JPH0629434A - Heat dissipation device - Google Patents

Abstract

PURPOSE:To provide a thermoelectric cooling device which can compete various compression-type cooling devices by increasing remarkably the efficiency of a heat dissipation device. CONSTITUTION:A heat dissipation device is divided into a heat absorption member 7 and a heat dissipation member 10, and heat medium liquid is circulated in the heat dissipation device. By contacting directly a substrate 18 of a thermoelectric semiconductor with the heat medium liquid, heat dissipation without heat conductive loss is made. As a result, heat dissipation effects increase due to synergetic effects of the heat absorption member 7 and the heat dissipation member 10, and cooling efficiency increases remarkably.

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat dissipation device used in combination with a thermoelectric semiconductor utilizing the Peltier effect.
More specifically, it relates to a heat dissipation device in which a heat absorbing metal block and a known heat exchanger in which a pipe is passed through a metal plate are combined, and a heat transfer liquid is circulated in the heat dissipation device. Further, the present invention relates to a heat dissipation device in which a substrate of thermoelectric semiconductor is brought into direct contact with cooling water. [0002] That is, according to the present invention, when a direct current is applied to a closed circuit formed by connecting two different metals, conductors or semiconductors in series, one joint generates heat and the other joint absorbs (cools). Basically, a thermoelectric semiconductor utilizing the so-called Peltier effect is used. The thermoelectric semiconductor operates only by passing a direct current, and by simply switching its polarity (+,-), heating and cooling can be performed, so that highly accurate temperature control is possible. [0003] [Prior Art] Conventionally, in practical use of a thermoelectric semiconductor, whether or not the ability can be sufficiently exerted depends on the performance of a radiator (heat sink) combined with the thermoelectric semiconductor. [0004] A conventional air-cooled radiator uses a structure in which a large number of fins are provided on the surface of a metal block in order to improve the heat dissipation effect, for example, an extruded aluminum product as shown in FIG. 1 is used. ing. [0005] In this air-cooled radiator, heat diffused by heat transfer is carried away from the surface of the fin of the metal block integrally extruded by the ventilation. [0006] A conventional water-cooled radiator (water-cooled jacket) has a hole penetrating through a metal block as shown in FIG. 2A or a fin side as shown in FIGS. 2B and 2C. A fixed pipe is used for cooling by external water flow. [0007] The metal block by ventilation cooling provided with a large number of fins has a shape of the fins according to its manufacturing method,
There was a limit to how large the surface area could be, no matter how the height, the number, etc. were devised. However, if the surface area is forcibly increased, not only the weight is increased due to the design, but also the entire apparatus becomes undesirably large. [0008] A water-cooled forced cooling radiator is disclosed in
As disclosed in Japanese Patent No. 36334, the heat absorption from the metal block has been devised, but the drainage of the cooling water is either discarded or is cooled separately and reused. [0009] In the water-cooled type, not only is it costly to supply and drain cooling water, or to cool and circulate, but there is a large restriction on the installation site, and therefore it cannot be used for portable, mobile equipment and devices. . [0010] Furthermore, in the conventional water-cooled radiator, water flowing therein causes water stains, rust, and other inconvenient substances to adhere to the heat transfer surface, that is, the tube wall, which not only significantly reduces the cooling effect but also corrodes the device. There are drawbacks. [0011] The problem to be solved by the present invention is to eliminate the above-mentioned drawbacks of the conventional radiator of this kind. More specifically, it is an object of the present invention to easily expand the surface area of the members constituting the radiator and to obtain an efficient radiator that is comparable to a water-cooled radiator even though it is a ventilation cooling radiator. [0012] Another object of the present invention is to obtain a heat dissipation device having no contact thermal resistance with the substrate of the thermoelectric semiconductor. [0013] This problem is a heat sink
