JPH06271397A - Apparatus for pulling up single crystal - Google Patents
Apparatus for pulling up single crystalInfo
- Publication number
- JPH06271397A JPH06271397A JP6224793A JP6224793A JPH06271397A JP H06271397 A JPH06271397 A JP H06271397A JP 6224793 A JP6224793 A JP 6224793A JP 6224793 A JP6224793 A JP 6224793A JP H06271397 A JPH06271397 A JP H06271397A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- melt
- crystal
- pulling
- peripheral surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、不活性ガス流の制御手
段を有するチョクラルスキー(CZ)法による単結晶引
上げ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Czochralski (CZ) method for pulling a single crystal having an inert gas flow control means.
【0002】[0002]
【従来の技術】チョクラルスキー法によるSi単結晶引
上げ装置として、特開昭61−68389号公報にも記
載されているように、Siメルトから引上げられる単結
晶の周囲に間隔をあけて同心的に円筒状の水冷筒を配置
し、この冷却筒内に上方からArガスを供給するものが
知られている。2. Description of the Related Art As an apparatus for pulling Si single crystal by the Czochralski method, as disclosed in Japanese Patent Laid-Open No. 61-68389, a single crystal pulled from Si melt is concentrically spaced around the single crystal. It is known that a cylindrical water cooling cylinder is arranged in the inside of the cylinder and Ar gas is supplied into the cooling cylinder from above.
【0003】このパージチューブは、引上げ中の単結晶
への炉内輻射熱を遮蔽して単結晶を冷却し、単結晶の引
上げ速度を高めるとともに、Arガスをメルト上から系
外に通気させることによって、Siメルトと石英るつぼ
との反応によって生じたSiO、COの凝集物がメルト
中に落下することを防止する機能を有する。This purge tube shields the radiant heat in the furnace to the single crystal being pulled to cool the single crystal, increase the pulling rate of the single crystal, and ventilate Ar gas from above the melt to the outside of the system. , Has a function of preventing agglomerates of SiO and CO generated by the reaction between the Si melt and the quartz crucible from dropping into the melt.
【0004】また、特開平2−97481号公報には、
この冷却筒の下端開口を上方よりも縮径して、単結晶引
上げ域へのArガスの下端開口からの噴出ガスの流速を
早めて冷却効率を高めようとする試みが開示されてい
る。ところが、この場合、引上げ域に吹付けられるAr
ガスは、冷却筒内を高温のSi単結晶の側面に沿って流
下したのちの昇温された状態で噴出するものであるた
め、引上げ単結晶の下端の冷却能力は期待される程の効
果を挙げることはできない。Japanese Patent Laid-Open No. 2-97481 discloses that
An attempt is made to reduce the diameter of the lower end opening of the cooling cylinder from above to accelerate the flow rate of the gas ejected from the lower end opening of Ar gas to the single crystal pulling region to improve the cooling efficiency. However, in this case, Ar sprayed in the pulling area
Since the gas flows down along the side surface of the high temperature Si single crystal in the cooling cylinder and is then jetted in a heated state, the cooling capacity at the lower end of the pulled single crystal has an expected effect. I can't name it.
【0005】さらには、特開平4−209789号公報
には、漏斗型ガス供給部材により、溶融シリコン凝固界
面近傍に不活性ガスを直接供給することにより、単結晶
中の酸素濃度を低く抑えることが開示されている。しか
しながら、漏斗型ガス供給部材の内部を通過する間に、
不活性ガスの温度が上昇し、結晶を効果的に冷却するこ
とができないため、単結晶の温度勾配の大幅な増大は期
待できない。Further, in Japanese Unexamined Patent Publication No. 4-209789, a funnel-type gas supply member directly supplies an inert gas in the vicinity of the molten silicon solidification interface, whereby the oxygen concentration in the single crystal can be suppressed to a low level. It is disclosed. However, while passing through the inside of the funnel-shaped gas supply member,
Since the temperature of the inert gas rises and the crystal cannot be cooled effectively, a large increase in the temperature gradient of the single crystal cannot be expected.
