JPH06283619A - High-frequency circuit element and its manufacture - Google Patents
High-frequency circuit element and its manufactureInfo
- Publication number
- JPH06283619A JPH06283619A JP7227993A JP7227993A JPH06283619A JP H06283619 A JPH06283619 A JP H06283619A JP 7227993 A JP7227993 A JP 7227993A JP 7227993 A JP7227993 A JP 7227993A JP H06283619 A JPH06283619 A JP H06283619A
- Authority
- JP
- Japan
- Prior art keywords
- surface acoustic
- acoustic wave
- frequency circuit
- substrate
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、高周波回路に使用され
る高周波回路素子およびその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency circuit element used in a high frequency circuit and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】近年、携帯電話、ＭＣＡ(Multi Channel
Access)無線等の数百ＭＨｚから数ＧＨｚの高周波域で
使用する移動体無線の普及に伴い、無線機器には小型軽
量化が求められており、必然的にこれら無線機器に用い
られる部品にも小型軽量化が望まれている。とくに高周
波域の信号を扱う高周波増幅回路やフィルタは、通常の
信号処理に用いられるＬＳＩ等に比べて小型軽量化が進
んでいるとはいえず、現在、このような高周波域で使用
される部品の小型軽量化が強く求められているところで
ある。2. Description of the Related Art In recent years, mobile phones, MCA (Multi Channel)
Access) With the spread of mobile radios used in a high frequency range of several hundred MHz to several GHz, wireless devices are required to be small and lightweight, and inevitably also for components used in these wireless devices. It is desired to reduce the size and weight. In particular, it cannot be said that the high-frequency amplifier circuits and filters that handle signals in the high-frequency range are smaller and lighter than LSIs used for normal signal processing, and currently, parts used in such high-frequency ranges are used. There is a strong demand for smaller size and lighter weight.
【０００３】その中でも圧電体を利用した弾性表面波素
子が、これまで用いられてきた同軸フィルタやヘリカル
フィルタ等に比べ小型軽量にフィルタ素子を構成するこ
とができるため、高周波用途部品の小型軽量化を進める
上で注目を集めている。この弾性表面波素子について
は、これをフィルタ単体として作製するのではなく、一
部に高周波増幅素子が形成された半導体基板上の他の一
部に窒化アルミニウム等の圧電体薄膜を成膜し弾性表面
波素子を形成した高周波集積回路素子が提唱されている
（たとえばTsubouchi K;IEEETrans.Sonics.Ultrason Vo
l.32, No.5, P634(1985)) 。Among them, the surface acoustic wave element using the piezoelectric body can be made smaller and lighter than the coaxial filter and the helical filter which have been used up to now, so that the high frequency component can be made smaller and lighter. Is attracting attention as it advances. This surface acoustic wave element is not manufactured as a single filter, but is formed by forming a piezoelectric thin film such as aluminum nitride on another part of the semiconductor substrate on which the high frequency amplification element is formed and forming an elastic film. A high frequency integrated circuit device formed with a surface acoustic wave device has been proposed (for example, Tsubouchi K; IEEE Trans.Sonics.Ultrason Vo.
L.32, No.5, P634 (1985)).
【０００４】しかし、このように高周波増幅素子と弾性
表面波素子とを同一基板上に設けた場合には、弾性表面
波素子からの弾性表面波が基板上の高周波増幅素子等の
周辺素子に伝わって干渉し、回路としての特性を劣化さ
せるという問題があり、集積度を上げるうえでその解決
が望まれている。However, when the high frequency amplifying element and the surface acoustic wave element are thus provided on the same substrate, the surface acoustic wave from the surface acoustic wave element is transmitted to the peripheral elements such as the high frequency amplifying element on the substrate. However, there is a problem in that the characteristics of the circuit are deteriorated due to the interference with each other, and a solution thereof is desired in order to increase the degree of integration.
【０００５】従来、こうした、同一基板上に高周波増幅
素子と弾性表面波素子とを形成したときの弾性表面波の
伝搬による同一基板上の他の素子への影響を防止するた
めの方策として、たとえば、弾性表面波素子を形成する
圧電体薄膜の周囲に溝や穴を形成して弾性表面波を散乱
させたり、あるいは吸収材によって弾性表面波を吸収さ
せること等が提案されている（実公昭５７−５０８１３
号公報、特開平２−２５１０４号公報、特開平３−１４
５３２０号公報）。Conventionally, as a measure for preventing the influence of surface acoustic wave propagation on other elements on the same substrate when the high frequency amplification element and the surface acoustic wave element are formed on the same substrate, for example, It has been proposed to form a groove or a hole around a piezoelectric thin film forming a surface acoustic wave element to scatter the surface acoustic wave, or to absorb the surface acoustic wave with an absorbing material. 50813
Japanese Patent Laid-Open No. 2-25104, Japanese Patent Laid-Open No. 3-14
5320).
