JPH06268035A - Micro prober - Google Patents

Micro prober

Info

Publication number
JPH06268035A
JPH06268035A JP8772193A JP8772193A JPH06268035A JP H06268035 A JPH06268035 A JP H06268035A JP 8772193 A JP8772193 A JP 8772193A JP 8772193 A JP8772193 A JP 8772193A JP H06268035 A JPH06268035 A JP H06268035A
Authority
JP
Japan
Prior art keywords
prober
substrate
comb
subject
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8772193A
Other languages
Japanese (ja)
Inventor
Katsuyoshi Nakano
勝吉 中野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EEJINGU TESUTA KAIHATSU KYODO
EEJINGU TESUTA KAIHATSU KYODO KUMIAI
Original Assignee
EEJINGU TESUTA KAIHATSU KYODO
EEJINGU TESUTA KAIHATSU KYODO KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EEJINGU TESUTA KAIHATSU KYODO, EEJINGU TESUTA KAIHATSU KYODO KUMIAI filed Critical EEJINGU TESUTA KAIHATSU KYODO
Priority to JP8772193A priority Critical patent/JPH06268035A/en
Priority to EP94103001A priority patent/EP0615131A1/en
Publication of JPH06268035A publication Critical patent/JPH06268035A/en
Priority to US08/547,383 priority patent/US5555422A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable simultaneous probing to pad portions of a plurality of specimens formed on a semiconductor substrate. CONSTITUTION:Electric circuits consisting of a conductive material film or conductive layer is formed on a prober substrate 1 consisting of semiconductor such as silicon and materials which assure good reproducibility to stress and have small thermal expansion coefficient such as ceramic or metal with coating of insulating film. A comb-teeth portion having the layout and size accurately corresponding to a pad portion 8' of an IC (semiconductor integrated circuit) element which is formed on the surface of a silicon substrate as an inspection sample obtained by processing the prober substrate 1 is also provided and a projected metal part is also formed on the electric circuit at the end part of the comb-teeth portion as a contact for the pad portion 8' of the specimen Moreover, the probing with a plurality of inspection samples can be made simultaneously by providing a plurality pairs of probing.portions through modification of thickness, size, shape, composition and property in the pitch matching with the arrangement of the specimen in order to give necessary mobility to the comb-teeth portion and the periphery thereof.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、被検体であるシリコン
などの半導体基板表面に形成されたIC(半導体集積回
路)素子の特性検査やエージングを目的とするエージン
グ装置や特性などの検査装置(以下両者を纏め本体装置
と称する)に付属し、前記被検体のボンディング用パッ
ド部(以下パッド部と略称する)に対し高精度・高信頼
度での接触を目的とする探触部すなわちマイクロプロー
バに関するものであり、構造上複数の被検体やウエハー
全体に育成された多数の被検体を同時にプロービング可
能な構造に拡張することも可能なので、本体装置との組
合わせにより製造工程の初期段階で特性検査やエージン
グ処理をウエハーの段階で行ない不良品を発見・駆除す
ることができ、それらが後のラインに流れることを防止
することにより特に歩留りの悪いICの生産ラインの効
率を大きく向上させ得ると同時に、近年需要が多くなっ
てきたIC素子をペレットの状態で販売する所謂チップ
セールスにも対応することができる。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an aging device for inspecting and aging characteristics of an IC (semiconductor integrated circuit) element formed on the surface of a semiconductor substrate such as silicon, which is an object to be inspected, and an inspection apparatus for such characteristics ( Both of them are collectively referred to as a main body device hereinafter), and a probe unit or a microprober for the purpose of contacting the bonding pad portion (hereinafter abbreviated as a pad portion) of the subject with high accuracy and reliability. Since it is possible to expand to a structure that can simultaneously probe multiple test objects or many test objects grown on the entire wafer at the same time because of the structure, the characteristics at the initial stage of the manufacturing process by combining with the main unit Inspection and aging processing can be performed at the wafer stage to detect and eliminate defective products, and prevent them from flowing to the subsequent lines. At the same time the efficiency of bad IC production line yield may greatly improve, the IC element demand has become more recently it is possible to cope with a so-called chip sales sold in the state of pellets.

【0002】[0002]

【従来の技術】複雑なICの製造工程を経ることによっ
て変形したウエハーを対象として高信頼度でプロービン
グを行うことは非常に困難であり、従来は主に長寸の金
属針などを用いた機構が用いられてきたが、この方法で
は1個の被検体の面積に比較してプロービング機構の占
める面積が非常に大きくなり、複数の被検体と同時にプ
ロービングを行う如く機構を構成することは非常に困難
で、まして多数の被検体を対象としたものは不可能であ
った。
2. Description of the Related Art Probing a wafer deformed by a complicated IC manufacturing process with high reliability is extremely difficult. Conventionally, a mechanism mainly using a long metal needle is used. However, in this method, the area occupied by the probing mechanism is much larger than the area of one subject, and it is very difficult to configure the mechanism to perform probing simultaneously with a plurality of subjects. Difficult, let alone targeting a large number of subjects.

