JPH0621459A - Active matrix substrate and manufacture thereof - Google Patents

Abstract

PURPOSE:To provide a substrate incorporating high-mobility thin-film transistors including a semiconductor polysilicon layer of uniform characteristics by using hydrogenated amorphous silicon in which the ratio of the total bonds of Si-H2, (Si-H2)n and Si-H3 to the bonds of Si-H is greater than a specific value. CONSTITUTION:Chromium is deposited on a glass substrate 1 by sputtering, and it is patterned by hot etching to form a gate electrode 2. An SiN film 3 and an a-Si:H film 4, as gate insulator, are sequentially deposited by plasma CVD. The a-Si:H film 4 is then crystallized by excimer laser in either manner that the bond ratio of Si-H2, (Si-H2)n and Si-H3 to Si-H is greater than 0.3 or that the median wave number of the stretching mode upsilonm is greater than 2030/cm in FT-IR measurement.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix substrate for a liquid crystal display and a method of manufacturing the same, and more particularly to a film quality and a method of manufacturing hydrogenated amorphous silicon (a-Si: H) used for a semiconductor layer of a thin film transistor. .

[0002]

2. Description of the Related Art Thin film transistor (TFT) using a hydrogenated amorphous silicon (a-Si: H) film as a channel layer (semiconductor layer)
Are widely used in liquid crystal displays (LCDs), image sensors and the like.

In particular, an LCD using a TFT as a switching element
(TFT-LCD) is thin, lightweight and low power consumption
It is applied to VDT for A, color TV, etc.
Therefore, demands for cost reduction, high definition, and large screen are increasing. Therefore, the a-Si: H film is crystallized to form polycrystalline Si (poly-
It is considered that the poly-Si film is modified to Si) and used as the channel layer of the TFT. This allows high mobility TF
It is possible to form T, and it is possible to form an LCD with a built-in driving circuit, which was not possible with a-Si TFT because of its low mobility. Also, p
When an oly-Si TFT is used in the pixel section, it has a better switching characteristic than the a-Si TFT, so the TFT size can be made smaller and its resistance can be made smaller, resulting in higher definition and larger screens. realizable.

As a means for crystallizing an a-Si: H film, 400
There is a laser anneal that heat anneals at a temperature of ℃ or more, or irradiates an excimer laser or an argon laser. In particular, a-
The Si: H film has an absorption coefficient of 10 ⁶ / cm for ultraviolet light of 400 nm or less.
Since it is large as described above, the temperature rise of the substrate can be prevented by using the excimer laser. Therefore, low-priced low-melting glass can be used.

The characteristics of the a-Si: H film significantly change depending on the bonding state of hydrogen (H) in the film. The bonding state of Si and H includes Si-
H, Si-H _2, there is a _{(Si-H 2) n,} Si-H 3. Hydrogen plays an important role in terminating dangling bonds (unbonded bonds) in the film.However, when Si-H ₂ , (Si-H ₂ ) n, and Si-H ₃ increase, Si locally grows. A region with low atomic density is created, and Si dangling bonds are likely to occur. Therefore, conventionally a semiconductor element such as TFT has been used a-Si: H film such as Si-H _{2 having} a higher degree of higher-order coupling as few as possible (Basic of amorphous semiconductors issued by Ohm: p.159-163. ). The a-Si: H film is
When the wave number of the expansion mode absorption band is evaluated by the Rie conversion infrared absorption (FT-IR) method, the center value is obtained at 2000 / cm. Also, S
The ratio of the higher order bond amount / Si—H bond amount of iH ₂ , (Si—H ₂ ) n, and Si—H ₃ is 0.1 or less.

[0006]

When crystallizing an a-Si: H film, H is first released during the temperature rising process. H starts to escape from around 400 ° C and becomes almost 0 atom% after crystallization. Therefore, the degree of freedom of Si atoms at the time of recombination of Si atoms varies depending on the bonding state of H contained in the film.

In the above conventional technique, among the four Si bonds, three bonds with Si and one bond with H. Therefore, since three are still bonded to Si even after hydrogen is released, S
The behavior of i is also limited. From this fact, the conventionally used a-Si: H film is not annealed by laser annealing or thermal annealing.
Not suitable for ly-Si conversion.

As described above, the a-Si: H film is crystallized to form poly.
-Si film, when using the poly-Si film for semiconductor devices such as TFT, it is necessary to select an a-Si: H film suitable for crystallization. Not done.

