JPH062123A - Film forming device by sputtering - Google Patents
Film forming device by sputteringInfo
- Publication number
- JPH062123A JPH062123A JP16484492A JP16484492A JPH062123A JP H062123 A JPH062123 A JP H062123A JP 16484492 A JP16484492 A JP 16484492A JP 16484492 A JP16484492 A JP 16484492A JP H062123 A JPH062123 A JP H062123A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- reaction vessel
- cathode
- electrodes
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は太陽電池、薄膜トランジ
スタ、電子写真感光体、光センサ、液晶ディスプレイ、
光学膜及び装飾品などに使用される薄膜の製造装置に関
するものである。The present invention relates to a solar cell, a thin film transistor, an electrophotographic photosensitive member, an optical sensor, a liquid crystal display,
The present invention relates to an apparatus for producing a thin film used for an optical film and a decorative article.
【０００２】[0002]
【従来の技術】図４に従来より用いられているスパッタ
リング成膜装置を示す。同図において、気密の反応容器
１内には、第１の電極（陽極）２、薄膜を付着すべき対
象の基板３、薄膜材料のターゲット４、第２の電極（陰
極）５が設置されている。第１の電極２は、第１の電力
ケーブル６によりアース７と電気的に接続されている。
第２の電極５は、第２の電力ケーブル８を介して高周波
電源９に電気的に接続されている。また、高周波電源９
は、第３の電力ケーブル１０を介してアース７と接続さ
れている。なお、第２の電極５は、絶縁物１１により反
応容器１と電気的に絶縁されている。さらに、第２の電
極５は、温度上昇を防ぐため、冷却水供給制御装置１２
及び冷却管１３により冷却されている。2. Description of the Related Art FIG. 4 shows a conventional sputtering film forming apparatus. In the figure, in an airtight reaction container 1, a first electrode (anode) 2, a substrate 3 to which a thin film is to be attached, a thin film material target 4, and a second electrode (cathode) 5 are installed. There is. The first electrode 2 is electrically connected to the ground 7 by the first power cable 6.
The second electrode 5 is electrically connected to the high frequency power supply 9 via the second power cable 8. In addition, the high frequency power source 9
Are connected to ground 7 via a third power cable 10. The second electrode 5 is electrically insulated from the reaction container 1 by the insulator 11. Further, the second electrode 5 has a cooling water supply control device 12 in order to prevent a temperature rise.
And is cooled by the cooling pipe 13.
【０００３】反応容器１には第１のバルブ１５を介して
真空ポンプ１４が接続されており、これにより反応容器
１内のガスが吸引されて排出される。他方、反応容器１
には第２のバルブ１６及び流量調整器１７を介してＡｒ
ガス供給源１８が接続されており、これにより反応容器
１内にプラズマ発生用ガスとしてＡｒが供給される。反
応容器１内の圧力は真空計１９で測定される。A vacuum pump 14 is connected to the reaction vessel 1 via a first valve 15, whereby the gas in the reaction vessel 1 is sucked and discharged. On the other hand, the reaction vessel 1
To the Ar via the second valve 16 and the flow rate regulator 17.
A gas supply source 18 is connected, and thereby Ar is supplied into the reaction vessel 1 as a plasma generating gas. The pressure inside the reaction vessel 1 is measured by a vacuum gauge 19.
【０００４】図４の装置を用いて、例えばＺｎＯ薄膜を
製造する場合について説明する。第１の電極２上に基板
３を載せ、ターゲット４としてＺｎＯ焼結体を固着す
る。なお、ＺｎＯ焼結体は、ＺｎＯ粉末を８００〜８５
０℃で約１時間仮焼した後、約１００ｋｇ／ｃｍ2 の圧
力で必要な形にプレス成形し、９３０℃で約２時間焼成
することにより作製する。反応容器１内にＡｒガス供給
源１８から流量調整器１７及び第２のバルブ１６を介し
てＡｒガスを導入し、かつ第１のバルブ１５を介して真
空ポンプ１４により吸引して、反応容器１内の圧力を約
０．０１Ｔｏｒｒに設定する。他方、高周波電源９、第
２及び第３のケーブル８、１０を介して、第１及び第２
の電極２、５に高周波電源を印加する。この結果、Ａｒ
ガスはグロー放電プラズマとなり、その中に多数存在す
るＡｒ+ は第２の電極５の方向へ加速され、ターゲット
４に衝突する。ターゲット４は上記Ａｒ+ の衝突により
スパッタされ、スパッタ粒子は第１の電極２上に設置さ
れた基板３上に堆積する。なお、基板３の材料として
は、ガラス、石英、サファイアなどが用いられる。A case of producing, for example, a ZnO thin film using the apparatus shown in FIG. 4 will be described. A substrate 3 is placed on the first electrode 2, and a ZnO sintered body is fixed as a target 4. In addition, the ZnO sintered body is a ZnO powder of 800 to 85.
