JPH06191972A - Complex member - Google Patents
Complex memberInfo
- Publication number
- JPH06191972A JPH06191972A JP4347503A JP34750392A JPH06191972A JP H06191972 A JPH06191972 A JP H06191972A JP 4347503 A JP4347503 A JP 4347503A JP 34750392 A JP34750392 A JP 34750392A JP H06191972 A JPH06191972 A JP H06191972A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- silicon carbide
- plane
- film
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5057—Carbides
- C04B41/5059—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00939—Uses not provided for elsewhere in C04B2111/00 for the fabrication of moulds or cores
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、Ｘ線反射鏡の構成部材
やガラス光学素子の成形型等に好適なセラミック母材の
表面に炭化珪素を化学蒸着して成る複合部材に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite member obtained by chemically vapor-depositing silicon carbide on the surface of a ceramic base material suitable for a component of an X-ray reflecting mirror, a mold for a glass optical element and the like.
【０００２】[0002]
【従来の技術】従来よりＸ線反射鏡としては、銅等の金
属母材を鏡面研磨し、その表面に金を蒸着させたもの等
が良く知られているが、Ｘ線は短波長域の高密度エネル
ギー光であるため使用中に前記鏡面の蒸着膜が剥離した
り、鏡面が歪んだり、金属母材が溶解する等の熱損を受
けやすいという問題があった。2. Description of the Related Art Conventionally, as an X-ray reflecting mirror, it is well known that a metal base material such as copper is mirror-polished and gold is vapor-deposited on its surface. Since the high-density energy light is used, there is a problem that the vapor deposition film on the mirror surface is easily peeled off during use, the mirror surface is distorted, and the metal base material is melted.
【０００３】また、ガラス光学素子の成形型としては、
ガラスが成形型に融着するのを防止し、かつ高精度に研
磨加工された成形型表面を保護するために、各種離型膜
が被着形成されているが、例えば、鉛を含有したガラス
材料を成形する際、前記硬質カーボンやダイヤモンドか
ら成る離型膜は、該カーボン膜やダイヤモンド膜の炭素
がガラス材料中に含有する鉛を還元し、ガラス成形体の
表面に極めて小量だが鉛を析出して表面が白濁するとと
もに、表面粗さが低下してしまい、その上、析出した鉛
によって前記離型膜には成形中に微小なスクラッチが多
発し、離型膜の耐久性を著しく劣化させるという問題が
あった。Further, as a mold for a glass optical element,
In order to prevent the glass from being fused to the forming die and to protect the surface of the forming die that has been highly accurately polished, various mold release films are adhered and formed, for example, glass containing lead. When molding the material, the release film composed of the hard carbon or diamond reduces the lead contained in the glass material by the carbon of the carbon film or the diamond film, so that the surface of the glass molded body contains a very small amount of lead. The surface becomes cloudy as a result of precipitation, and the surface roughness decreases, and in addition, minute scratches frequently occur during molding on the release film due to the precipitated lead, which significantly deteriorates the durability of the release film. There was a problem of letting it.
【０００４】そこで係る問題を解消せんとして、炭化珪
素等のセラミックスあるいは黒鉛の焼結体等の表面に、
耐熱性や熱伝導性等の物理的特性に優れ、光学的にも短
波長域で高い反射率を有し、化学的にも安定な特性を有
する炭化珪素を、化学蒸着法等により蒸着した複合材と
することが種々研究されている。In order to solve this problem, the surface of ceramics such as silicon carbide or the sintered body of graphite,
A composite of silicon carbide, which has excellent physical properties such as heat resistance and thermal conductivity, has high optical reflectivity in the short wavelength range, and is chemically stable, and is deposited by chemical vapor deposition. Various studies have been conducted on the use of wood.
【０００５】しかしながら、前記炭化珪素の蒸着膜は、
結晶面の方位によって硬さが異なり、Ｘ線反射鏡やガラ
ス光学素子の成形型等に要求される、例えば表面粗さが
粗さ曲線の中心線からの凹凸の標準偏差ＲＭＳで１．０
ｎｍ程度の超平滑面を得ようとすると、結晶の配向が充
分に得られない場合、前記方位により研磨速度が異なる
ことから該方位による段差を生じ易く、極めて長時間の
研磨と高度で特殊な研磨技術を必要とし、製造コストが
かかり過ぎ、前述のような超平滑面が簡単に得られない
という問題があった。However, the vapor-deposited film of silicon carbide is
The hardness differs depending on the orientation of the crystal plane, and is required for a mold such as an X-ray reflecting mirror or a glass optical element. For example, the surface roughness is 1.0 as a standard deviation RMS of irregularities from the center line of the roughness curve.
