JPH06326144A - Manufacture of resin-sealed semiconductor device - Google Patents

Abstract

PURPOSE:To eliminate the defect of an element due to the deformation of a TAB lead or a wire which is connected to a semiconductor chip and to manufac ture the subject semiconductor device in a short time by a method wherein the semiconductor chip and an unhardened resin sheet are pressurized, an unhardened resin is hardened and the semicodnuctor chip is resin-sealed. CONSTITUTION:Unhardened resin sheets 1 are arranged on the inside of a pad part at the side of an active face of a semiconductor chip 2 and on the back side of the semiconductor chip 2, they are pressurized and heated by using a press-type metal mold, and an unhardened resin is hardened. At this time, the unhardened resin sheet 1 which has been arranged on the inside of the pad part is heater and melted. Then, the resin sheet is brought into contact with wires 3a or TAB leads 3b in a state that its viscosity has been lowered sufficiently. At this time, the unhardened resin sheet 1 flows to the outer circumferential direction from the inside of the pad part of the semiconductor chip 2, a force which is applied to the wires 3a or the TAB leads 3b is reduced, and it is possible to prevent the wires 3a or the TAB leads 36 from being deformed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an ultrathin resin-sealed semiconductor device.

[0002]

2. Description of the Related Art Conventionally, resin-sealed semiconductor devices have been sealed by a transfer molding method. This method heats and melts uncured resin such as epoxy molding material mainly composed of epoxy resin and filler, injects it into a mold using a transfer molding machine, molds it at high temperature and high pressure, and cures it. This is a method of sealing a semiconductor chip mounted on a lead frame, for example. The resin-encapsulated semiconductor device manufactured by this method is excellent in reliability because the semiconductor chip is completely covered with the cured product of the epoxy resin composition, and the external appearance of the package for dense molding with a mold. Most of the resin-encapsulated semiconductor devices are currently manufactured by this method because they are also good.

However, as the size of semiconductor chips has increased in recent years due to the increase in size of semiconductor chips and the package size of resin-encapsulated semiconductor devices has increased, thinning of the package and the increase in the number of pins have been accompanied by the miniaturization of the mounting space. The trend is strengthening, and this trend is expected to become stronger and stronger in the future.
In addition, the types of packages will become more diverse in the future, and it is expected that conventional transfer molding methods will not be able to adequately support them. Under such circumstances, there is a demand for development of a flexible production mode capable of high-mix low-volume production. further,
There is a problem of in-line production process. That is, the semiconductor device manufacturing process is fully automated, and is automated by a single production line. However, it is difficult to inline the encapsulation process of semiconductor devices by conventional transfer molding, and manufacturing is performed by batch processing with the line removed, and a new production mode that allows inline encapsulation process is required. Has been.

From this point of view, a method of manufacturing a resin-encapsulated semiconductor device (hereinafter referred to as FOC method) using an uncured resin sheet obtained by impregnating a glass woven cloth called resin with a resin has been proposed. There is. (JP-A-2-257662
issue). In this method, for example, a semiconductor chip connected to a TAB lead via a bump or a semiconductor chip connected to a lead frame via a wire is sandwiched between uncured resin sheets and heated with pressure using a mold having a recess. In this way, the uncured resin is cured, and this method can be used for larger and thinner packages compared to conventional transfer molding methods, and is suitable for high-mix low-volume production of resin-encapsulated semiconductor devices. ing. However, since the uncured resin sheet comes into contact with the TAB lead or the wire in a state where the viscosity of the uncured resin sheet is high, there is a problem that the wire or the TAB lead is deformed. FIG. 7 is a vertical sectional view showing a modification of the TAB lead connected to the semiconductor chip. In this case, when the package 10 is molded, the uncured resin is pressed on the TAB lead 6 in a high viscosity state.
The T connected to the end of the semiconductor chip 2 by the bump 5.
The AB leads 3b come into contact with each other, resulting in a defective element. FIG. 8 is a vertical cross-sectional view showing a modification of the wire connecting the lead frame and the semiconductor chip. In this case as well, similarly to the TAB lead, the wire 3a connecting the semiconductor chip to the package lead frame 7 comes into contact with the end portion of the semiconductor chip 2 and an element failure occurs.

