JPH06264230A - Target material for production of thin film having high dielectric and its production - Google Patents
Target material for production of thin film having high dielectric and its productionInfo
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- JPH06264230A JPH06264230A JP7757193A JP7757193A JPH06264230A JP H06264230 A JPH06264230 A JP H06264230A JP 7757193 A JP7757193 A JP 7757193A JP 7757193 A JP7757193 A JP 7757193A JP H06264230 A JPH06264230 A JP H06264230A
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- powder
- oxide
- thin film
- titanium
- target material
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、スパッタリング法に
より基板表面に高誘電体薄膜を形成する際に用いられる
ターゲット材およびその製造法に関するものであり、特
に直流スパッタリング法により基板表面に高誘電体薄膜
を形成することができるターゲット材およびその製造法
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a target material used for forming a high dielectric thin film on a substrate surface by a sputtering method and a method for producing the same, and particularly to a high dielectric material on a substrate surface by a DC sputtering method. The present invention relates to a target material capable of forming a thin film and a manufacturing method thereof.
【０００２】[0002]
【従来の技術】従来、組成が（ＢａｘＳｒ1-x ）ＴｉＯ
3 （但し０＜ｘ＜１）でありペロブスカイト構造を有す
る複合チタン酸化合物の薄膜は誘電体薄膜として優れた
特性を有することおよびこの（ＢａｘＳｒ1-x ）ＴｉＯ
3 （但し、０＜ｘ＜１）複合チタン酸化合物からなる誘
電体薄膜はスパックリング装置にターゲット材を設置
し、高周波スパッタリング法により作製されていること
は知られている。2. Description of the Related Art Conventionally, the composition is (Ba x Sr 1-x ) TiO 2.
3 (where 0 <x <1) and the composite titanate compound thin film having a perovskite structure has excellent characteristics as a dielectric thin film, and this (Ba x Sr 1-x ) TiO 2
It is known that a dielectric thin film made of 3 (where 0 <x <1) composite titanate compound is produced by a high-frequency sputtering method in which a target material is installed in a sprinkling device.
【０００３】上記（ＢａｘＳｒ1-x ）ＴｉＯ3 （但し、
０＜ｘ＜１）薄膜を作製するためのターゲット材は、従
来、ＢａＣＯ3 粉末、ＳｒＣＯ3 粉末およびＴｉＯ2 粉
末を配合したのちボールミルにて湿式混合し、乾燥した
のち大気中で温度：１２００℃、４時間保持の条件で焼
成し、粉砕して粉末とし、この粉末をホットプレスする
ことにより製造されていた。The above (Ba x Sr 1-x ) TiO 3 (however,
0 <x <1) A target material for producing a thin film is conventionally mixed with BaCO 3 powder, SrCO 3 powder and TiO 2 powder, wet-mixed in a ball mill, dried, and then in the air at a temperature of 1200 ° C. It was manufactured by firing under the condition of holding for 4 hours, crushing into powder, and hot pressing this powder.
【０００４】このようにして製造されたターゲット材
は、（ＢａｘＳｒ1-x ）ＴｉＯ3 （但し、０＜ｘ＜１）
相を主相としているところから抵抗値が高く、そのため
スパッタリング法としては高周波スパッタリング法が用
いられていた。The target material manufactured in this manner is (Ba x Sr 1-x ) TiO 3 (where 0 <x <1)
Since the phase is the main phase, the resistance value is high, so that the high frequency sputtering method has been used as the sputtering method.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、高周波
スパッタリング法による成膜速度は通常１０オングスト
ローム／分と遅いために生産性が向上せず、この高周波
スパッタリング法で得られた薄膜組織は柱状であるため
にリーク電流が大きくパーティクルも多く、誘電体薄膜
として満足な特性は得られないという課題があった。However, since the film forming rate by the high frequency sputtering method is usually as low as 10 angstrom / min, the productivity cannot be improved, and the thin film structure obtained by this high frequency sputtering method is columnar. In addition, there was a problem that the leakage current was large and there were many particles, so that satisfactory characteristics could not be obtained as a dielectric thin film.
