JPH06232043A - Plasma device - Google Patents
Plasma deviceInfo
- Publication number
- JPH06232043A JPH06232043A JP1518493A JP1518493A JPH06232043A JP H06232043 A JPH06232043 A JP H06232043A JP 1518493 A JP1518493 A JP 1518493A JP 1518493 A JP1518493 A JP 1518493A JP H06232043 A JPH06232043 A JP H06232043A
- Authority
- JP
- Japan
- Prior art keywords
- wall
- discharge chamber
- plasma
- plasma device
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、真空中において基体上
に薄膜を形成するプラズマ装置に関し、特に薄膜性能と
作業効率の優れたプラズマ装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma device for forming a thin film on a substrate in vacuum, and more particularly to a plasma device having excellent thin film performance and work efficiency.
【0002】[0002]
【従来の技術】近年、真空を利用したプラズマ装置は半
導体分野や記録メディアの分野でそれぞれ高集積化、高
密度化を目的として広く用いられている。これらの装置
では一般に、真空槽内に放電室と基体(基体ホルダに取
り付けられ固定されている場合や基体搬送系の働きで移
動する場合などがある)を有しており、これによりプラ
ズマ化した材料を基体表面に付着させ、薄膜形成や保護
膜形成に利用している。2. Description of the Related Art In recent years, plasma devices utilizing vacuum have been widely used in the fields of semiconductors and recording media for the purpose of high integration and high density. In general, these devices have a discharge chamber and a substrate (which may be attached to a substrate holder and fixed or moved by the action of a substrate transfer system) in a vacuum chamber, and thereby plasma is generated. The material is attached to the surface of the substrate and used for thin film formation and protective film formation.
【0003】以下に従来のプラズマ装置について説明す
る。図4は従来のプラズマ装置の概略を示す断面図であ
る。図4において、1は真空槽、11は放電室、4は基
体ホルダと兼用となるカソード(陰極)、5は基体、6
は真空ポンプ、7は直流電源、8はメッシュ状アノード
(陽極)、9は不活性ガス、10はモノマーガスであ
る。A conventional plasma device will be described below. FIG. 4 is a sectional view showing the outline of a conventional plasma device. In FIG. 4, 1 is a vacuum chamber, 11 is a discharge chamber, 4 is a cathode (cathode) which also serves as a substrate holder, 5 is a substrate, 6
Is a vacuum pump, 7 is a DC power source, 8 is a mesh anode (anode), 9 is an inert gas, and 10 is a monomer gas.
【0004】以上のように構成されたプラズマ装置につ
いて、以下その動作について説明する。まず、基体ホル
ダとなるアノード4に基体5を取り付け、真空槽1と放
電室11を真空ポンプ6で10-5torr程度まで排気
する。不活性ガス9とモノマーガス10を放電室11に
供給し、直流電源7によりメッシュ状カソード8に電圧
を印可して不活性ガス9とモノマーガス10をプラズマ
状態にすると、モノマーガス10は基体上に重合膜とし
て堆積する。The operation of the plasma device configured as described above will be described below. First, the substrate 5 is attached to the anode 4 serving as the substrate holder, and the vacuum chamber 1 and the discharge chamber 11 are evacuated by the vacuum pump 6 to about 10 −5 torr. When the inert gas 9 and the monomer gas 10 are supplied to the discharge chamber 11 and a voltage is applied to the mesh-shaped cathode 8 by the DC power supply 7 to bring the inert gas 9 and the monomer gas 10 into a plasma state, the monomer gas 10 is deposited on the substrate. Deposited as a polymerized film on.
【0005】[0005]
【発明が解決しようとする課題】しかしながら上記の従
来の構成では、プラズマ状態のモノマーガス10は基体
4に堆積するだけでなく、放電室11の内側にも堆積す
るため長時間放電を続けていると、放電室11の内側に
堆積した膜の厚みが増大し、剥離したものが基体上へと
付着して不均一な膜となるといった問題点を有してい
た。However, in the above-mentioned conventional structure, the monomer gas 10 in the plasma state is not only deposited on the substrate 4 but also on the inside of the discharge chamber 11, so that the discharge is continued for a long time. Then, there is a problem that the thickness of the film deposited inside the discharge chamber 11 increases, and the peeled film adheres to the substrate to form a non-uniform film.
【0006】本発明は上記従来の問題点を解決するもの
で、長時間安定で均一な膜を提供するとともに、放電室
11内側の汚染を防ぐことにより放電室11内側の清掃
等の簡略化により作業効率の改善を提供することを目的
とする。The present invention solves the above-mentioned problems of the prior art by providing a stable and uniform film for a long time, and preventing contamination inside the discharge chamber 11 to simplify cleaning inside the discharge chamber 11 and the like. It aims to provide improved work efficiency.
【0007】[0007]
【課題を解決するための手段】この目的を達成するため
に本発明のプラズマ装置は、放電室壁が機密性を持つ外
壁と微細な穴のあいた多孔質の内壁との二重壁構造の構
成を有している。In order to achieve this object, the plasma device of the present invention has a double wall structure in which the discharge chamber wall has an outer wall having airtightness and a porous inner wall having fine holes. have.
