JP2000182966A - Method and device for vapor-phase growth - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor-phase growth method of excellent crystallinity by improving control efficiency for the partial pressure of water content and oxygen. SOLUTION: A reactive chamber 13 which is, comprising a heating means 15, connected to first and second high-vacuum exhausting means 31 and 32, and at least first and second load lock chambers 11 and 12 wherein a substrate 1 for vapor-phase growth is carried into the reactive chamber 13 in vacuum condition, are provided. Here, with a third high-vacuum exhausting means 33 connected to the first load lock chamber 11, the reactive chamber 13 and the load lock chamber 11 are efficiently exhausted with additional high-vacuum exhausting means so that the water content and oxygen partial pressure are lowered sufficiently in a short time.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase growth method and a vapor phase growth apparatus, and in particular, to an ultra-high vacuum chemical vapor deposition (hereinafter referred to as "U").
HV-CVD method) and its vapor phase growth apparatus.

[0002]

2. Description of the Related Art Conventionally, the epitaxial growth of a silicon layer has been performed at a high temperature of 1000.degree.
However, when the silicon layer is epitaxially grown at a high temperature, the following problems occur. First, by heating at the time of forming the epitaxial layer, the impurity in the substrate once jumps out into the atmospheric gas, and is taken in the epitaxial layer again. It is difficult to form. Second, impurities from the substrate onto which the epitaxial layer is deposited tend to move into the epitaxial layer or vice versa, with the movement increasing with temperature.

Further, in order to increase the speed of a bipolar transistor used in an integrated circuit IC, it is essential to form a high-concentration and thin base layer. However, in the conventional ion implantation technology, 40 nm is used due to channeling of implanted impurities.
It has been difficult to achieve the following base widths.

In recent years, there has been proposed a method of forming a base layer using an epitaxial technique without channeling.
Research is being actively pursued. On the other hand, M
OSFET (Metal Oxide Semiconductor Field Effect
Transistor) is also expected to be selective epitaxial growth of an epitaxial wafer and a source / drain portion which is advantageous for a short channel, and is being studied.

[0005] In the conventional general silicon epitaxial growth, as described above, film formation is performed at a high temperature of usually 1000 ° C to 1200 ° C and in a large amount of high-purity hydrogen atmosphere.
As long as there is no damage layer or heavy metal contamination on the substrate surface where silicon epitaxial growth is performed, the crystallinity hardly deteriorates.

However, when the base layer of the bipolar transistor is epitaxially grown, it is necessary to obtain a steep impurity profile. Therefore, the heat treatment must be as low as possible.
Silicon epitaxial growth has been performed at a low temperature of from 900C to 900C.

As described above, in order to perform silicon epitaxial growth at a low temperature, a film must be formed in an atmosphere having a very high cleanliness. In particular, unless the partial pressure of moisture or oxygen inside the film forming apparatus is sufficiently reduced and controlled, epitaxial growth having good crystallinity cannot be achieved.

As described above, the reason why silicon epitaxial growth must be performed in a highly clean atmosphere in order to perform silicon epitaxial growth at a low temperature will be described with reference to FIG. FIG.
FIGS. 3A to 3C are schematic cross-sectional views schematically showing an epitaxial growth process on the silicon substrate 1.

In order to perform silicon epitaxial growth on the silicon substrate 1 shown in FIG. 3A at a low temperature, for example, before introducing the silicon substrate 1 into an epitaxial growth apparatus, the surface thereof is exposed to a dilute hydrofluoric acid treatment to obtain a clean surface. Even if it is performed, when the partial pressure of moisture or oxygen inside the epitaxial growth apparatus is high, as shown in FIG. 3B, the surface of the silicon substrate 1 is oxidized again before the epitaxial growth,
An oxide film is formed, or the oxide film 2 is formed in an island shape during the epitaxial growth. When such an oxide film 2 is generated, as shown in FIG. 3C, silicon crystal growth is hindered, and stacking faults 4 are easily generated in the silicon growth layer 3 grown on the substrate 1. If such stacking faults occur, the surface roughness (surface roughness) of the silicon growth layer 3
And its surface deteriorates, and good crystallinity cannot be obtained.

Whether or not such epitaxial growth is possible,
Regarding the relationship between the growth temperature and the partial pressure of water in the atmosphere,
Reported by G. Ghidini and FWSmith (J.
Electrochem. Soc. Vol. 131, pp. 2924 (1984). FIG. 4 is a diagram showing the above relationship in this document.

