JPH06283413A - Treatment device - Google Patents

Abstract

PURPOSE:To realize the reduced consumption of treatment liquid, the miniaturization of treatment device and easy handling and maintenance thereof. CONSTITUTION:A container 12 is formed by integrally jointing a pair of rectangular plate bodies 20 and 22 with bolts 24 and it has such a groove-shaped treatment chamber 26 that a semiconductor wafer W to be treated may be inserted between the inner side faces of the bodies 20 and 22. The upper end part of the container 12 is open and a board inlet 26a to insert/take out the wafer W into/from the chamber 26. The wafer W is inserted/took out into/from the chamber 26 by a pincette 28. A developing liquid, a rinsing liquid and an N2 gas are lead into the inside of the treatment chamber 26 from a lead-in port of the upper part of the chamber 26 via a passage in the container from a port of the bottom of the container. Respective fluids in the chamber 26 are discharged to the outside through a main exhaust passage and a main discharged port from a main discharged outlet provided on the lower part of the chamber 26.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus for dipping at least a surface to be processed of a substrate in a processing liquid to perform a predetermined processing.

[0002]

2. Description of the Related Art In a photolithography process for manufacturing a semiconductor device, a photoresist is applied to the surface of a semiconductor wafer (resist applying process), a mask pattern is printed on the resist (exposure process), and then a photosensitive portion of the resist or The photosensitive portion is selectively dissolved in a developing solution (developing step) to form a resist pattern on the wafer surface. Conventionally, in this type of developing process, a spray method in which a developing solution is sprayed onto the wafer surface from a nozzle while rotating a semiconductor wafer by a spinner mechanism, a dipping method in which the wafer is immersed in a processing tank storing the developing solution, and a wafer There is used a paddle method or the like in which the developer is placed in a horizontal state and the developer is placed on the surface with surface tension.

[0003]

However, all of the above-mentioned conventional developing methods have a problem that the developer is wasted and the developer is consumed in a large amount. It goes without saying that the spray method and the dip method consume a large amount, but the paddle method also requires that the developer be deposited in a thickness (amount) more than necessary in relation to the surface tension.
Furthermore, if the developing solution is uniformly spread on the wafer, the developing solution is forced to spill out from the outer edge of the wafer, so that the consumption of the developing solution is not small. Further, in any of these conventional methods, since the contact area between the developing solution during processing, that is, the developing solution on the wafer or in the processing tank and the ambient air is large, the developing solution is easily deteriorated,
There is also the problem that temperature adjustment is difficult.

Further, individually, in the spray method, it is troublesome to position the wafer on the spinner mechanism.
Since the developing solution is scattered from the rotating wafer, there is a problem that a cup must be provided around the wafer, the spinner mechanism and the cup make the apparatus large and complicated, and maintenance is troublesome. The dipping method has a problem in that the wafer must be lifted from the processing tank after development and moved to another location for rinsing, and the developing step and the rinsing step cannot be continuously performed at one location. The paddle method has a disadvantage that it takes a considerable time to bring the surface of the wafer into contact with the developing solution evenly.

The present invention solves the above-mentioned problems of the prior art, and is a processing apparatus for immersing at least the surface to be processed of a substrate in a processing solution to perform a predetermined processing, and to save the consumption of the developing solution. The purpose is to provide a measuring device.

Another object of the present invention is to provide a processing apparatus which dips at least the surface to be processed of a substrate in a processing liquid and performs a predetermined processing, which realizes downsizing of the apparatus and is easy to operate and maintain. To provide.

Another object of the present invention is to provide a processing apparatus for immersing at least the surface to be processed of a substrate in a processing liquid to perform a predetermined processing, and capable of rapidly performing a series of processing in the same processing chamber. Especially.

Another object of the present invention is a processing apparatus for immersing at least the surface to be processed of a substrate in a processing liquid to perform a predetermined processing, and a simple and highly accurate temperature for the processing liquid and the substrate being processed. It is to provide a device capable of controlling.

[0009]

In order to achieve the above object, the first processing apparatus of the present invention comprises a processing chamber having a space slightly larger than the outer shape of the substrate to be processed, and the processing chamber. A substrate loading / unloading port for loading the substrate into the processing chamber and unloading the substrate from the processing chamber, a processing liquid introducing port for introducing a processing liquid into the processing chamber, and discharging the processing liquid from the processing chamber. And a processing liquid supply means for supplying the processing liquid into the processing chamber through the processing liquid introducing port, and a negative pressure suction force for the processing liquid into the processing chamber. And a negative pressure suction means for discharging the processing liquid from the processing chamber through the discharge port with a negative pressure suction force.