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、弾性表
面波を溝または穴などで散乱させた場合には、弾性表面
波が他の素子に及ぼす影響が必ずしもなくなるわけでは
なく、散乱弾性表面波と他の素子との間の干渉のおそれ
は依然として存在する。また、吸収材を用いる方法で
は、ふつう吸収材として主に油脂等を用いるので、半導
体基板汚染の原因になりやすい。半導体素子を作製する
ときには汚染は極力避けるべきであり、油脂等の吸収材
を用いないで干渉を防止することが望まれる。さらに、
溝や穴を形成する方法にせよ吸収材を塗布する方法にせ
よどちらもそのための専用の工程が必要であり、製造工
数の増加は避けられない。しかも、これらの方法では、
電磁的な相互干渉、すなわち、弾性表面波素子から放射
される電磁波による基板上の他の素子への影響は何ら解
決されていない。However, when a surface acoustic wave is scattered by a groove or a hole, the influence of the surface acoustic wave on other elements does not always disappear, and the scattered surface acoustic wave and other There is still the risk of interference with the elements of. Further, in the method using the absorbent material, since oil or the like is usually used as the absorbent material, it is likely to cause contamination of the semiconductor substrate. Contamination should be avoided as much as possible when manufacturing a semiconductor element, and it is desirable to prevent interference without using an absorbent such as oil and fat. further,
Whether a method of forming a groove or a hole or a method of applying an absorber, a dedicated process for that purpose is required, and an increase in manufacturing man-hours cannot be avoided. And with these methods,
Mutual electromagnetic interference, that is, the influence of electromagnetic waves emitted from the surface acoustic wave element on other elements on the substrate has not been solved yet.
【０００７】本発明は、このような従来技術の問題点に
鑑みてなされたものであり、製造工数を増加させること
なく弾性表面波の不要な干渉ないし電磁的な干渉を防止
することができる高周波回路素子およびその製造方法を
提供することを目的とする。The present invention has been made in view of the above problems of the prior art, and a high frequency capable of preventing unnecessary interference of surface acoustic waves or electromagnetic interference without increasing the number of manufacturing steps. An object is to provide a circuit element and a method for manufacturing the same.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
の本発明は、同一基板の表面に少なくとも一つの弾性表
面波素子を含む複合素子が形成され、かつ前記基板表面
が弾性表面波吸収材により前記弾性表面波素子の部分が
中空となるように被覆されていることを特徴とする。In order to achieve the above object, the present invention provides a composite element including at least one surface acoustic wave element on the surface of the same substrate, and the surface of the substrate is a surface acoustic wave absorber. The surface acoustic wave element is covered by the above so as to be hollow.
【０００９】また、本発明は、同一基板の表面に少なく
とも一つの弾性表面波素子を含む複合素子が形成され、
かつ、前記基板表面が導電性の弾性表面波吸収材により
前記弾性表面波素子の部分が中空となるように被覆され
ていることを特徴とする。Further, according to the present invention, a composite element including at least one surface acoustic wave element is formed on the surface of the same substrate,
The surface of the substrate is coated with a conductive surface acoustic wave absorber so that the surface acoustic wave element is hollow.
【００１０】さらに、本発明は、同一基板の表面に形成
された少なくとも一つの弾性表面波素子を含む複合素子
のうち前記弾性表面波素子の部分に中空形成用物質を塗
布する工程と、前記基板表面を多孔質の弾性表面波吸収
材で被覆する工程と、前記中空形成用物質を加熱して気
化させる工程とを有することを特徴とする。Further, the present invention comprises a step of applying a hollow forming material to the surface acoustic wave element portion of a composite element including at least one surface acoustic wave element formed on the surface of the same substrate, and the substrate. The method is characterized by including a step of coating the surface with a porous surface acoustic wave absorber and a step of heating and vaporizing the hollow forming substance.
【００１１】また、本発明は、同一基板の表面に形成さ
れた少なくとも一つの弾性表面波素子を含む複合素子の
うち前記弾性表面波素子の部分に中空形成用物質を塗布
する工程と、前記基板表面を多孔質の導電性弾性表面波
吸収材で被覆する工程と、前記中空形成用物質を加熱し
て気化させる工程とを有することを特徴とする。The present invention also provides a step of applying a hollow forming material to a portion of the surface acoustic wave element of a composite element including at least one surface acoustic wave element formed on the surface of the same substrate, and the substrate. The method is characterized by including a step of coating the surface with a porous conductive surface acoustic wave absorber and a step of heating and vaporizing the hollow forming substance.
