JPH06224328A - Resin composition for sealing semiconductor - Google Patents

Resin composition for sealing semiconductor

Info

Publication number
JPH06224328A
JPH06224328A JP5029894A JP2989493A JPH06224328A JP H06224328 A JPH06224328 A JP H06224328A JP 5029894 A JP5029894 A JP 5029894A JP 2989493 A JP2989493 A JP 2989493A JP H06224328 A JPH06224328 A JP H06224328A
Authority
JP
Japan
Prior art keywords
particle size
resin composition
weight
over
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP5029894A
Other languages
Japanese (ja)
Inventor
Shinji Ishikawa
信二 石川
Takahide Ono
恭秀 大野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP5029894A priority Critical patent/JPH06224328A/en
Publication of JPH06224328A publication Critical patent/JPH06224328A/en
Withdrawn legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To increase the content of a filling material without damaging the fluidity of a semiconductor sealing resin composition and upgrade thermal expansion characteristics, thermal condition properties, moisture absorption resistance and bending strength. CONSTITUTION:The particle size distribution of a filling material blended in epoxy resin is specified: loads of the material whose particle size exceeds 48mum are 25wt.%, what is more, loads of the material whose particle sizes are below 48mum but 24mum and over, below 24mum but 12mum and over, below 12mum but 6mum and over, below 6mum but 3mum and over, below 3mum but 1.5mum and over, and below 1.5mum must range from 7 to 25wt.% respectively.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体等の電子部品の
封止材料として用いられる樹脂組成物に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin composition used as a sealing material for electronic parts such as semiconductors.

【0002】[0002]

【従来の技術】近年、電子機器の分野においては軽薄短
小化の要求が強く、小型且つ薄型を特徴とする表面実装
デバイスの使用が支配的になってきている。そして、こ
れに伴い、半導体チップを樹脂封止するための封止用樹
脂組成物には、低熱膨張性、高熱伝導性、高耐吸湿性、
高曲げ強度等の特性が強く求められている。
2. Description of the Related Art In recent years, in the field of electronic equipment, there is a strong demand for lightness, thinness, shortness, and miniaturization, and the use of surface mount devices characterized by small size and thinness has become dominant. And, along with this, the resin composition for encapsulation for resin encapsulating the semiconductor chip has low thermal expansion property, high thermal conductivity, high moisture absorption resistance,
Characteristics such as high bending strength are strongly demanded.

【0003】特に、薄型パッケージでは、吸湿した状態
ではんだリフロー時の高温にさらされると、内部に生じ
た水蒸気圧により容易にクラックが発生するので、これ
を抑えることが最重要課題となっている。
Particularly, in a thin package, when exposed to a high temperature during solder reflow while absorbing moisture, cracks easily occur due to the water vapor pressure generated inside, and it is the most important issue to suppress it. .

【0004】この問題に対する有効な対策の一つとし
て、充填材の含有量を増加させることが行われる。これ
は、吸湿量を減少させるとともに、熱膨張特性を改善し
且つ曲げ強度を増大させることによって、リフロークラ
ックの発生や伝播を防止することができる最もバランス
のとれた対策である。更に、この方法は、熱伝導特性を
も改善できるために、上述した熱膨張性、熱伝導性、耐
吸湿性、曲げ強度等の特性を全て改善できる方法と言え
る。
As one of effective measures against this problem, the content of the filler is increased. This is the most balanced measure that can prevent the occurrence and propagation of reflow cracks by reducing the amount of moisture absorption, improving the thermal expansion characteristics and increasing the bending strength. Furthermore, since this method can also improve the heat conduction characteristics, it can be said that this method can improve all of the above-mentioned characteristics such as thermal expansion, heat conductivity, moisture absorption resistance, and bending strength.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、樹脂組
成物中の充填材の含有量を大きくすると、その流動性が
低下して、封止工程で封止不良が発生したり、また、製
造効率が低下したりするという問題があった。このた
め、現状では充填材の含有量は体積百分率で70%程度
が限界とされており、半導体封止用樹脂組成物の上述し
た特性の改善が不充分であった。
However, when the content of the filler in the resin composition is increased, the fluidity of the resin composition is lowered, and a sealing failure occurs in the sealing step, and the manufacturing efficiency is improved. There was a problem that it decreased. Therefore, at present, the content of the filler is limited to about 70% in terms of volume percentage, and the above-mentioned improvement of the characteristics of the resin composition for semiconductor encapsulation was insufficient.

