WO1994018695A1 - Apparatus for heat treatment - Google Patents
Apparatus for heat treatment Download PDFInfo
- Publication number
- WO1994018695A1 WO1994018695A1 PCT/JP1993/000146 JP9300146W WO9418695A1 WO 1994018695 A1 WO1994018695 A1 WO 1994018695A1 JP 9300146 W JP9300146 W JP 9300146W WO 9418695 A1 WO9418695 A1 WO 9418695A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- reaction chamber
- flange
- moving mechanism
- chamber
- quartz
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D99/00—Subject matter not provided for in other groups of this subclass
- F27D99/0073—Seals
Definitions
- the present invention relates to a semiconductor manufacturing apparatus, particularly to an oxidation / diffusion apparatus.
- Figures 1a and 1b and Figures 2a and 2b show a conventional vertical heat treatment apparatus and a conventional load-lock heat treatment apparatus that perform the oxidation and diffusion processes at normal pressure.
- a heating element (2) is provided around the reaction chamber (1) made of high-purity material such as quartz, and one open end of the reaction chamber (1) is moved by a moving mechanism (not shown). Sealed by a sealed flange.
- the moving body and the seal flange, which are moved by the moving mechanism, are connected by a panel body to improve the sealing between the seal flange and the reaction chamber. Since the pressure inside the reaction chamber and the external pressure during the process are almost the same, it is sufficient for the panel body to have a repulsive force enough to lightly press the sealing flange through the sealing material in the reaction chamber.
- the seal flange is composed of a quartz flange (9) and a metal flange (10). When the reaction chamber is sealed, only the quartz flange is exposed inside the chamber.
- the reaction chamber (1) is provided with a gas inlet (6), which runs along the outer side wall of the chamber to one closed end of the reaction chamber, from which the gas enters the chamber. Is introduced.
- a gas exhaust port (7) is provided at one open end of the reaction chamber 1 from which gas is exhausted.
- a boat (3) and a boat table (5) holding a plurality of heat-treated bodies (4) in a stacked state are provided on the seal flange. Insertion and removal are performed inside the member.
- the object to be heat-treated is set on the boat.
- the moving mechanism moves the boat into the reaction chamber, seals the flange, and seals the inside of the reaction chamber.
- An inert gas such as nitrogen gas is introduced from the gas inlet, and purges air components that enter during the movement of the boat into the chamber.
- a predetermined process gas is introduced. In the dry oxidation process, oxygen and the like are generated, and in the wet oxidation process, steam and the like generated by burning oxygen and hydrogen in an external combustion device (not shown) provided in front of the inlet (6).
- phosphorus oxychloride (POCl 3 ) or the like is introduced.
- the inner diameter of the inlet is usually from 10 mm to 20 mm.
- the exhaust port (7) is open to the atmospheric pressure atmosphere, and the introduced gas is discharged from the exhaust port so as to be pushed out after contributing to a predetermined reaction.
- the inner diameter of the exhaust port is usually several 10 mm to 20 several mm, and is often larger than the inner diameter of the inlet.
- FIGS. 2a and 2b show examples.
- a moving mechanism composed of a ball screw (13), a moving body (12) and the like is placed inside the moving mechanism housing chamber (11) for sealing from the atmosphere.
- the moving mechanism storage chamber 1 (11) has an exhaust port (15) for evacuating the inside.
- An opening (14) for inserting and taking out the object to be heat-treated is provided in the moving mechanism housing chamber (11), and is connected to the front chamber (17) via a gate valve (16).
- the front room houses a transfer mechanism for inserting and removing the object to be heat-treated from the opening into the boat.
- a metal manifold (23) having an exhaust port (7b) is connected to the reaction chamber 1 to evacuate the inside of the reaction chamber made of high-purity material such as quartz, and the manifold is cooled. (23b). After the process is completed, the inside of the boat is evacuated to about 10 to 6 Torr by a vacuum exhaust device connected to the exhaust port (7b), and then the boat is unloaded to take out the object to be heat-treated.
