JP3058655B2 - Wafer diffusion processing method and wafer heat treatment method - Google Patents
Wafer diffusion processing method and wafer heat treatment methodInfo
- Publication number
- JP3058655B2 JP3058655B2 JP2157311A JP15731190A JP3058655B2 JP 3058655 B2 JP3058655 B2 JP 3058655B2 JP 2157311 A JP2157311 A JP 2157311A JP 15731190 A JP15731190 A JP 15731190A JP 3058655 B2 JP3058655 B2 JP 3058655B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- reaction furnace
- air valve
- lock chamber
- load lock
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、半導体製造工程の一つである拡散に於ける
ウェーハ拡散処理方法及びウェーハ熱処理方法に関する
ものである。Description: TECHNICAL FIELD The present invention relates to a wafer diffusion processing method and a wafer heat treatment method in diffusion, which is one of semiconductor manufacturing processes.
［従来の技術］ 半導体素子の材料であるウェーハから半導体を製造す
る工程の一つにウェーハの表面に純度の高い酸化膜を生
成する拡散工程がある。[Prior Art] One of the processes for manufacturing a semiconductor from a wafer, which is a material of a semiconductor element, is a diffusion process for forming a highly pure oxide film on the surface of the wafer.
従来の縦型拡散装置について、第２図により略述す
る。A conventional vertical diffusion device will be briefly described with reference to FIG.
図中１は反応炉であり、該反応炉１の内部には図示し
ないヒータが設けられ、反応炉内部に高温の均熱域を形
成する様になっている。又、該反応炉１の上部にはガス
供給管３が連通し、反応炉１の下部にはガス排気口４が
設けられている。In the drawing, reference numeral 1 denotes a reaction furnace, and a heater (not shown) is provided inside the reaction furnace 1 so as to form a high-temperature soaking region inside the reaction furnace. A gas supply pipe 3 communicates with the upper part of the reaction furnace 1, and a gas exhaust port 4 is provided at a lower part of the reaction furnace 1.
前記反応炉１には、下方よりウェーハが装入される様
になっている。該ウェーハは、反応炉１の下面を閉塞す
る蓋５に受台６を介して設けられたボート７に水平姿勢
で多段に装填される様になっている。A wafer is loaded into the reactor 1 from below. The wafers are loaded in multiple stages in a horizontal posture on a boat 7 provided on a lid 5 closing a lower surface of the reaction furnace 1 via a receiving table 6.
ウェーハへの酸化膜生成は、窒素ガス（N2）の常圧雰
囲気で純粋な酸素（O2）を供給して行われるが、大気と
窒素ガスの置換は以下の如く行われていた。The formation of an oxide film on a wafer is performed by supplying pure oxygen (O 2 ) in an atmosphere of nitrogen gas (N 2 ) at normal pressure, and the atmosphere is replaced with nitrogen gas as follows.
前記ガス供給管３より窒素ガス８を供給し、前記反応
炉１上部より窒素ガス８によって反応炉１内の大気を下
方のガス排気口４より押出す様にして置換していた。A nitrogen gas 8 was supplied from the gas supply pipe 3, and the atmosphere in the reaction furnace 1 was replaced with the nitrogen gas 8 from the upper part of the reaction furnace 1 so as to be pushed out from a lower gas exhaust port 4.
［発明が解決しようとする課題］ 然し乍ら、上記した従来の窒素ガスによる大気押出し
による置換では、完全な置換が難しく、反応炉内に大気
が残置することは避けられなかった。[Problems to be Solved by the Invention] However, in the above-described replacement by air extrusion using nitrogen gas, complete replacement is difficult, and it is inevitable that the atmosphere remains in the reactor.
大気中には酸素の他にイオウ等、或は各種金属原子が
混在しており、大気が残置した状態でウェーハの拡散処
理を行った場合、不純物を含有する酸化膜が生成され、
純度の高い酸化膜の生成が阻害され製品品質を低下させ
るという問題があった。In the atmosphere, other than oxygen, sulfur and the like, or various metal atoms are mixed, and when the wafer is subjected to the diffusion treatment in a state where the air is left, an oxide film containing impurities is generated,
There is a problem that the formation of a high-purity oxide film is hindered and product quality is reduced.