【0006】そこで、本発明の目的は、熱膨張性、熱伝
導性、耐吸湿性及び曲げ強度の各特性に優れ且つ流動性
にも優れた半導体封止用樹脂組成物を提供することであ
る。
[0006] Therefore, an object of the present invention is to provide a resin composition for semiconductor encapsulation which is excellent in thermal expansion property, thermal conductivity, moisture absorption resistance and bending strength and is excellent in fluidity. .

【0007】[0007]

【課題を解決するための手段】上述した課題を解決する
ために、本発明では、エポキシ樹脂と充填材とを主成分
とする半導体封止用樹脂組成物において、前記充填材
が、(a)粒子径48μm以上のものの配合量が25重
量%以下、(b)粒子径48μm未満24μm以上のも
のの配合量が7〜25重量%、(c)粒子径24μm未
満12μm以上のものの配合量が7〜25重量%、
(d)粒子径12μm未満6μm以上のものの配合量が
7〜25重量%、(e)粒子径6μm未満3μm以上の
ものの配合量が7〜25重量%、(f)粒子径3μm未
満1.5μm以上のものの配合量が7〜25重量%、
(g)粒子径1.5μm未満のものの配合量が7〜25
重量%、の粒度分布を有する。
In order to solve the above-mentioned problems, in the present invention, in the resin composition for semiconductor encapsulation containing an epoxy resin and a filler as main components, the filler is (a). The blending amount of particles having a particle diameter of 48 μm or more is 25% by weight or less, (b) the blending amount of particles having a particle diameter of less than 48 μm of 24 μm or more is 7 to 25% by weight, and (c) the blending amount of particles having a particle diameter of less than 24 μm and 12 μm or more is 7 to 25% by weight,
(D) 7 to 25% by weight of a compound having a particle size of less than 12 μm and 6 μm or more, (e) 7 to 25% by weight of a compound having a particle size of less than 6 μm and 3 μm or more, and (f) 1.5 μm of a particle size less than 3 μm. The compounding amount of the above is 7 to 25% by weight,
(G) The compounding amount of particles having a particle diameter of less than 1.5 μm is 7 to 25
% Particle size distribution.

【0008】本発明の好ましい態様においては、前記充
填材が溶融球状シリカである。
In a preferred embodiment of the present invention, the filler is fused spherical silica.

【0009】[0009]

【作用】本発明者らは、種々の充填材を用いて半導体封
止用樹脂組成物の流動性に関する研究を行った結果、流
動性には、充填材の形状にかかわらずその粒度分布が大
きな影響を及ぼすことを見出した。
The present inventors have studied the fluidity of the resin composition for semiconductor encapsulation using various fillers, and as a result, the fluidity has a large particle size distribution regardless of the shape of the filler. It was found to have an effect.

【0010】即ち、充填材の各粒径の配合量がほぼ均等
な場合に最高の流動性を示すことが分かった。しかしな
がら、完全に均等な粒度分布をもつ充填材を工業的に安
価に製造する方法は現在のところ存在せず、従って、流
動性を改善するためには、適度な範囲で粒度分布を制御
する必要があった。
That is, it was found that the highest fluidity was exhibited when the compounding amounts of the respective particle sizes of the filler were substantially equal. However, there is currently no industrially inexpensive method for producing a filler having a completely uniform particle size distribution, and therefore it is necessary to control the particle size distribution within an appropriate range in order to improve fluidity. was there.

【0011】本発明者らが見出した粒度分布の適正な範
囲は、粒子径48μm以上のものの配合量が25重量%
以下で、且つ、粒子径48μm未満24μm以上のも
の、粒子径24μm未満12μm以上のもの、粒子径1
2μm未満6μm以上のもの、粒子径6μm未満3μm
以上のもの、粒子径3μm未満1.5μm以上のもの、
及び、粒子径1.5μm未満のものの夫々の配合量が7
〜25重量%である。
The proper range of the particle size distribution found by the present inventors is that the compounding amount of particles having a particle size of 48 μm or more is 25% by weight.
And having a particle size of less than 48 μm and 24 μm or more, a particle size of less than 24 μm and 12 μm or more, a particle size of 1
Less than 2 μm and 6 μm or more, particle size less than 6 μm 3 μm
The above, those having a particle size of less than 3 μm and 1.5 μm or more,
In addition, the compounding amount of each of the particles having a particle diameter of less than 1.5 μm is 7
~ 25% by weight.