In the second processing apparatus of the present invention, a processing chamber having a space slightly larger than the outer shape of the substrate to be processed, the substrate is put into the processing chamber, and the substrate is taken out of the processing chamber. Substrate entrance and exit for processing and 1 in the processing chamber
One or a plurality of treatment liquid inlets for introducing a kind or two or more kinds of treatment liquids, and one or a plurality of gas inlets for introducing one or more kinds of gases into the treatment chamber. A container having an outlet for discharging the treatment liquid or the cleaning liquid or the gas from the treatment chamber, and a treatment for supplying the treatment liquid into the treatment chamber through the treatment liquid inlet Liquid supply means, gas supply means for supplying the gas into the processing chamber through the gas inlet, and introducing the processing liquid or the gas into the processing chamber with a negative pressure suction force, A negative pressure suction means for discharging the processing liquid or the gas from the processing chamber via the discharge port with a negative pressure suction force is provided.

[0011]

In the processing apparatus of the present invention, the processing container is of a jacket type, and the substrate and the processing liquid are housed together in the groove-shaped processing chamber provided in the processing container. Since the treatment liquid is introduced into the treatment chamber at a negative pressure, the treatment liquid quickly spreads in a thin film around at least the surface to be treated of the substrate. In this way, at least the surface of the substrate to be processed comes into contact with the processing liquid in the processing chamber, whereby a predetermined processing is performed. When the processing liquid is discharged from the processing chamber after the processing, the processing liquid is quickly discharged from the discharge port by the negative pressure suction force.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor wafer developing apparatus according to an embodiment of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 is a perspective view showing the external structure of the semiconductor wafer developing apparatus in this embodiment. As shown in the figure, this semiconductor wafer developing apparatus has a jacket type container main body 12 housed in a relatively flat box type water leakage receiving tank 10 having an open top surface. Container body 12
The tank 10 so that the flange 12a on the upper surface side thereof is placed on the flange 10a on the upper surface side portion of the tank 10.
It is loaded inside and is detachably attached to the tank 10 by a bolt 14 screwed between the flanges 12a and 10a. On the lower surface of the tank 10, a pipe connection portion 16 for connecting various fluid supply or discharge pipes to various fluid ports of the container body 12, and a drain pipe 18 for discharging water leaked from the bottom of the tank 10. And are attached. When the container 14 is loosened and the container body 12 is pulled upward (in the direction of arrow B), the container body 1 is
2 can be taken out of the tank 10. The shape and size of the container body 12 are formed to be slightly smaller than the inner shape of the tank 10, and are configured to have an interval through which water can flow.

FIG. 2 is a perspective view showing the external shape of the container body 12. As shown in the figure, the container body 12 is made of a material having resistance to a developing solution, which is a processing solution, such as stainless steel or resin, and a pair of rectangular plate bodies 20 and 22 are face-to-face with each other and integrated with a bolt 24. It has a groove-shaped processing chamber 26 in which the semiconductor wafer W to be processed is inserted between the inner side surfaces of the plate bodies 20 and 22. The upper end of the container body 12 is opened, and serves as a substrate inlet / outlet port 26 a for loading / unloading the semiconductor wafer W into / from the processing chamber 26. The semiconductor wafer W is loaded / unloaded into / from the processing chamber 26 by tweezers 28 of a wafer transfer device (not shown) installed in the present semiconductor wafer developing device. The tweezers 28 insert the semiconductor wafer W into the processing chamber 26 or remove it from the processing chamber 26 while sucking and holding the outer peripheral edge of the back surface of the semiconductor wafer W. A recess 30 for guiding the tweezers 28 into the processing chamber 26 is provided in the upper portion of the inner side surface of the container plate body 22. A lid 32 of a temperature control mechanism built in the container body 12 is detachably attached to the outer surface of the container plate body 20 by a bolt 34.

FIG. 3 is an exploded perspective view showing the internal structure of the container body 12 in detail, and FIG. 4 is an exploded perspective view showing a fluid passage in the container body 12.

As shown in FIG. 3, a groove or recess 36 having a width slightly larger than the diameter of the semiconductor wafer W and a semi-circular lower end is formed on the inner side surface of the container plate 22. The U-shaped O-ring 3 is provided outside the recess 36.
A U-shaped groove 40 for inserting 8 is formed.
Through holes 41 through which the bolts 24 from the container plate 20 side are passed to the nut 39 side are formed at regular intervals outside the groove 40.

A concave portion 30 for guiding the tweezers 28 into the processing chamber 26 is provided at the center of the upper portion of the wall surface of the concave portion 36, and extends inside the concave portion 30 and both sides thereof, that is, from the left end portion to the right end portion of the wall surface. A large number of small holes 42, 44, 46 are provided in a row at three rows in a row.

The small holes 42 in the uppermost row are gas inlets for introducing N2 gas into the processing chamber 26, and as shown in FIG. A gas passage 50, which is provided in the container plate 20 and communicates with the gas passage 48, communicates with a gas introduction port 52 on the lower surface of the container plate 20. It should be noted that a large number of small holes 54 are arranged in a row at a position facing the small holes 42 on the inner surface of the container plate 20.
These small holes 54 communicate with the gas introduction port 52 on the lower surface of the container plate 20 through the gas passage 56 in the container plate 20 and the gas passage 50.

