JPH0629196A - Ｘ線パターン描画用マスク - Google Patents

Ｘ線パターン描画用マスク

Info

Publication number
JPH0629196A
JPH0629196A JP7490593A JP7490593A JPH0629196A JP H0629196 A JPH0629196 A JP H0629196A JP 7490593 A JP7490593 A JP 7490593A JP 7490593 A JP7490593 A JP 7490593A JP H0629196 A JPH0629196 A JP H0629196A
Authority
JP
Japan
Prior art keywords
mask
layer
fabrication
repair
patterned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7490593A
Other languages
English (en)
Japanese (ja)
Inventor
Donald M Tennant
エム．テナント ドナルド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of JPH0629196A publication Critical patent/JPH0629196A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • H10P76/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP7490593A 1992-04-03 1993-04-01 Ｘ線パターン描画用マスク Pending JPH0629196A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US862684 1992-04-03
US07/862,684 US5304437A (en) 1992-04-03 1992-04-03 Mask for x-ray pattern delineation

Publications (1)

Publication Number Publication Date
JPH0629196A true JPH0629196A (ja) 1994-02-04

Family

ID=25339054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7490593A Pending JPH0629196A (ja) 1992-04-03 1993-04-01 Ｘ線パターン描画用マスク

Country Status (8)

Country Link
US (1) US5304437A (enExample)
EP (1) EP0569123B1 (enExample)
JP (1) JPH0629196A (enExample)
KR (1) KR930022468A (enExample)
CA (1) CA2090157C (enExample)
DE (1) DE69307768T2 (enExample)
HK (1) HK118697A (enExample)
TW (1) TW234210B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1393775A1 (en) 2002-08-28 2004-03-03 Hitachi, Ltd. Ultrasonic apparatus for therapeutic use
US7074427B2 (en) 2002-01-30 2006-07-11 Hitachi, Ltd. Medicine, carrier for medicine, method of producing medicine, and method of tumor treatment
JP2009519594A (ja) * 2005-12-13 2009-05-14 コミシリア ア レネルジ アトミック 反射リソグラフィーマスクの製造方法および前記方法により得られるマスク
KR20170044443A (ko) * 2015-10-15 2017-04-25 삼성전자주식회사 반사형 포토마스크 및 그 제조 방법

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6015640A (en) * 1998-03-26 2000-01-18 Euv Llc Mask fabrication process
US6277539B1 (en) * 1998-05-22 2001-08-21 The United States Of America As Represented By The United States Department Of Energy Enhanced adhesion for LIGA microfabrication by using a buffer layer
JP3770542B2 (ja) 1999-07-22 2006-04-26 コーニング インコーポレイテッド 遠紫外軟ｘ線投影リソグラフィー法およびマスク装置
US6776006B2 (en) 2000-10-13 2004-08-17 Corning Incorporated Method to avoid striae in EUV lithography mirrors
US6818357B2 (en) * 2001-10-03 2004-11-16 Intel Corporation Photolithographic mask fabrication
DE10155112B4 (de) * 2001-11-09 2006-02-02 Infineon Technologies Ag Reflexionsmaske für die EUV-Lithographie und Herstellungsverfahren dafür
JP3939167B2 (ja) * 2002-02-28 2007-07-04 Ｈｏｙａ株式会社 露光用反射型マスクブランク、その製造方法及び露光用反射型マスク
DE10223113B4 (de) * 2002-05-21 2007-09-13 Infineon Technologies Ag Verfahren zur Herstellung einer photolithographischen Maske
US7959817B2 (en) 2004-01-09 2011-06-14 Masonite Corporation Door skin, a method of etching a plate, and an etched plate formed therefrom
US6988342B2 (en) 2003-01-17 2006-01-24 Masonite Corporation Door skin, a method of etching a plate for forming a wood grain pattern in the door skin, and an etched plate formed therefrom
JP4694150B2 (ja) * 2003-06-20 2011-06-08 東京エレクトロン株式会社 処理方法及び処理システム
US20230280644A1 (en) * 2022-03-03 2023-09-07 International Business Machines Corporation Method of making euv mask with an absorber layer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673018A (en) * 1969-05-08 1972-06-27 Rca Corp Method of fabrication of photomasks
EP0279670B1 (en) * 1987-02-18 1997-10-29 Canon Kabushiki Kaisha A reflection type mask
DE3884970T2 (de) * 1987-10-09 1994-04-21 Hughes Aircraft Co Monolitische tunnelmaske mit einer amorphen/einkristallinen struktur.
US4906326A (en) * 1988-03-25 1990-03-06 Canon Kabushiki Kaisha Mask repair system

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7074427B2 (en) 2002-01-30 2006-07-11 Hitachi, Ltd. Medicine, carrier for medicine, method of producing medicine, and method of tumor treatment
EP1393775A1 (en) 2002-08-28 2004-03-03 Hitachi, Ltd. Ultrasonic apparatus for therapeutic use
JP2009519594A (ja) * 2005-12-13 2009-05-14 コミシリア ア レネルジ アトミック 反射リソグラフィーマスクの製造方法および前記方法により得られるマスク
KR20170044443A (ko) * 2015-10-15 2017-04-25 삼성전자주식회사 반사형 포토마스크 및 그 제조 방법

Also Published As

Publication number Publication date
HK118697A (en) 1997-09-05
EP0569123A3 (en) 1994-08-24
US5304437A (en) 1994-04-19
TW234210B (enExample) 1994-11-11
DE69307768D1 (de) 1997-03-13
CA2090157A1 (en) 1993-10-04
KR930022468A (ko) 1993-11-24
DE69307768T2 (de) 1997-05-28
CA2090157C (en) 1996-07-30
EP0569123A2 (en) 1993-11-10
EP0569123B1 (en) 1997-01-29

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Legal Events

Date Code Title Description
A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20020605