[0005]

As described above, the transfer molding method is unsuitable for making the package large, thin, or producing a large number of various products in small quantities. Also, in the FOC method, the wire or TAB lead is deformed and the semiconductor chip end is deformed. There is a problem that the lead comes into contact with the part to cause an element failure. It is an object of the present invention to solve the above problems of the present invention and to provide a highly reliable method of manufacturing an ultrathin resin-sealed semiconductor device in which a wire or a TAB lead does not come into contact with an end portion of a semiconductor chip. And

[0006]

According to the first aspect of the present invention, a semiconductor chip connected to a lead structure and an uncured resin sheet arranged inside a pad portion of the semiconductor chip are pressed and uncured. It is a method of manufacturing a resin-encapsulated semiconductor device, which comprises a step of curing a resin and sealing the semiconductor chip with a resin (first manufacturing method).

In the second invention of the present application, the semiconductor chip connected to the lead structure and the molten uncured resin or liquid uncured resin in the mold disposed on the active surface side of the semiconductor chip are pressed and It is a method of manufacturing a resin-sealed semiconductor device, which comprises a step of hardening an uncured resin and sealing the semiconductor chip with a resin (second manufacturing method).

According to a third aspect of the present invention, a semiconductor chip connected to the lead structure and an uncured resin sheet having at least the contact surface melted and temporarily fixed to the active surface side of the semiconductor chip are pressed together with the uncured resin. And a step of resin-sealing the semiconductor chip, which is a method of manufacturing a resin-sealed semiconductor device (third manufacturing method).

FIGS. 1 and 2 are longitudinal sectional views when an uncured resin sheet is placed inside a pad of a semiconductor chip in the method of manufacturing a resin-sealed semiconductor device according to the first aspect of the present invention. Hereinafter, the method for manufacturing a resin-sealed semiconductor device of the present invention will be described in more detail with reference to FIGS. 1 and 2 as appropriate.

In the present invention, the connection between the lead structure and the semiconductor chip 2 can be achieved by wire bonding as well as T
Alternatively, wireless bonding such as AB may be used. In the present invention, the types of the lead structure and the semiconductor chip 2 are not particularly limited. In the present invention, the lead structure means the lead frame 7, the TAB lead 3b.
TAB tape 6 having a pin, a circuit board having external pins, and a wire 3 for connecting these to the semiconductor chip 2.
a or bump 5 and the like.

Examples of the material of the uncured resin forming the uncured resin sheet 1 include thermosetting resins and engineering plastics. However, since the resin viscosity at the time of integral molding is low, a dense sealing can be achieved. The application of a thermosetting resin for curing is preferred. Specific examples of the thermosetting resin that can be used in the present invention include epoxy resin, polyimide resin, maleimide resin, silicone resin, phenol resin, polyurethane resin and the like. These resins may be used alone or in combination, and in these resins, a curing agent, a catalyst, a plasticizer, a colorant, a flame retardant,
It may contain a filler and other various additives. In the second invention of the present application, as the liquid uncured resin, either a solvent type in which the uncured resin is dissolved in a solvent or a solventless type mainly composed of a liquid uncured resin can be used.

Specific methods for curing such a resin include a method of heating a mold used in integral molding, a method of selectively heating only an uncured resin by induction heating, and the like.

Further, in the present invention, the uncured resin may be reinforced with various woven fabrics. As the material of the woven fabric, there are glass, quartz, carbon fiber, silicon carbide, silicon nitride, aluminum nitride, alumina, zirconia, potassium titanate fiber, etc. in the inorganic type, and nylon type, acrylic type, vinylon type, poly type in the organic type. Vinyl chloride type, polyester type,
There are aramid-based, phenol-based, rayon-based, acetate-based, cotton, hemp, silk, and wool. These may be used alone or in combination.

