JPH06202154A - Liquid crystal display device - Google Patents

Abstract

PURPOSE:To provide a liquid crystal display device with a high light-using efficiency and superior accuracy in the production. CONSTITUTION:A first substrate 100 provided with a matrix array substrate equipped with a semiconductor oxide layer with thickness <=5mum, a semiconductor active element arranged in a matrix shape on the semiconductor oxide layer, and a picture element electrode connected to the semiconductor active element electrically, and a microlens substrate adhered on the matrix array substrate via an adhesive layer, and a counter substrate 200 equipped with a counter electrode 203 at a position facing the picture element electrode of the matrix array substrate are made oppositely face each other by providing a narrow gap between the picture element electrode side of the first substrate 100 and the counter electrode side of the counter substrate 200, and a liquid crystal component 300 is held between them.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly to a projection type liquid crystal display device capable of improving light transmittance.

[0002]

2. Description of the Related Art In recent years, liquid crystal display devices have been widely used as display elements for televisions, graphic displays and the like by taking advantage of features such as thinness and low power consumption. Among them, a thin film transistor (hereinafter abbreviated as TFT) is used as a switching element which is one of semiconductor active elements, has a pixel electrode connected to the switching element, and further has a scanning line and a signal line. Active matrix type liquid crystal display device, the main part of which is composed of a matrix array substrate, a counter substrate formed with a counter electrode arranged facing the matrix array substrate, and a liquid crystal composition sandwiched between these substrates. Has excellent high-speed responsiveness,
Suitable for high definition, high image quality of display screen,
It is expected to realize larger size and color image. In particular, research and development of a projection type liquid crystal display device that achieves a large color screen of about 100 inches on the screen by using the active matrix type liquid crystal display device is under way.

Conventionally, such a projection type liquid crystal display device is
The light from the light source is separated into the three primary colors of red, blue, and green, and the light of each color is incident on the three liquid crystal display devices corresponding to each color, and the light that has been transmitted is combined again to form a projected image. The method to do is often used. At this time, when a twisted nematic (TN) liquid crystal is used as the liquid crystal material, the transmittance is reduced by the polarizing plate, and the projected image is dark due to the reduction of the aperture ratio accompanying the miniaturization of the pixel size due to the high definition. was there. On the other hand, the microlens method is disclosed in Japanese Patent Laid-Open No. 4-30140. FIG. 6 shows a cross-sectional view of a conventional liquid crystal display device using this microlens. The microlens substrate 101 arranged two-dimensionally is bonded to the transparent substrate 201 side, and the light that normally reaches the light shielding layer 402 as the counter substrate 200 is also transmitted through the opening portion by using the microlens to improve the light transmittance. Is being considered. In FIG. 6, 300 is a liquid crystal composition, 400 is a TFT substrate, 401 is a TFT and a bus line portion, 10
Reference numeral 9 represents a pixel electrode.

[0004]

However, the conventional projection type liquid crystal display device using the microlenses has the following problems. The light utilization efficiency of the microlens is greater as the substrate thickness is thinner. Therefore, it is conceivable to form the matrix wiring directly on the microlens substrate. However, if the microlens substrate is made of resin, it may be damaged during the formation of the matrix wiring, or if the microlens substrate is formed by the selective ion exchange method. Has a problem that lens deformation is likely to occur.

Although various methods for manufacturing microlenses have been proposed, the selective ion exchange method, which is the most accurate and mass-produced, is general. However, the selective ion exchange method of forming microlenses having a desired refractive index by diffusing and substituting desired ions on glass is that the glass contains various metal ions, and the Since it has a coefficient of thermal expansion of 200 times, there is a problem that when it is attached to the counter substrate side, a positional shift occurs between the counter substrate and the substrate on which the TFT is formed.

Further, in the optical system of the projection type liquid crystal display device, the light incident on the microlens is not a perfectly parallel light but ± 1.
Since the incident angle is about ± 5 °, the efficiency of light transmittance does not improve as expected. In particular, there is a problem that this tendency becomes stronger as the pixel size becomes smaller.

