JPH06232200A - Semiconductor device - Google Patents

Abstract

PURPOSE:To facilitate the packaging of a small-sized semiconductor chip having a lot of pins, and prevent the vertical movement of the semiconductor chip which is generated at the time of transfer mold, in a TAB system using a film carrier. CONSTITUTION:A sheet 30 for leading out wiring wherein a plurality of leads 32 are formed on a sheet substratum 31 is stuck and laminated on a film carrier 20 wherein a plurality of leads 22 are formed on a film substratum 21. Inner leads 22a of the film carrier 20 are bonded to first electrode pads formed on the outer periphery of a semiconductor chip 10. Bonding lead parts 32a of the sheet 30 for leading out wiring are bonded to second electrode pads formed in arbitrary positions of the inner periphery on the semiconductor chip 10. By a transfer mold method, the semiconductor chip 10 is sealed with resin 40. The leading-out of wiring from the second electrode pads is possible, and the semiconductor chip 10 and the film carrier 20 are integrally unified in a body.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device using a film carrier.

[0002]

2. Description of the Related Art As one of semiconductor chip mounting technologies,
For example, as shown in FIG. 6, a TAB (Tape Automated Bondin) for mounting the semiconductor chip 1 on the film carrier 20.
g) The method is known.

The film carrier 20 is a flexible and insulating film base material 21 made of a polyimide resin or the like.
And a plurality of leads 22 pattern-formed on the film base material 21 with a conductive metal material such as copper foil. The device hole 23 is formed in the film substrate 21.
And the outer lead hole 24 are formed, and the device hole 23
The support portion 21 a remains between the outer lead hole 24 and the outer lead hole 24. One end of each lead 22 has a device hole 23.
The inner lead 22a is projected inward, and the other end is an outer lead 22b bridged to the outer lead hole 24.

Each inner lead 22a of the film carrier 20 and a plurality of electrode pads formed on the outer peripheral portion of the upper surface of the semiconductor chip 1 are collectively bonded via bumps 25.

Conventionally, the transfer molding method has been mainly used to seal the semiconductor chip 1 with a resin for protection in the TAB method, and the semiconductor chip 1 is formed in a mold (not shown). The resin 40 is sealed and packaged.

[0006]

However, in the conventional TAB method as described above, the number of electrode pads on the semiconductor chip 1 increases and the pitch of the electrode pads becomes narrower as the package becomes smaller. Therefore, there is a limit in pulling out the lead 22. In particular, in a so-called area TAB semiconductor chip in which a plurality of electrode pads are formed also on the inner peripheral portion of the chip, there is a problem that it is extremely difficult to draw out wiring from the semiconductor chip.

Further, since the film carrier 20 in the TAB system is extremely thin and flexible, when the package is made smaller and thinner, the resin 40 is used at the time of resin sealing by the transfer molding method. The position of the semiconductor chip 1 is likely to fluctuate upward or downward inside. As a result, the surface of the film carrier 20 or the semiconductor chip 1 is exposed and the film carrier 20, that is, the lead 22 is deformed, but as a countermeasure against this, it is very difficult to optimally set the molding conditions of the transfer mold. was there.

In view of the above, the present invention makes it possible to easily mount a multi-pin and miniaturized semiconductor chip in the TAB method using a film carrier, and prevent vertical fluctuation of the semiconductor chip that occurs during transfer molding. An object is to provide a semiconductor device.

[0009]

In order to achieve the above object, a semiconductor device according to the present invention has a plurality of first electrode pads formed on an outer peripheral portion of a chip and a plurality of second electrode pads. A semiconductor chip formed on the chip at an arbitrary position on the inner periphery thereof, a film carrier having a plurality of leads connected to a first electrode pad of the semiconductor chip, and a second electrode of the semiconductor chip. A wiring lead-out sheet having a plurality of leads connected to pads, the wiring lead-out sheet is closely laminated on the film carrier, and the lead of the film carrier is bonded to the first electrode pad of the semiconductor chip. Along with
The leads of the wiring drawing sheet are joined to the second electrode pads of the semiconductor chip.

A plurality of the wiring drawing sheets may be laminated on the film carrier.