The problem is solved by dividing into two blocks, one of which is a heat absorbing member and the other of which is a heat radiating member (heat exchanger), and a heat transfer liquid is circulated between the two. [0014] It is also solved by directly contacting the substrate of the thermoelectric semiconductor with cooling water. [0015] Embodiments of the present invention include the following. (A) A mode in which a heat-absorbing member is provided on the heat-dissipating surface side of a thermoelectric semiconductor of this type that has been conventionally known. (B) Contrary to (a), an aspect in which a heat absorbing member is provided on the heat absorbing surface side of the thermoelectric semi-conductor. (C) A closed circuit in which the heat absorbing member and the heat radiating member are connected by a pipe or the like to circulate the heat medium liquid. (D) A heat transfer medium that circulates between the heat absorbing member and the heat radiating member moves by natural convection to carry heat. (E) A heat medium liquid that circulates between the heat absorbing member and the heat radiating member is forcibly moved by a pump or the like. (F) A flexible member such as rubber is used to connect between each member and to the pump, if necessary. (G) A thermoelectric semiconductor application product in which the thermoelectric semiconductor substrate attached to the heat absorbing member is brought into direct contact with a heat transfer liquid. (H) A thermoelectric semiconductor application product in which the heat absorbing member and the heat radiating member are separated in a heat transferable state. [0016] In the heat dissipation device that constitutes a closed circuit in which the heat absorption member and the heat dissipation member, and a pump and the like are interposed, the heat absorption member penetrates at least one or more holes at important points of the metal block. The heat dissipation member has a large number of metal plates 1
It is preferable to apply a known heat exchanger, for example, as shown in FIG. [0017] [Operation] When electricity is applied to the thermoelectric semiconductor, one of the thermoelectric semiconductors is cooled by heat absorption due to the Peltier effect,
The other one generates heat due to the heat absorption. The heat on the heat generation side is absorbed by the heat absorbing member, and the absorbed heat is sent to the heat exchanger constituting the heat radiating member by the heat medium liquid circulating in the heat absorbing member and radiated to the atmosphere. [0018] A container, a device, a plate, an electronic substrate, a tank, a chamber, an apparatus, etc. can be freely joined or combined with the heat absorbing side, and the temperature thereof can be controlled. [First Embodiment] The first embodiment will be described with reference to the drawings. In FIG. 4, the length is 30 mm, the width is 30 mm, and the thickness is 3 m.
A conventional radiator 5 as a body to be cooled is bonded to one ceramic substrate 4 of the thermoelectric semiconductor 3 of m through silicon grease. On the other hand, the heat absorbing member 7 of the present invention is bonded to the ceramic substrate 6 on the heat radiation side through the same silicone grease. The heat absorbing member 7 is provided with a hole 8 through which a heat transfer liquid flows, which penetrates the heat absorbing member 7. U-shaped 180 ° elbows 9 are respectively connected to the pipes 11 of the heat dissipation member 10 at the ends of the holes 8. [0020] The heat dissipation member 10 may be a known heat exchanger, in which case, as shown in FIG. 3, the wall thickness is 1 mm, the width is 30 mm, and the length is 150 mm.
Fifty mm aluminum plates 1 are arranged at 2 mm intervals, and aluminum pipes 11 having a diameter of 6 mm and a thickness of 1 mm are soldered to the aluminum plates 1 at positions corresponding to the holes 8 of the heat absorbing member 7. [0021] The surface area of the heat dissipation member 10 in this embodiment reaches about 2.3 m ² , which is 2 to 4 times as large as that of the conventional heat radiator of the same size. [0022] The heat absorbing member 7 and the heat radiating member 10 have U at one end.
They are connected by a letter-shaped 180 ° elbow 9, but the other ends are each equipped with a micropump. An example of this micropump (which cannot be shown because it is on the opposite side in the figure) is a "bimorph pump" of Misuzu Erie Co., Ltd., which utilizes a piezoelectric element. Although this pump has almost no vibration and has a long life, it is desirable to use a flexible tube for at least a part of the connection. [0023] The heat medium flowing through the heat absorbing member 7, the heat radiating member 10, the elbow 9, the pipe 11, the pump, etc. is water and completely sealed, and these are forcedly circulated to carry heat. ing. The air in the water is preferably removed. As a result, the heat radiation effect was improved by 30% to 70% as compared with the conventional radiator having the same weight. [Embodiment 2] This embodiment is shown in FIG. 5, in which both the heat absorbing member 12 and the heat radiating member 13 are connected to a single pipe 14, and the heat medium water is sent by a single pump 15. Reference numeral 16 is a thermoelectric semiconductor, and a radiator on the heat absorption side, a container, and others are omitted in the figure. [Third Embodiment] This embodiment is shown in FIG. 6, and a hole 19 for mounting a thermoelectric semiconductor substrate 18 is made in the heat absorbing member 17. The thermoelectric semiconductor substrate 18 is hermetically bonded to the hole 19. The hole 19 and the thermoelectric semiconductor substrate 18 are preferably circular in terms of mounting work. The thermoelectric semiconductor substrate 18 should not be distorted. As a countermeasure, a partition 20 may be formed in a part of the heat absorbing member and used. Alternatively, the thermoelectric semiconductor substrate 18 may be reinforced by providing irregularities on the water side.