本発明は、斯かる実情に鑑み反応管内部の大気を完全
に窒素ガスに置換し得る様にしようとするものである。The present invention has been made in view of the above circumstances and aims to completely replace the atmosphere inside the reaction tube with nitrogen gas.
［課題を解決する為の手段］ 本発明は、常圧窒素ガス雰囲気でウェーハに熱処理を
行うウェーハ拡散処理方法に於いて、一旦反応炉を真空
引きした後、次に窒素ガスを常圧に充満させ、然る後、
反応ガスを流入させることを特徴とするウェーハ拡散処
理方法に係り、又該ウェーハ拡散処理方法に於いて前記
反応炉に連接するロードロック室を更に備え、反応炉と
ロードロック室とを個別に真空引きするウェーハ拡散処
理方法に係り、更に又反応炉と、反応炉に連接するロー
ドロック室とを有する装置にてウェーハに熱処理を行う
ウェーハ熱処理方法に於いて、前記反応室とロードロッ
ク室とを真空引きした後、ロードロック室より反応炉に
ウェーハを装入し、然る後、更に反応炉のみを真空引き
したことを特徴とするウェーハ熱処理方法に係るもので
ある。[Means for Solving the Problems] The present invention relates to a wafer diffusion treatment method in which a wafer is heat-treated in a nitrogen gas atmosphere at normal pressure, wherein the reactor is once evacuated and then filled with nitrogen gas at normal pressure. Let it go,
The present invention relates to a wafer diffusion processing method characterized by flowing a reaction gas, further comprising a load lock chamber connected to the reaction furnace in the wafer diffusion processing method, wherein the reaction furnace and the load lock chamber are individually evacuated. The present invention relates to a wafer diffusion treatment method for drawing, further comprising: a reaction furnace, and a wafer heat treatment method for performing heat treatment on a wafer by an apparatus having a load lock chamber connected to the reaction furnace. The present invention relates to a wafer heat treatment method, wherein a wafer is charged into a reaction furnace from a load lock chamber after evacuation, and then only the reaction furnace is further evacuated.
［作用］ 反応炉を真空引し、内部の大気を排除し、次に窒素ガ
スを常圧迄充満させる。このことで、常圧窒素ガス雰囲
気中に大気が混在することがなく、ウェーハには所望の
純粋な膜を生成することができる。[Operation] The reactor is evacuated to eliminate the internal atmosphere, and then filled with nitrogen gas to normal pressure. Thus, the desired pure film can be formed on the wafer without the presence of the air in the normal pressure nitrogen gas atmosphere.
［実 施 例］ 以下、図面を参照しつつ本発明の一実施例を説明す
る。[Embodiment] An embodiment of the present invention will be described below with reference to the drawings.
第１図中、第２図中で示したものと同一のものには同
符号を付してある。In FIG. 1, the same components as those shown in FIG. 2 are denoted by the same reference numerals.
反応炉１はロードロック室９の上部に気密に連設さ
れ、反応炉１とロードロック室９との間にはゲートバル
ブ10が設けられている。The reactor 1 is airtightly connected to the upper part of the load lock chamber 9, and a gate valve 10 is provided between the reactor 1 and the load lock chamber 9.
ガス供給管３は第１エアバルブ11を介して窒素ガス供
給源（図示せず）に接続され、更に純粋な酸素供給源に
も接続されている。該酸素供給源には流量調整器、濃度
調整器を有し、供給する酸素の量、或は濃度を調整し得
る様になっている。The gas supply pipe 3 is connected through a first air valve 11 to a nitrogen gas supply source (not shown), and further to a pure oxygen supply source. The oxygen supply source has a flow regulator and a concentration regulator so that the amount or concentration of oxygen to be supplied can be regulated.