【0008】[0008]
【作用】この構成によって、まず、放電室外壁と放電室
内壁の間の空間に不活性ガスが供給され、放電室内壁の
微細な穴から不活性ガスが放電室内壁内すなわち放電室
内に供給される。モノマーガスは放電室内壁内へ直接供
給される。電圧を印可し不活性ガスとモノマーガスがプ
ラズマ状態時には、放電室内壁の内側は不活性ガスによ
って覆われることにより、モノマーガスプラズマの放電
室内壁の内側への堆積を防止することができる。With this configuration, first, the inert gas is supplied to the space between the outer wall of the discharge chamber and the inner wall of the discharge chamber, and the inert gas is supplied into the inner wall of the discharge chamber, that is, the discharge chamber through the fine holes in the inner wall of the discharge chamber. It The monomer gas is directly supplied into the inner wall of the discharge chamber. When a voltage is applied and the inert gas and the monomer gas are in a plasma state, the inside of the discharge chamber inner wall is covered with the inert gas, so that the accumulation of the monomer gas plasma inside the discharge chamber inner wall can be prevented.
【0009】[0009]
(実施例1)以下本発明の一実施例について、プラズマ
CVD法の場合を例にとって図面を参照しながら説明す
る。(Embodiment 1) An embodiment of the present invention will be described below with reference to the drawings by taking a case of a plasma CVD method as an example.
【0010】図1は本発明の実施例の断面図であり、2
は放電室外壁、3は放電室内壁である。FIG. 1 is a sectional view of an embodiment of the present invention.
Is the outer wall of the discharge chamber, and 3 is the inner wall of the discharge chamber.
【0011】まず、基体ホルダとなるカソード4にシリ
コンウエハを取り付け、真空槽1内と放電室内壁3内
(以下放電室内)を真空ポンプ6(ロータリーポンプ,
ターボ分子ポンプ)で10-5torr程度まで排気す
る。次に不活性ガス9としてアルゴンガスを放電室内の
真空度が0.05torrになるように供給する。中の
真空度が安定し、アルゴンガスの供給量が決定したら供
給を停止、次にモノマーガス10としてメタンガスを放
電室内の真空度が0.1torrになるように供給量を
調整する。メタンガスの供給量が決定したらアルゴンガ
スを前記決定の供給量供給し、放電室内の真空度が安定
するまで5分程度待つ。真空度安定後直流電源7により
メッシュ状アノード8に800Vの電圧を印可するとア
ルゴンガスとメタンガスがプラズマ状態となり、メタン
ガスはダイアモンドライクカーボン(DLC)となって
シリコンウエハ上に堆積される。従来の構成でプラズマ
CVD処理した場合は6時間経過後から放電室内から剥
離が確認され、10時間後にはシリコンウエハ上に欠落
していたが、本発明の実施例では15時間経過後も放電
室内からの剥離は皆無であった。First, a silicon wafer is attached to the cathode 4 serving as a substrate holder, and a vacuum pump 6 (rotary pump,
Evacuate to about 10 -5 torr with a turbo molecular pump. Next, argon gas is supplied as the inert gas 9 so that the degree of vacuum in the discharge chamber is 0.05 torr. When the degree of vacuum inside is stable and the supply amount of argon gas is determined, the supply is stopped, and then the supply amount of methane gas as the monomer gas 10 is adjusted so that the degree of vacuum in the discharge chamber becomes 0.1 torr. When the supply amount of methane gas is determined, argon gas is supplied in the determined supply amount and waits for about 5 minutes until the degree of vacuum in the discharge chamber stabilizes. When a voltage of 800 V is applied to the mesh-shaped anode 8 by the DC power source 7 after the degree of vacuum is stabilized, the argon gas and the methane gas are in a plasma state, and the methane gas becomes diamond-like carbon (DLC) and is deposited on the silicon wafer. When plasma CVD processing was performed in the conventional configuration, peeling was confirmed in the discharge chamber after 6 hours had elapsed, and after 10 hours, the silicon wafer was chipped off, but in the example of the present invention, after 15 hours had elapsed, the discharge chamber remained. There was no peeling from.
【0012】(実施例2)本発明の第2の実施例につい
て、図2をもって説明する。ここでは、アルゴンガスを
内壁内側にメタンガスを外壁と内壁の間の空間に供給し
ている以外は実施例1と同様の構成である。実施例1と
同様に実験した結果、実施例1と同様の効果が得られ
た。(Second Embodiment) A second embodiment of the present invention will be described with reference to FIG. Here, the configuration is the same as that of the first embodiment except that argon gas is supplied to the inner wall and methane gas is supplied to the space between the outer wall and the inner wall. As a result of the same experiment as in Example 1, the same effect as in Example 1 was obtained.
【0013】(実施例3)本発明の第3の実施例につい
て、図3をもって説明する。ここでは、アルゴンガスと
メタンガスを外壁と内壁の間の空間に供給している。実
施例1と同様に実験した結果、実施例1と同様の効果が
得られた。(Embodiment 3) A third embodiment of the present invention will be described with reference to FIG. Here, argon gas and methane gas are supplied to the space between the outer wall and the inner wall. As a result of the same experiment as in Example 1, the same effect as in Example 1 was obtained.
