WO2011062943A3 - Planar magnetron sputtering source producing high target utilization and stable coating uniformity over lifetime - Google Patents

Planar magnetron sputtering source producing high target utilization and stable coating uniformity over lifetime Download PDF

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Publication number
WO2011062943A3
WO2011062943A3 PCT/US2010/056949 US2010056949W WO2011062943A3 WO 2011062943 A3 WO2011062943 A3 WO 2011062943A3 US 2010056949 W US2010056949 W US 2010056949W WO 2011062943 A3 WO2011062943 A3 WO 2011062943A3
Authority
WO
WIPO (PCT)
Prior art keywords
planar magnetron
target
magnetron sputtering
producing high
sputtering source
Prior art date
Application number
PCT/US2010/056949
Other languages
French (fr)
Other versions
WO2011062943A2 (en
Inventor
James G. Rietzel
Hans Peter Theodorus Ceelen
Leszek Malaszewski
Daniel J. Zehm
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Publication of WO2011062943A2 publication Critical patent/WO2011062943A2/en
Publication of WO2011062943A3 publication Critical patent/WO2011062943A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
    • H01J25/50—Magnetrons, i.e. tubes with a magnet system producing an H-field crossing the E-field
    • H01J25/60—Magnetrons, i.e. tubes with a magnet system producing an H-field crossing the E-field with an electron space having a shape that prevents any electron from moving completely around the cathode or guide electrode; Linear magnetrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A method and apparatus for sputtering is provided. In one embodiment, a planar magnetron cathode is provided, comprised of a target and one or more magnet rails mounted to a cathode core. The planar magnetron cathode further comprises a backing plate mounted to the cathode core, the target being mounted to a mounting side of the backing plate. The planar magnetron cathode further comprises a cooling system mounted to a cooling side of the backing plate and a plurality of magnets mounted to the one or more magnet rails, the plurality of magnets having a substantially uniform magnetic field through at least a majority of the target. In one embodiment, the target comprises a primary target comprising a first material and a secondary target comprising the first material and a second material.
PCT/US2010/056949 2009-11-18 2010-11-17 Planar magnetron sputtering source producing high target utilization and stable coating uniformity over lifetime WO2011062943A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26244409P 2009-11-18 2009-11-18
US61/262,444 2009-11-18

Publications (2)

Publication Number Publication Date
WO2011062943A2 WO2011062943A2 (en) 2011-05-26
WO2011062943A3 true WO2011062943A3 (en) 2011-09-15

Family

ID=44060297

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/056949 WO2011062943A2 (en) 2009-11-18 2010-11-17 Planar magnetron sputtering source producing high target utilization and stable coating uniformity over lifetime

Country Status (1)

Country Link
WO (1) WO2011062943A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102560401A (en) * 2012-03-01 2012-07-11 上海福宜新能源科技有限公司 High-power dense magnetic control sputtering cathode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63219579A (en) * 1987-03-06 1988-09-13 Osaka Shinku Kiki Seisakusho:Kk Sputtering device
JPH06235063A (en) * 1991-10-31 1994-08-23 Leybold Ag Sputtering cathode
JPH11510563A (en) * 1996-04-29 1999-09-14 フォン・アルデンネ・アンラーゲンテヒニク・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング Sputtering apparatus with two magnetrons extending in the longitudinal direction
US7087145B1 (en) * 2005-03-10 2006-08-08 Robert Choquette Sputtering cathode assembly

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63219579A (en) * 1987-03-06 1988-09-13 Osaka Shinku Kiki Seisakusho:Kk Sputtering device
JPH06235063A (en) * 1991-10-31 1994-08-23 Leybold Ag Sputtering cathode
JPH11510563A (en) * 1996-04-29 1999-09-14 フォン・アルデンネ・アンラーゲンテヒニク・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング Sputtering apparatus with two magnetrons extending in the longitudinal direction
US7087145B1 (en) * 2005-03-10 2006-08-08 Robert Choquette Sputtering cathode assembly

Also Published As

Publication number Publication date
WO2011062943A2 (en) 2011-05-26

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