On the other hand, the active matrix type liquid crystal display device aiming at high speed response and high definition has the following problems. In order to correspond to the high definition of the display screen, T
Polycrystalline silicon is usually used for the active layer of FT instead of amorphous silicon. However, polycrystalline silicon requires a quartz substrate as a TFT substrate due to heat treatment and the like. For this reason, in a projection-type liquid crystal display device in which the temperature rise due to a high-brightness light source is as high as 30 to 40 ° C, unless a substrate having a coefficient of thermal expansion similar to that of a quartz substrate is used as the counter substrate, the upper and lower substrates are different due to the difference in thermal expansion coefficient. There is a problem that a positional shift occurs between them.

Further, when the number of scanning lines and signal lines increases remarkably as the number of pixels increases due to higher definition,
It is not easy to connect them to the drive circuit.
Since it is also necessary to improve the driving speed, the driving circuit is mounted on the matrix array substrate with TF.
A drive circuit integrated type liquid crystal display device formed as T is known. However, when a semiconductor material is used to form a TFT on a transparent insulating substrate such as glass or quartz, stress due to the difference in coefficient of thermal expansion between the two is concentrated in a high temperature process during the manufacturing process, resulting in electrode peeling failure or TFT. There is a problem that disconnection defects occur in wiring such as scanning lines.

Further, in order to improve the driving speed as described above, it is conceivable to form the TFT from a single crystal silicon substrate, but since such single crystal silicon is usually non-translucent, There is a problem that it is difficult to use for a light transmission type liquid crystal display device.

Conventionally, a light-shielding film called a black matrix has been provided on the counter substrate side. However, as the definition of the screen becomes finer and the pixels become finer, the dimensional accuracy and the alignment with the pixel region are adjusted. It is necessary to improve the accuracy of the above, and it is considered to provide the light shielding film on the matrix array substrate side in order to satisfy this. However, forming this light-shielding film in the lower layer of the TFT with a film made of a metal such as chromium (Cr) is not effective in mixing impurities such as so-called migration of a metal element into the active layer of the TFT or high temperature at the time of forming the TFT. There is a problem that it is practically impossible due to oxidation of the metal of the light shielding film due to the process.

The present invention has been made to solve such a problem. Even if the pixel size is miniaturized, the light utilization efficiency is high, so that a bright projected image can be obtained, and the accuracy of production can be improved. An object is to provide an excellent projection type liquid crystal display device integrated with a drive circuit.

[0012]

A liquid crystal display device according to the present invention comprises a light-transmissive semiconductor oxide layer, semiconductor active elements arranged in a matrix on the semiconductor oxide layer, and the semiconductor active element electrically connected to the semiconductor active element. A matrix array substrate having pixel electrodes connected to the matrix array substrate, and a microlens substrate bonded to the matrix array substrate via an adhesive layer.
The first substrate and a counter substrate having a counter electrode at a position facing the pixel electrode of the matrix array substrate are made to face each other with a narrow gap between the pixel electrode side of the first substrate and the counter electrode side of the counter substrate. The liquid crystal composition is sandwiched between them.

The semiconductor oxide layer according to the present invention is obtained by oxidizing a single crystal semiconductor layer. As the semiconductor single crystal that can be used in the present invention, a single element or compound single crystal can be used as long as the semiconductor oxide layer has a light-transmitting property. Examples of the single element include silicon (Si) and germanium (Ge), and examples of the compound include gallium arsenide (GaAs) and indium phosphide (InP). Among these, single crystal silicon, which is excellent in manufacturability, is particularly preferable for the liquid crystal display device of the present invention. The oxide layer is obtained by processing the single crystal semiconductor layer in an oxidizing atmosphere such as oxygen or water vapor. Since it is necessary to maintain the efficiency of light transmittance, the thickness of such an oxide layer is preferably 5 μm or less.