【0003】また加速エージングは常温から125℃程
度の加熱・冷却サイクルによって行われるので、被検体
とプローバ機構との熱膨張係数に差があると接触を保つ
ことが不可能であり、殊に近年はウエハーが大型化し8
インチ程度のものが主流になっているので、その熱膨張
による寸法誤差は非常に大きくなり一度に多数の被検体
とプロービングを行うことが不可能であった。
Further, since accelerated aging is performed by a heating / cooling cycle from room temperature to about 125 ° C., it is impossible to maintain contact if there is a difference in thermal expansion coefficient between the subject and the prober mechanism, especially in recent years. Wafers are getting bigger 8
Since the size of inches is the mainstream, the dimensional error due to the thermal expansion is so large that it is impossible to perform probing with a large number of specimens at once.

【0004】[0004]

【発明が解決しようとする課題】この問題を解決するに
は、プロービング機構の単位占有面積が被検体の単位面
積の同等以下であり、かつICの製造工程中に発生する
半導体基板の歪にも拘らず被検体のパッド部と完全な接
触を保つことのできる構造を持ち、さらにエージング中
でも被検体と完全な接触を保つために被検体と同じ程度
の熱膨張係数を持つ探触部や機構が必要になる。
To solve this problem, the unit occupying area of the probing mechanism is equal to or less than the unit area of the object to be tested, and the distortion of the semiconductor substrate generated during the IC manufacturing process is also solved. Regardless of having a structure that can maintain complete contact with the pad of the subject, and even with aging, there is a probe and mechanism with the same coefficient of thermal expansion as the subject in order to maintain complete contact with the subject. You will need it.

【0005】[0005]

【課題を解決するための手段】前記の課題を解決するに
は、従来から用いられてきた金属針などによる構造を止
め、1個のIC素子の面積に対するプロービング機構の
占有面積との比率が同等以下で、かつICの製造工程中
に発生する半導体基板の歪にも拘らずパッド部と完全な
接触を保つのに必要な可 性を有する探触部を持ったプ
ローバを開発することが必要である。
In order to solve the above-mentioned problems, the structure of a conventionally used metal needle or the like is stopped, and the ratio of the area occupied by the probing mechanism to the area of one IC element is equal. It is necessary to develop a prober with a probe section that has the possibility of maintaining the perfect contact with the pad section in spite of the following distortion of the semiconductor substrate that occurs during the IC manufacturing process. is there.

【0006】本発明者は前記の課題を解決すベく種々検
討した結果、シリコンなどの半導体やガラス、セラミッ
クあるいは絶縁被膜を施した金属などの如く、応力に対
して復元性が良く熱膨張率の小さい材料から成るプロー
バ基板上に導電体被膜あるいは導電層より成る電気回路
を形成し、また該プローバ基板を加工して被検体である
半導体基板表面に形成されたIC(半導体集積回路)素
子と正確に対応する配置や寸法を有する櫛歯状部分とを
設け、各櫛歯先端の前記電気回路上に金属の凸部を形成
して前記被検体のパッド部との接点と成し、さらに該櫛
歯状部分やその附近に必要な可 性を持たせるために、
厚さ、寸法、形状、組成、性状を変えるなどの手段を講
じて成る探触部を被検体の配列と整合するピッチで複数
組備えたことにより、複数被検体とのプロービングを同
時に行うことが可能である如き構造とした。
As a result of various studies to solve the above-mentioned problems, the present inventor has found that the semiconductors such as semiconductors such as silicon, glass, ceramics, metal with an insulating coating, etc., have good resilience to stress and the coefficient of thermal expansion. And an IC (semiconductor integrated circuit) element formed on the surface of a semiconductor substrate, which is an object to be inspected, by forming an electric circuit composed of a conductor coating or a conductive layer on a prober substrate made of a small material Providing a comb-tooth-shaped portion having an exact corresponding arrangement and dimensions, forming a metal convex portion on the electric circuit at the tip of each comb-tooth to form a contact with the pad portion of the subject, and further In order to give the comb-shaped part and its surroundings the necessary flexibility,
Probing with multiple subjects can be performed at the same time by providing multiple sets of probe parts that are formed by taking measures such as changing thickness, size, shape, composition, and properties at a pitch that matches the array of subjects. The structure was made as possible.