According to this, as shown by the boundary line a indicating whether or not epitaxial growth is possible, the film must be formed at a moisture partial pressure equal to or less than the moisture partial pressure on the straight line a under the set temperature condition (horizontal axis) of the film formation. This indicates that the silicon oxide is liable to be oxidized and the surface roughness is deteriorated, that is, there is a tendency not to grow a single crystal. The lower the moisture partial pressure is, the lower the silicon epitaxial growth is.

One of the solutions for reducing the water partial pressure in the above-mentioned low temperature epitaxial growth is UHV.
-CVD techniques are reported by BSMeyerson (e.g. Appl. Phys. Lett. 48, pp. 797 (1986), U.S. Patent No. 5,298,452, Japanese Patent No. 2,510,04).
No. 7).

This UHV-CVD apparatus is, for example, of a batch type, and has a film-forming chamber having a load lock chamber for taking in and out a silicon substrate and a heating means. Means are provided for performing the operations. According to the epitaxial growth method, a boat loaded with a plurality of silicon substrates is first loaded into a load lock chamber, evacuated by a turbo molecular pump and a rotary pump, and adsorbed to the atmosphere mixed with the silicon substrate and the surface of the silicon substrate. Remove moisture. Next, open the gate valve that separates the load lock chamber and the deposition chamber, and into the deposition chamber,
A board with a silicon substrate is loaded. At this time, the inside of the film formation chamber is in a state where the water and oxygen partial pressures are lower than 1.33 × 10 ⁻⁶ Pa and sufficiently cleaned using an exhaust system including a turbo molecular pump, a mechanical booster pump, and a rotary pump. Subsequently, the inside of the film formation chamber is set to a temperature for performing film formation, and a source gas for film formation is introduced to perform epitaxial growth on the silicon substrate.

[0014]

The above-mentioned batch type UH
In a V-CVD apparatus, the volume of a film formation chamber increases as the diameter of a silicon substrate increases. For example, processing an 8 inch silicon substrate requires a deposition chamber volume of about 37 liters. Further, since the surface area increases as the volume of the film forming chamber increases, there arises a problem that the influence of the released gas increases due to the adsorption of moisture and the material constituting the film forming chamber.

Further, by continuously repeating film formation, moisture brought in from the load lock chamber side is accumulated in the film formation chamber, and accumulation of moisture and oxygen contained in the source gas used for film formation cannot be ignored. The problem occurs.

Therefore, it is conceivable to take measures such as using a turbo-molecular pump having a high pumping speed, or leaving the system for a long time until the moisture and oxygen partial pressures are sufficiently reduced. However, in the former case, the turbocharger has a large pumping speed in order to reduce the partial pressure of moisture and oxygen, because the size of the device itself becomes large, the cost of the device increases, and the total amount of gas used in actual film formation is small. When a molecular pump is used, problems such as difficulty in controlling pressure during film formation and inability to effectively utilize a clean room space where maintenance costs are high occur. In the latter case, there is a problem that the throughput of the device is reduced.

The present invention seeks to solve the above-mentioned problems,
An object of the present invention is to provide a vapor-phase growth method and a vapor-phase growth apparatus which efficiently control the partial pressures of water and oxygen and have excellent crystallinity.

[0018]

In the vapor phase growth method according to the present invention, two or more high vacuum evacuation means are used together in a reaction chamber for performing vapor phase growth at a low temperature without supplying gas. The gas is evacuated to control the partial pressure of moisture or oxygen inside the film forming chamber, and thereafter, a source gas for performing a desired vapor phase growth is supplied to perform the vapor phase growth.

Further, in the vapor phase growth apparatus according to the present invention, a reaction chamber having heating means and connected to the first and second high vacuum evacuation means, and a substrate for performing vapor phase growth are placed in a vacuum state in the reaction chamber. And at least a first and a second load lock chamber which can be transported by the first load lock chamber, and a third high vacuum exhaust means is connected to the first load lock chamber. Then, in a state where gas is not supplied into the reaction chamber, the first and second high vacuum evacuation means are used together to increase the degree of vacuum in the reaction chamber, and when performing vapor phase growth in the reaction chamber, Evacuation is performed by the first high vacuum evacuation unit.

The second and third high vacuum evacuation means use a high-speed evacuation pump.