After calcination at 0 ° C for about 1 hour, about 100 kg / cm 2 It is produced by press-molding into a required shape under the pressure of and baking at 930 ° C. for about 2 hours. Ar gas is introduced into the reaction vessel 1 from the Ar gas supply source 18 through the flow rate regulator 17 and the second valve 16 and is sucked by the vacuum pump 14 through the first valve 15 to obtain the reaction vessel 1 The internal pressure is set to about 0.01 Torr. On the other hand, through the high frequency power supply 9 and the second and third cables 8 and 10, the first and second cables
A high frequency power source is applied to the electrodes 2 and 5. As a result, Ar
The gas becomes glow discharge plasma, and a large number of Ar + present in it Are accelerated in the direction of the second electrode 5 and collide with the target 4. Target 4 is Ar + And the sputtered particles are deposited on the substrate 3 placed on the first electrode 2. As the material of the substrate 3, glass, quartz, sapphire, or the like is used.
【０００５】[0005]
【発明が解決しようとする課題】従来の装置では、基板
３が電極２の上に載せられるので、一度に処理される基
板３の大きさは電極２の大きさによって制限される。一
方、電源９が高周波数（例えば１３．５６ＭＨｚ）であ
り、高周波による表皮効果により電流の大部分が表面
（約０．０１ｍｍ深さ以内）を流れるため、電気抵抗が
増加しプラズマは電極中央部以外では一様にならない。
このため、電極面積を拡大したとしても、スパッタで一
様に成膜できる面積は直径約５０ｍｍが限界であった。
したがって、従来の装置では大面積の成膜は非常に困難
であり、実際上は実現できなかった。本発明は大面積の
成膜が可能なスパッタリング成膜装置を提供することを
目的とする。In the conventional apparatus, since the substrate 3 is placed on the electrode 2, the size of the substrate 3 processed at one time is limited by the size of the electrode 2. On the other hand, the power source 9 has a high frequency (for example, 13.56 MHz), and most of the current flows on the surface (within a depth of about 0.01 mm) due to the skin effect due to the high frequency, so that the electric resistance increases and the plasma is generated at the center of the electrode. It is not uniform except for.
For this reason, even if the electrode area was increased, the area where uniform film formation by sputtering was about 50 mm was the limit.
Therefore, it is very difficult to form a large-area film with the conventional apparatus, and it has not been practically possible. An object of the present invention is to provide a sputtering film forming apparatus capable of forming a large area film.
【０００６】[0006]
【課題を解決するための手段】本発明のスパッタリング
成膜装置は、反応容器と、該反応容器内に不活性ガスま
たは反応ガスを導入し、排出する手段と、該反応容器内
に収納された放電用電極と、該放電用電極に電力を供給
する電源と、スパッタリング用ターゲット材とを有し、
反応容器内に設置された基板表面にスパッタリングによ
る薄膜を形成する成膜装置において、上記放電用電極の
陽極として複数の長尺平板電極を、陰極として複数の長
尺円筒形電極と交互に対向して設置し、かつスパッタリ
ング用ターゲット材を上記長尺円筒形電極表面に固着さ
せるとともに、２枚の基板を、上記対向設置された陽極
及び陰極を挟むように設置したことを特徴とするもので
ある。The sputtering film-forming apparatus of the present invention comprises a reaction container, a means for introducing and discharging an inert gas or a reaction gas into the reaction container, and a reaction container housed in the reaction container. A discharge electrode, a power supply for supplying power to the discharge electrode, and a sputtering target material,
In a film forming apparatus for forming a thin film by sputtering on the surface of a substrate installed in a reaction vessel, a plurality of long flat plate electrodes as the anode of the discharge electrode and a plurality of long cylindrical electrodes as the cathode are alternately opposed to each other. And the target material for sputtering is fixed to the surface of the long cylindrical electrode, and two substrates are placed so as to sandwich the anode and the cathode which are placed opposite to each other. .