ガス排気口４は、第２エアバルブ12を介して大気と連
通していると共に第３エアバルブ13を介して吸気管20に
接続している。該吸気管20はは途中が分岐管21,22に分
岐しており、該分岐管21,22を経てメカニカルブースタ
ポンプ23に接続し、該メカニカルブースタポンプ23は更
に真空ポンプ24に接続している。The gas exhaust port 4 communicates with the atmosphere via a second air valve 12 and is connected to an intake pipe 20 via a third air valve 13. The intake pipe 20 is branched in the middle into branch pipes 21 and 22, and is connected to a mechanical booster pump 23 via the branch pipes 21 and 22, and the mechanical booster pump 23 is further connected to a vacuum pump 24. .
前記一方の分岐管21には、第４エアバルブ14を設け、
他方の分岐管22には第３エアバルブ13側より第５エアバ
ルブ15、ターボ分子ポンプ25、第６エアバルブ16が設け
てある。The one branch pipe 21 is provided with a fourth air valve 14,
The other branch pipe 22 is provided with a fifth air valve 15, a turbo molecular pump 25, and a sixth air valve 16 from the third air valve 13 side.
前記ロードロック室９の内部と吸気管20とは排気管26
で接続し、該排気管26の途中に容量を漸次大きくした第
７エアバルブ17、第８エアバルブ18、第９エアバルブ19
を並列に設ける。The interior of the load lock chamber 9 and the intake pipe 20 are connected to an exhaust pipe 26.
And the seventh air valve 17, the eighth air valve 18, and the ninth air valve 19 whose capacity is gradually increased in the middle of the exhaust pipe 26.
Are provided in parallel.
又、前記ロードロック室９には、ウェーハが装填され
るボート７を反応炉内に装入、排出するエレベータ（図
示せず）が設けてある。前記ボート７を受台６を介して
載置するエレベータアーム27は、ボート７を反応炉１に
装入した状態で反応炉１を気密に閉塞する構成である。The load lock chamber 9 is provided with an elevator (not shown) for loading and discharging the boat 7 loaded with wafers into and from the reaction furnace. The elevator arm 27 on which the boat 7 is placed via the receiving table 6 is configured to hermetically close the reaction furnace 1 with the boat 7 loaded into the reaction furnace 1.
以下、作用について説明する。 Hereinafter, the operation will be described.
図示しない移載装置により、ロードロック室内のボー
ト９にウェーハを装填し、ロードロック室９を気密に密
閉し、更にゲートバルブ10によって反応炉１を閉塞す
る。Wafers are loaded into the boat 9 in the load lock chamber by a transfer device (not shown), the load lock chamber 9 is hermetically sealed, and the reactor 1 is closed by the gate valve 10.
第１エアバルブ11、第２エアバルブ12、第５エアバル
ブ15、第６エアバルブ16、第７エアバルブ17、第８エア
バルブ18、第９エアバルブ19、を閉じ、第３エアバルブ
13、第４エアバルブ14を開け、メカニカルブースタポン
プ23、真空ポンプ24により反応炉１内を真空引する。The first air valve 11, the second air valve 12, the fifth air valve 15, the sixth air valve 16, the seventh air valve 17, the eighth air valve 18, and the ninth air valve 19 are closed, and the third air valve is closed.
13. The fourth air valve 14 is opened, and the inside of the reaction furnace 1 is evacuated by the mechanical booster pump 23 and the vacuum pump 24.
次に、第３エアバルブ13を閉じ第７バルブ17を開き、
他のエアバルブについては元の状態としてロードロック
室９内の真空引する。ロードロック室９内の減圧が進む
と第７エアバルブ17を閉じ、第８エアバルブ18を開き、
更に第８エアバルブ18を閉じ、第９エアバルブ19を開い
て順次真空引する。Next, the third air valve 13 is closed and the seventh valve 17 is opened,
The other air valves are evacuated in the load lock chamber 9 as the original state. When the pressure in the load lock chamber 9 decreases, the seventh air valve 17 is closed, and the eighth air valve 18 is opened.
Further, the eighth air valve 18 is closed, and the ninth air valve 19 is opened to evacuate sequentially.