That is, the present invention provides a reliable method of evacuating water or residual gas accumulated in a film formation chamber in a continuous film formation for a short period of time by two or more exhaust means combined with a high pumping speed pump. In addition, the moisture and oxygen partial pressures are controlled so that vapor phase growth with excellent crystallinity can be performed with high throughput.

By using a pump with a high pumping speed in combination with the load lock chamber opened to the atmosphere, it is possible to discharge moisture and oxygen brought into the apparatus in a shorter time.

[0023]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the method and the apparatus of the present invention will be described. The method and apparatus of the present invention are used in batch type UHV-CVD for epitaxial growth at low temperature,
When gas is not supplied into the film forming chamber, the gas is evacuated by using a cryopump of a high-speed pump to control the partial pressure of moisture and oxygen in the film forming chamber.

FIG. 1 is a schematic diagram showing an example of the apparatus of the present invention applied to a vertical UHV-CVD apparatus. This device is
The reactor main body 10, the first load lock chamber 11, and the second
And a load lock chamber 12. The reactor body 10
A reaction chamber 13 made of quartz, for example, in the shape of a hanging bell,
For example, it is mounted on a mounting table 14 having a substantially cylindrical shape, and a heating means, for example, an energized heater is arranged on the outer periphery of the reaction chamber 13. Inside the reaction chamber 13, a gas introduction nozzle 16 to which a gas is supplied from the outside is arranged.

The first load lock chamber 11 is provided with a first gate valve 81 that opens and closes to the outside. The first load lock chamber 11 is connected to the second load lock chamber 12 by a second gate valve 81. Are connected via a gate valve 82. Further, the second load lock chamber 12 is disposed below the reaction chamber 13 and is connected to the reaction chamber 13 via a third gate valve 83.

To the reaction chamber 13, for example, a turbo molecular pump of the first high vacuum evacuation means 31 is connected via a valve 51, and further via the valve 52 the second high vacuum evacuation means 32, particularly high speed evacuation, is provided. The cryopump of the pump is connected.

A mechanical booster pump 40 and a dry pump 41 are connected via a valve 53 to the turbo molecular pump of the first high vacuum evacuation means 31, so that the external EX
H is exhausted.

On the other hand, a shunt is provided from the exhaust passage between the reaction chamber 13 and the valve 51, and this shunt is provided via the valves 54 and 55 to the mechanical booster pump 4.
2 and the dry pump 43 are connected.

On the other hand, a mechanical booster pump 44 and a dry pump 45 are connected to the first load lock chamber 11 via a valve 56 so as to exhaust air to the external EXH. In addition, a cryopump of a high-speed exhaust pump of the third high vacuum exhaust unit 33 is connected via a valve 57.

Valves 59 and 58 are arranged on the exhaust side of the second and third high vacuum exhaust means 32 and 33, respectively.

The mechanical load booster pump 42 and the dry pump 43 are connected to the second load lock chamber 12 via valves 60 and 61, and the second load lock chamber 12 is connected to the second load lock chamber 12 via a valve 62. For example, a fourth high vacuum evacuation unit 34 using a turbo molecular pump is connected. A mechanical booster pump 46 and a dry pump 47 are connected to the fourth high vacuum evacuation means 34 via a valve 63 so as to be evacuated to an external EXH.

In the second load lock chamber 12 disposed below the reaction chamber 13, a large number of substrates on which vapor phase growth is to be performed, for example, a board 17 on which a semiconductor substrate, for example, a silicon substrate 1, is mounted. , A boat elevator 18 to be moved in and out is arranged. The boat 17 is lifted by the boat
Is placed in the reaction chamber 13, and a lid 19 for closing the cylindrical mounting table 14 of the reaction chamber 13 is arranged. On this lid 19, for example, a boat 17 is inserted via a cylindrical heat insulator 20. Is arranged.

Next, a method of growing a silicon semiconductor layer, for example, on a substrate 1, for example, a silicon substrate, using the vapor phase growth apparatus having the above configuration will be described. First, a boat 17 for mounting the substrate 1 is arranged in the first load lock chamber 11. The first gate valve 81, the second
And the third gate valves 82 and 83 are closed, and the first
After the valve 56 is opened and the pumps 44 and 45 are operated to evacuate the interior of the load lock chamber 11 to a predetermined pressure, the valve 56 is closed and the valve 57 is opened to open the third high vacuum evacuation unit 33. Of the second load lock chamber 12, the valves 62 and 63 are opened, and the turbo molecular pump and the pumps 46 and 47 of the fourth high vacuum exhaust means 34 are used. Then, the interior of both load lock chambers 11 and 12 is evacuated to about 10 ^-6 Pa.