When it is attempted to obtain an ultra-smooth surface of about nm, when the crystal orientation cannot be sufficiently obtained, the polishing rate varies depending on the above-mentioned orientation, so that a step is likely to occur due to the orientation, and extremely long-time polishing and highly specialized There is a problem that the polishing technique is required, the manufacturing cost is too high, and the above-mentioned super smooth surface cannot be easily obtained.
【０００６】そこで係る問題を解消するために、蒸着し
た炭化珪素膜の結晶面を研磨加工し易い方位であるミラ
ー指数表示（以下、ミラー指数と記す）の（２２０）面
に配向するようにしたり、あるいは比較的高い硬度を示
す方位である（１１１）面に配向するようにした複合部
材が特開平４−１１４９７１号公報等に提案されてい
る。In order to solve such a problem, the crystal plane of the vapor-deposited silicon carbide film is oriented to the (220) plane of the Miller index display (hereinafter referred to as the Miller index), which is an orientation that facilitates polishing. Alternatively, a composite member in which the (111) plane, which is an azimuth showing a relatively high hardness, is oriented is proposed in Japanese Patent Application Laid-Open No. 4-114971.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、前述の
ように炭化珪素蒸着膜の結晶面をミラー指数の（２２
０）面に配向させた場合、（１１１）面に比べて研磨し
易く、非球面研磨をはじめ曲面を有する形状の研磨も比
較的容易にでき、良好な表面粗さが得られるものの、
（２２０）面に配向した蒸着膜は該膜自体の内部応力が
高いため、炭化珪素質焼結体や黒鉛等を母材にすると、
残留応力が高くなる傾向があった。However, as described above, the crystal plane of the silicon carbide vapor-deposited film has a mirror index of (22).
When oriented to the (0) plane, it is easier to polish than the (111) plane, and it is possible to relatively easily polish aspherical surfaces and shapes having a curved surface, and a good surface roughness can be obtained.
Since the vapor deposition film oriented to the (220) plane has a high internal stress of the film itself, when a silicon carbide sintered body or graphite is used as a base material,
The residual stress tended to be high.
【０００８】その結果、母材との熱膨張率の差から常温
に冷却した時、あるいは研削や研磨加工する時に、前記
残留応力が増長されて炭化珪素膜にクラックが発生し易
く、実用的でなかった。As a result, due to the difference in the coefficient of thermal expansion from the base material, the residual stress is increased and the silicon carbide film is apt to crack when cooled to room temperature or during grinding or polishing. There wasn't.
【０００９】また、前記結晶面を比較的硬度が高い（１
１１）面に配向させた場合、母材が炭化珪素質焼結体で
は蒸着膜への残留応力も低く前述のようなクラックは発
生し難いものの、硬度が高く研磨加工が困難であり、と
りわけ球面研磨や非球面研磨をはじめ、曲面を有する形
状の研磨においては、平面研磨の表面粗さと同程度に研
磨仕上げすることが極めて困難であり、例えば、前記
（１１１）面に配向した蒸着膜を平面研磨すると表面粗
さは最大高さＲｍａｘ．で約９ｎｍ、ＲＭＳで約１ｎｍ
程度の超平滑面が得られるのに対し、非球面研磨すると
せいぜいＲｍａｘ．で約３０ｎｍ、ＲＭＳで４ｎｍ程度
の表面粗さしか実現できないという課題があった。Further, the crystal plane has a relatively high hardness (1
11) When oriented in the plane, when the base material is a silicon carbide based sintered body, the residual stress in the deposited film is low and the cracks described above are less likely to occur, but the hardness is high and polishing processing is difficult, and in particular the spherical surface. In polishing of a shape having a curved surface such as polishing and aspherical polishing, it is extremely difficult to finish the polishing to the same degree as the surface roughness of the planar polishing. For example, a vapor deposition film oriented to the (111) plane is planarized. When polished, the surface roughness has a maximum height Rmax. About 9 nm, RMS about 1 nm
While an ultra-smooth surface of the order of magnitude can be obtained, polishing with an aspherical surface results in at most Rmax. However, there is a problem that only a surface roughness of about 30 nm for RMS and about 4 nm for RMS can be realized.
