JPH0621234Y2 - 半導体製造装置 - Google Patents
半導体製造装置Info
- Publication number
- JPH0621234Y2 JPH0621234Y2 JP401988U JP401988U JPH0621234Y2 JP H0621234 Y2 JPH0621234 Y2 JP H0621234Y2 JP 401988 U JP401988 U JP 401988U JP 401988 U JP401988 U JP 401988U JP H0621234 Y2 JPH0621234 Y2 JP H0621234Y2
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- substrate
- semiconductor manufacturing
- manufacturing apparatus
- exhaust port
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims description 32
- 239000012495 reaction gas Substances 0.000 claims description 27
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000007795 chemical reaction product Substances 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 16
- 239000010409 thin film Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000006552 photochemical reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP401988U JPH0621234Y2 (ja) | 1988-01-14 | 1988-01-14 | 半導体製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP401988U JPH0621234Y2 (ja) | 1988-01-14 | 1988-01-14 | 半導体製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01108925U JPH01108925U (enExample) | 1989-07-24 |
| JPH0621234Y2 true JPH0621234Y2 (ja) | 1994-06-01 |
Family
ID=31206160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP401988U Expired - Lifetime JPH0621234Y2 (ja) | 1988-01-14 | 1988-01-14 | 半導体製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0621234Y2 (enExample) |
-
1988
- 1988-01-14 JP JP401988U patent/JPH0621234Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01108925U (enExample) | 1989-07-24 |
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