A first object of the present invention is to realize an active matrix substrate having a thin film transistor including a polycrystalline Si semiconductor layer having a high mobility and a small variation in characteristics.

A second object of the present invention is to provide a method of manufacturing the active matrix substrate.

[0011]

In order to solve the above-mentioned problems, an active matrix substrate of the present invention comprises a gate electrode, a gate insulating film, a semiconductor layer and a source layer on an insulating substrate.
In a semiconductor layer of an active matrix substrate having a thin film transistor having a drain electrode as a component
Si-H ₂ , (Si-H ₂ ) n and Si-H ₃ form a-Si: H film with a ratio of the total bond amount and Si-H bond amount of 0.3 or more, crystallize and use this It is a thing. The FT-IR measurement of the a-Si: H film having a bond amount ratio of 0.3 or more reveals that the central wavenumber of the expansion mode absorption band is 2030 / cm or more.

As a means for crystallizing the a-Si: H film having the above bond amount ratio of 0.3 or more, the a-Si: H film is subjected to excimer laser.
An energy beam such as a laser or an Ar laser may be irradiated or heat treatment may be performed at 400 ° C. or higher. For example, when irradiating an excimer laser, the energy amount is 170 mJ / cm ² or more to form poly-Si having excellent crystallinity, and poly-Si is also used.
It is preferable to set it to 230 mJ / cm ² or less so as not to give damage to the underlayer film.

By the way, aS having a ratio of the binding amount of 0.3 or more is used.
The i: H film is produced by the plasma CVD method, 1) the formation temperature is 200 ° C. or less, and 2) the total flow rate of the source gas is 10 scc.
There is a method of forming so as to satisfy any of the following conditions: m or less, 3) forming pressure: 0.3 Torr or less. Alternatively, there is also a method of forming a film by a sputtering method at a temperature of 200 ° C. or lower.

The poly-Si formed as described above is used for the TFT channel layer of the drive circuit section or the TFT channel layer of both the drive circuit section and the pixel section. Alternatively, the poly-Si and a-Si: H from the side where the channel layer of the TFT is in contact with the gate insulating film.
It has a two-layer structure.

When H is excessively contained in the a-Si: H film, when irradiated with a laser or the like, H may be bumped due to a rapid temperature rise and irregularities may occur on the surface. In such a case,
This can be prevented by performing heat treatment at about 400 ° C before irradiation.

[0016]

[Operation] When the laser is irradiated to crystallize the a-Si: H film,
In the temperature rising process, first, the contained hydrogen in the film is released. This occurs because the temperature at which H desorbs is lower than the temperature at which Si crystallizes. In fact, the temperature at which H desorbs from the a-Si: H film is about 400 ° C. With H disengaged,
The number of dangling bonds in the membrane increases, but at this time, three dangling bonds are S
From the Si atom of the Si-H bond, which is in the state of being connected to i, Si-H ₂ , (Si-
H ₂ ) n, Si-H _{3 and} other high-order Si have more degrees of freedom,
Recombination and structural relaxation during crystallization easily occur. As a result, the melting point of a-Si: H is low, and a poly-Si film having a large grain size and few lattice defects can be manufactured.

Therefore, as shown in the above-mentioned means, Si--H ₂ ,
The ratio of the total amount of higher-order bonds and the amount of Si-H bonds in (Si-H ₂ ) n and Si-H ₃ is 0.3 or more, and the central value wavenumber of the stretching mode absorption band obtained by the FT-IR method is By crystallization of a-Si: H film of 2030 / cm or more to form poly-Si and using it as a drive circuit portion or a channel layer of a TFT in both the drive circuit portion and the pixel portion, high mobility and It is possible to form a TFT with a small variation in characteristics and manufacture a TFT-LCD with a built-in drive circuit with good yield.

The same effect can be obtained even if the channel layer of the TFT has a two-layer structure of poly-Si and a-Si: H from the side in contact with the gate insulating film.

In the plasma CVD method and the sputtering method, the Si—H bond increases and the higher order bond decreases on the contrary as the formation temperature of the a-Si: H film increases. Therefore, by setting the formation temperature to 200 ° C or less, the ratio of the higher order bond amount / Si-H bond amount is reduced to 0.
It can be set to 3 or more, and the center wavenumber of the expansion mode absorption band obtained by the FT-IR method can be set to 2030 / cm or more.