At the same time, the inside of the reaction chamber 13 is
In a state where the gas is not supplied, the valves 51 and 52 are opened, and the turbo molecular pump 3 of the first high vacuum exhaust unit 31 is opened.
At the same time as 1, in particular, the cryopump of the second high vacuum evacuation means 32 is operated to evacuate the inside of the reaction chamber 13 to about 10 ⁻⁷ Pa
Exhaust to a degree. The inside of the reaction chamber 13 is
It is heated to about 400 ° C. by the heating means 15.

On the other hand, a substrate 1 to be subjected to vapor phase growth, for example, a silicon substrate, is treated with a sulfuric acid / hydrogen peroxide solution heated to a required temperature outside the vertical UHV-CVD apparatus and adhered to the substrate surface. Remove organics. And then,
Particles are removed with an ammonia-hydrogen peroxide aqueous solution heated to a required temperature, dilute hydrofluoric acid treatment is performed to remove metal contaminants on the substrate surface, and to remove a natural oxide film formed on the substrate surface.

Next, the interior of the first load lock chamber 11 is set to atmospheric pressure, the first gate valve 81 is opened, and the boat 17 in the first load lock chamber 11 is placed in the boat 17 in the first load lock chamber 11. Are mounted.

Thereafter, after the first gate valve 81 is closed, the first load lock chamber 11 is brought to a pressure of about 10 ^-6 Pa using the vacuum exhaust means 33 together.

In this manner, the first and second load rollers
About 10 lock chambers 11 and 12 ^-6In the state of Pa
The second gate valve 82 is opened, and the button on which the substrate 1 is mounted is opened.
Transfer the board 17 inside the first load lock chamber 11
Into the second load lock chamber 12 using a machine (not shown).
Move. After that, the second gate valve 82 is closed, and the second gate valve 82 is closed.
2 The interior of the load lock chamber 12 is
About 10^-6The pressure is Pa.

Next, the third gate valve 83 is opened,
While introducing hydrogen gas from the gas introduction nozzle 16 in the reaction chamber 13, the boat elevator 18 is raised, and the boat 17 on which the substrate 1 is mounted is moved to the reaction chamber 13. During the movement of the boat 17, the valves 51, 5
2, 54 and 55 are closed, valves 60 and 61 are opened, and mechanical booster pump 42 and dry pump 4
3 is operated to exhaust air.

In this manner, with the boat elevator 18 raised, the lid 19 abuts on the mounting table 14 to close the reaction chamber 13 and at the same time, the gas introduction nozzle 16
The introduction of hydrogen gas from is stopped, and valves 60 and 61 are closed.

Next, after opening the valves 54 and 55 to evacuate the interior of the reaction chamber 13 to a desired pressure, the valves 54 and 55 are closed, and the valves 51 and 53 are opened to perform high vacuum evacuation. When the pressure reaches 10 ^-5 Pa, the valve 52 is opened, high vacuum evacuation is performed using the cryopump of the second high vacuum evacuation unit 32 until the desired pressure is reached, and then the valve 52 is closed.

Next, while introducing hydrogen gas from the gas introduction nozzle 16 into the reaction chamber 13, for example, at 900 ° C.
By heating to a degree, the natural oxide film formed on the surface of the silicon substrate is reduced and removed. Thereafter, the temperature is lowered to a desired film forming temperature.

Next, the inside of the reaction chamber 13 is evacuated to high pressure on the turbo molecular pump side of the first high vacuum evacuation means 31, and a gas necessary for film formation is supplied from the gas introduction nozzle 16. At this time, the source gas for epitaxial growth is:
The pressure is set so as to be a molecular flow region.

In order to perform silicon epitaxial growth, monosilane (SiH) is used as a silicon source gas.
₄ ) and disilane (Si ₂ H ₆ ) can be used.
In order to form a silicon-germanium mixed crystal layer, a germane (GeH ₄ ) gas may be supplied simultaneously with the silane-based source gas. Further, when the epitaxial growth layer is doped with a dopant such as boron (B) or phosphorus (P), diborane (B ₂ H ₆ ) is used as a supply gas.
Alternatively, phosphine (PH ₃ ) or the like can be introduced.