【0007】またエージングの加熱・冷却サイクル中に
も被検体を育成してあるウエハーとの接触を保持するに
はプローバ基板の材料としてウエハーと略同じ熱膨張係
数を有するものを用いる必要があるので、ガラスやセラ
ミックまたは半導体などの材料によってプローバ基板を
製作し、さらに必要であれば該熱膨張係数に近い金属材
料などから成る構造体を裏付けすることによって強度増
加を図る如き構造や、さらにはプローバ基板の材料とし
てウエハーと同様の結晶方位を持つ半導体基板を用い、
探触部や配線構造などを形成する場合に結晶方向をウエ
ハーと揃えることにより、温度による寸法の熱膨張・収
縮や歪などにより生ずるプローバ基板上の接点と被検体
パッド部との位置誤差を減少させ得ることを創案した。
Further, in order to maintain contact with the wafer on which the specimen is grown even during the heating / cooling cycle of aging, it is necessary to use a material having a thermal expansion coefficient substantially the same as that of the wafer as the material of the prober substrate. , A structure in which a prober substrate is made of a material such as glass, ceramics, or a semiconductor, and if necessary, a structure made of a metal material having a coefficient of thermal expansion close to the backing is used to increase the strength. Using a semiconductor substrate with the same crystal orientation as the wafer as the material of the substrate,
By aligning the crystal direction with the wafer when forming the probe or wiring structure, the position error between the contact point on the prober substrate and the test object pad caused by thermal expansion / contraction or distortion of the dimension due to temperature is reduced. I devised what can be done.

【0008】[0008]

【作用】一般に、シリコンなどの半導体やガラス、ある
いはセラミックなどの材料において厚みが大きいものは
外部応力に対して割れ易いが、薄くなるに連れてかなり
湾曲させても割れ難くなることは周知の通りであり、従
って前記材料から成る基板を櫛歯状に加工し、かつ該櫛
歯状部分またはその附近の厚さ、寸法、形状、組成、性
状を変えるなどの手段により、プロービングの目的に適
した可 性を持つように設定することができ、さらに熱
膨張係数の小さな金属に絶縁被膜を施したものなども同
様な性質を与えることができる。
In general, semiconductors such as silicon, glass, or ceramics having a large thickness are easily cracked by external stress, but as it becomes thinner, it becomes more difficult to break even if it is bent considerably. Therefore, it is suitable for the purpose of probing by processing the substrate made of the above material into a comb shape and changing the thickness, size, shape, composition or property of the comb shape part or its vicinity. It can be set to have a possibility, and a metal having a small coefficient of thermal expansion coated with an insulating film can be given similar properties.

【0009】また熱膨張の問題に関しては、プローバ基
板や機構を被検体を育成してある半導体基板と略同じ熱
膨張係数で作成するか、さらに必要に応じてプローバ基
板に該半導体基板と略同じ熱膨張係数を有する材料から
成る構造体を裏付けすることなどによって熱膨張係数の
補正と強度増加を図ることができ、また精密に補正を行
うには前記プローバ基板として被検体と同様の結晶方位
を持つ半導体基板を用い、さらに前記探触部や電気配線
などの形成方向を被検体の結晶方向と揃えることによ
り、温度による寸法の熱膨張収縮や歪などにより生ずる
プローバの接点と被検体パッド部との位置誤差を減少さ
せることができる。
Regarding the problem of thermal expansion, a prober substrate or mechanism is formed with a thermal expansion coefficient substantially the same as that of the semiconductor substrate on which the subject is grown, or if necessary, the prober substrate is substantially the same as the semiconductor substrate. The coefficient of thermal expansion can be corrected and the strength can be increased by backing a structure made of a material having a coefficient of thermal expansion, and the same crystal orientation as that of the subject is used as the prober substrate for accurate correction. By using a semiconductor substrate having, by further aligning the formation direction of the probe portion and the electric wiring with the crystal direction of the subject, the prober contact point and the subject pad portion caused by thermal expansion and contraction or distortion of dimensions due to temperature It is possible to reduce the position error of.

【0010】[0010]

【実施例】本発明は、半導体基板表面に形成されたIC
(半導体集積回路)素子を被検体とし、その特性検査や
エージングを目的とするエージングテスタ装置(以下本
体装置と称する)に付属し、当該被検体のパッド部に高
信頼性を以て接触するプローバに関するものである。
EXAMPLE The present invention is an IC formed on the surface of a semiconductor substrate.
(Semiconductor integrated circuit) A prober attached to an aging tester device (hereinafter, referred to as a main body device) for the purpose of characteristic inspection and aging of a device as a subject, and which comes into contact with the pad portion of the subject with high reliability Is.