【００１２】[0012]
【作用】このように構成された本発明にあっては、基板
表面が弾性表面波吸収材により弾性表面波素子の部分の
みが中空となるように被覆された構造をしているため、
物体の表面を伝搬する弾性表面波は弾性表面波素子が設
けられた中空の部分においてのみ伝搬し、不要な弾性表
面波は弾性表面波吸収材によって吸収され減衰する。し
たがって、弾性表面波は弾性表面波吸収材で覆われた他
の素子（たとえば高周波増幅素子など）には伝搬せず、
干渉が防止される。In the present invention thus constituted, since the surface of the substrate is covered with the surface acoustic wave absorber so that only the surface acoustic wave element is hollow,
The surface acoustic wave propagating on the surface of the object propagates only in the hollow portion where the surface acoustic wave element is provided, and unnecessary surface acoustic waves are absorbed and attenuated by the surface acoustic wave absorber. Therefore, the surface acoustic wave does not propagate to other elements covered with the surface acoustic wave absorbing material (for example, high frequency amplifying element),
Interference is prevented.
【００１３】また、本発明では、弾性表面波吸収材は導
電性の材料で構成されているため、弾性表面波素子から
放射された電磁波もまた弾性表面波吸収材で吸収減衰さ
れ、基板上の他の素子に影響を与えたり外部へ放出され
るのが防止される。Further, in the present invention, since the surface acoustic wave absorbing material is made of a conductive material, the electromagnetic wave radiated from the surface acoustic wave element is also absorbed and attenuated by the surface acoustic wave absorbing material, and the surface acoustic wave absorbing material It is prevented that other elements are affected or emitted to the outside.
【００１４】さらに、本発明では、基板表面を弾性表面
波吸収材で被覆してパッケージをも兼ねるようにしたの
で、上記した弾性表面波の不要な干渉の防止と回路素子
のパッケージングとを同一の工程で実施することがで
き、製造工数の増加はない。Further, according to the present invention, the surface of the substrate is covered with the surface acoustic wave absorbing material so that it also serves as a package. Therefore, the prevention of unnecessary interference of the surface acoustic wave and the packaging of the circuit element are the same. Can be carried out in the above process, and there is no increase in manufacturing man-hours.
【００１５】[0015]
【実施例】以下、本発明を添付した図面を参照しながら
説明する。なお、図中、同じ部材には同一の付号を付し
てある。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the accompanying drawings. In the drawings, the same members are designated by the same reference numerals.
【００１６】図１は、本発明の一実施例による高周波回
路素子の構造を示す断面図である。この高周波回路素子
は、シリコン基板１の一部に成膜された図示しない圧電
体薄膜に弾性表面波素子２が作製され、同じくシリコン
基板１の他の部分に成膜された図示しない半導体薄膜に
高周波増幅素子３が作製されている。そして、これら弾
性表面波素子２や高周波増幅素子３等からなる複合素子
が作製されたシリコン基板１の表面には、弾性表面波素
子２の部分に中空４が形成されるよう、弾性表面波を吸
収する物質からなる弾性表面波吸収材としての多孔質樹
脂５が被覆されている。この多孔質樹脂５は高周波回路
素子のパッケージをも兼ねている。なお、シリコン基板
１上の各種素子２，３は、上記のようにシリコン基板１
上に成膜された薄膜の上に作製されたものに限定される
ことなく、シリコン基板１上に直接通常に作製されたも
のであっても良いことはもちろんである。FIG. 1 is a sectional view showing the structure of a high frequency circuit device according to an embodiment of the present invention. In this high frequency circuit element, a surface acoustic wave element 2 is formed on a piezoelectric thin film (not shown) formed on a part of a silicon substrate 1, and a semiconductor thin film (not shown) formed on another part of the silicon substrate 1 is also formed. The high frequency amplification element 3 is manufactured. Then, on the surface of the silicon substrate 1 on which the composite element including the surface acoustic wave element 2 and the high frequency amplifying element 3 is manufactured, the surface acoustic wave is generated so that the hollow 4 is formed in the surface acoustic wave element 2. A porous resin 5 as a surface acoustic wave absorber made of an absorbing substance is coated. The porous resin 5 also serves as a package for the high frequency circuit element. In addition, the various elements 2 and 3 on the silicon substrate 1 are
It is needless to say that it is not limited to a film formed on the thin film formed above, and may be a film normally formed directly on the silicon substrate 1.
