diagram of a light emitting diode device according to an embodiment of the present invention.
【図２】本発明の一実施例に係る発光ダイオード素子の
Ｐ電極端部断面図FIG. 2 is a sectional view of an end portion of a P electrode of a light emitting diode device according to an embodiment of the present invention.
【図３】従来の発光ダイオード素子の構造図FIG. 3 is a structural diagram of a conventional light emitting diode device.
【図４】従来の発光ダイオード素子のＰ電極端部断面図FIG. 4 is a cross-sectional view of a P electrode end portion of a conventional light emitting diode element.
１ Ｎ型ＧａＰ基板 ２ Ｎ型エピタキシャル結晶層 ３ Ｐ型エピタキシャル結晶層 ４ Ｎ電極 ５ Ｐ電極 ６ エッチング部 ７ 非エッチング部 ８、８’ サイドエッチング量 1 N-type GaP substrate 2 N-type epitaxial crystal layer 3 P-type epitaxial crystal layer 4 N electrode 5 P electrode 6 etching part 7 non-etching part 8, 8'side etching amount
Claims (1)
成長法を用いてＮ型エピタキシャル結晶層及びＰ型エピ
タキシャル結晶層を成長させＰＮ接合を形成した発光ダ
イオード素子において、同発光ダイオード素子の天面電
極外周に、同天面のエッチング粗化部から分離する所定
幅の非粗化領域を配置したことを特徴とする発光ダイオ
ード素子。1. A light emitting diode device in which an N type epitaxial crystal layer and a P type epitaxial crystal layer are grown on a GaP substrate by a liquid phase epitaxial crystal growth method to form a PN junction. A light emitting diode element, characterized in that a non-roughened region having a predetermined width, which is separated from an etched and roughened portion on the top surface, is arranged on the outer periphery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12126693A JPH06334218A (en) | 1993-05-24 | 1993-05-24 | Led element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12126693A JPH06334218A (en) | 1993-05-24 | 1993-05-24 | Led element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06334218A true JPH06334218A (en) | 1994-12-02 |
Family
ID=14807003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12126693A Pending JPH06334218A (en) | 1993-05-24 | 1993-05-24 | Led element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06334218A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003524884A (en) * | 1999-09-10 | 2003-08-19 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Light-emitting diode with patterned surface |
| JP2005116615A (en) * | 2003-10-03 | 2005-04-28 | Dowa Mining Co Ltd | Semiconductor light emitting element and its manufacturing method |
| JP2010045288A (en) * | 2008-08-18 | 2010-02-25 | Shin Etsu Handotai Co Ltd | Light-emitting element and manufacturing method thereof |
| EP2234182A1 (en) * | 2007-12-28 | 2010-09-29 | Nichia Corporation | Semiconductor light emitting element and method for manufacturing the same |
| JP2018050070A (en) * | 2017-11-21 | 2018-03-29 | ローム株式会社 | Semiconductor light emitting element |
| JP2020065041A (en) * | 2018-10-12 | 2020-04-23 | ローム株式会社 | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device |
| US11626539B2 (en) | 2018-10-12 | 2023-04-11 | Rohm Co., Ltd. | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device |
-
1993
- 1993-05-24 JP JP12126693A patent/JPH06334218A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003524884A (en) * | 1999-09-10 | 2003-08-19 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Light-emitting diode with patterned surface |
| JP2005116615A (en) * | 2003-10-03 | 2005-04-28 | Dowa Mining Co Ltd | Semiconductor light emitting element and its manufacturing method |
| EP2234182A1 (en) * | 2007-12-28 | 2010-09-29 | Nichia Corporation | Semiconductor light emitting element and method for manufacturing the same |
| JP5310564B2 (en) * | 2007-12-28 | 2013-10-09 | 日亜化学工業株式会社 | Semiconductor light emitting device and manufacturing method thereof |
| JP2013211595A (en) * | 2007-12-28 | 2013-10-10 | Nichia Chem Ind Ltd | Method for manufacturing semiconductor light-emitting element |
| EP2234182A4 (en) * | 2007-12-28 | 2014-09-03 | Nichia Corp | Semiconductor light emitting element and method for manufacturing the same |
| US8883529B2 (en) | 2007-12-28 | 2014-11-11 | Nichia Corporation | Method for manufacturing semiconductor light emitting device |
| US9159868B2 (en) | 2007-12-28 | 2015-10-13 | Nichia Corporation | Method for manufacturing semiconductor light emitting device |
| JP2010045288A (en) * | 2008-08-18 | 2010-02-25 | Shin Etsu Handotai Co Ltd | Light-emitting element and manufacturing method thereof |
| JP2018050070A (en) * | 2017-11-21 | 2018-03-29 | ローム株式会社 | Semiconductor light emitting element |
| JP2020065041A (en) * | 2018-10-12 | 2020-04-23 | ローム株式会社 | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device |
| US11626539B2 (en) | 2018-10-12 | 2023-04-11 | Rohm Co., Ltd. | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device |
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