The small holes 4 in the middle row on the wall surface of the recess 36
Reference numeral 4 denotes a rinse liquid inlet for introducing a rinse liquid, for example, pure water, into the processing chamber 26, and a container plate body is provided via a rinse liquid passage 60 provided in the container plate body 22 as shown in FIG. It communicates with the rinse liquid introduction port 62 on the lower surface of 22.

The small holes 46 in the lowermost row are developing solution introducing ports for introducing the developing solution into the processing chamber 26, and as shown in FIG. 4, a developing solution passage provided in the container plate 22. It communicates with the developing solution introduction port 66 on the lower surface of the container plate 22 via 64.

On the wall surface of the recess 36 of the container plate 22,
Below the small holes 46 in the bottom row and at a position slightly higher than the upper end of the semiconductor wafer W in the processing chamber 26,
A pair of holes 68 having a relatively large diameter are provided on the left and right. These holes 68 are overflow discharge ports for discharging the liquid overflowing from the processing chamber 26.
The drainage passage 70 provided in the container plate 22 as shown in FIG.
To the overflow discharge port 72 on the lower surface of the container plate 22.

A main discharge port 74 having a large diameter for sucking and discharging various liquids or gases in the processing chamber 26 under reduced pressure or negative pressure is provided at the lower end of the recess 36 of the container plate 22. The main discharge port 74 communicates with a main discharge port 78 on the lower surface of the container plate body 22 via a main discharge passage 76 provided in the container plate body 22 as shown in FIG.

In FIG. 3, a circular recess 80 corresponding to the lid 32 is formed on the outer surface of the container plate 20, and a deeper recess 82 extends in the vertical recess meandering in the circular recess 80. is doing. A temperature control water inlet 82a is provided at the lower end of the recess 82, and the upper end of the recess 82 communicates with the temperature control water outlet 82c via an outer circular groove 82b. The temperature control water inlet 82a and the temperature control water outlet 82c are respectively connected to the temperature control water inlet port 88 and the temperature control water via the temperature control water passages 84 and 86 provided in the container plate 20 as shown in FIG. It leads to the water discharge port 90.

Screw holes 92 are provided at regular intervals in the peripheral direction of the recess 80 of the container plate 20 in the circumferential direction, and the bolts 3 are inserted into these screw holes 92 through the through holes 94 of the lid 32.
The lid 34 can be closed by screwing 4 together. An annular O-ring 96 for sealing the inside of the recess 80 is provided on the inner surface of the lid 32. When the lid 32 is closed, a temperature control water passage 83 is formed inside along the meandering recess 82. On the outside of the recess 80, the bolt 24 is attached to the container plate 2.
Through holes 98 for passing to the second side are provided in a U shape at regular intervals. Screw holes 100 and 102 are provided at upper end portions of both side surfaces of both container plate bodies 20 and 22, and a bolt 104 is screwed into these screw holes 100 and 102 through through holes 106 and 108 of the flange 12a. By doing so, the flange 12a is integrally fixed to both the container plate bodies 20 and 22.

FIG. 5 is a vertical sectional view taken along the line AA 'in FIG. 1, and FIG. 6 is a partially enlarged sectional view showing the structure of the wafer holding portion in the container body 12.

As shown in FIG. 5, both container plates 20, 22
The upper end of the inner side surface of the wafer is cut off in a tapered shape so that the wafer entrance / exit 26a can easily pass through the semiconductor wafer W.
In the container plate 22, the gas introduction port 42 has a gas passage 48.
The N 2 gas from the gas passage 48 is discharged downward into the processing chamber 26 from the gas inlet 42 at a predetermined inclination angle θ, for example, 30 °. The rinsing liquid introduction port 44 and the rinsing liquid passage 60, and the developing solution introduction port 46 and the developing liquid passage 64 have the same positional relationship, and the rinsing liquid from the rinsing liquid passage 60 and the developing liquid passage 64 The developing solution is also discharged downward from the rinse solution introducing port 44 and the developing solution introducing port 46 at an inclination angle of 30 °, respectively. Also in the container plate 20, N2 from the gas passage 56
The gas is discharged downward from the gas introduction port 54 into the processing chamber 26 at an inclination angle of 30 °.

The semiconductor wafer W is housed in the processing chamber 26 with its front surface, that is, the surface to be processed, facing the container plate body 20 side and its back surface facing the container plate body 22 side. As shown in FIG. 6, a stepped portion 36 a is formed on the outer peripheral edge of the recess 36 on the inner wall of the container plate 22.
Are formed. Further, the inner wall of the container plate 20 is also provided with a recess 110 having substantially the same size as the recess 36 on the container plate 22 side. However, the outer peripheral edge of the recess 110 is formed as a tapered surface 110a. The semiconductor wafer W is
The stepped portion 36a on the concave portion 36 side and the tapered surface 11 on the concave portion 110 side
It is held so as to be sandwiched between 0a. In FIG. 6, when the semiconductor wafer W is, for example, an 8-inch wafer and its thickness Dw is 0.8 mm, the semiconductor wafer W
1 on the side of the container plate 20 facing the surface of the container (the surface to be processed)
The depth Da of 10 is selected to be about 1.0 mm, and the depth D of the concave portion 36 on the side of the container plate 22 facing the back surface of the semiconductor wafer W is D.
b may be chosen to be about 0.5 mm.

