JPH06235063A - スパッタリング陰極 - Google Patents

スパッタリング陰極

Info

Publication number
JPH06235063A
JPH06235063A JP4127472A JP12747292A JPH06235063A JP H06235063 A JPH06235063 A JP H06235063A JP 4127472 A JP4127472 A JP 4127472A JP 12747292 A JP12747292 A JP 12747292A JP H06235063 A JPH06235063 A JP H06235063A
Authority
JP
Japan
Prior art keywords
target
sputtering
sputtering cathode
pole pieces
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4127472A
Other languages
English (en)
Japanese (ja)
Inventor
Eggo Sichmann
エゴ、ジヒマン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Balzers und Leybold Deutschland Holding AG
Original Assignee
Leybold AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold AG filed Critical Leybold AG
Publication of JPH06235063A publication Critical patent/JPH06235063A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP4127472A 1991-10-31 1992-05-20 スパッタリング陰極 Pending JPH06235063A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4135939A DE4135939A1 (de) 1991-10-31 1991-10-31 Zerstaeubungskathode
DE4135939.9 1991-10-31

Publications (1)

Publication Number Publication Date
JPH06235063A true JPH06235063A (ja) 1994-08-23

Family

ID=6443857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4127472A Pending JPH06235063A (ja) 1991-10-31 1992-05-20 スパッタリング陰極

Country Status (4)

Country Link
US (1) US5266178A (en, 2012)
EP (1) EP0539650A1 (en, 2012)
JP (1) JPH06235063A (en, 2012)
DE (1) DE4135939A1 (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011062943A3 (en) * 2009-11-18 2011-09-15 Applied Materials, Inc. Planar magnetron sputtering source producing high target utilization and stable coating uniformity over lifetime

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1067118C (zh) * 1994-07-08 2001-06-13 松下电器产业株式会社 磁控管溅射装置
US5441614A (en) * 1994-11-30 1995-08-15 At&T Corp. Method and apparatus for planar magnetron sputtering
US6221217B1 (en) 1995-07-10 2001-04-24 Cvc, Inc. Physical vapor deposition system having reduced thickness backing plate
GB2318590B (en) * 1995-07-10 1999-04-14 Cvc Products Inc Magnetron cathode apparatus and method for sputtering
DE19627533A1 (de) * 1996-07-09 1998-01-15 Leybold Materials Gmbh Target für die Sputterkathode einer Vakuumbeschichtungsanlage und Verfahren zu seiner Herstellung
DE19738815A1 (de) * 1997-09-05 1999-03-11 Leybold Ag Verfahren zur Montage von Targetsegmenten und Justierbolzen zur Durchführung des Verfahrens
IL127236A0 (en) 1997-11-26 1999-09-22 Vapor Technologies Inc Apparatus for sputtering or arc evaporation
US6066242A (en) * 1998-06-10 2000-05-23 David A. Glocker Conical sputtering target
US5997705A (en) * 1999-04-14 1999-12-07 Vapor Technologies, Inc. Rectangular filtered arc plasma source
US6783638B2 (en) * 2001-09-07 2004-08-31 Sputtered Films, Inc. Flat magnetron
GB0126721D0 (en) * 2001-11-07 2002-01-02 Bellido Gonzalez V Ferromagnetic magnetron
EP1336985A1 (de) * 2002-02-19 2003-08-20 Singulus Technologies AG Zerstäubungskathode und Vorrichtung und Verfahren zum Beschichten eines Substrates mit mehreren Schichten
US20040055883A1 (en) * 2002-03-02 2004-03-25 Shinzo Onishi Magnetron sputtering target for non-magnetic materials
DE10234858A1 (de) * 2002-07-31 2004-02-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Einrichtung zur Erzeugung einer Magnetron-Entladung
US7498587B2 (en) * 2006-05-01 2009-03-03 Vapor Technologies, Inc. Bi-directional filtered arc plasma source
US20080083611A1 (en) * 2006-10-06 2008-04-10 Tegal Corporation High-adhesive backside metallization
US8691057B2 (en) * 2008-03-25 2014-04-08 Oem Group Stress adjustment in reactive sputtering
US20090246385A1 (en) * 2008-03-25 2009-10-01 Tegal Corporation Control of crystal orientation and stress in sputter deposited thin films
CN101525737B (zh) * 2009-01-19 2011-05-25 中国电子科技集团公司第四十八研究所 一种用于镀制贵金属膜的磁控溅射靶
US8482375B2 (en) * 2009-05-24 2013-07-09 Oem Group, Inc. Sputter deposition of cermet resistor films with low temperature coefficient of resistance