Further, the thermoelectric semiconductor substrate 18 is not limited to the conventional ceramics. For example, a copper disc having a thickness of 3 mm and a diameter of 50 mm may be coated on one side with a heat-resistant insulating material having a thickness of 0.3 mm. As the coating, thermal spraying of alumina A ₂ O ₃ can be exemplified. The sprayed coating is subjected to a predetermined polishing process to form a thermoelectric semiconductor substrate. As the substrate of the thermoelectric semiconductor, any material or combination of materials having excellent heat conductivity and excellent electrical insulation properties may be used. If necessary, a synthetic diamond film may be coated on the disk, for example CVD.
The method (JP-A-58-156594) can be presented.
21 is a pump. However, it is necessary to consider electric contact in joining the substrate 18 and the heat absorbing member 17. [0026] The joint surface between the ceramic substrate of the thermoelectric semiconductor and the heater or the heat absorber is the performance of the radiator, that is, the heat radiation effect. That is, since it is extremely important to evaluate the performance of thermoelectric semiconductors, many efforts have been made in the past to improve the contact thermal resistance of the joint surface. In a large radiator that is one of the application purposes of the present invention, the accuracy of this joint surface, that is, the flatness of both, smoothness, surface roughness, variation in the coating thickness of silicon grease, sandwiching an air layer, and finally Inconvenience is likely to occur in the tightening pressure of both, and they become fatal contact heat resistance and the quality is not constant, and the joint surface may move loosely, which causes damage to the thermoelectric semiconductor. It has become worse and the quality has deteriorated. In the third embodiment, these joint surfaces that generate the contact thermal resistance are eliminated, and the thermoelectric semiconductor substrate having extremely excellent heat transfer performance is brought into direct contact with the heat transfer medium (water). [Example 4] In this example, the heat absorbing member of Example 3 is used as a water-cooled member. [0028] There is no heat radiator or heat absorber having a contact thermal resistance of zero. [0029] There has been no example in which a substrate of a thermoelectric semiconductor is directly contacted with a heat medium liquid such as water. [0030] This allows the thermoelectric semiconductor substrate to directly contact the water of the heat transfer medium and directly transfer heat to the water. In this example, the heat dissipation effect was further improved by 30% to 60%. [Embodiment 5] In this embodiment, a heat absorbing pipe is joined to the surface of the heat absorbing member shown in FIG. [0032] [Embodiment 6] In this embodiment, the pump of the heat dissipation device is omitted.
This is because the heat transfer liquid naturally convects inside the heat dissipation device. At this time, the through holes are preferably placed vertically in the vertical direction. Further, it is desirable that the pipe is in the horizontal position and the fins are oriented vertically in the vertical direction. As described in detail above, according to the present invention,
Various effects as listed below can be obtained. [0034] (1) As a radiator of a thermoelectric semiconductor utilizing the Peltier effect, the heat absorbing member and the heat radiating member are separately arranged, so that the heat absorbing member functions as a water-cooled cooler, and the heat radiating member is a known heat radiating member. It works as a exchanger and has a great heat dissipation effect. [0035] (2) The heat dissipation member is not an extruded product,
The radiating member can be freely designed because it is made of several tens of metal plates or extruding members, and an radiating member having a large surface area that is efficient and has a large surface area can be provided in a predetermined capacity, and the device can be made smaller and lighter. [0036] (3) Since the thermoelectric semiconductor substrate can be brought into direct contact with the heat medium liquid, highly efficient heat conduction, heat absorption, and heat dissipation can be performed. [0037] (4) Even though it is air-cooled, it has a heat dissipation performance comparable to that of water-cooling, so that the entire device is miniaturized and is suitable for most applications. [0038] (5) There is no limit to the installation place unlike the conventional water-cooled radiator. [0039] According to the present invention, as described above, the radiator is divided into the heat absorbing member and the heat radiating member, and the indirect absorption of heat from the thermoelectric semiconductor substrate or the heat radiation is performed by water or the like. By bringing the thermoelectric semiconductor substrate into direct contact with the heat transfer liquid, the efficiency is significantly improved due to the synergistic effect. [0040] Needless to say, the present invention can be applied to various applications of conventional thermoelectric semiconductors and new applications. Practical application has been delayed due to low cooling capacity, high cost, etc.
