JPH06247796A - Lithium tetraborate single crystal - Google Patents
Lithium tetraborate single crystalInfo
- Publication number
- JPH06247796A JPH06247796A JP5955193A JP5955193A JPH06247796A JP H06247796 A JPH06247796 A JP H06247796A JP 5955193 A JP5955193 A JP 5955193A JP 5955193 A JP5955193 A JP 5955193A JP H06247796 A JPH06247796 A JP H06247796A
- Authority
- JP
- Japan
- Prior art keywords
- lithium tetraborate
- crystal
- single crystal
- tetraborate single
- bubbles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は弾性表面波素子等の圧電
デバイスの基板材料等として用いられる四ほう酸リチウ
ム単結晶とその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lithium tetraborate single crystal used as a substrate material for a piezoelectric device such as a surface acoustic wave element and a method for producing the same.
【0002】[0002]
【従来の技術】四ほう酸リチウム単結晶を基板とする弾
性表面波素子は、前記四ほう酸リチウム単結晶の基板を
結晶軸に対し適当なカットアングルを選択して切り出す
ことによりゼロ温度係数を実現できることが知られてい
る。この四ほう酸リチウム単結晶は、回転させたルツボ
内の四ほう酸リチウム融液から種子結晶を回転させなが
らゆっくりと連続的に引き上げるチョクラルスキー法
(CZ法)あるいは、温度勾配を持った炉内で融液を入
れたルツボを移動せしめ、種子結晶を挿入したルツボ先
端より四ほう酸リチウム融液を凝固させるブリッジマン
法で生成するのが一般的であった。2. Description of the Related Art A surface acoustic wave device using a lithium tetraborate single crystal as a substrate can realize a zero temperature coefficient by cutting the substrate of the lithium tetraborate single crystal by selecting an appropriate cut angle with respect to a crystal axis. It has been known. This lithium tetraborate single crystal is produced by the Czochralski method (CZ method) in which a seed crystal is slowly and continuously pulled up from a lithium tetraborate melt in a rotated crucible, or in a furnace having a temperature gradient. The crucible containing the melt was moved, and it was generally produced by the Bridgman method in which the lithium tetraborate melt was solidified from the tip of the crucible containing the seed crystal.
【0003】しかしながら、四ほう酸リチウムの融液は
比較的粘性が高く、原料である四ほう酸リチウム片を溶
融する際に融液内に混入した気泡が容易に移動できない
ため、結晶内に気泡が残存すると云う問題があり、気泡
が内在する結晶から基板を切り出した場合、気泡が穴と
なって現われるため圧電デバイスの基板として使い物に
ならないという欠陥があった。However, the melt of lithium tetraborate has a relatively high viscosity, and when the lithium tetraborate pieces as the raw material are melted, the bubbles mixed in the melt cannot easily move, so that the bubbles remain in the crystal. However, there is a problem that when a substrate is cut out from a crystal containing bubbles, the bubbles appear as holes and thus cannot be used as a substrate of a piezoelectric device.
【0004】また、気泡は線状欠陥の原因ともなり、育
成結晶の品質を極度に低下せしめると云う欠点もあっ
た。そのため、上述の如き従来の結晶育成方法に於いて
は、育成速度を極度に遅くして結晶育成を行なっていた
が、生産性が悪くなることはもちろん、依然として気泡
を充分に除去することはできず、育成した結晶柱の極く
一部しか利用できないため高価であった。Further, the bubble also causes a linear defect and has a drawback that the quality of the grown crystal is extremely deteriorated. Therefore, in the conventional crystal growth method as described above, the crystal growth was carried out by extremely slowing down the growth rate, but of course the productivity is deteriorated and it is still possible to sufficiently remove the bubbles. However, it was expensive because only a small part of the grown crystal columns could be used.
【0005】[0005]
【発明の目的】本発明は上述した如き従来の四ほう酸リ
チウム単結晶の欠点を除去するためになされたものであ
って、気泡の含有量を極限した良質な四ほう酸リチウム
単結晶を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to eliminate the drawbacks of the conventional lithium tetraborate single crystal as described above, and provides a good quality lithium tetraborate single crystal in which the content of bubbles is limited. With the goal.