【0011】すなわち、シリコンなどの半導体やガラス
あるいはセラミック、あるいは絶縁被膜を施した金属な
どの如く応力に対して復元性が良く熱膨張率の小さい材
料から成るプローバ基板上に導電体被膜あるいは導電層
より成る電気回路を形成し、また該プローバ基板を加工
して被検体である半導体基板表面に形成されたIC(半
導体集積回路)素子のパッド部に正確に対応する配置や
寸法を有する櫛歯状部分とを設け、各櫛歯先端の前記電
気回路上に金属の凸部を形成して前記被検体のパッド部
との接点と成し、さらに該櫛歯状部分やその附近に必要
な可 性を持たせるために、厚さ、寸法、形状、組成、
性状を変えるなどの手段を講じて成る探触部を被検体の
配列と整合するピッチで複数組備えたことを特徴とする
もので、このような構成により複数被検体とのプロービ
ングを同時に行うことができる。
That is, a conductor coating or a conductive layer is formed on a prober substrate made of a material such as a semiconductor such as silicon, glass or ceramic, or a metal having an insulating coating, which has a good resilience to stress and a small coefficient of thermal expansion. A comb-tooth shape having an arrangement and dimensions accurately corresponding to a pad portion of an IC (semiconductor integrated circuit) element formed on the surface of a semiconductor substrate which is a subject by processing the prober substrate And a metal convex portion is formed on the electric circuit at the tip of each comb tooth to form a contact point with the pad portion of the subject, and there is a possibility that the comb tooth portion and its vicinity may be necessary. Thickness, size, shape, composition,
It is characterized by having a plurality of sets of probe sections formed by taking measures such as changing properties, at a pitch that matches the arrangement of the subject, and with such a configuration, probing with a plurality of subjects at the same time can be performed. You can

【0012】この場合に探触部の櫛歯状部分の構造や加
工は写真法と化学処理により、あるいは放電加工などに
より行われ、また近年精度が高くなってきた機械加工も
併用することができるが、半導体基板を放電加工する場
合には予め不純物濃度を高くして導電性を持たせておく
必要がある。
In this case, the structure and processing of the comb-teeth portion of the probe portion are carried out by a photographic method and a chemical treatment, or by electric discharge machining or the like, and mechanical processing which has become more accurate in recent years can be used together. However, in the case of electric discharge machining of a semiconductor substrate, it is necessary to increase the impurity concentration in advance to give conductivity.

【0013】またプローバ基板上の導電被膜あるいは導
電層は、金属などの導体を鍍金、塗布、貼付あるいは蒸
着などの手段によって形成することができるが、該基板
が半導体などの場合には該基板表面に不純物拡散などを
行うことによっても生成することができる。
The conductive coating or conductive layer on the prober substrate can be formed by plating a conductor such as metal with a means such as plating, coating, pasting or vapor deposition. It can also be produced by diffusing impurities.

【0014】そして探触部先端部の接点は、例えばプリ
ント基板やIC製造などの関連技術または鍍金や電鋳技
術などを応用することにより形成可能であり、その場合
には探触部先端にレジストによって基本パターンを形成
し、その後に摩耗に強い硬度の高い材質である白金やロ
ジウム、ニッケルなどの金属を厚手に鍍金するなどの手
段よって形成するか、それらの金属箔を貼付した後にフ
ォトレジスタなどを用いた写真法などの手段により形成
する。
The contact at the tip of the probe can be formed by applying a related technique such as printed circuit board or IC manufacturing, or plating or electroforming technique. To form a basic pattern, and then form a metal such as platinum, rhodium, or nickel, which is a material with high hardness against abrasion, by thick plating, or form a photoresist after attaching the metal foil. It is formed by a method such as a photographic method using.

【0015】図1は本発明の実施例で、プローバ基板1
には被検体のパッド数に対応した配置と歯数とを持つ櫛
歯状部分を4辺に持つ探触部が4組形成され、櫛歯を構
成する夫々のリード2は図2に示す如く導電層による回
路3と接点4を有している。
FIG. 1 shows a prober substrate 1 according to an embodiment of the present invention.
Is formed with four sets of probe portions each having a comb-tooth-shaped portion on four sides having an arrangement corresponding to the number of pads of the subject and the number of teeth, and each lead 2 constituting the comb-tooth is as shown in FIG. It has a circuit 3 made of a conductive layer and a contact 4.

