JPH06196408A - Vertical lpcvd device and thin film glowth method - Google Patents
Vertical lpcvd device and thin film glowth methodInfo
- Publication number
- JPH06196408A JPH06196408A JP34412592A JP34412592A JPH06196408A JP H06196408 A JPH06196408 A JP H06196408A JP 34412592 A JP34412592 A JP 34412592A JP 34412592 A JP34412592 A JP 34412592A JP H06196408 A JPH06196408 A JP H06196408A
- Authority
- JP
- Japan
- Prior art keywords
- hatch
- boat
- growth chamber
- wafers
- purging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】半導体製造工程において、配線や
絶縁膜の形成等に広く用いられている縦型LPCVD装
置の構造に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a vertical LPCVD apparatus which is widely used for forming wirings and insulating films in a semiconductor manufacturing process.
【0002】[0002]
【従来の技術】従来の縦型LPCVD装置の構造を図2
に示す。2. Description of the Related Art The structure of a conventional vertical LPCVD apparatus is shown in FIG.
Shown in.
【0003】成長室は外管1と内管2、ハッチ5により
構成される。外管1とハッチ5により気密を保ち、真空
ポンプ(図示せず)により排気口4から排気し、真空状
態をつくる。また、ハッチ5の上にはウェーハ搭載用の
ボート3が配置され、ウェーハのロードおよびアンロー
ド時には下方に、他の時には上方にと垂直方向にゆっく
りと動く。The growth chamber is composed of an outer tube 1, an inner tube 2 and a hatch 5. Airtightness is maintained by the outer tube 1 and the hatch 5, and a vacuum pump (not shown) exhausts air from the exhaust port 4 to create a vacuum state. Further, a boat 3 for loading wafers is arranged on the hatch 5 and moves slowly vertically in the downward direction when loading and unloading the wafer and upwards in other times.
【0004】[0004]
【発明が解決しようとする課題】縦型LPCVD装置に
おいて成膜処理後の残留ガスを除くため、成長室内の真
空引きおよびN2 パージを繰り返す。この真空引き、N
2 パージを十分におこなうことがパーティクル発生の防
止につながる。このため、ウェーハが成長室内にある状
態で、真空引き、パージをおこなったのち、ウェーハを
成長室より取り出してからさらにもう一度真空引き、パ
ージをおこなっている。In the vertical LPCVD apparatus, in order to remove the residual gas after the film forming process, evacuation of the growth chamber and N 2 purge are repeated. This evacuation, N
2 Sufficient purging will prevent the generation of particles. Therefore, after the wafer is in the growth chamber, vacuuming and purging are performed, and then the wafer is taken out of the growth chamber and then vacuuming and purging are performed again.
【0005】しかし、従来の縦型LPCVD装置は、真
空を保つためのハッチ上にウェーハの搭載されているボ
ートが配置されているため、ウェーハを成長室から取り
出してからもう一度成長室を真空引きするには、ボート
下降、ウェーハ冷却、ウェーハ回収、ハッチ上昇、成長
室内真空引き、パージ、ハッチ下降、次ロットのウェー
ハ搭載というステップとなり多くの時間を必要とする。However, in the conventional vertical LPCVD apparatus, since the boat on which the wafer is mounted is arranged on the hatch for maintaining the vacuum, the wafer is taken out of the growth chamber and then the growth chamber is evacuated again. This requires a lot of time in the steps of descending the boat, cooling the wafer, recovering the wafer, raising the hatch, vacuuming the growth chamber, purging, lowering the hatch, and loading the next lot of wafers.
【0006】[0006]
【課題を解決するための手段】この発明の縦型LPCV
D装置は、ウェーハ搭載用ボートの設置されているハッ
チとは別に第2のハッチを有しており、この第2のハッ
チによっても成長室内を真空密封することができる。A vertical LPCV according to the present invention
The device D has a second hatch separately from the hatch in which the wafer loading boat is installed, and the growth chamber can also be vacuum-sealed by this second hatch.
【0007】[0007]
【作用】上記のように、第2のハッチを有していれば、
成長処理完了後、ボートの配置されたハッチが完全に下
降した時点で、第2のハッチにより、成長室の気密を保
つことができ、すぐに真空引き、N2 パージをおこなう
ことができる。As described above, if the second hatch is provided,
After the growth process is completed, when the hatch in which the boat is arranged is completely lowered, the growth chamber can be kept airtight by the second hatch, and vacuuming and N 2 purging can be performed immediately.
【0008】[0008]
【実施例】以下、この発明について、図面を参照して説
明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings.