【０００６】[0006]
【課題を解決しようとする手段】そこで、本発明者等
は、成膜速度の速い直流スパッタリング法（成膜速度は
１０００オングストローム／分以上と言われている）を
用いて効率よく特性の優れた複合チタン酸化合物からな
る誘電体薄膜を得るべく研究を行った結果、ＢａとＳｒ
の複合酸化物の周囲を酸化チタン（ＴｉＯ2-z 、但し、
０≦ｚ＜２）が包囲している被覆粒子または上記被覆粒
子とＴｉＯ2 粒子が金属Ｔｉ素地中に均一分散している
組織を有するターゲット材は、素地が金属Ｔｉであると
ころから高導電性を有し、したがって直流スパッタリン
グ装置により成膜を行なうことができ、得られた誘電体
薄膜の特性は従来よりも優れているという知見を得たの
である。Therefore, the inventors of the present invention used a direct current sputtering method with a high film formation rate (it is said that the film formation rate is 1000 angstroms / minute or more) to provide excellent characteristics efficiently. As a result of research to obtain a dielectric thin film composed of a composite titanate compound, Ba and Sr
Titanium oxide (TiO 2-z ,
A target material having a structure in which 0 ≦ z <2) is surrounded or a structure in which the above-mentioned coated particles and TiO 2 particles are uniformly dispersed in a metal Ti base material has high conductivity because the base material is metal Ti. Therefore, it has been found that the film can be formed by a DC sputtering apparatus and the characteristics of the obtained dielectric thin film are superior to those of the conventional one.
【０００７】この発明は、かかる知見にもとづいてなさ
れたものであって、（１） ＢａとＳｒの複合酸化物の
周囲を酸化チタン（ＴｉＯ2-z 、但し、０≦ｚ＜２）が
包囲している被覆粒子が金属Ｔｉ素地中に均一分散して
いる組織を有するターゲット材、（２） 上記（１）の
材料の素地中に、さらに酸化チタン粉末が均一分散して
いる組織を有するターゲット材、（３） 上記（１）お
よび（２）のターゲット材の製造法、に特徴を有するも
のである。The present invention has been made on the basis of the above findings. (1) Titanium oxide (TiO 2−z , where 0 ≦ z <2) surrounds a complex oxide of Ba and Sr. Target material having a structure in which the coated particles are uniformly dispersed in the metal Ti matrix, (2) a target having a structure in which titanium oxide powder is further uniformly dispersed in the matrix of the material of (1) above Material, (3) The method for producing a target material according to (1) and (2) above, is characterized.
【０００８】この発明のターゲット材を製造するには、
まず、ＢａＯまたＢａＣＯ3 に対してＳｒＯまたはＳｒ
ＣＯ3 を混合し、大気中で焼成して（ＢａｘＳｒ1-z ）
Ｏ（但し、０＜ｘ＜１）という複合酸化物粉末を製造す
る。この（ＢａｘＳｒ1-x ）Ｏ（但し、０＜ｘ＜１）は
安定な酸化物である。この（ＢａｘＳｒ1-x ）Ｏ（但
し、０＜ｘ＜１）粉末をＴｉ粉末と混合したのち、真空
雰囲気中でホットプレスし、加工して製造すると、（Ｂ
ａｘＳｒ1-x ）Ｏ（但し、０＜ｘ＜１）の周囲を酸化チ
タン（ＴｉＯ2-z 、但し、０≦ｚ＜２）で包囲している
複合粒子がＴｉ素地中に均一分散している組織を有する
ホットプレス焼結体が得られ、このホットプレス焼結体
を加工してターゲット材にする。To manufacture the target material of the present invention,
First, for BaO or BaCO 3 , SrO or Sr
CO 3 is mixed and baked in the atmosphere (Ba x Sr 1-z )
A composite oxide powder of O (however, 0 <x <1) is manufactured. This (Ba x Sr 1-x ) O (where 0 <x <1) is a stable oxide. When this (Ba x Sr 1-x ) O (however, 0 <x <1) powder is mixed with Ti powder, it is hot pressed in a vacuum atmosphere and processed to produce (B
a x Sr 1-x ) O (where 0 <x <1) is surrounded by titanium oxide (TiO 2-z , where 0 ≦ z <2), and the composite particles are uniformly dispersed in the Ti substrate. A hot-press sintered body having a texture is obtained, and this hot-press sintered body is processed into a target material.