Further, in the present invention, an uncured resin sheet obtained by laminating a metal material on the above-mentioned uncured resin may be used. In this case, the uncured resin sheet is arranged so that the uncured resin side of the uncured resin sheet and the active surface side of the semiconductor chip face each other. Further, at this time, it is desirable to use an uncured resin sheet in which an uncured resin, a metal material and an insulating resin layer are laminated. It is also possible to use the uncured resin sheet only on the active surface side of the semiconductor chip and use only the metal material on the back surface side. The shape of the metal material at this time is not particularly limited and may be appropriately selected from metal foil, metal plate, metal block and the like according to the type of package, but a metal foil having a thickness of 100 μm or less is preferably used. .

The material of the metal material is preferably a metal having high thermal conductivity and excellent adhesiveness to a resin, and examples of metals preferably used include, for example, iron, copper, aluminum, nickel, chromium, zinc, Tin, silver, gold, lead, magnesium, titanium, zirconia, tungsten, molybdenum, cobalt, stainless steel, 42 nickel-iron alloy,
Examples include brass, duralumin, and alloys of these.
However, when aiming to make the package thinner, it is desirable to use a material that can be processed particularly thin and is lightweight.

The uncured resin sheet used in the present invention is, for example, an epoxy resin, a curing agent, a catalyst, a filler,
It can be easily produced by crushing, mixing, melting and rolling other materials. When using a prepreg reinforced with a woven fabric such as glass fiber,
Resin, curing agent, catalyst, filler, and other materials are dissolved in a solvent such as acetone to prepare a solution having an appropriate concentration, and this solution is applied to a woven cloth, or a woven cloth is impregnated into the solution, The solvent may be volatilized by a method such as leaving it, heating it, or placing it under reduced pressure.

In the method for manufacturing a resin-sealed semiconductor device according to the present invention, one uncured resin sheet is used as shown in FIG. 2 to seal a semiconductor chip from one side, and one is not sealed as shown in FIG. The semiconductor chip may be sealed from both sides with a cured resin sheet. These are appropriately selected depending on the form of connection between the lead structure and the semiconductor chip. For example, in a form in which a semiconductor chip is wire-bonded to a lead frame, these are sealed from both sides with two uncured resin sheets. In addition, the semiconductor chip is the TA of the TAB tape.
In the form of connection with the B lead, the uncured resin sheet is arranged only on the active surface side of the semiconductor chip, or the uncured resin sheet is sandwiched between two uncured resin sheets for sealing. Further, in the form in which the semiconductor chip is mounted on the circuit board, the semiconductor chip is sealed from one side with one uncured resin sheet.

Next, a preferable mold used in the present invention will be specifically described. FIG. 3 is a vertical sectional view of an example of a press-type die used in the FOC method. This mold is composed of a frame-shaped mold 8 and a press mold 9 that fits with the frame-shaped mold 8.

In the present invention, the semiconductor chip and the uncured resin sheet connected to the lead structure as described above are arranged in such a press type mold, and the frame-shaped mold 8 is applied to the lead structure. The resin-sealed semiconductor device according to the present invention is manufactured by contacting and pressing and heating the uncured resin sheet using the inner press die 9.

Further, an example of the resin-sealed semiconductor manufacturing apparatus according to the present invention will be described. FIG. 4 is a schematic view showing an example of a resin-sealed semiconductor manufacturing apparatus according to the present invention. As shown in the figure, this manufacturing apparatus seals a semiconductor chip connected to a TAB lead with a lead frame made of, for example, a long metal film when sealing a semiconductor chip connected to a lead frame. At this time, for example, a TAB tape made of polyimide is used as a tape base material, and a tape transport reel 100a and a tape winding reel 100 are used.
The tape base material is conveyed by b. First, the tape base material on which the semiconductor chips are mounted is transported from the tape transport reel 100a, and the resin sheet is temporarily fixed to the active surface side and the back surface side of the semiconductor chip in the resin sheet temporary fixing portion 300 through the heating tank 200. Next, a predetermined package is resin-sealed in a press unit 400 including press-type dies 500a and 500b including a frame-shaped die and a press die. The tape base material on which the semiconductor chip is mounted after the resin sealing is wound up by the tape winding reel 100b. A heating bath for after-curing the resin may be provided between the press section 400 of this semiconductor device and the tape winding reel 100b. Further, the temporary fixing unit 300 has a positioning sensor, and the resin sheet is transported to a predetermined position in the sealing area of the semiconductor chip by a vacuum chuck method and temporarily fixed to the heated semiconductor chip. By using such a manufacturing apparatus, according to the present invention, the resin-sealed semiconductor device can be continuously manufactured.

