JPH06216020A - Substrate heat treatment device - Google Patents
Substrate heat treatment deviceInfo
- Publication number
- JPH06216020A JPH06216020A JP2380093A JP2380093A JPH06216020A JP H06216020 A JPH06216020 A JP H06216020A JP 2380093 A JP2380093 A JP 2380093A JP 2380093 A JP2380093 A JP 2380093A JP H06216020 A JPH06216020 A JP H06216020A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- substrate
- heat treatment
- side plate
- hot plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は半導体および液晶パネル
のマスクの製造プロセスにおける,レジストを塗布した
基板をベークまたは冷却する熱処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus for baking or cooling a substrate coated with a resist in the process of manufacturing a mask for semiconductors and liquid crystal panels.
【0002】[0002]
【従来の技術】マスクはガラス基板上にクロムをスパッ
タし,その上にレジストを塗布した後マスクをベーキン
グ装置の熱板上に載置してレジスト中に含まれる溶剤を
蒸発させる。2. Description of the Related Art As a mask, chromium is sputtered on a glass substrate, a resist is applied thereon, and then the mask is placed on a hot plate of a baking apparatus to evaporate a solvent contained in the resist.
【0003】その後電子線描画装置で選択的にパターン
を描画した後現像,エッチング,レジスト剥離をして完
成する。After that, a pattern is selectively drawn by an electron beam drawing apparatus, followed by development, etching, and resist stripping to complete the process.
【0004】電子線レジストとしてEBR−9(東レの
商品名)が広く使用されている。このレジストの場合,
ベーキング時,およびその後の冷却時のマスクの面内温
度分布によりレジストの露光感度が変化するので,熱板
および冷却板の上に載置するマスクの温度分布を均一に
しなければならない。EBR-9 (trade name of Toray) is widely used as an electron beam resist. For this resist,
Since the exposure sensitivity of the resist changes depending on the in-plane temperature distribution of the mask during baking and subsequent cooling, the temperature distribution of the mask placed on the hot plate and the cooling plate must be uniform.
【0005】最新の半導体用のマスクのサイズは,一辺
が150mmの正方形で,厚みが6.35mmである。The size of the latest semiconductor mask is a square having a side of 150 mm and a thickness of 6.35 mm.
【0006】熱板の上にマスクを載置してベーキングを
行う従来の方式では,マスクの厚みが厚いため,マスク
の側面からの熱放散が大きくマスクの外周,特にコーナ
ー部の温度が低くなるという欠陥がある。In the conventional method in which the mask is placed on the heating plate and baked, the thickness of the mask is large, so that the heat is largely dissipated from the side surface of the mask and the temperature of the outer periphery of the mask, especially the corner portion becomes low. There is a defect that.
【0007】図3はこの欠陥を解決するため,すでに考
案されたマスクホルダの斜視図である。FIG. 3 is a perspective view of a mask holder already devised to solve this defect.
【0008】ホルダ20にマスク21を取りつけ,マス
ク21をホルダ20と共に移動して熱板の上に載置し,
マスク21の側面からの熱の放散を少なくした。The mask 21 is attached to the holder 20, and the mask 21 is moved together with the holder 20 and placed on the hot plate.
The heat dissipation from the side surface of the mask 21 is reduced.
【0009】しかし,この方法は多数のマスクを連続的
にベーキングする場合,ホルダへの取り付け,取り外し
が複雑で自動化が困難であるという欠陥がある。However, this method has a drawback in that when a large number of masks are continuously baked, attachment and removal to and from the holder is complicated and automation is difficult.
【0010】また,この方法はホルダ20を含めて加熱
しなければならないので,熱板の温度が変化しやすく,
また,所定のベーキング温度(EBR−9の場合190
℃)になるまでの時間が長くなるという欠陥がある。In addition, since this method requires heating including the holder 20, the temperature of the hot plate easily changes,
In addition, a predetermined baking temperature (for EBR-9, 190
There is a defect that it takes a long time to reach (° C.).
【0011】さらにまた,この方法はマスクをホルダと
共に搬送するので,搬送ロボットの負荷が大きくなると
いう欠陥がある。Furthermore, this method has a defect that the load of the transfer robot becomes large because the mask is transferred together with the holder.
【0012】[0012]
【発明が解決しようとする課題】本発明の目的は,基板
側面からの熱の放散を防ぎ,温度分布の良い熱処理装置
を提供することである。SUMMARY OF THE INVENTION An object of the present invention is to provide a heat treatment apparatus which prevents heat from radiating from the side surface of the substrate and has a good temperature distribution.
【0013】また,本発明の目的は,小型で,生産効率
が高く,自動化が容易な熱処理装置を提供することであ
る。It is another object of the present invention to provide a heat treatment apparatus which is small in size, has high production efficiency, and can be easily automated.