【0006】[0006]
【発明が解決しようとする課題】本発明は、先に開示し
た引上げ域に直接Arガスを吹付け、それを円筒状の熱
遮蔽部材内を上昇する上昇流と湯面に沿う流れとに分離
する単結晶引上げ装置の改良に係るもので、その目的
は、円筒状の熱遮蔽部材を有する単結晶引上げ装置にお
いて、SiO凝集物のような不純物をメルト上に落下さ
せることなく、引上げ域に吹付けられるArガスによる
冷却能をさらに高める手段を提供することにある。DISCLOSURE OF THE INVENTION According to the present invention, Ar gas is directly sprayed on the above-mentioned pulling region, and the Ar gas is separated into an ascending flow rising in a cylindrical heat shield member and a flow along the molten metal surface. The present invention relates to an improvement of a single crystal pulling apparatus for a single crystal pulling apparatus having a cylindrical heat shield member, in which impurities such as SiO agglomerates are blown to the pulling area without dropping onto the melt. It is to provide a means for further enhancing the cooling ability by the attached Ar gas.
【0007】[0007]
【課題を解決するための手段】本発明は、引上げ単結晶
を同心上に囲繞する円筒状の熱遮蔽部材を有する単結晶
引上げ装置において、該円筒状の熱遮蔽部材の下端部に
一体として取り付けられ、引上げ単結晶の凝固界面直上
に指向する上向きと下向きとの2つの不活性ガス吹き出
し口を設けると共に、該不活性ガス吹き出し口の近傍の
円筒状の熱遮蔽部材の内壁周囲に受棚を設けたことを特
徴とする。DISCLOSURE OF THE INVENTION The present invention is a single crystal pulling apparatus having a cylindrical heat shield member concentrically surrounding a pulled single crystal, and is integrally attached to the lower end of the cylindrical heat shield member. And two upward and downward inert gas outlets directed directly above the solidification interface of the pulled single crystal are provided, and a receiving shelf is provided around the inner wall of the cylindrical heat shield member near the inert gas outlet. It is characterized by being provided.
【0008】なお、不活性ガスは通常の引上げ装置上部
からの吹き出しとは、別系統とすることができる。Incidentally, the inert gas can be provided as a separate system from the blow-off from the usual upper part of the pulling device.
【0009】[0009]
【作用】引上げ単結晶の凝固界面直上に吹き付けられる
不活性ガスは、昇温されていないのでその冷却能力は大
きく、上向きと下向きとに吹き出されるため、引上げ単
結晶表面の広範囲にわたり冷却して引上げ単結晶に大き
な温度勾配を形成し、これによって、単結晶の引上げ速
度を増大することができる。[Function] The inert gas blown just above the solidification interface of the pulled single crystal has a large cooling capacity because it is not heated, and is blown upward and downward, so that it can be cooled over a wide area of the pulled single crystal surface. A large temperature gradient is formed in the pulled single crystal, which can increase the pulling rate of the single crystal.
【0010】ガスは下向き吹き出し口から単結晶表面に
当たった後、メルト表面に沿った流れと上向きの反転流
とになる。また、液面に沿った流れは、通常の上部より
供給し、下部から排出されるガス流れの効果を増長す
る。これによって、SiO,COガスの排出効果を高
め、有転位化の防止、単結晶の炭素濃度の低減が可能と
なる。After hitting the surface of the single crystal from the downward outlet, the gas becomes a flow along the melt surface and an upward reversal flow. Further, the flow along the liquid surface is normally supplied from the upper part and enhances the effect of the gas flow discharged from the lower part. As a result, it becomes possible to enhance the effect of discharging SiO and CO gas, prevent dislocation, and reduce the carbon concentration of the single crystal.
【0011】さらに、不活性ガス吹き出し口の近傍の円
筒状の熱遮蔽部材の内壁周囲に受棚を設けたことによっ
て、円筒状の熱遮蔽部材と単結晶との空隙は狭くなり、
不活性ガスの流速が高められ、不活性ガスによる冷却能
を更に増大する。また、この棚の存在は、強制上昇流及
び反転上昇流に伴い持ち込まれたSiOの凝集物を受け
止め、メルト表面への落下を防止し、有転位化を防止す
る。Further, since the receiving shelf is provided around the inner wall of the cylindrical heat shield member near the inert gas outlet, the gap between the cylindrical heat shield member and the single crystal is narrowed,
The flow rate of the inert gas is increased, and the cooling capacity by the inert gas is further increased. Further, the presence of this shelf receives the SiO agglomerates brought in with the forced ascending flow and the reversing ascending flow, prevents them from falling onto the melt surface, and prevents dislocation.