【０００９】このようにして得られたターゲット材は直
流スパッタリング法で（ＢａｘＳｒ1-x ）ＴｉＯ3 （但
し、０＜ｘ＜１）高誘電体薄膜を製造することができる
だけでなく、高周波スパッタリング法でも製造すること
ができる。The target material thus obtained can not only produce a (Ba x Sr 1-x ) TiO 3 (where 0 <x <1) high dielectric thin film by direct current sputtering, It can also be manufactured by a sputtering method.
【００１０】上記ターゲット材を用いて（ＢａｘＳｒ
1-x ）ＴｉＯ3 （但し、０＜ｘ＜１）高誘電体薄膜を製
造するには、酸素を含んだ雰囲気中でスパッタリングす
る必要がある。このスパッタリング雰囲気中の酸素を減
少させるために、上記ターゲット材の素地中にＴｉＯ2
粉末を含有させるのが好ましい。ＴｉＯ2 粉末含有ター
ゲット材は、（ＢａｘＳｒ1-x ）Ｏ（但し、０＜ｘ＜
１）粉末、Ｔｉ粉末およびＴｉＯ2 粉末を混合し、ホッ
トプレスしたのち加工することにより得られ、（Ｂａｘ
Ｓｒ1-x ）Ｏ（但し、０＜ｘ＜１）の周囲を酸化チタン
で（ＴｉＯ2-z 、但し、０≦ｚ＜２）包囲している複合
粒子およびＴｉＯ2 粒子がＴｉ素地中に均一分散してい
る組織を有する。Using the above target material (Ba x Sr
In order to manufacture a 1-x ) TiO 3 (where 0 <x <1) high dielectric thin film, it is necessary to perform sputtering in an atmosphere containing oxygen. In order to reduce the oxygen in the sputtering atmosphere, TiO 2 was added to the base material of the target material.
It is preferable to include a powder. The target material containing TiO 2 powder is (Ba x Sr 1-x ) O (where 0 <x <
1) Powder, Ti powder and TiO 2 powder are mixed, hot pressed and processed to obtain (Ba x
Sr 1-x ) O (where 0 <x <1) is surrounded by titanium oxide (TiO 2−z , where 0 ≦ z <2) around the composite particles and TiO 2 particles in the Ti matrix. It has a uniformly dispersed structure.
【００１１】[0011]
実施例１ Ｎ2 雰囲気中のグローブボックス内でＳｒＯ粉末（添川
理化学製、純度３Ｎ）およびＢａＯ粉末（添川理化学
製、純度３Ｎ）をボールミル用ポット（容積：５００m
l）に、ＺｒＯ2 ボール（径：５mmφ）５００ｇと共に
入れ、１０時間混合粉砕し、得られた混合粉末をアルミ
ナ製ルツボに移し、電気炉内で温度：１２００℃、４時
間、大気雰囲気にて保持することにより表１に示される
組成の複合酸化物（ＢａｘＳｒ1-x ）Ｏを作製した。Example 1 A ball mill pot (volume: 500 m) of SrO powder (manufactured by Soegawa Rikagaku, purity 3N) and BaO powder (manufactured by Soegawa Rikagaku, purity 3N) in a glove box in an N 2 atmosphere.
l) together with 500 g of ZrO 2 balls (diameter: 5 mmφ) and mixed and pulverized for 10 hours, and the obtained mixed powder is transferred to an alumina crucible and heated in an electric furnace at a temperature of 1200 ° C. for 4 hours in an air atmosphere. By holding, a composite oxide (Ba x Sr 1-x ) O having the composition shown in Table 1 was produced.