【0014】[0014]
【問題を解決するための手段】本発明は,熱源と,搬送
溝を備えた熱板と,搬送溝を備え被処理基板の外形に相
応した側板とからなることを特徴とする。The present invention is characterized in that it comprises a heat source, a hot plate having a transfer groove, and a side plate having a transfer groove and corresponding to the outer shape of a substrate to be processed.
【0015】[0015]
【実施例】本発明を図面を参照して説明する。図1
(a)は本発明の第1の実施例の熱処理装置の正面図,
図1(b)は平面図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described with reference to the drawings. Figure 1
(A) is a front view of the heat treatment apparatus of the first embodiment of the present invention,
FIG. 1B is a plan view.
【0016】熱板1の内部にヒータ2を適切に配置し,
温度分布を均一にする。The heater 2 is appropriately arranged inside the heating plate 1,
Make the temperature distribution uniform.
【0017】側板3の厚み4はマスク9の厚さと等しい
か,またはより厚くするとマスク9の側面からの熱の放
散を効果的に少なくすることができる。If the thickness 4 of the side plate 3 is equal to or thicker than the thickness of the mask 9, heat dissipation from the side surface of the mask 9 can be effectively reduced.
【0018】また,側板3の外周5でのみ熱板1と接触
し,内周に熱伝導の悪いスペーサ6,例えば弗素樹脂を
はさむことによって熱板1の温度変化を少なくし,温度
分布を良くすることができる。Further, by only contacting the outer periphery 5 of the side plate 3 with the heat plate 1 and sandwiching the spacer 6 having poor heat conduction on the inner periphery, for example, a fluororesin, the temperature change of the heat plate 1 is reduced and the temperature distribution is improved. can do.
【0019】また,スペーサ6を除去し,単なる空隙に
することによっても,本発明を実現できることは明らか
である。Further, it is obvious that the present invention can be realized by removing the spacer 6 and forming a simple gap.
【0020】また,側板3は熱板1に固着され,高温の
ままなので温度も安定する。7a〜7dはマスクを搬送
するハンドがはいる待避溝である。溝幅は3〜4mmで
ある。Further, since the side plate 3 is fixed to the hot plate 1 and remains at a high temperature, the temperature is stable. Reference numerals 7a to 7d are evacuation grooves into which a hand for conveying the mask is inserted. The groove width is 3 to 4 mm.
【0021】図2はマスクを搬送するハンドである。マ
スク9はハンド8a〜8dに支えられて熱処理装置の上
から下降し,ハンド8a〜8dが待避溝7a〜7dには
いり,やがてマスク9は熱板1の上に載置される。ベー
キングが完了するとハンド8a〜8dが上昇し,マスク
9をすくい上げて取り出す。FIG. 2 shows a hand for carrying the mask. The mask 9 is supported by the hands 8a to 8d and descends from the top of the heat treatment apparatus, the hands 8a to 8d enter the evacuation grooves 7a to 7d, and eventually the mask 9 is placed on the hot plate 1. When the baking is completed, the hands 8a to 8d rise and the mask 9 is picked up and taken out.
【0022】図3は本発明の第2の実施例の熱処理装置
の正面図である。熱伝導性の悪いスペーサ10を側板3
の全底面に固着して,気流による熱板1の温度変化をよ
り少なくした。。FIG. 3 is a front view of the heat treatment apparatus of the second embodiment of the present invention. The spacer 10 having poor thermal conductivity is attached to the side plate 3
It adheres to the entire bottom surface of the to reduce the temperature change of the hot plate 1 due to the air flow. .
【0023】また,上記説明では,熱板1が角形である
場合について述べたが,円形にすることによっても全く
同様にして本発明を実現できることは明らかである。Further, in the above description, the case where the heat plate 1 has a rectangular shape has been described, but it is clear that the present invention can be realized in the same manner by making it a circular shape.
【0024】また,上記説明では,熱源がヒータで,被
処理基板を加熱する熱処理装置について述べたが,熱源
として低温の冷却水を使用すれば,熱板1は低温となっ
て被処理基板を冷却するので,全く同様にして基板冷却
を行う熱処理装置とすることができる。Further, in the above description, the heat source is the heater and the heat treatment apparatus for heating the substrate to be processed has been described. However, if low-temperature cooling water is used as the heat source, the temperature of the hot plate 1 becomes low and the substrate to be processed is cooled. Since it is cooled, the heat treatment apparatus can cool the substrate in exactly the same manner.
【0025】また,上記説明では,基板がマスクである
場合について述べたが,1mm以上の厚い基板であれば
全く同様にして本発明を実現できることは明らかであ
る。Further, in the above description, the case where the substrate is a mask has been described, but it is clear that the present invention can be realized in exactly the same manner as long as the substrate has a thickness of 1 mm or more.
【0026】[0026]
【発明の効果】以上説明したように,本発明は次のよう
な効果を奏するものである。As described above, the present invention has the following effects.
【0027】基板上の温度分布がよく,レジストの露光
感度の分布を均一にすることができる。The temperature distribution on the substrate is good and the exposure sensitivity distribution of the resist can be made uniform.