【００１７】このように、この高周波回路素子は樹脂封
止のパッケージがなされた構造をしているとともに、パ
ッケージを構成する多孔質樹脂５には弾性表面波素子２
の部分に中空４が形成されているため、弾性表面波素子
２の機能を何ら阻害することなく、他の素子３との間に
おける弾性表面波の不要な干渉が防止される。すなわ
ち、物体表面でないと伝搬しない弾性表面波は弾性表面
波素子２が設けられている中空の部分４においてのみ伝
搬し、その一方で、不要な弾性表面波は多孔質樹脂５に
よって吸収減衰されるので、高周波増幅素子３等の他の
素子には伝搬しない。したがって、干渉が防止され、弾
性表面波の伝搬による基板１上の他の素子３への影響が
防止される。As described above, this high-frequency circuit element has a resin-sealed package structure, and the surface acoustic wave element 2 is provided in the porous resin 5 forming the package.
Since the hollow 4 is formed in the area of, the unnecessary interference of the surface acoustic wave with other elements 3 is prevented without impeding the function of the surface acoustic wave element 2. That is, the surface acoustic wave that does not propagate unless it is the surface of the object propagates only in the hollow portion 4 where the surface acoustic wave element 2 is provided, while unnecessary surface acoustic waves are absorbed and attenuated by the porous resin 5. Therefore, it does not propagate to other elements such as the high frequency amplification element 3. Therefore, interference is prevented and the influence of the propagation of the surface acoustic wave on the other elements 3 on the substrate 1 is prevented.
【００１８】図２は、本発明の他の実施例による高周波
回路素子の構造を示す断面図であって、図１に示す多孔
質樹脂５に導電性を持たせた場合を示している。つま
り、図２の多孔質樹脂５ａは弾性表面波に加えて電磁波
を吸収する物質から形成されている。これ以外の部材に
ついては図１と同じであるからその説明は省略する。FIG. 2 is a sectional view showing the structure of a high frequency circuit device according to another embodiment of the present invention, showing a case where the porous resin 5 shown in FIG. 1 is made conductive. That is, the porous resin 5a in FIG. 2 is formed of a substance that absorbs electromagnetic waves in addition to surface acoustic waves. Since the other members are the same as those in FIG. 1, the description thereof will be omitted.
【００１９】この場合、多孔質樹脂５ａには導電性が付
与されているため、弾性表面波の吸収に加えて、弾性表
面波素子２から放射される電磁波もまたこの多孔質樹脂
５ａにより吸収減衰される。したがって、弾性表面波素
子２からの電磁波が基板１上の他の素子３に影響を与え
たり、パッケージ外へ放射されることがなくなる。In this case, since conductivity is imparted to the porous resin 5a, in addition to absorption of surface acoustic waves, electromagnetic waves emitted from the surface acoustic wave element 2 are also absorbed and attenuated by the porous resin 5a. To be done. Therefore, the electromagnetic wave from the surface acoustic wave element 2 does not affect the other elements 3 on the substrate 1 or radiate outside the package.
【００２０】図１と図２の高周波回路素子において、弾
性表面波素子２が作製される前記圧電体薄膜は、たとえ
ば窒化アルミニウム、酸化亜鉛、タンタル酸リチウム、
チタン酸ジルコン酸鉛等をスパッタ法またはＣＶＤ法に
より成膜したものであり、高周波増幅素子３（たとえば
電子移動度トランジスタ（ＨＥＭＴ）等）等が作製され
る半導体薄膜は、たとえばガリウム砒素等をＣＶＤ法に
より成膜したものである。また、図１の多孔質樹脂５と
しては、たとえばエポキシ樹脂に発泡剤（たとえばフロ
ン）を加えたものを使用する。また、図２の導電性の多
孔質樹脂５ａとしては、たとえばエポキシ樹脂に発泡剤
（たとえばフロン）を加え、これにさらに導電性物質
（たとえば銅の微粒子）を分散させたものを使用する。In the high frequency circuit elements of FIGS. 1 and 2, the piezoelectric thin film on which the surface acoustic wave element 2 is manufactured is, for example, aluminum nitride, zinc oxide, lithium tantalate,
A semiconductor thin film in which lead zirconate titanate or the like is formed by a sputtering method or a CVD method, and a high-frequency amplification element 3 (for example, an electron mobility transistor (HEMT) or the like) is formed is, for example, gallium arsenide or the like. The film is formed by the method. Further, as the porous resin 5 in FIG. 1, for example, epoxy resin to which a foaming agent (for example, CFC) is added is used. Further, as the conductive porous resin 5a in FIG. 2, for example, an epoxy resin to which a foaming agent (for example, CFC) is added, and a conductive substance (for example, copper fine particles) is dispersed therein is used.