【0012】ここで、粒子径48μm以上のものを除い
た夫々の粒度区分の1つでも7重量%未満になった場
合、或いは、夫々の粒度区分の1つでも25重量%を越
えた場合には、流動性は著しく低下する。また、粒子径
48μm以上のものを含まない場合には、流動性は良好
であるが、半導体封止用樹脂組成物のスリット厚み50
μm以上でのバリ特性が劣化するという問題が生じるた
め、粒子径48μm以上のものも適当量配合する必要が
ある。但し、流動性が低下するため、その配合量は25
重量%以下に制限される。
Here, when even one of the particle size classifications excluding those having a particle diameter of 48 μm or more is less than 7% by weight, or when even one of the particle size classifications exceeds 25% by weight. Liquidity is significantly reduced. Further, when the particles having a particle diameter of 48 μm or more are not contained, the fluidity is good, but the slit thickness of the resin composition for semiconductor encapsulation is 50.
Since the problem that the burr property is deteriorated when the particle diameter is more than μm occurs, it is necessary to add an appropriate amount of particles having a particle diameter of 48 μm or more. However, since the fluidity is reduced, the compounding amount is 25
It is limited to not more than weight%.

【0013】また、半導体封止用樹脂組成物には、通
常、エポキシ樹脂と充填材の他にも、硬化剤、硬化促進
剤、離型剤、改質剤、表面処理剤等が配合されるが、本
発明では、充填材の粒度分布を制御することにより流動
性を向上させて充填材の配合量の増加を可能とするた
め、他の組成物は従来通り使用できる。
In addition to the epoxy resin and the filler, the semiconductor encapsulating resin composition usually contains a curing agent, a curing accelerator, a release agent, a modifier, a surface treatment agent and the like. However, in the present invention, the fluidity is improved by controlling the particle size distribution of the filler, and the compounding amount of the filler can be increased. Therefore, other compositions can be used conventionally.

【0014】[0014]

【実施例】表1に示す組成の各成分(単位は重量部)を
使用し、本発明実施例の組成物を得た。作成方法は、各
成分をらい潰機で混合し、ロール混練を行った後、冷却
及び粉砕して10メッシュパス品とした。また、併せ
て、各成分を同様の方法で作成した比較例を示した。充
填材を除く組成は、本発明実施例及び比較例とも同一で
ある。
Example Using each component (unit: parts by weight) of the composition shown in Table 1, a composition of an example of the present invention was obtained. As a production method, each component was mixed by a crusher, and after roll kneading, it was cooled and pulverized into a 10 mesh pass product. In addition, a comparative example in which each component was prepared by the same method was also shown. The composition excluding the filler is the same as that of the inventive example and the comparative example.

【0015】[0015]

【表1】 [Table 1]

【0016】表2に、使用した充填材の粒度分布を体積
百分率(重量百分率と実質的に一致する。)で示す。表
中、球状シリカは、粉砕し、粒度分布を調整したシリカ
を溶融して球状化したものであり、また、角形シリカ
は、溶融シリカインゴットを粉砕し、粒度分布を調整し
たものである。
Table 2 shows the particle size distribution of the filler used in terms of volume percentage (substantially equal to weight percentage). In the table, the spherical silica is obtained by crushing and adjusting the particle size distribution of fused silica to obtain a spherical shape, and the prismatic silica is obtained by crushing a fused silica ingot to adjust the particle size distribution.

【0017】[0017]

【表2】 [Table 2]

【0018】表3に、表1に示した各半導体封止用樹脂
組成物の流動性をスパイラルフローテストで評価した結
果、並びに、各々の熱膨張係数、熱伝導度、吸湿率及び
曲げ強度の測定結果を示す。
Table 3 shows the results of evaluation of the fluidity of each of the resin compositions for semiconductor encapsulation shown in Table 1 by the spiral flow test, and the thermal expansion coefficient, thermal conductivity, moisture absorption rate and bending strength of each. The measurement results are shown.