In FIG. 5, the pipe connecting portion 16 attached to the bottom of the tank 10 is for connecting the main discharge port 78 on the bottom surface of the container plate 22 to an external pipe (not shown). Half of the inside of the tank 10 is the main discharge port 78
And the lower half portion thereof projects outside (downward) of the tank 10. An O-ring 112 for sealing the main discharge port 78 is externally fitted to the outer peripheral surface of the upper half part inserted into the main discharge port 78, and the inside of the tank 10 is attached to the lower surface of the upper half part which is in contact with the bottom surface of the tank 10. An O-ring 114 for sealing is provided, and a nut 116 for a joint is screwed to the base end portion of the lower half portion protruding to the outside of the tank 10.
The other port, namely the gas introduction port 52 in FIG. 4,
A pipe connecting portion 16 for connecting the rinse liquid introducing port 62, the developing liquid introducing port 66, the overflow discharging port 72, the temperature-controlled water introducing port 88, and the temperature-controlled water discharging port 90 to external pipes (not shown), respectively. It may be configured similarly to the above.

FIG. 7 is a piping diagram showing a connection relationship between various ports of the container body 12 and respective parts outside the tank 10.
In this figure, an N 2 gas supply source 124 is connected to the gas inlet 52 via a pipe 122 in which a gas supply valve (open / close valve) 120 is inserted and a pipe connecting portion 16. A rinse liquid supply valve (open / close valve) is provided at the rinse liquid inlet 62.
A rinse liquid supply source 130 is connected via a pipe 128 in which 126 is inserted and a pipe connecting portion 16. A developer supply source 136 is connected to the developer inlet 66 through a pipe 134 having a developer supply valve (open / close valve) 132 inserted therein and a pipe connecting portion 16. Overflow discharge port 72
Is connected to a drainage treatment unit (not shown) via a pipe connection unit 16 and a pipe 138. The main discharge port 78 is connected to the sealed space in the trap tank 144 via the pipe connection portion 16 and a pipe 142 in which a main valve (open / close valve) 140 is inserted. The closed space in the trap tank 144 is a pipe 14 in which a switching valve (three-way valve) 146 is inserted.
The negative pressure source 150 and the atmospheric pressure space 152 are connected via the reference numeral 8. A drainage outlet 144a is provided at the bottom of the trap tank 144.
This drainage discharge port 144a is connected to a drainage treatment unit (not shown) via a pipe 156 in which a drainage valve (open / close valve) 154 is inserted. The temperature control water introduction port 88 and the temperature control water discharge port 90 are connected to the pipe connection portion 16 and the pipe 1.
It is connected to the temperature controller 160 via 58. Temperature controller 1
The pump 60 has a pump, a heat exchanger, and the like so as to circulate the temperature-controlled water in the temperature-controlled water passage 83 in the container body 12, for example, constant temperature water. The drain pipe 18 on the bottom surface of the tank 10 is connected to a drainage treatment unit (not shown) via a pipe 138. It should be noted that the container body 12 is the semiconductor wafer W held by the container body 12.
Will be installed vertically so that it will be vertical.

Next, the operation of the semiconductor wafer developing apparatus of this embodiment will be described with reference to FIGS. First,
As shown in FIG. 8A, the tweezers 28 of the wafer transfer device insert the semiconductor wafer W to be subjected to the development processing into the processing chamber 26 of the container body 12. At the time of this insertion, the tweezers 28 are guided by the recess 30 on the side of the container plate 22 and enter the processing chamber 26. As described above with reference to FIG. 6, the semiconductor wafer W is inserted into the processing chamber 26 with the front surface, that is, the surface to be processed, facing the container plate body 20 side and the back surface facing the container plate body 22 side, and the wafer outer peripheral edge portion is removed. The container plate 22 is held at a fixed position in the processing chamber 26 so as to be sandwiched between the stepped portion 36a of the container plate 22 on the recess 36 side and the tapered surface 110a of the container plate 20 on the recess 110 side.

When the tweezers 28 move out of the processing chamber 26, the drain valve 15 is moved around the trap tank 144.
4 is closed, the switching valve 146 is switched to the negative pressure source 150, and the main discharge valve 140 is opened. As a result, in the processing chamber 26, the main discharge port 74, the main discharge passage 76,
Through the main discharge port 78, the pipe connection portion 16, the pipe 142, the trap tank 144 and the pipe 148, the negative pressure source 15
It is connected to 0, and the pressure is reduced. In this state, the developing solution supply valve 132 is opened. Then, the developer D from the developer supply source 136 is supplied to the pipe 134 and the pipe connecting portion 1.
6. The developer is introduced into the processing chamber 26 from the developer inlet 46 through the developer passage 64. This is shown in FIG. 8 (B).