【０００７】本発明の装置においては、反応容器を囲
み、放電用電極間に働く電界とほぼ直交する向きの磁界
を発生するコイルを設け、そのコイルに交流電力を供給
する電源を設けることが好ましい。In the apparatus of the present invention, it is preferable to provide a coil which surrounds the reaction vessel and generates a magnetic field in a direction substantially orthogonal to the electric field working between the discharge electrodes, and to provide a power source for supplying AC power to the coil. .
【０００８】[0008]
【作用】本発明では放電用電極（陽極）として従来の平
板形電極に代えて複数の長尺平板電極を用い、かつ陰極
として複数の長尺円筒形電極を用い、これらを交互に対
向して設置しているので、電極周りの電界が強くなり、
プラズマの発生が容易になっている。また、放電用電極
管の電界方向と直交する向きに磁界を印加し、かつその
磁界方向を正と負に交互に変化させるようにすれば、陽
極から陰極へ移動するイオンの飛散方向を揺動させるこ
とができる。その結果、スパッタリング現象により飛散
するスパッタ粒子の基板表面における堆積速度分布を一
様に平均化できる。さらに、放電用電極を挟む形で一度
に２枚の基板を設置するので、従来に比べて生産性を２
倍以上に向上できる。In the present invention, a plurality of long flat plate electrodes are used as the discharge electrodes (anode) instead of the conventional flat plate electrodes, and a plurality of long cylinder electrodes are used as the cathodes, which are alternately opposed to each other. Since it is installed, the electric field around the electrode becomes stronger,
Plasma is easily generated. If a magnetic field is applied in a direction orthogonal to the electric field direction of the discharge electrode tube and the magnetic field direction is alternately changed between positive and negative, the scattering direction of the ions moving from the anode to the cathode is oscillated. Can be made. As a result, it is possible to uniformly average the deposition rate distribution of the sputtered particles scattered by the sputtering phenomenon on the substrate surface. In addition, since two substrates are installed at a time with the discharge electrode sandwiched between them, productivity is improved compared to the conventional product.
It can be more than doubled.
【０００９】[0009]
【実施例】以下、本発明の実施例を図面を参照して説明
する。Embodiments of the present invention will be described below with reference to the drawings.
【００１０】図１は本発明の一実施例のスパッタリング
成膜装置を示す断面図である。図２は同装置の陽極、陰
極及び基板の配置状態を示す斜視図である。なお、図４
に示す従来の装置と同一の機能を有する部材には同一の
符号を付している。FIG. 1 is a sectional view showing a sputtering film forming apparatus according to an embodiment of the present invention. FIG. 2 is a perspective view showing the arrangement of the anode, cathode and substrate of the same device. Note that FIG.
The members having the same functions as those of the conventional device shown in FIG.
【００１１】１は反応容器であり、真空度１×１０-8Ｔ
ｏｒｒ程度の気密性を有する。２は陽極であり、複数の
長尺平板電極からなっている。５は陰極であり、複数の
長尺円筒形電極からなっている。４はターゲットであ
り、陰極５の表面に付着されている。ターゲット４は目
的とする材料、例えばＺｎＯからなり、従来と同じよう
に作製される。これらの陽極２及び表面にターゲット４
が付着された陰極５は交互に対向して設置され、さらに
これらの陽極２及び陰極４を挟むように２枚の基板３
ａ、３ｂが設置されている。なお、陰極５は冷却管１３
を介して冷却水供給制御装置１２に接続されており、温
度上昇が防止できるようになっている。複数の陽極２は
第１の電力ケーブル６を介してアース７と電気的に接続
されている。第１の電力ケーブル６は第１の絶縁物１１
ａにより反応容器１と電気的に絶縁されている。複数の
陰極５は、第２の電力ケーブル８を介して高周波電源９
に電気的に接続されている。また、高周波電源９は、第
３の電力ケーブル１０を介してアース７と接続されてい
る。高周波電源９からは例えば周波数１３．５６ＭＨｚ
の交流電力が供給される。なお、陰極５は、第２の絶縁
物１１ｂにより反応容器１と電気的に絶縁されている。Reference numeral 1 is a reaction vessel having a degree of vacuum of 1 × 10 -8 T
It has airtightness of about orr. Reference numeral 2 is an anode, which is composed of a plurality of long flat plate electrodes. Reference numeral 5 denotes a cathode, which is composed of a plurality of elongated cylindrical electrodes. Reference numeral 4 is a target, which is attached to the surface of the cathode 5. The target 4 is made of a desired material, for example, ZnO, and is manufactured in the same manner as the conventional one. These anode 2 and target 4 on the surface
The cathodes 5 to which are attached are alternately arranged so as to face each other, and two substrates 3 are sandwiched so that the anode 2 and the cathode 4 are sandwiched therebetween.
a and 3b are installed. The cathode 5 is a cooling pipe 13.