【００１２】この複合酸化物（ＢａｘＳｒ1-x ）Ｏを乳
鉢で粉砕し、次いてボールミル法により１０時間粉砕
し、平均粒径：８μｍの複合酸化物（ＢａｘＳｒ1-x ）
Ｏ粉末を作製し、この複合酸化物（ＢａｘＳｒ1-x ）Ｏ
粉末をＴｉ粉末（添川理化学製）に対して表１に示され
る割合となるように配合し、これをボールミルに装入し
て１０時間混合し、複合酸化物（ＢａｘＳｒ1-x ）Ｏ粉
末とＴｉ粉末の混合粉末を作製した。This composite oxide (Ba x Sr 1-x ) O was ground in a mortar and then ground by a ball mill method for 10 hours to obtain a composite oxide (Ba x Sr 1-x ) having an average particle size of 8 μm.
O powder was prepared, and this composite oxide (Ba x Sr 1-x ) O
The powder was blended with Ti powder (manufactured by Soekawa Rikagaku Co., Ltd.) in a ratio shown in Table 1, charged in a ball mill and mixed for 10 hours to obtain a composite oxide (Ba x Sr 1-x ) O. A mixed powder of powder and Ti powder was prepared.
【００１３】この複合酸化物（ＢａｘＳｒ1-x ）Ｏ粉末
とＴｉ粉末の混合粉末をグラファイトモールドに充填
し、温度：１２００℃、真空度：１０-3torr、圧力：１
５０kg／cm2 で２時間保持することによりホットプレス
を行ない、表面加工することにより直径：７．６４cmの
本発明ターゲット材１〜１３を作製した。A mixed powder of this composite oxide (Ba x Sr 1-x ) O powder and Ti powder was filled in a graphite mold, and the temperature was 1200 ° C., the degree of vacuum was 10 −3 torr, and the pressure was 1.
The target materials 1 to 13 of the present invention having a diameter of 7.64 cm were produced by hot pressing by holding at 50 kg / cm 2 for 2 hours and surface processing.
【００１４】これら本発明ターゲット材１〜１３の組織
を顕微鏡で観察したところ、複合酸化物（ＢａｘＳｒ
1-x ）Ｏの周囲を酸化チタンで包囲されている相がＴｉ
マトリックス中に島状に均一分散していた。When the structures of these target materials 1 to 13 of the present invention were observed with a microscope, a complex oxide (Ba x Sr) was obtained.
The phase surrounding 1-x ) O with titanium oxide is Ti
It was uniformly dispersed in an island shape in the matrix.
【００１５】さらに、本発明ターゲット材１〜１３につ
いて、直流四探針法で抵抗率を測定したのち抗折力を測
定し、これらの測定値を表１に示した。Further, with respect to the target materials 1 to 13 of the present invention, the resistivity was measured by the DC four-point probe method, and then the transverse rupture strength was measured. The measured values are shown in Table 1.
【００１６】[0016]
【表１】 この本発明ターゲット材１〜１３をＤＣ用スパッタ装置
に組み込み、 スパッタガス圧：１ｍtorr、 パワー ：５０ｗ、 雰囲気ガス組成：Ａｒ：Ｏ2 ＝１：１、 ターゲットと基板の距離：５０mm、 基板温度 ：５５０℃、 スパッタ時間 ：５分、 の条件で厚さ：５０００オングストロームの誘電体薄膜
を作製した。[Table 1] The target materials 1 to 13 of the present invention were incorporated into a DC sputtering apparatus, and the sputtering gas pressure was 1 mtorr, the power was 50 w, the atmosphere gas composition was Ar: O 2 = 1: 1, the distance between the target and the substrate was 50 mm, and the substrate temperature was: A dielectric thin film having a thickness of 5000 Å was prepared under the conditions of 550 ° C., sputtering time: 5 minutes.