The semiconductor active element according to the present invention is
It is formed and arranged on the active layer formed on the above-mentioned oxide layer. For the active layer, single crystal, polycrystal, or amorphous semiconductor can be used. Among these, single crystal silicon, polycrystalline silicon, and amorphous silicon are preferable, and single crystal silicon is particularly preferable. The semiconductor active element means a switching transistor used for each pixel electrode, a drive circuit transistor for driving the pixel electrode, and the like.

The above-mentioned semiconductor active elements and pixel electrodes are arranged in a matrix on the semiconductor oxide layer to form a matrix array substrate. The pixel electrode may be on the same surface as the semiconductor active element or on the opposite surface as long as it is on the oxide layer.

The microlens substrate according to the present invention is a selective ion exchange method for forming microlenses having a desired refractive index by diffusing and substituting desired ions in glass, a method for molding glass, etc., photolithography. It can be manufactured by a method of forming a lens using a technique. Among these, the selective ion exchange method is preferable because it can obtain a microlens substrate having a uniform thickness and a thin thickness.

FIG. 5 shows the relationship between the divergence angle of incident light and the efficiency of light transmittance with the distance from the microlens to the liquid crystal composition as a parameter. Note that in FIG. 5, the pixel size is 6
3.5 μm square, aperture size in pixel is 40 μm square, wavelength is 55
Calculated at 0 nm. From FIG. 5, when the projection type liquid crystal display device has an incident light divergence angle of about ± 1 to ± 5 °, the distance from the microlens to the liquid crystal composition is
It can be seen that the light transmittance efficiency drops sharply at 1.1 mm. That is, in the conventional example as shown in FIG. 6, if the opposing substrate thickness is 1.1 mm, sufficient efficiency cannot be obtained. In addition, from this figure, considering the focal length of the microlens and the workability of bonding to the microlens substrate, etc., 0.1 mm
A transparent substrate having a thickness of ~ 0.7 mm may be interposed between the microlens substrate and the matrix array substrate.

The first substrate forming the liquid crystal display device of the present invention is formed by adhering the above-mentioned microlens substrate and matrix array substrate through an adhesive layer, and at this time, protects the semiconductor active element. It is preferable to dispose the light-shielding layer at the position. What is the position to protect the semiconductor active element?
It refers to a position between the microlens substrate and the matrix array substrate and / or above the semiconductor active element on the side of the counter substrate, where the semiconductor active element is directly irradiated by the light from the light source.

The liquid crystal display device of the present invention comprises a liquid crystal composition sandwiched between the first substrate and a counter substrate, and a light source for use as a projection type is arranged on the first substrate side. It is characterized by being As a result, it is possible to prevent the positional deviation from the counter substrate.

An example of the method of manufacturing the liquid crystal display device of the present invention will be described below. The surface of the single-crystal silicon substrate is oxidized to form a transparent semiconductor oxide layer of silicon oxide with a thickness of 5 μm or less, and the single-crystal silicon film is used as an active layer on this oxide layer for switching transistors and drive circuits. Transistors and the like are formed and arranged. In order to form a transparent semiconductor oxide layer, the film thickness may be about 5 μm or less, depending on the material.

Next, the single crystal silicon substrate under the oxide layer is removed by polishing or etching. The depth of polishing or etching of the single crystal silicon substrate may be such that the substrate is removed and the depth is reduced until the light transmittance thereof reaches a value suitable for display. For example, in a normal single crystal silicon substrate, polishing or etching is performed until the remaining thickness becomes about several hundred angstroms and the light transmittance becomes good. Further, when polishing or etching the semiconductor substrate, a temporary support substrate is temporarily provided on the first main surface side of the semiconductor substrate with an adhesive that is easily dissolved for reinforcement, and the semiconductor substrate is subjected to polishing or etching. After that, the adhesive may be dissolved and the temporary support substrate may be removed. Of course, the temporary support substrate can be omitted by fixing the semiconductor substrate to a polishing device or the like.