【0019】[0019]

【表3】 [Table 3]

【0020】この表3から明らかなように、本発明の実
施例では、比較例に比べ、充填材の含有量を増加させて
も充分な流動性が得られると同時に、低熱膨張性、高熱
伝導性、高耐吸湿性及び高曲げ強度をもつ半導体封止用
樹脂組成物を得ることができる。
As is apparent from Table 3, in the examples of the present invention, sufficient fluidity can be obtained even when the content of the filler is increased, and at the same time, the low thermal expansion property and the high thermal conductivity can be obtained. It is possible to obtain a resin composition for semiconductor encapsulation having high properties, high moisture absorption resistance, and high bending strength.

【0021】[0021]

【発明の効果】本発明の半導体封止用樹脂組成物では、
流動性を損なうことなく充填材の含有量を増加させるこ
とができるため、優れた熱膨張特性、熱伝導特性、耐吸
湿性及び曲げ強度を有する信頼性に優れた半導体パッケ
ージを得ることができる。
According to the resin composition for semiconductor encapsulation of the present invention,
Since the content of the filler can be increased without impairing the fluidity, it is possible to obtain a highly reliable semiconductor package having excellent thermal expansion characteristics, thermal conductivity characteristics, moisture absorption resistance, and bending strength.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 エポキシ樹脂と充填材とを主成分とする
半導体封止用樹脂組成物において、 前記充填材が、 (a)粒子径48μm以上のものの配合量が25重量%
以下、 (b)粒子径48μm未満24μm以上のものの配合量
が7〜25重量%、 (c)粒子径24μm未満12μm以上のものの配合量
が7〜25重量%、 (d)粒子径12μm未満6μm以上のものの配合量が
7〜25重量%、 (e)粒子径6μm未満3μm以上のものの配合量が7
〜25重量%、 (f)粒子径3μm未満1.5μm以上のものの配合量
が7〜25重量%、 (g)粒子径1.5μm未満のものの配合量が7〜25
重量%、 の粒度分布を有することを特徴とする半導体封止用樹脂
組成物。
1. A resin composition for semiconductor encapsulation comprising an epoxy resin and a filler as main components, wherein the filler is (a) 25% by weight of a particle diameter of 48 μm or more.
Hereinafter, (b) the compounding amount of particles having a particle diameter of less than 48 μm and 24 μm or more is 7 to 25% by weight, (c) the compounding amount of particles having a particle diameter of less than 24 μm and 12 μm or more is 7 to 25% by weight, and (d) particle diameter less than 12 μm and 6 μm The compounding amount of the above is 7 to 25% by weight, and (e) the compounding amount of the particle size of less than 6 μm and 3 μm or more is 7
-25% by weight, (f) 7 to 25% by weight of particles having a particle size of less than 3 μm and 1.5 μm or more, and (g) 7 to 25% of particles having a particle size of less than 1.5 μm.
A resin composition for semiconductor encapsulation, which has a particle size distribution of 10% by weight.
【請求項2】 前記充填材が溶融球状シリカであること
を特徴とする請求項1に記載の半導体封止用樹脂組成
物。
2. The resin composition for semiconductor encapsulation according to claim 1, wherein the filler is fused spherical silica.
JP5029894A 1993-01-26 1993-01-26 Resin composition for sealing semiconductor Withdrawn JPH06224328A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5029894A JPH06224328A (en) 1993-01-26 1993-01-26 Resin composition for sealing semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5029894A JPH06224328A (en) 1993-01-26 1993-01-26 Resin composition for sealing semiconductor

Publications (1)

Publication Number Publication Date
JPH06224328A true JPH06224328A (en) 1994-08-12

Family

ID=12288685

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5029894A Withdrawn JPH06224328A (en) 1993-01-26 1993-01-26 Resin composition for sealing semiconductor

Country Status (1)

Country Link
JP (1) JPH06224328A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8084130B2 (en) 2006-10-02 2011-12-27 Hitachi Chemical Co., Ltd. Epoxy resin molding material for sealing and electronic component device
KR20220139855A (en) 2020-02-06 2022-10-17 쇼와덴코머티리얼즈가부시끼가이샤 Epoxy resin composition for transfer molding and manufacturing method thereof, epoxy resin composition for compression molding, and electronic component device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8084130B2 (en) 2006-10-02 2011-12-27 Hitachi Chemical Co., Ltd. Epoxy resin molding material for sealing and electronic component device
KR20220139855A (en) 2020-02-06 2022-10-17 쇼와덴코머티리얼즈가부시끼가이샤 Epoxy resin composition for transfer molding and manufacturing method thereof, epoxy resin composition for compression molding, and electronic component device

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Effective date: 20000404