In this manner, a desired silicon layer or silicon layer is formed on the substrate 1 such as a silicon substrate.
A germanium mixed crystal layer is formed. After the film formation by the vapor phase growth is performed in this manner, the temperature in the reaction chamber 13 is lowered, and the boat 17 is moved to the second load lock chamber 12. Thereafter, the substrate 1 is carried out from the substrate 1 having a film formation layer formed by epitaxial growth, for example, a silicon substrate vertical UHV-CVD apparatus, by performing a procedure reverse to the procedure for transporting the substrate 1 from the atmosphere to the inside of the reaction chamber 13.

As described above, in the apparatus of the present invention,
By using the first and second high vacuum evacuation means 31 and 32, specifically, the combined use of a turbo molecular pump and a cryopump, the inside of the reaction chamber 13 can be effectively evacuated, and the water partial pressure can be controlled. Becomes possible. Therefore, the throughput can be effectively improved.

As described above, in the method and apparatus of the present invention, the reaction chamber 1 is supplied from the atmosphere through the first load lock chamber 11 and the second load lock chamber 12.
3 to be transported. At this time, the first load lock chamber 11 and the second load lock chamber 12 are also evacuated to a high vacuum in the same manner as the reaction chamber 13, but since the load lock chambers 11 and 12 are at room temperature, they are constantly heated. The water partial pressure is higher than that of the reaction chamber 13.

The boat 17 on which the film-formed substrate 1 is placed in the reaction chamber 13 is moved to the second load lock chamber 12, where the substrate 1 and the boat 1
7 and the heat insulator 20 are heated to, for example, about 400 ° C., so that the heated substrate 1, the boat 17 and the heat insulator 20 allow the second load lock chamber 1 to be heated.
There is a problem that the moisture adsorbed in the interior of the heating device 2 is heated and released.

Further, as another problem, the gas used for film formation is passed through a purification unit (not shown) for adsorbing and removing moisture and oxygen while the moisture and oxygen are removed. Although it is supplied to the reaction chamber 13, there is a problem that water and the like accumulated in the gas supply pipe are simultaneously sent into the reaction chamber 13.

Therefore, when the above-described film forming operation is repeatedly and continuously performed, there is a problem that moisture and the like are accumulated in the reaction chamber 13. In such a configuration in which only the turbo molecular pump of the first high vacuum evacuation unit 31 in FIG. 1 is provided as in the conventional configuration, such water removal is performed by sufficiently removing the water accumulated in the reaction chamber 13 described above. This requires an extremely long exhaust time, which lowers the throughput.

In contrast, according to the present invention, for example, the first
The pumping speed of the high molecular vacuum pumping means 31 for the moisture of the turbo molecular pump is 1500 [l (liter) / s], and the pumping speed of the second high vacuum pumping means 32 for the water of the cryopump is 6900 [l / S].

FIG. 2 shows a case where continuous film formation is performed.
The relationship between the evacuation time when the silicon substrate 1 is transported from the atmosphere to the reaction chamber 13 from the atmosphere to the reaction chamber 13 and the inside of the reaction chamber 13 is evacuated to high pressure, the total pressure inside the reaction chamber 13 and the partial pressure of moisture and oxygen. It is shown. In FIG. 2, ☆, ○, and □ marks indicate the case where high vacuum evacuation was performed using only the turbo molecular pump. This shows a case where exhaust is performed using both a molecular pump and a cryopump. As is clear from this, when the turbo molecular pump and the cryopump according to the present invention are used together, the desired degree of vacuum can be obtained in a short time because the total pumping speed is high.

Therefore, according to the present invention, it is necessary to provide a large turbo-molecular pump having a necessary capacity for removing water accumulated in the reaction chamber 13 when a film is continuously formed. Instead, it is sufficient to provide a turbo-molecular pump capable of exhausting a gas required for film formation at a desired pressure.

Further, in the above-mentioned device of the present invention, the first
Is provided with a cryopump of the third high vacuum evacuation means 33 in the load lock chamber, so that the evacuation speed for the moisture brought in from the atmosphere is increased as compared with, for example, a turbo molecular pump, so that the evacuation including the water exclusion Can be performed in a short time. Thereby, the moisture accumulated in the second load lock chamber 12 and the reaction chamber 13 in the UHV-CVD apparatus can be effectively reduced.