[0021]

In the method of manufacturing a resin-encapsulated semiconductor device according to the present invention, the TAB lead or the TAB lead is contacted with the wire or the TAB lead while the viscosity of the encapsulating resin is sufficiently reduced by the above-mentioned structure. It is possible to prevent deformation of the wire.

A more specific description will be given below. In the first manufacturing method, as shown in FIG. 1, the uncured resin sheet 1 is arranged inside the pad portion on the active surface side of the semiconductor chip 2 and on the back surface side of the semiconductor chip 2, and the press-type gold sheet as described above is used. The uncured resin is cured by applying pressure and heating using a mold. At this time, the uncured resin sheet 1 arranged inside the pad portion is melted by heating and flows in the outer peripheral direction from the inside of the pad portion of the semiconductor chip 2 in a state where the viscosity is reduced. Is reduced and the wire 3a can be prevented from being deformed. Further, as shown in FIG. 2, even in the case of using the TAB tape 6, it is possible to prevent the TAB lead 3b from being deformed by the same action. Further, when the TAB tape 6 is used, it is possible to dispose the uncured resin sheet 1 only on the active surface side of the semiconductor chip 2 as described above.

As a second manufacturing method, FIG. 5 shows a vertical cross-sectional view when the liquid uncured resin as described above is arranged on the active surface side of the semiconductor chip. As shown in the figure, in the second manufacturing method, after the semiconductor chip 2 having the uncured resin sheet 1 arranged on the back surface is dipped in the liquid uncured resin 4a, a press type of a frame-shaped die 8 and a press die 9 is used. Since the liquid uncured resin 4b is cured by pressing and heating with a mold, the force applied to the wire 3a is reduced, and the deformation of the wire 3a can be prevented. Further, as in the case of the first manufacturing method, the TAB lead can be prevented from being deformed by the same action even in the form using the TAB tape. Furthermore, when the TAB tape is used, it is possible to seal the semiconductor chip 2 without using the uncured resin sheet 1 on the back surface side. The same effect can be obtained by using a heat-melted uncured resin instead of the liquid uncured resin.

Further, as a third manufacturing method, FIG. 6 shows a vertical sectional view when a part of an uncured resin sheet is melted and temporarily fixed to a semiconductor chip. As shown in the figure, in the third manufacturing method, after heating the semiconductor chip 2 connected to the wire 3a, the uncured resin sheet 1 is brought into contact with the active surface and the back surface of the semiconductor chip 2. At this time, the uncured resin sheet 1 on the active surface side of the semiconductor chip is melted in the vicinity of the contact portion between the heated semiconductor chip 2 and the wire 3a and its viscosity is lowered, so that the wire 3a can be temporarily fixed without being deformed. Furthermore, in order to sufficiently reduce the viscosity of the uncured resin 4b melted near the contact portion, it is desirable to adjust the temporary fixing speed during temporary fixing. It is also possible to temporarily fix the uncured resin sheet 1 by heating and melting a part of the uncured resin sheet 1 and then bringing the melted part into contact with the semiconductor chip 2. Then, the uncured resin sheet is pressed and heated to be cured, whereby the wire 3a
It is possible to perform resin sealing without deforming the resin.
Further, similarly to the first manufacturing method, even in the form using the TAB tape, it is possible to prevent the deformation of the TAB lead by the same action. Further, when the TAB tape is used, the uncured resin sheet can be arranged only on the active surface side of the semiconductor chip as described above.

In the first, second and third manufacturing methods as described above, the viscosity for not deforming the wire or the TAB lead is preferably 800 poise or less, and the uncured resin when contacting with the wire or the TAB lead is used. Is preferably heated to a temperature at which this occurs.