【００１７】得られた誘電体薄膜の電気的特性を測定し
その測定結果を表２に示したのち、さらに誘電体薄膜の
顕微鏡による組織観察を行ない、パーティクル数を測定
しその測定結果を表２に示した。The electrical characteristics of the obtained dielectric thin film were measured, and the measurement results are shown in Table 2. After that, the structure of the dielectric thin film was observed with a microscope, the number of particles was measured, and the measurement results are shown in Table 2. It was shown to.
【００１８】[0018]
【表２】 実施例２ 実施例１と同様にして表３に示される複合酸化物（Ｂａ
ｘＳｒ1-x ）Ｏ粉末を作製し、この複合酸化物（Ｂａｘ
Ｓｒ1-x ）Ｏ粉末に対して、ＴｉＯ2 粉末（添川理化学
製、純度３Ｎ）および実施例１で用意したＴｉ粉末を表
３に示される割合となるように配合し、以下、実施例１
と同様にして本発明ターゲット材１４〜２６を作製し
た。[Table 2] Example 2 In the same manner as in Example 1, the composite oxide (Ba) shown in Table 3 was used.
x Sr 1-x ) O powder was prepared, and this composite oxide (Ba x
Sr 1-x ) O powder was mixed with TiO 2 powder (manufactured by Soegawa Rikagaku Co., Ltd., purity: 3N) and the Ti powder prepared in Example 1 in the proportions shown in Table 3, and
Target materials 14 to 26 of the present invention were produced in the same manner as in.
【００１９】得られた本発明ターゲット材１４〜２６の
組織を顕微鏡で観察したところ、複合酸化物（ＢａｘＳ
ｒ1-x ）Ｏの周囲が酸化チタン（ＴｉＯ2-z 、但し、０
≦ｚ＜２）で包囲されている相およびＴｉＯ2 相がＴｉ
マトリックス中に島状に均一分散していた。When the structures of the obtained target materials 14 to 26 of the present invention were observed with a microscope, a complex oxide (Ba x S
The periphery of r 1-x ) O is titanium oxide (TiO 2-z , provided that 0
≦ z <2) and the TiO 2 phase is Ti
It was uniformly dispersed in an island shape in the matrix.
【００２０】さらに、本発明ターゲット材１４〜２６に
ついて、直流四探針法により電気抵抗を測定したのち抗
折力を測定し、これら測定値を表３に示した。Further, with respect to the target materials 14 to 26 of the present invention, the electrical resistance was measured by the DC four-point probe method, and then the transverse rupture strength was measured, and these measured values are shown in Table 3.
【００２１】[0021]
【表３】 この本発明ターゲット材１４〜２６をＤＣ用スパッタ装
置に組み込み、 スパッタガス圧：１ｍtorr、 パワー ：５０ｗ、 雰囲気ガス組成：Ａｒ：Ｏ2 ＝７：３、 ターゲットと基板の距離：５０mm、 基板温度 ：５５０℃、 スパッタ時間 ：５分、 の条件で厚さ：５０００オングストロームの誘電体薄膜
を作製した。[Table 3] The target materials 14 to 26 of the present invention were incorporated into a DC sputtering apparatus, and the sputtering gas pressure was 1 mtorr, the power was 50 w, the atmosphere gas composition was Ar: O 2 = 7: 3, the distance between the target and the substrate was 50 mm, and the substrate temperature was: A dielectric thin film having a thickness of 5000 Å was prepared under the conditions of 550 ° C., sputtering time: 5 minutes.