- a metal manifold is provided to evacuate the inside of the reaction chamber. This causes heavy metal contamination of the object to be heat-treated, fighting this point, and deteriorating the performance of the equipment. Since the oxidation process is usually performed at a high temperature of around 100,000, the effect of the radiant heat is significant. Even if a cooling unit is provided, it is inevitable that metal contamination becomes significantly larger than in a conventional oxidation diffusion apparatus in which the entire inner surface of the reaction chamber is made of quartz. If the cooling is excessive, water vapor or the like will be condensed on the inner surface of the manifold during wet oxidation, causing even more serious problems such as metal corrosion.
- the radiating heat from the lower part of the heating element increases due to the cooling, and the heat equalizing characteristic of the heating element deteriorates.
- the cleanliness of the atmosphere in the apparatus has a limit depending on the purity of the supplied nitrogen gas and the cleanliness of the gas supply system.
- the pressure in the transfer mechanism storage chamber should be constantly reduced to a high vacuum atmosphere of 10 to 7 Torr or less in order to further reduce the concentration of residual oxygen and water vapor. Need to be kept.
- the atmosphere in the moving mechanism storage chamber was set to normal pressure with nitrogen gas, and the system was evacuated after the process was completed. Cost of high-purity nitrogen gas increases.
- An exhaust port for evacuating the inside of the reaction chamber is provided in the reaction chamber, and the seal flange has a double structure of a quartz flange and a metal flange, and when the metal flange is at the movement limit position, The seal is formed between the reaction chamber and the quartz flange via a seal material.
- the size of the repulsive force generated by moving the moving body after the seal flange moves to the sealing position by connecting the seal flange and the moving body with the panel body
- the moving body is moved and stopped so that the force applied to the seal flange from one side of the reaction chamber is equal to or greater than the pressure applied.
- Figure 1a shows a conventional heat treatment apparatus.
- Figure lb shows a conventional vertical heat treatment apparatus with the boat table taken out of the reaction chamber.
- Fig. 2a shows a conventional load-lock type ripening device.
- Figure 2b shows a conventional load-lock type heat treatment apparatus with the boat table taken out of the reaction chamber.
- FIG. 3 is an overall view of an apparatus showing the present invention.
- FIG. 4a is a partially enlarged view of the device shown in FIG.
- FIG. 4b is a partially enlarged view of the device shown in FIG.
- FIG. 4c is a partially enlarged view of another embodiment.
- FIG. 3 is an overall view of an apparatus showing one embodiment of the present invention.
- FIG. 4a is a partially enlarged view of FIG.
- An exhaust port (7) for evacuating the inside of the reaction chamber (1) is provided.
- the inner diameter of the exhaust port (7) needs to be at least about 50 mm or more in order to make a high vacuum inside the reaction chamber in a short time.
- the inner diameter of the reaction chamber is 240 mm, and the inner diameter of the exhaust port is 100 Omm. It may be provided separately, or may be branched at the end of the exhaust port (7).
- a heat insulating material (8) is attached around the reaction chamber around the exhaust port (7) to prevent heat from escaping from this part, improve the uniformity of the heating element, and reduce the temperature inside the reaction chamber. ⁇ Tsu DOO steam during the oxidation process is maintained at a temperature of not condensation inside D
- the quartz flange (9) on which the boat (3) and the boat table (5) are placed It is placed on a metal flange (10) and moved by a moving mechanism.
- the shoulder of the metal flange (10) comes into contact with the shoulder (11) of the moving mechanism storage chamber and cannot move any further.
- the moving body (12) is further moved to become the dimension "B".
- the repulsive force of the panel body which is the product of the panel constant of panel body (30) and the amount of compression "A-B"
- the metal flange (10) is the moving mechanism storage chamber (11). Is pressed against the shoulder. In this state, a normal pressure process is performed in the reaction chamber while the transfer mechanism storage chamber 1 is kept at a vacuum.
- a force having a magnitude obtained by multiplying the pressure difference between the two chambers by the area within the effective diameter of the seal member (18) is applied to the seal flange from one side of the mobile device oval storage chamber.
- the spring constant of the panel body and the amount of compression “A-B” are determined so that the repulsive force of the spring body is greater than the magnitude of this force. Even if a force due to the pressure difference is applied from above, the metal flange (10) acts as reinforcement against the quartz flange (9), so that the quartz flange (9) is not damaged. In the case of (10), since the force applied from the one side of the mobile machine fine storage chamber is greater than the force applied from the lower side by the spring body, it is not moved downward.