The heating temperature when the molten uncured resin is used in the second manufacturing method and the heating temperature at the time of temporary fixing in the third manufacturing method are heat treatment at 150 ° C. or lower so as not to cure the resin during melting. Is desirable. Further, since the temporary fixing also has an effect of preventing positional deviation during transportation, it is possible to prevent positional deviation during transportation by performing temporary fixing when disposing the uncured resin sheet, not limited to the third manufacturing method. it can.

[0027]

EXAMPLE 1 TQFP (Thin Quad Fl) according to the first manufacturing method of the present invention described above.
A resin-encapsulated semiconductor device having a size shown in Table 2 of 184 pins was prepared.

At this time, using the test semiconductor chip of the size shown in Table 2 connected to the lead structure by wire bonding and the uncured resin shown in Table 1, the semiconductor manufacturing apparatus of FIG. 4 and the semiconductor manufacturing apparatus of FIG. A mold was used.

An embodiment will be described below with reference to FIG. First, the lead frame serving as the tape base material is set so that the active surface side of the semiconductor chip faces upward, and the heating bath 200
After heating this semiconductor chip to 150 ° C with
An uncured resin sheet of the size shown in Table 2 was temporarily fixed at 00 at the temporary fixing speed shown in Table 2. At this time, on the active surface side of the semiconductor chip, the uncured resin sheet was temporarily fixed so as to fit inside the pad portion. Next, the mold 500a heated to 175 ° C.,
Using b, pressure was applied for 20 seconds at a pressure of 15 kg / cm ² to cure the uncured resin and seal the resin. In this way, 2
0 resin-sealed semiconductor devices were continuously produced.

After measuring the thickness of the package of the obtained resin-encapsulated semiconductor device, a void check by an image of an ultrasonic flaw detector and a wire deformation presence or absence by X-ray photography are observed, and then an initial defect check by a tester. 128 ° C /
A moisture resistance reliability test (pressure cooker test) in water vapor at 2.5 atmospheric pressure was performed. The results are shown in Table 2.

Embodiment 2 TQFP (Thin Quad Fl) is applied by the second manufacturing method of the present invention described above.
A resin-encapsulated semiconductor device having a size shown in Table 2 of 184 pins was prepared.

At this time, using the test semiconductor chip of the size shown in Table 2 connected to the lead structure by wire bonding and the uncured resin shown in Table 1, the semiconductor manufacturing apparatus of FIG. The mold shown was used.

An embodiment will be described below with reference to FIG. First, a lead frame serving as a tape base material is set so that the back surface side of the semiconductor chip faces upward, the semiconductor chip is heated to 150 ° C. in a heating tank 200, and then the temporary fixing portion 30.
At 0, the uncured resin sheet of the size shown in Table 2 is temporarily fixed on the back surface side of the semiconductor chip at the temporary fixing speed shown in Table 2, and the uncured resin sheet of the size shown in Table 2 is further placed in the recess of the mold 500b. It was placed and melted at 150 ° C. Next mold 500
The mold 500b in which the uncured resin was melted in a and the concave portion was heated to 175 ° C. and pressed at a pressure of 15 kg / cm ² for 20 seconds to cure the uncured resin, and the resin was sealed. In this way, 20 resin-sealed semiconductor devices were continuously produced.

After measuring the thickness of the package of the obtained resin-encapsulated semiconductor device, a void check by an image of an ultrasonic flaw detector and the presence or absence of wire deformation by X-ray photography are observed, and then an initial defect check by a tester. To 128 ° C
A moisture resistance reliability test (pressure cooker test) in water vapor at /2.5 atm was performed. The results are shown in Table 2.

Embodiment 3 In the third manufacturing method of the present invention described above, TQFP (Thin Quad Fl)
A resin-encapsulated semiconductor device having a size shown in Table 2 of 184 pins was prepared.

At this time, using the test semiconductor chip of the size shown in Table 2 connected to the lead structure by wire bonding and the uncured resin shown in Table 1, the semiconductor manufacturing apparatus of FIG. The mold shown was used.