A reinforcing sheet made of the same material as that of the wiring drawing sheet may be closely fixed to the lower surfaces of the semiconductor chip and the film carrier.

Further, the semiconductor device according to the present invention is obtained by encapsulating each of the semiconductor devices constructed as described above with a resin.

[0013]

According to the present invention having the above-described structure, the lead of the film carrier pulls out the wiring from the first electrode pad formed on the outer peripheral portion of the semiconductor chip, and is in close contact with the film carrier. Wiring is drawn out from the second electrode pad formed at an arbitrary position on the inner peripheral portion of the semiconductor chip by the leads of the stacked wiring drawing sheets, so that a semiconductor chip having a large number of pins and a small size can be easily manufactured. Can be implemented in.

In addition, the semiconductor chip and the film carrier, which are mechanically held only by the joining of the first electrode pad and the lead, are integrated via the wiring drawing sheet closely adhered thereon. As a result, the mechanical strength is improved, and it is possible to prevent the semiconductor chip from vertically moving during resin encapsulation by the transfer molding method.

Further, when a plurality of wiring drawing sheets are laminated on the film carrier, the leads of the wiring drawing sheets can be crossed in a non-contact manner, so that the degree of freedom in drawing the wiring is improved and more leads are obtained. It can support pinning.

When the reinforcing sheet is tightly fixed to the lower surface of the semiconductor chip and the film carrier, the semiconductor chip and the film carrier are also integrated on the lower surface, so that the mechanical strength is further improved and the resin sealing is performed. The vertical movement of the semiconductor chip can be prevented more effectively.

[0017]

Embodiments of the semiconductor device according to the present invention will be described below with reference to FIGS. 1 to 4 show the first embodiment, and FIG. 5 shows the second embodiment.

First, as shown in FIGS. 1 to 3, the semiconductor device comprises a semiconductor chip 10, a film carrier 20, and a wiring drawing sheet 30.

The semiconductor chip 10 is used for an area TAB or the like, and a plurality of first electrode pads 11 are arranged on the outer periphery of the chip, and a plurality of second electrode pads 12 are provided on the chip. It is arranged at an arbitrary position on the inner peripheral portion.

The film carrier 20 may be the same as the above-mentioned conventional example, and substantially the same constituent parts are designated by the same reference numerals and the description thereof will be omitted, but the film carrier 20 is patterned on the film base material 21. Each inner lead 22a of the plurality of leads 22 corresponds to each of the plurality of first electrode pads 11 of the semiconductor chip 10. The film carrier 20 is usually supplied in the form of a long tape in which sprocket holes (not shown) are formed on both sides of the outer periphery of the film base material 21.

The wiring drawing sheet 30 is a flexible and insulating sheet base material 31 made of polyimide resin or the like.
And a plurality of leads 32 patterned on the sheet base material 31 with a conductive metal material such as copper foil. A connection lead hole 34 corresponding to the outer lead hole 24 of the film carrier 20 is formed in the sheet base material 31. One end of each lead 32 penetrates the sheet base material 31 and is exposed on the lower surface of the joint lead portion 32a.
And the other end is a connection lead portion 32b that is bridged to the connection lead hole 34. The positions of the bonding lead portions 32a of the respective leads 32 correspond to the positions of the plurality of second electrode pads 12 of the semiconductor chip 10, respectively, but the layout of the respective leads 32 on the sheet base material 31 may be arbitrarily changed. Is possible.

The sheet base material 31 of the wiring drawing sheet 30 is made of a material having a coefficient of thermal expansion similar to that of the semiconductor chip 10 and high adhesion to the semiconductor chip 10. This is to prevent peeling between the semiconductor chip 10 and the wiring drawing sheet 30 and cracks in the resin that occur after the transfer molding described later.

Next, the manufacturing process of this semiconductor device will be described. First, as shown in FIG. 1, a wiring drawing sheet 30 is laminated on the film carrier 20 in close contact with each other. Note that an adhesive may be used when bringing them into close contact. As a result, the sheet base material 31 of the wiring drawing sheet 30 covers the device hole 23 of the film carrier 20, and the bonding lead portion 32 a is exposed in the device hole 23. As a matter of course, the surface of the film carrier 20 on which the leads 22 are formed and the surface of the sheet base material 31 of the wiring drawing sheet 30 are opposed to each other to ensure insulation between the leads 22 and the leads 32.