【００２２】得られた誘電体薄膜の電気的特性を測定し
その測定結果を表４に示したのち、さらに誘電体薄膜の
顕微鏡による組織観察を行ない、パーティクル数を測定
しその測定結果を表４に示した。The electrical properties of the obtained dielectric thin film were measured, and the measurement results are shown in Table 4. After that, the structure of the dielectric thin film was observed with a microscope, the number of particles was measured, and the measurement results are shown in Table 4. It was shown to.
【００２３】[0023]
【表４】 従来例１ ＢａＣＯ3 粉末（添川理化学製、純度３Ｎ）およびＳｒ
ＣＯ3 粉末（添川理化学製、純度３Ｎ）を用意し、この
ＢａＣＯ3 粉末、ＳｒＣＯ3 粉末および実施例２で用意
したＴｉＯ2 粉末を秤量し、ＺｒＯ2 ボール（径：５mm
φ）５００ｇとともに容積５００mlのボールミルポット
に充填し、１０時間混合したのち、この混合粉末をアル
ミナ製ルツボに移し、電気炉内で温度：１２５０℃、雰
囲気：大気、６時間保持の条件で焼成し、チタン酸複合
化合物（Ｂａ0.5 Ｓｒ0.5 ）ＴｉＯ3 焼成塊を作製し
た。[Table 4] Conventional Example 1 BaCO 3 powder (manufactured by Soegawa Rikagaku, purity 3N) and Sr
A CO 3 powder (manufactured by Soekawa Rikagaku Co., Ltd., purity: 3N) was prepared, and the BaCO 3 powder, the SrCO 3 powder, and the TiO 2 powder prepared in Example 2 were weighed to obtain a ZrO 2 ball (diameter: 5 mm).
φ) 500g ball mill pot with a capacity of 500ml, mixed for 10 hours, transferred to an alumina crucible and baked in an electric furnace under the conditions of temperature: 1250 ° C, atmosphere: air, holding for 6 hours. A titanic acid composite compound (Ba 0.5 Sr 0.5 ) TiO 3 baked mass was prepared.
【００２４】この焼成塊を乳鉢を粉砕し、ついでボール
ミル法により１０時間粉砕し、平均粒径：４．５μｍ
（マイクロトラック法により測定）のチタン酸複合化合
物（Ｂａ0.5 Ｓｒ0.5 ）ＴｉＯ3 粉末を作製した。This calcinated mass was crushed in a mortar and then crushed for 10 hours by a ball mill method to give an average particle diameter of 4.5 μm.
A titanic acid composite compound (Ba 0.5 Sr 0.5 ) TiO 3 powder (measured by the Microtrac method) was prepared.
【００２５】このチタン酸複合化合物（Ｂａ0.5 Ｓｒ
0.5 ）ＴｉＯ3 粉末をグラファイトモールドに充填し、
温度：１２００℃、真空度：１０-3torr、圧力：１５０
kg／cm2 、２時間保持の条件でホットプレスを行ない、
表面加工することにより直径７．６４cmの従来ターゲッ
ト材を作製した。This titanic acid composite compound (Ba 0.5 Sr
0.5 ) Fill the graphite mold with TiO 3 powder,
Temperature: 1200 ° C, vacuum degree: 10 -3 torr, pressure: 150
Perform hot pressing under conditions of kg / cm 2 and holding for 2 hours,
A conventional target material having a diameter of 7.64 cm was produced by surface processing.
【００２６】この従来ターゲット材の組織を顕微鏡観察
したところ、（Ｂａ0.5 Ｓｒ0.5 ）ＴｉＯ3 の焼結体組
織が見られ、さらにこの従来ターゲット材について実施
例１と同様にして抗折力および電気抵抗を測定したとこ
ろ、 抗折力：６０kg／cm2 、 抵抗率：１×１０9 Ω・cm、 であった。Microscopic observation of the structure of this conventional target material reveals a sintered body structure of (Ba 0.5 Sr 0.5 ) TiO 3 , and in the same manner as in Example 1 with respect to this conventional target material, the transverse rupture strength and the electrical strength were measured. When the resistance was measured, the transverse rupture strength was 60 kg / cm 2 , and the resistivity was 1 × 10 9 Ω · cm.