The developing solution D introduced into the processing chamber 26 through the developing solution introducing port 46 is attracted by a negative pressure and flows downward, as shown in FIG.
As shown in (C), the bubbles B generated in the processing chamber 26 immediately after the introduction is started are filled in the processing chamber 26 so as to be pushed out from the main discharge port 74. Then, as shown in FIG. 8D, when the developer D is sufficiently supplied so that the bubbles B are almost completely removed from the processing chamber 26, the main discharge valve 140 is closed and the switching valve 146 is opened. Switching to the atmosphere 152 side, the drain valve 154 is opened. As a result, the developer D collected in the trap tank 144 is sent to the drain processing unit (not shown) through the pipe 156. Immediately after the main discharge valve 140 is closed, the developer supply valve 132 is also closed, and the supply of the developer D is completed. The developer D overflowing from the processing chamber 26 just before the end is sent from the overflow discharge port 68 to the drain processing unit (not shown) through the drain passage 70, the overflow discharge port 72, the pipe connecting portion 16 and the pipe 138. Therefore, the developing solution D is kept at a constant liquid level in the processing chamber 26.

As described above, the developing solution D is filled up to a certain level in the processing chamber 26, and the semiconductor wafer W is immersed in the developing solution D, so that the development is performed. In this case, the semiconductor wafer W not only has its front surface (processed surface) uniformly in contact with the developing solution D, but also has its rear surface uniformly contacting the developing solution D. From the dimensions of the recesses 36 and 110 in the processing chamber 26 described above with reference to FIG. 6, the thickness of the developing solution D on the front surface side of the semiconductor wafer W in the processing chamber 26 is about 1.0 mm.
The thickness of the developer D on the back surface side of the semiconductor wafer W is about 0.
The thickness is 5 mm, and the development process is performed such that the entire semiconductor wafer W is covered with the liquid film of the developing solution D. When the liquid static development is performed, neither the developing solution D is supplied to the processing chamber 26 nor the developing solution D is discharged from the processing chamber 26, and the developing solution D still in the processing chamber 26 is used as the semiconductor wafer W. Is soaked for a predetermined time, for example 60 seconds. Since the area of the developer D in the processing chamber 26 that comes into contact with the surrounding air, that is, the area of the liquid surface is very small only on the substrate inlet / outlet 26a side,
Little deterioration during development.

During the development process, as shown in FIG. 9A, the temperature control water from the temperature controller 160 is supplied to the temperature control passage 83 in the container plate 20 facing the surface of the semiconductor wafer W. By circulating and supplying F, the developing solution D in the processing chamber 26
The temperature change is suppressed and the development processing temperature is accurately maintained at the set temperature, for example, 23 ° C.

When the developing process is completed, the developer D is discharged from the processing chamber 26, so that the drain valve 154 is closed.
The switching valve 146 is switched to the negative pressure source 150 side, and the main discharge valve 140 is opened. At the same time, as shown in FIG. 9B, the rinse liquid supply valve 126 is opened, and the rinse liquid (pure water) R from the rinse liquid supply source 130 is supplied to the pipe 1.
28, the pipe connection portion 16, the rinse liquid introduction port 62, and the rinse liquid passage 60 to the processing chamber 2 from the rinse liquid inlet port 44.
6 is supplied. Since the main discharge line on the downstream side of the main discharge port 74 has a negative pressure, the rinse liquid R supplied into the processing chamber 26 pushes out the developer D as shown in FIG. 9C. It flows to the lower main outlet 74 side. As a result, most of the developing solution D in the processing chamber 26 is replaced with the rinsing liquid R within a short time, for example, 1 to 2 seconds after the supply of the rinsing liquid R is started. Further, as shown in FIG. 9C, when the supply and the discharge of the rinse solution R are continued for about 10 seconds, the developing solution D is completely replaced with the rinse solution R. In this rinsing step, the rinse R flows evenly on the front surface (processed surface) side of the semiconductor wafer W as well as on the back surface side of the semiconductor wafer W, so that both sides of the semiconductor wafer W are well cleaned. To be done. The wall surface of the processing chamber 26 is also washed with the rinse liquid R.

When the flow rate of the rinse liquid supplied from the rinse liquid inlet 44 in the processing chamber 26 exceeds the flow rate of the rinse liquid supplied from the main outlet 74, the rinse liquid R overflowing in the processing chamber 26 is discharged.
Is from the overflow discharge port 68 to the drainage passage 70, the overflow discharge port 72, the pipe connection portion 16 and the pipe 1.
It is sent through 38 to an unillustrated drainage treatment section. Therefore, the rinse liquid R does not overflow from the upper opening (wafer inlet / outlet) 12 a of the container body 12.