【0016】該回路3はスルーホール構造3’によりプ
ローバ基板1上に集合してデータバスやアドレスバスな
どを構成するが、バスバッファ5を挿入しバスの強化を
図ったりデコーダ6などを使用し外部の探触部指定コー
ドをデコードし、夫々の探触部を選択指定することによ
りバスを共通化することができると共に、回路3と他の
外部回路との接続手段7に係わる配線数を減少させ得る
こともできる。
The circuit 3 is assembled on the prober substrate 1 by the through-hole structure 3'to form a data bus, an address bus and the like. A bus buffer 5 is inserted to strengthen the bus and a decoder 6 is used. By decoding the external probe section designation code and selecting and designing each probe section, the bus can be made common, and the number of wires related to the connecting means 7 between the circuit 3 and another external circuit can be reduced. It can also be done.

【0017】プローバ基板1全体の強度あるいは剛性を
保つのはかなりの厚みが必要であるが、リード2はその
厚さ、寸法、形状、組成、性状を変えるなどの手段によ
り被検体に係わるウエハーの歪による凹凸などに追従で
きる程度の可 性を持たせる必要があり、より可 性が
必要な場合などにはリード2の附近にも同じような手段
を用いることもできる。
Although a considerable thickness is required to maintain the strength or rigidity of the entire prober substrate 1, the leads 2 are formed on the wafer related to the subject by means of changing the thickness, size, shape, composition and properties of the leads 2. It is necessary to have a possibility to follow unevenness due to strain, and if more possibility is required, similar means can be used near the lead 2.

【0018】さらに全体の強度を高める場合にはプロー
バ基板1の材料と略同じ熱膨張係数を有する材料から成
る基板や構造体などをプローバ基板1に裏付けすること
によって強度増加を図ることもできる。
In order to further increase the overall strength, it is possible to increase the strength by backing the prober substrate 1 with a substrate or a structure made of a material having substantially the same thermal expansion coefficient as the material of the prober substrate 1.

【0019】また近年はICの集積密度が高まり、複雑
なパッド配列形状を持つものやパッド数の多いIC素子
が多くなってきているが、このような場合には図3に例
示した如く櫛歯状部分を交互に配置して探触部を構成す
るなど櫛歯状部分の配置を目的に合わせて行なうことよ
り対応可能である。
In recent years, the density of integrated ICs has increased, and the number of IC elements having a complicated pad arrangement shape and a large number of pads has been increasing. In such a case, as shown in FIG. This can be dealt with by arranging the comb-tooth-shaped portions according to the purpose, such as arranging the tooth-shaped portions alternately to form a probe.

【0020】プローバ基板1の材料としてはシリコンな
どの半導体やガラス、セラミックあるいは絶縁被膜を施
した熱膨張率の小さな金属などを適用することができる
が、半導体を用いた場合には表面にIC作成と同様の手
段により導電層による回路3を作成することにより密度
の高いものとすることができると共に、さらに前記プロ
ーバ基板1として被検体に係わるウエハーと同様の結晶
方位を持つ半導体基板を用い、その結晶方向をウエハー
と揃えて配備することによりX方向およびY方向に関し
て熱膨張・収縮や歪などをキャンセルすることができ、
被検体のパッド部と接点4との位置ずれを僅少にするこ
とができる。
As the material of the prober substrate 1, a semiconductor such as silicon, glass, ceramic, or a metal having an insulating coating and a small coefficient of thermal expansion can be applied. When a semiconductor is used, an IC is formed on the surface. It is possible to make the density high by forming the circuit 3 by the conductive layer by the same means as described above, and further, as the prober substrate 1, a semiconductor substrate having a crystal orientation similar to that of the wafer to be inspected is used. By arranging the crystal orientation in line with the wafer, it is possible to cancel thermal expansion / contraction and distortion in the X and Y directions.
It is possible to minimize the positional deviation between the pad portion of the subject and the contact 4.

【0021】またプローバ基板1の材料としては被検体
と略同じ熱膨張係数と復元性や可性を有する金属などを
用い、その表面に絶縁体を塗布するか絶縁薄膜を貼付す
るなどの手段により絶縁被膜を作ることによって、回路
3に係わる浮遊容量が大きくなり動作速度が低下するこ
とや加工し難い等の欠点が生ずるものゝ前記の諸材料と
略同等に扱うことができる。
Further, as the material of the prober substrate 1, a metal or the like having substantially the same coefficient of thermal expansion, resilience and flexibility as the subject is used, and the surface thereof is coated with an insulator or an insulating thin film is applied. By forming the insulating film, the stray capacitance related to the circuit 3 becomes large and the operating speed is lowered, and there are drawbacks such as difficulty in processing.