【００２１】次に、このような構造の高周波回路素子を
製造する工程について図３を参照しながら説明する。図
３は、図１の高周波回路素子の製造において、一部に中
空を形成してパッケージングを行う方法の一例を説明す
るための工程別断面図である。Next, a process of manufacturing a high frequency circuit device having such a structure will be described with reference to FIG. 3A to 3C are cross-sectional views by process for explaining an example of a method of forming a hollow in a part of the high frequency circuit device of FIG. 1 for packaging.
【００２２】まず、図３（Ａ）に示すように、周知の半
導体製造技術を用いて、シリコン基板１上に弾性表面波
素子２や高周波増幅素子３等からなる複合素子を作製す
る。高周波増幅素子３の表面には、これの表面劣化を防
止するための保護層を形成しておく。この保護層は、た
とえば酸化シリコンや窒化シリコン（Ｓｉ3 Ｎ4 ）をプ
ラズマＣＶＤ法などにより形成する。First, as shown in FIG. 3A, a composite element including a surface acoustic wave element 2 and a high frequency amplification element 3 is manufactured on a silicon substrate 1 by using a well-known semiconductor manufacturing technique. A protective layer is formed on the surface of the high frequency amplification element 3 to prevent the surface from deteriorating. This protective layer is formed of, for example, silicon oxide or silicon nitride (Si 3 N 4 ) by a plasma CVD method or the like.
【００２３】それから、図３（Ｂ）に示すように、弾性
表面波素子２の部分に中空形成用物質６をポッティング
により塗布する。この中空形成用物質６としては、加熱
されると気化しかつ気化するときにかすが残らないよう
な性質のものが要求され、具体的には、たとえば、天井
温度の低いポリアルファメチルスチレン（６９℃）や分
解温度の低いポリイソプチレン、ポリメタクリロニトリ
ル等、またはいく種かのろうを混ぜて上記性質を与えた
ワックス等を使用する。Then, as shown in FIG. 3B, the hollow forming substance 6 is applied to the surface acoustic wave element 2 by potting. The hollow-forming substance 6 is required to have a property of vaporizing when heated and leaving no residue when vaporized. Specifically, for example, polyalphamethylstyrene (69 ° C.) having a low ceiling temperature is required. ) Or low-decomposition temperature polyisobutylene, polymethacrylonitrile or the like, or a wax or the like having the above-mentioned properties by mixing some wax.
【００２４】それから、図３（Ｃ）に示すように、シリ
コン基板１の表面に、エポキシ樹脂にフロン等の発泡剤
を加えてなる多孔質樹脂５をポッティングにより形成し
て、この高周波回路素子を樹脂封止する。この多孔質樹
脂５は、弾性表面波を吸収する吸収材のほか、パッケー
ジをも兼ねている。Then, as shown in FIG. 3C, a porous resin 5 made by adding a foaming agent such as CFC to epoxy resin is formed on the surface of the silicon substrate 1 by potting, and this high-frequency circuit element is manufactured. Seal with resin. The porous resin 5 serves not only as an absorber that absorbs surface acoustic waves but also as a package.
【００２５】それから、図３（Ｄ）に示すように、加熱
炉による熱処理等により中空形成用物質６を加熱して気
化させ、中空４を形成する。気化したガスは多孔質樹脂
５の微細孔を通って外部に放出され、あるいはその微細
孔の中に冷却されて取り込まれる。Then, as shown in FIG. 3D, the hollow-forming substance 6 is heated and vaporized by heat treatment in a heating furnace or the like to form the hollow 4. The vaporized gas is discharged to the outside through the fine pores of the porous resin 5, or is cooled and taken into the fine pores.
【００２６】また、図２の高周波回路素子を製造する場
合には、図３に示した一連の工程のうち（Ａ）（Ｂ）
（Ｄ）の各工程は共通で、（Ｃ）の工程が次のようにな
るだけである。すなわち、シリコン基板１の表面に、エ
ポキシ樹脂にフロン等の発泡剤を加えさらに銅微粒子等
の導電性物質を分散してなる多孔質樹脂５ａをポッティ
ングにより形成して、この高周波回路素子を樹脂封止す
る。この多孔質樹脂５ａは、弾性表面波ならびに電磁波
を吸収する吸収材のほか、パッケージをも兼ねている。In the case of manufacturing the high frequency circuit device of FIG. 2, (A) and (B) of the series of steps shown in FIG.