Regarding the gas flow rate during film formation, the radical concentration and the growth rate are controlled by the SiH ₄ supply amount in the low flow rate range, and the radical generation rate and the growth rate are controlled by the high frequency power in the high flow rate range. . This result suggests that solid Si is deposited by the surface reaction of (Equation 1).

SiH (g) + H (g) → Si (s) + H ₂ (g) (Equation 1) However, in the low flow rate region, the SiH concentration and the H concentration are very close to each other. Therefore, in the low flow rate region, the surface reaction shown in (Equation 2) exists.

SiH (g) + H (g) → SiH ₂ (s) (Equation 2) The a-Si: H film formed under these conditions has Si-H ₂ , (Si-H ₂ ) Higher order couplings such as n increase. For example, if the flow rate of monosilane or disilane is 10 sccm or less, the ratio of the higher order bond amount / Si-H bond amount can be 0.3 or less, and the central value wavenumber of the expansion mode absorption band obtained by the FT-IR method is 2030. It can be higher than / cm.

Further, by setting the film forming pressure when forming a-Si: H by the plasma CVD method to 0.3 Torr or less,
-The quality of Si: H film can be obtained.

As means for crystallization, irradiation with an energy beam such as a laser or heat treatment at 400 ° C. or higher may be employed. Especially when using an excimer laser, a-Si: H
Has a large absorption coefficient of 10 ⁶ / cm or more for a wavelength of 400 nm or less, and is absorbed in the extreme surface layer. Therefore, the temperature rise of the substrate can be reduced, and low-cost glass having a low melting point can be used. The irradiation energy is 170 to 230 mJ because it has excellent crystallinity and does not damage the a-Si: H underlayer.
/ cm ² is desirable.

When the a-Si: H film contains an excessive amount of H, the amount of H can be reduced by performing heat treatment at about 400 ° C. before laser irradiation. By performing the heat treatment, it is possible to prevent bumping due to a rapid temperature rise of H, and to prevent unevenness.

[0026]

Embodiments of the present invention will be described below with reference to the drawings.

Example 1 An example in which the manufacturing method of the present invention is applied to a TFT will be described. As shown in Fig. 1, the glass substrate 1 was sputtered (DC100V, temperature 100 ° C) to produce Cr.
After depositing 120 nm, a gate electrode 2 pattern is formed by a photo-etching process. SiN film 3 as a gate insulating film is deposited to 350 nm (Plasma CVD method (P-CVD)) at a substrate temperature of 350 ° C
Pressure 0.6 Torr, power-60W, gas flow rate SiH ₄ : NH ₃ : N ₂ = 8: 48: 1
60sccm), a-Si: H film 4 40nm (substrate temperature 200 ℃, pressure 0.3Tor)
r, power 40 W, gas flow rate SiH ₄ : H ₂ = 14: 40 sccm). Then, irradiate the excimer laser to a-Si: H4
Crystallize.

At that time, a-Si: H4 is Si-H ₂ , (Si-H ₂ ) n, Si
It is formed so that the ratio of the amount of higher-order bonds of -H ₃ / the amount of Si-H bonds is 0.3 or more. Alternatively, as a result of FT-IR measurement, the central mode wave number ν m of the expansion mode absorption band is formed to be 2030 / cm or more. The above conditions (ratio is 0.3 or more, or νm is
The method for forming a-Si: H satisfying 2030 / cm or more) is shown below.

FIG. 2 shows the relationship between the film forming temperature T of the a-Si: H film and the central value wave number (infrared absorption wave number) νm of the expansion mode absorption band. In both the plasma-CVD (P-CVD) method and the sputtering method, νm increases as the film formation temperature decreases, and Si-H ₂ , (Si-H ₂ )
The amount of higher-order bonds of n and Si-H ₃ increases. By forming the film at a substrate temperature of 200 ° C. or lower, it is possible to form a-Si: H that satisfies the condition that the above ratio is 0.3 or higher. In addition, pressure, power,
The gas flow rate is the same as the value described in FIG.

FIG. 3 shows the relationship between the SiH ₄ gas flow rate and ν m when the a-Si: H film was formed by the P-CVD method. When the flow rate of SiH ₄ is low, the radical concentration and the growth rate are controlled by the SiH ₄ supply rate, and when the flow rate is high, the radical generation rate and the growth rate are controlled by the high frequency power. This result suggests that solid Si is deposited according to the following equation.

SiH (g) + H (g) → Si (s) + H ₂ (g) However, at a low flow rate, the SiH concentration and the H concentration are very close to each other, so that the surface reaction shown by the following equation exists.