【0028】また,小型で,生産効率が高く,自動化が
容易な熱処理装置を実現することができる。Further, it is possible to realize a heat treatment apparatus which is small in size, has high production efficiency, and can be easily automated.
【図1(a)】本発明の第1の実施例の基板熱処理装置
の正面図である。FIG. 1A is a front view of a substrate heat treatment apparatus according to a first embodiment of the present invention.
【図1(b)】本発明の第1の実施例の基板熱処理装置
の平面図である。FIG. 1 (b) is a plan view of the substrate heat treatment apparatus of the first embodiment of the present invention.
【図2】本発明による基板熱処理装置のマスクの搬送ハ
ンドの斜視図である。FIG. 2 is a perspective view of a mask transfer hand of the substrate heat treatment apparatus according to the present invention.
【図3】本発明の第2の実施例の基板熱処理装置の正面
図である。FIG. 3 is a front view of a substrate heat treatment apparatus according to a second embodiment of the present invention.
【図4】従来方式のマスクホルダの斜視図である。FIG. 4 is a perspective view of a conventional mask holder.
1…熱板,2…ヒータ,3…側板,4…厚み,5…外
周,6…スペーサ,7a〜7d…待避溝,8a〜8d…
ハンド,9…マスク,10…スペーサ,20…ホルダ,
21…マスク。DESCRIPTION OF SYMBOLS 1 ... Heat plate, 2 ... Heater, 3 ... Side plate, 4 ... Thickness, 5 ... Outer periphery, 6 ... Spacer, 7a-7d ... Evacuation groove, 8a-8d ...
Hand, 9 ... Mask, 10 ... Spacer, 20 ... Holder,
21 ... Mask.
Claims (5)
冷却する熱処理装置において,熱源と,搬送溝を備えた
熱板と,搬送溝を備え前記被処理基板の外形に相応した
側板とからなることを特徴とした基板熱処理装置。1. A heat treatment apparatus for baking or cooling a substrate coated with a resist, comprising a heat source, a hot plate having a transfer groove, and a side plate having a transfer groove and corresponding to the outer shape of the substrate to be processed. Characteristic substrate heat treatment equipment.
悪いスペーサを挿入したことを特徴とした前記特許請求
の範囲第1項記載の基板熱処理装置。2. The substrate heat treatment apparatus according to claim 1, wherein a spacer having poor thermal conductivity is inserted between the side plate and the hot plate.
徴とした前記特許請求の範囲第1項記載の基板熱処理装
置。3. The substrate heat treatment apparatus according to claim 1, wherein the spacer is a fluororesin.
ないことを特徴とした前記特許請求の範囲第1項記載の
基板熱処理装置。4. The substrate heat treatment apparatus according to claim 1, wherein the inner periphery of the side plate is not in contact with the hot plate.
より薄くないことを特徴とした特許請求の範囲第1項記
載の基板熱処理装置。5. The substrate heat treatment apparatus according to claim 1, wherein the thickness of the side plate is not smaller than the thickness of the substrate to be processed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2380093A JPH06216020A (en) | 1993-01-18 | 1993-01-18 | Substrate heat treatment device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2380093A JPH06216020A (en) | 1993-01-18 | 1993-01-18 | Substrate heat treatment device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06216020A true JPH06216020A (en) | 1994-08-05 |
Family
ID=12120403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2380093A Pending JPH06216020A (en) | 1993-01-18 | 1993-01-18 | Substrate heat treatment device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06216020A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5817178A (en) * | 1995-05-30 | 1998-10-06 | Kabushiki Kaisha Toshiba | Apparatus for baking photoresist applied on substrate |
US6228540B1 (en) | 1998-02-26 | 2001-05-08 | Sharpe Kabushiki Kaisha | Method of forming a photomask of high dimensional accuracy utilizing heat treatment equipment |
KR100745062B1 (en) * | 2001-06-30 | 2007-08-01 | 주식회사 하이닉스반도체 | Apparatus for manufacturing semiconductor |
-
1993
- 1993-01-18 JP JP2380093A patent/JPH06216020A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5817178A (en) * | 1995-05-30 | 1998-10-06 | Kabushiki Kaisha Toshiba | Apparatus for baking photoresist applied on substrate |
US6033474A (en) * | 1995-05-30 | 2000-03-07 | Kabushiki Kaisha Toshiba | Apparatus for baking photoresist applied on substrate |
US6051371A (en) * | 1995-05-30 | 2000-04-18 | Kabushiki Kaisha Toshiba | Method for baking photoresist applied on substrate |
US6228540B1 (en) | 1998-02-26 | 2001-05-08 | Sharpe Kabushiki Kaisha | Method of forming a photomask of high dimensional accuracy utilizing heat treatment equipment |
KR100745062B1 (en) * | 2001-06-30 | 2007-08-01 | 주식회사 하이닉스반도체 | Apparatus for manufacturing semiconductor |
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