The first substrate may be formed by adhering a sheet-shaped substrate obtained by removing the above single crystal silicon substrate and a microlens substrate on which microlenses are formed in advance through an adhesive layer. A transparent substrate having a thickness of 0.1 mm to 0.7 mm, which is previously bonded, may be bonded via an adhesive layer. The adhesive layer is translucent and is formed of an adhesive having excellent heat resistance. An epoxy adhesive is mentioned as a preferable adhesive. When adhering, a light shielding layer is provided between the TFT and the microlens substrate. A metal such as chromium (Cr) can be used for the light shielding layer. Then, a counter substrate is arranged to manufacture a liquid crystal display device. At this time, the counter substrate is made of the same material as the microlens substrate or a material having a thermal expansion coefficient similar to that of the microlens substrate. For example, when using a glass microlens substrate,
The counter substrate is also a glass substrate.

[0023]

[Function] The first substrate can be thinned by adhering the matrix array substrate including the semiconductor active elements formed in a matrix on the light-transmissive semiconductor oxide layer and the microlens substrate through the adhesive layer. Therefore, the light efficiency can be improved. Further, since the light-shielding layer is provided between the microlens substrate and the semiconductor oxide layer, the light-shielding layer can be easily aligned, and further, the misalignment due to temperature rise can be prevented. Therefore, even if the aperture ratio is the same, 1.5 to 2.0
The light efficiency can be doubled. Furthermore, since the light-shielding film can be formed without being bothered by oxidation or migration of the metal element due to a high temperature process when forming the TFT,
It is possible to prevent light leakage current of the TFT.

Further, since the TFT is formed directly on the semiconductor substrate in the matrix array substrate, it is possible to avoid the destruction of the TFT and the occurrence of disconnection defects such as scanning lines due to the difference in thermal expansion coefficient.

Further, when the liquid crystal display device is used as a projection type, for example, by forming a dichroic filter layer on the semiconductor oxide layer substrate, the overall size of the optical system can be reduced, the component mounting process can be simplified, and the liquid crystal can be The efficiency of air cooling of the display device can be improved.

[0026]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The liquid crystal display device of the present invention will be described in detail below with reference to the drawings. Example 1 FIG. 1 is a schematic sectional view showing the structure of a liquid crystal display device of the present invention. 2 and 3 are views showing the manufacturing process of the first substrate 100.

The manufacturing process of the first substrate 100 of the liquid crystal display device according to the first embodiment will be described with reference to FIGS. First, as shown in FIG. 2A, the single crystal silicon substrate 11
An oxide film 107 having a thickness of about 1 μm is formed by thermal oxidation of the first main surface of (1), and a single crystal silicon film 13 is laminated on the transparent oxide film 107.

In addition to this single crystal silicon substrate 11, as a material for the semiconductor substrate, an SOI using a silicon substrate as a seed is used.
A substrate, a substrate formed by a zone melting method or a SIMOX method, a substrate obtained by laminating and polishing a silicon substrate, or the like can also be used.

Next, as shown in FIG. 2B, the LOCOS oxide film 125 is formed by oxidizing the single crystal silicon film 13 by a LOCOS method over a thickness of 2000 angstroms while avoiding a portion where a semiconductor active element is formed. , This L
The active layer 12 of each TFT is formed by the OCOS oxide film 125.
The single crystal silicon film 13 to be 3 is isolated for each device.

Then, as shown in FIG. 2C, the single crystal silicon film 13 in the element-isolated portion is used as an active layer 123 in a later step, and is also used as a dielectric of an auxiliary capacitance on the active layer 123. Of the gate insulating film 137 is formed. The gate insulating film 137 is formed by thermally oxidizing the surface of the single crystal silicon film 13 described above. After that, phosphorus (P) of about 5 × 10 ⁻¹³ / cm ² is ion-implanted as an impurity into the portion of the auxiliary capacitor which will be the lower electrode, to lower the resistance. At this time, if the impurity concentration is too high, the thermal oxidation rate rapidly increases and the thickness of the gate insulating film 137 varies, so it is desirable to suppress the ion implantation to about the above dose amount or less.