【0014】[0014]
【発明の効果】以上のように本発明は、放電室壁が機密
性を持つ外壁と微細な穴のあいた多孔質の内壁との二重
壁構造からなり、前記外壁と内壁の間に空間を有するこ
とで前記内壁全体から不活性ガスを供給することがで
き、モノマーガスプラズマの放電室内壁の内側への堆積
を防止することができるため、長時間安定で均一な膜を
提供するとともに、放電室内の汚染を防ぐことにより放
電室内の清掃等の簡略化により作業効率を改善できる優
れたプラズマ装置を実現できるものである。As described above, according to the present invention, the discharge chamber wall has a double wall structure of an outer wall having airtightness and a porous inner wall having fine holes, and a space is provided between the outer wall and the inner wall. Since it is possible to supply an inert gas from the entire inner wall and to prevent the monomer gas plasma from being deposited on the inner side of the inner wall of the discharge chamber, it is possible to provide a stable and uniform film for a long time, It is possible to realize an excellent plasma device capable of improving work efficiency by simplifying cleaning of the discharge chamber and the like by preventing indoor pollution.
【図1】本発明の第1の実施例で使用したプラズマ装置
の断面図FIG. 1 is a sectional view of a plasma device used in a first embodiment of the present invention.
【図2】本発明の第2の実施例で使用したプラズマ装置
の断面図FIG. 2 is a sectional view of a plasma device used in a second embodiment of the present invention.
【図3】本発明の第3の実施例で使用したプラズマ装置
の断面図FIG. 3 is a sectional view of a plasma device used in a third embodiment of the present invention.
【図4】従来例のプラズマ装置の断面図FIG. 4 is a sectional view of a conventional plasma device.
1 真空槽 2 放電室外壁 3 放電室内壁 4 基体ホルダとなるカソード 5 基体 6 真空ポンプ 7 直流電源 8 メッシュ状アノード 9 不活性ガス 10 モノマーガス 11 放電室 1 vacuum chamber 2 outer wall of discharge chamber 3 inner wall of discharge chamber 4 cathode serving as substrate holder 5 substrate 6 vacuum pump 7 DC power supply 8 mesh-shaped anode 9 inert gas 10 monomer gas 11 discharge chamber
Claims (4)
を有するプラズマ装置において、放電室壁が機密性を持
つ外壁と微細な穴のあいた多孔質の内壁との二重壁構造
からなり、前記外壁と内壁の間に空間を有することを特
徴とするプラズマ装置。1. A plasma device having a discharge chamber for forming a thin film on a substrate in a vacuum, wherein the discharge chamber wall has a double wall structure of an outer wall having airtightness and a porous inner wall having fine holes. A plasma device having a space between the outer wall and the inner wall.
を外壁と内壁の間の空間に供給する機構を設けたことを
特徴とする請求項1記載のプラズマ装置。2. The plasma apparatus according to claim 1, further comprising a mechanism for supplying the monomer gas inside the inner wall and supplying the inert gas into the space between the outer wall and the inner wall.
を外壁と内壁の間の空間に供給する機構を設けたことを
特徴とする請求項1記載のプラズマ装置。3. The plasma apparatus according to claim 1, further comprising a mechanism for supplying the inert gas inside the inner wall and supplying the monomer gas into the space between the outer wall and the inner wall.
の間の空間に供給する機構を設けたことを特徴とする請
求項1記載のプラズマ装置。4. The plasma apparatus according to claim 1, further comprising a mechanism for supplying the inert gas and the monomer gas to the space between the outer wall and the inner wall.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1518493A JPH06232043A (en) | 1993-02-02 | 1993-02-02 | Plasma device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1518493A JPH06232043A (en) | 1993-02-02 | 1993-02-02 | Plasma device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06232043A true JPH06232043A (en) | 1994-08-19 |
Family
ID=11881749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1518493A Pending JPH06232043A (en) | 1993-02-02 | 1993-02-02 | Plasma device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06232043A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009033000A (en) * | 2007-07-30 | 2009-02-12 | Fuji Electric Systems Co Ltd | Apparatus and method for manufacturing thin-film |
KR101370755B1 (en) * | 2012-06-14 | 2014-03-06 | 주식회사 수앤테크 | Wafer processing apparatus |
CN109312460A (en) * | 2016-08-31 | 2019-02-05 | 株式会社日本制钢所 | Plasma-Atomic layer grower and atomic layer growth method |
-
1993
- 1993-02-02 JP JP1518493A patent/JPH06232043A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009033000A (en) * | 2007-07-30 | 2009-02-12 | Fuji Electric Systems Co Ltd | Apparatus and method for manufacturing thin-film |
KR101370755B1 (en) * | 2012-06-14 | 2014-03-06 | 주식회사 수앤테크 | Wafer processing apparatus |
CN109312460A (en) * | 2016-08-31 | 2019-02-05 | 株式会社日本制钢所 | Plasma-Atomic layer grower and atomic layer growth method |
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