尚、ロードロック室９の真空引でバルブの容量を順次
大きくするのは、急激な排気で、メカニカルブースタポ
ンプ23、真空ポンプ24に過度の負担が掛らない様にする
為である。The reason why the capacity of the valve is sequentially increased by evacuating the load lock chamber 9 is to prevent an excessive load from being applied to the mechanical booster pump 23 and the vacuum pump 24 due to rapid exhaustion.
又、反応炉１、ロードロック室９を個別に真空引する
には、反応炉１内部が塵埃で汚染されることを防止する
為である。In order to prevent the inside of the reaction furnace 1 from being contaminated with dust, the evacuation of the reaction furnace 1 and the load lock chamber 9 individually is performed.
反応炉１、ロードロック室９の真空引が完了すると反
応炉１内にウェーハが装填されたボート７を装入する。When the evacuation of the reactor 1 and the load lock chamber 9 is completed, a boat 7 loaded with wafers is loaded into the reactor 1.
この状態で、第１エアバルブ11、第２エアバルブ12、
第４エアバルブ14、第７エアバルブ17、第８エアバルブ
18、第９エアバルブ19を閉じ、第３エアバルブ13、第５
エアバルブ15、第６エアバルブ16を開き、ターボ分子ポ
ンプ25、メカニカルブースタポンプ23、真空ポンプ24に
よって反応炉１内を高度に２次真空引する。In this state, the first air valve 11, the second air valve 12,
Fourth air valve 14, seventh air valve 17, eighth air valve
18, the ninth air valve 19 is closed, the third air valve 13, the fifth
The air valve 15 and the sixth air valve 16 are opened, and the inside of the reaction furnace 1 is highly secondary evacuated by the turbo molecular pump 25, the mechanical booster pump 23, and the vacuum pump 24.
反応炉１内の２次真空引が完了すると第３エアバルブ
13、第５エアバルブ15、第６エアバルブ16を閉じ、第１
エアバルブ11を開いて、窒素ガスを供給する。反応炉１
内が窒素ガスで充満され、常圧となったところで第２エ
アバルブ12を開く。When the secondary evacuation in the reactor 1 is completed, the third air valve
13. Close the fifth air valve 15 and the sixth air valve 16,
Open the air valve 11 and supply nitrogen gas. Reactor 1
When the inside is filled with nitrogen gas and the pressure becomes normal, the second air valve 12 is opened.
供給する窒素ガスに純粋な酸素ガスを混入し、反応炉
１に於いてウェーハに純粋な酸化膜を生成させる。Pure oxygen gas is mixed with the supplied nitrogen gas, and a pure oxide film is formed on the wafer in the reaction furnace 1.
酸化膜の生成が完了したら、ボート７をロードロック
室９内に取出し、全てのエアバルブを閉じ、ゲートバル
ブ10を閉じた状態で、ウェーハを充分に冷し、更にロー
ドロック室９より移出する。When the formation of the oxide film is completed, the boat 7 is taken out into the load lock chamber 9, the wafer is sufficiently cooled while all the air valves are closed, and the gate valve 10 is closed.
上記説明の通り、反応炉内部の大気を完全に排気し
て、更に窒素ガスを供給するので、反応炉内部は完全に
窒素ガスに置換した状態でウェーハの処理を行うことが
できる。As described above, since the atmosphere inside the reaction furnace is completely exhausted and nitrogen gas is further supplied, the wafer can be processed in a state where the inside of the reaction furnace is completely replaced with nitrogen gas.
尚、上記実施例では酸素を供給して酸化膜を生成させ
たが、窒化膜等、他のガスとの化合膜を生成させてよい
ことは言う迄もない。Although the oxide film is generated by supplying oxygen in the above embodiment, it goes without saying that a compound film with another gas such as a nitride film may be generated.
［発明の効果］ 以上述べた如く、本発明によれば、反応炉の内部を真
空引した後常圧迄窒素ガスを充満させるので、拡散雰囲
気中の窒素ガスに大気が混在することがなく、大気中の
不純物を含む酸化膜の生成を防止し得、製品品質の向
上、歩溜りの向上を図ることができる。[Effects of the Invention] As described above, according to the present invention, since the inside of the reactor is evacuated and filled with nitrogen gas until normal pressure, the atmosphere is not mixed with the nitrogen gas in the diffusion atmosphere. The formation of an oxide film containing impurities in the atmosphere can be prevented, so that the product quality can be improved and the yield can be improved.