Then, the first electrode pad 11 of the semiconductor chip 10 and the inner lead 22 of the film carrier 20.
At the same time, a is bonded together by thermocompression or the like via the bumps 25, and at the same time, the second electrode pad 12 of the semiconductor chip 10 and the bonding lead portion 32a of the wiring lead-out sheet 30.
And are collectively bonded by thermocompression or the like via the bumps 35. The bumps 25 and 35 are formed on the semiconductor chip 1.
0 may be provided in advance on the first and second electrodes 11 and 12, or the inner lead 22a and the joining lead portion 32 may be provided.
It may be formed in advance as a transfer bump on a.

In this way, the wiring is led out from the first electrode pad 11 on the semiconductor chip 10 by the lead 22 of the film carrier 20 as in the conventional case, and the wiring is closely attached and laminated on the film carrier 20. The semiconductor chip 1 by the leads 32 of the sheet 30 for
The wiring is also drawn out from the second electrode pad 12 above 0. Therefore, the number of pins and the size of the semiconductor chip 1 are reduced.
0 can be easily mounted by the TAB method.

Next, as shown in FIG. 2, the semiconductor chip 10 mounted as described above is sealed by a resin 40 in a mold (not shown) by a transfer molding method and packaged. To do. At this time, the sheet base material 3 of the wiring drawing sheet 30 is pressed by the pressure of the resin 40.
1 is brought into close contact with the upper surface of the semiconductor chip 10.

By the way, the wiring chip sheet 3 in which the semiconductor chip 10 and the film carrier 20, which are mechanically held only by the bonding between the first electrode pad 11 and the inner lead 22a, are adhered and laminated on them,
Since it is integrated through 0, the mechanical strength is improved. As a result, it is possible to prevent the semiconductor chip 10 from moving up and down during resin encapsulation by the transfer molding method.

As described above, the film carrier 2
0 is supplied in the form of a long tape, and after mounting the semiconductor chip 10 and molding the resin 40, the tape-shaped film carrier 20 is wound around a reel (not shown) and accommodated. At this time, in the structure in which the wiring drawing sheet 30 is laminated on the film carrier 20 as in the present embodiment, the leads 22 are protected by the wiring drawing sheet 30 when the film carrier 20 is wound. Two
2 can be prevented from being damaged.

Next, the semiconductor device packaged as described above has the outer lead 22 shown in FIG.
b and the connecting lead portion 32b are cut at the outer end position, and the leads 22b and 32b are formed in a gull wing shape, for example, as shown in FIG. When the semiconductor device is mounted on a circuit board or the like, the connection lead portion 32b
Between the outer leads 22b. Since the gap between the outer leads 22b is wider than the gap between the inner leads 22a, such an arrangement is possible. Further, as shown in the figure, the connecting lead portion 32b is connected to the outer lead 22.
It may be extended outward from b and positioned outside, and in this case, the connecting lead portion 32b may be replaced by the outer lead 22b.
It is possible to pull out from above.

Next, FIG. 5 shows a second embodiment, in which a wiring drawing sheet 30 is provided on the film carrier 20.
Is closely laminated, and a similar wiring drawing sheet 30 'is closely laminated on the wiring drawing sheet 30. One end of the lead 32 'of the upper wiring drawing sheet 30' has a sheet base material 31 'and a lower sheet base material 3'.
It penetrates 1 and is bonded to still another second electrode pad 12 on the semiconductor chip 10.

In this way, a plurality of wiring drawing sheets 3
When 0 and 30 'are laminated on the film carrier 20, the leads 32 and 3 of the wiring drawing sheets 30 and 30' are laminated.
Since 2'can be crossed without contact, the degree of freedom in drawing out the wiring is improved, and more pins can be accommodated.

Further, in the second embodiment, an integral reinforcing sheet 50 is closely fixed to the lower surface of the semiconductor chip 10 and the lower surface of the film carrier 20 (support portion 21a). The reinforcing sheet 50 is formed of a flexible and insulating material such as a polyimide resin similar to the sheet base material 31 of the wiring drawing sheet 30.