【００１０】[0010]
【発明の目的】本発明は前記課題に鑑み開発されたもの
で、その目的は蒸着した炭化珪素膜にクラックが発生せ
ず、研磨加工し易く、平面研磨は勿論、非球面研磨等を
はじめ曲面を有する形状の研磨においても超平滑面が得
られ、耐久性に優れた複合部材を提供することにある。SUMMARY OF THE INVENTION The present invention has been developed in view of the above-mentioned problems, and its purpose is to prevent the occurrence of cracks in the vapor-deposited silicon carbide film, to facilitate polishing, and to perform flat polishing as well as aspherical polishing and other curved surfaces. An object of the present invention is to provide a composite member which has a super smooth surface even in the polishing of a shape having the above and has excellent durability.
【００１１】[0011]
【課題を解決するための手段】本発明の複合部材は、セ
ラミック母材の表面に化学蒸着した炭化珪素膜の結晶面
が、ミラー指数で表示した（１１１）面と（２２０）面
の両方に配向して混在し、かつＸ線回折におけるピーク
強度でその強度比が（２２０）面で２０〜９５％であ
り、（１１１）面が５〜８０％であることを特徴とする
ものであり、とりわけ前記強度比が（２２０）面で５０
〜７０％、（１１１）面で３０〜５０％であることが望
ましい。In the composite member of the present invention, the crystal plane of the silicon carbide film chemically vapor-deposited on the surface of the ceramic base material has both (111) plane and (220) plane represented by Miller indices. It is characterized in that the orientations are mixed and the peak intensity in X-ray diffraction is 20 to 95% in the (220) plane and 5 to 80% in the (111) plane. Especially, the intensity ratio is 50 on the (220) plane.
˜70%, 30 to 50% in the (111) plane is desirable.
【００１２】[0012]
【作用】本発明の複合部材は、セラミック母材の表面に
残留応力が低い（１１１）面に配向した結晶面と、非球
面研磨等をはじめ曲面を有する形状の研磨においても超
平滑面が得やすい（２２０）面に配向した結晶面の両方
を混在させ、かつＸ線回折におけるピーク強度でその強
度比が（２２０）面で２０〜９５％、（１１１）面で５
〜８０％の範囲としたことから、該蒸着膜にクラックの
発生がなく、曲面を有する形状の研磨を容易にする。The composite member of the present invention has an ultra-smooth surface even when polishing a surface having a curved surface such as an aspherical surface and a crystal surface having a (111) plane with a low residual stress on the surface of the ceramic base material. It is easy to mix both crystal planes oriented in the (220) plane, and the peak intensity in X-ray diffraction has an intensity ratio of 20 to 95% in the (220) plane and 5 in the (111) plane.
Since the range is set to -80%, no cracks are generated in the deposited film, and polishing of a shape having a curved surface is facilitated.
【００１３】[0013]
【実施例】以下、本発明の複合部材を実施例に基づき詳
細に説明する。EXAMPLES The composite member of the present invention will be described in detail below based on examples.
【００１４】先ず、炭化珪素（ＳｉＣ）を主成分とし、
焼結助剤としてホウ素（Ｂ）、炭素（Ｃ）を含有する炭
化珪素質焼結体、窒化アルミニウム（ＡｌＮ）を主成分
とし、周期律表第３ａ族元素の酸化物等の焼結助剤を含
有する窒化アルミニウム質焼結体及び黒鉛（Ｃ）から成
る３種類の円柱体の平面を、ＲＭＳで０．５μｍ程度の
表面粗さにまで平面研磨した後、アセトン等の溶剤中で
超音波洗浄して蒸着用母材試料とした。First, silicon carbide (SiC) as a main component,
As a sintering aid, a silicon carbide based sintered material containing boron (B) and carbon (C), aluminum nitride (AlN) as a main component, and a sintering aid such as an oxide of a Group 3a element of the periodic table. After planarizing the flat surfaces of three types of cylindrical bodies made of an aluminum nitride sintered body containing graphite and graphite (C) by RMS to a surface roughness of about 0.5 μm, ultrasonic waves are applied in a solvent such as acetone. The sample was washed and used as a base material sample for vapor deposition.
【００１５】次に前記蒸着用母材試料を用い、反応ガス
としてメチルトリクロロシラン（ＣＨ3 ＳｉＣｌ4 ）と
水素（Ｈ2 ）を使用し、５０Ｔｏｒｒの減圧下のＣＶＤ
反応炉中、１４００℃の温度で２００〜３００μｍの膜
厚を目標に、炭化珪素を蒸着した。尚、前記炭化珪素の
成膜速度は毎時１０μｍ以上と早い方が望ましい。Next, using the above-mentioned base material sample for vapor deposition, methyltrichlorosilane (CH 3 SiCl 4 ) and hydrogen (H 2 ) were used as reaction gases, and CVD was performed under a reduced pressure of 50 Torr.