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5585673A (en) * 1978-12-20 1980-06-27 Advanced Coating Tech Cathode for sputtering
JPS60138070A (ja) * 1983-12-05 1985-07-22 ライボルト・アクチェンゲゼルシャフト 強磁性ターゲツトをスパツタするためのマグネトロンカソード
JPS6393881A (ja) * 1986-10-08 1988-04-25 Anelva Corp プラズマ処理装置
JPH0285354A (ja) * 1988-09-19 1990-03-26 Daido Steel Co Ltd 黒色被膜コーティング方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3884793A (en) * 1971-09-07 1975-05-20 Telic Corp Electrode type glow discharge apparatus
JPS5952957B2 (ja) * 1980-06-16 1984-12-22 日電アネルバ株式会社 マグネトロン型スパッタ装置のカソ−ド部
JPS58221275A (ja) * 1982-06-16 1983-12-22 Anelva Corp スパツタリング装置
US4391697A (en) * 1982-08-16 1983-07-05 Vac-Tec Systems, Inc. High rate magnetron sputtering of high permeability materials
US4515675A (en) * 1983-07-06 1985-05-07 Leybold-Heraeus Gmbh Magnetron cathode for cathodic evaportion apparatus
DE3411536A1 (de) * 1983-07-06 1985-01-17 Leybold-Heraeus GmbH, 5000 Köln Magnetronkatode fuer katodenzerstaeubungsanlagen
DE3429988A1 (de) * 1983-12-05 1985-06-13 Leybold-Heraeus GmbH, 5000 Köln Magnetronkatode zum zerstaeuben ferromagnetischer targets
DE3527626A1 (de) * 1985-08-01 1987-02-05 Leybold Heraeus Gmbh & Co Kg Zerstaeubungskatode nach dem magnetronprinzip
JPH02194171A (ja) * 1989-01-20 1990-07-31 Ulvac Corp マグネトロンスパッタリング源

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5585673A (en) * 1978-12-20 1980-06-27 Advanced Coating Tech Cathode for sputtering
JPS60138070A (ja) * 1983-12-05 1985-07-22 ライボルト・アクチェンゲゼルシャフト 強磁性ターゲツトをスパツタするためのマグネトロンカソード
JPS6393881A (ja) * 1986-10-08 1988-04-25 Anelva Corp プラズマ処理装置
JPH0285354A (ja) * 1988-09-19 1990-03-26 Daido Steel Co Ltd 黒色被膜コーティング方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011062943A3 (en) * 2009-11-18 2011-09-15 Applied Materials, Inc. Planar magnetron sputtering source producing high target utilization and stable coating uniformity over lifetime

Also Published As

Publication number Publication date
DE4135939C2 (en, 2012) 1993-08-12
EP0539650A1 (de) 1993-05-05
US5266178A (en) 1993-11-30
DE4135939A1 (de) 1993-05-06

Similar Documents

Publication Publication Date Title
JPH06235063A (ja) スパッタリング陰極
US6485617B2 (en) Sputtering method utilizing an extended plasma region
US4100055A (en) Target profile for sputtering apparatus
KR100442085B1 (ko) 자기 버킷 및 동심 플라즈마와 재료원에 의한 이온화 물리적 기상 증착 방법 및 장치
US6197165B1 (en) Method and apparatus for ionized physical vapor deposition
US6080287A (en) Method and apparatus for ionized physical vapor deposition
US6758949B2 (en) Magnetically confined metal plasma sputter source with magnetic control of ion and neutral densities
US6462482B1 (en) Plasma processing system for sputter deposition applications
KR890004172B1 (ko) 진공 스퍼터링장치
KR920004912B1 (ko) 플라즈마 장치
US6338781B1 (en) Magnetron sputtering cathode with magnet disposed between two yoke plates
US4810347A (en) Penning type cathode for sputter coating
US4933064A (en) Sputtering cathode based on the magnetron principle
JP2002530531A (ja) イオン化物理蒸着のための方法および装置
JPH0510422B2 (en, 2012)
JPH0359138B2 (en, 2012)
US6160350A (en) Ion plating apparatus
JPH04254580A (ja) マグネトロン陰極を用いた基板のコーティング法および装置
US6761804B2 (en) Inverted magnetron
KR890004171B1 (ko) 진공 스퍼터링 장치
US20140042023A1 (en) Magnetron design for extended target life in radio frequency (rf) plasmas
JPS61277142A (ja) 外部プラズマ・ガン
US5085755A (en) Sputtering apparatus for forming thin films
US20030116432A1 (en) Adjustable throw reactor
KR20040050064A (ko) 플랫 마그네트론