When the rinse process is completed, the rinse liquid supply valve 126 is closed. Then, since the main discharge line remains negative pressure, as shown in (A) and (B) of FIG.
The rinse liquid R in the processing chamber 26 is forcibly discharged from the main discharge port 74 to the trap tank 144 side by the negative pressure suction force. At the end of discharge of the rinse liquid R or at the start of discharge, the gas supply valve 120 is opened. As a result, the N2 gas from the N2 gas supply source 124 is supplied to the pipe 122 and the pipe connecting portion 16.
And gas introduction ports 42, 5 through the gas passages 48, 56
2 is supplied into the processing chamber 26. As shown in FIG. 10C, the N2 gas supplied into the processing chamber 26 is vigorously moved downward along the front surface and the back surface of the semiconductor wafer W by the negative pressure suction force from the lower main discharge line side. The rinse liquid R that flows and remains in the processing chamber 26 is pushed out, and further, the particles adhering to the semiconductor wafer W or the wall surface of the processing chamber 26 are drawn in and discharged from the main discharge port 74. It As described above, since the N2 gas supplied from the upper portion of the processing chamber 26 is exhausted to the main discharge port 74 side at the lower end of the processing chamber 26 at a negative pressure, particles in the processing chamber 26 may not be scattered outside the container. Absent.

By blowing the N 2 gas as described above, the semiconductor wafer W is drained and dried, and at the same time, the wall surface of the processing chamber 26 is drained and dried. And
At a predetermined timing, as shown in FIG. 10D, the tweezers 28 of the wafer transfer device come into the processing chamber 26 and hold the semiconductor wafer W by suction and lift it. At the time of unloading the wafer, the front surface (processed surface) and the back surface of the semiconductor wafer W are blown with N2 gas having a strong wind pressure while passing in front of the gas introduction ports 54 and 42, respectively. This air knife effect also removes the rinse liquid or particles still remaining or adhering to the semiconductor wafer W. In this case, when the ionized N2 gas is used, the semiconductor wafer W can be prevented from being charged.

After the semiconductor wafer W is unloaded from the container body 12, the gas supply valve 120 is closed. Further, since the rinse treatment liquid accumulated in the trap tank 144 is sent to the drainage treatment unit, the switching valve 146 is switched to the atmosphere side and the drainage valve 154 is opened. All the drainage liquid in the trap tank 144 is drained during the interval until the next development process is started. Meanwhile, the main discharge valve 140 is closed so that the mist on the trap tank 144 side does not enter the processing chamber 26 side.

When the waiting time until the next development processing is long,
Or if development processing is not performed for a long time,
In order to prevent the deterioration of the developing solution and the rinsing solution or the generation of particles that remain in the pipe or the fluid passage in the container body 12, for example, dummy dispensing may be performed in the following procedure. That is, in a state in which the semiconductor wafer W is not housed in the processing chamber 26 of the container body 12, the developing solution D is first poured into the processing chamber 26 for a predetermined time and then the rinse liquid R for a predetermined time in the same operation as described above. Then, the N2 gas is finally ejected for a predetermined time. By such a dummy dispense, old developer and rinse liquid remaining in the pipe or the fluid passage are discarded, and the inner wall of the processing chamber 26 is also cleaned.
Therefore, it is possible to prevent the yield of the development processing from decreasing.

As described above, in the semiconductor wafer developing apparatus of this embodiment, the semiconductor wafer W is immersed in the developing solution in the groove-shaped processing chamber 26 provided inside the jacket type container body 12 to perform the developing process. Is given. The developer is in the processing chamber 26.
Since the negative pressure suction force is introduced into the inside, the developing solution quickly spreads around the semiconductor wafer W. The thickness (amount) of the developing solution in contact with the surface to be processed of the semiconductor wafer W can be arbitrarily determined according to the size of the processing chamber 26 and is not limited by the surface tension. Therefore, the amount of developer used can be reduced as much as possible. In addition, since the groove-shaped processing chamber 26 is filled with the developing solution, the area where the developing solution contacts the air is small, and the deterioration of the developing solution is small.

Further, in the semiconductor wafer developing apparatus of this embodiment, the semiconductor wafer W only needs to be housed in the processing chamber 26, the wafer holding / rotating mechanism such as the spinner mechanism is not required, and the developing solution / rinse solution is scattered. No need for a protective cup.
Further, since it is not necessary to rotate the semiconductor wafer W, no special centering mechanism is required. Therefore, it is possible to realize a wafer developing device that is small, simple, and low in cost, and that is easy to handle and maintain.

Further, a port for introducing a developing solution, a rinsing liquid and N 2 gas, a fluid passage and a discharge port are provided in the container body 12 in the processing chamber 26, and the tank 1
By connecting an external pipe to the 0 pipe connection portion 16,
The processing chamber 26 includes a developer supply source 136 and a rinse solution supply source 13.
It is connected to various fluid supply sources such as 0 and a drainage recovery unit such as a trap tank 144. Accordingly, by operating the valve inserted in each pipe, an arbitrary liquid or gas can be supplied into the processing chamber 26 or discharged from the processing chamber 26 at an arbitrary timing. A series of process steps of development, rinsing, and drying can be performed quickly.