The steps of (D) are common, and the step of (C) is only as follows. That is, on the surface of the silicon substrate 1, a porous resin 5a made by adding a foaming agent such as CFC to epoxy resin and further dispersing a conductive material such as copper fine particles is formed by potting, and the high frequency circuit element is sealed with a resin. Stop. The porous resin 5a serves not only as an absorber that absorbs surface acoustic waves and electromagnetic waves but also as a package.
【００２７】したがって、このような方法によれば、弾
性表面波素子２や高周波増幅素子３等が同一基板１上に
作製された高周波回路素子において、弾性表面波の不要
な干渉（ならびに電磁波の飛散）を防止するための構造
を提供する工程と、高周波回路素子のパッケージングを
行う工程とを同じ一連の工程で行うことが可能になり、
弾性表面波の干渉防止等のためにそれ専用の工程を設け
る必要がなくなるので、製造工数の増加が抑えられる。Therefore, according to such a method, in a high frequency circuit element in which the surface acoustic wave element 2, the high frequency amplifying element 3 and the like are formed on the same substrate 1, unnecessary interference of the surface acoustic wave (and scattering of electromagnetic waves). It is possible to perform the step of providing a structure for preventing the above) and the step of packaging the high frequency circuit element in the same series of steps,
Since it is not necessary to provide a dedicated process for preventing the interference of surface acoustic waves, an increase in the number of manufacturing steps can be suppressed.
【００２８】[0028]
【発明の効果】以上の説明により明らかなように、本発
明によれば、同一基板上に弾性表面波素子を含む複合素
子が形成された高周波回路素子において、基板表面を弾
性表面波吸収材により弾性表面波素子の部分が中空とな
るように被覆したので、弾性表面波の他の素子への伝搬
による干渉が防止されるようになり、特性を損なうこと
なく集積度を上げることができるようになり、同時に、
これまで弾性表面波素子を使用した高周波回路素子では
困難であった樹脂封止のパッケージも行うことが可能に
なる。As is apparent from the above description, according to the present invention, in a high frequency circuit element in which a composite element including a surface acoustic wave element is formed on the same substrate, the substrate surface is made of a surface acoustic wave absorbing material. Since the surface acoustic wave element is covered so as to be hollow, interference due to the propagation of surface acoustic waves to other elements can be prevented, and the degree of integration can be increased without impairing the characteristics. At the same time,
A resin-sealed package, which has been difficult with a high-frequency circuit element using a surface acoustic wave element, can be provided.
【００２９】また、弾性表面波吸収材に導電性を付加し
た場合には、弾性表面波の他の素子への伝搬による干渉
のほかに電磁波の飛散をも防止されるようになる。When conductivity is added to the surface acoustic wave absorber, scattering of electromagnetic waves can be prevented in addition to interference due to propagation of surface acoustic waves to other elements.
【００３０】そしてその際、本発明によれば、弾性表面
波の不要な干渉の防止とパッケージングとを同一の工程
で行うことができるようになるため、実際上、製造工数
の増加はない。At this time, according to the present invention, the unnecessary interference of surface acoustic waves and the packaging can be performed in the same step, so that the number of manufacturing steps does not increase in practice.
【図１】本発明の一実施例による高周波回路素子の構造
を示す断面図である。FIG. 1 is a sectional view showing the structure of a high-frequency circuit device according to an embodiment of the present invention.
【図２】本発明の他の実施例による高周波回路素子の構
造を示す断面図である。FIG. 2 is a sectional view showing the structure of a high-frequency circuit device according to another embodiment of the present invention.
【図２】図１の高周波回路素子の製造工程の一部を示す
工程別断面図である。FIG. 2 is a sectional view for each step showing a part of the manufacturing step of the high-frequency circuit element of FIG.
１…シリコン基板 ２…弾性表面波素子 ３…高周波増幅素子 ４…中空 ５…多孔質樹脂（弾性表面波吸収材） ５ａ…導電性多孔質樹脂（弾性表面波吸収材） ６…中空形成用物質 DESCRIPTION OF SYMBOLS 1 ... Silicon substrate 2 ... Surface acoustic wave element 3 ... High frequency amplification element 4 ... Hollow 5 ... Porous resin (surface acoustic wave absorber) 5a ... Conductive porous resin (surface acoustic wave absorber) 6 ... Hollow forming substance
【手続補正書】[Procedure amendment]
【提出日】平成５年１０月１９日[Submission date] October 19, 1993
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】図面の簡単な説明[Name of item to be corrected] Brief description of the drawing
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明の一実施例による高周波回路素子の構造
を示す断面図である。FIG. 1 is a sectional view showing the structure of a high-frequency circuit device according to an embodiment of the present invention.