An embodiment will be described below with reference to FIG. First, the lead frame serving as the tape base material is set so that the active surface side of the semiconductor chip faces upward, and the heating bath 200
After heating the semiconductor chip to 150 ° C. with
The uncured resin sheet having a size of 00 shown in Table 2 is shown in Table 2.
The temporary stop was performed at the temporary stop speed shown in. Next, using the molds 500a and 500b heated to 175 ° C., pressure of 15 kg / cm ² was applied for 20 seconds to cure the uncured resin, and the resin was sealed. In this way, 20 resin-sealed semiconductors were obtained. The device was serially produced.

After measuring the thickness of the package of the obtained resin-encapsulated semiconductor device, a void check by an image of an ultrasonic flaw detector and a wire deformation presence or absence by X-ray photography are observed, and then an initial defect check by a tester. To 128 ° C
A moisture resistance reliability test (pressure cooker test) in water vapor at /2.5 atm was performed. The results are shown in Table 2.

Embodiment 4 The TQFP (Thin Quad Fl) is applied by the second manufacturing method of the present invention described above.
A resin-encapsulated semiconductor device having a size shown in Table 2 of 184 pins was prepared.

At this time, a test semiconductor chip of the size shown in Table 2 connected to the lead structure by TAB,
The uncured resin shown in Table 1 was used, and the semiconductor manufacturing apparatus shown in FIG. 4 and the mold shown in FIG. 3 were used.

Twenty Ts are processed in the same manner as in the second embodiment.
AB type resin-sealed semiconductor devices were continuously produced. After measuring the thickness of the package of the obtained resin-encapsulated semiconductor device, the void check by the image of the ultrasonic flaw detector and the presence or absence of deformation of the TAB lead by X-ray imaging are observed,
Then, from the initial defect check by the tester, 128 ° C /
A moisture resistance reliability test (pressure cooker test) in water vapor at 2.5 atmospheric pressure was performed. The results are shown in Table 2.

Embodiment 5 The TQFP (Thin Quad Fl) is applied by the first manufacturing method of the present invention described above.
A resin-encapsulated semiconductor device having a size shown in Table 2 of 184 pins was prepared.

At this time, a test semiconductor chip having a size shown in Table 2 connected to the lead structure by TAB,
The uncured resin shown in Table 1 was used, and the semiconductor manufacturing apparatus shown in FIG. 4 and the mold shown in FIG. 3 were used.

Twenty Ts are processed in the same manner as in the first embodiment.
AB type resin-sealed semiconductor devices were continuously produced. After measuring the package thickness of the obtained resin-encapsulated semiconductor device, the ultrasonic flaw detector image was used to check for voids and the presence or absence of wire deformation by X-ray imaging. A moisture resistance reliability test (Pusher-Cooker test) in /2.5 atm and steam was performed. The results are shown in Table 2.

Comparative Example 1 A TQFP (Thin Quad Flat Package) 184 using the same chip, uncured resin sheet and mold as in Example 3 was used.
A resin-encapsulated semiconductor device having the size shown in Table 2 of pin was created.

First, a lead frame serving as a tape base material is set so that the active surface side of the semiconductor chip faces upward, the semiconductor chip is heated to 150 ° C. in a heating tank 200, and then the temporary fixing portion 300 is applied to the back surface side. The uncured resin sheet having the size shown in Table 2 was temporarily fixed. After leaving this semiconductor chip to reach room temperature, the same uncured resin sheet was set on the active surface side of the semiconductor chip. Next, using the molds 500a and 500b heated to 175 ° C., the speed and pressure shown in Table 2 were set to 10
A pressure of 20 kg / cm ² was applied for 20 seconds for curing, and resin sealing was performed. In this way, 20 resin-sealed semiconductor devices were created.

After measuring the thickness of the package of the obtained resin-encapsulated semiconductor device, a void check by an image of an ultrasonic flaw detector and the presence or absence of wire deformation by X-ray photography are observed, and an initial defect check by a tester. Was carried out.
The results are shown in Table 2.

Comparative Example 2 TQFP (Thin Quad Flat Package) 184pin using the same chip, uncured resin and mold as in Example 4.
The resin-sealed semiconductor device having the size shown in Table 2 was prepared.