【0006】[0006]
【発明の概要】上述の目的を達成するため本発明は、ヘ
リウム雰囲気中にて四ほう酸リチウムを加熱溶融した
後、結晶育成することにより結晶中の気泡を極限した四
ほう酸リチウム単結晶を製造するものである。SUMMARY OF THE INVENTION To achieve the above object, the present invention produces a lithium tetraborate single crystal in which bubbles in the crystal are limited by heating and melting lithium tetraborate in a helium atmosphere and then growing the crystal. It is a thing.
【0007】[0007]
【実施例】以下、本発明を実施例を示す図面に基づいて
詳細に説明する。図1は本発明に係る四ほう酸リチウム
単結晶を育成するためのブリッジマン炉の一実施例であ
る。ブリッジマン炉1は、ワイヤ巻取装置2から伸びる
ワイヤ3の先端に固定された白金製ルツボ4、該ルツボ
4の周囲を包囲する如く配置したヒータ5およびこれら
を外界から遮断するためのチューブ6とから成る。尚、
ルツボ4はワイヤ巻取装置2によりワイヤ3の操出し長
さを調節することで図中上下方向に移動可能であり、ま
たヒータ5は図中下方が低温となるよう温度勾配を持た
せてある。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings showing the embodiments. FIG. 1 shows an embodiment of a Bridgman furnace for growing a lithium tetraborate single crystal according to the present invention. The Bridgman furnace 1 includes a platinum crucible 4 fixed to the tip of a wire 3 extending from a wire winding device 2, a heater 5 arranged so as to surround the crucible 4, and a tube 6 for shielding these from the outside world. It consists of and. still,
The crucible 4 can be moved in the vertical direction in the figure by adjusting the feeding length of the wire 3 by the wire winding device 2, and the heater 5 has a temperature gradient so that the lower side in the figure has a low temperature. .
【0008】まず、チューブ6内にガス導入口7よりヘ
リウムガスを1(Nl/min)の割合で導入してチュ
ーブ6内をヘリウム雰囲気に置換した後、原料である四
ほう酸リチウム片8を充填した前記ルツボ4をヒータ5
の図中上方に移動せしめ、四ほう酸リチウムの融点であ
る917゜C以上の温度に加熱して原料を溶融する。而
して、前記ルツボ4を所定の速度にて図中下方に移動す
ることにより、ルツボ下端の小径部に予め挿入しておい
た種子結晶9側から四ほう酸リチウムの融液が徐冷され
単結晶が育成される。育成速度はルツボ4の移動速度即
ちワイヤ3の操出しにより調節する。尚、原料への加熱
開始から結晶の育成後まで継続してヘリウムガスの供給
を行なった。First, helium gas was introduced into the tube 6 from the gas inlet 7 at a rate of 1 (Nl / min) to replace the inside of the tube 6 with a helium atmosphere, and then a lithium tetraborate piece 8 as a raw material was filled. The crucible 4 is heated by the heater 5
In the figure, the raw material is melted by heating it to a temperature of 917 ° C. or higher, which is the melting point of lithium tetraborate. Then, by moving the crucible 4 downward in the figure at a predetermined speed, the melt of lithium tetraborate is gradually cooled from the seed crystal 9 side previously inserted in the small diameter portion at the lower end of the crucible, and then cooled. The crystal grows. The growing speed is adjusted by the moving speed of the crucible 4, that is, the feeding of the wire 3. In addition, helium gas was continuously supplied from the start of heating to the raw material to after the crystal growth.