It is connected to the cooling water supply control device 12 via the so that the temperature rise can be prevented. The plurality of anodes 2 are electrically connected to the ground 7 via the first power cable 6. The first power cable 6 is a first insulator 11
It is electrically insulated from the reaction vessel 1 by a. The plurality of cathodes 5 are connected to the high frequency power source 9 via the second power cable 8.
Electrically connected to. Further, the high frequency power supply 9 is connected to the ground 7 via the third power cable 10. From the high frequency power source 9, for example, a frequency of 13.56 MHz
AC power is supplied. The cathode 5 is electrically insulated from the reaction vessel 1 by the second insulator 11b.
【００１２】反応容器１には第１のバルブ１５を介して
真空ポンプ１４が接続されており、これにより反応容器
１内のガスが吸引されて排出される。他方、反応容器１
には第２のバルブ１６及び流量調整器１７を介してＡｒ
ガス供給源１８が接続されており、これにより反応容器
１内にプラズマ発生用ガスとしてＡｒが供給される。反
応容器１内の圧力は真空計１９で測定される。さらに、
反応容器１の周囲には磁界発生用のコイル１００が設置
されている。このコイル１００には磁界発生用電源１０
１が接続されている。A vacuum pump 14 is connected to the reaction vessel 1 via a first valve 15, whereby the gas in the reaction vessel 1 is sucked and discharged. On the other hand, the reaction vessel 1
To the Ar via the second valve 16 and the flow rate regulator 17.
A gas supply source 18 is connected, and thereby Ar is supplied into the reaction vessel 1 as a plasma generating gas. The pressure inside the reaction vessel 1 is measured by a vacuum gauge 19. further,
A coil 100 for generating a magnetic field is installed around the reaction container 1. The coil 100 has a power source 10 for generating a magnetic field.
1 is connected.
【００１３】この装置を用いて、例えばＺｎＯ薄膜を製
造する場合について説明する。真空ポンプ１４を駆動
し、第１のバルブ１５を開にして反応容器１内を排気
し、約１×１０-8Ｔｏｒｒの真空度にする。反応容器１
内にＡｒガス供給源１８から流量調整器１７及び第２の
バルブ１６を介してＡｒガスを導入し、反応容器１内の
圧力を約０．０１Ｔｏｒｒに設定する。A case where a ZnO thin film, for example, is manufactured using this apparatus will be described. The vacuum pump 14 is driven, the first valve 15 is opened, and the inside of the reaction vessel 1 is evacuated to a vacuum degree of about 1 × 10 −8 Torr. Reaction vessel 1
Ar gas is introduced from the Ar gas supply source 18 through the flow rate regulator 17 and the second valve 16 to set the pressure in the reaction vessel 1 to about 0.01 Torr.
【００１４】次に、陽極２及び陰極５に、第１、第２及
び第３のケーブル６、８、１０を介して高周波電源９よ
り電力を供給する。その電圧を徐々に増加していくと、
Ａｒガスがグロー放電プラズマとなり、多数のＡｒ+ イ
オンが発生する。Next, electric power is supplied to the anode 2 and the cathode 5 from the high frequency power source 9 via the first, second and third cables 6, 8, 10. When the voltage is gradually increased,
Ar gas becomes glow discharge plasma, and a large number of Ar + Ions are generated.
【００１５】一方、電源１０１からコイル１００に例え
ば周波数１０Ｈｚの交流電力を印加し、陽極２と陰極５
との間に発生する電界Ｅと直交する方向の磁界Ｂを発生
させる。なお、磁界の強さは最大１２０ガウス程度であ
る。On the other hand, AC power having a frequency of 10 Hz, for example, is applied from the power supply 101 to the coil 100, and the anode 2 and the cathode 5 are
A magnetic field B is generated in a direction orthogonal to the electric field E generated between and. The magnetic field strength is about 120 Gauss at maximum.