【００２７】この従来ターゲットを高周波スパッタリン
グ装置に組み込み、 スパッタガス圧：１ｍtorr、 パワー ：５０ｗ、 雰囲気ガス組成：Ａｒ：Ｏ2 ＝１：１、 ターゲットと基板の距離：５０mm、 基板温度 ：５５０℃、 の条件で高周波スパッタリングを行ない、厚さ：５００
０オングストロームの誘電体薄膜を作製し、得られた誘
電体薄膜の電気的特性およびパーティクル数を測定した
ところ、 誘電率：６３０、 リーク電流：６×１０-6（Ａ／cm2 ）、 パーティクル
数：８７個／cm2 、 であった。By incorporating this conventional target in a high frequency sputtering apparatus, sputtering gas pressure: 1 mtorr, power: 50 w, atmosphere gas composition: Ar: O 2 = 1: 1, distance between target and substrate: 50 mm, substrate temperature: 550 ° C., High-frequency sputtering is performed under the conditions of, thickness: 500
A dielectric thin film of 0 angstrom was prepared, and the electrical characteristics and the number of particles of the obtained dielectric thin film were measured. Dielectric constant: 630, leak current: 6 × 10 −6 (A / cm 2 ), number of particles : 87 pieces / cm 2 .
【００２８】なお、実施例１および２において、複合酸
化物（ＢａｘＳｒ1-x ）Ｏ粉末を作製する原料粉末とし
てＢａＯ粉末およびＳｒＯ粉末を用いたが、原料粉末と
して、ＢａＣＯ3 粉末およびＳｒＣＯ3 粉末の混合粉
末、ＢａＯ粉末およびＳｒＣＯ3 粉末の混合またはＢａ
ＣＯ3 粉末およびＳｒＯ粉末の混合粉末を焼成し粉砕す
ることにより複合酸化物（ＢａｘＳｒ1-x ）Ｏ粉末を作
製することもできた。In Examples 1 and 2, BaO powder and SrO powder were used as the raw material powders for producing the composite oxide (Ba x Sr 1-x ) O powder, but BaCO 3 powder and SrCO powder were used as the raw material powders. 3 powder mixed powder, BaO powder and SrCO 3 powder mixed or Ba
A composite oxide (Ba x Sr 1-x ) O powder could also be produced by firing a mixed powder of CO 3 powder and SrO powder and pulverizing.
【００２９】[0029]
【発明の効果】上記実施例１および２並びに従来例１に
示される結果から、本発明ターゲット材１〜２６は従来
ターゲットに比較して、電気抵抗率が格段に小さいので
直流スパッタリング法で誘電体薄膜を作製することがで
き、さらに抗折力が大きいので取扱い時に割れることが
ない、という優れた効果がある。From the results shown in Examples 1 and 2 and Conventional Example 1, the target materials 1 to 26 of the present invention have a remarkably lower electric resistivity than the conventional target. A thin film can be produced, and since it has a large transverse rupture strength, it has an excellent effect that it does not crack during handling.
【００３０】さらに、本発明ターゲット材１〜２６を用
いて作製した誘電体薄膜は、従来ターゲット材を用いて
作製した誘電体薄膜に比べて、パーティクル数が少ない
ところから、リーク電流が少なく、さらに誘電率も優れ
た値を示すことがわかる。Further, the dielectric thin films produced by using the target materials 1 to 26 of the present invention have a smaller number of particles than the dielectric thin films produced by using the conventional target materials. It can be seen that the dielectric constant also shows an excellent value.