In the above-described example, the present invention is applied to a vertical U
Although the configuration is an HV-CVD apparatus, the present invention is not limited to the above-described example, and can be variously modified, for example, can be applied to a horizontal UH-CVD apparatus.

[0056]

As described above, according to the method of the present invention,
Controlling the partial pressure of moisture and oxygen, that is, the method of evacuating the inside of a film forming chamber for performing vapor phase growth at a low temperature by using two or more high-vacuum evacuating means in a state where gas is not supplied, that is, Since the elimination can be performed effectively in a short time, vapor phase growth such as epitaxial growth having excellent crystallinity can be performed.

According to the apparatus of the present invention, the UHV-CV
Since high-speed epitaxial growth, which is a problem in the D apparatus, can be reliably performed in a short time in removing moisture accumulated inside the apparatus, a high-throughput apparatus is provided.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of an example of a vapor phase growth apparatus according to the present invention.

FIG. 2 is a graph showing the relationship between the evacuation time, the total pressure inside the reaction chamber, and the partial pressures of water and oxygen for explaining the effect of the present invention.

FIGS. 3A to 3C are schematic schematic cross-sectional views showing an epitaxial growth process on a silicon substrate.

FIG. 4 is a diagram showing the relationship between the propriety of epitaxial growth, the growth temperature, and the partial pressure of water in the atmosphere.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Substrate, 2 ... Oxide film, 3 ... Silicon growth film, 4 ... Defect, 10 ... Reactor main body, 11 ...
First load lock chamber, 12: second load lock chamber, 13: reaction chamber, 14: mounting table, 1
5 ... heating means, 16 ... gas introduction nozzle, 17
..Boats, 18 elevators, 19 lids, 20
... heat insulator, 31 ... first high vacuum exhaust means, 32
... second high vacuum evacuation means, 33 ... third high vacuum evacuation means, 40, 42, 44, 46 ... mechanical booster pumps, 41, 43, 45, 47 ... dry pumps 51, 52, 53, 54, 55, 56, 57, 5
8, 59, 60, 61, 62, 63 ... valve, 81
... first gate valve, 82 ... second gate valve, 83 ... third gate valve

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Takeyoshi Kawamoto 6-7-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Inside Sony Corporation (72) Inventor Seiichi Takahashi 523 Yokota, Sanmu-cho, Sanmu-gun, Chiba Japan Inside Chiba Super Materials Research Institute, Technology Co., Ltd. (72) Inventor Tetsuo Mihashi 523 Yokota, Yamatake-cho, Sanmu-gun, Chiba Prefecture Inside Japan Sky Technology Co., Ltd. Address Nippon Masaki Technology Co., Ltd. Chiba Super Materials Research Laboratory F-term (reference) 4K030 AA05 AA06 BA09 BA29 BB01 CA04 EA11 FA10 GA02 GA12 JA09 KA23 KA28 4M104 BB01 DD44 5F045 AA07 AB02 AC01 AC19 BB12 EB08 EG03 EG05 5F103 AA04 DD47 HH03 NN05 RR06

Claims (6)

[Claims] 1. A reaction chamber for performing vapor phase growth at a low temperature is evacuated using a combination of two or more high-vacuum evacuation means in a state where gas is not supplied. A vapor phase growth method comprising controlling a pressure. 2. The vapor phase growth method according to claim 1, wherein said vapor phase growth is silicon or silicon-germanium mixed crystal epitaxial growth. 3. A reaction chamber having a heating means and connected to the first and second high vacuum evacuation means, and at least a reaction chamber capable of transporting a substrate on which vapor phase growth is performed to the reaction chamber in a vacuum state. First and second load lock chambers, and the first load lock chamber is connected to a third high vacuum evacuation unit, and the first load lock chamber is connected to the first load lock chamber without supplying gas to the reaction chamber. And the second high vacuum evacuation unit is used in combination to increase the degree of vacuum in the reaction chamber, and when performing vapor phase growth in the reaction chamber, evacuation is performed by the first high vacuum evacuation unit. Vapor growth apparatus. 4. The vapor phase growth apparatus according to claim 3, wherein said second and third high vacuum evacuation means are constituted by a high-speed evacuation pump. 5. The vapor phase growth apparatus according to claim 3, wherein said second and third high vacuum evacuation means are cryopumps. 6. The vapor phase growth apparatus according to claim 3, wherein the vapor phase growth is silicon or silicon-germanium mixed crystal epitaxial growth.