SiH (g) + H (g) → SiH ₂ (s) Therefore, a-Si: H formed under these conditions has Si-H ₂ , (Si-H ₂ )
Higher order couplings such as n increase. By setting the flow rate of SiH ₄ to 10 sccm or less, the ratio of the higher order bond amount of Si and H / Si—H bond amount can be set to 0.3 or more. Also, νm obtained by the FT-IR method is 20
It can be over 30 / cm. The substrate temperature, pressure, and power are the same as the numerical values described in FIG.

By changing the pressure when forming a film by the plasma CVD method, νm also changes as shown in FIG. 0.3Torr
By forming the film below, a-Si: H in a bonded state similar to the above film forming method can be obtained.

As described above, 1) the film forming temperature is 200 ° C. or less,
2) SiH ₄ gas flow rate of 10 sccm or less, 3) film formation pressure of 0.3 Torr or less, by forming a film under any of the conditions, a-Si: H suitable for crystallization as shown in the present invention is formed can do. Also, regarding the gas of 2) above, instead of SiH ₄ , Si
_It can be ₂ H ₆ .

Further, depending on the forming conditions, an excessive amount of a-Si: H may be present.
H may be contained. When laser annealing is performed on such a film, H in the film is bumped due to a rapid temperature rise, and film peeling or unevenness occurs. In order to prevent these defects, it is effective to perform heat treatment at around 400 ° C. before laser annealing.

After the laser annealing, as shown in FIG. 5, SiN was deposited to a thickness of 150 nm and patterned to form a channel protective film.
Forming 5 After that, the n-type Si film 6 is deposited to 40 nm by the P-CVD method (substrate temperature 240 ° C., pressure 0.6 Torr, power 60 W, gas flow rate SiH ₄ : PH
₍₃ : H ₂ = 20: 20: 40 sccm) is deposited, and the Si film in the portion forming the TFT is processed into an island shape. Cr, Al, etc. are formed by the sputtering method,
After forming the source / drain electrode 7, finally, SiN is deposited as the passivation film 8 by 1 μm by the P-CVD method. Figure
Reference numeral 5 shows a completed TFT with an inverted stagger structure. In such an inverted stagger structure TFT, a current flows near the base interface of the channel layer. Therefore, it is desirable that the irradiation energy of the excimer laser during crystallization is 170 mJ / cm ² or more, which is necessary for crystallization, and 230 mJ / cm ² or less, which gives no damage to the underlying film. When poly-Si is manufactured by the manufacturing method of the present invention, the crystallinity is excellent (large crystal grain size and few lattice defects).
Therefore, the TFT having this poly-Si in the channel layer has high mobility and small variation. A TFT formed by the method of the present invention and a conventionally produced a-Si: H of νm = 2000 / cm
The field effect mobilities of these TFTs are shown in FIG. 6 in comparison with TFTs formed by laser annealing. The TFT formed by the method of the present invention is more preferable than the TFT formed by the conventional method.
It can be seen that the field effect mobility μfe is high and the variation is small.

Although the structure of the TFT is an inverted stagger here, the same effect can be obtained by using a normal stagger and a coplanar structure. Also, the crystallization means may be a thermal anneal.

By applying the TFT shown in this embodiment to an active matrix substrate, an image sensor, or the like, it is possible to form a structure in which a driving circuit is incorporated.

[Embodiment 2] A case where the manufacturing method of the present invention is applied to manufacture of an active matrix substrate for a liquid crystal display with a built-in drive circuit will be described below with reference to the drawings.

FIG. 7 shows an outline of an active matrix substrate in which a part of the signal side driving circuit is built in the substrate like the pixel. In this embodiment, the drive circuit built-in section 102 is a poly-Si TFT,
The pixel portion 101 is composed of an a-Si TFT. As shown in FIG. 8, an Al film having a thickness of 250 nm is deposited on the glass substrate 11 by the sputtering method and patterned on the gate electrode 12 and the scanning line, and then the surface layer is anodized. In the drawing, the left side shows the structure of the drive circuit section, and the right side shows the structure of the pixel section in the manufacturing process. Next, as shown in FIG. 9, the SiN film 14 is formed to 200 nm, aS by P-CVD method.
The i: H film 15 is continuously formed to 40 nm. Here, the formation conditions of a-Si: H were a substrate temperature of 180 ° C., a pressure of 0.3 Torr, a power of 40 W, and a gas flow rate SiH ₄ : H ₂ = 10: 40 sccm. AS formed in this way
The i: H film 15 has a high-order bond amount / S of Si-H ₂ , (Si-H ₂ ) n, Si-H _3, etc.
The iH binding ratio is 0.45. After forming the a-Si: H film 15,
The excimer laser is locally irradiated with an energy density of 200 mJ / cm ² only on the part constituting the drive circuit. As a result, the drive circuit unit is converted from a-Si: H to poly-Si16.