【図２】本発明の他の実施例による高周波回路素子の構
造を示す断面図である。FIG. 2 is a sectional view showing the structure of a high-frequency circuit device according to another embodiment of the present invention.
【図３】図１の高周波回路素子の製造工程の一部を示す
工程別断面図である。FIG. 3 is a sectional view for each step showing a part of the manufacturing step of the high-frequency circuit element of FIG.
【符号の説明】 １…シリコン基板 ２…弾性表面波素子 ３…高周波増幅素子 ４…中空 ５…多孔質樹脂（弾性表面波吸収材） ５ａ…導電性多孔質樹脂（弾性表面波吸収材） ６…中空形成用物質[Explanation of Codes] 1 ... Silicon substrate 2 ... Surface acoustic wave element 3 ... High frequency amplification element 4 ... Hollow 5 ... Porous resin (surface acoustic wave absorber) 5a ... Conductive porous resin (surface acoustic wave absorber) 6 … Hollow forming material
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 23/31 Ｈ０３Ｈ 9/25 Ｄ 7259−5Ｊ Ａ 7259−5Ｊ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI Technical display location H01L 23/31 H03H 9/25 D 7259-5J A 7259-5J
Claims (4)
表面波素子を含む複合素子が形成され、かつ、前記基板
表面が弾性表面波吸収材により前記弾性表面波素子の部
分が中空となるように被覆されていることを特徴とする
高周波回路素子。1. A composite element including at least one surface acoustic wave element is formed on the surface of the same substrate, and the surface of the substrate is made hollow by a surface acoustic wave absorber. A high-frequency circuit element characterized by being covered.
表面波素子を含む複合素子が形成され、かつ、前記基板
表面が導電性の弾性表面波吸収材により前記弾性表面波
素子の部分が中空となるように被覆されていることを特
徴とする高周波回路素子。2. A composite element including at least one surface acoustic wave element is formed on the surface of the same substrate, and the surface of the substrate is made of a conductive surface acoustic wave absorber so that the surface acoustic wave element is hollow. A high-frequency circuit element characterized by being coated so that
一つの弾性表面波素子を含む複合素子のうち前記弾性表
面波素子の部分に中空形成用物質を塗布する工程と、 前記基板表面を多孔質の弾性表面波吸収材で被覆する工
程と、 前記中空形成用物質を加熱して気化させる工程とを有す
ることを特徴とする高周波回路素子の製造方法。3. A step of applying a hollow forming material to a portion of the surface acoustic wave element of a composite element including at least one surface acoustic wave element formed on the surface of the same substrate; 2. A method of manufacturing a high-frequency circuit element, comprising: a step of coating with the surface acoustic wave absorbing material of 1 .; and a step of heating and vaporizing the hollow forming substance.
一つの弾性表面波素子を含む複合素子のうち前記弾性表
面波素子の部分に中空形成用物質を塗布する工程と、 前記基板表面を多孔質の導電性弾性表面波吸収材で被覆
する工程と、 前記中空形成用物質を加熱して気化させる工程とを有す
ることを特徴とする高周波回路素子の製造方法。4. A step of applying a hollow forming material to a portion of the surface acoustic wave element of a composite element including at least one surface acoustic wave element formed on the surface of the same substrate, and the substrate surface being porous. 2. A method for manufacturing a high-frequency circuit element, comprising: a step of coating with the conductive surface acoustic wave absorbing material of 1 .; and a step of heating and vaporizing the hollow forming substance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7227993A JPH06283619A (en) | 1993-03-30 | 1993-03-30 | High-frequency circuit element and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7227993A JPH06283619A (en) | 1993-03-30 | 1993-03-30 | High-frequency circuit element and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06283619A true JPH06283619A (en) | 1994-10-07 |
Family
ID=13484694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7227993A Withdrawn JPH06283619A (en) | 1993-03-30 | 1993-03-30 | High-frequency circuit element and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06283619A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08186189A (en) * | 1994-12-29 | 1996-07-16 | Toray Dow Corning Silicone Co Ltd | Semiconductor device and its manufacture |
| EP0930644A1 (en) * | 1998-01-09 | 1999-07-21 | Nec Corporation | Fabrication method of plastic-packaged semiconductor device |
| US6570469B2 (en) * | 2000-06-27 | 2003-05-27 | Matsushita Electric Industrial Co., Ltd. | Multilayer ceramic device including two ceramic layers with multilayer circuit patterns that can support semiconductor and saw chips |