【００３１】上述のように、この発明のターゲット材
は、直流スパッタリング装置を用いて効率よく安価に優
れた特性を有する誘電体薄膜を提供することができ、電
子産業の発展に大いに貢献しうるものである。As described above, the target material of the present invention can provide a dielectric thin film having excellent characteristics efficiently and inexpensively by using a DC sputtering device, and can greatly contribute to the development of the electronic industry. Is.
Claims (3)
タン（ＴｉＯ2-z 、但し、０≦ｚ＜２）が包囲している
被覆粒子が金属チタン素地中に均一分散している組織を
有することを特徴とする高誘電体薄膜製造用ターゲット
材。1. A structure in which coated particles in which titanium oxide (TiO 2-z , where 0 ≦ z <2) surrounds a Ba and Sr composite oxide are uniformly dispersed in a titanium metal matrix. A target material for producing a high dielectric thin film, comprising:
タン（ＴｉＯ2-z 、但し、０≦ｚ＜２）が包囲している
被覆粒子並びに酸化チタン粒子が金属チタン素地中に均
一分散している組織を有することを特徴とする高誘電体
薄膜製造用ターゲット材。2. Coated particles in which titanium oxide (TiO 2−z , where 0 ≦ z <2) is surrounded by a complex oxide of Ba and Sr and titanium oxide particles are uniformly dispersed in a titanium metal matrix. A target material for producing a high dielectric thin film, which has a texture.
または炭酸塩を混合したのち焼成してＢａとＳｒの複合
酸化物を製造し、このＢａとＳｒの複合酸化物を粉砕し
てＢａとＳｒの複合酸化物粉末を製造し、このＢａとＳ
ｒの複合酸化物粉末に金属チタン粉末または金属チタン
粉末とチタン酸化物粉末の混合粉末を配合して混合し、
真空雰囲気中でホットプレス加工することを特徴とする
高誘電体薄膜製造用ターゲット材の製造法。3. A mixed oxide of Ba and Sr is prepared by mixing an oxide or carbonate of Ba and an oxide or carbonate of Sr and firing the mixed oxide of Ba and Sr. A composite oxide powder of Ba and Sr is produced and
The mixed oxide powder of r is mixed with metallic titanium powder or a mixed powder of metallic titanium powder and titanium oxide powder and mixed,
A method for producing a target material for producing a high dielectric thin film, which comprises hot pressing in a vacuum atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7757193A JPH06264230A (en) | 1993-03-11 | 1993-03-11 | Target material for production of thin film having high dielectric and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7757193A JPH06264230A (en) | 1993-03-11 | 1993-03-11 | Target material for production of thin film having high dielectric and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06264230A true JPH06264230A (en) | 1994-09-20 |
Family
ID=13637702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7757193A Pending JPH06264230A (en) | 1993-03-11 | 1993-03-11 | Target material for production of thin film having high dielectric and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06264230A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19721989A1 (en) * | 1996-05-27 | 1998-02-12 | Mitsubishi Materials Corp | High strength dielectric sputtering target |
| EP1943370B1 (en) * | 2005-11-01 | 2019-08-21 | Cardinal CG Company | Reactive sputter deposition processes and equipment |
-
1993
- 1993-03-11 JP JP7757193A patent/JPH06264230A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19721989A1 (en) * | 1996-05-27 | 1998-02-12 | Mitsubishi Materials Corp | High strength dielectric sputtering target |
| DE19721989C2 (en) * | 1996-05-27 | 1998-09-24 | Mitsubishi Materials Corp | Dielectric sputtering target with high strength and a process for the production thereof |
| US6176986B1 (en) * | 1996-05-27 | 2001-01-23 | Mitsubishi Materials Corporation | Sputtering target of dielectrics having high strength and a method for manufacturing same |
| EP1943370B1 (en) * | 2005-11-01 | 2019-08-21 | Cardinal CG Company | Reactive sputter deposition processes and equipment |
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