Next, the scanning line and the gate electrode 115 formed integrally with the scanning line are formed from a low-resistance polycrystalline silicon film to which impurities are added. Then, using the gate electrode 115 as a self-alignment mask, ions are implanted into the portion of the single crystal silicon film 13 where the active layer 123 is to be formed, and the channel region 135, the source region 127, and the drain region 1 are formed.
The TFT 31 is formed by forming 31 as the active layer 123.
In the first embodiment, the scanning line and the gate electrode 115 formed integrally with the scanning line are formed of an impurity-doped polycrystalline silicon film, but in addition to this, impurity-doped polycrystalline silicon and WSi _x or MoSi _x are used. 2 with silicide
It may have a layered structure or may be formed of a metal such as tungsten (W) or molybdenum (Mo).

Next, as shown in FIG. 2D, after the upper electrode 139 of the auxiliary capacitor is formed on the gate insulating film 137 by the impurity-added low-resistance polycrystalline silicon film, the first interlayer is formed. An insulating film 129 is formed. Then, a contact hole is formed in the first interlayer insulating film 129 and the gate insulating film 137, and a signal line 117 made of aluminum (Al) connected to the source region 127 through the contact hole and a drain region 131 are connected through the contact hole. A drain electrode 133 made of aluminum (Al) for making a connection with the pixel electrode 109 is formed.

Then, as shown in FIG. 2 (e), a second interlayer insulating film 141 is formed, and a first chromium (Cr) layer is formed on the second interlayer insulating film 141 for shielding the TFT and separating adjacent pixel regions. The light shielding film 111 is formed. Subsequently, a third interlayer insulating film 143 is formed, a pixel electrode 109 made of ITO connected to the drain electrode 133 is formed, and a temporary supporting substrate 17 is temporarily attached onto the pixel electrode 109 via an adhesive 15. . It is desirable that the adhesive 15 used at this time be one that can be easily dissolved and removed with a solution after the process is completed.

Then, the supporting temporary substrate 17 is supported, and the single crystal silicon substrate 11 is removed by polishing or etching from the second main surface. At this time, only the single crystal silicon portion of the single crystal silicon substrate 11 having a low light-transmitting property is deleted,
The oxide film 107 and the active layer 123 formed on the first main surface side of the single crystal silicon substrate 11 are not removed. Therefore, for example, when removing by etching, so-called etching, the etchant and etching time are adjusted so that only the single crystal silicon portion of the single crystal silicon substrate 11 is selectively etched and the oxide film 107 and the like are not etched. To do. Alternatively, the single crystal silicon portion of the single crystal silicon substrate 11 is not necessarily required to be removed over the entire thickness. The removal of the single crystal silicon portion is started from the second main surface side of the single crystal silicon substrate 11, and the removal is stopped shortly before reaching the oxide film 107 on the first main surface, and the single crystal silicon portion is changed to several tens to several. 100
It may be left to a thickness of about angstrom. This is because such a thin single crystal silicon film effectively has sufficient light transmissivity as a pixel of a transmissive liquid crystal display device. In this way, if a slight margin is given to the depth of polishing or etching, it is possible to avoid the disadvantage that the oxide film 107 and the like are excessively removed.

After removing the single crystal silicon substrate 11 as described above, the exposed oxide film 1 is formed as shown in FIG.
07 to the second light-shielding film 103 via the adhesive layer 105.
The microlens substrate 101 formed by adhering the transparent substrate 102 on which is formed is attached.

Then, as shown in FIG. 3G, the adhesive 15 and the supporting temporary substrate 17 are removed. Then, the alignment film 145 is formed on the first main surface thereof to form the first substrate 100.
Got

Next, as shown in FIG. 1, a transparent substrate 20
The counter electrode 203 is formed on the counter electrode 203, and the alignment film 205 is formed on the counter electrode 203 to obtain the counter substrate 200.