【0022】実際のウエハーに関する諸特性の測定やエ
ージング時には、ウエハーに係わる被検体のパッド部と
プローバ基板1に係わる接点4との位置合せを行ったの
ちに、プローバ基板1をウエハーに圧接することによっ
て被検体のパッド部と接点4との接触を行うが、圧接圧
力がさらに大きくなった場合には図4に示す如く該プロ
ーバ基板1の探触部以外の受圧部1’がウエハー8に係
わる被検体のパッド部8’以外の部分に圧接することに
よって探触部に掛る圧力を制限し探触部の破壊を防ぐこ
とができる。
During the actual measurement and aging of various characteristics of the wafer, the pad portion of the object to be inspected on the wafer and the contact point 4 to the prober substrate 1 are aligned, and then the prober substrate 1 is pressed against the wafer. The pad portion of the subject is brought into contact with the contact 4 by means of the probe 8. When the pressure contact pressure is further increased, the pressure receiving portion 1'other than the probe portion of the prober substrate 1 is related to the wafer 8 as shown in FIG. It is possible to limit the pressure applied to the probe portion and prevent the probe portion from being broken by pressing the portion other than the pad portion 8 ′ of the subject.

【0023】この場合、受圧部1’を絶縁層や絶縁膜あ
るいは弾性膜で形成するか、それらを受圧部1’と組合
わせるなどの手段により、被検体の構造や回路3に影響
を及ぼさないように保護することも可能である。
In this case, the structure of the subject and the circuit 3 are not affected by means such as forming the pressure receiving portion 1'with an insulating layer, an insulating film or an elastic film, or combining them with the pressure receiving portion 1 '. It is also possible to protect it.

【0024】またプロービングを行う際に必要な前記被
検体のパッド部8’とプローバ基板1に係わる接点4と
の位置合せについては、通常光学的な手段により行われ
るのでプローバ基板1が透明であると便利である。
The alignment of the pad portion 8'of the subject and the contact 4 relating to the prober substrate 1 necessary for performing probing is usually performed by optical means, so that the prober substrate 1 is transparent. And convenient.

【0025】本発明においては、前記プローバ基板1を
可視光あるいは紫外線、赤外線などに透明なガラスやセ
ラミックなどの材料で構成することが可能である上に探
触部附近に空隙が存在するので、それらを利用すること
によって容易に位置合せを行うことができ、さらに必要
であれば図3に示した如く回路3以外の場所に開口部9
を設けることにより目的を達することができる。
In the present invention, the prober substrate 1 can be made of a material such as glass or ceramic which is transparent to visible light, ultraviolet rays, infrared rays and the like, and since there is a void near the probe portion, By using them, the alignment can be easily performed, and if necessary, the opening 9 can be formed in a place other than the circuit 3 as shown in FIG.
The purpose can be achieved by providing.

【0026】[0026]

【発明の効果】本発明によれば複数の被検体と同時にプ
ロービングが可能なので、これをウエハー全体に拡張す
ると共に本体装置をエージングと同時に特性検査も行え
るように構成することにより、ウエハーにIC素子を育
成した段階でのエージングと特性検査とを行い不良品を
発見・駆除することが可能なので、不良品が後のライン
に流れることを防止することができ、特に歩留りの悪い
ICの生産ラインの効率を大きく向上させ得ると同時に
近年需要が多くなってきたIC素子をペレットの状態で
販売する所謂チップセールスにも対応することができ、
また最終工程においては動作チェックのみを行えば良い
ので工程が非常に簡素化され、製品コストの低下に継が
るという大きな効用が期待できる。
According to the present invention, since it is possible to perform probing simultaneously with a plurality of specimens, it is possible to extend this over the entire wafer and at the same time to configure the main body device so as to perform aging and characteristic inspection at the same time. Since defective products can be found and eliminated by performing aging and characteristic inspection at the stage of growing the defective products, it is possible to prevent defective products from flowing to the subsequent line, and especially for the production line of ICs with poor yield. The efficiency can be greatly improved, and at the same time, it is possible to deal with so-called chip sales in which IC elements, which are in high demand in recent years, are sold in a pellet state.
Further, since only the operation check needs to be performed in the final process, the process can be greatly simplified, and it is expected to have a great effect of reducing the product cost.

【図面の簡単な説明】[Brief description of drawings]

【図1】プローバ基板の構成例を示す表面図である。FIG. 1 is a front view showing a configuration example of a prober substrate.

【図2】探触部の構成例を示す裏面図である。FIG. 2 is a back view showing a configuration example of a probe.

【図3】リードの構造例を示す断面図である。FIG. 3 is a cross-sectional view showing a structural example of a lead.