| WO2003063231A1 (en) * | 2002-01-23 | 2003-07-31 | Matsushita Electric Industrial Co., Ltd. | Package part and method of manufacturing the part |
| JP2006041926A (en) * | 2004-07-27 | 2006-02-09 | Kyocera Corp | Package for housing piezoelectric resonator, and piezoelectric device |
| JP2006041924A (en) * | 2004-07-27 | 2006-02-09 | Kyocera Corp | Package for housing piezoelectric resonator, and piezoelectric device |
| JP2006041928A (en) * | 2004-07-27 | 2006-02-09 | Kyocera Corp | Package for housing piezoelectric resonator, and piezoelectric device |
| JP2006041925A (en) * | 2004-07-27 | 2006-02-09 | Kyocera Corp | Package for housing piezoelectric resonator, and piezoelectric device |
| JP2006041927A (en) * | 2004-07-27 | 2006-02-09 | Kyocera Corp | Package for housing piezoelectric resonator, and piezoelectric device |
| US7476567B2 (en) | 2004-11-22 | 2009-01-13 | Kabushiki Kaisha Toshiba | Midair semiconductor device and manufacturing method of the same |
| JP4530494B2 (en) * | 2000-06-30 | 2010-08-25 | 三菱電機株式会社 | High frequency composite elements |
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-
1993
- 1993-03-30 JP JP7227993A patent/JPH06283619A/en not_active Withdrawn
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08186189A (en) * | 1994-12-29 | 1996-07-16 | Toray Dow Corning Silicone Co Ltd | Semiconductor device and its manufacture |
| EP0930644A1 (en) * | 1998-01-09 | 1999-07-21 | Nec Corporation | Fabrication method of plastic-packaged semiconductor device |
| US5946556A (en) * | 1998-01-09 | 1999-08-31 | Nec Corporation | Fabrication method of plastic-packaged semiconductor device |
| US6570469B2 (en) * | 2000-06-27 | 2003-05-27 | Matsushita Electric Industrial Co., Ltd. | Multilayer ceramic device including two ceramic layers with multilayer circuit patterns that can support semiconductor and saw chips |
| US6784765B2 (en) | 2000-06-27 | 2004-08-31 | Matsushita Electric Industrial Co., Ltd. | Multilayer ceramic device |
| JP4530494B2 (en) * | 2000-06-30 | 2010-08-25 | 三菱電機株式会社 | High frequency composite elements |
| WO2003063231A1 (en) * | 2002-01-23 | 2003-07-31 | Matsushita Electric Industrial Co., Ltd. | Package part and method of manufacturing the part |
| JP2006041924A (en) * | 2004-07-27 | 2006-02-09 | Kyocera Corp | Package for housing piezoelectric resonator, and piezoelectric device |
| JP2006041928A (en) * | 2004-07-27 | 2006-02-09 | Kyocera Corp | Package for housing piezoelectric resonator, and piezoelectric device |
| JP2006041925A (en) * | 2004-07-27 | 2006-02-09 | Kyocera Corp | Package for housing piezoelectric resonator, and piezoelectric device |
| JP2006041927A (en) * | 2004-07-27 | 2006-02-09 | Kyocera Corp | Package for housing piezoelectric resonator, and piezoelectric device |
| JP2006041926A (en) * | 2004-07-27 | 2006-02-09 | Kyocera Corp | Package for housing piezoelectric resonator, and piezoelectric device |
| JP4587727B2 (en) * | 2004-07-27 | 2010-11-24 | 京セラ株式会社 | Piezoelectric vibrator storage package and piezoelectric device |
| JP4587726B2 (en) * | 2004-07-27 | 2010-11-24 | 京セラ株式会社 | Piezoelectric vibrator storage package and piezoelectric device |
| JP4587728B2 (en) * | 2004-07-27 | 2010-11-24 | 京セラ株式会社 | Piezoelectric vibrator storage package and piezoelectric device |
| JP4587730B2 (en) * | 2004-07-27 | 2010-11-24 | 京セラ株式会社 | Piezoelectric vibrator storage package and piezoelectric device |
| JP4587729B2 (en) * | 2004-07-27 | 2010-11-24 | 京セラ株式会社 | Piezoelectric vibrator storage package and piezoelectric device |
| US7476567B2 (en) | 2004-11-22 | 2009-01-13 | Kabushiki Kaisha Toshiba | Midair semiconductor device and manufacturing method of the same |
| JP2020004842A (en) * | 2018-06-28 | 2020-01-09 | 日亜化学工業株式会社 | Light-emitting device and method of manufacturing the same |
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