First, the TAB tape is set so that the active surface side of the semiconductor chip faces upward, the semiconductor chip is heated to 150 ° C. in the heating tank 200, and then the temporary fixing portion 30 is formed.
At 0, an uncured resin sheet of the size shown in Table 2 was temporarily attached to the back side. After leaving this semiconductor chip to reach room temperature, the same uncured resin sheet was set on the active surface side of the semiconductor chip. Next, the molds 500a, b heated to 175 ° C.
20 at the speed and pressure of 10 kg / cm ² shown in Table 2.
It was pressed for 2 seconds to be cured and resin-sealed. 2 in this way
0 TAB type resin-sealed semiconductor devices were created.

After measuring the thickness of the package of the obtained resin-encapsulated semiconductor device, a void check is performed by an image of an ultrasonic flaw detector, and the presence or absence of deformation of the TAB lead is observed by X-ray photography. A defect check was performed. The results are shown in Table 2.

From these results, when the resin-encapsulated semiconductor device manufacturing method of the present invention was used, the package thickness was reduced to 0.
The length can be set to 6 mm, and since the package is thin, the heating and curing time is as short as 20 seconds. Further, since it is possible to prevent the generation of voids and the deformation of the wires and the TAB leads, it can be seen that there are few initial defects.

[0052]

[Table 1]

[0053]

[Table 2]

[0054]

As described above in detail, according to the present invention, T
Since there is no contact between the AB lead or wire and the semiconductor chip, it is possible to manufacture a highly reliable ultrathin resin-sealed semiconductor device.

[Brief description of drawings]

FIG. 1 is a vertical cross-sectional view when an uncured resin sheet is arranged inside a pad portion of a semiconductor chip in a method for manufacturing a resin-encapsulated semiconductor device of the present invention.

FIG. 2 is another vertical cross-sectional view when the uncured resin sheet is arranged inside the pad portion of the semiconductor chip in the method for manufacturing a resin-encapsulated semiconductor device of the present invention.

FIG. 3 is a vertical cross-sectional view of a press-type die used in the present invention.

FIG. 4 is a schematic diagram of a resin-sealed semiconductor manufacturing apparatus used in the present invention.

FIG. 5 is a vertical cross-sectional view when an uncured resin melted in a mold is arranged on the active surface side of a semiconductor chip in the method of manufacturing a resin-encapsulated semiconductor device of the present invention.

FIG. 6 is a vertical cross-sectional view when a part of an uncured resin sheet is melted and temporarily fixed to a semiconductor chip in the method for manufacturing a resin-encapsulated semiconductor device of the present invention.

FIG. 7: TAB in a conventional resin-sealed semiconductor device
FIG. 6 is a vertical cross-sectional view showing deformation of the lead.

FIG. 8 is a vertical cross-sectional view showing a deformation of a wire in a conventional resin-sealed semiconductor device.

[Explanation of symbols]

 1 uncured resin sheet 2 semiconductor chip 3a wire 3b TAB lead 4a liquid uncured resin 4b uncured resin 5 bump 6 TAB tape 7 lead frame 8 frame die 9 press die 10 package 100a tape transport reel 100b tape winding Reel 200 Heating tank 300 Temporary fixing part 400 Press part 500a, 500b Mold

Claims (3)

[Claims] 1. A semiconductor chip connected to a lead structure and an uncured resin sheet arranged inside a pad portion of the semiconductor chip are pressed and the uncured resin is cured to seal the semiconductor chip with a resin. A method of manufacturing a resin-encapsulated semiconductor device, comprising a step of stopping. 2. The semiconductor chip connected to the lead structure and the molten uncured resin or liquid uncured resin in the mold disposed on the active surface side of the semiconductor chip are pressed and the uncured resin is cured. And a step of sealing the semiconductor chip with a resin, the method for manufacturing a resin-sealed semiconductor device. 3. A semiconductor chip connected to a lead structure and an uncured resin sheet, which has at least a contact surface melted and temporarily fixed to the active surface side of the semiconductor chip, is pressed and the uncured resin is cured, A method of manufacturing a resin-encapsulated semiconductor device, comprising a step of resin-encapsulating a semiconductor chip.