As described above, when the reinforcing sheet 50 is tightly fixed to the lower surfaces of the semiconductor chip 10 and the film carrier 20, the semiconductor chip 10 and the film carrier 20 are also integrated on the lower surface. As a result, the mechanical strength is further improved in combination with the wiring drawing sheet 30.

Therefore, in this second embodiment, the semiconductor chip 10 is made of resin 4 by the transfer molding method.
When it is sealed with 0, the vertical movement of the semiconductor chip 10 can be prevented more effectively.

Further, in the structure of the second embodiment, each lead 22 of the film carrier 20 is sandwiched between the reinforcing sheet 50 and the sheet base material 31 of the wiring drawing sheet 30, so that the transfer molding is performed. It is also possible to prevent resin leakage between the leads 22 which is likely to occur.

The reinforcing sheet 50 as described above can also be provided in the first embodiment shown in FIGS. 1 and 2, but when the thinning of the semiconductor device and the improvement of heat dissipation are taken into consideration. It is preferable not to provide the reinforcing sheet 50 on the lower surface side.

The embodiments of the present invention have been described above.
The present invention is not limited to the above embodiments, and various effective modifications and applications are possible based on the technical idea of the present invention. For example, although the face-up mounting has been described in the embodiment, the semiconductor chip and the film carrier according to the present invention are relative to each other, and it is needless to say that face-down mounting is also possible.

[0038]

As described above, according to the present invention,
By the leads of the wiring drawing sheet closely adhered and laminated on the film carrier, the wiring can be drawn from the electrode pad at an arbitrary position on the inner peripheral portion of the semiconductor chip.
It is possible to easily mount a semiconductor chip having a large number of pins and a small size by the TAB method, and it is possible to greatly promote the miniaturization and high density of the semiconductor device.

Moreover, since the semiconductor chip and the film carrier are integrated by the wiring drawing sheet, it is possible to remarkably improve the mechanical strength of the TAB type semiconductor device of this kind without impairing the reduction in thickness. Therefore, the vertical movement of the semiconductor chip that occurs during transfer molding can be suppressed, and an extremely stable resin mold can be formed without exposing the surface of the film carrier or the semiconductor chip or deforming the leads.

[Brief description of drawings]

FIG. 1 is a sectional view showing a state in which a semiconductor chip is mounted in a first embodiment of a semiconductor device according to the present invention.

FIG. 2 is a cross-sectional view of a semiconductor chip in a resin-sealed state in the first embodiment.

FIG. 3 is an exploded perspective view of main constituent members in the first embodiment.

FIG. 4 is a main part perspective view showing a lead portion at the time of board mounting in the first embodiment.

FIG. 5 is a sectional view of a semiconductor device according to a second embodiment of the present invention in which a semiconductor chip is resin-sealed.

FIG. 6 is a sectional view of a conventional TAB semiconductor device.

[Explanation of symbols]

 10 semiconductor chip 11 1st electrode pad 12 2nd electrode pad 20 film carrier 21 film base material 22 lead 22a inner lead 22b outer lead 30, 30 'wiring drawing sheet 31, 31' sheet base material 32, 32 'lead 32a Bonding lead part 32b Connection lead part 40 Resin 50 Reinforcing sheet

Claims (4)

[Claims] 1. A semiconductor chip in which a plurality of first electrode pads are formed on an outer peripheral portion of a chip and a plurality of second electrode pads are formed at arbitrary positions on an inner peripheral portion of the chip. A film carrier having a plurality of leads connected to the first electrode pad of the semiconductor chip, and a wiring drawing sheet having a plurality of leads connected to the second electrode pad of the semiconductor chip, The wiring drawing sheet is closely laminated on a film carrier, the lead of the film carrier is bonded to the first electrode pad of the semiconductor chip, and the lead of the wiring drawing sheet is connected to the second electrode of the semiconductor chip. A semiconductor device characterized by being bonded to a pad. 2. A plurality of the wiring drawing sheets are laminated on the film carrier.
The semiconductor device described. 3. The semiconductor according to claim 1, wherein a reinforcing sheet made of the same material as that of the wiring drawing sheet is closely fixed to the lower surfaces of the semiconductor chip and the film carrier. apparatus. 4. A semiconductor device in which the semiconductor device according to claim 1 is sealed with a resin.