【0012】[0012]
【実施例】図1は本発明の実施例を示す。FIG. 1 shows an embodiment of the present invention.
【0013】同図において、本発明の単結晶引上げ装置
1には、シールド2の内側に配置された加熱装置3によ
って加熱溶融されたるつぼ4内のメルトMに種結晶Sを
浸漬したのち引き上げられる単結晶Cの外周面に、同心
状に円筒状のパージチューブ5が配置されている。In the drawing, in the single crystal pulling apparatus 1 of the present invention, the seed crystal S is dipped in the melt M in the crucible 4 heated and melted by the heating apparatus 3 arranged inside the shield 2 and then pulled up. A cylindrical purge tube 5 is concentrically arranged on the outer peripheral surface of the single crystal C.
【0014】このパージチューブ5の下端には、メルト
直上の結晶に指向するArガス噴出口6が設けられ、ま
た、この噴出口6の直上の内周面には棚部材7が設けら
れている。At the lower end of the purge tube 5, an Ar gas ejection port 6 is provided which directs the crystal directly above the melt, and a shelf member 7 is provided on the inner peripheral surface immediately above the ejection port 6. .
【0015】図2は、このパージチューブ5の細部構造
とその作用の説明図である。FIG. 2 is an explanatory view of the detailed structure of the purge tube 5 and its operation.
【0016】同図に示すように、パージチューブ5の下
端に形成された噴出口6は、内方下方に略45度に傾斜
したノズル孔として形成され、その下端にはリム縁8が
延出している。ノズル状の噴出口6の直上の棚部材7
は、ノズルがそのまま内方に突出し、パージチューブ5
の内周面に受け状に形成されている。As shown in the figure, the jet port 6 formed at the lower end of the purge tube 5 is formed as a nozzle hole which is inclined inwardly at an angle of about 45 degrees, and a rim edge 8 extends at the lower end thereof. ing. Shelf member 7 immediately above the nozzle-shaped ejection port 6
The nozzle protrudes inward as it is, and the purge tube 5
Is formed in a receiving shape on the inner peripheral surface of the.
【0017】矢印によって示す噴出口6からのArガス
は、メルト直上の単結晶成長域に当たり、そこから転回
して分岐流を形成する。一方はメルト表面を流れて系外
に出る流れを形成し、他方は単結晶Cの側面に沿って上
昇する分岐流を形成する。パージチューブ5と単結晶C
との間の間隔は棚部材7によって狭く形成されているの
で、上向き分岐流は早くなるがその量は制限され、メル
ト上の流れの量が多くなり、SiO、CO等の有害生成
成分の排出を助けることになる。Ar gas from the jet port 6 indicated by an arrow hits the single crystal growth region directly above the melt and turns from there to form a branched flow. One forms a flow that flows on the melt surface and exits the system, and the other forms a branched flow that rises along the side surface of the single crystal C. Purge tube 5 and single crystal C
Since the space between and is narrowly formed by the shelf member 7, the upward branch flow becomes faster, but its amount is limited, and the amount of flow on the melt increases, so that harmful production components such as SiO and CO are discharged. Will help.
【0018】[0018]
【発明の効果】本発明によって以下の効果を奏する。The present invention has the following effects.
【0019】(1) 結晶成長域に不活性ガスが直接吹
付けられるので、メルト直上結晶部の冷却が進む。(1) Since the inert gas is directly blown to the crystal growth region, cooling of the crystal part directly above the melt proceeds.
【0020】(2) 結晶成長域に直接吹付けられたの
ちの不活性ガスの分岐流によるメルト表面からのSi
O、CO等の有害成分の排出能力は、棚部材の存在によ
り大きくなる。(2) Si from the melt surface due to the branched flow of the inert gas after being directly sprayed on the crystal growth region
The ability to discharge harmful components such as O and CO increases due to the presence of the shelf member.