第１図は本発明の１実施例に係る基本構成図、第２図は
従来の説明図である。 １は反応炉、７はボート、９はロードロック室、10はゲ
ートバルブ、11,12,13,14,15,16,17,18,19はエアバル
ブ、23はメカニカルブースタポンプ、24は真空ポンプ、
25はターボ分子ポンプを示す。FIG. 1 is a basic configuration diagram according to one embodiment of the present invention, and FIG. 2 is a conventional explanatory diagram. 1 is a reaction furnace, 7 is a boat, 9 is a load lock chamber, 10 is a gate valve, 11, 12, 13, 14, 15, 16, 17, 18, and 19 are air valves, 23 is a mechanical booster pump, and 24 is a vacuum pump. ,
25 indicates a turbo molecular pump.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 石津 秀雄 東京都西多摩郡羽村町神明台２―１―１ 国際電気株式会社羽村工場内 (56)参考文献 特開 昭62−122123（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/205 H01L 21/31 H01L 21/365 H01L 21/22 511 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Hideo Ishizu 2-1-1 Shinmeidai, Hamura-machi, Nishitama-gun, Tokyo Inside the Hamura Plant of Kokusai Electric Inc. (56) References JP-A-62-122123 (JP, A) ( 58) Field surveyed (Int.Cl. 7 , DB name) H01L 21/205 H01L 21/31 H01L 21/365 H01L 21/22 511
Claims (3)
行うウェーハ拡散処理方法に於いて、一旦反応炉に真空
引きした後、次に窒素ガスを常圧に充満させ、然る後、
反応ガスを流入させることを特徴とするウェーハ拡散処
理方法。In a wafer diffusion treatment method in which a wafer is heat-treated in a nitrogen gas atmosphere at normal pressure, a vacuum is once evacuated to a reaction furnace, and then nitrogen gas is filled to normal pressure.
A wafer diffusion processing method characterized by flowing a reaction gas.
に備え、反応炉とロードロック室とを個別に真空引きす
る請求項１項記載のウェーハ拡散処理方法。2. The wafer diffusion processing method according to claim 1, further comprising a load lock chamber connected to the reaction furnace, wherein the reaction furnace and the load lock chamber are individually evacuated.
室とを有する装置にてウェーハに熱処理を行うウェーハ
熱処理方法に於いて、前記反応室とロードロック室とを
真空引きした後、ロードロック室より反応炉にウェーハ
を装入し、然る後、更に反応炉のみを真空引きしたこと
を特徴とするウェーハ熱処理方法。3. A wafer heat treatment method for performing a heat treatment on a wafer by an apparatus having a reaction furnace and a load lock chamber connected to the reaction furnace, wherein the reaction chamber and the load lock chamber are evacuated and then loaded. A wafer heat treatment method, wherein a wafer is charged into a reaction furnace from a lock chamber, and then only the reaction furnace is evacuated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2157311A JP3058655B2 (en) | 1990-06-15 | 1990-06-15 | Wafer diffusion processing method and wafer heat treatment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2157311A JP3058655B2 (en) | 1990-06-15 | 1990-06-15 | Wafer diffusion processing method and wafer heat treatment method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0448725A JPH0448725A (en) | 1992-02-18 |
| JP3058655B2 true JP3058655B2 (en) | 2000-07-04 |
Family
ID=15646903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2157311A Expired - Lifetime JP3058655B2 (en) | 1990-06-15 | 1990-06-15 | Wafer diffusion processing method and wafer heat treatment method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3058655B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5484483A (en) * | 1993-02-05 | 1996-01-16 | Asm Japan, K.K. | Thermal treatment apparatus |
| WO1994018695A1 (en) * | 1993-02-05 | 1994-08-18 | Asm Japan K.K. | Apparatus for heat treatment |
-
1990
- 1990-06-15 JP JP2157311A patent/JP3058655B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0448725A (en) | 1992-02-18 |
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