【図4】被検体と探触部の圧接状態を示す断面図であ
る。
FIG. 4 is a cross-sectional view showing a pressed state of a subject and a probe.

【符号の説明】[Explanation of symbols]

1 プローバ基板 7 接続手段 2 リード 8 ウエハー 3 回路 9 開口部 4 接点 5 バスバッファ 6 デコーダ 1 Prober Board 7 Connection Means 2 Lead 8 Wafer 3 Circuit 9 Opening 4 Contact 5 Bus Buffer 6 Decoder

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】シリコンなどの半導体やガラス、セラミッ
クあるいは絶縁被膜を施した金属などの如く応力に対し
て復元性が良く熱膨張率の小さい材料から成るプローバ
基板上に導電体被膜あるいは導電層より成る電気回路を
形成し、また該プローバ基板を加工して被検体である半
導体基板表面に形成されたIC(半導体集積回路)素子
のパッド部に正確に対応する配置や寸法を有する櫛歯状
部分を設けると共に、各櫛歯先端の前記電気回路上に金
属の凸部を形成して前記被検体のパッド部との接点と成
し、さらに該櫛歯状構造やその附近に必要な可 性を持
たせるために、厚さ、寸法、形状、組成、性状を変える
などの手段を講じて成る探触部を被検体の配列と整合す
るピッチで複数組備えたことにより、複数被検体とのプ
ロービングを同時に行うことが可能なように構成したこ
とを特徴とするマイクロプローバ
1. A conductor coating or a conductive layer on a prober substrate made of a material such as a semiconductor such as silicon, glass, ceramic, or a metal with an insulating coating, which has a good resilience to stress and a small coefficient of thermal expansion. A comb-tooth-shaped portion having an arrangement and dimensions accurately corresponding to a pad portion of an IC (semiconductor integrated circuit) element formed on the surface of a semiconductor substrate which is a subject by processing the prober substrate In addition to forming a metal convex portion on the electric circuit at the tip of each comb tooth to form a contact point with the pad portion of the object to be examined, the possibility of forming the comb tooth-shaped structure and its vicinity can be improved. Probing with a plurality of subjects by providing a plurality of pairs of probe sections with a pitch that matches the arrangement of the subjects by taking measures such as changing the thickness, size, shape, composition, and properties in order to have At the same time A microprober characterized by being configured to be able to perform
【請求項2】パッド数の多いIC素子に対応するため
に、櫛歯状部分を対向状や交互状に配置したことを特徴
とする請求項1記載のマイクロプローバ
2. The microprober according to claim 1, wherein the comb-tooth-shaped portions are arranged facing each other or alternately in order to correspond to an IC element having a large number of pads.
【請求項3】前記プローバ基板の材料としてシリコンな
どの半導体を用い、その表面にIC作成と同様の手段に
より絶縁層や電気回路を作成したことを特徴とする請求
項1記載のマイクロプローバ
3. The microprober according to claim 1, wherein a semiconductor such as silicon is used as a material for the prober substrate, and an insulating layer and an electric circuit are formed on the surface thereof by the same means as that for forming an IC.
【請求項4】前記プローバ基板が圧出され前記接点と前
記被検体のパッド部とが充分に接触したのち更に圧出さ
れた場合には、該プローバ基板の探触部以外の部分に設
けた受圧部が被検体の表面に接触することによって圧力
を制限し探触部を破壊から護るように構成したこと、ま
た被検体の構造や回路に影響を及ぼすことを避けるため
に、受圧部に緩衝層や絶縁層あるいは絶縁膜などを形成
したことを特徴とする請求項1記載のマイクロプローバ
4. When the prober substrate is pressed out and the contact point and the pad portion of the subject are sufficiently contacted and then further pressed out, the prober substrate is provided on a portion other than the probe portion. The pressure sensing part is configured to limit the pressure by contacting the surface of the subject and protect the probe from damage, and the pressure sensing part is buffered to avoid affecting the structure and circuit of the subject. The microprober according to claim 1, wherein a layer, an insulating layer, an insulating film, or the like is formed.
【請求項5】前記プローバ基板として被検体と同様の材
料と結晶方位を持つ半導体板を用い、さらに前記探触部
や配線構造などを形成する場合に結晶方向を被検体と揃
えることにより、温度による寸法の熱膨張収縮や歪など
により生ずるプローバの接点と被検体パッド部との位置
誤差を減少させる如く構成したことを特徴とする請求項
1記載のマイクロプローバ
5. A semiconductor plate having the same material and crystal orientation as that of the object to be inspected is used as the prober substrate, and the crystal orientation is aligned with that of the object to be inspected or wiring structure is formed. 2. The microprober according to claim 1, wherein the position error between the contact point of the prober and the object pad portion caused by the thermal expansion / contraction or distortion of the dimension due to is reduced.
【請求項6】前記プローバ基板の表面に作成した電気回
路に、エンコーダやデコーダの手法を応用することによ
って、プローバ基板と他の回路との接続手段の配線数を
減少させたことを特徴とする請求項1記載のマイクロプ
ローバ
6. The method of applying an encoder or a decoder to an electric circuit formed on the surface of the prober board, thereby reducing the number of wirings of a connecting means between the prober board and another circuit. The microprober according to claim 1.
【請求項7】プロービングを行う際に被検体との位置合
せを行い易くするために、前記プローバ基板を可視光あ
るいは紫外線、赤外線などに透明なガラスやセラミック
などの材料で構成し、あるいは必要な場所に開口部を設
けるなどの手段を講じたことを特徴とする請求項1記載
のマイクロプローバ
7. The prober substrate is made of a material such as glass or ceramic which is transparent to visible light, ultraviolet rays, infrared rays, or the like, or is necessary for facilitating alignment with a subject during probing. The microprober according to claim 1, wherein a means such as an opening is provided at a place.
JP8772193A 1993-03-10 1993-03-10 Micro prober Pending JPH06268035A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8772193A JPH06268035A (en) 1993-03-10 1993-03-10 Micro prober
EP94103001A EP0615131A1 (en) 1993-03-10 1994-02-28 Prober for semiconductor integrated circuit element wafer
US08/547,383 US5555422A (en) 1993-03-10 1995-10-24 Prober for semiconductor integrated circuit element wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8772193A JPH06268035A (en) 1993-03-10 1993-03-10 Micro prober