Silicon carbide was vapor-deposited in a reaction furnace at a temperature of 1400 ° C. with a target film thickness of 200 to 300 μm. It is desirable that the film forming rate of the silicon carbide be as high as 10 μm or more per hour.
【００１６】かくして得られた研磨仕上げ前の評価用試
料をＸ線回折装置により前記炭化珪素膜の結晶配向面を
同定し、その結晶配向面のピーク強度の総和を１００と
して各結晶配向面の強度比を算出した。The crystallographically oriented surface of the silicon carbide film was identified by an X-ray diffractometer in the thus obtained sample for evaluation before polishing and the sum of the peak intensities of the crystallographically oriented surfaces was set to 100, and the strength of each crystallographically oriented surface was determined. The ratio was calculated.
【００１７】また、前記炭化珪素膜を被着形成した試料
は、先ずダイヤモンド砥石を使用して該炭化珪素膜をそ
の表面から約３０〜５０μｍ程度の深さまで平面研削盤
により粗研磨した後、微粒のダイヤモンド砥粒を用いて
更に膜厚で約１０μｍ程度、平面ラップ盤で超平滑面と
なるまで研磨仕上げするとともに、一方で平面研磨仕上
げした試料を再度、非球面ラップ盤で曲面形状に超平滑
面となるまで研磨仕上げしてそれぞれ評価用試料とし
た。Further, the sample on which the silicon carbide film is formed is first rough-polished with a surface grinder to a depth of about 30 to 50 μm from the surface of the silicon carbide film using a diamond grindstone, and then finely ground. Using the diamond abrasives of No. 1, further polish the film thickness to about 10 μm with a flat lapping machine until it becomes a super smooth surface, while the surface polished sample is again smoothed into a curved surface shape with an aspherical lapping machine. Each sample was polished and polished until it became a surface.
【００１８】次いで前記研磨仕上げした評価用試料を、
光の干渉を利用した非接触の表面粗さ計を使用して該評
価用試料の研磨仕上げ面を計測し、最大高さＲｍａ
ｘ．、平均粗さＲａ及び粗さ曲線の中心線からの凹凸の
標準偏差ＲＭＳを求めた。Next, the polished sample for evaluation was
The non-contact surface roughness meter utilizing the interference of light was used to measure the polished finished surface of the evaluation sample to obtain the maximum height Rma.
x. , The average roughness Ra and the standard deviation RMS of the unevenness from the center line of the roughness curve were obtained.
【００１９】以上の結果を表１に示す。The above results are shown in Table 1.
【００２０】[0020]
【表１】 [Table 1]
【００２１】表１の結果より明らかなように、炭化珪素
膜の結晶配向面が（１１１）面だけである試料番号１
２、２０、２７では非球面研磨面の表面粗さがＲｍａ
ｘ．で３１．４ｎｍ以上と極めて悪く、それに比べて
（２２０）面だけの試料番号１１、１９、２６では平面
研磨面も非球面研磨面もその表面粗さは非常に良好であ
るが、蒸着した炭化珪素膜にクラックが発生している。As is clear from the results of Table 1, Sample No. 1 in which the crystal orientation plane of the silicon carbide film is only the (111) plane
In Nos. 2, 20, and 27, the surface roughness of the aspherical polished surface was Rma.
x. Is extremely poor at 31.4 nm or more. On the other hand, in sample numbers 11, 19, and 26 having only the (220) plane, the surface roughness of both the flat polished surface and the aspherical polished surface is very good, but vapor deposition carbonization A crack has occurred in the silicon film.
【００２２】また、（１１１）面と（２２０）面が混在
していても、本発明の範囲外の強度比である試料番号
１、１３、２１では、非球面研磨面の表面粗さがＲｍａ
ｘ．で２２．０ｎｍ以上と悪く、試料番号１０、１８、
２５では炭化珪素膜にクラックが認められる。Even if the (111) surface and the (220) surface are mixed, the surface roughness of the aspherical polished surface is Rma in the sample Nos. 1, 13, and 21, which have strength ratios outside the range of the present invention.
x. Is 22.0 nm or more, which is bad.
In No. 25, cracks are recognized in the silicon carbide film.
【００２３】それに対して、本発明の複合部材では非球
面研磨面の表面粗さがＲｍａｘ．で１９．３ｎｍ以下、
ＲＭＳで２．９５ｎｍ以下と優れており、蒸着した炭化
珪素膜にも全くクラックが認められなかった。On the other hand, in the composite member of the present invention, the surface roughness of the aspherical polished surface is Rmax. At 19.3 nm or less,
The RMS was excellent at 2.95 nm or less, and no crack was observed in the vapor-deposited silicon carbide film.