After that, as shown in FIG. 10, a-Si: H of 150 nm is formed on the a-Si: H film 15 and the poly-Si film 16 by the P-CVD method, and the n-type is formed.
A Si layer 17 is continuously formed in a thickness of 40 nm, and the Si film on the portion where the TFT is formed is processed into an island shape. Next, as shown in FIG. 11, an ITO film 18 serving as a pixel electrode is formed in the pixel portion by a sputtering method and then patterned. After that, as shown in FIG. 12, Cr19 was formed by the sputtering method as the source / drain electrode and the signal line.
60 nm and Al20 of 400 nm are formed and patterned. Using the source and drain electrodes as a mask, n on the TFT channel
The type Si17 is selectively removed. Finally, as shown in FIG. 13, as the passivation film 21, a SiN film of 1 μm is formed by the P-CVD method.
The desired active matrix substrate is completed by the deposition.

As in this embodiment, Si--H ₂ , (Si--H ₂ ) n, Si--
Les higher order coupling is large membrane H ₃ - Zaani - By Le, conventional Si-H containing many bonds a-Si: H Les - Zaani - than Le, the crystal grain size is large and the grating Poly-Si with few defects
A membrane can be obtained. Therefore, the drive circuit unit is configured.
The TFT has high mobility and the variation in characteristics is small. Characteristics obtained in the driver circuit portion TFT in the present embodiment is ^{30cm 2 / V · s (±} 3cm 2 / V · s), the pixel portion TFT is ^{0.35cm 2 / V · s (±} 0.02cm 2 / V · s) To be Therefore, an active matrix substrate with a built-in drive circuit can be manufactured with good yield.

In this embodiment, the TFT structure is an inverted stagger structure, but the same effect can be obtained by using a positive stagger structure or a coplanar structure. Further, in the present embodiment, the TFT channel layer of the drive circuit built-in portion has a two-layer structure of a-Si: H / poly-Si, but a method using a channel protective film 22 as shown in FIG. 14 may be used. .

According to the manufacturing method of this embodiment, the pixel portion TFT is S
iH ₂ , (Si-H ₂ ) n, Si-H ₃ high-order bonding amount / Si-H bonding amount ratio of a-Si: H is 0.3 or more in the channel layer, the drive circuit T
The FT has a structure having a-Si: H / poly-Si in the channel layer.
When the FT-IR measurement is performed on the channel layer of the pixel section TFT, the central wavenumber of the expansion mode absorption band is 2030 / cm or more.

In this embodiment, an excimer laser is used as the laser anneal, but the same effect can be obtained with an argon laser or other electron beam.

Further, in this embodiment, only the driving circuit portion is irradiated with the laser to form poly-Si. However, the present invention can be applied to all TFTs that constitute an active matrix substrate. Instead of crystallizing only the driving circuit portion as shown in this embodiment, the pixel portion is also crystallized. As a result, the switching characteristics of the pixel section TFT are improved, the TFT size can be reduced, and high definition and large screen of the TFT-LCD can be realized.

[0047]

According to the present invention, the active matrix substrate is composed of a thin film transistor comprising a gate electrode, a gate insulating film, a semiconductor layer and a source / drain electrode formed on an insulating substrate, The semiconductor layer of the thin film transistor, Si-H ₂ , (Si-H ₂ ) n and the total amount of higher-order bonds of Si-H ₃ and
Modification by irradiating an energy beam such as an excimer laser or an Ar laser on a hydrogenated amorphous Si film having a Si-H bond ratio of 0.3 or more, or by heat treatment at 400 ° C or more. Since the above-mentioned polycrystal Si is used, the hydrogenated amorphous Si described above becomes a polycrystal Si having a large grain size and few lattice defects because recrystallization and structural relaxation at the time of crystallization easily occur, resulting in high field effect mobility. It is possible to obtain an active matrix substrate having a thin film transistor which is high and has a small variation in its characteristics.