Publications (1)

Publication Number Publication Date
JPH06268035A true JPH06268035A (en) 1994-09-22

Family

ID=13922780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8772193A Pending JPH06268035A (en) 1993-03-10 1993-03-10 Micro prober

Country Status (1)

Country Link
JP (1) JPH06268035A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722478A (en) * 1993-06-30 1995-01-24 Kawasaki Steel Corp Probe test apparatus and probe testing method
US6075373A (en) * 1996-05-31 2000-06-13 Tokyo Electron Limited Inspection device for inspecting a semiconductor wafer
JP2006510028A (en) * 2002-12-16 2006-03-23 フォームファクター,インコーポレイテッド Apparatus and method for limiting overtravel in a probe card assembly

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722478A (en) * 1993-06-30 1995-01-24 Kawasaki Steel Corp Probe test apparatus and probe testing method
US6075373A (en) * 1996-05-31 2000-06-13 Tokyo Electron Limited Inspection device for inspecting a semiconductor wafer
JP2006510028A (en) * 2002-12-16 2006-03-23 フォームファクター,インコーポレイテッド Apparatus and method for limiting overtravel in a probe card assembly

Similar Documents

Publication Publication Date Title
JP2006250579A (en) Inspection device and characteristic adjusting method of humidity sensor
JP2002110751A (en) Apparatus for inspecting semiconductor integrated circuit device, and its manufacturing method
JP2000338131A (en) Probe for probe card and manufacture thereof
JPH11174118A (en) Probe card for inspecting integrated circuit chip
JP2004288672A (en) Method of manufacturing semiconductor integrated circuit device
JP2005300545A5 (en)
JP2010276541A (en) Thin-film probe sheet, method of manufacturing the same, probe card, and semiconductor chip inspecting apparatus
JP5024861B2 (en) Probe card
JPH10111315A (en) Probe card and testing device using the same
JP2003297887A (en) Manufacturing method for semiconductor integrated circuit device and semiconductor inspection device
JPH06168991A (en) Inspecting method for multi-probing semiconductor
JPH06268035A (en) Micro prober
JP2004274010A (en) Prober
JP2665171B2 (en) Probe card and method of using the same
JP3267321B2 (en) Semiconductor chip socket
JPH0774216A (en) Prober
JP3346279B2 (en) Contact probe, probe device having the same, and method of manufacturing contact probe
JP2004301807A (en) Checking probe card
JPH01295185A (en) Inspection device
JP2544186B2 (en) Probe device
JPH11121553A (en) Probe card for wafer batch type measurement inspection and inspection method of semiconductor device using the probe card
JPH1123668A (en) Defective wiring inspection circuit
JP2003075469A (en) Evaluation method in wafer level for probe card and semiconductor element
JPH10221369A (en) Contact probe and its manufacture, and probe apparatus having contact probe
JP4406218B2 (en) Inspection device provided with probe, and positioning method by positioning mechanism of inspection device provided with probe