【００２４】[0024]
【発明の効果】叙上の如く、本発明の複合部材は、セラ
ミック母材の表面に化学蒸着した炭化珪素膜の結晶面
が、ミラー指数で表示した（１１１）面と（２２０）面
の両方に配向して混在し、かつＸ線回折におけるピーク
強度でその強度比が（２２０）面で２０〜９５％であ
り、（１１１）面が５〜８０％であることから、蒸着膜
にクラックがなく、平面は勿論、曲面を有する形状であ
っても容易に超平滑面を有し、表面硬度が高い耐久性に
優れた複合部材を得ることができる。As described above, in the composite member of the present invention, the crystal planes of the silicon carbide film chemically vapor-deposited on the surface of the ceramic base material are both the (111) plane and the (220) plane represented by Miller indices. Are mixed with each other, and the peak intensity in X-ray diffraction has an intensity ratio of 20 to 95% in the (220) plane and 5 to 80% in the (111) plane. In addition, it is possible to easily obtain a composite member having a super smooth surface having a curved surface as well as a flat surface and having a high surface hardness and excellent durability.
Claims (1)
着して成る複合部材において、前記化学蒸着した炭化珪
素の結晶面がミラー指数表示の（２２０）面と（１１
１）面の両面に配向し、かつＸ線回折強度比がそのピー
ク強度で（２２０）面が２０〜９５％、（１１１）面が
５〜８０％であることを特徴とする複合部材。1. In a composite member formed by chemically vapor-depositing silicon carbide on the surface of a ceramic base material, the crystal planes of the chemically vapor-deposited silicon carbide are (220) planes and (11) planes represented by Miller indices.
1) A composite member which is oriented on both sides and has an X-ray diffraction intensity ratio of 20 to 95% for the (220) plane and 5 to 80% for the (111) plane in terms of its peak intensity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4347503A JP2738629B2 (en) | 1992-12-28 | 1992-12-28 | Composite members |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4347503A JP2738629B2 (en) | 1992-12-28 | 1992-12-28 | Composite members |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06191972A true JPH06191972A (en) | 1994-07-12 |
| JP2738629B2 JP2738629B2 (en) | 1998-04-08 |
Family
ID=18390671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4347503A Expired - Fee Related JP2738629B2 (en) | 1992-12-28 | 1992-12-28 | Composite members |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2738629B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999001405A1 (en) * | 1997-07-02 | 1999-01-14 | Nippon Pillar Packing Co., Ltd. | SiC COMPOSITE AND METHOD OF PRODUCTION THEREOF |
| JP2001203188A (en) * | 2000-01-19 | 2001-07-27 | Ibiden Co Ltd | Component for semiconductor manufacturing machine and the machine |
| JP2001203190A (en) * | 2000-01-20 | 2001-07-27 | Ibiden Co Ltd | Component for semiconductor manufacturing machine and the machine |
| JP2005173072A (en) * | 2003-12-10 | 2005-06-30 | Nippon Zeon Co Ltd | Optical film and method for manufacturing the same |
| US6936102B1 (en) * | 1999-08-02 | 2005-08-30 | Tokyo Electron Limited | SiC material, semiconductor processing equipment and method of preparing SiC material therefor |
-
1992
- 1992-12-28 JP JP4347503A patent/JP2738629B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999001405A1 (en) * | 1997-07-02 | 1999-01-14 | Nippon Pillar Packing Co., Ltd. | SiC COMPOSITE AND METHOD OF PRODUCTION THEREOF |
| US6936102B1 (en) * | 1999-08-02 | 2005-08-30 | Tokyo Electron Limited | SiC material, semiconductor processing equipment and method of preparing SiC material therefor |
| US7410923B2 (en) | 1999-08-02 | 2008-08-12 | Tokyo Electron Limited | SiC material, semiconductor device fabricating system and SiC material forming method |
| JP2001203188A (en) * | 2000-01-19 | 2001-07-27 | Ibiden Co Ltd | Component for semiconductor manufacturing machine and the machine |
| JP2001203190A (en) * | 2000-01-20 | 2001-07-27 | Ibiden Co Ltd | Component for semiconductor manufacturing machine and the machine |
| JP2005173072A (en) * | 2003-12-10 | 2005-06-30 | Nippon Zeon Co Ltd | Optical film and method for manufacturing the same |
| JP4492116B2 (en) * | 2003-12-10 | 2010-06-30 | 日本ゼオン株式会社 | Method for producing optical film |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2738629B2 (en) | 1998-04-08 |
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