This thermoelectric semiconductor device can be applied with equal or higher performance to various types of compression type devices using a chlorofluorocarbon refrigerant, particularly for air conditioning and heating, home appliances, vending machines and the like. [0041] Further, thanks to the synergistic effect, the efficiency is significantly increased to 50% to 100% of the conventional air-cooled radiator. It is efficient in the Peltier effect, but does not use bismuth tellurium, which has less resources, a combination of other materials, that is, materials with slightly lower performance but rich resources, such as silicon-germanium series, selenium compounds, and iron silicides. , Others can be used. [0042] In the above description, the heat-absorbing member-the heat-dissipating member has been described, but naturally the reverse usage method may also be used. Further, the device of the present invention may be attached to both sides of the thermoelectric semiconductor substrate, or a conventional radiator (heat sink) may be attached to one side. The heat transfer liquid is not limited to water. The known heat exchanger is not limited to the embodiment and may be any heat exchanger. [0043]

BRIEF DESCRIPTION OF THE DRAWINGS [0044] [FIG. 1] FIG. 1 is a sectional view showing an example of a conventional radiator (heat sink). [0045] [FIG. 2] FIG. 2 shows a conventional heat absorber.
(B) is a cross-sectional view and (c) is a plan view of (b). [0046] [FIG. 3] FIG. 3 is a plan view in which a part of a conventional heat exchanger is cut away. [0046] [FIG. 4] FIG. 4 is a side view showing a specific example of the heat absorbing member and the heat radiating member of the present invention. [0047] [FIG. 5] FIG. 5 is a perspective view showing a specific example of the heat absorbing member and the heat radiating member of the present invention. [0048] [FIG. 6] FIG. 4 is an explanatory view for explaining a mounting mode when the thermoelectric semiconductor substrate is mounted on the heat absorbing member in the present invention. [0049] [Explanation of symbols] 1. Aluminum plate 2. Pipe [0050] 3. Thermoelectric semiconductor 4. Ceramic substrate 5. Radiator 6. Heat dissipation side ceramics substrate 7. Heat absorbing member 8. Hole 9. Elbow 10. Heat dissipation member 11. Pipe [0051] 12. Heat absorbing member 13. Heat dissipation member 14. Pipe 15. Pump 16. Thermoelectric semiconductor [0052] 17. Heat absorbing member 18. Thermoelectric semiconductor substrate 19. Hole 20. Partition 21. pump

Claims (1)

Claims: [Claim 1] In a radiator used in combination with a thermoelectric semiconductor utilizing the Peltier effect, the heat absorbing member and the heat radiating member are arranged in a structure in which they can be transferred in a heat-transferable manner. A heat dissipation device characterized by the above. [Claim 2] The heat dissipation device according to claim 1, wherein the heat absorbing member and the heat radiating member are connected by a pipe, and the heat transfer liquid moves in the pipe. [Claim 3] The heat dissipation device according to claim 1 or 2, wherein the moving heat medium liquid circulates between the heat absorbing member and the heat radiating member in a closed circuit. [Claim 4] The heat dissipation device according to any one of claims 1 to 3, wherein the heat medium liquid is forcibly circulated by a pump or the like. [Claim 5] A heat dissipation device characterized in that the heat absorbing member and the heat radiating member are at least partially connected to each other. [Claim 6] The above-mentioned heat absorbing member and heat radiating member are further forcedly cooled by forced draft.
~ The heat dissipation device according to claim 4. [Claim 7] The heat dissipation device according to any one of claims 1 to 6, wherein the substrate of the thermoelectric semiconductor attached to the heat absorbing member is in direct contact with the heat medium liquid. [Claim 8] A heat dissipation device, characterized in that the heat absorbing member in which the substrate of the thermoelectric semiconductor is brought into direct contact with water is used as a water cooling type radiator. [Claim 9] The heat dissipation device according to any one of claims 1 to 8, wherein the substrate of the thermoelectric semiconductor attached to the heat absorbing member is circular.