【0009】図1は、この発明の一実施例の縦型LPC
VD装置の断面図である。図において、1は、外管,2
は内管,3はウェーハ搭載用のボート,4は排気口,5
はボート昇降および成長中の真空密封用のハッチ,6は
第2のハッチである。FIG. 1 is a vertical LPC according to an embodiment of the present invention.
It is sectional drawing of a VD apparatus. In the figure, 1 is an outer tube, 2
Is an inner pipe, 3 is a wafer loading boat, 4 is an exhaust port, 5
Is a hatch for raising and lowering the boat and for vacuum sealing during growth, and 6 is a second hatch.
【0010】次に上記の縦型LPCVD装置の動作につ
いて説明する。Next, the operation of the above vertical LPCVD apparatus will be described.
【0011】この実施例によれば、成長が完了し、ハッ
チ5が下降し、ボート3およびウェーハが成長室外に出
ると、ただちに第2のハッチ6により成長室の気密を保
ち、成長室内の真空引き、パージを行う。この間に、ウ
ェーハの冷却,ボートからのウェーハの回収,次ロット
のウェーハのボートへの搭載をおこなう。According to this embodiment, when the growth is completed, the hatch 5 descends, and the boat 3 and the wafer come out of the growth chamber, the second hatch 6 immediately keeps the growth chamber airtight, and the vacuum in the growth chamber is maintained. Pull and purge. During this time, the wafers are cooled, the wafers are collected from the boat, and the next lot of wafers is loaded into the boat.
【0012】この実施例によれば、成長室からウェーハ
を取り出した後の成長室の真空引き、パージとウェーハ
のボートからの回収、および次ロットのウェーハのボー
トへの搭載が同時におこなえるという利点がある。According to this embodiment, there is an advantage that the growth chamber can be evacuated after taking out the wafer from the growth chamber, purge and recovery of the wafer from the boat, and mounting of the next lot of wafers on the boat can be performed at the same time. is there.
【0013】[0013]
【発明の効果】以上、説明したように、この発明は、第
2のハッチを有したことにより、成長室からウェーハを
取り出した後の成長室内の真空引き、パージとウェーハ
の回収、搭載が同時におこなえるため、前ロットの処理
完了から次ロットの処理開始までの時間が短縮できると
いう効果がある。As described above, according to the present invention, since the second hatch is provided, the evacuation of the growth chamber after the wafer is taken out from the growth chamber, the purging and the recovery and mounting of the wafer are performed simultaneously. Therefore, there is an effect that the time from the completion of the processing of the previous lot to the start of the processing of the next lot can be shortened.
【図1】 この発明の縦型LPCVD装置の成長室構成
部分の縦断面図であるFIG. 1 is a vertical sectional view of a growth chamber constituting portion of a vertical LPCVD apparatus of the present invention.
【図2】 従来の縦型LPCVD装置の成長室構成部分
の縦断面図であるFIG. 2 is a vertical cross-sectional view of a growth chamber constituting portion of a conventional vertical LPCVD apparatus.
1 外管 2 内管 3 ボート 4 排気口 5 ハッチ 6 第2ハッチ 1 outer pipe 2 inner pipe 3 boat 4 exhaust port 5 hatch 6 second hatch
Claims (2)
載用のボートがセットされているハッチとは別に成長室
内を真空密封するための第2のハッチを有することを特
徴とする縦型LPCVD装置。1. A vertical LPCVD apparatus having a second hatch for vacuum-sealing a growth chamber in addition to a hatch on which a boat for mounting a wafer is set.
ッチが完全に下降した時点で第2のハッチにより成長室
の気密を保ち、真空引きN2 パージを行うことを特徴と
する薄膜成長方法。2. A method of growing a thin film, characterized in that after the completion of the thin film growth process, when the hatch on which the boat is installed is completely lowered, the second hatch keeps the growth chamber airtight and vacuum N 2 purge is performed. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34412592A JPH06196408A (en) | 1992-12-24 | 1992-12-24 | Vertical lpcvd device and thin film glowth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34412592A JPH06196408A (en) | 1992-12-24 | 1992-12-24 | Vertical lpcvd device and thin film glowth method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06196408A true JPH06196408A (en) | 1994-07-15 |
Family
ID=18366835
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP34412592A Pending JPH06196408A (en) | 1992-12-24 | 1992-12-24 | Vertical lpcvd device and thin film glowth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06196408A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012074737A (en) * | 2004-03-29 | 2012-04-12 | Hitachi Kokusai Electric Inc | Method for manufacturing semiconductor device and for processing substrate, and substrate processing apparatus |
-
1992
- 1992-12-24 JP JP34412592A patent/JPH06196408A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012074737A (en) * | 2004-03-29 | 2012-04-12 | Hitachi Kokusai Electric Inc | Method for manufacturing semiconductor device and for processing substrate, and substrate processing apparatus |
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