- the flange at the end of the reaction chamber (1) is mounted on the moving mechanism storage chamber (11) via a seal material (19a) and a buffer material (21a).
- the cooling section may be provided on the moving mechanism storage chamber side.
- FIG. 4c is a partially enlarged view showing another embodiment.
- the reaction chamber 1 (1) is formed in a tubular shape to the lower side from the flange portion, the inner diameter is widened near the end portion, and the end portion is sealed. This refracts the heat energy transmitted by the light beam inside the transparent quartz and reduces the effect of heat on the seal material (18).
- the flange portion of the first reaction chamber (1) is fixed on a flange (22) having a cooling means (22b), and the flange (22) is fixed on a moving mechanism housing chamber (11).
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP93903315A EP0635875B1 (en) | 1993-02-05 | 1993-02-05 | Apparatus for heat treatment |
KR1019930703897A KR100270422B1 (en) | 1993-02-05 | 1993-02-05 | Apparatus for heat treatment |
DE69307136T DE69307136T2 (en) | 1993-02-05 | 1993-02-05 | ARRANGEMENT FOR THERMAL TREATMENT. |
PCT/JP1993/000146 WO1994018695A1 (en) | 1993-02-05 | 1993-02-05 | Apparatus for heat treatment |
US08/192,147 US5484483A (en) | 1993-02-05 | 1994-02-04 | Thermal treatment apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP1993/000146 WO1994018695A1 (en) | 1993-02-05 | 1993-02-05 | Apparatus for heat treatment |
US08/192,147 US5484483A (en) | 1993-02-05 | 1994-02-04 | Thermal treatment apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1994018695A1 true WO1994018695A1 (en) | 1994-08-18 |
Family
ID=26434372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1993/000146 WO1994018695A1 (en) | 1993-02-05 | 1993-02-05 | Apparatus for heat treatment |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO1994018695A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002353210A (en) * | 2001-05-25 | 2002-12-06 | Tokyo Electron Ltd | Equipment and method for heat treatment |
KR100431657B1 (en) * | 2001-09-25 | 2004-05-17 | 삼성전자주식회사 | Method and apparatus for processing a wafer, method and apparatus for etching a wafer |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63161612A (en) * | 1986-12-25 | 1988-07-05 | Toshiba Ceramics Co Ltd | Vertical type furnace |
JPS63177426A (en) * | 1987-01-17 | 1988-07-21 | Oki Electric Ind Co Ltd | Vapor growth method and apparatus |
JPH01251610A (en) * | 1987-11-27 | 1989-10-06 | Tel Sagami Ltd | Heat treating apparatus |
JPH0448725A (en) * | 1990-06-15 | 1992-02-18 | Kokusai Electric Co Ltd | Diffusion method and its device |
-
1993
- 1993-02-05 WO PCT/JP1993/000146 patent/WO1994018695A1/en not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63161612A (en) * | 1986-12-25 | 1988-07-05 | Toshiba Ceramics Co Ltd | Vertical type furnace |
JPS63177426A (en) * | 1987-01-17 | 1988-07-21 | Oki Electric Ind Co Ltd | Vapor growth method and apparatus |
JPH01251610A (en) * | 1987-11-27 | 1989-10-06 | Tel Sagami Ltd | Heat treating apparatus |
JPH0448725A (en) * | 1990-06-15 | 1992-02-18 | Kokusai Electric Co Ltd | Diffusion method and its device |
Non-Patent Citations (2)
Title |
---|
GENICHI HORIKOSHI, Vacuum Technology, March 18, 1983 (18.03.83), Takuo Kanno, Zaidan Hojin Tokyo Daigaku Shuppankai, p. 49-51. * |
See also references of EP0635875A4 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002353210A (en) * | 2001-05-25 | 2002-12-06 | Tokyo Electron Ltd | Equipment and method for heat treatment |
KR100431657B1 (en) * | 2001-09-25 | 2004-05-17 | 삼성전자주식회사 | Method and apparatus for processing a wafer, method and apparatus for etching a wafer |
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