Further, according to the present invention, a method for manufacturing an active matrix substrate is obtained by forming a gate electrode, a gate insulating film, a semiconductor layer and a source / drain electrode on an insulating substrate. In the manufacturing method of the active matrix substrate having, the semiconductor layer of the thin film transistor Si-H ₂ , (Si-H ₂ ) n and Si-H ₃ ratio of the total bonding amount and Si-H bonding amount is 0.3 or more hydrogen. Amorphous silicon is formed, and the hydrogenated amorphous silicon is heated at 400 ° C. or higher or irradiated with an energy beam such as a laser so as to be reformed into polycrystalline silicon. Since the above hydrogenated amorphous Si easily undergoes recrystallization and structural relaxation at the time of crystallization, it has a large grain size and can be modified into polycrystalline Si with a small number of lattice defects. It is possible to manufacture thin film transistors with a small variation in Therefore, by using this thin film transistor as a pixel driving circuit, an active matrix substrate for a liquid crystal display, which is built in on the same substrate as the pixel, can be manufactured with high yield.

[Brief description of drawings]

FIG. 1 is a diagram showing a cross-sectional structure during laser irradiation in a TFT formation process.

FIG. 2 is a diagram showing a relationship between a film forming temperature and an infrared absorption wave number.

FIG. 3 is a diagram showing a relationship between a SiH ₄ gas flow rate and an infrared absorption wave number.

FIG. 4 is a diagram showing a relationship between film forming pressure and infrared absorption wave number.

FIG. 5: poly-Si TFT formed by the manufacturing method of the present invention
It is a figure which shows the cross-section.

FIG. 6 is a diagram showing the dependence of mobility on laser irradiation energy.

FIG. 7 is a schematic view of an active matrix substrate in which a drive circuit is partially incorporated.

FIG. 8 is a diagram showing a cross-sectional structure of an active matrix substrate after anodization.

FIG. 9 is a diagram showing a cross-sectional structure of an active matrix substrate after laser irradiation.

FIG. 10 is a diagram showing a cross-sectional structure of an active matrix substrate after formation of a channel layer.

FIG. 11 is a diagram showing a cross-sectional structure of an active matrix substrate after forming pixel electrodes.

FIG. 12 is a view showing a cross-sectional structure of an active matrix substrate after forming a source / drain region.

FIG. 13 is a diagram showing a cross-sectional structure of an active matrix substrate.

FIG. 14 is a diagram showing a cross-sectional structure of a channel protective film type active matrix substrate.

[Explanation of symbols]

1 Insulating Substrate 2 Gate Electrode 3 Gate Insulating Film 4 Hydrogenated Amorphous Silicon Film 5 Channel Protection Film 6 n-Type Silicon Film 7 Source / Drain Electrode 8 Passivation Film 11 Glass Substrate 12 Al Film 13 Al ₂ O ₃ film 14 SiN film 15 a-Si: H film 16 poly-Si film 17 n-type Si film 18 ITO film 19 Cr film 20 Source / drain Al film 21 Passivation SiN film 101 Pixel TFT Forming area 102 forming area of the driving circuit TFT

Claims (20)