【0021】(3)上方流によってパージチューブ内に
導入された有害成分は凝縮されて棚上に落下堆積され、
メルトに落下することがなく、引上げ単結晶の欠陥の発
生が少なくなる。(3) The harmful components introduced into the purge tube by the upward flow are condensed and dropped and accumulated on the shelf,
It does not fall into the melt, and defects in the pulled single crystal are reduced.
【図1】 本発明の実施例を示す。FIG. 1 shows an embodiment of the present invention.
【図2】 本発明に係るパージチューブの細部構造とそ
の作用の説明図である。FIG. 2 is an explanatory diagram of a detailed structure of a purge tube according to the present invention and its operation.
1 単結晶引上げ装置 2 シールド 3 加熱装置 4 るつぼ 5 パージチューブ 6 ガス噴出口 7 棚部材 8 リム縁 M メルト S 種結晶 C 単結晶 1 Single crystal pulling device 2 Shield 3 Heating device 4 Crucible 5 Purge tube 6 Gas ejection port 7 Shelf member 8 Rim edge M Melt S Seed crystal C Single crystal
───────────────────────────────────────────────────── フロントページの続き (72)発明者 大久保 正道 山口県光市大字島田3434番地 ニッテツ電 子株式会社内 (72)発明者 原田 博文 山口県光市大字島田3434番地 ニッテツ電 子株式会社内 (72)発明者 守田 潔 山口県光市大字島田3434番地 ニッテツ電 子株式会社内 (72)発明者 川上 和人 山口県光市大字島田3434番地 新日本製鐵 株式会社光製鐵所内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Masamichi Okubo 3434 Shimada, Hitsu-shi, Yamaguchi Prefecture, Nittetsu Denshi Co., Ltd. (72) Hirofumi Harada, 3434 Shimada, Hikari-shi, Yamaguchi Prefecture, Nittetsu Denshi Co., Ltd. ( 72) Inventor Kiyoshi Morita 3434 Shimada, Hikari City, Yamaguchi Prefecture, Nitetsu Denshi Co., Ltd. (72) Kazuto Kawakami, 3434 Shimada, Hikari City, Yamaguchi Prefecture, Shinko Nippon Steel Co., Ltd.
Claims (1)
を有する単結晶引上げ装置において、前記水冷筒の下端
部分に、メルト直上の単結晶に指向する不活性ガス吹出
し口を設けると共に、前記不活性ガス吹出し口の近傍の
冷却筒の内壁周面に受棚を設けた単結晶引上げ装置。1. A single crystal pulling apparatus having a water-cooled cylinder concentrically surrounding the pulled single crystal, wherein an inert gas blowout port directed to the single crystal immediately above the melt is provided at the lower end portion of the water-cooled cylinder, and A single crystal pulling device with a receiving shelf provided on the inner wall peripheral surface of the cooling cylinder near the active gas outlet.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6224793A JPH06271397A (en) | 1993-03-22 | 1993-03-22 | Apparatus for pulling up single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6224793A JPH06271397A (en) | 1993-03-22 | 1993-03-22 | Apparatus for pulling up single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06271397A true JPH06271397A (en) | 1994-09-27 |
Family
ID=13194626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6224793A Pending JPH06271397A (en) | 1993-03-22 | 1993-03-22 | Apparatus for pulling up single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06271397A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109041636A (en) * | 2018-08-03 | 2018-12-21 | 贵州兴贵源酒业有限公司 | The breeding method of Rosa roxburghii Tratt seedling |
-
1993
- 1993-03-22 JP JP6224793A patent/JPH06271397A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109041636A (en) * | 2018-08-03 | 2018-12-21 | 贵州兴贵源酒业有限公司 | The breeding method of Rosa roxburghii Tratt seedling |
CN109041636B (en) * | 2018-08-03 | 2021-12-03 | 贵州志浩刺梨产业开发有限公司 | Method for cultivating roxburgh rose seedlings |
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