【００１６】陽極２と陰極５との間でグロー放電が発生
すると、図３に示すように、スパッタ現象が起こり、基
板３ａ、３ｂの表面にターゲット材と同じ材料の膜が形
成される。すなわち、図３において電界Ｅは陽極２の平
面に対してほぼ垂直方向であり、磁界Ｂはそれに直交す
る方向に発生しているので、両電極間に存在するＡｒ+
イオン及び電子などの荷電粒子にはＥＢドリフトが作用
する。したがって、Ａｒ+ イオンは図３中の実線、破線
及び一点鎖線で示すように動き、ターゲット４に衝突す
る。その結果、スパッタリング現象により、ターゲット
４は微小な粒子（スパッタ粒子）となって飛散する。ス
パッタ粒子の大部分は基板３ａ、３ｂに到達し、ターゲ
ットと同一の材料の膜が形成される。なお、磁界Ｂの強
さをゼロにすると、基板３ａ、３ｂ上での膜厚分布にむ
らが生じる。When glow discharge is generated between the anode 2 and the cathode 5, a sputtering phenomenon occurs as shown in FIG. 3, and a film of the same material as the target material is formed on the surfaces of the substrates 3a and 3b. That is, in FIG. 3, the electric field E is in a direction substantially perpendicular to the plane of the anode 2, and the magnetic field B is generated in a direction orthogonal thereto, so that Ar + existing between both electrodes is +.
EB drift acts on charged particles such as ions and electrons. Therefore, Ar + The ions move as shown by the solid line, the broken line, and the alternate long and short dash line in FIG. 3, and collide with the target 4. As a result, due to the sputtering phenomenon, the target 4 becomes fine particles (sputtered particles) and scatters. Most of the sputtered particles reach the substrates 3a and 3b, and a film made of the same material as the target is formed. When the strength of the magnetic field B is set to zero, the film thickness distribution on the substrates 3a and 3b becomes uneven.
【００１７】本発明の装置では、陰極５の断面形状が直
径５〜１０ｍｍの円形であり、対向する平板状の陽極２
に比べて曲率半径が著しく小さいため、電極間に発生す
る電界強度が局所的に大きくなる。また、磁界を印加し
ているためにプラズマが容易に発生する。その結果、従
来の装置に比べて表皮効果の影響が少ない。その結果、
スパッタ粒子の基板表面における堆積速度分布を一様に
平均化でき、大面積の成膜が可能になる。In the device of the present invention, the cathode 5 has a circular cross section with a diameter of 5 to 10 mm, and the flat plate-shaped anodes 2 facing each other.
Since the radius of curvature is remarkably smaller than that of, the electric field strength generated between the electrodes locally increases. In addition, plasma is easily generated because the magnetic field is applied. As a result, the effect of the skin effect is less than that of the conventional device. as a result,
The deposition rate distribution of sputtered particles on the substrate surface can be uniformly averaged, and a large-area film can be formed.
【００１８】なお、上記実施例では不活性のＡｒガスを
用いたが、不活性ガスにＯ2 、Ｈ2など反応ガスを添加
した場合、または反応ガスのみの場合でも、上記実施例
と同様に実施できることはいうまでもない。Although the inert Ar gas is used in the above-mentioned embodiment, it is the same as in the above-mentioned embodiment even when the reaction gas such as O 2 and H 2 is added to the inert gas or only the reaction gas is used. It goes without saying that it can be implemented.
【００１９】[0019]
【発明の効果】以上詳述したように本発明によれば、大
面積の成膜が可能となり、アモルファスシリコン太陽電
池、薄膜トランジスタ、光センサなど薄膜製造分野での
工業的価値は著しく大きい。As described in detail above, according to the present invention, it is possible to form a large-area film, and the industrial value in the field of thin film manufacturing such as amorphous silicon solar cells, thin film transistors, and optical sensors is extremely large.
【図１】本発明の一実施例のスパッタリング成膜装置を
示す断面図。FIG. 1 is a sectional view showing a sputtering film forming apparatus according to an embodiment of the present invention.
【図２】同装置の陽極、陰極及び基板の配置状態を示す
斜視図。FIG. 2 is a perspective view showing an arrangement state of an anode, a cathode and a substrate of the same device.
【図３】同装置の作用を示す説明図。FIG. 3 is an explanatory diagram showing an operation of the apparatus.
【図４】従来のスパッタリング成膜装置を示す断面図。FIG. 4 is a sectional view showing a conventional sputtering film forming apparatus.