The matrix array substrate 100 and the counter substrate 200 are respectively provided with an alignment film 145 and an alignment film 2.
05 are opposed to each other and the periphery is sealed with a sealing material to form an empty cell, and the liquid crystal composition 300 is placed in the empty cell.
Was injected and sandwiched as a liquid crystal layer to obtain a liquid crystal display device shown in FIG. In the above description, the TFT of the drive circuit
The description of the formation process of the above is omitted because it is almost the same as the formation process of the switching TFT.

According to the manufacturing method as described above, the drive circuit and the switching TFT are formed on the single crystal silicon film 13 having good conductivity, and then the single crystal silicon substrate 11 having low light transmissivity is removed. Therefore, it is possible to avoid electrostatic breakdown of the TFT due to static electricity during manufacturing.

On a transparent insulating substrate having a small coefficient of thermal expansion such as quartz, a semiconductor material having a relatively high coefficient of thermal expansion T
In the conventional manufacturing method for forming FT, various wirings, etc., stress is concentrated between the transparent insulating substrate and the semiconductor material having a significantly different coefficient of thermal expansion during the manufacturing process, resulting in destruction of TFTs, peeling of electrodes, disconnection of wiring, etc. What had a manufacturing defect,
According to the manufacturing method of the present invention, the substrate used for manufacturing is TF.
Since it is the single crystal silicon substrate 11 itself that forms T, the difference in thermal expansion coefficient is small, stress concentration due to thermal expansion can be eliminated, and manufacturing defects such as TFT breakage, electrode separation, and wiring breakage can be avoided. be able to. In addition to the effect of preventing electrostatic breakdown, a high manufacturing yield can be realized. In particular, it is effective to reduce the resistance of wiring such as scanning lines by using polycrystalline silicon and metal silicide.
When using a two-layer structure, the thermal expansion coefficient of metal silicides such as WSi _x and MoSi _x is about an order of magnitude higher than that of tungsten (W) and molybdenum (Mo). The conventional manufacturing method of forming the wiring has a problem that the wiring is likely to be broken, but the manufacturing method of the first embodiment can solve the problem.

According to the present invention, the oxide film 1 exposed after the single crystal silicon substrate 11 having a low light transmittance is removed.
The microlens substrate 101 is adhered to the second main surface side of 07, but since the second light shielding film 103 is formed on the transparent substrate 102 of the microlens substrate 101 separately from the TFT, the TFT is formed. The second light-shielding film 103 can be arranged immediately below the TFT without being bothered by oxidation of the light-shielding film or migration of the metal element thereof due to a high temperature process. Therefore, it is possible to solve the problem of the light leakage current of the TFT, and solve the problem of the low aperture ratio of the pixel portion due to the difficulty of aligning the light shielding film with the miniaturization of the pixel and the like. The rate can be improved.

As described above, the liquid crystal display device of this embodiment is
Since it is a light-transmissive type and the TFT has an active layer formed of single crystal silicon, it can operate at high speed and
Since the 1st light-shielding film 111 and the 2nd light-shielding film 103 can be installed, the light leak current can be sufficiently eliminated and the miniaturization of pixels can be dealt with. It is particularly suitable for

Second Embodiment Next, a second embodiment according to the present invention will be described with reference to FIG. In the following description, differences from the first embodiment will be mainly described. The same parts as those in the first embodiment are designated by the same reference numerals.

FIG. 4 is a diagram showing the manufacturing process of the second embodiment. Until the formation of the first light-shielding film 111 shown in FIG. 4E, the manufacturing method is the same as that of the first embodiment except the formation of the drain electrode 133 and the interlayer insulating film 143.
Then, as shown in FIG. 4 (f), the microlens substrate 101 is bonded via the adhesive 15 to polish or etch the single crystal silicon substrate 11 from the second main surface in the same manner as in Example 1. Delete it.