[Claims] 1. An active matrix substrate having a thin film transistor having a gate electrode, a gate insulating film, a semiconductor layer and a source / drain electrode as constituent elements on an insulating substrate, wherein Si-H is formed on the semiconductor layer. _{2, (Si-H 2)} n , and total binding of Si-H ₃ and Si-H bond content of hydrogen ratio is 0.3 or more and amorphous S
An active matrix substrate characterized by using i. 2. A plurality of first thin film transistors for driving pixel electrodes for displaying an image on an insulating substrate,
In an active matrix substrate having a plurality of second thin film transistors forming a circuit for driving the plurality of first thin film transistors, Si-H ₂ , (Si-H) in the semiconductor layers of the first and second thin film transistors, ₂ ) Hydrogenated amorphous S with a ratio of total bond amount of n and Si-H ₃ to Si-H bond amount of 0.3 or more
An active matrix substrate characterized by using i. 3. A plurality of first thin film transistors for driving pixel electrodes for displaying an image on an insulating substrate,
In an active matrix substrate having a plurality of second thin film transistors forming a circuit for driving the plurality of first thin film transistors, Si-H ₂ , (Si-H ₂ ) n in the semiconductor layer of the second thin film transistor. An active matrix substrate characterized by using hydrogenated amorphous Si having a ratio of the total amount of Si—H ₃ bonds to the amount of Si—H bonds of 0.3 or more. 4. An active matrix substrate having a thin film transistor having a gate electrode, a gate insulating film, a semiconductor layer and a source / drain electrode as constituent elements on an insulating substrate, wherein Si-H is formed on the semiconductor layer. _{2, (Si-H 2)} n , and total binding of Si-H ₃ and Si-H bond content of hydrogen ratio is 0.3 or more and amorphous S
An active matrix substrate characterized by using polycrystalline Si formed by heating i above 400 ° C. or irradiating an energy beam such as a laser. 5. A plurality of first thin film transistors for driving a pixel electrode for displaying an image on an insulating substrate,
In an active matrix substrate having a plurality of second thin film transistors forming a circuit for driving the plurality of first thin film transistors, Si-H ₂ , (Si-H) in the semiconductor layers of the first and second thin film transistors, ₂ ) Hydrogenated amorphous S with a ratio of total bond amount of n and Si-H ₃ to Si-H bond amount of 0.3 or more
An active matrix substrate characterized by using polycrystalline Si formed by heating i above 400 ° C. or irradiating an energy beam such as a laser. 6. A plurality of first thin film transistors for driving a pixel electrode for displaying an image on an insulating substrate,
In an active matrix substrate having a plurality of second thin film transistors forming a circuit for driving the plurality of first thin film transistors, Si-H ₂ , (Si-H ₂ ) n in the semiconductor layer of the second thin film transistor. And hydrogenated amorphous Si having a ratio of the total amount of Si-H ₃ bonds to the amount of Si-H bonds of 0.3 or more is 400
An active matrix substrate characterized by using polycrystalline Si formed by heating at a temperature of ℃ or more or by irradiating an energy beam such as a laser. 7. An active matrix substrate having a thin film transistor including a gate electrode, a gate insulating film, a semiconductor layer and a source / drain electrode on an insulating substrate, wherein the semiconductor layer of the thin film transistor is formed by: gate - DOO from the side which is in contact with the insulating _{film, Si-H 2, (Si} -H 2) n , and Si-H ₃ of total binding and Si-H bond content and ratio of 0.3 or more hydrogenated amorphous Si
Having a two-layer structure composed of polycrystalline Si and hydrogenated amorphous Si formed by heating at 400 ° C. or higher or irradiating an energy beam such as a laser. substrate. 8. A plurality of first thin film transistors for driving a pixel electrode for displaying an image on an insulating substrate,
In an active matrix substrate having a plurality of second thin film transistors forming a circuit for driving the plurality of first thin film transistors, the semiconductor layers of the first and second thin film transistors, the side in contact with the gate insulating film. From the above, hydrogenated amorphous Si having a ratio of Si-H ₂ , (Si-H ₂ ) n, and total bond amount of Si-H ₃ and Si-H bond amount of 0.3 or more is heated at 400 ° C or more. Alternatively, an active matrix substrate having a two-layer structure composed of polycrystalline Si formed by irradiating an energy beam such as a laser and hydrogenated amorphous Si. 9. A plurality of first thin film transistors for driving a pixel electrode for displaying an image on an insulating substrate,
In an active matrix substrate having a plurality of second thin film transistors forming a circuit for driving the plurality of first thin film transistors, the semiconductor layer of the second thin film transistor, from the side in contact with the gate insulating film, Si
-H ₂ , (Si-H ₂ ) n and Si-H ₃ hydrogenated amorphous Si having a ratio of the total bond amount to the Si-H bond amount of 0.3 or more is heated at 400 ° C or more or An active matrix substrate having a two-layer structure composed of polycrystalline Si formed by irradiating an energy beam such as Z and the like and hydrogenated amorphous Si. 10. The thin film transistor has an inverted staggered structure.
The active matrix substrate according to any one of 6, 7, 8 and 9. 11. The gate insulating film of the thin film transistor is made of SiNx.