１…反応容器、２…陽極、３ａ、３ｂ…基板、４…ター
ゲット、５…陰極、６…電力ケーブル、７…アース、９
…高周波電源、１１ａ、１１ｂ…絶縁物、１２…冷却水
供給制御装置、１３…冷却管、１４…真空ポンプ、１
５、１６…バルブ、１７…流量調整器、１８…アルゴン
ガス供給源、１００…コイル、１０１…磁界発生用電
源。DESCRIPTION OF SYMBOLS 1 ... Reaction container, 2 ... Anode, 3a, 3b ... Substrate, 4 ... Target, 5 ... Cathode, 6 ... Power cable, 7 ... Ground, 9
... high frequency power source, 11a, 11b ... insulator, 12 ... cooling water supply control device, 13 ... cooling pipe, 14 ... vacuum pump, 1
5, 16 ... Valve, 17 ... Flow controller, 18 ... Argon gas supply source, 100 ... Coil, 101 ... Magnetic field generating power source.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 浜本 員年 長崎県長崎市飽の浦町１番１号 三菱重工 業株式会社長崎造船所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor, Hamamoto, No. 1-1, Atsunoura-machi, Nagasaki-shi, Nagasaki Mitsubishi Heavy Industries, Ltd. Nagasaki Shipyard Co., Ltd.
Claims (2)
または反応ガスを導入し、排出する手段と、該反応容器
内に収納された放電用電極と、該放電用電極に電力を供
給する電源と、スパッタリング用ターゲット材とを有
し、反応容器内に設置された基板表面にスパッタリング
による薄膜を形成する成膜装置において、上記放電用電
極の陽極として複数の長尺平板電極を、陰極として複数
の長尺円筒形電極と交互に対向して設置し、かつスパッ
タリング用ターゲット材を上記長尺円筒形電極表面に固
着させるとともに、２枚の基板を、上記対向設置された
陽極及び陰極を挟むように設置したことを特徴とするス
パッタリング成膜装置。1. A reaction vessel, a means for introducing and discharging an inert gas or a reaction gas in the reaction vessel, a discharge electrode housed in the reaction vessel, and a power supply to the discharge electrode. In a film forming apparatus having a power source for sputtering and a sputtering target material, and forming a thin film by sputtering on the surface of a substrate installed in a reaction vessel, a plurality of long flat plate electrodes are used as the anodes of the discharge electrodes, and a cathode is used. As the plurality of long cylindrical electrodes alternately facing each other, and the sputtering target material is fixed to the surface of the long cylindrical electrode, and two substrates are provided so that the anode and the cathode are installed facing each other. A sputtering film forming apparatus, which is installed so as to sandwich it.
界とほぼ直交する向きの磁界を発生するコイルを有し、
そのコイルに交流電力を供給する電源を有することを特
徴とする請求項１記載のスパッタリング成膜装置。2. A coil which surrounds the reaction vessel and generates a magnetic field in a direction substantially orthogonal to the electric field working between the discharge electrodes,
The sputtering film forming apparatus according to claim 1, further comprising a power supply for supplying alternating current power to the coil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16484492A JPH062123A (en) | 1992-06-23 | 1992-06-23 | Film forming device by sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16484492A JPH062123A (en) | 1992-06-23 | 1992-06-23 | Film forming device by sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH062123A true JPH062123A (en) | 1994-01-11 |
Family
ID=15800998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16484492A Withdrawn JPH062123A (en) | 1992-06-23 | 1992-06-23 | Film forming device by sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH062123A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0701270A1 (en) * | 1994-09-06 | 1996-03-13 | The Boc Group, Inc. | Methods and apparatus for vacuum sputtering |
| EP2091067A1 (en) | 2008-02-14 | 2009-08-19 | Applied Materials, Inc. | Apparatus for treating a substrate |
| JP4392477B2 (en) * | 2000-08-18 | 2010-01-06 | 株式会社 東北テクノアーチ | Polycrystalline semiconductor member and method for producing the same |
| US8083911B2 (en) | 2008-02-14 | 2011-12-27 | Applied Materials, Inc. | Apparatus for treating a substrate |
-
1992
- 1992-06-23 JP JP16484492A patent/JPH062123A/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0701270A1 (en) * | 1994-09-06 | 1996-03-13 | The Boc Group, Inc. | Methods and apparatus for vacuum sputtering |
| US5645699A (en) * | 1994-09-06 | 1997-07-08 | The Boc Group, Inc. | Dual cylindrical target magnetron with multiple anodes |
| JP4392477B2 (en) * | 2000-08-18 | 2010-01-06 | 株式会社 東北テクノアーチ | Polycrystalline semiconductor member and method for producing the same |
| EP2091067A1 (en) | 2008-02-14 | 2009-08-19 | Applied Materials, Inc. | Apparatus for treating a substrate |
| US8083911B2 (en) | 2008-02-14 | 2011-12-27 | Applied Materials, Inc. | Apparatus for treating a substrate |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990831 |