After removing the single crystal silicon substrate 11 in this manner, the second light-shielding film 103 is formed on the exposed oxide film 107 and the interlayer insulating film 143 is formed thereon. Then, a contact hole is formed in the interlayer insulating film 143 and the oxide film 107, and a pixel electrode 109 connected through the contact hole is formed. Then, the liquid crystal display device shown in FIG. 1 was obtained in the same manner as in Example 1.

[0046]

According to the liquid crystal display device of the present invention, since the light-shielding layer is disposed and adhered and fixed between the microlens substrate and the matrix array substrate, the positional deviation due to the temperature rise does not occur. Further, since the distance from the microlens to the liquid crystal composition can be formed small, the efficiency of light transmittance is improved even if the incident light is not perfectly parallel light. Furthermore, since single crystal silicon can be used as the active layer of the semiconductor active element, the driving speed of the TFT is improved. Therefore, it is possible to obtain a high-definition projection-type liquid crystal display device that is excellent in high-speed response and can obtain a bright projected image even if the pixel size is miniaturized.

[Brief description of drawings]

FIG. 1 is a diagram showing a schematic sectional structure of a liquid crystal display device of the present invention.

FIG. 2 is a diagram showing a manufacturing process of the matrix array substrate of Example 1.

FIG. 3 is a diagram showing a manufacturing process (continuation) of the matrix array substrate of Example 1.

FIG. 4 is a diagram showing a manufacturing process of a matrix array substrate of Example 2;

FIG. 5 is a diagram showing the relationship between the spread angle of incident light and the efficiency of light transmittance.

FIG. 6 is a diagram showing a schematic cross-sectional structure of a conventional liquid crystal display device using microlenses.

[Explanation of symbols]

11 ... Single crystal silicon substrate, 13 ... Single crystal silicon film,
15 ... Adhesive agent, 17 ... Temporary substrate for support, 100 ... First substrate, 101 ... Microlens substrate, 103 ... Second light-shielding film, 105 ... Adhesive layer, 107 ... Oxide film, 109 ... Pixel electrode, 111 ... First light shielding film, 115 ... Gate electrode, 1
Reference numeral 17 ... Signal line, 123 ... Active layer, 125 ... LOCOS oxide film, 127 ... Source region, 129 ... First interlayer insulating film, 131 ... Drain region, 133 ... Drain electrode, 1
35 ... Channel region, 137 ... Gate insulating film, 139 ...
Upper electrode of storage capacitor, 141 ... Second interlayer insulating film, 14
3 ... Third interlayer insulating film, 145 ... Alignment film, 200 ... Counter substrate, 201 ... Transparent substrate, 203 ... Counter electrode, 205 ...
Alignment film, 300 ... Liquid crystal composition, 400 ... TFT substrate, 4
01 ... TFT and bus line part, 402 ... Light-shielding layer.

Claims (5)

[Claims] 1. A matrix array comprising a light-transmissive semiconductor oxide layer, semiconductor active elements arranged in a matrix on the semiconductor oxide layer, and pixel electrodes electrically connected to the semiconductor active element. A first substrate having a substrate and a microlens substrate adhered to the matrix array substrate via an adhesive layer; an opposite substrate having an opposite electrode at a position facing the pixel electrode of the matrix array substrate; A liquid crystal display device comprising a liquid crystal composition sandwiched between the pixel electrode side of the first substrate and the counter electrode side of the counter substrate with a narrow gap therebetween. 2. The liquid crystal display device according to claim 1,
A liquid crystal display device, wherein a light source is arranged on the side of the first substrate. 3. The liquid crystal display device according to claim 1,
A liquid crystal display device, wherein a light-shielding layer is arranged between the microlens substrate and the matrix array substrate at a position for protecting the semiconductor active element. 4. The liquid crystal display device according to claim 1,
A liquid crystal display device, wherein a light-shielding layer is arranged at a position above the counter substrate side of the semiconductor active element and at a position to protect the semiconductor active element. 5. The liquid crystal display device according to claim 1, wherein
A liquid crystal display device, wherein a translucent substrate having a thickness of 0.1 to 0.7 mm is interposed between the microlens substrate and the matrix array substrate.