【0009】図2は上述のブリッジマン炉で育成した四
ほう酸リチウム単結晶中の気泡残存状態と育成速度との
関係を、炉内にヘリウムガスを導入した場合と大気を導
入した場合とを対比して示したものであり、気泡の残存
状態は育成した単結晶に明光を照射し目視にて観察した
ものである。前述した通り、大気中で四ほう酸リチウム
単結晶を育成した場合は、育成速度を遅くするほど結晶
内に残存する気泡が減少する。これに対し、ヘリウム雰
囲気中にて育成を行なった場合は結晶の育成速度とは無
関係に結晶内に残存する気泡が観察されないことが判明
した。FIG. 2 shows the relationship between the state of bubbles remaining in the lithium tetraborate single crystal grown in the above-mentioned Bridgman furnace and the growth rate when the helium gas was introduced into the furnace and the atmosphere was introduced. The remaining state of the bubbles is what was observed visually by shining bright light on the grown single crystal. As described above, when a lithium tetraborate single crystal is grown in the atmosphere, the bubbles remaining in the crystal decrease as the growth rate is slowed down. On the other hand, it was found that when growing in a helium atmosphere, bubbles remaining in the crystal were not observed regardless of the growth rate of the crystal.
【0010】これはヘリウムの分子が極めて小さいた
め、四ほう酸リチウムの融液あるいは単結晶中にヘリウ
ム分子が拡散することに起因すると推測される。換言す
れば、大気中の窒素あるいは酸素の分子が比較的大き
く、四ほう酸リチウム中に拡散できないため、気泡とし
て結晶中に残存するものと考えられるのに対し、ヘリウ
ム雰囲気中にて育成を行なって得られた四ほう酸リチウ
ム単結晶には拡散されたヘリウム分子が存在するが、そ
の含有量は高々1000ppmであり、しかも周知の通
りヘリウムは安定な不活性原子であるから、この結晶を
圧電デバイスの基板として用いても何ら特性の劣化は見
られなかった。従って、上述した如く加熱溶融から結晶
化までの工程をヘリウム雰囲気内で行なうことのみで、
結晶内に気泡が残存するのを極限した四ほう酸リチウム
単結晶を育成速度を遅くすることなしに得ることが可能
となる。It is speculated that this is because helium molecules are extremely small, and therefore helium molecules diffuse into the melt or single crystal of lithium tetraborate. In other words, the molecules of nitrogen or oxygen in the atmosphere are relatively large and cannot diffuse in lithium tetraborate, so it is considered that they will remain in the crystal as bubbles, whereas they will be grown in a helium atmosphere. The obtained lithium tetraborate single crystal contains diffused helium molecules, but the content is at most 1000 ppm, and as is well known, helium is a stable inert atom. No deterioration of the characteristics was observed even when used as a substrate. Therefore, as described above, only by performing the steps from heating and melting to crystallization in a helium atmosphere,
It becomes possible to obtain a lithium tetraborate single crystal in which bubbles remain in the crystal to the limit without slowing the growth rate.
【0011】尚、以上本発明をブリッジマン炉にヘリウ
ムガスを導入して結晶育成したものを例として説明した
が、本発明はこれのみに限定されるものではなく、ヘリ
ウム雰囲気中で溶融、結晶化を行なうものであれば如何
なる結晶育成方法あってもよく、例えばチョクラルスキ
ー法等に適用してもよい。また予めヘリウム雰囲気中に
て四ほう酸リチウム片を溶融、冷却して得た四ほう酸リ
チウムのインゴットを原料として単結晶の育成を行なえ
ば、より効率的に四ほう酸リチウム単結晶の製造が可能
となる。Although the present invention has been described above by taking as an example a crystal grown by introducing helium gas into a Bridgman furnace, the present invention is not limited to this, and melting and crystallization in a helium atmosphere are performed. Any crystal growth method may be used as long as it can be converted into, for example, the Czochralski method or the like. Further, if a single crystal is grown using a lithium tetraborate ingot obtained by melting and cooling lithium tetraborate pieces in a helium atmosphere in advance, it becomes possible to more efficiently produce a lithium tetraborate single crystal. .