Further, as described above, since the area where the developing solution contacts the air in the processing chamber 26 is small, the temperature change of the developing solution is small. Further, in the semiconductor wafer developing apparatus of the present embodiment, the temperature-controlled water is circulated and supplied into the inside of the container plate 20 facing the surface to be processed of the semiconductor wafer W in the processing chamber 26, and the developing solution and the semiconductor during the development processing The temperature of the wafer W is maintained at the set value. Since the processing chamber 26 has a size slightly larger than the outer shape of the semiconductor wafer W, the temperature adjusting mechanism built in the container body 12 is compact. Since the volume to be temperature-controlled is sufficiently smaller than that of the container body 12, the temperature is effectively controlled.

Further, in the semiconductor wafer developing apparatus of this embodiment, since the jacket type container body 12 is arranged upright, the laterally occupied area is small. The advantage of this space saving becomes more remarkable as a plurality of container bodies 12 are installed side by side and the number of the installed containers increases. Therefore, it is easy to add the container body 12 or change the layout.

The preferred embodiment of the present invention has been described above. However, the present invention is not limited thereto, and various modifications and changes can be made within the scope of the technical idea thereof. For example, in the above-described embodiment, different passages (4
8, 56), 60, 64 and inlets 42, 44, 46
However, all or part of the liquid or gas (for example, rinse liquid and N2 gas) may be supplied into the processing chamber 26 from the same (common) inlet. Further, it is possible to arbitrarily change the number of small holes forming the introduction ports 42, 44, 46, the diameter, the installation position and the like. It is also possible to provide two or more main outlets 74. Further, by omitting the means for supplying or introducing the developing solution, the rinsing solution or the N2 gas from the container body 12, the developing solution, the rinsing solution or the N2 gas can be supplied from the outside through a nozzle or the like through the upper opening (wafer inlet / outlet) 12a of the container body. It is also possible to supply it into the processing chamber 26.
It is also possible to perform only the developing process inside and perform the rinsing process and the drying process at another place. Instead of N2 gas, clean air or other inert gas such as helium or argon may be used.

Further, in the above embodiment, the pipe connecting portion 16 is provided on the bottom surface of the tank 10, but it may be provided on the side surface of the tank 10, and the tank 10 is omitted and the container body 12 is omitted.
It may be provided on the bottom surface or the side surface of the. Therefore, for example, the developing solution can be introduced from the lower portion of the processing chamber 26 and discharged from the upper portion thereof. It is also possible to attach a sealable opening / closing lid to the upper surface of the container body 12 and arrange the container body 12 diagonally or horizontally to arrange one or multiple stages. Further, in the above-described embodiment, the temperature control water passage is provided inside the container body 12 to control the temperature in the processing chamber 26. However, without providing such a temperature control water passage, the container body 12 is opened. The temperature may be adjusted by putting the whole in temperature-controlled water.

Further, in the above-mentioned embodiment, an example in which the container main body 12 is vertically arranged is explained, but the container main body 12 is held so as to be sandwiched between the step portion 36a and the tapered surface 110a. When the semiconductor wafer W is prone to rattling due to the gap, as shown in FIG. 11, the container body 1 is placed so that the surface to be processed of the semiconductor wafer W is on the upper surface side.
2 may be installed by inclining with respect to the vertical line V within a range of about 5 to 45 °. By doing so, the semiconductor wafer W is held in a state of being offset toward the step portion 36a,
The developer can be kept constant with respect to the surface to be processed without rattling during processing.

When the semiconductor wafer W is held in the container body 12, the outer peripheral edge portion of the semiconductor wafer W is held in the container body 1.
If it is desired to avoid contact with the second stepped portion 36a or the tapered surface 110a and to prevent the resist on the outer peripheral edge (edge) portion from being left without being developed, it is held by vacuum suction as shown in FIG. You may do it. In this case, the vacuum suction part 161 is provided at one or a plurality of locations inside the central portion of the semiconductor wafer W that is not the surface to be processed and at a portion inside the outer peripheral edge portion so as to project into the processing chamber 26, and the outer periphery of the semiconductor wafer W is provided. At least 1 part from the inner wall of the processing chamber 26
Hold it in a state of being separated by about 2 mm. The vacuum suction port 1
A detailed description of the pipe 163 and the like communicating with 62 will be omitted.

Although the above embodiment relates to the semiconductor wafer developing apparatus, the present invention can be applied to any processing apparatus which performs a predetermined processing by immersing at least the surface to be processed of the substrate in the processing liquid. It can also be applied to, for example, a cleaning processing device or a wet etching device. Therefore, the substrate in the present invention is not limited to a semiconductor wafer, but includes an LCD substrate, a glass substrate, a printed circuit board, a CD substrate and other substrates.