The active matrix substrate according to any one of 4, 5, 6, 7, 8, 9 and 10. 12. A method of manufacturing an active matrix substrate having a thin film transistor having a gate electrode, a gate insulating film, a semiconductor layer and a source / drain electrode as constituent elements on an insulating substrate, wherein the semiconductor layer is Si-H ₂ , (Si-H ₂ )
A hydrogenated amorphous Si having a ratio of the total bond amount of n and Si-H ₃ to the Si-H bond amount of 0.3 or more is formed, and the hydrogenated amorphous Si is heated at 400 ° C. or higher, or A method for manufacturing an active matrix substrate, which is characterized in that the active matrix substrate is formed by modifying it into polycrystalline Si by irradiating an energy beam such as Z. 13. A plurality of first thin film transistors for driving a pixel electrode for displaying an image and a plurality of second thin film transistors forming a circuit for driving the plurality of first thin film transistors on an insulating substrate. In the method for manufacturing an active matrix substrate having a thin film transistor,
The semiconductor layers of the first and second thin film transistors are Si-H ₂ , (Si-H
₂ ) Hydrogenated amorphous Si having a ratio of the total bond amount of n and Si-H ₃ to the Si-H bond amount of 0.3 or more is formed, and the hydrogenated amorphous Si is heated at 400 ° C. or higher, or -A method of manufacturing an active matrix substrate, characterized in that the active matrix substrate is formed by modifying it into polycrystalline Si by irradiating it with an energy beam. 14. A plurality of first thin film transistors for driving a pixel electrode for displaying an image and a plurality of second thin film transistors forming a circuit for driving the plurality of first thin film transistors on an insulating substrate. In the method for manufacturing an active matrix substrate having a thin film transistor,
The semiconductor layer of the thin film transistor of 2 is Si-H ₂ , (Si-H ₂ ) n and
By heating hydrogenated amorphous Si with a ratio of total Si-H ₃ bond to Si-H bond of 0.3 or more at 400 ℃ or more, or by irradiating an energy beam such as a laser. A method for manufacturing an active matrix substrate, which is characterized by being modified to form polycrystalline Si. 15. A method of manufacturing an active matrix substrate having a thin film transistor including a gate electrode, a gate insulating film, a semiconductor layer, and a source / drain electrode on an insulating substrate, wherein the semiconductor of the thin film transistor is used. The layer is on the side in contact with the gate insulating film, Si-H ₂ , (Si-H ₂ ) n and S
The hydrogenated amorphous Si having a ratio of the total amount of iH ₃ bonded to the amount of Si-H bonded of 0.3 or more is formed, and the hydrogenated amorphous Si is heated at 400 ° C. or more, or laser or the like. By irradiating an energy beam to reform the polycrystalline Si and forming hydrogenated amorphous Si on the polycrystalline Si, a two-layer structure of polycrystalline Si and hydrogenated amorphous Si is obtained. A method for manufacturing an active matrix substrate, comprising: 16. A plurality of first thin film transistors for driving a pixel electrode displaying an image and a plurality of second thin films forming a circuit for driving the plurality of first thin film transistors on an insulating substrate. In the method for manufacturing an active matrix substrate having a thin film transistor,
The semiconductor layer of the first and second thin film transistor gate - on the side in contact with the gate insulating film, Si-H _2, and the total binding amount of (Si-H ₂₎ n, and Si-H ₃
Hydrogenated amorphous Si having a ratio with the Si-H bond amount of 0.3 or more is formed, and the hydrogenated amorphous Si is heated at 400 ° C. or more or irradiated with an energy beam such as a laser. By reforming into polycrystalline Si and forming hydrogenated amorphous Si on the polycrystalline Si to form a two-layer structure of polycrystalline Si and hydrogenated amorphous Si. Matrix substrate manufacturing method. 17. A plurality of first thin film transistors for driving a pixel electrode for displaying an image and a plurality of second thin film transistors forming a circuit for driving the plurality of first thin film transistors on an insulating substrate. In the method for manufacturing an active matrix substrate having a thin film transistor,
2 of the thin film transistor of the semiconductor layer is gate - on the side in contact with the gate insulating film, Si-H _2, (Si-H ₂₎ ratio between the total binding amount and the Si-H bond content in the n and Si-H ₃ is less than 0.3 Hydrogenated amorphous Si is formed, and the hydrogenated amorphous Si is heated at 400 ° C. or higher or is irradiated with an energy beam such as a laser to be reformed into polycrystalline Si. By forming hydrogenated amorphous Si on polycrystalline Si,
A method for manufacturing an active matrix substrate, which has a two-layer structure of Si and hydrogenated amorphous Si. 18. An excimer laser is used as the laser, wherein the laser is an excimer laser.
18. The method for manufacturing an active matrix substrate according to 16 or 17. 19. The irradiation energy of the excimer laser
The 170 mJ / cm ² or more 230 mJ / cm ² or less and the active matrix substrate manufacturing method according to claim 18, characterized by. 20. The method of manufacturing an active matrix substrate according to claim 19, wherein the hydrogenated amorphous Si is heat-treated as a pre-process of irradiating the excimer laser.