【0012】さらに、防爆等の設備が必要であり、還元
雰囲気となるため白金ルツボの代わりにカーボンルツボ
を用いなければならないと云った制約はあるものの、ヘ
リウムガスと同様に分子の小さい水素ガスを、ヘリウム
ガスに代えて炉内に導入した場合にも気泡のない結晶を
得ることが可能であることは容易に想到できるであろ
う。Further, although there is a restriction that facilities such as explosion-proof are required and a carbon crucible must be used instead of a platinum crucible because a reducing atmosphere is created, hydrogen gas having a small molecule like helium gas is used. It is easily conceivable that a bubble-free crystal can be obtained even when the helium gas is introduced into the furnace instead of the helium gas.
【0013】[0013]
【発明の効果】本発明は、以上説明した如く構成するも
のであるから、格別の困難なしに結晶中に気泡が混入す
るのを極限し、比較的速い育成速度にて良質な四ほう酸
リチウム単結晶を製造する上で著しい効果を奏する。EFFECTS OF THE INVENTION Since the present invention is constructed as described above, it is possible to limit the inclusion of air bubbles in the crystal without any particular difficulty, and to obtain a high-quality lithium tetraborate simple substance at a relatively high growth rate. It has a remarkable effect in producing crystals.
【0014】[0014]
【図1】本発明に係る四ほう酸リチウム単結晶を育成す
るためのブリッジマン炉の一実施例を示す断面図。FIG. 1 is a sectional view showing an embodiment of a Bridgman furnace for growing a lithium tetraborate single crystal according to the present invention.
【図2】四ほう酸リチウム単結晶中の気泡残存状態と育
成速度との関係示す図。FIG. 2 is a diagram showing the relationship between the state of bubbles remaining in a lithium tetraborate single crystal and the growth rate.
1・・・ブリッジマン炉 3・・・ワイヤ 4・・・ルツボ 5・・・ヒータ 6・・・チューブ 7・・・ガス導入口 8・・・四ほう酸リチウム片 9・・・種子結晶 1 ... Bridgman furnace 3 ... Wire 4 ... Crucible 5 ... Heater 6 ... Tube 7 ... Gas inlet 8 ... Lithium tetraborate piece 9 ... Seed crystal
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H03H 9/25 C 7259−5J ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H03H 9/25 C 7259-5J
Claims (1)
を徐冷し結晶育成することにより生成される四ほう酸リ
チウム単結晶であって、ヘリウムガスあるいは水素ガス
等の微小な分子を成分とするガス雰囲気中にて上述の工
程を行うことにより前記ガスを結晶中に拡散せしめたこ
とを特徴とする四ほう酸リチウム単結晶。1. A lithium tetraborate single crystal produced by heating and melting lithium tetraborate, followed by gradual cooling and crystal growth, which contains fine molecules such as helium gas or hydrogen gas as a component. A lithium tetraborate single crystal, characterized in that the gas is diffused into the crystal by performing the above steps in a gas atmosphere.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05955193A JP3425991B2 (en) | 1993-02-24 | 1993-02-24 | Method for producing lithium tetraborate single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05955193A JP3425991B2 (en) | 1993-02-24 | 1993-02-24 | Method for producing lithium tetraborate single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06247796A true JPH06247796A (en) | 1994-09-06 |
JP3425991B2 JP3425991B2 (en) | 2003-07-14 |
Family
ID=13116507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP05955193A Expired - Fee Related JP3425991B2 (en) | 1993-02-24 | 1993-02-24 | Method for producing lithium tetraborate single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3425991B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106948003A (en) * | 2017-04-03 | 2017-07-14 | 中国科学院新疆理化技术研究所 | Compound potassium fluoborate and potassium fluoborate nonlinear optical crystal and preparation method and purposes |
-
1993
- 1993-02-24 JP JP05955193A patent/JP3425991B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106948003A (en) * | 2017-04-03 | 2017-07-14 | 中国科学院新疆理化技术研究所 | Compound potassium fluoborate and potassium fluoborate nonlinear optical crystal and preparation method and purposes |
CN106948003B (en) * | 2017-04-03 | 2019-08-06 | 中国科学院新疆理化技术研究所 | Compound potassium fluoborate and potassium fluoborate nonlinear optical crystal and preparation method and purposes |
Also Published As
Publication number | Publication date |
---|---|
JP3425991B2 (en) | 2003-07-14 |
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