[0051]

As described above, according to the processing apparatus of the present invention, the substrate is housed in the processing chamber having a space slightly larger than the outer shape of the substrate and is processed into the processing chamber by the negative pressure suction force. Since the solution is introduced and the processing solution is discharged from the processing chamber, desired processing can be performed even in a narrow processing chamber space. As a result, it is possible to save developer consumption, downsize the device, and simplify operation and maintenance.
It is possible to continuously perform different processes in the same container, and it is also possible to perform simple, efficient, and highly accurate temperature control for the substrate and the process liquid.

[Brief description of drawings]

FIG. 1 is a perspective view showing an external configuration of a semiconductor wafer developing apparatus according to an embodiment of the present invention.

FIG. 2 is a perspective view showing an external configuration of a container body of the semiconductor wafer developing apparatus of the embodiment.

FIG. 3 is an exploded perspective view showing the internal structure of the container body in the embodiment.

FIG. 4 is an exploded perspective view showing a configuration of a fluid passage in the container body in the embodiment.

5 is a vertical cross-sectional view taken along the line AA in FIG.

FIG. 6 is a partial cross-sectional view showing the structure of a wafer holding means in the container body of the embodiment.

FIG. 7 is a piping diagram showing a connection relationship between various ports of the container body and external parts in the example.

FIG. 8 is a schematic cross-sectional view for explaining the operation of the developing process in the semiconductor wafer developing apparatus of the embodiment.

FIG. 9 is a schematic cross-sectional view for explaining the operation of the rinse processing in the semiconductor wafer developing apparatus of the embodiment.

FIG. 10 is a schematic cross-sectional view for explaining the operation of the drying process in the semiconductor wafer developing apparatus of the embodiment.

FIG. 11 is a schematic cross-sectional view for explaining an installation example of the container body in the semiconductor wafer developing apparatus of the embodiment.

FIG. 12 is a schematic cross-sectional view showing the configuration of another example of the wafer holding means in the container body in the semiconductor wafer developing apparatus of the embodiment.

[Explanation of symbols]

 10 Tank 12 Container Body 16 Piping Connections 20, 22 Container Plate 30 Tweezers Guide Recess 36 Recess of Container Plate 22 42 N2 Gas Introducing Port 44 Rinse Liquid Introducing Port 46 Developer Introducing Port 48 N2 Gas Passage 52 N2 Gas Introducing Port 54 N2 gas inlet port 56 N2 gas passage 60 Rinse liquid passage 62 Rinse liquid inlet port 64 Developer passage 66 Developer inlet port 68 Overflow discharge port 70 Overflow discharge passage 72 Overflow discharge port 74 Main discharge port 78 Main discharge port 83 Temperature Water control passage 124 N2 gas supply source 130 Rinse liquid supply source 136 Developer supply source 144 Trap tank 160 Temperature controller

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[Procedure amendment]

[Submission date] May 7, 1993

[Procedure Amendment 1]

[Document name to be corrected] Drawing

[Name of item to be corrected] Figure 3

[Correction method] Change

[Correction content]

[Figure 3]

[Procedure Amendment 2]

[Document name to be corrected] Drawing

[Name of item to be corrected] Figure 7

[Correction method] Change

[Correction content]

[Figure 7]

[Procedure 3]

[Document name to be corrected] Drawing

[Correction target item name] Figure 8

[Correction method] Change

[Correction content]

[Figure 8]

Claims (2)

[Claims] 1. A processing chamber having a space slightly larger than the outer shape of a substrate to be processed, a substrate inlet / outlet for putting the substrate in the processing chamber and taking out the substrate from the processing chamber, and a processing chamber in the processing chamber. A container having a treatment liquid inlet for introducing a treatment liquid and an outlet for discharging the treatment liquid from the treatment chamber, and the treatment liquid in the treatment chamber via the treatment liquid inlet. For introducing the processing liquid into the processing chamber with a negative pressure suction force, and for discharging the processing liquid with a negative pressure suction force from the processing chamber through the discharge port. A processing device comprising: negative pressure suction means. 2. A processing chamber having a space slightly larger than the outer shape of a substrate to be processed, a substrate inlet / outlet for putting the substrate in the processing chamber and taking out the substrate from the processing chamber, and a processing chamber in the processing chamber. One or more treatment liquid inlets for introducing one or more treatment liquids, and one or more gas inlets for introducing one or more gases to the treatment chamber And a container having a discharge port for discharging the processing liquid or the cleaning liquid or the gas from the processing chamber, and for supplying the processing liquid into the processing chamber through the processing liquid introduction port. Treatment liquid supply means, gas supply means for supplying the gas into the treatment chamber through the gas inlet, and introducing the treatment liquid or the gas into the treatment chamber with a negative pressure suction force, From the processing room A negative pressure suction means for discharging the processing liquid or the gas with a negative pressure suction force through the discharge port.